CN101197490A - Double-area distribution Prague reflection mirror semiconductor laser structure and production method - Google Patents
Double-area distribution Prague reflection mirror semiconductor laser structure and production method Download PDFInfo
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- CN101197490A CN101197490A CNA2006101648835A CN200610164883A CN101197490A CN 101197490 A CN101197490 A CN 101197490A CN A2006101648835 A CNA2006101648835 A CN A2006101648835A CN 200610164883 A CN200610164883 A CN 200610164883A CN 101197490 A CN101197490 A CN 101197490A
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Abstract
The invention discloses the structure and the preparation method of a semiconductor laser with a bragg reflector with two-region structure, adopting a two-region structure simpler than three-region DBR-LD structure, i.e., only adopting the gain region and the grating region and disusing the phase band. The structure of the invention comprises an N-electrode, an N-GaAs underlay, an N-GaAs buffer layer, an N-AlGaAs lower cover layer, an undoped AlGaAs lower waveguide layer, an undoped AlGaAs lower barrier layer, an undoped AlGaInAs active layer, an undoped AlGaAs upper barrier layer, an undoped AlGaAs upper waveguide layer, an undoped GaInP grating layer, an undoped AlGaAs upper cover layer, a P-AlGaAs upper cover layer, a P-GaAs cap layer, a SiO2 layer, a P-electrode, and an insulating groove. The preparation method of the invention includes material growth and afterward manufacturing process.
Description
Technical field
The present invention relates to semiconductor laser field, the structure of particularly a kind of double-area distribution Prague reflection mirror (DBR) semiconductor laser.
The invention still further relates to the preparation method of above-mentioned semiconductor laser.
Background technology
The 852nm single mode semiconductor laser is widely used in the optical pumping and the aspects such as cooling system, optical-fibre communications, remote sensing survey, atomic physics and Experiments of Optics research of cesium-beam atomic clock.Make semiconductor laser realize that the most frequently used method of single longitudinal mode operation has outer-cavity structure and distributed feed-back (DFB) semiconductor laser/distribution Bragg reflector (DBR) semiconductor laser structure, this dual mode can be realized the continuous adjusting of laser diode (LD) excitation wavelength within the specific limits.For the LD of outer-cavity structure, can achieve the goal by fine setting grating angle, but to be volume big and optical coupled is complicated for its shortcoming.The DBR laser be by to gain region, phase adjusted district and grating region respectively injection current carry out the gain of light, phase matched and selection reflection, the injection current of control phase district and grating region just can reach the purpose of finely tuning excitation wavelength.Inject charge carrier and cause the effective refractive index of passive waveguide region to change, the peak wavelength of Bragg reflecting grating is moved, thereby cause the wavelength shift of device output.DBR-LD generally can obtain～the continuous adjustable range of wavelength of 10-12nm by the method that changes injection current.
Summary of the invention
The object of the present invention is to provide the structure of a kind of double-area distribution Prague reflection mirror (DBR) semiconductor laser.
Another purpose of the present invention is to provide the method for the above-mentioned semiconductor laser of preparation.
For achieving the above object, the structure of double-area distribution Prague reflection mirror semiconductor laser provided by the invention, its structure is:
One N type electrode is followed successively by on this N type electrode
N type GaAs substrate;
N type GaAs resilient coating;
Cap rock under the N type AlGaAs;
The non-AlGaAs lower waveguide layer of mixing;
The non-AlGaAs that mixes builds layer down;
The non-AlGaInAs active layer of mixing;
The non-on base layer of AlGaAs of mixing;
The non-AlGaAs that mixes goes up ducting layer;
The non-GaInP grating layer of mixing;
The non-AlGaAs that mixes goes up cap rock;
P type AlGaAs goes up cap rock;
P type GaAs cap layer;
SiO
2Layer is on P type GaAs cap layer both sides;
P type electrode is at SiO
2On layer and the P type GaAs cap layer;
Isolation trench is on P type electrode.
