CN106087066A - A kind of method improving quartz crystal slice surface roughness - Google Patents
A kind of method improving quartz crystal slice surface roughness Download PDFInfo
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- CN106087066A CN106087066A CN201610417186.XA CN201610417186A CN106087066A CN 106087066 A CN106087066 A CN 106087066A CN 201610417186 A CN201610417186 A CN 201610417186A CN 106087066 A CN106087066 A CN 106087066A
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- quartz crystal
- crystal slice
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- thickness
- mass concentration
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
What the present invention proposed is a kind of method improving quartz crystal slice surface roughness, comprises the steps: 1) it is first 30% ammonium acid fluoride (NH by mass concentration4HF2) solution and mixed solution etch quartz crystal wafer that mass concentration is 15% Fluohydric acid. (HF) solution;2) quartz crystal slice is cleaned with pure water;3) it is 26% hydrofluoric acid solution etch quartz crystal wafer by mass concentration again；4) during etch quartz crystal wafer, corrosive liquid temperature is 36 DEG C；If quartz crystal slice totally needs the thickness of etching away to be t, then the thickness of ammonium acid fluoride and Fluohydric acid. mixed solution etching away is t*1/3, and the thickness of hydrofluoric acid solution etching away is t*2/3.Advantage: with two kinds of etchant solution etch quartz crystal wafer surfaces, solve the way in the past improving the necessary grinding and polishing of quartz crystal slice surface roughness.Equipment investment is few, easy and simple to handle, production efficiency is high, processing cost is low, product quality is easily controlled.
Description
Technical field
The present invention relates to a kind of method improving quartz crystal slice surface roughness, belong to components and parts manufacturing technology neck
Territory.
Background technology
The quartz crystal slice that high-quality quartz crystal components and parts are used, needs grinding and polishing quartz crystal slice with improvement table
Surface roughness, the method cost is high, efficiency is low.The solution of use fluoride ion, can be certain to quartz crystal slice surface corrosion
Degree improves quartz crystal slice surface roughness, but does not far reach polishing effect.Because practice finds: use Fluohydric acid.
(HF) quartz crystal slice of solution corrosion, its surface there will be pit, and quartz crystal slice roughness is undesirable, uses ammonium acid fluoride
(NH4HF2) quartz crystal slice of solution corrosion, its surface there will be projection, and quartz crystal slice roughness is the most undesirable.
Summary of the invention
What the present invention proposed is a kind of method improving quartz crystal slice surface roughness, and its purpose is intended to substitute traditional
Abrasive polishing method, makes quartz crystal slice surface reach polishing effect, thus improves such quartz crystal slice processing and manufacturing efficiency,
Reduce manufacturing cost.
The Technical Solving of the present invention: a kind of method improving quartz crystal slice surface roughness, including walking as follows
Rapid:
1) it is first 30% ammonium acid fluoride (NH by mass concentration4HF2) solution and mass concentration be the mixed of 15% Fluohydric acid. (HF) solution
Close solution corrosion quartz crystal slice;
2) quartz crystal slice is cleaned with pure water;
3) it is 26% Fluohydric acid. (HF) solution corrosion quartz crystal slice by mass concentration again；
4) during etch quartz crystal wafer, corrosive liquid temperature is 36 DEG C；If quartz crystal slice totally needs the thickness of etching away to be t,
Then ammonium acid fluoride (NH4HF2) and the thickness of Fluohydric acid. mixed solution etching away be t*1/3, Fluohydric acid. (HF) solution corrosion goes
The thickness fallen is t*2/3.
The technique effect of the present invention
The quartz crystal slice that the present invention makes, surface roughness, close to grinding polishing effect, solves traditional must using and grinds
Grinding and polishing light just can be to realize the preferable mode of quartz crystal slice surface roughness.Technological process is simple and direct, can be with low cost, large quantities of
Amount, high efficiency production, there is preferable promotional value.
