CN101532180A - Method for frequency corrosion of wafers and equipment thereof - Google Patents
Method for frequency corrosion of wafers and equipment thereof Download PDFInfo
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- CN101532180A CN101532180A CN200910025830A CN200910025830A CN101532180A CN 101532180 A CN101532180 A CN 101532180A CN 200910025830 A CN200910025830 A CN 200910025830A CN 200910025830 A CN200910025830 A CN 200910025830A CN 101532180 A CN101532180 A CN 101532180A
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Abstract
The invention relates to a method for the frequency corrosion of wafers and equipment thereof. The corrosion method comprises the process steps: 1, the preparation of a corrosive liquid; 2, corrosion quantity; 3, the up-down movement of a vibration frame of an etching tank; 4, the random sample test of the wafers and the automatic calculation of corrosion time of the batch wafers by a computer; and 5, the starting of an etching machine according to the corrosion time. The structure of the equipment comprises that: the inside of a frame is provided with the etching tank, the etching tank is close to three rinse baths, the three rinse baths and the etching tank are partitioned by a partition, partition boards are arranged among the three rinse baths, and the bottoms of the three rinse baths are communicated; a transmission rod is arranged in the three rinse baths and the etching tank respectively, and is provided with a fixed bracket, and a wafer-receiving basket is arranged on the fixed bracket; and the periphery of the etching tank is provided with a water discharge isolation layer. The method has the advantages that the yield of the wafers for automatic corrosion is 8 times of the prior processing yield; the frequency control of the corrosion is performed by a computer archive, which reduces human factors; and the corrosion and the cleaning can be synchronously performed, thereby reducing the labor and also improving the efficiency.
Description
Technical field
What the present invention relates to is a kind of method and equipment thereof that is used for frequency corrosion of wafers, belongs to corrosion wafer technologies field.
Background technology
Be used for wafer corrosive processing method in the prior art and comprise following processing step:
1) configuration of corrosive fluid;
2) supplied materials is taken a sample test several, and notes the frequency of wafer, calculates to want corrosive approximate time;
3) holding the corrosion basket of putting wafer well with hand is put into and rocks corrosion in the corrosive fluid;
4) half that erodes to computing time calculates and wants corrosive speed and calculate etching time;
5) it is clean with the hot water injection to corrode good wafer, pours in the container that is placed with the hydrochloric acid diluent, with ultrasonic echography 30 minutes;
6) wafer cleans: and hot water cleans three times → warm water and gives a baby a bath on the third day after its birth time → and the electromagnetic oven pure water boils 5 minutes → dehydration of alcohol → oven dry.
Above-mentioned defective workmanship: manually corrode, corrosive efficient is low, and a people can only operate one, one only can corrode 1 basket/time; The management and control of corrosion frequency needs the operator manually to calculate erosion rate; Corrode back wafer cleaning and clean by hand, increase manpower.
Summary of the invention
The present invention proposes a kind of method and equipment thereof that is used for frequency corrosion of wafers, be intended to overcome the above-mentioned defective of existing in prior technology, realize process automation, reduced the unstable product quality that causes because of human factor, thereby improved production efficiency effectively, guaranteed the consistence of quality product.