The structure of described double-area distribution Prague reflection mirror semiconductor laser, wherein, the component that cap rock and P type AlGaAs go up AlAs in the cap rock under the N type AlGaAs can be selected in 0.3～0.6 scope.
The structure of described double-area distribution Prague reflection mirror semiconductor laser, wherein, the non-AlGaAs of mixing lower waveguide layer and the non-AlGaAs that mixes go up the common separation limit structure of ducting layer employing or the separation limit structure of linear gradient, and the AlAs change of component scope during this is two-layer is 0.2-0.3～0.6.
The structure of described double-area distribution Prague reflection mirror semiconductor laser, wherein, the non-AlGaInAs of mixing active layer can adopt 0.65～2% compressive strain.
The structure of described double-area distribution Prague reflection mirror semiconductor laser, wherein, the non-grating layer of mixing adopts the GaInP material that mates with N type GaAs substrate lattice.
The method for preparing double-area distribution Prague reflection mirror semiconductor laser provided by the invention, its step is as follows:
A) building ducting layer and the non-GaInP grating layer of mixing on layer, the non-AlGaInAs of mixing active layer, the on base layer of the non-AlGaAs of mixing, the non-AlGaAs of mixing under cap rock, the non-AlGaAs of mixing lower waveguide layer, the non-AlGaAs of mixing under N type GaAs substrate epitaxial growth N type GaAs resilient coating successively, the N type AlGaAs;
B) growth SiO
2, use mask, at SiO
2On carve the grating region window;
C) carry out quantum well mixing;
D) add the wet method corroding method by holographic exposure on the non-GaInP of the mixing grating layer that exposes at institute windowing place and prepare grating;
E) remove SiO
2
F) cap rock and P type GaAs cap layer on cap rock, the P type AlGaAs on secondary epitaxy on the non-GaInP of the mixing grating layer is grown the non-AlGaAs of mixing successively;
G) photoetching and wet etching go out the ridged bar on P type GaAs cap layer, keep the photoresist above the ridged bar;
H) growth SiO
2Layer, band glue is peeled off SiO
2Layer exposes the ridged bar, then is covered with SiO outside the ridged bar
2
I) make P type electrode, steam Ti/Au;
J) use reticle, carve isolation trench; Corrosion Au, Ti; Remove p
+The Doped GaAs ohmic contact layer;
K) attenuate N type GaAs substrate is made N type electrode, steams Au-Ge-Ni/Au;
L) scribing, the cleavage slivering, plated film, cleavage tube core, sintering are finished the making of laser.
Described preparation method, wherein, the wet etching of grating adopts HBr-HNO among the step D
3-H
2O or Br
2-HBr-H
2The O corrosive liquid.
Described preparation method, wherein, the wet etching of ridged bar adopts H among the step G
2SO
4-H
2O
2-H
2O or H
3PO
4-H
2O
2-CH
3The OH corrosive liquid.
Described preparation method, wherein, the component that cap rock and P type AlGaAs go up AlAs in the cap rock under the N type AlGaAs is selected in 0.3～0.6 scope.
Described preparation method, wherein, the non-AlGaAs of mixing lower waveguide layer and the non-AlGaAs that mixes go up the separation limit structure that ducting layer adopts separation limit structure or linear gradient, and AlAs change of component scope is 0.2-0.3～0.6.
Described preparation method, wherein, the non-AlGaInAs active layer of mixing adopts 0.65%～2% compressive strain.
Described preparation method, wherein, the non-grating layer of mixing adopts the GaInP material that mates with N type GaAs substrate lattice.
The present invention has used the simply two-region structure of some of the relative three district DBR-LD of technology, promptly has only gain region and grating region, has cast out phase region.
The beneficial effect of technical solution of the present invention is:
1) adopts the two-region structure, simplified manufacture craft;
2) change the adjusting that the grating region electric current can be realized wavelength.
Description of drawings
Fig. 1 is the structural representation of double-area distribution Prague reflection mirror of the present invention (DBR) semiconductor laser; Wherein Fig. 1 a is the cross sectional view of laser, and Fig. 1 b is vertical view of laser figure;
Fig. 2 is the P-I-V curve of this device.
