CN115261994B - Wafer corrosion cleaning equipment and process thereof - Google Patents
Wafer corrosion cleaning equipment and process thereof Download PDFInfo
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- CN115261994B CN115261994B CN202210870022.8A CN202210870022A CN115261994B CN 115261994 B CN115261994 B CN 115261994B CN 202210870022 A CN202210870022 A CN 202210870022A CN 115261994 B CN115261994 B CN 115261994B
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- 238000005260 corrosion Methods 0.000 title claims abstract description 95
- 230000007797 corrosion Effects 0.000 title claims abstract description 94
- 238000004140 cleaning Methods 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000008569 process Effects 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 68
- 238000001914 filtration Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 31
- 238000009434 installation Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 210000005056 cell body Anatomy 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000012797 qualification Methods 0.000 abstract description 5
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 238000011086 high cleaning Methods 0.000 abstract description 2
- 230000002277 temperature effect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- -1 hydrogen fluoride amine Chemical class 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides the wafer corrosion cleaning equipment and the process thereof, which have good constant temperature effect on the temperature of the quartz wafer corrosive liquid, uniform and stable corrosion action and high cleaning cleanliness, thereby improving the corrosion production efficiency and the qualification rate and reducing the frequency dispersion difference of the wafer. Including the box, set up the controlling means on the box, be provided with on the box all with controlling means electric connection join in marriage liquid module, corrosion pool and wash the pond, join in marriage liquid module and include low concentration cell body, high concentration cell body and circulation filtration, circulation filtration sets up on the box outer wall and is linked together with low concentration cell body and high concentration cell body through the pipeline, utilize to join in marriage the proportion of liquid module metering corrosion solution accurately, utilize frequency to select separately and carry out corrosion cleaning treatment with the brand-new technological process of secondary corruption. The invention is used in the technical field of wafer processing and production.
Description
Technical Field
The invention relates to the technical field of wafer processing and production, in particular to wafer corrosion cleaning equipment and a wafer corrosion cleaning process.
Background
In the production process of quartz crystals in the quartz resonator, after the quartz crystals are subjected to the procedures of cutting, grinding, cutting off, sizing and the like, a damage layer with a certain thickness is generated on the surface of the quartz crystals, and the damage layer can increase the loss of the energy of the quartz crystal resonator, so that the resonance resistance of the quartz crystal resonator is increased or the frequency change of the quartz crystal resonator in a high-temperature state and a low-temperature state is influenced to cause an unstable phenomenon. After the quartz resonator is manufactured, the problems of frequency drift or unstable electrodes of the quartz resonator and the like can be caused by falling of quartz scraps. Therefore, the quartz wafer must be uniformly etched before the quartz crystal is manufactured to remove the damaged layer, improve the wafer surface state, greatly reduce the electrical performance parameters such as the resistance and the aging rate of the resonator, and improve the production qualification rate of the quartz crystal resonator.
With the increasing market demands for miniaturized wafers, and the increasing demand for 5G ultra-high frequency products; the smaller the product specification volume is, the higher the frequency requirement is, the greater the corrosion difficulty is, the small size of the miniaturized wafer is, and the quality requirement is high; the existing production equipment and processing method are difficult to meet the requirements of quality, the original old corrosion machine is unstable in corrosion liquid temperature, large in frequency dispersion is easy to generate, and the corrosion on the surface of a wafer is uneven; because the corrosion speed and the corrosion time of the corrosion machine are calculated, and the cleaning time after corrosion is mainly controlled by operators, corrosion out-of-tolerance sheets are easy to generate, the whole batch of products is scrapped, and the wafer quality of the products cannot be effectively ensured.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects of the prior art, and provides wafer corrosion cleaning equipment and process capable of achieving the purposes of improving the corrosion production efficiency and the qualification rate and reducing the frequency dispersion difference of wafers, wherein the wafer corrosion cleaning equipment has good temperature constant temperature effect on quartz wafer corrosive liquid, uniform and stable corrosion action and high cleaning cleanliness.
