CN115377792A - Monolithic integrated internal feedback narrow linewidth semiconductor laser - Google Patents

Monolithic integrated internal feedback narrow linewidth semiconductor laser Download PDF

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CN115377792A
CN115377792A CN202211150953.7A CN202211150953A CN115377792A CN 115377792 A CN115377792 A CN 115377792A CN 202211150953 A CN202211150953 A CN 202211150953A CN 115377792 A CN115377792 A CN 115377792A
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narrow
feedback
laser
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band filtering
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冯琛
周帅
廖苗苗
唐佳
罗晶
段利华
张靖
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CETC 44 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/509—Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Abstract

The invention relates to a monolithic integrated internal feedback narrow linewidth semiconductor laser which comprises a substrate, wherein an active region and a passive region which are formed by the same material system are arranged on the substrate, the active region is provided with an optical laser gain amplification structure, and the passive region is provided with a narrow-band filtering mode selection structure, a forward optical feedback structure and a backward optical feedback structure. According to the narrow-linewidth semiconductor laser based on the same semiconductor material system active and passive mixed growth manufacturing platform, the low loss characteristic of a passive region to light and the delay characteristic of a narrow-band filtering mode selection structure to light are utilized, so that the loss in a cavity is reduced, and the effective cavity length is increased, so that the linewidth of the laser is reduced; the problems of large loss, long cavity length, large line width and the like of the conventional internal feedback narrow linewidth semiconductor laser are solved, and the problem of high difficulty in heterogeneous integration of an external feedback narrow linewidth laser can be avoided.

Description

Monolithic integrated internal feedback narrow linewidth semiconductor laser
Technical Field
The invention belongs to the technical field of semiconductor lasers, and relates to a monolithic integrated internal feedback narrow linewidth semiconductor laser.
Background
The narrow linewidth semiconductor laser has the advantages of narrow linewidth, low phase noise, high coherence, small volume, low power consumption, direct current drive and the like, and is widely applied to the fields of optical communication and optical detection, such as high-speed coherent optical communication, distributed sensing, laser radar and the like. For narrow linewidth semiconductor lasers with kHz magnitude and sub-kHz magnitude spectral linewidths, the adopted schemes can be generally divided into two types: one is an internal feedback laser scheme, such as DFB lasers, DBR lasers; the other is an external cavity feedback laser scheme, such as the gain chip is integrated with the SOI external cavity feedback chip, the gain chip is aligned with the FBG, and the like. However, the external cavity feedback laser scheme involves at least two material systems, and the complexity and instability caused by the alignment coupling of the two material systems are difficult problems in the industry at present. The traditional internal feedback monolithic integration narrow linewidth laser is mainly based on a DFB/DBR laser and is limited by the larger absorption of InP-based active materials, and the scheme has limitations for realizing narrow spectral linewidth. The longer the laser cavity is, the longer the photon life is, and the narrower the linewidth is; meanwhile, the smaller the laser loss, the narrower the linewidth. The longer the active region is, the greater the absorption of light by the active material is, and the greater the loss in the laser cavity is, so that it is difficult to realize the kHz-order spectral linewidth of the DFB/DBR laser.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: a monolithically integrated internal feedback narrow linewidth semiconductor laser with low intracavity loss is provided.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides a monolithic integration internal feedback narrow linewidth semiconductor laser, includes the substrate, be provided with active area and passive region through the formation of same material system on the substrate, the active area is provided with light laser gain amplifier structure, the passive region is provided with narrow band filtering mode selection structure, preceding optical feedback structure and back optical feedback structure, preceding optical feedback structure passes through the optical waveguide and is connected with the first end of light laser gain amplifier structure or the first end direct butt joint of preceding optical feedback structure and light laser gain amplifier structure, the second end of light laser gain amplifier structure passes through the optical waveguide and is connected with the first end of narrow band filtering mode selection structure, the second end of narrow band filtering mode selection structure passes through the optical waveguide and is connected with back optical feedback structure.
Further, the active region adopts a bulk material structure, a multiple quantum well structure or a quantum dot structure; the length of the optical laser gain amplification structure along the light propagation direction is greater than or equal to 200 μm.
Furthermore, the preparation of the active region and the passive region in a partition mode depends on an active and passive mixed growth platform, a part of the active region is removed by adopting a butt joint growth technology, and a passive material is continuously grown on the removed part to form the passive region.
Furthermore, the narrow-band filtering mode selection structure adopts a micro-ring structure, a whispering gallery structure or a photonic crystal structure, and has a phase delay function.