Fig. 3 is the sharp spectrogram of penetrating of this device; Wherein Fig. 3 a is that device swashs the spectrogram of penetrating back (150mA); Fig. 3 b is the spectrogram that grating region adds electric current.
Embodiment
For further specifying concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describes in detail as after.
Shown in Fig. 1 a and Fig. 1 b, the structure of double-area distribution Prague reflection mirror of the present invention (DBR) semiconductor laser is:
One N type electrode 1 is followed successively by on this N type electrode 1
N type GaAs substrate 2;
N type GaAs resilient coating 3;
The non-AlGaAs lower waveguide layer 5 of mixing;
The non-AlGaAs that mixes builds layer 6 down;
The non-AlGaInAs active layer 7 of mixing;
The non-on base layer 8 of AlGaAs of mixing;
The non-AlGaAs that mixes goes up ducting layer 9;
The non-GaInP grating layer 10 of mixing;
The non-AlGaAs that mixes goes up cap rock 11;
P type AlGaAs goes up cap rock 12;
P type GaAs cap layer 13;
SiO
2Layer 14 is on P type GaAs cap layer 13 both sides;
The distribution Bragg reflector of present embodiment (DBR) semiconductor laser structure comprises that by steaming the P type electrode 15 that Au-Ge-Ni/Au makes, the function of the two is to make impressed current to be injected in the device by steaming the N type electrode 1 that Ti/Pt/Au makes; N type GaAs substrate 2; N type GaAs resilient coating 3 its role is to reduce the defective that structure growth is produced owing to directly on substrate 2, thereby improves the quality of device; Cap rock 4 and P type AlGaAs go up cap rock 12 under the N type AlGaAs, wherein the component of AlAs is chosen as 0.4 (that is: AlAs component and GaAs ratio of component is 40% among the AlGaAs, below identical), be to consider on the one hand the enough light and the effect of carrier confinement can be provided, avoid the component of too high AlAs to be easy to oxidation on the other hand, thereby growth bring difficulty to material; The non-AlGaAs of mixing lower waveguide layer 5 and the non-AlGaAs that mixes go up ducting layer 9, the two constitutes linear gradient separation limit structure, the wherein non-AlAs component of mixing in the AlGaAs lower waveguide layer 5 is by 0.4 linear gradient to 0.2, the non-AlGaAs that mixes builds down in the layer 6 the AlAs component by 0.2 linear gradient to 0.4, linear gradient separation limit structure can provide better restriction to light and charge carrier compared to common separation limit structure, thereby can better reduce optical loss and reduce threshold current; The non-AlGaAs of mixing builds layer 6 and the non-on base layer 8 of AlGaAs of mixing down, the component of AlAs is chosen as 0.2, its effect is carrier confinement in active area, if the component of AlAs is low excessively, then to the restriction variation of charge carrier, thereby can make easier the leaking into of charge carrier lack the subarea accordingly, make the device performance variation, this situation is more serious when temperature raises; The non-AlGaInAs active layer 7 of mixing adopts 0.65% compressive strain (this compressive strain is the ratio of difference and the lattice constant of substrate GaAs of the lattice constant of AlGaInAs and substrate GaAs), and PL composes the peak in the 845-855nm scope.Its effect is to be used for forming the gain of light, the AlGaInAs active layer has as differential gain height compared to strainless GaAs active layer, but why characteristics such as thickness and Al/In component independent regulation do not have to adopt higher compressive strain, are in order to reduce the difficulty of material growth; The non-GaInP grating layer 10 of mixing adopts the GaInP material with N type GaAs substrate 2 lattice match, and grating layer adopts the GaInP material effects of no aluminium to be to overcome to contain the problem that the easy oxidation of aluminium grating brings; The non-AlGaAs cap rock 11 of mixing, the component of AlAs is chosen as 0.2, forms the difference of refractive index with the non-GaInP grating layer 10 of mixing, thereby reaches the purpose to the light feedback that produces; P type GaAs cap layer 13; SiO
214 are used to limit electric current; Isolation trench 16 is used to limit electric current.
