CN115832868A - Method for manufacturing double-grating semiconductor laser - Google Patents
Method for manufacturing double-grating semiconductor laser Download PDFInfo
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- CN115832868A CN115832868A CN202211730474.2A CN202211730474A CN115832868A CN 115832868 A CN115832868 A CN 115832868A CN 202211730474 A CN202211730474 A CN 202211730474A CN 115832868 A CN115832868 A CN 115832868A
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Abstract
The invention provides a manufacturing method of a double-grating semiconductor laser, which comprises the following steps: growing a first quantum well material layer, a first grating material layer, a spacing layer and a second grating material layer on the upper surface of the substrate in sequence to form the approximate outline of the laser, and dividing the laser into a distributed reflector region and a distributed feedback region; removing the second grating material layer of the distributed feedback area; respectively manufacturing a first grating and a second grating in the distributed reflector area and the distributed feedback area; growing a cladding material on the first grating and the second grating; and manufacturing a first P electrode on the cladding material of the distributed feedback area and manufacturing a first N electrode on the lower surface of the substrate.
Description
Technical Field
The invention relates to the field of optoelectronic devices, in particular to a manufacturing method of a double-grating semiconductor laser.
Background
The high-power narrow-linewidth semiconductor laser has important application in the fields of optical fiber communication, free space optical communication, laser radar and the like. The spectral line width of the semiconductor laser is inversely proportional to the coupling strength of the grating, and the larger the coupling strength of the grating is, the more beneficial the line width of the laser is to be reduced.
However, the grating coupling effect of Distributed Feedback (DFB) lasers is too strong to improve the light emitting power, so that the grating parameters need to be optimized according to the different influences on the two aspects of the power and the line width characteristics of the lasers.
Disclosure of Invention
In view of the above problems, the present invention provides a method for manufacturing a double-grating semiconductor laser, including: growing a first quantum well material layer, a first grating material layer, a spacing layer and a second grating material layer on the upper surface of a first substrate in sequence to form the approximate outline of the laser, and dividing the laser into a distributed reflector region and a distributed feedback region;
removing the second grating material layer of the distributed feedback area;
respectively manufacturing a first grating and a second grating in the distributed reflector area and the distributed feedback area;
growing a cladding material on the first grating and the second grating;
and forming a first P electrode on the cladding material of the distributed feedback region and forming a first N electrode on the lower surface of the first substrate.
According to an embodiment of the present invention, the manufacturing of the first grating in the distributed mirror region includes:
and sequentially etching the second grating material layer, the spacing layer and the first grating material layer by using a wet etching method to obtain the first grating.
According to an embodiment of the present invention, the manufacturing of the first grating in the distributed mirror region further includes:
and only etching the second grating material layer by using a wet etching method to obtain the first grating.
According to an embodiment of the present invention, the manufacturing of the second grating in the distributed feedback region includes:
and sequentially etching the spacing layer and the first grating material layer by using a wet etching method to obtain the second grating.
According to an embodiment of the present invention, the method for manufacturing a double-grating semiconductor laser further includes:
sequentially growing a waveguide material layer, a second quantum well material layer and a third grating material layer on the upper surface of a second substrate to form the approximate outline of the laser, and dividing the laser into a distributed mirror region and a distributed feedback region;
sequentially removing the third grating material layer and the second quantum well material layer in the distributed mirror region;
respectively manufacturing a third grating and a fourth grating in the distributed reflector area and the distributed feedback area;
growing a cladding material on the third grating and the fourth grating until the height of the cladding material in the whole laser is at the same level;
and forming a second P-electrode on the cladding material of the distributed feedback region and forming a second N-electrode on a lower surface of the second substrate.
According to an embodiment of the present invention, the manufacturing of the third grating in the distributed mirror region includes:
and etching the waveguide material layer in the distributed reflector region by using a wet etching method to obtain the third grating.
According to an embodiment of the present invention, the manufacturing of the fourth grating in the distributed feedback region includes:
and etching the third grating material layer in the distributed feedback area by using a wet etching method to obtain the fourth grating.
According to an embodiment of the present invention, one or more phase-shifted grating structures are introduced in the second grating and the fourth grating, respectively.
According to an embodiment of the present invention, in the case where only the second grating material layer is etched by the wet etching method to obtain the first grating, a thickness of the second grating material layer is greater than a thickness of the first grating material layer.
According to an embodiment of the present invention, a thickness of the waveguide material layer is greater than a thickness of the third grating material layer.