Further, the high transmission spectrum of the narrow-band filtering mode selection structure is within the gain spectrum range of the laser gain amplification structure, and the 3dB spectrum width of the high transmission spectrum is less than 1nm.
Further, the forward optical feedback structure and the backward optical feedback structure are combined to form a laser resonant cavity for providing intra-cavity feedback; the forward optical feedback structure and the backward optical feedback structure provide an intra-cavity gain larger than an intra-cavity loss; the high reflectance spectrum of the resonant cavity comprises a high transmittance spectrum position of a narrow-band filtering mode selection structure.
Furthermore, the high transmittance spectrum of the narrow-band filtering mode selection structure has 4 or less spectral peaks in the high reflection spectrum of the laser resonant cavity.
Furthermore, the length of the whole optical waveguide of the laser is optimally designed by matching with the length of the optical laser gain amplification structure, so that the number of longitudinal modes of the laser resonant cavity included in the high reflection spectrum of the laser resonant cavity is equal to or less than 4.
Furthermore, the narrow-band filtering mode selection structure is a micro-ring narrow-band filtering structure adopting a micro-ring structure; the forward optical feedback structure and the backward optical feedback structure are both realized by surface gratings, or the forward optical feedback structure and the backward optical feedback structure are both realized by built-in gratings.
Furthermore, the narrow-band filtering and mode selecting structure is a photonic crystal narrow-band filtering structure adopting a photonic crystal structure, and the photonic crystal narrow-band filtering structure is realized by introducing line defects, point defects or unconventional lattice constants based on the narrow-band filtering principle of a photonic crystal microcavity; the forward optical feedback structure and the backward optical feedback structure are both realized through a photonic crystal structure; the forward optical feedback structure and the backward optical feedback structure both utilize the photonic band gap characteristics of the photonic crystal structure to realize the reflection spectrum and the reflectivity required by the forward optical feedback structure and the backward optical feedback structure.
The monolithic integrated internal feedback narrow linewidth semiconductor laser is based on the same semiconductor material system active and passive mixed growth manufacturing platform, a laser gain amplification structure is designed and prepared in an active area, a narrow-band filtering mode selection structure and an optical feedback structure are designed and prepared in a passive area, and the effective cavity length is increased while the loss in a cavity is reduced by utilizing the low-loss transmission characteristic of the passive area and the delay characteristic of the narrow-band filtering mode selection structure to light, so that the linewidth of the laser is reduced; the loss of the internal feedback laser is reduced while the equivalent cavity length of the internal feedback laser is increased, and the monolithic integrated internal feedback narrow linewidth semiconductor laser is realized. The problems of large loss, long cavity, large line width and the like of the conventional internal feedback narrow linewidth semiconductor laser are solved, and the problem of high difficulty in heterogeneous integration of an external feedback narrow linewidth laser can be solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic structural diagram of a preferred embodiment of a monolithically integrated internal feedback narrow linewidth semiconductor laser of the present invention.
FIG. 2 is a schematic diagram of the internal gain and reflection spectra of a laser resonator.
Fig. 3 is a schematic structural view of embodiment 1.
Fig. 4 (a) is a schematic cross-sectional view after forming an active region on a substrate and before forming no inactive region.
Fig. 4 (b) is a schematic cross-sectional view after forming an inactive region on a substrate.
Fig. 5 is a schematic structural view of embodiment 2.
The meaning of the reference symbols in the drawings is:
laser gain amplification structure-SOA; a narrow-band filtering mode selection structure-Filter; forward optical feedback structure-FR; backward optical feedback structure-BR; a first optical waveguide-WG 1; a second optical waveguide-WG 2; a third optical waveguide-WG 3;
a substrate-100; an active region-101; an inactive area-102;
micro-ring narrow-band filtering structure-110; a feed-forward grating structure-111; backward feedback grating structure-112;
photonic crystal narrowband filtering structure-120; a feed-forward photonic crystal structure-121; a back-fed photonic crystal structure-122.
Detailed Description
The embodiments of the invention are explained below by means of specific examples, the illustrations provided in the following examples are merely illustrative of the basic idea of the invention, and features in the following examples and examples can be combined with one another without conflict.
As shown in fig. 1, a preferred embodiment of the monolithically integrated internal feedback narrow linewidth semiconductor laser of the present invention comprises a substrate 100, wherein an active region 101 and an inactive region 102 formed by the same material system are disposed on the substrate 100. The material system may be a semiconductor light emitting material system such as GaAs/InP/Ge-Si/GaN/GaSb, and the active region 101 may adopt a bulk material structure, a multiple quantum well structure, or a quantum dot structure, which can provide population inversion. The partition preparation of the active region 101 and the passive region 102 relies on an active-passive hybrid growth platform, and the passive region 102 can be formed by removing a part of the active region 101 by using a butt-joint growth technique and continuing to grow a passive material after removing the part.
