CN115261994A - Wafer corrosion cleaning equipment and process thereof - Google Patents
Wafer corrosion cleaning equipment and process thereof Download PDFInfo
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- CN115261994A CN115261994A CN202210870022.8A CN202210870022A CN115261994A CN 115261994 A CN115261994 A CN 115261994A CN 202210870022 A CN202210870022 A CN 202210870022A CN 115261994 A CN115261994 A CN 115261994A
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- 238000005260 corrosion Methods 0.000 title claims abstract description 92
- 230000007797 corrosion Effects 0.000 title claims abstract description 91
- 238000004140 cleaning Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008569 process Effects 0.000 title claims abstract description 26
- 235000012431 wafers Nutrition 0.000 claims abstract description 72
- 210000005056 cell body Anatomy 0.000 claims abstract description 57
- 239000007788 liquid Substances 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 31
- 238000005406 washing Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 41
- 238000001914 filtration Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000006185 dispersion Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 238000012797 qualification Methods 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 9
- 229910017665 NH4HF2 Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The wafer etching and cleaning equipment and the process thereof provided by the invention have the advantages that the temperature constant effect on the quartz wafer etching solution is good, the etching action is uniform and stable, and the cleaning cleanliness is high, so that the etching production efficiency and the qualification rate are improved, and the frequency dispersion difference of wafers is reduced. Including the box, the controlling means of setting on the box, be provided with all with controlling means electric connection join in marriage the liquid module on the box, corrode the pond and wash the pond, it includes the low concentration cell body to join in marriage the liquid module, high concentration cell body and loop filter structure, loop filter structure sets up on the box outer wall and is linked together through pipeline and low concentration cell body and high concentration cell body, the proportion of liquid module accurate measurement corrosive liquid is joined in marriage in the utilization, utilize the frequency to select separately and corrode the washing processing with the brand-new process flow of secondary corrosion. The invention is used in the technical field of wafer processing production.
Description
Technical Field
The invention relates to the technical field of wafer processing and production, in particular to wafer corrosion cleaning equipment and a wafer corrosion cleaning process.
Background
In the production process of the quartz crystal in the quartz resonator, after the quartz crystal is subjected to cutting, grinding, cutting, size trimming and other processes, a damage layer with a certain thickness is generated on the surface of the quartz crystal, and the damage layer can increase the loss of the kinetic energy of the quartz crystal resonator, so that the resonance resistance of the quartz crystal resonator is increased or the frequency change of the quartz crystal resonator in high and low temperature states is influenced to cause an unstable phenomenon. After the quartz resonator is manufactured, the frequency drift or the electrode infirm of the quartz resonator can be caused by the falling of quartz debris. Therefore, before the quartz crystal is manufactured, the quartz crystal wafer is required to be subjected to uniform corrosion processing to remove a damaged layer and improve the surface state of the wafer, so that electrical performance parameters such as the resistance and the aging rate of the resonator are greatly reduced, and the production yield of the quartz crystal resonator is improved.
With the increasing demand of the market for miniaturized wafers and the gradual demand of 5G ultrahigh frequency products; the smaller the product specification volume is, the higher the frequency requirement is, the larger the corrosion difficulty is, the smaller the miniaturized wafer size is, and the high quality requirement is; the existing production equipment and processing method are difficult to meet the quality requirement, the original old etching machine is used for processing, the temperature of etching liquid is unstable, the frequency dispersion is easy to generate, and the surface of a wafer is not uniformly etched; because the corrosion speed and the corrosion time calculation of the corrosion machine and the cleaning time after corrosion are mainly controlled by operators, the corrosion out-of-tolerance wafer is easy to generate, the whole batch of products is scrapped, and the quality of the wafer can not be effectively ensured.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides the wafer etching cleaning equipment and the process thereof, which can realize good temperature constant effect on quartz wafer etching solution, uniform and stable etching action and high cleaning cleanliness, thereby improving the etching production efficiency and the qualification rate and reducing the frequency dispersion difference of wafers.
