CN110611244B - Method for preparing single-mode gallium arsenide-based quantum dot laser - Google Patents

Method for preparing single-mode gallium arsenide-based quantum dot laser Download PDF

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CN110611244B
CN110611244B CN201910896555.1A CN201910896555A CN110611244B CN 110611244 B CN110611244 B CN 110611244B CN 201910896555 A CN201910896555 A CN 201910896555A CN 110611244 B CN110611244 B CN 110611244B
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杨涛
丁芸芸
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A method of fabricating a single-mode gallium arsenide-based quantum dot laser, the method comprising: growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, and carrying out one-time standard photoetching on the mask thin layer to manufacture a surface high-order grating groove; growing a mask thin layer on the P surface of the epitaxial wafer, and performing secondary standard photoetching on the mask thin layer to manufacture a strip ridge waveguide; then, a layer of mask thin layer is grown again, and three times of standard photoetching are carried out to form an electric injection window; performing standard photoetching on the P surface of the epitaxial wafer for four times and stripping the photoresist to form a P surface ohmic contact electrode; and finally, an ohmic contact electrode is manufactured on the N-type substrate on the back of the gallium arsenide-based epitaxial wafer, the gallium arsenide-based epitaxial wafer is cleaved to form a laser comprising a gain region and a high-order grating region, and the laser is packaged. The invention can generate stable single-mode lasing without making small-period grating and secondary epitaxy through a standard photoetching process, thereby reducing the complexity and cost of the process and being easy for the preparation and large-scale production of devices.

Description

Method for preparing single-mode gallium arsenide-based quantum dot laser
Technical Field
The invention relates to the technical field of semiconductor photoelectron, in particular to a preparation method of a single-mode gallium arsenide-based quantum dot laser.
Background
The light of the wave band which is positioned in the window of the optical fiber transmission and has smaller chromatic dispersion in the common single-mode optical fiber meets the requirement of local area network or urban area network data exchange, and is very suitable for short-distance data transmission. The current commercial optical communication lan light source is mainly an InP-based quantum well laser, which is difficult to satisfy the requirements of low cost, low power consumption, high-speed direct modulation due to the limitation of the characteristics of the material system, and it has a fatal disadvantage: the output varies significantly with temperature.
Faster carrier dynamics in quantum dots contribute to an increase in the modulation rate of the device compared to quantum wells. The GaAs-based quantum dot laser is expected to have higher modulation rate, higher temperature stability and lower cost than the traditional InP-based quantum well laser, and is very likely to become a light source of the next generation of high-speed optical communication local area network.
For special requirements of long-distance communication systems, special gas detection, realization of pure-color visible light sources through frequency doubling and the like, a single longitudinal mode lasing laser must be adopted. At present, the most common method for realizing single longitudinal mode is to manufacture a bragg grating structure in a semiconductor laser, and select the longitudinal mode by utilizing distributed feedback of the grating, thereby realizing single longitudinal mode lasing.
A distributed feedback semiconductor laser (DFB) and a distributed bragg reflector semiconductor laser (DBR) that are excellent in monochromaticity and stability are commonly used. However, in the manufacturing process of devices such as DFB and DBR, the high-precision grating is often required to be manufactured by using electron beam exposure and the like, and the secondary epitaxy is required, which increases the complexity and cost of the manufacturing process and reduces the yield. Meanwhile, for the GaAs-based quantum dot laser, the upper and lower limiting layers are usually formed by epitaxy of materials rich in aluminum components, so that the problems of aluminum component oxidation and the like easily occur in the secondary epitaxy process, and the reliability of the device is reduced.
Disclosure of Invention
Technical problem to be solved
The invention mainly aims to provide a preparation method of a single-mode gallium arsenide-based quantum dot laser, which aims to solve the problems that a single longitudinal mode laser is complex in manufacturing process, high in cost and not easy to produce in a large scale.
(II) technical scheme
The preparation method of the single-mode gallium arsenide-based quantum dot laser comprises the following steps:
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, and etching the mask thin layer, the contact layer and the upper limiting layer by taking photoresist as a mask to prepare a surface high-order grating groove;
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, and etching the mask thin layer, the contact layer and the upper limiting layer by taking photoresist as a mask to form a strip-shaped ridge waveguide;
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, and etching the mask thin layer by taking photoresist as a mask to form an electric injection window;
performing standard photoetching on the P surface of the epitaxial wafer for four times and stripping the photoresist to form a P surface ohmic contact electrode;
manufacturing an ohmic contact electrode on the N-type substrate on the back of the gallium arsenide-based epitaxial wafer;
and (3) cleaving the laser comprising the gain region and the high-order grating region on the GaAs-based epitaxial wafer, and packaging the laser.