The technical scheme adopted by the invention is as follows: the device comprises a box body and a control device arranged on the box body, wherein a liquid distribution module, an etching tank and a cleaning tank are arranged on the box body and are electrically connected with the control device, the liquid distribution module comprises a low-concentration tank body, a high-concentration tank body and a circulating filtering structure, the circulating filtering structure is arranged on the outer wall of the box body and is communicated with the low-concentration tank body and the high-concentration tank body through a pipeline, the etching tank comprises a high-frequency etching tank and a low-frequency etching tank, the high-frequency etching tank is respectively communicated with the low-concentration tank body and the high-concentration tank body, and the low-frequency etching tank is communicated with the high-concentration tank body, and a shaking structure is arranged in the high-frequency etching tank and the cleaning tank.
Further, the liquid preparation module further comprises two heating pipes, two liquid inlet pipes and two liquid outlet pipes; the two heating pipes are respectively arranged at the lower ends in the low-concentration tank body and the high-concentration tank body, one ends of the two liquid inlet pipes penetrate through one side of the tank body and are respectively positioned at the upper ends of the low-concentration tank body and the high-concentration tank body, and one ends of the liquid outlet pipes are respectively embedded at one sides in the low-concentration tank body and the high-concentration tank body.
Further, the circulating filter structure comprises two water pumps, two mounting sleeves, two filter shells, two baffles, filter materials, two circulating pipes, two three-way valves and a communicating pipe; the two water pumps are all installed in a side wall surface of the box body, liquid inlet ends are connected with one ends of two liquid outlet pipes respectively, one ends of two installation sleeves are connected with two liquid outlet ends of the water pumps respectively, two filter shells are embedded in two lower ends of the installation sleeves respectively, two baffles are installed in two inner centers of the filter shells respectively, filter materials are filled in the two filter shells respectively, one ends of two circulation pipes are connected with the other ends of the two installation sleeves respectively, two three-way valves are connected with two circulation pipes and two liquid inlet pipes respectively at two ends of the three-way valves respectively, and two ends of the communication pipes are connected with two other ends of the three-way valves respectively.
Further, the high-frequency corrosion pool comprises a high-concentration corrosion pool and a low-concentration corrosion pool, the high-concentration corrosion pool and the low-frequency corrosion pool are respectively communicated with the high-concentration tank body through a first circulating pump and a second circulating pump, and the low-concentration corrosion pool is communicated with the low-concentration tank body through a third circulating pump.
Further, the cleaning tank comprises a first cleaning tank, a second cleaning tank and a third cleaning tank which are communicated with each other through a flow pipe, a water injection pipeline is arranged on the third cleaning tank, and a drainage pipeline is arranged on the first cleaning tank.
Further, the high-concentration corrosion pool, the low-frequency corrosion pool, the first cleaning tank, the second cleaning tank and the third cleaning tank are all provided with the shaking structure, and the shaking structure comprises a motor, a rocker connected with the output end of the motor, a cradle connected with the rocker and a wafer fixing device arranged on the cradle.
The invention also comprises a wafer corrosion cleaning process, which comprises the following specific steps:
A. dividing a wafer to be corroded, cleaned and processed into a high frequency band and a low frequency band according to the requirements of products, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group into the low-concentration corrosion pool for soaking and pre-corroding for at least 30min, wherein the corrosion degree of the wafers reaches 70%, and then placing the pre-corroded wafers into the high-concentration corrosion pool for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency corrosion pool for finish corrosion for at least 30min; D. placing the high-frequency band group wafers and the low-frequency band group wafers subjected to corrosion processing into the first cleaning tank, the second cleaning tank and the third cleaning tank in sequence for soaking and cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
Further, in the corrosion solution in the high-concentration corrosion pool and the low-frequency corrosion pool, the ratio of ammonium bifluoride to water is 1:3; in the corrosion solution in the low-concentration corrosion pool, the ratio of ammonium bifluoride to water is 1:4.
Further, when the etching is performed in steps B and C, the stability of the etching solution is controlled at 58.+ -. 1 ℃.
Further, during the process of corroding and cleaning the wafer, the shaking structure is started, and the motor is used for controlling the cradle to throw, and the throwing speed is monitored in real time by the control device.