The technical scheme adopted by the invention is as follows: it includes the box, sets up controlling means on the box be provided with on the box all with controlling means electric connection join in marriage liquid module, corrode the pond and wash the pond, join in marriage the liquid module and include low concentration cell body, high concentration cell body and circulation filtration structure, circulation filtration structure set up in on the box outer wall and through the pipeline with the low concentration cell body with high concentration cell body is linked together, it includes high-frequency corrosion pond and low-frequency corrosion pond to corrode the pond, high-frequency corrosion pond respectively with the low concentration cell body with high concentration cell body is linked together, the low-frequency corrosion pond with high concentration cell body is linked together the high-frequency corrosion pond the low-frequency corrosion pond and all be provided with in the washing pond and wave the structure.
Furthermore, the liquid distribution module also comprises two heating pipes, two liquid inlet pipes and two liquid outlet pipes; two the heating pipe is installed respectively in low concentration cell body and the internal lower extreme of high concentration cell body, two feed liquor pipe one end all run through in box one side, and be located respectively low concentration cell body and high concentration cell body upper end, two drain pipe one end inlay respectively in one side in low concentration cell body and the high concentration cell body.
Furthermore, the circulating and filtering structure comprises two water pumps, two mounting sleeves, two filtering shells, two baffles, a filtering material, two circulating pipes, two three-way valves and a communicating pipe; two the water pump all install in box side wall department, and the feed liquor end respectively with two drain pipe one end is connected, two installation sleeve one end respectively with two the water pump goes out the liquid end and connects, two it inlays respectively to inlay and adorns in two to filter the casing installation sleeve lower extreme, two the baffle is installed respectively in two filter the internal center department of casing, the filter media is filled respectively in two in the filter casing, two circulation pipe one end respectively with two the installation sleeve other end is connected, two three-way valve wherein both ends respectively with two the circulation pipe and two feed liquor union couplings, the communicating pipe both ends respectively with two the three-way valve other end is connected.
Further, the high frequency corrodes the pond and includes that the high concentration corrodes pond and low concentration corrodes the pond, the high concentration corrodes the pond with the low frequency corrodes the pond respectively through first circulating pump and second circulating pump with the high concentration cell body is linked together, the low concentration corrodes the pond through the third circulating pump with the low concentration cell body is linked together.
Further, the washing pond includes and is linked together first washing tank, second washing tank and third washing tank through the runner pipe each other be provided with the water injection pipeline on the third washing tank, be provided with drainage pipe on the first washing tank.
Furthermore, the rocking structures are arranged on the high-concentration corrosion tank, the low-frequency corrosion tank, the first cleaning tank, the second cleaning tank and the third cleaning tank, and each rocking structure comprises a motor, a rocker connected with the output end of the motor, a cradle frame connected with the rocker and a wafer fixing device arranged on the cradle frame.
The invention also comprises a wafer corrosion cleaning process, which comprises the following specific steps:
A. according to the demand of the product, the wafer to be corroded, cleaned and processed is divided into two groups, namely a high frequency band and a low frequency band, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group in the low-concentration corrosion tank for soaking for at least 30min for pre-corrosion, wherein the corrosion degree of the wafers reaches 70%, and then placing the pre-corroded wafers in the high-concentration corrosion tank for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency corrosion tank for fine corrosion for at least 30min; D. sequentially placing the high-frequency group wafer and the low-frequency group wafer which are subjected to corrosion processing into the first cleaning tank, the second cleaning tank and the third cleaning tank for soaking and cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
Further, in the etching solution in the high-concentration etching tank and the low-frequency etching tank, the ratio of ammonium bifluoride to water is 1; in the etching solution in the low-concentration etching tank, the ratio of ammonium bifluoride to water is 1.
Further, when etching is performed in steps B and C, the stability of the etching solution is controlled at 58. + -. 1 ℃.
Further, during the process of etching and cleaning the wafer, the shaking structure is started, the motor is used for controlling the cradle frame to throw, and the throwing speed is monitored by the control device in real time.
