IT1074452B - Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide - Google Patents

Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide

Info

Publication number
IT1074452B
IT1074452B IT4833676A IT4833676A IT1074452B IT 1074452 B IT1074452 B IT 1074452B IT 4833676 A IT4833676 A IT 4833676A IT 4833676 A IT4833676 A IT 4833676A IT 1074452 B IT1074452 B IT 1074452B
Authority
IT
Italy
Prior art keywords
chips
h2so4
degrees
hydrogen peroxide
heated
Prior art date
Application number
IT4833676A
Other languages
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1074452B publication Critical patent/IT1074452B/en

Links

Abstract

Impurities are removed from oxidised or non-oxidised silicon wafers or chips, by using conc. H2SO4 heated to >=110 degrees C and hydrogen peroxide, (30 wt. %) added until the bath is clear, colourless, and excess H2O2 is present; the Si chips are then immersed for 3-20 minutes and further H2O2 added to maintain the excess, and the chips then removed. The mixt. of H2SO4 and H2SO2 is pref. heated to 120-155 degrees C or, alternatively, the H2SO4 is heated to 130-140 degrees C and 1-3 ml H2O2 added per minute with heating to 150 degrees C before the chips are removed from the bath. Cleaning silicon used for diodes, transistors and other circuit elements, where the cleanliness of the surface of the Si is extremely critical. The bath lasts for ca. 7 days and a given amt. of H2SO4 will clean up to 50 times as many chips as compared with conventional processes. Carbon and inorganic impurities are removed, esp. the ions of alkali- and alkaline earth-metals. Savings are achieved in the amt. of reagents used, and also pollution problems are reduced.
IT4833676A 1975-03-28 1976-03-01 Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide IT1074452B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56310475A 1975-03-28 1975-03-28

Publications (1)

Publication Number Publication Date
IT1074452B true IT1074452B (en) 1985-04-20

Family

ID=24249133

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4833676A IT1074452B (en) 1975-03-28 1976-03-01 Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide

Country Status (3)

Country Link
JP (1) JPS51121254A (en)
BE (1) BE840112A (en)
IT (1) IT1074452B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546466A (en) * 1977-06-17 1979-01-18 Hitachi Ltd Surface cleaning method
JPS58146696U (en) * 1982-03-25 1983-10-03 アロン化成株式会社 Continuous cutting tool
US5000795A (en) * 1989-06-16 1991-03-19 At&T Bell Laboratories Semiconductor wafer cleaning method and apparatus
JPH0521411A (en) * 1991-07-12 1993-01-29 Fujitsu Ltd Surface processing method and surface processor
US6032682A (en) * 1996-06-25 2000-03-07 Cfmt, Inc Method for sulfuric acid resist stripping
JP4573282B2 (en) * 2000-07-03 2010-11-04 株式会社Ｓｕｍｃｏ Epitaxial silicon wafer manufacturing method
JP7201422B2 (en) 2018-12-21 2023-01-10 サカタインクス株式会社 Active energy ray-curable flexographic printing ink composition

Also Published As

Publication number Publication date
JPS5335436B2 (en) 1978-09-27
JPS51121254A (en) 1976-10-23
BE840112A (en) 1976-07-16

Similar Documents

Publication Publication Date Title
GB809644A (en) Improvements in or relating to the manufacture of semi-conductor bodies
EP0276774A3 (en) Composition for use in the processing of semiconductor materials and method for its preparation and use
IT1074452B (en) Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide
DK568689A (en) PROCEDURE FOR DECOLUTION OF SULFURIC ACID
GB1014287A (en) The production of an oxide coating on a substantially monocrystalline semi-conductorbody
JPS5736842A (en) Semiconductor integrated circuit device
GB969969A (en) Improvements in and relating to the manufacture of semiconductor devices
US2890159A (en) Method of etching a surface of semiconductor device
US3669775A (en) Removal of boron and phosphorous-containing glasses from silicon surfaces
JPS5737830A (en) Manufacture of semiconductor device
GB1264879A (en)
JPS5512726A (en) Process for manufacturing semiconductor substrate
JPS54106180A (en) Manufacture of semiconductor integrated circuit
GB1060633A (en) Improvements in and relating to methods of diffusion
JPS56105652A (en) Manufacture of semiconductor device
JPS51114875A (en) Semiconductor device manufacturing method
JPS5754333A (en) Semiconductor device and preparation thereof
KR970003582A (en) Semiconductor Wafer Cleaning Method
JPS6474719A (en) Manufacture of semiconductor device
JPS644025A (en) Manufacture of semiconductor device
JPS6477130A (en) Cleaning of semiconductor
JPS57110672A (en) Etching method for germaninum
JPS5693315A (en) Manufacture of semiconductor device
JPS6443384A (en) Steam washing method and washer
JPS5679436A (en) Manufacture of semiconductor device