Wherein, at gallium arsenide base epitaxial wafer P face growth mask thin layer, use the photoresist to etch mask thin layer, contact layer and go up the restriction layer and prepare out surperficial high-order grating groove as the mask, specifically include:
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer through chemical vapor deposition, performing primary standard photoetching on the mask thin layer to transfer the pattern of the high-order grating on the photoetching plate onto positive photoresist, preparing a surface high-order grating groove by taking the photoresist as a mask and adopting a dry etching method to etch the mask thin layer, the contact layer and the upper limiting layer, and corroding the residual mask thin layer;
wherein, grow one deck mask thin layer on gallium arsenide base epitaxial wafer P face to the photoetching glue is mask etching mask thin layer, contact layer and upper limit layer and forms bar ridge waveguide, specifically includes:
a mask thin layer is regrown on the P surface of the epitaxial wafer through chemical vapor deposition, then secondary standard photoetching is carried out on the mask thin layer to transfer the pattern of the strip-shaped ridge waveguide on the photoetching plate onto positive photoresist, the photoresist is used as a mask, and the mask thin layer, the contact layer and the upper limiting layer are etched by a dry method to form the strip-shaped ridge waveguide;
wherein, gallium arsenide base epitaxial wafer P face grows a layer of mask thin layer to the photoetching glue is the mask and etches the mask thin layer and forms the electricity and pours into the window, specifically includes:
growing a layer of mask thin layer on the P surface of the epitaxial wafer through chemical vapor deposition, then carrying out three times of standard photoetching on the mask thin layer to transfer the pattern of the electric injection window on the photoetching plate to negative photoresist, and etching the mask thin layer by adopting a dry method by taking the photoresist as a mask to form an electric injection window;
the method comprises the following steps of carrying out standard photoetching on the P surface of an epitaxial wafer for four times and stripping photoresist to form a P-surface ohmic contact electrode, and specifically comprises the following steps:
and performing four times of standard photoetching, transferring the electrode pattern on the photoetching plate to negative photoresist, sputtering or evaporating a metal layer on the epitaxial wafer with the photoresist, and finally soaking and stripping the photoresist by adopting an organic solution to form a P-surface ohmic contact electrode.
Wherein, make ohmic contact electrode on the N type substrate of gallium arsenide base epitaxial wafer back, include specifically:
thinning and polishing the N-type substrate on the back of the GaAs-based epitaxial wafer, manufacturing an N-side ohmic contact electrode by evaporating metal, and alloying the P-side electrode and the N-side ohmic contact electrode;
the method comprises the following steps of cleaving a gallium arsenide-based epitaxial wafer to obtain a laser including a gain region and a high-order grating region, and packaging the laser, and specifically comprises the following steps:
and the area of the gallium arsenide epitaxial wafer without the grating is a gain area, a laser comprising the gain area and the high-order grating area is cleaved by using a nicking tool according to the cleavage surface of the gallium arsenide-based epitaxial wafer and sintered on a copper heat sink to realize the packaging of the laser, and then, a lead is led to an electrode to complete the packaging of the laser.
(III) advantageous effects
1. The preparation method of the single-mode gallium arsenide-based quantum dot laser provided by the invention uses the standard photoetching technology to prepare the grating groove with the refractive index perturbation surface, and can reduce the complexity and the cost of the process while ensuring the single-mode lasing of the laser.
2. The preparation method of the single-mode gallium arsenide-based quantum dot laser is particularly suitable for preparing the single-mode gallium arsenide-based quantum dot laser with the wave band of 1.3 mu m and containing aluminum components, can effectively avoid the problems of aluminum oxidation and the like caused by the traditional secondary epitaxial preparation method, and enhances the reliability of devices.
