CN100463234C - Surface anti-reflection light-emitting diode - Google Patents
Surface anti-reflection light-emitting diode Download PDFInfo
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- CN100463234C CN100463234C CNB031389562A CN03138956A CN100463234C CN 100463234 C CN100463234 C CN 100463234C CN B031389562 A CNB031389562 A CN B031389562A CN 03138956 A CN03138956 A CN 03138956A CN 100463234 C CN100463234 C CN 100463234C
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- emitting diode
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- anti reflection
- gallium
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Abstract
The disclosed light emitting diode (LED) adds following structure and processing to window layer in general structure: using method of chemical corrosion and oxidation turns one or multiple superficial anti reflection layers developed in epitaxy procedure to one or multiple superficial anti reflection films of aluminum suboxide; anti reflection films can be aluminum-gallium-arsenic layer or aluminum arsenide layer; there may be protection layer above anti reflection films, the protection layer can be gallium arsenide layer or gallium-indium-phosphor layer; in epitaxy procedure for LED, using metal organic chemical vapor deposition (MOCVD) completes development of structure of anti reflection films at one time. Advantages are: less reflectivity of light, and remarkable effect of anti reflection.
Description
One, technical field
The present invention relates to a kind of light-emitting diode with surface anti-reflection film.
Two, background technology
Light-emitting diode has been used to demonstration, decoration, communication etc. widely in the economic life.By adopting different semi-conducting materials and structure, light-emitting diode can cover from ultraviolet to infrared panchromatic scope, and its luminous efficiency and brightness are improved constantly.The conventional structure of light-emitting diode comprises a substrate, and first kind of conductivity charge carrier injects limiting layer, the active layer of control emission wavelength, and second kind of conductivity charge carrier injects limiting layer, and current extending.For opaque substrate, absorbed by opaque substrate for avoiding light, be everlasting substrate and first kind of conductivity charge carrier inject between the limiting layer, insert Bragg reflecting layer, and radiant light is reflexed to the light-emitting area direction.Current extending adopts light transmission conductive material preferably, avoids the absorption of light, reaches the purpose of current expansion simultaneously.Adopt gallium phosphide as extension layer as gallium aluminium phosphorus series light-emitting diode.
Because semi-conducting material has higher refractive index, as the gallium phosphide material refractive index when 633nm that is commonly used for AlGaInP light-emitting diode window layer is 3.32.Thereby have 29% light to be reflected when vertically shining in the air, even use epoxy encapsulation, reflectivity still has 14.3.For further reducing the light reflection, deposited by electron beam evaporation platform or CVD method are long to LED surface with optical anti-reflective film in chip technology.This method adopts silicon dioxide or silicon nitride as anti-reflection film usually.But this process will increase process complexity, but reduce process controllability and rate of finished products, thereby increase product cost.
Three, summary of the invention
The present invention is intended to propose the anti-reflection light-emitting diode in a kind of surface, to realize antireflective effect.
The anti-reflection light-emitting diode in a kind of surface that the present invention proposes, it is characterized in that on the Window layer of conventional structure, having one or more layers surperficial antireflection layer of in epitaxial process, growing, through forming one or more layers alundum (Al surface anti-reflection film after chemical corrosion and the oxidation.
The surface antireflection layer is algaas layer or aluminium arsenide layer, adopts the disposable growth of finishing the anti-reflection film structure when LED epitaxial is grown of metal organic source chemical meteorology deposition (MOCVD) method.
Because the present invention adopts and disposablely in metal organic source chemical meteorology deposition (MOCVD) epitaxial growth to finish the growth that increases membrane structure or initial configuration (as gallium aluminium arsenic or aluminium arsenide), increase the film film through forming the alundum (Al surface after chemical corrosion and the oxidation, alundum (Al can be used as current barrier layer simultaneously, further improves the current expansion effect.Blooming requires its Baidu to control to 1/4 wavelength, and MOCVD can be easily with the precision of THICKNESS CONTROL to A (dust), than deposited by electron beam evaporation or CVD method better precision is arranged, because the available chemical corrosion method of gallium aluminium arsenic (or aluminium arsenide) is directly removed, avoided the cumbersome technology of the anti-reflection film of use dry etching electron evaporation or CVD growth simultaneously.The light-emitting diode that surperficial anti-reflection film is arranged of Xing Chenging like this, its reflection of light rate is littler, and antireflective effect is more remarkable.
Four, description of drawings
Fig. 1, light-emitting diode conventional structure figure;
Fig. 2, the diode epitaxial grown junction composition of the embodiment of the invention;
Fig. 3 is the process route of preparation light-emitting diode of the present invention;
(wherein they (1) (2) (3) (4) of Fig. 3 are the exploded view of four manufacturing process steps)
Wherein: 1 light-emitting diode, 2 surperficial antireflection layers, 3 protective layers, 4 electrode zones, the alundum (Al that forms after 5 oxidations increases film, 6 electrodes.
The surface reflectivity comparative graph that have or not surperficial antireflection layer of Fig. 4 for calculating.
Five, embodiment
Below in conjunction with accompanying drawing the embodiment of the invention is further specified.
Fig. 1 light-emitting diode conventional structure, Fig. 2 is a kind of epitaxial growth structure of diode of the present invention.The typical difference of structure of the present invention and conventional structure is to have on the Window layer surface anti-reflection film of growing in epitaxial process, in this example AlxGa1-xAs (x=80%), its thickness will satisfy have antireflective effect after oxidation, and as to 625 red light emitting diodes, thickness is 1200 dusts.Remove Fig. 2 structure, also can be difficult for the protective layer (as Fig. 3 (1), 3 (2)) of oxidation at gallium aluminium arsenic surface coverage GaAs or gallium indium phosphorus etc.
