CN101604725B - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- CN101604725B CN101604725B CN2009101812369A CN200910181236A CN101604725B CN 101604725 B CN101604725 B CN 101604725B CN 2009101812369 A CN2009101812369 A CN 2009101812369A CN 200910181236 A CN200910181236 A CN 200910181236A CN 101604725 B CN101604725 B CN 101604725B
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Abstract
The invention provides a light-emitting diode, and relates to the technical field of an epitaxial structure of light-emitting diode. On the N-GaAs substrate, the epitaxial structure comprises the following layers from bottom to top in sequence: an n-GaAs buffer layer, a tunneling junction, a p-GaAs buffer layer, a Bragg reflective layer, a p-(AlxGa1-x)yIn1-yP lower limiting layer, an Undoped-(AlxGa1-x)yIn1-yP active area, an n-(AlxGa1-x)yIn1-yP upper limiting layer, a current expanding layer, a surface coarsening layer and a GaAs ohm contacting layer. The light-emitting diode can increase the effective lighting areas and greatly improve the brightness, and by the tunneling junction, the n-GaAs substrate can be connected with other effective epitaxial layers. Compared with the currently proven inversion coarsening LED, the LED of the invention has the advantages of saving complex chip process steps such as substrate removal, bonding and the like, simplifying the chip flow, improving production efficiency, lowering production cost and improving the finished product ratio.
Description
Technical field
The present invention relates to the led technology field, particularly its epitaxial structure technical field.
Background technology
Since the early stage appearance of AlGaInP redness, yellow light-emitting diode in the 20 actual nineties, the research and development of after a while GaN blueness, green and white light-emitting diode, these light-emitting diodes have been widely used on a lot of efficient solid-state illumination fields, for example full color screen display, lamps for vehicle, backlight, traffic lights, view and normal lighting etc.
The AlGaInP light emitting diode construction reaches its maturity, but owing to many reasons, the external quantum efficiency of AlGaInP light-emitting diode is on the low side.One of them major reason is exactly the light that many active areas emit, through epitaxial loayer the time, because total reflection takes place refringence.The light that makes many active areas send finally can't penetrate from epitaxial loayer.So, how to improve the external quantum efficiency of AlGaInP light-emitting diode, this part light extraction that total reflection takes place is come out, to improve its brightness, become the emphasis of present research.
Summary of the invention
The object of the invention provides the high novel light-emitting diode of a kind of brightness.
Technical solution of the present invention is: epitaxial structure is followed successively by n-GaAs resilient coating, tunnel junctions, p-GaAs resilient coating, Bragg reflecting layer from the bottom to top on the N-GaAs substrate, (wherein x is 0.6～1 to p-(AlxGa1-x) yIn1-yP lower limit layer, y is 0.4～0.6), (wherein x is 0～0.5 to Undoped-(AlxGa1-x) yIn1-yP active area, y is 0.4～0.6), n-(AlxGa1-x) yIn1-yP upper limiting layer (wherein x is 0.6～1, and y is 0.4～0.6), current extending, surface coarsening layer and GaAs ohmic contact layer.
The present invention adds one deck roughened layer on conventional LED structure, roughened layer can increase effective lighting area of LED device, and the light that can make original generation total reflection and can't penetrate, next time with different angles directive interface, these light are extracted from epitaxial loayer again, improved the external quantum efficiency of AlGaInP light-emitting diode greatly, to improve brightness.The present invention also utilizes tunnel junctions that n-GaAs substrate and other effective epitaxial loayers are coupled together.The upside-down mounting alligatoring LED that contrasts present comparative maturity is (referring to document IEEE PHOTONICS TECHNOLOGY LETTERS, VOL.20, NO.20, OCTOBER 15,2008), removed complicated chip technology step such as substrate desquamation, bonding, thereby facilitating chip flow process, improve production efficiency greatly, reduced production costs, improved rate of finished products.
Tunnel junctions of the present invention can be among n-GaAs/p-GaAs, n-AlGaAs/p-AlGaAs, n-GaAs/p-AlGaAs, n-AlGaAs/p-GaAs, n-AlInP/p-AlInP, n-GaInP/p-GaInP, the n-AlGaInP/p-AlGaInP any.
Bragg reflecting layer of the present invention can be among p-AlAs/p-AlxGa1-xAs, p-AlInP/p-(AlxGa1-x) yIn1-yP, the AlAs/GaAs any.
Above-mentioned current extending is n-(AlxGa1-x) yIn1-yP.And among n-(AlxGa1-x) yIn1-yP, x is 0～1, and y is 0.45～0.55.