Compared with the prior art, the invention has the beneficial effects that: the proportion of ammonium bifluoride to water is prepared in advance through the liquid preparation module, two corrosion solutions with low concentration and high concentration are prepared, and the temperature is controlled through the anti-corrosion heating pipe, so that the effect of circulating and filtering the corrosion solution by the filter and filtering impurities in corrosion is improved; by researching and developing the corrosive liquid preparation tank, the concentration ratio of the corrosive liquid is used in a controllable way, the corrosion time is effectively controlled to improve the corrosion efficiency, the prepared corrosive liquid is constant in temperature, the corrosive liquid can be directly used after being added into the corrosive tank in operation without waiting for time, the corrosion production efficiency is improved, the pollution on the surface of a wafer is reduced by filtering impurities in the corrosive liquid, and the product percent of pass is improved; the wafer to be etched is subjected to frequency sorting and twice etching treatment, so that the wafer etching process flow is optimized, the production efficiency is improved, and the qualification rate of products is greatly improved; in addition, because water always flows circularly in the whole cleaning process, the cleanest water always used in the last cleaning process, namely the third cleaning tank, is ensured, and compared with the traditional cleaning process, the cleaning cleanliness is more advantageous in terms of periodic water changing.
Drawings
FIG. 1 is a schematic top view of the present invention;
FIG. 2 is a schematic diagram of the structure of the liquid preparation module;
FIG. 3 is a rear view of the dispensing module;
fig. 4 is a schematic view of the rocking structure.
Detailed Description
As shown in fig. 1, fig. 2, fig. 3 and fig. 4, the box 1, the control device 2 that sets up on the box 1 be provided with on the box 1 all with the join in marriage liquid module, the corruption pond and the washing pond of controlling device 2 electric connection, join in marriage liquid module including low concentration cell body 3, high concentration cell body 4 and circulation filtration, circulation filtration set up in on the box 1 outer wall and through the pipeline with low concentration cell body 3 with high concentration cell body 4 is linked together, the corruption pond includes high frequency corruption pond and low frequency corruption pond 5, the high frequency corruption pond respectively with low concentration cell body 3 with high concentration cell body 4 is linked together, low frequency corruption pond 5 with high concentration cell body 4 all be provided with in the corruption pond of high frequency, low frequency corrosion pond 5 and the washing pond shake the structure. The liquid preparation module further comprises two heating pipes 6, two liquid inlet pipes 7 and two liquid outlet pipes 8; the two heating pipes 6 are respectively arranged at the inner lower ends of the low-concentration tank body 3 and the high-concentration tank body 4, one ends of the two liquid inlet pipes 7 penetrate through one side of the tank body 1 and are respectively positioned at the upper ends of the low-concentration tank body 3 and the high-concentration tank body 4, and one ends of the two liquid outlet pipes 8 are respectively embedded at one sides of the low-concentration tank body 3 and the high-concentration tank body 4. In this embodiment, the control device 2 is provided with a temperature controller, a frequency converter, a control switch and a timer.
When the device is used, the proportion of the hydrogen fluoride amine to the water is measured, the pure water pipe is directly pulled to the upper parts of the low-concentration tank body 3 and the high-concentration tank body 4, and the valve is opened to drain water to the required scale mark; the water levels of the low-concentration tank body 3 and the high-concentration tank body 4 reach the requirement, the two heating pipes 6 work, the temperature is set to be 58+/-1 ℃, the two heating pipes 6 heat the liquid in the low-concentration tank body 3 and the high-concentration tank body 4, and when the temperature reaches the requirement, the solid hydrogen fluoride amine which is ready to be metered is added and stirred; after dissolution of the hydrogen fluoride amine, the circulating filter structure is opened, so that corrosive liquid of the hydrogen fluoride amine is circularly filtered through the two liquid inlet pipes 7, the two liquid outlet pipes 8 and the circulating filter structure; after the temperature of the corrosive liquid is constant and stable, the corrosive liquid can be used, and the temperature in the corrosive liquid tank is monitored on line in real time; the concentration ratio of the corrosive liquid.
