IT1074452B - Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide - Google Patents
Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxideInfo
- Publication number
- IT1074452B IT1074452B IT4833676A IT4833676A IT1074452B IT 1074452 B IT1074452 B IT 1074452B IT 4833676 A IT4833676 A IT 4833676A IT 4833676 A IT4833676 A IT 4833676A IT 1074452 B IT1074452 B IT 1074452B
- Authority
- IT
- Italy
- Prior art keywords
- chips
- h2so4
- degrees
- hydrogen peroxide
- heated
- Prior art date
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Impurities are removed from oxidised or non-oxidised silicon wafers or chips, by using conc. H2SO4 heated to >=110 degrees C and hydrogen peroxide, (30 wt. %) added until the bath is clear, colourless, and excess H2O2 is present; the Si chips are then immersed for 3-20 minutes and further H2O2 added to maintain the excess, and the chips then removed. The mixt. of H2SO4 and H2SO2 is pref. heated to 120-155 degrees C or, alternatively, the H2SO4 is heated to 130-140 degrees C and 1-3 ml H2O2 added per minute with heating to 150 degrees C before the chips are removed from the bath. Cleaning silicon used for diodes, transistors and other circuit elements, where the cleanliness of the surface of the Si is extremely critical. The bath lasts for ca. 7 days and a given amt. of H2SO4 will clean up to 50 times as many chips as compared with conventional processes. Carbon and inorganic impurities are removed, esp. the ions of alkali- and alkaline earth-metals. Savings are achieved in the amt. of reagents used, and also pollution problems are reduced.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56310475A | 1975-03-28 | 1975-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1074452B true IT1074452B (en) | 1985-04-20 |
Family
ID=24249133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT4833676A IT1074452B (en) | 1975-03-28 | 1976-03-01 | Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS51121254A (en) |
| BE (1) | BE840112A (en) |
| IT (1) | IT1074452B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS546466A (en) * | 1977-06-17 | 1979-01-18 | Hitachi Ltd | Surface cleaning method |
| JPS58146696U (en) * | 1982-03-25 | 1983-10-03 | アロン化成株式会社 | Continuous cutting tool |
| US5000795A (en) * | 1989-06-16 | 1991-03-19 | At&T Bell Laboratories | Semiconductor wafer cleaning method and apparatus |
| JPH0521411A (en) * | 1991-07-12 | 1993-01-29 | Fujitsu Ltd | Surface processing method and surface processor |
| AU3578597A (en) * | 1996-06-25 | 1998-01-14 | Cfm Technologies, Inc. | Improved method for sulfuric acid resist stripping |
| JP4573282B2 (en) * | 2000-07-03 | 2010-11-04 | 株式会社Ｓｕｍｃｏ | Epitaxial silicon wafer manufacturing method |
| JP7201422B2 (en) | 2018-12-21 | 2023-01-10 | サカタインクス株式会社 | Active energy ray-curable flexographic printing ink composition |
-
1976
- 1976-03-01 IT IT4833676A patent/IT1074452B/en active
- 1976-03-26 BE BE165631A patent/BE840112A/en unknown
- 1976-03-26 JP JP3413076A patent/JPS51121254A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5335436B2 (en) | 1978-09-27 |
| JPS51121254A (en) | 1976-10-23 |
| BE840112A (en) | 1976-07-16 |
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