According to the embodiment of the invention, by providing the method for manufacturing the double grating structure, the relative height of the double grating is controlled by etching a plurality of layer structures, so that the effective refractive index of the first grating to light is larger than that of the second grating to light, and the feedback capacity of the first grating is larger than that of the second grating; the method provided by the invention avoids the technical defect that the distributed reflector (DBR) optical feedback area can be obtained only by etching the active layer material of the quantum well in the prior art, and simultaneously realizes the monolithic integration of the DBR reflector into the distributed feedback laser, thereby optimizing the power and line width characteristics of the laser.
Drawings
The foregoing and other objects, features and advantages of the invention will be apparent from the following description of embodiments of the invention, which proceeds with reference to the accompanying drawings, in which:
fig. 1 schematically shows a flow chart of a method of fabricating a dual-grating semiconductor laser according to a first embodiment of the present invention;
fig. 2 schematically shows a structural view obtained after some of the manufacturing methods of a double-grating semiconductor laser according to the first embodiment of the present invention are performed;
fig. 3 schematically shows a flow chart of a method of fabricating a dual-grating semiconductor laser according to a second embodiment of the present invention;
fig. 4 schematically shows a structural diagram obtained after some of the manufacturing methods of a dual-grating semiconductor laser according to the second embodiment of the present invention are performed.
In the above drawings, corresponding reference numerals are explained as follows:
11: a first substrate;
12: a first quantum well material layer;
13: a first grating material layer;
14: a spacer layer;
15: a second grating material layer;
16: a first cladding material;
17: a first P electrode;
18: a first N electrode;
21: a second substrate;
22: a waveguide material layer;
23: a second quantum well material layer;
24: a third grating material layer;
25: a second cladding material;
26: a second P electrode;
27: a second N electrode;
DBR section: a distributed mirror region;
DFB area: a distributed feedback area;
g1: a first grating;
g2: a second grating;
g3: a third grating;
g4: and a fourth grating.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It is noted that the terms used herein should be interpreted as having a meaning that is consistent with the context of this specification and should not be interpreted in an idealized or overly formal sense.
In those instances where a convention analogous to "at least one of A, B, and C, etc." is used, in general such a construction is intended in the sense one having skill in the art would understand the convention (e.g., "a system having at least one of A, B, and C" would include but not be limited to systems that have A alone, B alone, C alone, A and B together, A and C together, B and C together, and/or A, B, and C together, etc.).
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Another method for improving the linewidth and noise characteristics of a laser is to integrate a distributed reflector (DBR) optical feedback region in the laser, so that the laser can operate in the short wavelength region (short wavelength direction of the reflection peak) of the reflection spectrum of the DBR region, thereby effectively reducing the linewidth and noise of the laser. However, the process for integrating the DBR reflective region in the DFB laser is complex, for example, the reported laser etches the quantum well active material to obtain the DBR mirror, and the process is not favorable for the device to obtain the indexes such as reliability in the following process.
Fig. 1 schematically shows a flowchart of a method for fabricating a dual-grating semiconductor laser according to a first embodiment of the present invention.
As shown in fig. 1, a first embodiment of the present invention provides a method for fabricating a dual-grating semiconductor laser, which may include steps S101 to S105.
In step S101, a first quantum well material layer 12, a first grating material layer 13, a spacer layer 14, and a second grating material layer 15 are sequentially grown on the upper surface of the first substrate 11 to form a rough profile of the laser, and the laser is divided into a Distributed mirror (DBR) region and a Distributed Feedback (DFB) region.
In operation S102, the second grating material layer 15 in the distributed feedback region is removed by using a wet etching method.
According to an embodiment of the present invention, when a wet etching technique is adopted, the material of the spacer layer 14 may be used as an etching stop layer material, and the etching of the second grating material layer 15 in the distributed feedback region automatically stops on the material of the spacer layer 14.
In operation S103, a wet etching method is used to fabricate a first grating G1 and a second grating G2 in the distributed mirror region and the distributed feedback region, respectively.
According to the embodiment of the invention, the second grating G2 is manufactured in the distributed feedback area, and the method comprises the following steps:
and sequentially etching the spacing layer 14 and the first grating material layer 13 by using a wet etching method to obtain a second grating G2.
According to the embodiment of the invention, the first grating G1 is manufactured in the distributed mirror region, and the method comprises the following steps:
and sequentially etching the second grating material layer 15, the spacing layer 14 and the first grating material layer 13 by using a wet etching method to obtain the first grating G1.
At this time, the composition materials of the first grating G1 include the materials of the second grating material layer 15, the spacer layer 14 and the first grating material layer 13, and the height of the first grating G1 can reach the sum of the thicknesses of the three layers of materials; therefore, at the same duty ratio, the optical feedback capability of the first grating G1 is greater than that of the second grating G2, thereby providing stronger beneficial feedback to the laser.
