CN1084055C - Efficient LED and its making method - Google Patents
Efficient LED and its making method Download PDFInfo
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- CN1084055C CN1084055C CN98100008A CN98100008A CN1084055C CN 1084055 C CN1084055 C CN 1084055C CN 98100008 A CN98100008 A CN 98100008A CN 98100008 A CN98100008 A CN 98100008A CN 1084055 C CN1084055 C CN 1084055C
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- gallium arsenide
- aluminum gallium
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Abstract
The present invention relates to a semiconductor and a device method thereof in a basic electric element, which is mainly a high-efficient light emitting diode manufactured by a metal vapor deposition through reducing the absorption of light of a light emitting lateral electrode of a light emitting diode. The present invention comprises a substrate, a lower limiting layer, an activation type zone, an upper limiting layer, an expanding layer and an ohmic contacting layer, wherein a double heterojunction or multi-quantum well light emitting zone is composed of aluminium phosphide gallium indium (AlGaInP) mixed crystal layers 12, 13 and 14, and each crystallizing layer is consecutively formed by organic metal vapor deposition. The present invention has the advantages of simple structure, reliable manufacturing technology and low cost, and thus, the present invention has practicability.
Description
The invention belongs to a kind of semiconductor device and manufacture method thereof in the essential electronic element, especially relate to a kind of technology of making high efficiency high-brightness semiconductor light-emitting diode.
In recent years, expansion along with the light-emitting diode application, requirement to light-emitting diode is more and more higher, particularly to the brightness requirement of light-emitting diode from tens general milli candle lights to high brightness hundreds of milli candle light even to the several candle lights of super brightness, and the colored requirement that shows is proposed.The thing followed is the development of new material, new construction and new manufacturing technology.AlGaInP (AlGaInP) quaternary system compound mixed crystal can be realized from ruddiness to the green luminescence, and with organic metal vapour deposition (MOCVD) can realize based on double heterojunction or multi-quantum pit structure LED device " D.V Morgan etc.; ELECTRONICS LETTERS; Vol.29 No.22 (1993), p.1991; Hideto Sugawara etc., Jpn.J.Appl.Phys., Vol.33 (1994), pp.5784-5787 ".But resistivity is very high when making upper limiting layer owing to the AlGaInP material, the current concentration that the feasible utmost point from power on injects is under top electrode, the luminous zone also concentrates under the top electrode, and the wide part of being launched is reflected or absorbs by top electrode, has limited the luminous efficiency and the brightness of light-emitting diode.For efficient and the brightness that improves light-emitting diode, there are many different structure-improveds and technology to be studied release.The mode of improvement mainly concentrates on the better conductivity conductive layer and is connected on the upper limiting layer, strengthens the extending transversely of electric current, or utilizes the conductivity inversion layer to come the injection of electric current under the blocking electrode.United States Patent (USP) 5,008,718 propose aluminum gallium arsenide (AlGaAs) current extending of growth high aluminium component on upper limiting layer, thickness is more than 7 microns, but the relative GaAs of the aluminum gallium arsenide of high aluminium component (GaAs) has certain lattice mismatch, bring certain difficulty for the growth of thick-layer, and the aluminum gallium arsenide of high aluminium component is easy to oxidation its conductivity is reduced; It is that window layers is sintered on the AlGaInP upper limiting layer by transparent conducting thin film that Chinese patent CN1126376A proposes with gallium phosphide GaP material; United States Patent (USP) 5,153,889 propose under top electrode the semiconductor crystal layer that growth one deck and current extending have films of opposite conductivity in the current extending, utilize masked etching technique that the crystallizing layer of the films of opposite conductivity beyond the top electrode area of coverage is eroded, carry out the thicker current extending of growth for the second time again.These improving technologies have improved the efficient and the brightness of light-emitting diode greatly, but its manufacturing technology difficulty is bigger, and cost is higher.
