JPS54140464A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54140464A
JPS54140464A JP4776478A JP4776478A JPS54140464A JP S54140464 A JPS54140464 A JP S54140464A JP 4776478 A JP4776478 A JP 4776478A JP 4776478 A JP4776478 A JP 4776478A JP S54140464 A JPS54140464 A JP S54140464A
Authority
JP
Japan
Prior art keywords
film
boron
silicon
micropattern
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4776478A
Other languages
Japanese (ja)
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4776478A priority Critical patent/JPS54140464A/en
Priority to US06/030,812 priority patent/US4239559A/en
Priority to DE19792916098 priority patent/DE2916098A1/en
Publication of JPS54140464A publication Critical patent/JPS54140464A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To secure the facilitated formation of the micropattern as well as to ensure the high-precision working for the minute measurements by improving the diffusing process of the impurity to the selective region of the semiconductor device.
CONSTITUTION: Silicon oxide film 2 is formed on the surface of silicon wafer 1, and silicon glass BSG film 3 containing the boron is formed on the surface of film 2 to be turned to BSG film 3 featuring a fixed pattern through the photo resist technique. Then poly-crystal silicon film 4 of a fixed thickness is formed, and furthermore the heat treatment is given to form poly-crystal film 4a containing the boron from film 3. Film 4 containing no boron is removed with use of the etching solution containing pyrocatechol and ethylenediamine to make the part of film 4a remain. Then film 3 is used as the boron source of the impurity as well as the foundation of the fixed pattern of the insulator in case film 4a is diffused selectively. Thus, the formation of a micropattern can be facilitated.
COPYRIGHT: (C)1979,JPO&Japio
JP4776478A 1978-04-21 1978-04-24 Manufacture of semiconductor device Pending JPS54140464A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4776478A JPS54140464A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device
US06/030,812 US4239559A (en) 1978-04-21 1979-04-17 Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
DE19792916098 DE2916098A1 (en) 1978-04-21 1979-04-20 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4776478A JPS54140464A (en) 1978-04-24 1978-04-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140464A true JPS54140464A (en) 1979-10-31

Family

ID=12784429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4776478A Pending JPS54140464A (en) 1978-04-21 1978-04-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879252A (en) * 1987-01-27 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879252A (en) * 1987-01-27 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device and a method of manufacturing the same

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