The monolithic integrated internal feedback narrow linewidth semiconductor laser comprises four main functional elements, namely a laser gain amplification structure SOA, a narrow-band filtering and mode selection structure Filter, a forward optical feedback structure FR and a backward optical feedback structure BR. It should be noted that fig. 1 only shows the connection relationship between the above four main functional elements, and does not limit the relative positional relationship between the elements. The forward optical feedback structure FR is connected with a first end of the laser gain amplification structure SOA through a first optical waveguide WG1 or the forward optical feedback structure FR is directly butted with the first end of the laser gain amplification structure SOA, a second end of the laser gain amplification structure SOA is connected with a first end of the narrow-band filtering mode selection structure Filter through a second optical waveguide WG2, and a second end of the narrow-band filtering mode selection structure Filter is connected with the backward optical feedback structure BR through a third optical waveguide WG3.
The laser gain amplification structure SOA is used for providing optical gain. The narrow-band filtering mode selection structure Filter adopts a micro-ring structure, a echo wall structure or a photonic crystal structure, and has a phase delay function; the high transmission spectrum of the narrow-band filtering mode selection structure Filter is in the gain spectrum range of the SOA of the laser gain amplification structure, and the 3dB spectrum width of the high transmission spectrum is smaller than 1nm.
As shown in fig. 2, the forward optical feedback structure FR and the backward optical feedback structure BR form a laser cavity for providing intra-cavity feedback; the intracavity gain provided by the forward optical feedback structure FR and the backward optical feedback structure BR is larger than the intracavity loss; the high reflectance spectrum of the resonant cavity comprises the high transmittance spectrum position of a Filter with a narrow-band filtering mode selection structure. The spectral peak of the high transmittance spectrum of the narrow-band filtering mode selection structure Filter in the high reflection spectrum of the laser resonant cavity is equal to or less than 4. And the forward optical feedback structure FR and the backward optical feedback structure BR utilize a narrow-band filtering mode selection structure Filter to select a longitudinal mode formed by a laser resonant cavity and compress the line width of the laser.
The length of the whole optical waveguide of the laser (namely the sum of the lengths of the first optical waveguide WG1, the second optical waveguide WG2 and the third optical waveguide WG3, when the forward optical feedback structure FR is directly butted with the first end of the laser gain amplification structure SOA, the length of the first optical waveguide WG1 is 0) is optimally designed by matching with the length of the laser gain amplification structure SOA, so that the number of longitudinal modes of the laser resonant cavity included in the high reflection spectrum of the laser resonant cavity is equal to or less than 4.
The laser gain amplification structure SOA is located in the active region 101, the forward optical feedback structure FR, the backward optical feedback structure BR and the narrow-band filtering mode selection structure Filter are located in the passive region 102, the line width of the laser is further compressed by utilizing the low waveguide loss of the passive region 102 and the equivalent long cavity length effect of the narrow-band filtering mode selection structure Filter, and meanwhile, larger optical power output is guaranteed. The following is illustrated by two specific examples:
example 1
As shown in fig. 3, in the monolithically integrated internal feedback narrow linewidth semiconductor laser of this embodiment, the substrate 100 is an InP substrate, and the active region 101 is an InGaAsP multiple quantum well material, and generally includes 1 to 10 multiple quantum wells; the passive region 102 is an InP passive region. The narrow-band filtering mode selection structure Filter is a micro-ring narrow-band filtering structure 110 adopting a micro-ring structure; the forward optical feedback structure FR is a forward feedback grating structure 111 adopting a grating structure, and the backward optical feedback structure BR is a backward feedback grating structure 112 adopting a grating structure. The forward feedback grating structure 111 and the backward feedback grating structure 112 may be implemented by surface gratings, or may be implemented by built-in gratings. The surface grating has the advantages of no need of secondary epitaxy and simple process. The built-in grating has the advantages of high light feedback efficiency and easy realization of high-reflectivity feedback.
The modified Schawhow-Townes line width formula is shown below:
Figure BDA0003856342980000061
wherein, deltav is the spectral line width, gamma w Is a light limiting factor, v g Is group velocity, h is Planck constant, v is laser frequency, n sp Is a spontaneous emission factor, a i For intra-cavity losses, a m For cavity loss, a is the linewidth broadening factor, P 0 Is the output optical power.