Compared with the prior art, the invention has the beneficial effects that: the proportion of ammonium bifluoride and water is prepared in advance through the liquid preparation module, two corrosion solutions with low concentration and high concentration are prepared, and the temperature is controlled through the anti-corrosion heating pipe, so that the effect of filtering impurities in corrosion by circularly filtering the corrosion solution through the filter is improved; through researching and developing the corrosive liquid preparation tank, the concentration ratio of the corrosive liquid is used in a controllable manner, the corrosion efficiency is improved by effectively controlling the corrosion time, the prepared corrosive liquid has constant temperature, the corrosive liquid can be directly used by being added into the corrosion tank in operation, the waiting time is not needed, the corrosion production efficiency is improved, the surface pollution of a wafer is reduced by filtering impurities in the corrosive liquid, and the product percent of pass is improved; the processing mode of carrying out primary frequency sorting and secondary corrosion on the wafer to be corroded is adopted, so that the technological process of wafer corrosion is optimized, the production efficiency is improved, and the qualification rate of products is greatly improved; in addition, because water always flows circularly in the whole cleaning process, the cleanest water is always used for the last cleaning, namely the cleaning of the third cleaning tank, and the method has more advantages in the aspect of cleaning cleanliness compared with the traditional cleaning method that water is periodically changed.
Drawings
FIG. 1 is a schematic top view of the present invention;
FIG. 2 is a schematic structural view of the liquid preparation module;
FIG. 3 is a rear view of the dispensing module;
fig. 4 is a schematic view of the rocking structure.
Detailed Description
As shown in fig. 1, fig. 2, fig. 3 and fig. 4, box 1, setting are in controlling means 2 on the box 1 be provided with all with controlling means 2 electric connection join in marriage liquid module, corruption pond and washing pond on the box 1, join in marriage the liquid module and include low concentration cell body 3, high concentration cell body 4 and circulation filtration structure, circulation filtration structure set up in on the box 1 outer wall and through the pipeline with low concentration cell body 3 with high concentration cell body 4 is linked together, the corruption pond includes high frequency corrosion pond and low frequency corrosion pond 5, high frequency corrosion pond respectively with low concentration cell body 3 with high concentration cell body 4 is linked together, low frequency corrosion pond 5 with high concentration cell body 4 is linked together high frequency corrosion pond 5 and all be provided with in the washing pond and wave the structure. The liquid distribution module also comprises two heating pipes 6, two liquid inlet pipes 7 and two liquid outlet pipes 8; two lower extreme, two in low concentration cell body 3 and high concentration cell body 4 are installed respectively to heating pipe 6 the one end of feed liquor pipe 7 all run through in 1 one side of box, and be located respectively low concentration cell body 3 and high concentration cell body 4 upper end, two 8 one end of drain pipe inlays respectively in one side in low concentration cell body 3 and the high concentration cell body 4. In this embodiment, the control device 2 is provided with a temperature controller, a frequency converter, a control switch and a timer.
When the device is used, the proportion of the ammonium bifluoride to the water is measured, the pure water pipe is directly pulled to the upper parts of the low-concentration tank body 3 and the high-concentration tank body 4, and the valve is opened to discharge the water to the required scale mark; enabling the water levels of the low-concentration tank body 3 and the high-concentration tank body 4 to meet the requirement, working through the two heating pipes 6, setting the temperature to be 58 +/-1 ℃, heating the liquid in the low-concentration tank body 3 and the liquid in the high-concentration tank body 4 through the two heating pipes 6, and adding solid ammonium hydrogen fluoride to be measured and stirring when the temperature meets the requirement; after the ammonium hydrogen fluoride is dissolved, opening the circulating filter structure to enable corrosive liquid to be circularly filtered through the two liquid inlet pipes 7, the two liquid outlet pipes 8 and the circulating filter structure; the temperature of the corrosive liquid can be used after being constant and stable, and the temperature in the corrosive liquid tank body is monitored online in real time; and (4) concentration proportioning of the corrosive liquid.
In the present embodiment, the circulation filtering structure includes two water pumps 9, two mounting sleeves 10, two filtering shells 11, two baffles 12, a filtering material 13, two circulation pipes 14, two three-way valves 15, and a communication pipe 16; two the water pump 9 all install in 1 side wall department of box, and the inlet end respectively with two 8 one ends of drain pipe are connected, two 10 one end of installation sleeve respectively with two 9 liquid outlet end of water pump are connected, two filter housing 11 inlays respectively and is adorned in two 10 lower extremes of installation sleeve, two baffle 12 is installed respectively in two filter housing 11 inner center department, filter media 13 is filled respectively in two in the filter housing 11, two 14 one end of circulating pipe respectively with two the installation sleeve 10 other end is connected, two 15 wherein both ends of three-way valve respectively with two circulating pipe 14 and two inlet pipe 7 are connected, 16 both ends of communicating pipe respectively with two 15 other ends of three-way valve are connected. In the invention, the lower end of the baffle 12 is provided with a through hole 30, and the joint of the water pump 9 and the box body 1 is provided with a supporting plate 31.