In the present embodiment, the circulating filter structure includes two water pumps 9, two installation sleeves 10, two filter housings 11, two baffles 12, a filter medium 13, two circulating pipes 14, two three-way valves 15, and a communicating pipe 16; the two water pumps 9 are all installed on a side wall surface of the box body 1, liquid inlet ends are respectively connected with one ends of two liquid outlet pipes 8, one ends of two installation sleeves 10 are respectively connected with the liquid outlet ends of the two water pumps 9, two filter shells 11 are respectively embedded in the lower ends of the two installation sleeves 10, two baffles 12 are respectively installed in the center of the two filter shells 11, filter materials 13 are respectively filled in the two filter shells 11, one ends of two circulating pipes 14 are respectively connected with the other ends of the two installation sleeves 10, two ends of two three-way valves 15 are respectively connected with the two circulating pipes 14 and the two liquid inlet pipes 7, and two ends of each communicating pipe 16 are respectively connected with the other ends of the two three-way valves 15. In the invention, a through hole 30 is formed at the lower end of the baffle 12, and a supporting plate 31 is arranged at the joint of the water pump 9 and the box body 1.
When the filter is used, two water pumps 9 are driven by staff to work, liquid in the low-concentration tank body 3 and the high-concentration tank body 4 is conveyed into two filter shells 11 through two liquid outlet pipes 8, liquid in the low-concentration tank body 3 and the high-concentration tank body 4 is filtered through filter media 13 in the two filter shells 11, the flowing distance of the liquid in the two filter shells 11 is increased through the two baffles 12, the filtering effect is increased, the filtered liquid is conveyed into the two liquid inlet pipes 7 through the two circulating pipes 14, the filtered liquid is conveyed into the low-concentration tank body 3 and the high-concentration tank body 4 again through the two liquid inlet pipes 7, the purpose of circulating filtration of the liquid is achieved, when the low-concentration tank body 3 is required to be conveyed into the high-concentration tank body 4, the circulating pipes 14 at the low-concentration tank body 3 and the liquid inlet pipes 7 at the high-concentration tank body 4 are in a communicating state through operation of two three-way valves 15, the low-concentration tank body 3 can be conveyed into the high-concentration tank body 4, the purpose of mixing the filtered liquid can be achieved, and the filter media 11 can be only be installed in the filter shells 11 in a mode of being replaced when the filter shells 11 are required to be replaced by adopting the filter media 11, and the filter shells 11 are required to be replaced when the filter shells 11 are installed.
In the present embodiment, the high-frequency etching bath includes a high-concentration etching bath 17 and a low-concentration etching bath 18, the high-concentration etching bath 17 and the low-frequency etching bath 5 are respectively communicated with the high-concentration bath body 4 through a first circulation pump 19 and a second circulation pump 20, and the low-concentration etching bath 18 is communicated with the low-concentration bath body 3 through a third circulation pump 21.
The cleaning tank comprises a first cleaning tank 23, a second cleaning tank 24 and a third cleaning tank 25 which are mutually communicated through a runner pipe 22, a water injection pipeline is arranged on the third cleaning tank 25, and a drainage pipeline is arranged on the first cleaning tank 23. The high-concentration etching tank 17, the low-concentration etching tank 18, the low-frequency etching tank 5, the first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 are all provided with the shaking structure, which comprises a motor 26, a rocker 27 connected with the output end of the motor 26, a cradle 28 connected with the rocker 27 and a wafer fixing device 29 arranged on the cradle 28.
The invention also discloses a wafer corrosion cleaning process, which comprises the following specific steps:
A. dividing a wafer to be corroded, cleaned and processed into a high frequency band and a low frequency band according to the requirements of products, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group into the low-concentration corrosion pool 18 for soaking and pre-corrosion for at least 30min, wherein the corrosion degree of the wafers reaches 70%, and then placing the pre-corroded wafers into the high-concentration corrosion pool 17 for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency etching tank 5 for fine etching for at least 30min;
D. placing the high-frequency band group wafer and the low-frequency band group wafer which are subjected to corrosion processing into the first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 in sequence for soaking cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
In the process, the concentration of the corrosive liquid is divided into two different proportions according to the frequency of the wafer, and the low frequency range is: f is less than or equal to 16.000MHz NH4HF 2 ：H 2 O＝1：3
High frequency band: f > 16.000MHz NH4HF 2 ：H 2 O＝1：4
Namely, the ratio of the corrosive liquid in the high-concentration tank body 4 is NH4HF 2 ：H 2 O=1: 3, a step of; the ratio of corrosive liquid in the low-concentration tank body 3 is NH4HF 2 ：H 2 O＝1：4。
During the etching and cleaning of the wafer, the shaking structure is started and the motor 26 controls the cradle 28 to throw, and the throwing speed is monitored by the control device 2 in real time.