Drawings
Fig. 1 is a flow chart of a method of fabricating a single-mode gallium arsenide based quantum dot laser according to an embodiment of the present invention;
fig. 2 is a diagram of mirror loss based on a transfer matrix model simulation in a method of fabricating a single-mode gaas-based quantum dot laser according to an embodiment of the present invention;
FIG. 3 is a current-power curve of a single-mode GaAs-based quantum dot laser in accordance with an embodiment of the present invention;
FIG. 4 is a spectral diagram of a single-mode GaAs-based quantum dot laser with a single current injection in accordance with an embodiment of the present invention;
FIG. 5 is a spectral diagram of a single-mode GaAs-based quantum dot laser with variable current injection in accordance with an embodiment of the present invention;
FIG. 6 is a process flow diagram of a single mode GaAs-based quantum dot laser in accordance with an embodiment of the present invention; wherein the content of the first and second substances,
FIG. 6(I) is a thin layer of growth mask; FIG. 6(II) is a thin mask layer for photolithography; FIG. 6(III) is a high-order grating groove formed by dry etching; FIG. 6(IV) shows the thin layer of the etch mask; FIG. 6(V) is a growth mask film; FIG. 6(VI) is a thin layer of a photolithographic etch mask; FIG. 6(VII) is a dry etching process for forming a stripe-shaped ridge waveguide; FIG. 6(VIII) is a thin layer of etch mask; FIG. 6(IX) is a growth mask film; FIG. 6(X) is a diagram illustrating the formation of an electrical implant window by lithographically etching a thin layer of a mask; FIG. 6(XI) shows sputtering or evaporating the front metal electrode; FIG. 6(XII) shows the formation of P-side electrodes by tape stripping.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1, fig. 1 is a flowchart of a method for manufacturing a single-mode gaas-based quantum dot laser according to an embodiment of the present invention, where the single-mode gaas-based quantum dot laser adopts a stripe ridge waveguide structure, and includes a gain region and a high-order grating region, where the high-order grating region is formed by deep etching a series of equal-period grating grooves and introducing a refractive index modulation method into a Fabry-perot (FP) cavity, so that the mirror loss of the FP cavity generates a minimum value at a specific wavelength. When the device is operated above the threshold, the smallest mode gain dot preferentially lases, thereby forming a single mode quantum dot laser.
The preparation method of the single-mode gallium arsenide-based quantum dot laser comprises the following steps:
step 1: growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer through chemical vapor deposition, performing primary standard photoetching on the mask thin layer to transfer the pattern of the high-order grating on the photoetching plate to positive photoresist, preparing a surface high-order grating groove by taking the photoresist as a mask and adopting a dry etching method to etch the mask thin layer, the contact layer and the upper limiting layer, and corroding the residual mask thin layer;
growing a thin mask layer on P surface of GaAs-based epitaxial wafer by Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD)The growth result on the P-side of the gaas-based epitaxial wafer is shown in fig. 6(I), in which the P-side is denoted by reference numeral 3 and includes an N-type gaas substrate, an N-side gaas confinement layer (N-type doped), and an N-side waveguide layer (undoped); the material 1 comprises a P-face waveguide layer (undoped), a P-face gallium arsenide limiting layer (P-type doped), and a GaAs ohmic contact layer (P-type heavily doped); 2 represents a quantum dot active region; and then, carrying out one-time standard photoetching, and transferring the pattern of the high-order grating on the photoetching plate onto positive photoresist, wherein the thickness of the photoresist is 0.5-5 mu m, and the direction of the high-order grating is vertical to the crystal direction of the surface of the epitaxial wafer, and the result is shown in fig. 6 (II). And then dry etching the mask thin layer by using the photoresist as a mask and adopting Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) technology, wherein the gas used for the dry etching is Ar2、CF4Or CHF3Etching depth of 200-1000 nm; continuously adopting ICP dry method to etch the contact layer and the upper limiting layer, wherein the gas is Cl2And BCl3The etching time and the etching depth in the etching process are determined by a step profiler test, the etching depth is 1 to 5 μm, and a surface high-order grating groove is prepared, and the result is shown in fig. 6 (III). The etching of the remaining mask layer results in the following FIG. 6 (IV).