Detailed description of the invention
A kind of method improving quartz crystal slice surface roughness, is characterized in that the method comprises the steps:
1) it is first 30% ammonium hydrogen fluoride solution (NH by mass concentration4HF2) and mass concentration be the mixed of 15% Fluohydric acid. (HF) solution
Close solution corrosion quartz crystal slice;
2) quartz crystal slice is cleaned with pure water;
3) it is 26% Fluohydric acid. (HF) solution corrosion quartz crystal slice by mass concentration again；
4) during etch quartz crystal wafer, corrosive liquid temperature is 36 DEG C；If the thickness that quartz crystal slice totally needs etching away is
T, then ammonium acid fluoride (NH4HF2) and the thickness of Fluohydric acid. (HF) mixed solution etching away be t*1/3, Fluohydric acid. (HF) is molten
The thickness that corrosion removes is t*2/3.
The present invention successively uses ammonium acid fluoride (NH4HF2) and Fluohydric acid. (HF) mixed solution, Fluohydric acid. (HF) solution corrosion
Quartz crystal slice, it is achieved the final surface roughness of quartz crystal slice reaches the effect that polishing manufactures.
When etch quartz crystal wafer, two kinds of solution ratios, use order, corrosive liquid temperature, and two kinds of corrosive liquids pair
The surface roughness final to English crystal wafer of distributing of total corrosion thickness (typically at 0.02mm～0.06mm) reaches what polishing manufactured
Effect is significant.
Embodiment
The method improving quartz crystal slice surface roughness, comprises the steps:
1. quartz crystal slice prerinse: concentration 96% concentrated sulphuric acid (H2SO4) boil and wash 30 minutes, temperature 60 C-70 DEG C;
2. pure water (4M more than Ω cm) shower: 5 minutes；
3. mixed solution corrosion: mass concentration is 30% ammonium hydrogen fluoride solution (NH4HF2) and mass concentration be 15% Fluohydric acid.
(HF) the mixed solution corrosion of solution, corrosive liquid temperature 35 DEG C-37 DEG C;
4. pure water (4M more than Ω cm) shower: 5 minutes；
5. quartz crystal slice is dried: 80 DEG C-90 DEG C, 30 minutes；
6. 3. quartz crystal slice frequency measurement, if miss the mark frequency, then repeat step,
7. Fluohydric acid. (HF) solution corrosion: mass concentration is 26% Fluohydric acid. (HF) solution corrosion quartz crystal slice, corrosive liquid temperature
35℃ -37℃②；
8. pure water (4M more than Ω cm) shower: 5 minutes；
9. quartz crystal slice is dried: 80 DEG C-90 DEG C, 30 minutes；
10. 7. quartz crystal slice frequency measurement, if miss the mark frequency, then repeat step.
To step 6., 10. two benches target frequency calculated example:
With fundamental frequency AT cut type 20000KHz quartz crystal slice substrate, this method is used to manufacture 30000KHz quartz crystal slice:
(1) 20000KHz quartz crystal slice thickness: t0=Kf/f0=1670KHz mm/20000=0.08350mm
(Kf=1670KHz mm, for fundamental frequency AT cut type quartz crystal slice frequency constant)；
(2) 30000KHz quartz crystal slice thickness: t1=1670KHz mm/30000=0.05567mm；
(3) quartz crystal slice needs the gross thickness of etching away: t=t0-t1=0.08350mm-0.05567mm=
0.02783mm；
The most 6. phase targets frequency f1=1670KHz mm/(0.08350mm-1/3*0.02783mm)=22500KHz；
The most 10. phase targets frequency f2=30000KHz.