Technical solution of the present invention: a kind of method that is used for frequency corrosion of wafers is characterized in that this method comprises following processing step:
One, the configuration of corrosive fluid:
F〉the ammonium bifluoride aqueous solution (electronic-grade) during 30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 65 ± 2 ℃ of temperature;
The ammonium bifluoride aqueous solution (electronic-grade) during 16MHz≤F＜30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 50 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during F＜8MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 2:1, the mixed solution 17L after preparing is put in the etching tank, 78 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during 16MHz＜F≤30MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 1:1.5, the mixed solution 17L after preparing is put in the etching tank, 60 ± 2 ℃ of temperature;
Two, corrosion quantity: F≤17MHz1000～2000 slice/basket, F〉17MHz1500～2000/ basket; F in the formula is a frequency; The specification of wafer, totally 4 baskets;
Three, be subjected to the etching tank vibrating grid of electric machine control, under the control of motor, move up and down: 1～1.5 time/second (wafer model HC-49U/S);
Four, from taking a sample test 20 of wafers the corrosive wafer at random, and with this frequency record of 20 in the computer archives, 5 that get its medium frequency maximum are carried out the corrosion first time, should be in the computer archives before carrying out corrosion for the first time with time of setting and frequency record, with the first time corrosive target value be the average frequency value in above-mentioned 20 add the maximum in above-mentioned 20 frequency values divided by 2, the etching time of this batch wafers is calculated automatically by computer;
Five, start etching machine, treat that wafer erodes to the specified time, 4 basket wafers are brought out, put into water temperature and clean at three road rinse baths of 80-100 degree, every a groove scavenging period 10～15 minutes was placed in the pure water ultrasonic cleaning 10～15 minutes after three road grooves clean, put into electronic-grade alcohol ultra-sonic dehydration then 8～10 minutes, wafer surface water mark is removed in oven dry at last
The water yield in the described three road rinse baths accounts for the volume of three road rinse baths 3/4;
Described pure water, electronic-grade alcohol account for the volume of place ultrasonic wave 2/4;
The equipment that is used for frequency corrosion of wafers, structure are to be provided with etching tank in the corrosion frame, and etching tank is close to three road rinse baths, separates with dividing plate between three road rinse baths and etching tank, between three road rinse baths dividing plate is arranged, and the bottom of three road rinse baths communicates; A transmission rod is respectively arranged in three road rinse baths and the etching tank, the etching tank vibrating grid is arranged on the transmission rod, hold the wafer basket and be placed on this vibrating grid; Described etching tank is with the interlayer that discharges water outward.
Advantage of the present invention: replace artificial corrosion wafer by automatic corrosion wafer, function corrosion 4/ time, and everyone operates 2 equipment, is about 8 times of former processing output; Corrosion replaces manually carrying out the frequency management and control with the computer archives; Be convenient to automatization, reduce human factor; Corrode wafer and clean with automated installation and replace manually cleaning, thereby corrosion and cleaning can be operated work that replacement can not carry out originally simultaneously simultaneously and reduces manpower and also improved efficient.
Description of drawings
Accompanying drawing 1 is the device structure synoptic diagram that is used for frequency corrosion of wafers.
Among the figure 1 is that etching tank, 2 is three road rinse baths, the 3rd, A dividing plate, the 4th, B dividing plate, the 5th, transmission rod, the 6th, etching tank vibrating grid, the 7th, the interlayer that discharges water, the 8th, extractor fan.
Embodiment
Contrast accompanying drawing, its structure are to be provided with etching tank 1 in corrosion in the frame, and 1 of etching tank 1 next-door neighbour's three road rinse baths, 2, three road rinse baths 2 and etching tank separate with the A dividing plate, and four B dividing plates are arranged in the three road rinse baths 2,, the bottom of three road rinse baths 2 communicates; A transmission rod 5 is respectively arranged in three road rinse baths 2 and the etching tank 1, individual etching tank vibrating grid 6 is arranged on the transmission rod 5, hold the wafer basket and be placed on this etching tank vibrating grid 6; Described etching tank 1 is outer to be with the interlayer 7 that discharges water,
The height H of two A dividing plates in the described three road rinse baths 2 is different.
There is a common extractor fan 8 top of etching tank 1 and three road rinse baths 2.Embodiment 1
The processing step of frequency corrosion of wafers method:
One, the configuration of corrosive fluid: F〉the ammonium bifluoride aqueous solution (electronic-grade) during 30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 65 ± 2 ℃ of temperature;
The ammonium bifluoride aqueous solution (electronic-grade) during 16MHz≤F＜30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 50 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during F＜8MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 2:1, the mixed solution 17L after preparing is put in the etching tank, 78 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during 16MHz＜F≤30MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 1:1.5, the mixed solution 17L after preparing is put in the etching tank, 60 ± 2 ℃ of temperature;
Two, corrosion quantity: F≤17MHz1000 sheet/basket, F〉the 17MHz1500/ basket; F in the formula is a frequency; The specification of wafer, totally 4 baskets;
Three, moved up and down by the etching tank vibrating grid of buncher control: 1 time/second (wafer model HC-49U/S);
Four, from will taking a sample test 20 of wafers the corrosive wafer at random, and with this frequency of 20 (19537,19577,19539,19565,19576,19533,19536,19580,19586,19570,19560,19568,19565,19539,19575,19578,19567,19569,19539,19567) (unit: KHZ) be recorded in the computer archives, 5 that get its medium frequency maximum are carried out the corrosion first time, and etching time (1000S) after carrying out corrosion for the first time and frequency record are in the computer archives, and frequency is that the processing parameter of 20M is 19910～20030～20150 (units: KHZ).With the first time corrosive target value be that the central value (20030) of processing parameter adds that the maximum value (20150) of processing parameter is divided by 2, calculate the corrosive target value and be input in the computer archives, the etching time of this batch wafers calculates (1033S) automatically by computer.