Wherein the mask thin layer grown on the P surface of the GaAs-based epitaxial wafer is SiO2Or Si3N4And the thickness is 200 to 1000 nm. SiO can be grown by Plasma Enhanced Chemical Vapor Deposition (PECVD)2(ii) a Si growth by Low Pressure Chemical Vapor Deposition (LPCVD)3N4。
Width d of single grating etching groove of prepared surface high-order gratingsWidth d of single grating not etchedwAnd the grating period lambda and other parameters are calculated as follows:
Figure BDA0002208633480000051
Figure BDA0002208633480000052
∧＝ds+dw
wherein d issIs the width of the single grating etched groove, dwIs the unetched width of a single grating, nsIs the effective refractive index of the etched region, nwIs the effective refractive index of the un-etched region, p and q are integers, p + q +1 is the grating order, lambda is the Bragg wavelength corresponding to the grating, the loss corresponding to the grating at the wavelength is the lowest, and lambda represents the grating period.
The gallium arsenide-based epitaxial wafer structure sequentially comprises an N-type gallium arsenide substrate, an N-surface gallium arsenide limiting layer (N-type doped), an N-surface waveguide layer (undoped), a quantum dot active layer, a P-surface waveguide layer (undoped), a P-surface gallium arsenide limiting layer (P-type doped) and a GaAs ohmic contact layer (P-type heavily doped) from bottom to top. As shown in fig. 6(I, II, III, IV), fig. 6(I) is a thin growth mask layer; FIG. 6(II) is a thin mask layer for photolithography; FIG. 6(III) is a high-order grating groove formed by dry etching; FIG. 6(IV) shows the thin layer of the etch mask; in FIG. 6, 3 represents a substrate including an N-type GaAs substrate, an N-plane GaAs confinement layer (N-type doped), and an N-plane waveguide layer (undoped); 1 represents a P-face waveguide layer (undoped), a P-face gallium arsenide limiting layer (P-type doped), a GaAs ohmic contact layer (P-type heavily doped); 2 represents a quantum dot active region; 4 denotes a high-order grating groove;
step 2: a mask thin layer is regrown on the P surface of the epitaxial wafer through chemical vapor deposition, then secondary standard photoetching is carried out on the mask thin layer to transfer the pattern of the strip-shaped ridge waveguide on the photoetching plate onto positive photoresist, the photoresist is used as a mask, and the mask thin layer, the contact layer and the upper limiting layer are etched by a dry method to form the strip-shaped ridge waveguide;
and (2) regrowing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer through chemical vapor deposition, performing secondary standard photoetching, transferring the pattern of the strip-shaped ridge waveguide on the photoetching plate onto positive photoresist, wherein the direction of the ridge waveguide is vertical to the direction of the grating and is parallel to the direction of the product direction, taking the photoresist as the mask, and etching the mask thin layer, the contact layer and the upper limiting layer by adopting a dry method to obtain the strip-shaped ridge waveguide, and etching off the residual mask thin layer. As shown in fig. 6(V, VI, VII, VIII), fig. 6(V) shows the growth of a thin mask layer by chemical vapor deposition; FIG. 6(VI) shows a thin layer of a photolithographic etch mask; FIG. 6(VII) shows dry etching to form a stripe ridge waveguide; FIG. 6(VIII) shows an etch mask layer; in fig. 6, 5 denotes a stripe ridge waveguide;
and step 3: growing a layer of mask thin layer on the P surface of the epitaxial wafer through chemical vapor deposition, then carrying out three times of standard photoetching on the mask thin layer to transfer the pattern of the electric injection window on the photoetching plate to negative photoresist, and etching the mask thin layer by adopting a dry method by taking the photoresist as a mask to form an electric injection window;
and growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, performing three times of standard photoetching, transferring the pattern of the electric injection window on the photoetching plate to negative photoresist, and etching the mask thin layer by adopting a dry method to form the electric injection window. As shown in fig. 6(IX, X), fig. 6(IX) shows the growth of a thin mask layer by chemical vapor deposition; FIG. 6(X) shows a thin layer of a photolithographic etching mask forming an electrical implant window;
and 4, step 4: and performing four times of standard photoetching, transferring the electrode pattern on the photoetching plate to negative photoresist, sputtering or evaporating a metal layer on the epitaxial wafer with the photoresist, and finally soaking and stripping the photoresist by adopting an organic solution to form a P-surface ohmic contact electrode.
