CN116387974B - Preparation method of edge-emitting laser based on butt-joint growth process - Google Patents
Preparation method of edge-emitting laser based on butt-joint growth process Download PDFInfo
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 238000001312 dry etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of an edge-emitting laser based on a butt-joint growth process, which relates to the technical field of edge-emitting lasers and comprises the following steps: growing an epitaxial structure above a substrate to form a laser body, wherein two ends of the laser body along the x direction are respectively a light emitting end and a backlight end; etching a step at the light emitting end and/or the backlight end of the laser body, wherein the depth of the step is etched from the surface of the laser body to the upper part of the substrate; the second epitaxy is adopted to butt-joint and grow a first grating material at the step, so that a passive area is formed; etching a plurality of grating grooves which are arranged at intervals in the passive region, and filling second grating materials into the grating grooves according to the requirement; the second grating material and the first grating material around the second grating material form a multi-order grating embedded in the laser body. The edge-emitting laser manufactured by the manufacturing method has the advantages of extremely stable wavelength, small temperature drift and high peak power.
Description
Technical Field
The invention relates to the technical field of edge-emitting lasers, in particular to a preparation method of an edge-emitting laser based on a butt-joint growth process.
Background
Although the conventional edge-emitting laser has incomparable advantages in key parameters such as power density, the bottleneck problem of poor wavelength stability exists, because the wavelength of the edge-emitting laser can be changed along with the change of working current and temperature, and experiments prove that the wavelength of the edge-emitting laser can reach more than 0.28nm/K along with the temperature drift coefficient, so that the edge-emitting laser is limited in some application. In general, wavelength stabilization of an edge-emitting laser can achieve a certain degree of stabilization by controlling the temperature and the stability of the injection current, but wavelength locking is required to obtain higher stability. At present, the method for improving the wavelength stability of the edge-emitting laser mainly comprises the following two steps:
first, the external cavity feedback stabilizes the wavelength method. In the method, optical feedback such as gratings is utilized to control the frequency characteristic of a semiconductor, and most of the prior art realizes wavelength stability through a Volume Holographic Grating (VHG), a Volume Bragg Grating (VBG) or a Fiber Bragg Grating (FBG), but the requirements on the manufacturing process are strict, and the cost is high.
And secondly, stabilizing the wavelength in the inner cavity. The method integrates a wavelength stabilizing structure into the semiconductor laser, and realizes wavelength stabilization through the internal structure. There are commonly known distributed feedback lasers (DFB) and distributed bragg reflector lasers (DBR) methods. Both DBR and DFB lasers have relatively low output power, require complex secondary epitaxy techniques and complex grating fabrication techniques, and are costly to fabricate. However, the edge-emitting laser employing the internal wavelength stabilization method has better system compatibility and lower assembly cost than the edge-emitting laser employing the external wavelength stabilization method.
In order to solve the problems, the invention provides a preparation method of an edge-emitting laser based on a butt-joint growth process based on the design conception of stable wavelength of an inner cavity.
Disclosure of Invention
The invention provides a preparation method of an edge-emitting laser based on a butt-joint growth process, which mainly aims to solve the problems of low output power, complex preparation process and high manufacturing cost of the existing method for stabilizing the wavelength of an inner cavity of the edge-emitting laser.
The invention adopts the following technical scheme:
the preparation method of the edge-emitting laser based on the butt-joint growth process comprises the following steps:
(1) Growing an epitaxial structure above a substrate to form a laser body, wherein two ends of the laser body along the x direction are respectively a light emitting end and a backlight end;
(2) Etching a step at the light emitting end and/or the backlight end of the laser body, wherein the depth of the step is etched from the surface of the laser body to the upper part of the substrate;
(3) The second epitaxy is adopted to butt-joint and grow a first grating material at the step, so that a passive area is formed;
(4) Etching a plurality of grating grooves which are arranged at intervals in the passive region, and filling second grating materials into the grating grooves according to the requirement;
(5) The second grating material and the first grating material around the second grating material form a multi-order grating embedded in the laser body.
Further, in step (1), the epitaxial structure includes a buffer layer, an active region and a cap layer stacked from bottom to top, and the height of the inactive region is between the cap layer and the active region, so that an abdication step is formed between the surface of the inactive region and the surface of the cap layer.
