JPS54102966A - Impurity diffusion method - Google Patents
Impurity diffusion methodInfo
- Publication number
- JPS54102966A JPS54102966A JP1003178A JP1003178A JPS54102966A JP S54102966 A JPS54102966 A JP S54102966A JP 1003178 A JP1003178 A JP 1003178A JP 1003178 A JP1003178 A JP 1003178A JP S54102966 A JPS54102966 A JP S54102966A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- boron
- film
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To eliminate the dispersion of the impurity density and thus to form a region of a uniform impurity density by giving the stabilizing process to remove the impurities other than those diffused with the semiconductor substrate after diffusion of the impurity.
CONSTITUTION: Oxide film 11 is formed on silicon substrate 10, and window 12 is formed to film 11. Then boron silicate layer 13 is formed on the surface of substrate 10 exposed through window 12. In this case, high-density boron diffusion layer 14 is formed on substrate 10. The stabilizing treatment is given by soaking the substrate into the heated nitic/sulfuric acid, thus removing layer 13 on the surface and then exposing layer 14. After this, a heat treatment is given in the oxidizing atmosphere to form oxide film 15 on the layer 14. At the same time, the boron of layer 14 is diffused partially into film 15 to lower the impurity density. Then film 15 is removed to expose layer 14, and finally a heat treatment is applied in the steam atmosphere. Thus, the boron is diffused into substrate 10 to form P-type base region 16, at the same time forming oxide film 17 on the surface of region 16.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1003178A JPS54102966A (en) | 1978-01-31 | 1978-01-31 | Impurity diffusion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1003178A JPS54102966A (en) | 1978-01-31 | 1978-01-31 | Impurity diffusion method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54102966A true JPS54102966A (en) | 1979-08-13 |
Family
ID=11739016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1003178A Pending JPS54102966A (en) | 1978-01-31 | 1978-01-31 | Impurity diffusion method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54102966A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4873088A (en) * | 1971-12-29 | 1973-10-02 | ||
| JPS497625A (en) * | 1972-05-26 | 1974-01-23 |
-
1978
- 1978-01-31 JP JP1003178A patent/JPS54102966A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4873088A (en) * | 1971-12-29 | 1973-10-02 | ||
| JPS497625A (en) * | 1972-05-26 | 1974-01-23 |
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