And performing standard photoetching for four times, transferring an electrode pattern on the photoetching plate to negative photoresist, sputtering or evaporating a metal layer on the epitaxial wafer with the photoresist, finally soaking and stripping the photoresist by adopting organic solution to form a P-surface ohmic contact electrode, wherein the P surface adopts a beat-shaped electrode, only one electrode covers the gain region and the grating region in the cavity length direction of the laser, and the metal of the groove part of the grating is stripped. The metal material is Ti/Au or Au/Zn/Au or Cr/Au. Sputtering or evaporating a front metal electrode on the epitaxial wafer with the photoresist as shown in FIG. 6(XI), and stripping the photoresist to form a P-side electrode as shown in FIG. 6 (XII);
and 5: thinning and polishing the N-type substrate on the back of the GaAs-based epitaxial wafer, manufacturing an N-surface ohmic contact electrode by evaporating metal, and alloying the P surface and the N surface ohmic contact electrodes;
and thinning and polishing the N-type substrate on the back of the epitaxial wafer to 70-200 mu m, evaporating metal Au/Ge/Ni/Au or Cr/Au to manufacture an N-surface ohmic contact electrode, and alloying the P-surface ohmic contact electrode and the N-surface ohmic contact electrode. The alloy conditions are nitrogen protection, 200 ℃ to 600 ℃, 30 seconds to 5 minutes.
Step 6: the area of the GaAs epitaxial wafer without the grating is a gain area, a tube core comprising the gain area and a high-order grating area is cleaved by a nicking tool according to the cleavage surface of the GaAs-based epitaxial wafer and sintered on a copper heat sink to realize the packaging of the laser, and then a lead is led to an electrode to complete the packaging of the laser;
and cleaving the tube core containing the gain region and the high-order grating region according to the cleavage surface of the gallium arsenide-based epitaxial wafer by using a nicking tool, sintering the tube core on the copper heat sink to package the laser, and then leading the electrode.
FIG. 2 is a calculated grating loss spectrum with three mirror loss minima appearing at 1.287 μm, 1.325 μm and 1.365 μm, with two adjacent minima spaced approximately 39nm apart. It can be seen that the high-order grating region is formed by deep etching a series of equal-period grating grooves and introducing a refractive index modulation method into the FP cavity, so that the mirror loss of the FP cavity generates a minimum value at a specific wavelength.
As can be seen from the current-power curve of the single-mode gaas-based quantum dot laser shown in fig. 3, the single-mode quantum dot laser manufactured by introducing the refractive index perturbation surface high-order grating groove has high output power. As can be seen from the spectrograms of the single-mode gaas-based quantum dot lasers shown in fig. 4 and 5, the quantum dot laser fabricated by this method has a high side-mode suppression ratio.
The single-mode gallium arsenide-based quantum dot laser provided by the invention adopts a strip ridge waveguide structure and comprises a gain region and a high-order grating region, wherein the high-order grating region is formed by deeply etching a series of equal-period grating grooves and introducing a refractive index modulation method into a Fabry-Perot (FP) cavity, so that the mirror loss of the FP cavity generates a minimum value at a specific wavelength. When the device is operated above the threshold, the smallest threshold gain point preferentially lases, thereby forming a single mode quantum dot laser.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (8)

1. A method for preparing a single-mode gallium arsenide-based quantum dot laser, the method comprising:
growing a silicon dioxide mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, performing primary standard photoetching on the mask thin layer to transfer the pattern of the high-order grating on the photoetching plate to positive photoresist, preparing a surface high-order grating groove by taking the photoresist as a mask and adopting a dry etching method to etch the mask thin layer, the contact layer and the upper limiting layer, and corroding the residual mask thin layer;
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, performing secondary standard photoetching on the mask thin layer to transfer the pattern of the strip-shaped ridge waveguide on the photoetching plate onto positive photoresist, and etching the mask thin layer, the contact layer and the upper limiting layer by using the photoresist as a mask and adopting a dry method to form the strip-shaped ridge waveguide;
growing a mask thin layer on the P surface of the gallium arsenide-based epitaxial wafer, carrying out three times of standard photoetching on the mask thin layer to transfer an electrical injection window pattern on a photoetching plate onto negative photoresist, taking the photoresist as a mask and etching the mask thin layer by adopting a dry method to form an electrical injection window;
performing four times of standard photoetching on the P surface of the gallium arsenide-based epitaxial wafer and stripping photoresist to form a P-surface ohmic contact electrode;
manufacturing an ohmic contact electrode on the N-type substrate on the back of the gallium arsenide-based epitaxial wafer; and
and (3) cleaving the laser comprising the gain region and the high-order grating region on the GaAs-based epitaxial wafer, and packaging the laser.