The objective of the invention is to propose a kind of vapor deposition of metal method of utilizing, under top electrode, form the current blocking district of high resistivity with arsenic oxide arsenoxide crystalline aluminophosphate floor, reduce the absorption of exiting surface electrode pair emergent light, and in the aluminum gallium arsenide conductive layer, mix efficient LED and the manufacture method thereof that a spot of phosphorus is formed, it can improve the oxidation in perfection of lattice and the inhibition growth course, improve its conductivity, so improved luminous efficiency, this method has simple in structure, manufacturing technology is reliable, lower-cost advantage, thus the existing in prior technology problem solved.
Technical program of the present invention lies in:
A kind of efficient LED of the present invention, it includes substrate, lower limit layer, active area, upper limiting layer, expansion area and ohmic contact layer; It is characterized in that: wherein on gallium arsenide substrate, with the AlGaInP limiting layer of first conductivity type of chemical gas-phase deposition method elder generation growth thickness between the 1-2 micron with first conductivity type; The AlGaInP single or multiple lift quantum well structure active area of the involuntary doping of growth thickness between the 0.1-1 micron then; The AlGaInP upper limiting layer with second conductivity type of regrowth thickness between the 1-2 micron; Follow the current extending of growth thickness, and mix carbamate additives for low phosphorus greater than the aluminum gallium arsenide/aluminium arsenide with second conductivity type/aluminum gallium arsenide sandwich of 5 microns; Grow at last one and have the GaAs ohmic contact layer of second conduction type; After above-mentioned each layer growth is finished, utilize the masking chemical corrosion method aluminium arsenide crystallizing layer the current extending of sandwich to be come out from the ohmic contact layer upper surface of last growth, form the oxidation window, the ohmic contact layer upper and lower surface of utilizing vacuum evaporation technology in the end to grow at last forms the metal electrode of corresponding conduction type respectively.
Aluminium arsenide and aluminum gallium arsenide crystallizing layer are between the aluminum gallium arsenide crystallizing layer as current-diffusion layer, and its thickness is between the 0.01-0.2 micron.
Aluminium arsenide and aluminum gallium arsenide crystallizing layer can be mixed with a certain amount of phosphorus, and the gram molecule content of phosphorus is between 0.1%-2%.
Said aluminum gallium arsenide, its sandwich is mixed with certain phosphorus, and the gram molecule content of phosphorus is between 0.5%-2%.
Oxidation forms the steam that the crystallizing layer of said aluminium arsenide carries by nitrogen under 350 ℃ of-500 ℃ of temperature.
The oxidation window that said oxidation forms, it forms by the photoetching chemical corrosion, and the used corrosive liquid of this method can be a phosphoric acid: hydrogen peroxide: the mixture of water, its ratio are 1: 1: 5-1: between 1: 20.
Said oxidation window, it is circular or square, or other figure, and its diameter or the length of side are between the 5-15 micron, and the degree of depth reaches certain position on the luminous zone under aluminium arsenide crystallizing layer place or the aluminium arsenide crystallizing layer.
A kind of manufacture method by the said efficient LED of claim 1 of the present invention is characterized in that it has the following steps:
The AlGaInP limiting layer of first conductivity type of a layer thickness between the 1-2 micron of growing 1) is arranged on the gallium arsenide substrate of first conductivity type at it;
2) the AlGaInP individual layer of an involuntary doping of growth on limiting layer, or multi-layer quantum well structure active area;
3) regrowth one deck has the AlGaInP limiting layer of second conductivity type on active area;
4) one deck of then growing on the AlGaInP limiting layer has the current expansion district of the aluminum gallium arsenide aluminium arsenide/aluminum gallium arsenide sandwich of second conductivity type, and mixes a spot of phosphorus;
5) regrowth one deck has the GaAs ohmic contact layer of second conduction type on extension layer;
6) after the material growth is finished, utilize the masking chemical corrosion method aluminium arsenide crystallizing layer the current extending of sandwich to be come out, form the oxidation window from material surface;
7) steam that carries by nitrogen under 350 ℃ to 500 ℃ condition, carries out the current blocking district that oxidation forms local high resistivity to the aluminium arsenide crystallization;
8) the ohmic contact layer upper and lower surface of utilizing vacuum evaporation technology in the end to grow forms the metal electrode of corresponding conduction type respectively.