Five, start etching machine, treat that wafer erodes to the etching time of regulation, 4 basket wafers are brought out, put into water temperature and clean at three road rinse baths of 80 degree, every a groove scavenging period 10 minutes was placed in the pure water ultrasonic cleaning 10 minutes after three road grooves clean, put into electronic-grade alcohol ultra-sonic dehydration then 8 minutes, wafer surface water mark is removed in oven dry at last, and the water yield in the described three road rinse baths accounts for the volume of three road rinse baths 3/4; Described pure water, electronic-grade alcohol account for the volume of place ultrasonic wave 2/4;
Embodiment 2
The processing step of frequency corrosion of wafers method: comprise following processing step:
One, the configuration of corrosive fluid: F〉the ammonium bifluoride aqueous solution (electronic-grade) during 30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 65 ± 2 ℃ of temperature;
The ammonium bifluoride aqueous solution (electronic-grade) during 16MHz≤F＜30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 50 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during F＜8MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 2:1, the mixed solution 17L after preparing is put in the etching tank, 78 ± 2 ℃ of temperature;
Ammonium bifluoride solids constituent minor: NH4HF2 during 16MHz＜F≤30MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 1:1.5, the mixed solution 17L after preparing is put in the etching tank, 60 ± 2 ℃ of temperature;
Two, corrosion quantity: F≤17MHz1000 sheet/basket, F〉the 17MHz1500/ basket; F in the formula is a frequency; The specification of wafer, totally 4 baskets;
Three, moved up and down by the etching tank vibrating grid of buncher control: 1 time/second (wafer model HC-49U/S);
Four, from will taking a sample test 20 of wafers the corrosive wafer at random, and with this frequency of 20 (19008,19031,19064,19099,19046,19004,19078,19078,19044,19002,19058,19072,19055,19047,19082,19001,19005,19089,19021,19068) (unit: KHZ) be recorded in the computer archives, 5 that get its medium frequency maximum are carried out the corrosion first time, and etching time (800S) after carrying out corrosion for the first time and frequency record are in the computer archives, and frequency is that the processing parameter of 19.2M is 19215～19350～19485 (units: KHZ).With the first time corrosive target value be that the central value (19350) of processing parameter adds that the maximum value (19485) of processing parameter is divided by 2, calculate the corrosive target value and be input in the computer archives, the etching time of this batch wafers calculates (887S) automatically by computer.；
Five, start etching machine, treat that wafer erodes to the etching time of regulation, 4 basket wafers are brought out, put into water temperature and clean at three road rinse baths of 80-100 degree, every a groove scavenging period 15 minutes was placed in the pure water ultrasonic cleaning 15 minutes after three road grooves clean, put into electronic-grade alcohol ultra-sonic dehydration then 10 minutes, oven dry is removed wafer surface water mark, the ultra-sonic dehydration of throwing of described electronic-grade alcohol at last
The water yield in the described three road rinse baths accounts for the volume of three road rinse baths 3/4; Described pure water, electronic-grade alcohol account for the volume of place ultrasonic wave 2/4;
Turn on the power switch during corrosion and make etching machine connect power supply, opening the buncher that drives the etching tank transmission rod then moves up and down transmission rod, be placed in the wafer basket preparing the corrosive wafer, putting back wafer basket well is put on the anchor on the transmission rod, make to shake up and down in the corrosive fluid of wafer in etching tank and corrode, till the target frequency of wafer is arrived in corruption.Corrode and open the buncher that drives the rinse bath transmission rod when wafer cleans, transmission rod is moved up and down, the wafer basket that erodes to target frequency is put on the anchor of rinse bath transmission rod wafer is shaken respectively in three road rinse bath mobile hot water up and down to clean, till the cleaning surfaces of wafer.