2. The method of claim 1, wherein growing a thin mask layer by chemical vapor deposition comprises:
growing SiO on P surface of GaAs-based epitaxial wafer by plasma enhanced chemical vapor deposition2Mask filmGrowing Si on P surface of GaAs-based epitaxial wafer by thin layer or low-pressure chemical vapor deposition3N4And (5) masking the thin layer.
3. The method of claim 1, wherein the step of performing a standard photolithography on the mask thin layer to transfer the pattern of the high-order grating on the mask to a positive photoresist, the step of using the photoresist as a mask and dry etching the mask thin layer, the contact layer and the upper confinement layer to form a surface high-order grating trench, and the step of etching off the remaining mask thin layer comprises:
performing one-time standard photoetching, and transferring the pattern of the high-order grating on the photoetching plate onto the positive photoresist to ensure that the direction of the high-order grating is vertical to the crystal direction of the surface of the epitaxial wafer;
use of Ar in dry etching2、CF4Or CHF3Etching the mask thin layer by gas, wherein the etching depth is 200-1000 nm;
then with a gas of Cl2And BCl3And etching the contact layer and the upper limiting layer, wherein the etching depth is 1-5 mu m, and preparing a surface high-order grating groove, wherein the prepared surface high-order grating meets the following requirements:
Figure FDA0002976834200000021
Figure FDA0002976834200000022
∧＝ds+dw
wherein d issIs the width of the single grating etched groove, dwIs the unetched width of a single grating, nsIs the effective refractive index of the etched region, nwIs the effective refractive index of the un-etched region, p and q are integers, p + q +1 is the grating order, lambda is the Bragg wavelength corresponding to the grating, the loss corresponding to the grating at the wavelength is the lowest, and lambda represents the grating period.
4. The method of claim 1, wherein performing a quadratic standard lithography on the thin mask layer to transfer the pattern of the slab ridge waveguide onto a positive photoresist comprises: and performing secondary standard photoetching, and transferring the pattern of the strip-shaped ridge waveguide on the photoetching plate onto positive photoresist, wherein the direction of the ridge waveguide is vertical to the direction of the grating and is parallel to the direction of the crystal direction.
5. The method of claim 1, wherein the step of performing four times of standard lithography on the P-side of the epitaxial wafer and stripping the photoresist to form a P-side ohmic contact electrode comprises:
and performing four times of standard photoetching, transferring the electrode pattern on the photoetching plate to negative photoresist, sputtering or evaporating a metal layer on the epitaxial wafer with the photoresist, and finally soaking and stripping the photoresist by adopting organic solution to form a P-surface ohmic contact electrode.
6. The method of claim 1, wherein the step of forming an ohmic contact electrode on the N-type substrate on the back of the gaas-based epitaxial wafer comprises:
and thinning and polishing the N-type substrate on the back of the gallium arsenide-based epitaxial wafer, manufacturing an N-surface ohmic contact electrode by evaporating metal, and alloying the P surface and the N surface ohmic contact electrodes.
7. The method of claim 6, wherein the step of thinning and polishing the N-type substrate on the back side of the gaas-based epitaxial wafer is performed to fabricate an N-side ohmic contact electrode by evaporating metal, and the step of alloying the N-side ohmic contact electrode comprises:
thinning and polishing the N-type substrate on the back of the epitaxial wafer to 70-200 mu m;
manufacturing an N-surface ohmic contact electrode by evaporating metal Au/Ge/Ni or Cr/Au, and then alloying the P-surface ohmic contact electrode and the N-surface ohmic contact electrode at the temperature of between 200 and 600 ℃ based on nitrogen protection, wherein the alloying time is between 30 seconds and 5 minutes.
8. The method of claim 1, wherein the cleaving the gaas-based epitaxial wafer to form a laser including a gain region and a high-order grating region, and packaging the laser comprises:
and the area of the gallium arsenide epitaxial wafer without the grating is a gain area, a tube core comprising the gain area and the high-order grating area is cleaved by using a nicking tool according to the cleavage surface of the gallium arsenide-based epitaxial wafer, the tube core is sintered on a copper heat sink to package the laser, and then the electrode is led to complete the laser package.
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