The doping content of current extending of the present invention is 1 * 10
18～1 * 10
20
The epitaxial thickness of current extending of the present invention is 5000
～50000
Surface coarsening layer of the present invention can be among n-AlInP, n-(AlxGa1-x) yIn1-yP, the n-GaP any.
Among the yIn1-yP of said n-(AlxGa1-x), x is 0～1, and y is 0.45～0.55.
The doping content of surface coarsening layer of the present invention is 1 * 10
18～1 * 10
20
The epitaxial thickness of surface coarsening layer of the present invention is 5000
～50000
Description of drawings
Fig. 1 is a kind of structural representation of the present invention.
Embodiment
Concrete growing method step of the present invention is as follows:
1, under 300 ℃～500 ℃ temperature, n-GaAs substrate 11 is carried out surface treatment, remove aqueous vapor.
2, growth n-GaAs resilient coating 1.
3, growth tunnel junctions 2.Tunnel junctions is extremely important, is used for connecting n-GaAs resilient coating 1 and p-GaAs resilient coating 3, guarantees forward current conducting still in the n-p knot, is one of key point of the present invention.
Tunnel junctions 2 can be among n-GaAs/p-GaAs, n-AlGaAs/p-AlGaAs, n-GaAs/p-AlGaAs, n-AlGaAs/p-GaAs, n-AlInP/p-AlInP, n-GaInP/p-GaInP, the n-AlGaInP/p-AlGaInP any.
4, growth p-GaAs resilient coating 3.
5, growth Bragg reflecting layer 4 is used for reflecting the light that active area penetrates, in order to avoid thoroughly absorbed by GaAs.
Bragg reflecting layer 4 can be p-AlAs/p-AlxGa1-xAs (the x value is 0～0.7) or p-AlInP/p-(AlxGa1-x) yIn1-yP (the x value is 0.3～0.7, and the y value is 0.4～0.6).
6, growth p-(AlxGa1-x) yIn1-yP lower limit layer 5.Purpose is limiting carrier, increases recombination probability.
7, growth Undoped-(AlxGa1-x) yIn1-yP (wherein the x value is 0～0.5, and the y value is 0.4～0.6) active area 6.
8, growth n-(AlxGa1-x) yIn1-yP (wherein the x value is 0.6～1, and the y value is 0.4～0.6) upper limiting layer 7.Act on identically, be limiting carrier, increase recombination probability with lower limit layer 5.
9, growth current extending 8.Better extend current makes CURRENT DISTRIBUTION even, improves the uniformity of light-emitting diode parameters.
Current extending is n-(AlxGa1-x) yIn1-yP, Al component x=0～1 wherein, and the y value is 0.45～0.55.The doping content of current extending is 1 * 10
18～1 * 10
20, epitaxial thickness is 5000
～50000
10, the growing surface roughened layer 9.The growth of surface coarsening layer is two of a key point of the present invention.Roughened layer has obviously improved the external quantum efficiency of light-emitting diode after by alligatoring, and light intensity increases substantially.
Surface coarsening layer 9 can be among n-(AlxGa1-x) yIn1-yP, the n-GaP any.
Al component x=0～1 of yIn1-yP of said n-(AlxGa1-x), the y value is 0.45～0.55.
The doping content of surface coarsening layer 9 is 1 * 10
18～1 * 10
20, epitaxial thickness is 5000
～50000
11, growth ohmic contact layer 10.
The present invention all adopts metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth.
Claims (8)
1. a light-emitting diode is characterized in that epitaxial structure is followed successively by n-GaAs resilient coating, tunnel junctions, p-GaAs resilient coating, Bragg reflecting layer, p-(AlxGa1-x) yIn1-yP lower limit layer, Undoped-(AlxGa1-x) yIn1-yP active area, n-(AlxGa1-x) yIn1-yP upper limiting layer, current extending, surface coarsening layer and GaAs ohmic contact layer from the bottom to top on the N-GaAs substrate; In described p-(AlxGa1-x) the yIn1-yP lower limit layer, x is 0.6～1, and y is 0.4～0.6; In described Undoped-(AlxGa1-x) the yIn1-yP active area, x is 0～0.5, and y is 0.4～0.6; In described n-(AlxGa1-x) the yInl-yP upper limiting layer, x is 0.6～1, and y is 0.4～0.6; Described current extending is n-(AlxGa1-x) yIn1-yP, and wherein, x is 0～1, and y is 0.45～0.55; Described surface coarsening layer is any among n-(AlxGa1-x) yIn1-yP, the n-GaP.