The effective cavity length of the micro-ring narrow-band filtering structure 110 is calculated as follows:
Figure BDA0003856342980000062
wherein, lambda is the laser wavelength, beta is the propagation constant,
Figure BDA0003856342980000063
is the effective phase delay.
According to the modified Schawlow-Townes line width formula and the effective cavity length calculation formula of the micro-ring narrow-band filtering structure 110, the loss a in the cavity is reduced i The laser linewidth can be reduced. By using the passive region 102 for low-loss transmission of light, the cavity length is increased, and the loss a in the cavity is reduced i The spectral linewidth of the laser can be greatly reduced, and meanwhile, larger optical power output is ensured.
The preparation method of the monolithic integrated internal feedback narrow linewidth semiconductor laser of the embodiment is as follows:
as shown in fig. 4 (a), an n-InP buffer layer, a lower waveguide layer, an InGaAsP multiple quantum well layer, and an upper waveguide layer are grown all at once on the InP substrate.
As shown in fig. 4 (b), the InGaAsP mqw layer is etched by wet etching, and then an InP passive region is grown in a butt-joint manner.
The micro-ring narrow-band filtering structure 110 is prepared at the position of the passive region 102, the high transmission spectrum of the micro-ring narrow-band filtering structure 110 is within the gain spectrum range of the laser gain amplification structure SOA, and the 3dB spectrum width of the high transmission spectrum should be less than 1nm. The micro-ring narrow-band filtering structure 110 has a phase delay effect, and can be equivalent to an effect of increasing the effective cavity length, so that the effective cavity length of the laser can be increased under the condition of not increasing the physical length, and the line width of the laser can be further compressed.
The forward feedback grating structure 111 and the backward feedback grating structure 112 are prepared at the position of the passive region 102, the forward feedback grating structure 111 and the backward feedback grating structure 112 are combined to form a laser resonant cavity, and the high reflection spectrum of the resonant cavity should include the high transmission spectrum position of the micro-ring narrow-band filtering structure 110. The spectral peak of the high transmission spectrum of the micro-ring narrow-band filtering structure 110 in the high reflection spectrum of the laser resonant cavity is not more than 4.
And manufacturing a laser gain amplification structure SOA at the position of the active region 101. The length of the laser gain amplification structure SOA along the light propagation direction is greater than or equal to 200 μm.
And preparing a second optical waveguide WG2 for connecting the laser gain amplification structure SOA and the micro-ring narrow-band filtering structure 110 and a first optical waveguide WG1 for connecting the laser gain amplification structure SOA and the forward feedback grating structure 111. Of course, the laser gain amplification structure SOA may be directly butted with the feed-forward grating structure 111, so that the first optical waveguide WG1 is not required to be prepared.
A third optical waveguide WG3 for connecting the micro-ring narrowband filtering structure 110 and the backward feedback grating structure 112 is prepared. The length of the whole optical waveguide of the laser should be optimally designed by matching with the length of a laser gain amplification structure SOA, so that the number of longitudinal modes of the laser resonant cavity included in the high reflection spectrum of the resonant cavity is not more than 4. By means of setting a phase region or adjusting injection current and the like, longitudinal mode matching in the final resonant cavity can be achieved, and narrow linewidth laser output is achieved.
In this embodiment, an active and passive hybrid growth manufacturing platform is formed based on the same semiconductor material system, a laser gain amplification structure SOA is designed and prepared in an active region 101, a narrow band filtering mode selection structure Filter, a forward optical feedback structure FR and a backward optical feedback structure BR are designed and prepared in an inactive region 102, and by using the low loss transmission characteristic of the inactive region 102, the loss of an internal feedback laser is reduced while the equivalent cavity length of the internal feedback laser is increased, so that a monolithic integrated internal feedback narrow linewidth semiconductor laser is realized. The problems of large loss, long cavity, large line width and the like of the conventional internal feedback narrow linewidth semiconductor laser are solved, and the problem of high difficulty in heterogeneous integration of an external feedback narrow linewidth laser can be solved.
Example 2
As shown in fig. 5, the monolithically integrated internal feedback narrow linewidth semiconductor laser in the present embodiment is different from embodiment 1 in that: the narrow-band filtering and mode-selecting structure Filter is a photonic crystal narrow-band filtering structure 120 adopting a photonic crystal structure, the forward optical feedback structure FR is a forward feedback photonic crystal structure 121 adopting a photonic crystal structure, and the backward optical feedback structure BR is a backward feedback photonic crystal structure 122 adopting a photonic crystal structure. Other structures of the monolithically integrated internal feedback narrow linewidth semiconductor laser of the present embodiment may be the same as embodiment 1.