The distribution Bragg reflector of present embodiment (DBR) semiconductor laser manufacture method comprises:
A) adopt epitaxy technique mocvd method epitaxial growth N type GaAs resilient coating 3 successively on N type GaAs substrate 2, its role is to reduce the defective that structure growth is produced owing to directly on N type GaAs substrate 2, thereby improve the quality of device; Cap rock 4 under the N type AlGaAs, the component of AlAs is chosen as 0.4; The non-AlGaAs lower waveguide layer 5 of mixing, the AlAs component is by 0.4 linear gradient to 0.2; The non-AlGaAs that mixes builds layer 6 down, and the component of AlAs is chosen as 0.2; The non-AlGaInAs active layer 7 of mixing adopts 0.65% compressive strain, and PL spectrum peak is in the 845-855nm scope.Its effect is to be used for forming the gain of light, the AlGaInAs active layer has as differential gain height compared to strainless GaAs active layer, but why characteristics such as thickness and Al/In component independent regulation do not have to adopt higher compressive strain, are in order to reduce the difficulty of material growth; The non-on base layer 8 of AlGaAs of mixing, the component of AlAs is chosen as 0.2, the effect that itself and the non-AlGaAs of mixing build layer 6 down is carrier confinement in active area, if the component of AlAs is low excessively, then to the restriction variation of charge carrier, thereby can make easier the leaking into of charge carrier lack the subarea accordingly, make the device performance variation, this situation is more serious when temperature raises; The non-AlGaAs that mixes goes up ducting layer 9, the AlAs component is by 0.2 linear gradient to 0.4, itself and non-ly mix AlGaAs lower waveguide layer 5 the two constitute linear gradient separation limit structures, linear gradient separation limit structure can provide better restriction to light and charge carrier compared to common separation limit structure, thereby can better reduce the effect of optical loss and reduction threshold current; The non-GaInP grating layer 10 of mixing adopts the GaInP material with N type GaAs substrate 2 lattice match, and grating layer adopts the GaInP material effects of no aluminium to be to overcome to contain the problem that the easy oxidation of aluminium grating brings;
B) growth 100nmSiO
2, use mask, on the non-GaInP of mixing grating layer 10, carve the grating region window;
C) the Si ion injects, and carries out quantum well mixing;
D) add the wet method corroding method by holographic exposure on the non-GaInP of the mixing grating layer 10 that exposes at institute windowing place and prepare grating, wherein to adopt volume ratio be HBr-HNO to the wet etching of grating
3-H
2The O corrosive liquid, corrosion obtains the grating that the cycle is 252nm, as shown in Figure 2;
E) remove SiO
2
F) cap rock 11 on secondary epitaxy on the non-GaInP of the mixing grating layer 10 is grown the non-AlGaAs of mixing successively, the component of AlAs is chosen as 0.2, forms the difference of refractive index with the non-GaInP grating layer 10 of mixing, thereby reaches the purpose to the light feedback that produces; P type AlGaAs goes up cap rock 12, and the component of AlAs is chosen as 0.4, and the function of cap rock 4 provides enough light and carrier confinement under itself and the N type AlGaAs; P type GaAs cap layer 13;
G) photoetching and wet etching go out the ridged bar on P type GaAs cap layer 13, its role is to guarantee that the one-sided die worker of device does, and it is H that the wet etching of ridged bar adopts volume ratio
2SO
4: H
2O
2: H
2O=1: 8: 40 corrosive liquids.Keep the photoresist above the ridged bar;
H) growth 200nm SiO
2Layer 14, band glue is peeled off SiO
2Layer 14 exposes the ridged bar, then is covered with SiO outside the ridged bar
2, its role is to limit electric current;
I) make P type electrode 15, steam Ti/Au;
J) use reticle, carve the 20nm isolation trench; KI solution corrosion Au; H
2SO
4: H
2O=1: 1 solution, 90 ℃ of corrosion Ti; The thick p of 200nm is removed in corrosion
+Doped GaAs ohmic contact layer 13;
K) attenuate N type GaAs substrate 2 is made N type electrode 1, steams Au-Ge-Ni/Au;
L) scribing, the cleavage slivering, plated film, cleavage tube core, sintering are finished the making of laser.