Because the present invention forms the current blocking district of high resistivity under top electrode, the luminous zone that has electric current to inject is limited in the zone beyond the top electrode coverage rate, has reduced the absorption of top electrode.Improved the luminous efficiency of light-emitting diode, particularly under the situation of little electric current, electric current also can expand to the zone beyond the top electrode, has improved the characteristics of luminescence under the little electric current greatly.Because aluminium arsenide and the oxidation rate difference of aluminum gallium arsenide in steam are very big, generally more than 100: 1, and to the not oxidation of GaAs ohmic contact layer, so this scheme is feasible.The present invention mixes a spot of phosphorus in the aluminum gallium arsenide current extending, phosphorus can reduce the aluminum gallium arsenide of high aluminium component and the lattice mismatch of GaAs in aluminum gallium arsenide, quality to the thicker aluminum gallium arsenide of growth has greatly improved, and the oxidation of mixing the aluminum gallium arsenide of high aluminium component of phosphorus has inhibitory action in growth course, has improved the conductivity of aluminum gallium arsenide.The present invention has adopted the gradual aluminum gallium arsenide of component (AlGaAs)/aluminium arsenide (AlAs)/aluminum gallium arsenide (AlGaAs) sandwich, has slowed down the stress that forms after the aluminium arsenide oxidation, makes crystallizing layer can bear in the die preparation impact of cutting and pressure welding.Each crystallizing layer of the present invention utilizes the organic metal vapour deposition (MOCVD) of technology maturation to form.Therefore the present invention has practical value.
Fig. 1 is the profile of luminous diode device structure
Further specify preferred embodiment of the present invention below in conjunction with accompanying drawing, as shown in Figure 1, light-emitting diode of the present invention is on the gallium arsenide substrate 11 with first conductivity type (elecrtonegativity n type, electropositive p type), the AlGaInP (Al of one first conductivity type of growing in succession
xGa
1-x)
0.5In
0.5P limiting layer 12 (claiming lower limit layer again), x 〉=0.7, thickness 1-2 micron; AlGaInP (the Al of an involuntary doping
xGa
1-x)
0.5In
0.5P (0≤x≤0.4) individual layer (or multi-layer quantum well structure (Al
X1Ga
1-x1)
0.5In
0.5P/ (Al
X2Ga
1-x2)
0.5In
0.5P, 0≤x≤0.4,0.4≤x2≤0.6) active area 13, thickness is between the 0.1-1 micron; AlGaInP (Al with second conductivity type
xGa
1-x)
0.5In
0.5P limiting layer 14 (deserving to be called limiting layer again), x 〉=0.7, thickness 1-2 micron; Aluminum gallium arsenide (Al with second conductivity type
xGa
1-xAs)/aluminium arsenide (AlAs)/aluminum gallium arsenide (Al
xGa
1-xAs) current extending 15,16,17,0.7≤x≤0.8 of sandwich and mix carbamate additives for low phosphorus, the gram molecule content of phosphorus is between 0.1%-2%, thickness is greater than 5 microns, aluminium arsenide (AlAs) layer can be the aluminum gallium arsenide mixed crystal that al composition changes, from the side of this layer to opposite side, (Al
xGa
1-xAs), x is increased to 1 from 0.8 and is reduced to 0.8 again, and variation wherein can be linear, also can be parabolic relation, and thickness determines 15 layers of (Al of aluminium arsenide layer position between the 0.01-0.2 micron
xGa
1-xAs) thickness is between 0.1 to 1 micron; GaAs (GaAs) ohmic contact layer 18 with second conduction type.Utilize the masking chemical corrosion that the aluminium arsenide crystallizing layer in the current extending of sandwich is come out, form oxidation window 1A, corrosive liquid can be a phosphoric acid: hydrogen peroxide: the mixture of water, ratio was at 1: 1: 5-1: between 1: 20, window can be circular or square or other figures, its diameter or the length of side or lateral dimension are between the 5-15 micron, and corrosion depth is between aluminium arsenide layer and luminous zone.The steam (with the water of nitrogen by about 80 ℃) that carries by nitrogen carries out the high resistivity current blocking district 1B that oxidation forms the part to the aluminium arsenide crystallizing layer under 350 ℃ to 500 ℃ condition.Utilize vacuum evaporation technology to form the metal electrode 10,19 of corresponding conduction type respectively in the crystalline wafer upper and lower surface.