In this embodiment, the photonic crystal narrow-band filtering structure 120 is implemented by introducing line defects, point defects, or unconventional lattice constants based on the narrow-band filtering principle of the photonic crystal microcavity. The forward feedback photonic crystal structure 121 and the backward feedback photonic crystal structure 122 both utilize photonic band gap characteristics of the photonic crystal structures to realize the required reflection spectrum and reflectivity of the forward feedback photonic crystal structure 121 and the backward feedback photonic crystal structure 122. For example, the photonic band gap can be adjusted by changing the lattice constant, the number of periodic structures, the defect states, and the like of the photonic crystal structure, so as to achieve the desired reflection spectrum and reflectivity of the forward feedback photonic crystal structure 121 and the backward feedback photonic crystal structure 122. The working principle of this embodiment is the same as that of embodiment 1, and is not described herein again.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.

Claims (10)

1. A monolithic integrated internal feedback narrow linewidth semiconductor laser is characterized in that: the active area and the passive area are formed by the same material system, the active area is provided with an optical laser gain amplification structure, the passive area is provided with a narrow-band filtering mode selection structure, a forward optical feedback structure and a backward optical feedback structure, the forward optical feedback structure is connected with a first end of the optical laser gain amplification structure through an optical waveguide or is directly butted with the first end of the optical laser gain amplification structure, a second end of the optical laser gain amplification structure is connected with the first end of the narrow-band filtering mode selection structure through the optical waveguide, and the second end of the narrow-band filtering mode selection structure is connected with the backward optical feedback structure through the optical waveguide.
2. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 1 wherein: the active region adopts a bulk material structure, a multi-quantum well structure or a quantum dot structure; the length of the optical laser gain amplification structure along the light propagation direction is greater than or equal to 200 μm.
3. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 1 wherein: the partition preparation of the active area and the passive area depends on an active and passive mixed growth platform, a part of the active area is removed by adopting a butt joint growth technology, and a passive material is continuously grown on the removed part to form the passive area.
4. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 1 wherein: the narrow-band filtering mode selection structure adopts a micro-ring structure, a whispering gallery structure or a photonic crystal structure, and has a phase delay function.
5. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 1 wherein: the high transmission spectrum of the narrow-band filtering mode selection structure is in the gain spectrum range of the laser gain amplification structure, and the 3dB spectrum width of the high transmission spectrum is less than 1nm.
6. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 1 wherein: the forward optical feedback structure and the backward optical feedback structure are combined to form a laser resonant cavity for providing intra-cavity feedback; the forward optical feedback structure and the backward optical feedback structure provide an intra-cavity gain larger than an intra-cavity loss; the high reflectance spectrum of the resonant cavity comprises a high transmittance spectrum position of a narrow-band filtering mode selection structure.
7. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 6 wherein: the high transmittance spectrum of the narrow-band filtering mode selection structure has the spectral peaks equal to or less than 4 in the high reflection spectrum of the laser resonant cavity.
8. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in claim 7 wherein: the length of the whole optical waveguide of the laser is optimally designed by matching with the length of the optical laser gain amplification structure, so that the number of longitudinal modes of the laser resonant cavity included in the high reflection spectrum of the laser resonant cavity is equal to or less than 4.
9. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in any one of claims 1 to 8 wherein: the narrow-band filtering mode selection structure is a micro-ring narrow-band filtering structure adopting a micro-ring structure; the forward optical feedback structure and the backward optical feedback structure are both realized by surface gratings, or the forward optical feedback structure and the backward optical feedback structure are both realized by built-in gratings.
10. A monolithically integrated internal feedback narrow linewidth semiconductor laser as claimed in any one of claims 1 to 8 wherein: the narrow-band filtering and mode selecting structure is a photonic crystal narrow-band filtering structure adopting a photonic crystal structure, and the photonic crystal narrow-band filtering structure is realized by introducing line defects, point defects or unconventional lattice constants based on the narrow-band filtering principle of a photonic crystal microcavity; the forward optical feedback structure and the backward optical feedback structure are both realized through a photonic crystal structure; the forward optical feedback structure and the backward optical feedback structure both utilize the photonic band gap characteristics of the photonic crystal structure to realize the reflection spectrum and the reflectivity required by the forward optical feedback structure and the backward optical feedback structure.
CN202211150953.7A 2022-09-21 2022-09-21 Monolithic integrated internal feedback narrow linewidth semiconductor laser Pending CN115377792A (en)

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