JPS5789258A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5789258A JPS5789258A JP16618480A JP16618480A JPS5789258A JP S5789258 A JPS5789258 A JP S5789258A JP 16618480 A JP16618480 A JP 16618480A JP 16618480 A JP16618480 A JP 16618480A JP S5789258 A JPS5789258 A JP S5789258A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- high pressure
- gate
- pressure dry
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 4
- 229910052796 boron Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000007254 oxidation reaction Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent diffusion of impurity from a gate by performing in low temperatures, using high pressure dry oxidization, the formation of a thin oxide film after forming the source and drain by boron diffusion in the manufacturing process of a silicon gate IC. CONSTITUTION:A source and drain regions are formed by boron diffusion after forming a multi-crystal silicon gate 3 through a gate oxide film 2. The surface is etched with HF solution in order to remove boron glass deposit on the silicon surface when diffusing boron. A thin oxide film 5 is formed by a high pressure dry oxidization. The use of the high pressure dry oxidization prevents diffusion of the impurity to a channel region via the gate oxide film 2 as it is carried out in short time. The time required in the high pressure dry oxidization is, for instance in case of an oxide film of 800Angstrom , ten minutes at 1,000 deg.C and 8.0kg/cm<3>.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618480A JPS5789258A (en) | 1980-11-26 | 1980-11-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16618480A JPS5789258A (en) | 1980-11-26 | 1980-11-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789258A true JPS5789258A (en) | 1982-06-03 |
Family
ID=15826625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16618480A Pending JPS5789258A (en) | 1980-11-26 | 1980-11-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789258A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151572A (en) * | 1977-01-24 | 1977-12-16 | Hitachi Ltd | Insulated gate semiconductor device and its production |
| JPS5464472A (en) * | 1977-10-31 | 1979-05-24 | Fujitsu Ltd | High pressure oxidizing method of silicon |
-
1980
- 1980-11-26 JP JP16618480A patent/JPS5789258A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52151572A (en) * | 1977-01-24 | 1977-12-16 | Hitachi Ltd | Insulated gate semiconductor device and its production |
| JPS5464472A (en) * | 1977-10-31 | 1979-05-24 | Fujitsu Ltd | High pressure oxidizing method of silicon |
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