Claims (1)
1. the method improving quartz crystal slice surface roughness, is characterized in that the method comprises the steps:
1) it is first 30% ammonium acid fluoride and mixed solution etch quartz crystal wafer that mass concentration is 15% Fluohydric acid. by mass concentration;
2) quartz crystal slice is cleaned with pure water;
3) it is 26% hydrofluoric acid solution etch quartz crystal wafer by mass concentration again；
4) during etch quartz crystal wafer, corrosive liquid temperature is 36 DEG C；If quartz crystal slice totally needs the thickness of etching away to be t,
Then the thickness of ammonium acid fluoride and Fluohydric acid. mixed solution etching away is t*1/3, and the thickness of hydrofluoric acid solution etching away is t*
2/3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610417186.XA CN106087066A (en) | 2016-06-15 | 2016-06-15 | A kind of method improving quartz crystal slice surface roughness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610417186.XA CN106087066A (en) | 2016-06-15 | 2016-06-15 | A kind of method improving quartz crystal slice surface roughness |
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| Publication Number | Publication Date |
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| CN106087066A true CN106087066A (en) | 2016-11-09 |
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ID=57846246
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| CN201610417186.XA Pending CN106087066A (en) | 2016-06-15 | 2016-06-15 | A kind of method improving quartz crystal slice surface roughness |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109371456A (en) * | 2018-10-17 | 2019-02-22 | 山东博达光电有限公司 | The corrosion device and caustic solution of synthetic quartzcrystal seed wafer |
| CN110790512A (en) * | 2019-10-12 | 2020-02-14 | 天津大学 | Method for stripping quartz plate by wet etching |
| CN113621375A (en) * | 2021-07-30 | 2021-11-09 | 深圳市科玺化工有限公司 | Quartz wafer etching additive and preparation method thereof |
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| CN101708497A (en) * | 2009-12-11 | 2010-05-19 | 廊坊中电大成电子有限公司 | Method for cleaning quartz crystal frequency chip |
| CN102142823A (en) * | 2010-12-31 | 2011-08-03 | 苏州普锐晶科技有限公司 | Quartz tuning fork machining method |
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| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN103701424A (en) * | 2013-12-24 | 2014-04-02 | 珠海东精大电子科技有限公司 | Preparation method for 49S quartz crystal oscillator |
| CN104425298A (en) * | 2013-08-22 | 2015-03-18 | 北京兆易创新科技股份有限公司 | Method for etching memory cell opening of flash memory |
| CN105141271A (en) * | 2015-09-25 | 2015-12-09 | 江苏海峰电子有限公司 | Processing method for manufacturing crystal base plate of quartz-crystal resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101532180A (en) * | 2009-03-11 | 2009-09-16 | 南京德研电子有限公司 | Method for frequency corrosion of wafers and equipment thereof |
| CN101708497A (en) * | 2009-12-11 | 2010-05-19 | 廊坊中电大成电子有限公司 | Method for cleaning quartz crystal frequency chip |
| CN102443395A (en) * | 2010-09-30 | 2012-05-09 | 韩国泰科诺赛美材料株式会社 | Compound for wet etching silicon dioxide |
| CN102142823A (en) * | 2010-12-31 | 2011-08-03 | 苏州普锐晶科技有限公司 | Quartz tuning fork machining method |
| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN104425298A (en) * | 2013-08-22 | 2015-03-18 | 北京兆易创新科技股份有限公司 | Method for etching memory cell opening of flash memory |
| CN103701424A (en) * | 2013-12-24 | 2014-04-02 | 珠海东精大电子科技有限公司 | Preparation method for 49S quartz crystal oscillator |
| CN105141271A (en) * | 2015-09-25 | 2015-12-09 | 江苏海峰电子有限公司 | Processing method for manufacturing crystal base plate of quartz-crystal resonator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109371456A (en) * | 2018-10-17 | 2019-02-22 | 山东博达光电有限公司 | The corrosion device and caustic solution of synthetic quartzcrystal seed wafer |
| CN110790512A (en) * | 2019-10-12 | 2020-02-14 | 天津大学 | Method for stripping quartz plate by wet etching |
| CN113621375A (en) * | 2021-07-30 | 2021-11-09 | 深圳市科玺化工有限公司 | Quartz wafer etching additive and preparation method thereof |
| CN113621375B (en) * | 2021-07-30 | 2022-07-01 | 深圳市科玺化工有限公司 | Quartz wafer etching additive and preparation method thereof |
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Application publication date: 20161109 |