Further, before etching the landing, a first etching mask is deposited in a non-etching area of the surface of the laser body; before etching the grating groove, a second etching mask is deposited on the surface of the passive area; and removing the first etching mask and the second etching mask after the grating groove is etched.
Further, the length L of the inactive region in the x-direction 1 At a spacing L of 30-50 μm between the inner edge of the first grating material and the inner edge of the inactive region 2 0-30 μm.
The calculation formula of the period length lambda of the multi-order grating is as follows:
wherein: n represents the grating order, λ represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
Further, the range of the grating order n is as follows: n is more than 1 and less than 100.
Further, the second grating material is air or SiO 2 SiNx, gaAs, inGaAsP or InP.
As a specific embodiment: the grating grooves are cylindrical grooves which are distributed at intervals along the y direction.
As a specific embodiment: the grating grooves are annular grooves which are distributed at intervals along the x direction, and the radius of the annular grooves which are distributed from inside to outside in sequence is gradually increased. In this embodiment, the light exit angle α of the laser body is adjusted by adjusting the grating order n of the multi-order grating.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a preparation method of an edge-emitting laser based on a butt-joint growth process, which has the advantages of extremely stable wavelength, small temperature drift and high peak power and solves the problems of low output power, complex preparation process and high manufacturing cost of the traditional inner cavity stable wavelength method.
Drawings
Fig. 1 is a perspective view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 2 is a cross-sectional view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 3 is a top view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 4 is a flowchart of a preparation of an edge-emitting laser according to an embodiment of the present invention.
Fig. 5 is a perspective view of an edge-emitting laser according to a second embodiment of the present invention.
Fig. 6 is a flowchart of a preparation of an edge-emitting laser according to a second embodiment of the present invention.
Fig. 7 is a perspective view of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 8 is a front view of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 9 is a top view of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 10 is a perspective view of an edge-emitting laser according to a fourth embodiment of the present invention.
In the figure: 1-a laser body; 11-substrate, 12-buffer layer; 13-an active region; 14-cap layer; 15-a landing; 16-inactive region; 17-giving way steps; 110. A first etching mask; 111-a second etching mask; 2-multi-order grating; 21-an annular column; epitaxial structure of 22-passive region; 23. a table He Zhu.
Detailed Description
Specific embodiments of the present invention will be described below with reference to the accompanying drawings. Numerous details are set forth in the following description in order to provide a thorough understanding of the present invention, but it will be apparent to one skilled in the art that the present invention may be practiced without these details.
Embodiment one:
as shown in fig. 1 to 4, the present embodiment provides a method for manufacturing an edge-emitting laser based on a butt-joint growth process, which includes the following steps:
(1) An epitaxial structure is grown over the substrate 11, thereby forming a laser body 1, and both ends of the laser body 1 in the x-direction are a light-emitting end and a backlight end, respectively. Specifically, the epitaxial structure includes a buffer layer 12, an active region 13, and a cap layer 14 stacked from bottom to top.
(2) A landing 15 is etched into the light exit end of the laser body 1, the landing 15 extending from the surface of the laser body 1 to a depth above the substrate 11. Specifically, the first etching mask 110 is first deposited in a non-etched region of the surface of the laser body 1 by an enhanced plasma chemical vapor deposition (PECVD), photolithography, and Reactive Ion Etching (RIE) process, and then the landing 15 is formed by an Inductively Coupled Plasma (ICP) etching and wet etching process. Preferably, the first etching mask 110 is SiNx/SiO 2 Etching masks or photoresists.
(3) The second epitaxy is used to butt-grow the first grating material at the landing 15, thereby forming the inactive region 16. Specifically, the first grating material is a lattice-matched semiconductor material, and the butt-joint growth is carried out by MOCVD secondary epitaxy. In this embodiment, the height of the inactive region 16 is between the cap layer 14 and the active region 13 of the epitaxial structure, so that an abdication step is formed between the surface of the inactive region 16 and the surface of the cap layer 14, so that the grating groove is etched in the inactive region 16 later.
