JPS57110672A - Etching method for germaninum - Google Patents

Etching method for germaninum

Info

Publication number
JPS57110672A
JPS57110672A JP18727080A JP18727080A JPS57110672A JP S57110672 A JPS57110672 A JP S57110672A JP 18727080 A JP18727080 A JP 18727080A JP 18727080 A JP18727080 A JP 18727080A JP S57110672 A JPS57110672 A JP S57110672A
Authority
JP
Japan
Prior art keywords
soln
etching
wafer
h3po4
diluted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18727080A
Other languages
Japanese (ja)
Other versions
JPS5817264B2 (en
Inventor
Shuzo Kagawa
Katsuji Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18727080A priority Critical patent/JPS5817264B2/en
Publication of JPS57110672A publication Critical patent/JPS57110672A/en
Publication of JPS5817264B2 publication Critical patent/JPS5817264B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To enhance the work efficiency and to obtain a satisfactory etching state by using an etching soln. consisting of H3PO4 and H2O2. CONSTITUTION:An etching soln. is prepared by mixing H3PO4 with H2O2 having 31% concn. in H3PO4:H2O2=1,3. A germanium wafer to be etched to a mirror surface is immersed in the etching soln. The wafer is put in a holder made of quartz beforehand. In case of selective etching, makes of an oxide film, a resist or the like is formed. After finishing the etching, the soln. is diluted with a large quantity of water, and the wafer is dipped in an aqueous soln. of hydrogen peroxide for several sec. The soln. is diluted with a large quantity of water, and the wafer is washed.
JP18727080A 1980-12-29 1980-12-29 Germanium etching method Expired JPS5817264B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18727080A JPS5817264B2 (en) 1980-12-29 1980-12-29 Germanium etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18727080A JPS5817264B2 (en) 1980-12-29 1980-12-29 Germanium etching method

Publications (2)

Publication Number Publication Date
JPS57110672A true JPS57110672A (en) 1982-07-09
JPS5817264B2 JPS5817264B2 (en) 1983-04-06

Family

ID=16203044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18727080A Expired JPS5817264B2 (en) 1980-12-29 1980-12-29 Germanium etching method

Country Status (1)

Country Link
JP (1) JPS5817264B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669187A (en) * 1992-06-04 1994-03-11 Micron Technol Inc Treatment method of semiconductor
CN105937052A (en) * 2016-06-20 2016-09-14 云南中科鑫圆晶体材料有限公司 Method for removing blue drug mark on surface of monocrystalline germanium slice after acidic chemical corrosion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669187A (en) * 1992-06-04 1994-03-11 Micron Technol Inc Treatment method of semiconductor
CN105937052A (en) * 2016-06-20 2016-09-14 云南中科鑫圆晶体材料有限公司 Method for removing blue drug mark on surface of monocrystalline germanium slice after acidic chemical corrosion

Also Published As

Publication number Publication date
JPS5817264B2 (en) 1983-04-06

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