The device P-I-V curve of present embodiment preparation as shown in Figure 2.Under the room temperature pulse excitation, swash and penetrate, threshold current 150mA, the peak value of pulse luminous power reaches 6mW (shown in Fig. 3 a).Its peak-mode has 0.65nm to move (shown in Fig. 3 b) when grating region adds the 20mA forward current.Though the spectrum that swashs after penetrating is not single longitudinal mode, along with this problem of raising of prepared grating quality can be resolved.
Claims (12)
1. the structure of a double-area distribution Prague reflection mirror semiconductor laser, its structure is:
One N type electrode is followed successively by on this N type electrode
N type GaAs substrate;
N type GaAs resilient coating;
Cap rock under the N type AlGaAs;
The non-AlGaAs lower waveguide layer of mixing;
The non-AlGaAs that mixes builds layer down;
The non-AlGaInAs active layer of mixing;
The non-on base layer of AlGaAs of mixing;
The non-AlGaAs that mixes goes up ducting layer;
The non-GaInP grating layer of mixing;
The non-AlGaAs that mixes goes up cap rock;
P type AlGaAs goes up cap rock;
P type GaAs cap layer;
SiO
2Layer is on P type GaAs cap layer both sides;
P type electrode is at SiO
2On layer and the P type GaAs cap layer;
Isolation trench is on P type electrode.
2. the structure of double-area distribution Prague reflection mirror semiconductor laser according to claim 1, wherein, the component that cap rock and P type AlGaAs go up AlAs in the cap rock under the N type AlGaAs can be selected in 0.3～0.6 scope.
3. the structure of double-area distribution Prague reflection mirror semiconductor laser according to claim 1, wherein, the non-AlGaAs of mixing lower waveguide layer and the non-AlGaAs that mixes go up the common separation limit structure of ducting layer employing or the separation limit structure of linear gradient, and the AlAs change of component scope during this is two-layer is 0.2-0.3～0.6.
4. the structure of double-area distribution Prague reflection mirror semiconductor laser according to claim 1, wherein, the non-AlGaInAs of mixing active layer can adopt 0.65～2% compressive strain.
5. the structure of double-area distribution Prague reflection mirror semiconductor laser according to claim 1, wherein, the non-grating layer of mixing adopts GaInP material with N type GaAs substrate lattice coupling.
6. the method for preparing the described double-area distribution Prague reflection mirror semiconductor laser of claim 1, its step is as follows:
A) building ducting layer and the non-GaInP grating layer of mixing on layer, the non-AlGaInAs of mixing active layer, the on base layer of the non-AlGaAs of mixing, the non-AlGaAs of mixing under cap rock, the non-AlGaAs of mixing lower waveguide layer, the non-AlGaAs of mixing under N type GaAs substrate epitaxial growth N type GaAs resilient coating successively, the N type AlGaAs;
B) growth SiO
2, use mask, at SiO
2On carve the grating region window;
C) carry out quantum well mixing;
D) add the wet method corroding method by holographic exposure on the non-GaInP of the mixing grating layer that exposes at institute windowing place and prepare grating;
E) remove SiO
2
F) cap rock and P type GaAs cap layer on cap rock, the P type AlGaAs on secondary epitaxy on the non-GaInP of the mixing grating layer is grown the non-AlGaAs of mixing successively;
G) photoetching and wet etching go out the ridged bar on P type GaAs cap layer, keep the photoresist above the ridged bar;
H) growth SiO
2Layer, band glue is peeled off SiO
2Layer exposes the ridged bar, then is covered with SiO outside the ridged bar
2
I) make P type electrode, steam Ti/Au;
J) use reticle, carve isolation trench; Corrosion Au, Ti; Remove p
+The Doped GaAs ohmic contact layer;
K) attenuate N type GaAs substrate is made N type electrode, steams Au-Ge-Ni/Au;
L) scribing, the cleavage slivering, plated film, cleavage tube core, sintering are finished the making of laser.