According to the embodiment of the present invention, the manufacturing of the first grating G1 in the distributed mirror region further includes:
and etching only the second grating material layer 15 by using a wet etching method to obtain the first grating G1.
According to the embodiment of the present invention, in the case where only the second grating material layer 15 is etched by using a wet etching method to obtain the first grating G1, the thickness of the second grating material layer 15 is greater than the thickness of the first grating material layer 13.
According to the embodiment of the invention, when the materials constituting the two gratings are the same, the grating with the large height has strong corresponding optical feedback capability, and when the two gratings have the same height, the larger the band gap value of the material constituting the grating is, the larger the corresponding refractive index is, thereby leading to stronger corresponding optical feedback capability.
That is, in the case where the material types of the first grating material layer 13 and the second grating material layer 15 are the same, the height of the first grating G1 is larger than the height of the second grating G2; or alternatively
In the case where the thicknesses of the first grating material layer 13 and the second grating material layer 15 are the same, the material band gap of the second grating material layer 15 is larger than that of the first grating material layer 13; thereby ensuring that the optical feedback capacity of the first grating G1 is greater than that of the second grating G2.
In operation S104, a first cladding material 16 is grown over the first grating G1 and the second grating G2.
In step S105, a first P electrode 17 is formed on the cladding material of the distributed feedback region and a first N electrode 18 is formed on the lower surface of the first substrate 11.
Fig. 2 schematically shows a structural diagram obtained after some of the manufacturing methods of a dual-grating semiconductor laser according to the first embodiment of the present invention are performed.
Referring to fig. 1, (a) in fig. 2 represents a structural diagram obtained after step S101 is executed; fig. 2 (b) is a diagram representing a structural diagram obtained after step S102 is executed; fig. 2 (c) is a diagram representing a structural diagram obtained after step S103 is executed; fig. 2 (d) is a diagram showing a configuration diagram obtained after the execution of step S104 to step S105.
Fig. 3 schematically shows a flowchart of a method of fabricating a dual-grating semiconductor laser according to a second embodiment of the present invention.
As shown in fig. 3, a second embodiment of the present invention provides a method for fabricating a dual-grating semiconductor laser, which may include steps S301 to S305.
In operation S301, a waveguide material layer 22, a second quantum well material layer 23, and a third grating material layer 24 are sequentially grown on the upper surface of the second substrate 21 to form a rough outline of the laser, and the laser is divided into a Distributed mirror (DBR) region and a Distributed Feedback (DFB) region.
In operation S302, the third grating material layer 24 and the second quantum well material layer 23 of the distributed mirror region are sequentially removed.
In operation S303, a third grating G3 and a fourth grating G4 are fabricated in the distributed mirror region and the distributed feedback region, respectively.
According to the embodiment of the invention, the third grating G3 is manufactured in the distributed mirror region, and the method comprises the following steps: and etching the waveguide material layer 22 in the distributed reflector region by using a wet etching method to obtain the third grating G3.
According to the embodiment of the invention, the fourth grating G4 is manufactured in the distributed feedback area, and the method comprises the following steps: and etching the third grating material layer 24 in the distributed feedback area by using a wet etching method to obtain a fourth grating G4.
According to an embodiment of the present invention, in the case where the kind of material constituting the third grating material layer 24 is the same as the kind of material of the waveguide material layer 22, the thickness of the waveguide material layer 22 is ensured to be greater than the thickness of the third grating material layer 24; or under the condition that the thickness of the waveguide material layer 22 is the same as that of the third grating material layer 24, the material band gap constituting the waveguide material layer 22 is ensured to be larger than that of the third grating material layer 24, so that the refractive index of the waveguide material layer 22 to light is ensured to be larger than that of the third grating material layer 24 to light, the optical feedback capability of the third grating G3 is further ensured to be larger than that of the fourth grating G4, and the line width characteristic of the prepared laser is effectively improved.
In operation S304, the second cladding material 25 is grown over the third grating G3 and the fourth grating G4 until the height of the cladding material in the entire laser is at the same level.
In operation S305, a second P-electrode 26 is formed on the cladding material of the distributed feedback region and a second N-electrode 27 is formed on the lower surface of the second substrate 21.
According to the embodiment of the invention, in order to improve the yield of single longitudinal mode of laser light emission, one or more phase-shift grating structures are respectively introduced into the second grating G2 and the fourth grating G4.
