JPS57187940A - Surface treatment of compound semiconductor - Google Patents

Surface treatment of compound semiconductor

Info

Publication number
JPS57187940A
JPS57187940A JP7225881A JP7225881A JPS57187940A JP S57187940 A JPS57187940 A JP S57187940A JP 7225881 A JP7225881 A JP 7225881A JP 7225881 A JP7225881 A JP 7225881A JP S57187940 A JPS57187940 A JP S57187940A
Authority
JP
Japan
Prior art keywords
compound semiconductor
hydrogen peroxide
peroxide solution
lactic acid
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7225881A
Other languages
Japanese (ja)
Inventor
Shinsuke Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7225881A priority Critical patent/JPS57187940A/en
Publication of JPS57187940A publication Critical patent/JPS57187940A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To improve finishing accuracy of a compound semiconductor surface, slow down etching speed and facilitate control of etching thickness, by treating a compound semiconductor surface in the etchant of lactic acid, fluoric acid and hydrogen peroxide solution. CONSTITUTION:A compound semiconductor surface is treated in the etchant of lactic acid, fluoric acid and hydrogen peroxide solution. The etchant in use is included within a region encircled by three points of (20:1:1), (10:10:1) and (10: 1:10) for 85%-92% lactic acid :49% fluoric acid :30% hydrogen peroxide solution respectively in a triangular state chart showing a mixture ratio of lactic acid (85%-92%), fluoric acid (49% solution) and hydrogen peroxide solution (30% solution).
JP7225881A 1981-05-15 1981-05-15 Surface treatment of compound semiconductor Pending JPS57187940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7225881A JPS57187940A (en) 1981-05-15 1981-05-15 Surface treatment of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7225881A JPS57187940A (en) 1981-05-15 1981-05-15 Surface treatment of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS57187940A true JPS57187940A (en) 1982-11-18

Family

ID=13484081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7225881A Pending JPS57187940A (en) 1981-05-15 1981-05-15 Surface treatment of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57187940A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772907A (en) * 1996-05-08 1998-06-30 The United States Of America As Represented By The Secretary Of The Navy Lactic acid treatment of InP materials
EP0979529A1 (en) * 1997-04-29 2000-02-16 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5772907A (en) * 1996-05-08 1998-06-30 The United States Of America As Represented By The Secretary Of The Navy Lactic acid treatment of InP materials
EP0979529A1 (en) * 1997-04-29 2000-02-16 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER
EP0979529A4 (en) * 1997-04-29 2000-09-20 Us Navy DESIGN AND FABRICATION OF ELECTRONIC DEVICES WITH InA1AsSb/A1Sb BARRIER

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