JPS5658238A - Etching liquid - Google Patents

Etching liquid

Info

Publication number
JPS5658238A
JPS5658238A JP13448879A JP13448879A JPS5658238A JP S5658238 A JPS5658238 A JP S5658238A JP 13448879 A JP13448879 A JP 13448879A JP 13448879 A JP13448879 A JP 13448879A JP S5658238 A JPS5658238 A JP S5658238A
Authority
JP
Japan
Prior art keywords
etching
etching liquid
crystal
solution
under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13448879A
Other languages
Japanese (ja)
Other versions
JPH044750B2 (en
Inventor
Junichi Nishizawa
Yutaka Koyama
Hiroshi Tadano
Kazuyuki Inoguchi
Yasuo Okuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP13448879A priority Critical patent/JPS5658238A/en
Publication of JPS5658238A publication Critical patent/JPS5658238A/en
Publication of JPH044750B2 publication Critical patent/JPH044750B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To etch GaAs crystal only under light irradiation by a method wherein a solution with a constituents of HF 49%, H2O2 30% and a volumetric ratio of H2O is approximately 1:1:10. CONSTITUTION:Under a W lamp 1, the etching liquid, HF 49%, acqueus solution, H2O2 30% acques solution, a volumetric ratio of H2O is approximately 1:1:10 is entered in a breaker, the infrared filter by water 3 is held midst bt the glass jig 4 to prevent the rise of the liquid temperature. A GaAs crystal is put in a Pt basket 6 and dope it the etching liquid and the crystal 7 is illuminated while the etching liquid is stirred slowly. When a water amount is reduced the reaction property increases. The crystal is lifted after a prescribed time, and is washed with water 5. Since the etching liquid performs the etching only under the light illuminated, the etching speed is controled by the partial illumination or the pulse illumination. The clear pattern corresponding to the junction or shifting is formed in the etching of less than 1mum. Thus the inspection of crystallinity can be easily performed.
JP13448879A 1979-10-17 1979-10-17 Etching liquid Granted JPS5658238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13448879A JPS5658238A (en) 1979-10-17 1979-10-17 Etching liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13448879A JPS5658238A (en) 1979-10-17 1979-10-17 Etching liquid

Publications (2)

Publication Number Publication Date
JPS5658238A true JPS5658238A (en) 1981-05-21
JPH044750B2 JPH044750B2 (en) 1992-01-29

Family

ID=15129492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13448879A Granted JPS5658238A (en) 1979-10-17 1979-10-17 Etching liquid

Country Status (1)

Country Link
JP (1) JPS5658238A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318139A (en) * 2002-04-22 2003-11-07 Tokai Univ Method for polishing silicon wafer
JP2006341003A (en) * 2005-06-10 2006-12-21 Cleanup Corp Tray integrated type drawer storage part
CN104213156A (en) * 2014-08-15 2014-12-17 安徽广德威正光电科技有限公司 BT plate electroplating process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233847A (en) * 1975-09-10 1977-03-15 Matsushita Electric Ind Co Ltd Method of etching gallium phosphate and etching liquid therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233847A (en) * 1975-09-10 1977-03-15 Matsushita Electric Ind Co Ltd Method of etching gallium phosphate and etching liquid therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318139A (en) * 2002-04-22 2003-11-07 Tokai Univ Method for polishing silicon wafer
JP2006341003A (en) * 2005-06-10 2006-12-21 Cleanup Corp Tray integrated type drawer storage part
CN104213156A (en) * 2014-08-15 2014-12-17 安徽广德威正光电科技有限公司 BT plate electroplating process

Also Published As

Publication number Publication date
JPH044750B2 (en) 1992-01-29

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