According to the embodiment of the invention, the period of the grating in the distributed mirror region and the distributed feedback region is changed, so that the working wavelength (determined by the grating in the DFB region) of the laser is positioned in the short wavelength direction of the reflection peak of the DBR light reflection spectrum, and the spectral line width of the device is reduced.
Fig. 4 schematically shows a structural view obtained after some of the manufacturing methods of a dual-grating semiconductor laser according to the second embodiment of the present invention are performed.
Referring to fig. 3, (a) in fig. 4 represents a structural diagram obtained after step S301 is executed; fig. 4 (b) is a diagram representing a structural diagram obtained after step S302 is executed; fig. 4 (c) is a diagram showing a configuration diagram obtained after the execution of steps S303 to S305.
In the third embodiment of the present invention, on the basis of the first embodiment, after the first cladding material 16 is grown, the first contact material is grown; in order to reduce the current diffusion to the distributed mirror region, removing the first contact layer material of the distributed mirror region by using a wet etching method; the third P-electrode is formed on the first contact layer material of the distributed feedback region, and the rest of the manufacturing process is the same as that of the first embodiment.
In the fourth embodiment of the present invention, on the basis of the second embodiment, after the second cladding material 25 is grown, the second contact layer material is continuously grown; in order to reduce the current diffusion to the distributed mirror region, removing the second contact layer material of the distributed mirror region by using a wet etching method; the fourth P electrode is formed on the second contact layer material of the distributed feedback region, and the remaining manufacturing process is the same as that of the second embodiment.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for manufacturing a double-grating semiconductor laser comprises the following steps:
growing a first quantum well material layer, a first grating material layer, a spacing layer and a second grating material layer on the upper surface of a first substrate in sequence to form the approximate outline of the laser, and dividing the laser into a distributed reflector region and a distributed feedback region;
removing the second grating material layer of the distributed feedback area;
respectively manufacturing a first grating and a second grating in the distributed reflector area and the distributed feedback area;
growing a cladding material over the first grating and the second grating;
and manufacturing a first P electrode on the cladding material of the distributed feedback area and manufacturing a second N electrode on the lower surface of the first substrate.
2. The method of claim 1, wherein fabricating a first grating in the distributed mirror region comprises:
and sequentially etching the second grating material layer, the spacing layer and the first grating material layer by using a wet etching method to obtain the first grating.
3. The method of claim 1, wherein fabricating a first grating in the distributed mirror region further comprises:
and etching only the second grating material layer by using a wet etching method to obtain the first grating.
4. The method of claim 1, wherein fabricating a second grating in the distributed feedback region comprises:
and sequentially etching the spacing layer and the first grating material layer by using a wet etching method to obtain the second grating.
5. The method of claim 1, further comprising:
sequentially growing a waveguide material layer, a second quantum well material layer and a third grating material layer on the upper surface of a second substrate to form the approximate outline of the laser, and dividing the laser into a distributed reflector region and a distributed feedback region;
sequentially removing the third grating material layer and the second quantum well material layer in the distributed reflector region;
respectively manufacturing a third grating and a fourth grating in the distributed reflector area and the distributed feedback area;
growing a cladding material over the third grating and the fourth grating until the height of the cladding material is at the same level throughout the laser;
and manufacturing a second P electrode on the cladding material of the distributed feedback area and manufacturing a second N electrode on the lower surface of the second substrate.
6. The method of claim 5, wherein fabricating a third grating in the distributed mirror region comprises:
and etching the waveguide material layer in the distributed reflector region by using a wet etching method to obtain the third grating.
7. The method of claim 5, wherein fabricating a fourth grating in the distributed feedback region comprises:
and etching the third grating material layer in the distributed feedback area by using a wet etching method to obtain the fourth grating.
8. The method according to claim 4 or 7, wherein one or more phase-shifted grating structures are introduced in the second grating and the fourth grating, respectively.
9. The method according to claim 3 or 4, wherein, in the case that the first grating is obtained by etching only the second grating material layer by using a wet etching method, the thickness of the second grating material layer is greater than that of the first grating material layer.
10. The method of claim 5, wherein the waveguide material layer has a thickness greater than a thickness of the third grating material layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116387973A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
| CN116387974A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
| CN116387976A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387975A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
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2022
- 2022-12-30 CN CN202211730474.2A patent/CN115832868A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116387973A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
| CN116387974A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
| CN116387976A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387975A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
| CN116387974B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser based on butt-joint growth process |
| CN116387976B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Preparation method of edge-emitting laser with embedded multi-order grating |
| CN116387973B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
| CN116387975B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser with adjustable lasing direction |
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