When using, work by two water pumps 9 of staff drive, carry the liquid in low concentration cell body 3 and the high concentration cell body 4 to two filtration casings 11 through two drain pipes 8, filter the liquid in low concentration cell body 3 and the high concentration cell body 4 through two filter medium 13 in the casing 11, through two baffles 12 that set up, increase the flow distance of liquid in two filtration casings 11, increase the filter effect, through filterable liquid, carry to two feed liquor pipes 7 in through two circulating pipes 14, carry the liquid that filters the completion to low concentration cell body 3 and high concentration cell body 4 once more through two feed liquor pipes 7, realize the loop filter's to liquid purpose, when needs carry low concentration cell body 3 to high concentration cell body 4 in, through operating two three-way valves 15, make circulating pipe 14 of low concentration cell body 3 department and the feed liquor pipe 7 of high concentration cell body 4 department be in the connected state, can carry low concentration cell body 3 to high concentration cell body 4 in, realize the mesh to the mixed of liquid, when needs to filter medium 13 in the filtration casing 11 change because the filter medium is installed and is in the lower extreme that the casing 11 can only need be installed to the filtration casing 11 to the filtration casing can be to the installation of the pulling down the casing 11.
In this embodiment, the high-frequency corrosion tank includes a high-concentration corrosion tank 17 and a low-concentration corrosion tank 18, the high-concentration corrosion tank 17 and the low-frequency corrosion tank 5 are respectively communicated with the high-concentration tank 4 through a first circulating pump 19 and a second circulating pump 20, and the low-concentration corrosion tank 18 is communicated with the low-concentration tank 3 through a third circulating pump 21.
The cleaning pool comprises a first cleaning tank 23, a second cleaning tank 24 and a third cleaning tank 25 which are mutually communicated through a circulating pipe 22, a water injection pipeline is arranged on the third cleaning tank 25, and a drainage pipeline is arranged on the first cleaning tank 23. The high-concentration corrosion tank 17, the low-concentration corrosion tank 18, the low-frequency corrosion tank 5, the first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 are all provided with the rocking structure, which comprises a motor 26, a rocker 27 connected with the output end of the motor 26, a cradle frame 28 connected with the rocker 27 and a wafer fixing device 29 arranged on the cradle frame 28.
The invention also discloses a wafer corrosion cleaning process, which comprises the following specific steps:
A. according to the demand of the product, the wafer to be corroded, cleaned and processed is divided into two groups, namely a high frequency band and a low frequency band, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group in the low-concentration corrosion tank 18 for soaking for pre-corrosion for at least 30min, wherein the corrosion degree of the wafers reaches 70%, and then placing the pre-corroded wafers in the high-concentration corrosion tank 17 for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency corrosion tank 5 for fine corrosion for at least 30min;
D. sequentially placing the high-frequency group wafers and the low-frequency group wafers which are subjected to the corrosion processing into the first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 for soaking and cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
In the process, the concentration of the etching solution is divided into two different proportions according to the frequency of the wafer, namely a low-frequency range: f is less than or equal to 16.000MHz NH4HF2：H2 O＝1：3
High frequency band: f > 16.000MHz NH4HF2：H2 O＝1：4
Namely, the ratio of the corrosive liquid in the high-concentration tank 4 is NH4HF2：H2O =1:3; the proportion of the corrosive liquid in the low-concentration tank body 3 is NH4HF2：H2 O＝1：4。
During the etching and cleaning process of the wafer, the shaking structure is started, and the motor 26 controls the cradle 28 to throw, and the throwing speed is monitored by the control device 2 in real time.
The first cleaning tank 23, the second cleaning tank 24 and the third cleaning tank 25 are all provided with a water baffle plate, the water baffle plate is arranged at the other end in the tank body corresponding to the cradle frame 28, the height of the water baffle plate is lower than that of the tank body, a water injection pipeline arranged in the third cleaning tank 25 is connected with an external water pipe, a water drainage pipeline arranged in the first cleaning tank 23 is connected with an external water storage tank, when cleaning is started, the control device 2 controls the water injection pipeline to start to inject clean water into the third cleaning tank 25, the direction of water flow is designed by utilizing the principle of water height difference, namely, the three cleaning tanks connected through the circulating pipe 22 form height difference, and the flowing water flows from the third cleaning tank 25, the second cleaning tank 24 and the first cleaning tank 23 in sequence to realize overflow circulation, so that the last first cleaning process can be ensured, namely, the third cleaning tank 25 uses water cleaned by nozzles, and the cleaned water can also be discharged from the first cleaning tank 23 through the water drainage pipeline.