7. preparation method according to claim 6, wherein, the wet etching of grating adopts HBr-HNO among the step D
3-H
2O or Br
2-HBr-H
2The O corrosive liquid.
8. preparation method according to claim 6, wherein, the wet etching of ridged bar adopts H among the step G
2SO
4-H
2O
2-H
2O or H
3PO
4-H
2O
2-CH
3The OH corrosive liquid.
9. preparation method according to claim 6, wherein, the component that cap rock and P type AlGaAs go up AlAs in the cap rock under the N type AlGaAs is selected in 0.3～0.6 scope.
10. preparation method according to claim 6, wherein, the non-AlGaAs of mixing lower waveguide layer and the non-AlGaAs that mixes go up the separation limit structure that ducting layer adopts separation limit structure or linear gradient, and AlAs change of component scope is 0.2-0.3～0.6.
11. preparation method according to claim 6, wherein, the non-AlGaInAs active layer of mixing adopts 0.65%～2% compressive strain.
12. preparation method according to claim 6, wherein, the non-grating layer of mixing adopts the GaInP material that mates with N type GaAs substrate lattice.
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| CNA2006101648835A CN101197490A (en) | 2006-12-07 | 2006-12-07 | Double-area distribution Prague reflection mirror semiconductor laser structure and production method |
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ID=39547706
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022892A (en) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN106654859A (en) * | 2016-09-22 | 2017-05-10 | 苏州长光华芯光电技术有限公司 | Wet etching method |
| CN109038217A (en) * | 2018-10-31 | 2018-12-18 | 厦门乾照半导体科技有限公司 | The VCSEL chip and production method and electronic device to prolong the service life |
| CN112687768A (en) * | 2020-12-01 | 2021-04-20 | 木昇半导体科技(苏州)有限公司 | Epitaxial material growth method capable of modulating grating array structure |
| CN113380908A (en) * | 2021-04-22 | 2021-09-10 | 华灿光电(苏州）有限公司 | Infrared semiconductor chip with grating structure and preparation method thereof |
| CN113659431A (en) * | 2021-08-11 | 2021-11-16 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser with switchable single wavelength and dual wavelength and preparation method thereof |
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2006
- 2006-12-07 CN CNA2006101648835A patent/CN101197490A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022892A (en) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN103022892B (en) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN106654859A (en) * | 2016-09-22 | 2017-05-10 | 苏州长光华芯光电技术有限公司 | Wet etching method |
| CN106654859B (en) * | 2016-09-22 | 2019-07-02 | 苏州长光华芯光电技术有限公司 | A kind of wet etching method |
| CN109038217A (en) * | 2018-10-31 | 2018-12-18 | 厦门乾照半导体科技有限公司 | The VCSEL chip and production method and electronic device to prolong the service life |
| CN109038217B (en) * | 2018-10-31 | 2024-04-26 | 厦门乾照半导体科技有限公司 | VCSEL chip with prolonged service life, manufacturing method and electronic device |
| CN112687768A (en) * | 2020-12-01 | 2021-04-20 | 木昇半导体科技(苏州)有限公司 | Epitaxial material growth method capable of modulating grating array structure |
| CN113380908A (en) * | 2021-04-22 | 2021-09-10 | 华灿光电(苏州）有限公司 | Infrared semiconductor chip with grating structure and preparation method thereof |
| CN113380908B (en) * | 2021-04-22 | 2022-06-17 | 华灿光电(苏州）有限公司 | Infrared semiconductor chip with grating structure and preparation method thereof |
| CN113659431A (en) * | 2021-08-11 | 2021-11-16 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser with switchable single wavelength and dual wavelength and preparation method thereof |
| CN113659431B (en) * | 2021-08-11 | 2022-07-15 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser with single-wavelength and double-wavelength switchability and preparation method thereof |
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