(4) Etched in the inactive region 16 are a plurality of spaced apartAnd filling a second grating material in the grating groove. The grating grooves in this embodiment are preferably annular grooves arranged at intervals along the x-direction, and the annular grooves are filled with the second grating material to form annular columns 21. Specifically, first, a second etching mask 111 with a periodically arranged annular pillar pattern is formed on the surface of the passive region 16 by an enhanced plasma chemical vapor deposition (PECVD), photolithography, and Reactive Ion Etching (RIE) process; then forming a plurality of annular grooves through dry etching and wet etching processes; finally, the first etching mask 110 and the second etching mask 111 are removed. The second etching mask 111 is also preferably SiNx/SiO 2 The etching mask or photoresist, and thus the first etching mask 110 and the second etching mask 111 may be removed simultaneously using BOE. And after the annular groove is etched, filling a second grating material into the annular groove according to the requirement. When air is selected as the second grating material, no filling process is required. When other materials are selected, deposition may be performed by enhanced plasma chemical vapor deposition (PECVD) or MOCVD.
(5) The annular column 21 and the epitaxial structure 22 of the passive region at the periphery thereof together form a multi-order grating embedded in the laser body 1.
The preparation method can integrate the multi-order grating 2 in the side-emitting laser, thereby realizing wavelength selection and ensuring the wavelength of the side-emitting laser to be extremely stable. The following detailed analysis is performed in connection with the structure of an edge-emitting laser having an embedded multi-order grating, so as to supplement the details of the above-mentioned manufacturing method.
As shown in fig. 1 to 3, the laser body 1 in this embodiment includes a substrate 11 and an epitaxial structure disposed above the substrate 11. The epitaxial structure includes a buffer layer 12, an active region 13 and a cap layer 14 stacked from bottom to top. And the two end surfaces of the epitaxial structure along the x direction are respectively provided with an HR coating and an AR coating, so that a backlight end and a light emitting end are formed.
As shown in fig. 1 to 3, an active region 13 and a passive region 16 are disposed in the laser body 1 of the present embodiment, an annular pillar 21 extends vertically from the top of the laser body 1 into the passive region 16, and the annular pillar 21 and an epitaxial structure 22 of the passive region around the annular pillar together form a multi-order grating 2 embedded in the passive region 16 in the laser body 1.
As shown in fig. 1 to 3, the laser body 1 is provided with a relief step 17 on the surface of the inactive region 16, and the annular pillar 21 extends vertically from the relief step 17 to the inside of the laser body 1. The setting of step 17 of stepping down can effectively reduce the height of annular post 21 to reduce grating etching depth, reduce the grating preparation degree of difficulty, and because the up end of annular post 21 does not have the electric current injection, the reliability of device also can be higher.
As shown in fig. 1-3, the length L of the inactive region 16 in the x-direction 1 At a distance L of 30-50 μm between the inner edge of the annular pillar 21 and the inner edge of the inactive region 16 2 0-30 μm. Therefore, the reasonable and reliable structure of the edge-emitting laser can be ensured, and the multi-order grating 2 can stably play the role of stabilizing wavelength.
As shown in fig. 1 to 3, the calculation formula of the period length Λ of the multi-order grating 2 is:
wherein: n represents the grating order, λ represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
From the above calculation formula, the period length Λ of the multi-order grating 2 is determined by the grating order n and the effective refractive index n of the grating eff And (5) jointly determining.
Then, the design of the grating order n depends on: since the annular pillars 21 extend from the cap layer 14 to below the active region 13, the height is very high, and in order to ensure a small aspect ratio and also to reduce the difficulty of grating fabrication, the period length Λ of the multi-step grating 2 should be kept relatively wide. Based on this, the range of values of the grating order n is set as: n is more than 1 and less than 100.
Effective refractive index n of grating eff According to the design basis of: effective refractive index n of grating eff Adjustment is made by adjusting the material of the ring-shaped pillars 21 and the epitaxial structure 22 of the inactive region of the periphery thereof. To reduce design difficulties, the material of the annular post 21 (i.e., the second grating material) may be selected based onThe material of the epitaxial structure 22 (i.e., the first grating material) of the peripheral inactive region is specifically determined. For the epitaxial structure material of the side-emitting laser, the material of the annular column 21 can be air or SiO 2 SiNx, gaAs, inGaAsP or InP.
As shown in fig. 2, it has been found that, when the embedded multi-order grating structure of the annular post 21 is adopted, the light exit angle α (the angle between the light exit direction and the x direction) of the laser body 1 has a direct relationship with the grating order n of the multi-order grating 2.