2. according to the described light-emitting diode of claim 1, it is characterized in that described tunnelling becomes any among n-GaAs/p-GaAs, n-AlGaAs/p-AlGaAs, n-GaAs/p-AlGaAs, n-AlGaAs/p-GaAs, n-AlInP/p-AlInP, n-GaInP/p-GaInP, the n-AlGaInP/p-AlGaInP.
3. according to the described light-emitting diode of claim 1, it is characterized in that described Bragg reflecting layer is p-AlAs/p-AlxGa1-xAs or p-AlInP/p-(AlxGa1-x) yIn1-yP; Among the described p-AlAs/p-AlxGa1-xAs, x is 0～0.7; Among described p-AlInP/p-(AlxGa1-x) yIn1-yP, x is 0.3～0.7, and y is 0.4～0.6.
4. according to the described light-emitting diode of claim 1, the doping content that it is characterized in that described current extending is 1 * 10
18～1 * 10
20
5. according to the described light-emitting diode of claim 1, it is characterized in that the epitaxial thickness of described current extending is
6. according to the described light-emitting diode of claim 1, it is characterized in that x is 0～1 in described n-(AlxGa1-x) the yIn1-yP lower limit layer, y is 0.45～0.55.
7. according to the described light-emitting diode of claim 1, the doping content that it is characterized in that described surface coarsening layer is 1 * 10
18～1 * 10
20
8. according to the described light-emitting diode of claim 1, it is characterized in that the epitaxial thickness of described surface coarsening layer is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101812369A CN101604725B (en) | 2009-07-07 | 2009-07-07 | Light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101812369A CN101604725B (en) | 2009-07-07 | 2009-07-07 | Light-emitting diode |
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|---|---|
| CN101604725A CN101604725A (en) | 2009-12-16 |
| CN101604725B true CN101604725B (en) | 2011-01-05 |
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| CN2009101812369A Active CN101604725B (en) | 2009-07-07 | 2009-07-07 | Light-emitting diode |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882520A (en) * | 2014-02-27 | 2015-09-02 | 山东浪潮华光光电子股份有限公司 | Epitaxial structure of coarsened LED chip, and manufacturing method thereof |
| CN105449055A (en) * | 2015-12-22 | 2016-03-30 | 扬州乾照光电有限公司 | Series PN junction LED and production method thereof |
| CN108172638B (en) * | 2018-02-11 | 2024-06-21 | 扬州乾照光电有限公司 | Three-junction solar cell |
| CN111725365B (en) * | 2019-03-21 | 2021-06-08 | 山东华光光电子股份有限公司 | GaAs-based multi-junction yellow-green light LED and preparation method thereof |
| CN113451448B (en) * | 2020-03-30 | 2022-03-25 | 重庆康佳光电技术研究院有限公司 | LED epitaxial structure, p-type GaP layer coarsening method thereof and LED chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1222769A (en) * | 1998-01-06 | 1999-07-14 | 中国科学院半导体研究所 | Efficient LED and its making method |
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN1780004A (en) * | 2005-10-19 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | Vertical cavity photoelectric device containing tunnel junction |
| CN1822404A (en) * | 2006-01-18 | 2006-08-23 | 北京工业大学 | Single chip white light LED with surface as tunnel junction structure |
| CN1885579A (en) * | 2006-06-23 | 2006-12-27 | 北京工业大学 | Light-emitting diode structure based on GaN/sapphire transparent substrate and preparation method |
-
2009
- 2009-07-07 CN CN2009101812369A patent/CN101604725B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1222769A (en) * | 1998-01-06 | 1999-07-14 | 中国科学院半导体研究所 | Efficient LED and its making method |
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN1780004A (en) * | 2005-10-19 | 2006-05-31 | 中国科学院上海微系统与信息技术研究所 | Vertical cavity photoelectric device containing tunnel junction |
| CN1822404A (en) * | 2006-01-18 | 2006-08-23 | 北京工业大学 | Single chip white light LED with surface as tunnel junction structure |
| CN1885579A (en) * | 2006-06-23 | 2006-12-27 | 北京工业大学 | Light-emitting diode structure based on GaN/sapphire transparent substrate and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| 刘思南等.表面粗化提高红光LED的光提取效率.《固体电子学研究与进展》.2008,第28卷(第2期),第245-247页. * |
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| CN101604725A (en) | 2009-12-16 |
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