The first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 are respectively provided with a water baffle, the water baffle is arranged at the other end in the tank body corresponding to the cradle rack 28, the height of the water baffle is lower than that of the tank body, a water injection pipeline arranged in the third cleaning tank 25 is connected with an external water pipe, a water discharge pipeline arranged in the first cleaning tank 23 is connected with an external water storage tank, when cleaning is started, the water injection pipeline starts to inject clean water into the third cleaning tank 25 under the control of the control device 2, the water flow direction is designed by utilizing the principle of the water height difference, namely, the three cleaning tanks connected through the runner pipe 22 form a high-low level difference, and the water flows from the third cleaning tank 25, the second cleaning tank 24 and the first cleaning tank 23 in sequence to realize overflow circulation, so that the final first cleaning procedure, namely, the third cleaning tank 25 uses water cleaned by a nozzle, and stains after cleaning can be discharged in the first cleaning tank 23 through the water discharge pipeline.
After the equipment and the process are used for carrying out wafer corrosion cleaning treatment, the once qualification rate of wafers reaches more than 95 percent, the wafer frequency discrete value is 3225/24MHz for example, the wafer after being corroded by the equipment and the process has a scattered value of 200KHz, and the production efficiency is improved by more than 20 percent.
Finally, it should be emphasized that the foregoing description is merely illustrative of the preferred embodiments of the invention, and that various changes and modifications can be made by those skilled in the art without departing from the spirit and principles of the invention, and any such modifications, equivalents, improvements, etc. are intended to be included within the scope of the invention.
Claims (5)
1. The wafer corrosion cleaning process comprises a box body (1) and a control device (2) arranged on the box body (1), wherein a liquid distribution module, a corrosion tank and a cleaning tank which are all electrically connected with the control device (2) are arranged on the box body (1), the liquid distribution module comprises a low-concentration tank body (3), a high-concentration tank body (4) and a circulating filtering structure, the circulating filtering structure is arranged on the outer wall of the box body (1) and is communicated with the low-concentration tank body (3) and the high-concentration tank body (4) through pipelines, the corrosion tank comprises a high-frequency corrosion tank and a low-frequency corrosion tank (5), the high-frequency corrosion tank is respectively communicated with the low-concentration tank body (3) and the high-concentration tank body (4), and the low-frequency corrosion tank (5) is communicated with the high-concentration tank body (4) and shaking structures are arranged in the high-frequency corrosion tank, the low-frequency corrosion tank (5) and the cleaning tank; the liquid preparation module further comprises two heating pipes (6), two liquid inlet pipes (7) and two liquid outlet pipes (8); the two heating pipes (6) are respectively arranged at the inner lower ends of the low-concentration tank body (3) and the high-concentration tank body (4), one ends of the two liquid inlet pipes (7) penetrate through one side of the tank body (1) and are respectively positioned at the upper ends of the low-concentration tank body (3) and the high-concentration tank body (4), and one ends of the two liquid outlet pipes (8) are respectively embedded at one sides of the low-concentration tank body (3) and the high-concentration tank body (4); the circulating filter structure comprises two water pumps (9), two mounting sleeves (10), two filter shells (11), two baffles (12), filter materials (13), two circulating pipes (14), two three-way valves (15) and a communicating pipe (16); the two water pumps (9) are all installed at one side wall surface of the box body (1), liquid inlet ends are respectively connected with one ends of two liquid outlet pipes (8), one ends of two installation sleeves (10) are respectively connected with the liquid outlet ends of the two water pumps (9), two filter shells (11) are respectively embedded at the lower ends of the two installation sleeves (10), two baffles (12) are respectively installed at the inner center of the two filter shells (11), filter materials (13) are respectively filled in the two filter shells (11), one ends of two circulating pipes (14) are respectively connected with the other ends of the two installation sleeves (10), two ends of two three-way valves (15) are respectively connected with the two circulating pipes (14) and the two liquid inlet pipes (7), and two ends of a communicating pipe (16) are respectively connected with the other