For example: when the grating order is n=2, the light emergent angle alpha=90°, so that light is emergent along the positive direction or the negative direction of z, namely the laser body can realize surface emission; when the grating order is n=3, the light emergent angle is α=arcos±1/3, so that the light can emerge along the direction 72.5 DEG or-72.5 DEG or 162.5 DEG or-162.5 DEG or the z direction; when the grating order n=1, the light emergent angle α=0°, so that light can still emerge along the positive direction of x, i.e. the laser body can realize edge emission.
Therefore, the light emitting direction can be flexibly adjusted by adjusting the grating order n. Based on the design concept of adjusting the light emitting angle α by adjusting the grating order n of the multi-order grating 2, the multi-order grating embedded with the annular column 21 can only be disposed at the light emitting end, but not at the backlight end.
The light emitting direction of the existing edge-emitting laser cannot be adjusted, and for some special application occasions, if the light emitting direction needs to be changed, the placement angle of the laser needs to be adjusted, so that the operation is troublesome. The embedded multi-order grating using the annular column 21 can flexibly adjust the light emitting angle of the laser only by adjusting the grating order n, so that the embedded multi-order grating can be suitable for the use requirements of some special scenes.
As shown in fig. 1 to 3, as a preferable scheme: the annular column 21 may be designed as an annular elliptic column or an annular cylinder, and it is only necessary to ensure that the annular column 21 has a symmetrical structure along the x-direction.
Embodiment two:
as shown in fig. 5 and 6, unlike the first embodiment, the present embodiment does not provide a step-down in the inactive region 16, and the upper end face of the multi-step grating 2 and the upper end face of the cap layer 14 are flush with each other. Specifically, the preparation method of the embodiment includes the following steps:
(1) An epitaxial structure is grown over the substrate 11, thereby forming a laser body 1, and both ends of the laser body 1 in the x-direction are a light-emitting end and a backlight end, respectively. Specifically, the epitaxial structure includes a buffer layer 12, an active region 13, and a cap layer 14 stacked from bottom to top.
(2) A landing 15 is etched into the light exit end of the laser body 1, the landing 15 extending from the surface of the laser body 1 to a depth above the substrate 11.
(3) The first grating material is grown butt-jointed at the landing 15 by means of a second epitaxy, so that a passive region 16 is formed, in this embodiment the surface of the passive region 16 and the surface of the cap layer 14 are flush with each other.
(4) A plurality of annular grooves are etched in the passive region 16 at intervals along the x direction, and the annular grooves are filled with a second grating material, so that annular columns 21 are formed.
(5) The annular column 21 and the epitaxial structure 22 of the passive region at the periphery thereof together form a multi-order grating embedded in the laser body 1.
Compared with the first embodiment, the method has the advantages that the step of etching the step of giving way is omitted, and the flow is simpler. However, it was found by experimentation that the solution of the first embodiment is effective in reducing the height of the annular post 21 and thus easier to manufacture. In addition, the provision of the relief step 17 in the first embodiment can make the upper end face of the annular pillar 21 free from current injection, so that the reliability of the device is higher. Therefore, the first embodiment and the second embodiment have certain advantages, and can realize the manufacture of the edge-emitting laser based on the passive region multi-order grating, so that the first embodiment and the second embodiment have positive guiding significance for the practical application of the edge-emitting laser.
Embodiment III:
as shown in fig. 7 to 9, unlike the first embodiment, the grating grooves in this embodiment are preferably columnar grooves arranged at intervals along the y-direction, and the columnar grooves are filled with the second grating material to form geometric columns 23. The preparation method of this embodiment is substantially the same as that of embodiment one, and thus a description thereof will not be repeated. In addition, the related parameters of the multi-order grating in the present embodiment can also refer to the specific design of the first embodiment, and will not be described herein.
As shown in fig. 7 to 9, the structure of the geometric pillar 23 may be designed as a cylinder or a prism according to specific requirements, and the present embodiment is preferably a prism, more precisely a quadrangular prism.
Embodiment four:
as shown in fig. 10, unlike the second embodiment, the grating grooves in this embodiment are preferably columnar grooves arranged at intervals along the y direction, and the columnar grooves are filled with the second grating material to form geometric columns 23. The structure of the geometric pillar 23 can be designed specifically with reference to the third embodiment, and will not be described in detail herein.
In the third embodiment and the fourth embodiment, the multi-order grating is located at the light emitting end of the laser body, but in practical application, the multi-order grating structure of the embedded geometric column is not limited to the light emitting end, and the multi-order grating can be also arranged at the backlight end of the laser body, or both the light emitting end and the backlight end are provided with the multi-order grating.