Claims (8)
1, a kind of method that is used for frequency corrosion of wafers is characterized in that this method comprises following processing step:
One, the configuration of corrosive fluid:
F〉the ammonium bifluoride aqueous solution (electronic-grade) during 30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density is 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 65 ± 2 ℃ of temperature;
Two, corrosion quantity: F≤17MHz1000～2000 slice/basket, F〉17MHz1500～2000/ basket; F in the formula is a frequency; The specification of wafer, totally 4 baskets;
Three, be subjected to the etching tank vibrating grid of electric machine control, under the control of motor, move up and down: 1～1.5 time/second (wafer model HC-49U/S);
Four, from taking a sample test 20 of wafers the corrosive wafer at random, and with this frequency record of 20 in the computer archives, 5 that get its medium frequency maximum are carried out the corrosion first time, should be in the computer archives before carrying out corrosion for the first time with time of setting and frequency record, with the first time corrosive target value be the average frequency value in above-mentioned 20 add the maximum in above-mentioned 20 frequency values divided by 2, the etching time of this batch wafers is calculated automatically by computer;
Five, start etching machine, treat that wafer erodes to the specified time, 4 basket wafers are brought out, putting into water temperature cleans at three road rinse baths of 80-100 degree, every a groove scavenging period 10～15 minutes was placed in the pure water ultrasonic cleaning 10～15 minutes after three road grooves clean, put into electronic-grade alcohol ultra-sonic dehydration then 8～10 minutes, wafer surface water mark is removed in oven dry at last.
2, a kind of method that is used for frequency corrosion of wafers according to claim 1, the configuration processing step one that it is characterized in that described corrosive fluid, the ammonium bifluoride aqueous solution (electronic-grade) during 16MHz≤F＜30MHz, molecular formula: NH4HF2, molecular weight: 57.04, content 33% ± 1%, density are 1.09～1.10g/ml; The 17L ammonium bifluoride aqueous solution is put in the etching tank, 50 ± 2 ℃ of temperature.
3, a kind of method that is used for frequency corrosion of wafers according to claim 1, the configuration processing step one that it is characterized in that described corrosive fluid, ammonium bifluoride solids constituent minor: NH4HF2 during F＜8MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 2:1, mixed solution 17L after preparing is put in the etching tank, 78 ± 2 ℃ of temperature.
4, a kind of method that is used for frequency corrosion of wafers according to claim 1, the configuration processing step one that it is characterized in that described corrosive fluid, ammonium bifluoride solids constituent minor: NH4HF2 during 16MHz＜F≤30MHz, molecular weight: 57.04, ammonium bifluoride: water (weight ratio)=: 1:1.5, mixed solution 17L after preparing is put in the etching tank, 60 ± 2 ℃ of temperature.
5, a kind of method that is used for frequency corrosion of wafers according to claim 1 is characterized in that the configuration processing step five of described corrosive fluid, and the water yield in the described three road rinse baths accounts for the volume of three road rinse baths 3/4; Described pure water, electronic-grade alcohol account for the volume of place ultrasonic wave 2/4.
6, the equipment that is used for frequency corrosion of wafers is characterized in that being provided with etching tank in frame, etching tank is close to three road rinse baths, separates with dividing plate between three road rinse baths and etching tank, between three road rinse baths dividing plate is arranged, and the bottom of three road rinse baths communicates; A transmission rod is respectively arranged in three road rinse baths and the etching tank, the etching tank vibrating grid is arranged on the transmission rod, hold the wafer basket and be placed on this vibrating grid; Described etching tank is with the interlayer that discharges water outward.
7, the equipment that is used for frequency corrosion of wafers according to claim 6 is characterized in that the height between two dividing plates in the described three road rinse baths is different.
8, the equipment that is used for frequency corrosion of wafers according to claim 6 is characterized in that there is a common extractor fan top of described etching tank and rinse bath.