In sum, the present invention propose a kind of simple in structure, manufacturing technology is reliable, lower-cost new high efficiency semiconductor light-emitting diode and manufacturing technology thereof with practical value.
Claims (8)
1. efficient LED, it includes substrate, lower limit layer, active area, upper limiting layer, expansion area and ohmic contact layer; It is characterized in that: wherein on gallium arsenide substrate, with the AlGaInP limiting layer of first conductivity type of chemical gas-phase deposition method elder generation growth thickness between the 1-2 micron with first conductivity type; The AlGaInP single or multiple lift quantum well structure active area of the involuntary doping of growth thickness between the 0.1-1 micron then; The AlGaInP upper limiting layer with second conductivity type of regrowth thickness between the 1-2 micron; Follow the current extending of growth thickness, and mix carbamate additives for low phosphorus greater than the aluminum gallium arsenide/aluminium arsenide with second conductivity type/aluminum gallium arsenide sandwich of 5 microns; Grow at last one and have the GaAs ohmic contact layer of second conduction type; After above-mentioned each layer growth is finished, utilize the masking chemical corrosion method aluminium arsenide crystallizing layer the current extending of sandwich to be come out from the ohmic contact layer upper surface of last growth, form the oxidation window, the ohmic contact layer upper and lower surface of utilizing vacuum evaporation technology in the end to grow at last forms the metal electrode of corresponding conduction type respectively.
2. efficient LED according to claim 1 is characterized in that: aluminium arsenide and aluminum gallium arsenide crystallizing layer are between the aluminum gallium arsenide crystallizing layer as current-diffusion layer, and its thickness is between the 0.01-0.2 micron.
3. efficient LED according to claim 1 is characterized in that: aluminium arsenide and aluminum gallium arsenide crystallizing layer can be mixed with a certain amount of phosphorus, and the gram molecule content of phosphorus is between 0.1%-2%.
4. efficient LED according to claim 1 is characterized in that: the sandwich of said aluminum gallium arsenide is mixed with certain phosphorus, and the gram molecule content of phosphorus is between 0.5%-2%.
5. efficient LED according to claim 1 is characterized in that: said aluminium arsenide, oxidation forms the steam that its crystallizing layer carries by nitrogen under 350 ℃ of-500 ℃ of temperature.
6. light-emitting diode according to claim 1, it is characterized in that: the oxidation window that said oxidation forms, it forms by the photoetching chemical corrosion, and the used corrosive liquid of this method can be a phosphoric acid: hydrogen peroxide: the mixture of water, its ratio are 1: 1: 5-1: between 1: 20.
7. efficient LED according to claim 1, it is characterized in that: said oxidation window, it is circular or square, or other figure, its diameter or the length of side are between the 5-15 micron, and the degree of depth reaches certain position on the luminous zone under aluminium arsenide crystallizing layer place or the aluminium arsenide crystallizing layer.