ends of the two three-way valves (15); the high-frequency corrosion tank comprises a high-concentration corrosion tank (17) and a low-concentration corrosion tank (18), the high-concentration corrosion tank (17) and the low-frequency corrosion tank (5) are respectively communicated with the high-concentration tank body (4) through a first circulating pump (19) and a second circulating pump (20), and the low-concentration corrosion tank (18) is communicated with the low-concentration tank body (3) through a third circulating pump (21); the cleaning tank comprises a first cleaning tank (23), a second cleaning tank (24) and a third cleaning tank (25) which are mutually communicated through a flow pipe (22), a water injection pipeline is arranged on the third cleaning tank (25), and a drainage pipeline is arranged on the first cleaning tank (23);
the wafer etching and cleaning process is characterized in that the wafer etching and cleaning process by the wafer etching and cleaning equipment comprises the following steps:
A. dividing a wafer to be corroded, cleaned and processed into a high frequency band and a low frequency band according to the requirements of products, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group into the low-concentration corrosion pool (18) for soaking and pre-corroding for at least 30min, wherein the corrosion degree of the wafers reaches 70%, and then placing the wafers subjected to pre-corroding into the high-concentration corrosion pool (17) for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency corrosion pool (5) for fine corrosion for at least 30min;
D. placing the high-frequency band group wafers and the low-frequency band group wafers subjected to corrosion processing into the first cleaning tank (23), the second cleaning tank (24) and the third cleaning tank (25) in sequence for soaking cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
2. A wafer etching cleaning process according to claim 1, wherein: the high-concentration corrosion pool (17), the low-concentration corrosion pool (18), the low-frequency corrosion pool (5), the first cleaning tank (23), the second cleaning tank (24) and the third cleaning tank (25) are all provided with the shaking structure, and the shaking structure comprises a motor (26), a rocker (27) connected with the output end of the motor (26), a cradle rack (28) connected with the rocker (27) and a wafer fixing device (29) arranged on the cradle rack (28).
3. A wafer etching cleaning process according to claim 1, wherein: in the corrosion solution in the high-concentration corrosion pool (17) and the low-frequency corrosion pool (5), the ratio of ammonium bifluoride to water is 1:3; in the corrosion solution in the low-concentration corrosion pool (18), the ratio of ammonium bifluoride to water is 1:4.
4. A wafer etching cleaning process according to claim 1, wherein: and (3) during the corrosion in the steps B and C, the stability of the corrosion solution is controlled at 58+/-1 ℃.
5. A wafer etching cleaning process according to claim 2, wherein: during the etching and cleaning process of the wafer, the shaking structure is started, and the motor (26) is used for controlling the cradle frame (28) to throw, and the throwing speed is monitored by the control device (2) in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870022.8A CN115261994B (en) | 2022-07-22 | 2022-07-22 | Wafer corrosion cleaning equipment and process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870022.8A CN115261994B (en) | 2022-07-22 | 2022-07-22 | Wafer corrosion cleaning equipment and process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115261994A CN115261994A (en) | 2022-11-01 |
| CN115261994B true CN115261994B (en) | 2024-04-05 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995011548A1 (en) * | 1993-10-18 | 1995-04-27 | Seiko Epson Corporation | Rectangular at-cut quartz crystal plate, quartz crystal unit, and quartz oscillator and manufacture of quartz crystal plate |
| CN101532180A (en) * | 2009-03-11 | 2009-09-16 | 南京德研电子有限公司 | Method for frequency corrosion of wafers and equipment thereof |
| CN201990731U (en) * | 2011-01-17 | 2011-09-28 | 江阴市江海光伏科技有限公司 | Chip frequency corrosion and cleaning device |
| CN112111790A (en) * | 2020-09-21 | 2020-12-22 | 北京石晶光电科技股份有限公司 | Artificial wafer corrosion cleaning process |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995011548A1 (en) * | 1993-10-18 | 1995-04-27 | Seiko Epson Corporation | Rectangular at-cut quartz crystal plate, quartz crystal unit, and quartz oscillator and manufacture of quartz crystal plate |
| CN101532180A (en) * | 2009-03-11 | 2009-09-16 | 南京德研电子有限公司 | Method for frequency corrosion of wafers and equipment thereof |
| CN201990731U (en) * | 2011-01-17 | 2011-09-28 | 江阴市江海光伏科技有限公司 | Chip frequency corrosion and cleaning device |
| CN112111790A (en) * | 2020-09-21 | 2020-12-22 | 北京石晶光电科技股份有限公司 | Artificial wafer corrosion cleaning process |
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