After the equipment and the process are used for carrying out wafer corrosion cleaning treatment, the one-time pass rate of the wafer reaches more than 95 percent, taking the wafer frequency discrete value as 3225/24MHz as an example, the wafer corroded by the equipment and the process has a dispersion difference value of 200KHz, and the production efficiency is improved by more than 20 percent.
Finally, it should be emphasized that the above-described preferred embodiments of the present invention are merely examples of implementations, rather than limitations, and that many variations and modifications of the invention are possible to those skilled in the art, without departing from the spirit and scope of the invention.
Claims (10)
1. The wafer corrosion cleaning equipment comprises a box body (1) and a control device (2) arranged on the box body (1), and is characterized in that: be provided with on box (1) all with controlling means (2) electric connection join in marriage liquid module, corrode the pond and wash the pond, join in marriage the liquid module and include low concentration cell body (3), high concentration cell body (4) and circulation filtration, circulation filtration set up in on box (1) outer wall and through the pipeline with low concentration cell body (3) with high concentration cell body (4) are linked together, it includes high-frequency corrosion pond and low-frequency corrosion pond (5) to corrode the pond, high-frequency corrosion pond respectively with low concentration cell body (3) with high concentration cell body (4) are linked together, low-frequency corrosion pond (5) with high concentration cell body (4) are linked together high-frequency corrosion pond low-frequency corrosion pond (5) and it all waves the structure to be provided with in the washing pond.
2. The wafer etching cleaning apparatus of claim 1, wherein: the liquid distribution module also comprises two heating pipes (6), two liquid inlet pipes (7) and two liquid outlet pipes (8); two lower extreme, two in low concentration cell body (3) and high concentration cell body (4) are installed respectively in heating pipe (6) feed liquor pipe (7) one end all run through in box (1) one side, and be located respectively low concentration cell body (3) and high concentration cell body (4) upper end, two drain pipe (8) one end inlay respectively in one side in low concentration cell body (3) and high concentration cell body (4).
3. The wafer etching apparatus of claim 2, wherein: the circulating filtering structure comprises two water pumps (9), two mounting sleeves (10), two filtering shells (11), two baffles (12), a filtering material (13), two circulating pipes (14), two three-way valves (15) and a communicating pipe (16); two water pump (9) all install in box (1) a side wall face department, and the inlet end respectively with two drain pipe (8) one end is connected, two installation sleeve (10) one end respectively with two water pump (9) outlet end is connected, two filter housing (11) inlay respectively in two installation sleeve (10) lower extreme, two baffle (12) are installed respectively in two filter housing (11) inner centre department, filter media (13) are filled respectively in two in filter housing (11), two circulation pipe (14) one end respectively with two the installation sleeve (10) other end is connected, two three-way valve (15) wherein both ends respectively with two circulation pipe (14) and two inlet pipe (7) are connected, communicating pipe (16) both ends respectively with two the three-way valve (15) other end is connected.
4. The wafer etching cleaning apparatus of claim 3, wherein: the high-frequency corrosion pool comprises a high-concentration corrosion pool (17) and a low-concentration corrosion pool (18), the high-concentration corrosion pool (17) and the low-frequency corrosion pool (5) are communicated with the high-concentration tank body (4) through a first circulating pump (19) and a second circulating pump (20) respectively, and the low-concentration corrosion pool (18) is communicated with the low-concentration tank body (3) through a third circulating pump (21).
5. The wafer etching apparatus of claim 4, wherein: the cleaning pool comprises a first cleaning tank (23), a second cleaning tank (24) and a third cleaning tank (25) which are mutually communicated through a circulating pipe (22), a water injection pipeline is arranged on the third cleaning tank (25), and a drainage pipeline is arranged on the first cleaning tank (23).