8. manufacture method by the said efficient LED of claim 1 is characterized in that it has the following steps:
The AlGaInP limiting layer of first conductivity type of a layer thickness between the 1-2 micron of growing 1) is arranged on the gallium arsenide substrate of first conductivity type at it;
2) the AlGaInP individual layer of an involuntary doping of growth on limiting layer, or multi-layer quantum well structure active area;
3) regrowth one deck has the AlGaInP limiting layer of second conductivity type on active area;
4) one deck of then growing on the AlGaInP limiting layer has the current expansion district of the aluminum gallium arsenide aluminium arsenide/aluminum gallium arsenide sandwich of second conductivity type, and mixes a spot of phosphorus;
5) regrowth one deck has the GaAs ohmic contact layer of second conduction type on extension layer;
6) after the material growth is finished, utilize the masking chemical corrosion method aluminium arsenide crystallizing layer the current extending of sandwich to be come out, form the oxidation window from material surface;
7) steam that carries by nitrogen under 350 ℃ to 500 ℃ condition, carries out the current blocking district that oxidation forms local high resistivity to the aluminium arsenide crystallization;
8) the ohmic contact layer upper and lower surface of utilizing vacuum evaporation technology in the end to grow forms the metal electrode of corresponding conduction type respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98100008A CN1084055C (en) | 1998-01-06 | 1998-01-06 | Efficient LED and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98100008A CN1084055C (en) | 1998-01-06 | 1998-01-06 | Efficient LED and its making method |
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| CN1222769A CN1222769A (en) | 1999-07-14 |
| CN1084055C true CN1084055C (en) | 2002-05-01 |
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| CN98100008A Expired - Fee Related CN1084055C (en) | 1998-01-06 | 1998-01-06 | Efficient LED and its making method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466313C (en) * | 2007-05-21 | 2009-03-04 | 华南师范大学 | Ppn-type light-emitting transistor and its manufacture method |
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| CN100463234C (en) * | 2003-08-01 | 2009-02-18 | 厦门市三安光电科技有限公司 | Surface anti-reflection light-emitting diode |
| CN100359711C (en) * | 2004-08-17 | 2008-01-02 | 友达光电股份有限公司 | Top luminous organic luminous diode structure and its producing method |
| CN100435292C (en) * | 2006-08-24 | 2008-11-19 | 长春理工大学 | Non-selective etched process for GaAs/AlGaAs crystal material |
| CN101604725B (en) * | 2009-07-07 | 2011-01-05 | 扬州乾照光电有限公司 | Light-emitting diode |
| CN102054912A (en) * | 2009-11-04 | 2011-05-11 | 大连路美芯片科技有限公司 | Light emitting diode and manufacture method thereof |
| KR20120039412A (en) * | 2010-10-15 | 2012-04-25 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system |
| CN103560189B (en) * | 2013-11-14 | 2016-05-18 | 安徽三安光电有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN106057998A (en) * | 2016-08-10 | 2016-10-26 | 山东浪潮华光光电子股份有限公司 | GaAs-based light emitting diode chip possessing current blocking layer and current extension layer and manufacturing method thereof |
| CN108258096B (en) * | 2016-12-28 | 2021-03-02 | 英属开曼群岛商錼创科技股份有限公司 | Light emitting diode chip |
| CN111404025B (en) * | 2020-03-30 | 2021-04-06 | 中国科学院半导体研究所 | Epitaxial growth method of AlGaAs/AlGaInP mixed material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466313C (en) * | 2007-05-21 | 2009-03-04 | 华南师范大学 | Ppn-type light-emitting transistor and its manufacture method |
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| CN1222769A (en) | 1999-07-14 |
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Application publication date: 19990714 Assignee: Hi-Tech Optoelectronics Co.,Ltd. Assignor: Semiconductor Inst., Chinese Academy of Sciences Contract record no.: 2010110000028 Denomination of invention: Efficient luminous diode and its manufacturing method Granted publication date: 20020501 License type: Exclusive License Record date: 20100304 |
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