Fig. 3 for the preparation light-emitting diode of the present invention process route: (a) as Fig. 3 (1), be epitaxial structure of the present invention, promptly on conventional light-emitting diode 1 epitaxial growth surperficial antireflection layer 2 and protective layer 3; (b), remove surperficial antireflection layer 2 and protective layer 3 on the electrode zone 4 with chemical corrosion method (adopting ammoniacal liquor and hydrogen peroxide mixed solvent) as Fig. 3 (2); (c) remove protective layer 3, oxidation antireflection layer 2 (gallium aluminium arsenic) as Fig. 3 (3) thus form alundum (Al anti-reflection film 5; (d), make electrode as Fig. 3 (4).
With reference to Fig. 4, the longitudinal axis is a reflectivity, and transverse axis is an angle of light, calculates hypothesis light and shoots to epoxy resin from the gallium phosphide extension layer, and dotted line is not for there being the anti-reflection strange situation in surface, and solid line is for there being surperficial anti-reflection situation.S, P are two polarisation of light directions, and Sn, Pn be for there being surperficial antireflection layer polarisation of light direction, have surperficial face antireflection layer reflection of light rate little 5%-10%, as shine air, antireflective effect will be more remarkable.
The present invention adopts the disposable growth of finishing anti-reflection film structure or initial configuration (as gallium aluminium arsenic or aluminium arsenide) in metal organic source chemical meteorology deposition (MOCVD) epitaxial growth, through forming the alundum (Al surface anti-reflection film after chemical corrosion and the oxidation, alundum (Al can be used as current barrier layer simultaneously.Because MOCVD can be easily with the precision of THICKNESS CONTROL to A (dust), than deposited by electron beam evaporation or CVD method better precision is arranged, directly remove owing to the available chemical corrosion method of gallium aluminium arsenic (aluminium arsenide) simultaneously, avoided the cumbersome technology of the anti-reflection film of use dry etching electron beam evaporation or CVD growth, the light-emitting diode that surperficial anti-reflection film is arranged of Xing Chenging like this, its reflection of light rate is littler, and antireflective effect is more remarkable.
Claims (3)
1. the anti-reflection light-emitting diode in surface is characterized in that: be that one or more layers surperficial antireflection layer of growing in epitaxial process is arranged on the Window layer of conventional structure, through forming one or more layers alundum (Al surface anti-reflection film after chemical corrosion and the oxidation.
2. the anti-reflection light-emitting diode in a kind of surface according to claim 1 is characterized in that surperficial antireflection layer is algaas layer or aluminium arsenide layer.
3. the anti-reflection light-emitting diode in a kind of surface according to claim 1 is characterized in that adopting the disposable growth of finishing the anti-reflection film structure when LED epitaxial is grown of metal organic source chemical meteorology deposition (MOCVD) method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031389562A CN100463234C (en) | 2003-08-01 | 2003-08-01 | Surface anti-reflection light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031389562A CN100463234C (en) | 2003-08-01 | 2003-08-01 | Surface anti-reflection light-emitting diode |
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| CN1581518A CN1581518A (en) | 2005-02-16 |
| CN100463234C true CN100463234C (en) | 2009-02-18 |
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| CNB031389562A Expired - Lifetime CN100463234C (en) | 2003-08-01 | 2003-08-01 | Surface anti-reflection light-emitting diode |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011009524A (en) * | 2009-06-26 | 2011-01-13 | Hitachi Cable Ltd | Light-emitting element, and method of making the light-emitting element |
| CN101621106B (en) * | 2009-07-30 | 2012-05-16 | 中国计量学院 | LED with antireflection film and preparation method thereof |
| CN105470362B (en) * | 2015-12-31 | 2018-08-14 | 天津三安光电有限公司 | A kind of preparation method of light emitting diode |
| CN112736176B (en) * | 2019-10-14 | 2023-01-13 | 中国科学院金属研究所 | Method for improving luminous efficiency of light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997040558A1 (en) * | 1996-04-22 | 1997-10-30 | W.L. Gore & Associates, Inc. | Vertical cavity lasers with monolithically integrated refractive microlenses |
| CN1222769A (en) * | 1998-01-06 | 1999-07-14 | 中国科学院半导体研究所 | Efficient LED and its making method |
| CN1368764A (en) * | 2001-01-31 | 2002-09-11 | 广镓光电股份有限公司 | Structure of hihg-brightness blue light emitting crystal grain |
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2003
- 2003-08-01 CN CNB031389562A patent/CN100463234C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997040558A1 (en) * | 1996-04-22 | 1997-10-30 | W.L. Gore & Associates, Inc. | Vertical cavity lasers with monolithically integrated refractive microlenses |
| CN1222769A (en) * | 1998-01-06 | 1999-07-14 | 中国科学院半导体研究所 | Efficient LED and its making method |
| CN1368764A (en) * | 2001-01-31 | 2002-09-11 | 广镓光电股份有限公司 | Structure of hihg-brightness blue light emitting crystal grain |
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Assignee: Lightning Optoectronic Technology (Shenzhen) Co.,Ltd. Assignor: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Contract record no.: 2010440020064 Denomination of invention: Surface anti-reflection light-emitting diode Granted publication date: 20090218 License type: Exclusive License Open date: 20050216 Record date: 20100607 |
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