The foregoing is merely a specific embodiment of the present invention, but the design concept of the present invention is not limited thereto. The design concept of the invention is utilized to make insubstantial changes on the invention, which belongs to the behavior of infringement of the protection scope of the invention.
Claims (8)
1. A preparation method of an edge-emitting laser based on a butt-joint growth process is characterized by comprising the following steps: the method comprises the following steps:
(1) Growing an epitaxial structure above a substrate to form a laser body, wherein two ends of the laser body along the x direction are respectively a light emitting end and a backlight end; the epitaxial structure comprises a buffer layer, an active region and a cap layer which are stacked from bottom to top;
(2) Etching a step at the light emitting end and/or the backlight end of the laser body, wherein the depth of the step is etched from the surface of the laser body to the upper part of the substrate;
(3) The second epitaxy is adopted to butt-joint and grow a first grating material at the step, so that a passive area is formed;
(4) Etching a plurality of grating grooves which are arranged at intervals in the passive region, wherein each grating groove extends from the cap layer to below the active region, and filling second grating materials in the grating groove according to the requirement; the grating grooves are cylindrical grooves which are arranged at intervals along the y direction, or the grating grooves are annular grooves which are arranged at intervals along the x direction, and the radius of a plurality of annular grooves which are sequentially arranged from inside to outside is gradually increased;
(5) The second grating material and the first grating material around the second grating material form a multi-order grating embedded in the laser body.
2. The method for manufacturing the edge-emitting laser based on the butt-joint growth process as claimed in claim 1, wherein: in step (3), the height of the inactive region is between the cap layer and the active region, so that the surface of the inactive region and the surface of the cap layer form a step-down.
3. The method for manufacturing the edge-emitting laser based on the butt-joint growth process as claimed in claim 2, wherein: before etching the terrace, first depositing a first etching mask in a non-etching area of the surface of the laser body; before etching the grating groove, a second etching mask is deposited on the surface of the passive area; and removing the first etching mask and the second etching mask after the grating groove is etched.
4. The method for manufacturing the edge-emitting laser based on the butt-joint growth process as claimed in claim 1, wherein: length L of the inactive region in the x-direction 1 At a spacing L of 30-50 μm between the inner edge of the first grating material and the inner edge of the inactive region 2 0-30 μm.
5. The method for manufacturing the edge-emitting laser based on the butt-joint growth process as claimed in claim 1, wherein: the calculation formula of the period length lambda of the multi-order grating is as follows:wherein: n represents the grating order, λ represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
6. The method for preparing the edge-emitting laser based on the butt-joint growth process as claimed in claim 5, wherein the method comprises the following steps: the grating grooves are annular grooves which are arranged at intervals along the x direction, and the light emitting angle alpha of the laser body is adjusted by adjusting the grating order n of the multi-order grating.
7. The method for preparing the edge-emitting laser based on the butt-joint growth process as claimed in claim 5, wherein the method comprises the following steps: the value range of the grating order n is as follows: n is more than 1 and less than 100.
8. The method for manufacturing the edge-emitting laser based on the butt-joint growth process as claimed in claim 1, wherein: the second grating material is air or SiO 2 SiNx, gaAs, inGaAsP or InP.
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| US5164956A (en) * | 1991-10-21 | 1992-11-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multiperiod-grating surface-emitting lasers |
| WO2005124951A1 (en) * | 2004-06-18 | 2005-12-29 | The University Of Sheffield | Dfb laser with lateral bragg gratings and facet bragg reflectors etches in one step |
| CN102496851A (en) * | 2011-11-24 | 2012-06-13 | 上海宏力半导体制造有限公司 | Laser and manufacturing method thereof, resonance cavity and manufacturing method thereof |
| CN106785904A (en) * | 2017-01-17 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of DFB semiconductor laser preparation method and laser |
| CN115986567A (en) * | 2021-10-15 | 2023-04-18 | 中国科学院半导体研究所 | Double-end-face light-emitting laser and preparation method thereof |
| CN115832868A (en) * | 2022-12-30 | 2023-03-21 | 中国科学院半导体研究所 | Method for manufacturing double-grating semiconductor laser |
| CN115986559A (en) * | 2023-01-18 | 2023-04-18 | 中国科学院半导体研究所 | Echo wall-FP-side grating coupling cavity semiconductor laser |
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