JPS56131932A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56131932A
JPS56131932A JP3493180A JP3493180A JPS56131932A JP S56131932 A JPS56131932 A JP S56131932A JP 3493180 A JP3493180 A JP 3493180A JP 3493180 A JP3493180 A JP 3493180A JP S56131932 A JPS56131932 A JP S56131932A
Authority
JP
Japan
Prior art keywords
wafer
film
etching
out light
oxydation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3493180A
Other languages
Japanese (ja)
Other versions
JPS6346975B2 (en
Inventor
Minoru Yokozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP3493180A priority Critical patent/JPS56131932A/en
Publication of JPS56131932A publication Critical patent/JPS56131932A/en
Publication of JPS6346975B2 publication Critical patent/JPS6346975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent the crystal defect caused by following heat treatment, by shutting out light from the process of etching the oxydation film and exposing the Si substrate. CONSTITUTION:A substrate wafer (a) is put inside an opaque receptacle (c), and shutting out light, etching liquid is used to remove the antioxidative film and boron glass film formed on the surface of the wafer. After this, the wafer (a) is thermo- oxidized. Thus, almost no crystal defect is noticeable when wafer (a) is etched. And apart from the process removing oxydation film after impurity diffusion, this manufacturing process can be applied to any etching process using fluoroxide etching liquid, such as removing oxidation film in a photoetching process.
JP3493180A 1980-03-19 1980-03-19 Manufacture of semiconductor device Granted JPS56131932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3493180A JPS56131932A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3493180A JPS56131932A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131932A true JPS56131932A (en) 1981-10-15
JPS6346975B2 JPS6346975B2 (en) 1988-09-20

Family

ID=12427933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3493180A Granted JPS56131932A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131932A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142094A (en) * 2014-01-30 2015-08-03 三菱電機株式会社 Semiconductor wafer cassette and manufacturing method of semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142094A (en) * 2014-01-30 2015-08-03 三菱電機株式会社 Semiconductor wafer cassette and manufacturing method of semiconductor element

Also Published As

Publication number Publication date
JPS6346975B2 (en) 1988-09-20

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