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| CN200910025830A CN101532180A (en) | 2009-03-11 | 2009-03-11 | Method for frequency corrosion of wafers and equipment thereof |
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| CN200910025830A CN101532180A (en) | 2009-03-11 | 2009-03-11 | Method for frequency corrosion of wafers and equipment thereof |
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| CN101886263A (en) * | 2010-07-15 | 2010-11-17 | 菲特晶(南京)电子有限公司 | Blowing corrosion machine and method for corrosion and cleaning |
| CN102485977A (en) * | 2010-12-02 | 2012-06-06 | 有研半导体材料股份有限公司 | Etching-cleaning machine for large-diameter single crystal dislocation |
| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN104342757A (en) * | 2013-07-25 | 2015-02-11 | 北京大学 | Cylinder design capable of stably adopting BOE to etch SiO2 |
| CN104562008A (en) * | 2014-12-03 | 2015-04-29 | 广西大学 | Vibrating etching tank |
| CN106087066A (en) * | 2016-06-15 | 2016-11-09 | 廊坊中电熊猫晶体科技有限公司 | A kind of method improving quartz crystal slice surface roughness |
| CN109371456A (en) * | 2018-10-17 | 2019-02-22 | 山东博达光电有限公司 | The corrosion device and caustic solution of synthetic quartzcrystal seed wafer |
| CN110514578A (en) * | 2019-09-29 | 2019-11-29 | 江苏金恒信息科技股份有限公司 | A kind of automatictesting system of etching pit |
| CN111733458A (en) * | 2020-07-30 | 2020-10-02 | 中国电子科技集团公司第十三研究所 | Swinging type seed crystal surface corrosion, cleaning and drying device and process method |
| CN113957542A (en) * | 2021-11-16 | 2022-01-21 | 湖南科鑫泰电子有限公司 | Corrosion machine with automatic cup pouring function |
| CN115261994A (en) * | 2022-07-22 | 2022-11-01 | 珠海东锦石英科技有限公司 | Wafer corrosion cleaning equipment and process thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101886263B (en) * | 2010-07-15 | 2012-07-04 | 菲特晶(南京)电子有限公司 | Blowing corrosion machine and method for corrosion and cleaning |
| CN101886263A (en) * | 2010-07-15 | 2010-11-17 | 菲特晶(南京)电子有限公司 | Blowing corrosion machine and method for corrosion and cleaning |
| CN102485977A (en) * | 2010-12-02 | 2012-06-06 | 有研半导体材料股份有限公司 | Etching-cleaning machine for large-diameter single crystal dislocation |
| CN102485977B (en) * | 2010-12-02 | 2015-08-12 | 有研新材料股份有限公司 | A kind of etching-cleaning machine for major diameter single crystal dislocation |
| CN103192313B (en) * | 2013-04-18 | 2015-05-20 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN104342757B (en) * | 2013-07-25 | 2016-10-05 | 北京大学 | One stably uses BOE corrosion SiO2cylinder body |
| CN104342757A (en) * | 2013-07-25 | 2015-02-11 | 北京大学 | Cylinder design capable of stably adopting BOE to etch SiO2 |
| CN104562008A (en) * | 2014-12-03 | 2015-04-29 | 广西大学 | Vibrating etching tank |
| CN106087066A (en) * | 2016-06-15 | 2016-11-09 | 廊坊中电熊猫晶体科技有限公司 | A kind of method improving quartz crystal slice surface roughness |
| CN109371456A (en) * | 2018-10-17 | 2019-02-22 | 山东博达光电有限公司 | The corrosion device and caustic solution of synthetic quartzcrystal seed wafer |
| CN110514578A (en) * | 2019-09-29 | 2019-11-29 | 江苏金恒信息科技股份有限公司 | A kind of automatictesting system of etching pit |
| CN111733458A (en) * | 2020-07-30 | 2020-10-02 | 中国电子科技集团公司第十三研究所 | Swinging type seed crystal surface corrosion, cleaning and drying device and process method |
| CN113957542A (en) * | 2021-11-16 | 2022-01-21 | 湖南科鑫泰电子有限公司 | Corrosion machine with automatic cup pouring function |
| CN115261994A (en) * | 2022-07-22 | 2022-11-01 | 珠海东锦石英科技有限公司 | Wafer corrosion cleaning equipment and process thereof |
| CN115261994B (en) * | 2022-07-22 | 2024-04-05 | 珠海东锦石英科技有限公司 | Wafer corrosion cleaning equipment and process thereof |
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Open date: 20090916 |