6. The wafer etching cleaning apparatus of claim 5, wherein: the high-concentration corrosion tank (17), the low-concentration corrosion tank (18), the low-frequency corrosion tank (5), the first cleaning tank (23), the second cleaning tank (24) and the third cleaning tank (25) are all provided with the rocking structures, and each rocking structure comprises a motor (26), a rocker (27) connected with the output end of the motor (26), a cradle frame (28) connected with the rocker (27) and a wafer fixing device (29) arranged on the cradle frame (28).
7. A process for performing a wafer etch cleaning process using the wafer etch cleaning apparatus of claim 6, wherein: the method comprises the following specific steps:
A. according to the demand of the product, the wafer to be corroded, cleaned and processed is divided into two groups, namely a high frequency band and a low frequency band, wherein the high frequency band is as follows: f is more than 16.000MHz, and the low frequency band is: f is less than or equal to 16.000MHz;
B. firstly, placing the wafers in the high-frequency band group in the low-concentration corrosion tank (18) for soaking for pre-corrosion for at least 30min, wherein the corrosion degree of the wafers reaches 70%, and then placing the pre-corroded wafers in the high-concentration corrosion tank (17) for fine corrosion for at least 20min to finish the remaining 30%;
C. directly placing the wafers in the low-frequency band group into the low-frequency corrosion pool (5) for fine corrosion for at least 30min;
D. sequentially placing the high-frequency group wafer and the low-frequency group wafer which are subjected to corrosion processing into the first cleaning tank (23), the second cleaning tank (24) and the third cleaning tank (25) for soaking and cleaning, wherein the cleaning time in each tank is not less than 30min;
E. and taking out the wafer to finish the wafer corrosion cleaning process.
8. The wafer etch cleaning process of claim 7, wherein: in the etching solution in the high-concentration etching pool (17) and the low-frequency etching pool (5), the ratio of ammonium bifluoride to water is 1; in the etching solution in the low-concentration etching tank (18), the ratio of ammonium bifluoride to water is 1.
9. The wafer etch cleaning process of claim 7, wherein: when the corrosion is carried out in the steps B and C, the stability of the corrosion solution is controlled at 58 +/-1 ℃.
10. The wafer etch cleaning process of claim 7, wherein: during the process of etching and cleaning the wafer, the shaking structure is started and controls the cradle frame (28) to throw through the motor (26), and the throwing speed is monitored by the control device (2) in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870022.8A CN115261994B (en) | 2022-07-22 | 2022-07-22 | Wafer corrosion cleaning equipment and process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870022.8A CN115261994B (en) | 2022-07-22 | 2022-07-22 | Wafer corrosion cleaning equipment and process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115261994A true CN115261994A (en) | 2022-11-01 |
| CN115261994B CN115261994B (en) | 2024-04-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210870022.8A Active CN115261994B (en) | 2022-07-22 | 2022-07-22 | Wafer corrosion cleaning equipment and process thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995011548A1 (en) * | 1993-10-18 | 1995-04-27 | Seiko Epson Corporation | Rectangular at-cut quartz crystal plate, quartz crystal unit, and quartz oscillator and manufacture of quartz crystal plate |
| CN101532180A (en) * | 2009-03-11 | 2009-09-16 | 南京德研电子有限公司 | Method for frequency corrosion of wafers and equipment thereof |
| CN201990731U (en) * | 2011-01-17 | 2011-09-28 | 江阴市江海光伏科技有限公司 | Chip frequency corrosion and cleaning device |
| CN112111790A (en) * | 2020-09-21 | 2020-12-22 | 北京石晶光电科技股份有限公司 | Artificial wafer corrosion cleaning process |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995011548A1 (en) * | 1993-10-18 | 1995-04-27 | Seiko Epson Corporation | Rectangular at-cut quartz crystal plate, quartz crystal unit, and quartz oscillator and manufacture of quartz crystal plate |
| CN101532180A (en) * | 2009-03-11 | 2009-09-16 | 南京德研电子有限公司 | Method for frequency corrosion of wafers and equipment thereof |
| CN201990731U (en) * | 2011-01-17 | 2011-09-28 | 江阴市江海光伏科技有限公司 | Chip frequency corrosion and cleaning device |
| CN112111790A (en) * | 2020-09-21 | 2020-12-22 | 北京石晶光电科技股份有限公司 | Artificial wafer corrosion cleaning process |
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| CN115261994B (en) | 2024-04-05 |
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