CN116387975B - Stable wavelength edge-emitting laser with adjustable lasing direction - Google Patents
Stable wavelength edge-emitting laser with adjustable lasing direction Download PDFInfo
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- 238000005086 pumping Methods 0.000 claims description 29
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241001061225 Arcos Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a laser direction adjustable stable wavelength side-emitting laser, which relates to the technical field of side-emitting lasers and comprises a laser body and a multi-order grating; the two ends of the laser body along the x direction are respectively a light emitting end and a backlight end, a plurality of annular columns which are arranged at intervals along the x direction are arranged on the inner side of the light emitting end, each annular column extends from the top of the laser body vertically to the inside of the laser body, and the radius of the plurality of annular columns which are sequentially arranged from inside to outside is gradually increased; and the annular columns and the epitaxial structures at the periphery of the annular columns form the multi-order grating together. The invention adopts the structural design of the annular column, and integrates the multi-order grating into the side-emitting laser, thereby realizing wavelength selection, leading the wavelength of the side-emitting laser to be extremely stable, reducing the wavelength drift range of the side-emitting laser, leading the adaptable working condition range to be wider, and simultaneously realizing the adjustment of the laser irradiation direction by changing the grating order.
Description
Technical Field
The invention relates to the technical field of edge-emitting lasers, in particular to a stable-wavelength edge-emitting laser with an adjustable lasing direction.
Background
Although the conventional edge-emitting laser has incomparable advantages in key parameters such as power density, the bottleneck problem of poor wavelength stability exists, because the wavelength of the edge-emitting laser can be changed along with the change of working current and temperature, and experiments prove that the wavelength of the edge-emitting laser can reach more than 0.28nm/K along with the temperature drift coefficient, so that the edge-emitting laser is limited in some application. In general, wavelength stabilization of an edge-emitting laser can achieve a certain degree of stabilization by controlling the temperature and the stability of the injection current, but wavelength locking is required to obtain higher stability. At present, the method for improving the wavelength stability of the edge-emitting laser mainly comprises the following two steps:
first, the external cavity feedback stabilizes the wavelength method. In the method, optical feedback such as gratings is utilized to control the frequency characteristic of a semiconductor, and most of the prior art realizes wavelength stability through a Volume Holographic Grating (VHG), a Volume Bragg Grating (VBG) or a Fiber Bragg Grating (FBG), but the requirements on the manufacturing process are strict, and the cost is high.
And secondly, stabilizing the wavelength in the inner cavity. The method integrates a wavelength stabilizing structure into the semiconductor laser, and realizes wavelength stabilization through the internal structure. There are commonly known distributed feedback lasers (DFB) and distributed bragg reflector lasers (DBR) methods. Both DBR and DFB lasers have relatively low output power, require complex secondary epitaxy techniques and complex grating fabrication techniques, and are costly to fabricate. However, the edge-emitting laser employing the internal wavelength stabilization method has better system compatibility and lower assembly cost than the edge-emitting laser employing the external wavelength stabilization method.
In addition, the light emitting direction of the existing edge emitting laser cannot be adjusted, and for some special application occasions, if the light emitting direction needs to be changed, the placement angle of the laser needs to be adjusted, so that the operation is troublesome.
Disclosure of Invention
The invention provides a laser direction adjustable stable wavelength side-emitting laser, which mainly aims to solve the problems of unstable wavelength and unadjustable light emitting direction of the existing side-emitting laser.
The invention adopts the following technical scheme:
a laser direction adjustable stable wavelength side-emitting laser comprises a laser body and a multi-order grating embedded in the laser body; the two ends of the laser body along the x direction are respectively a light emitting end and a backlight end, a plurality of annular columns which are arranged at intervals along the x direction are arranged on the inner side of the light emitting end, each annular column extends from the top of the laser body vertically to the inside of the laser body, and the radius of the plurality of annular columns which are sequentially arranged from inside to outside is gradually increased; and the annular columns and the epitaxial structures at the periphery of the annular columns form the multi-order grating together.
Further, the light emitting angle alpha of the laser body is adjusted by adjusting the grating order n of the multi-order grating.
Further, the calculation formula of the period length Λ of the multi-order grating is as follows:
wherein: lambda represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
Further, the range of the grating order n is as follows: n is more than 1 and less than 100.
Further, the annular column is made of air and SiO 2 SiNx, gaAs, inGaAsP or InP.
Further, the light emitting end of the laser body is provided with a yielding step, and the annular column extends from the yielding step to the inside of the laser body vertically.
As a specific embodiment: an active region is arranged in the laser body; each annular column vertically penetrates through the top of the laser body to the bottom of the active region and is positioned in a non-pumping region of the active region; and the annular columns and the epitaxial structures of the non-pumping areas around the annular columns form the multi-order grating together. The length of the laser body along the x direction is L, and the length of the non-pumping area along the x direction is L 1 At a distance L of 0.05L from the outer edge of the annular column to the outer edge of the non-pumping region 2 0-30 μm.
As another specific embodiment: an active region and a passive region are arranged in the laser body, and each annular column vertically extends into the passive region from the top of the laser body; a plurality of annular columns and the epitaxial structure of the peripheral passive area thereof are commonThe multi-order grating is constructed. Length L of the inactive region in the x-direction 3 At a distance L of 30-50 μm between the inner edge of the annular column and the inner edge of the inactive region 4 0-30 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention adopts the structural design of the annular column, and integrates the multi-order grating into the side-emitting laser, thereby realizing wavelength selection, leading the wavelength of the side-emitting laser to be extremely stable, reducing the wavelength drift range of the side-emitting laser, leading the adaptable working condition range to be wider, and having the advantages of stable emergent wavelength, small temperature drift and high peak power.
2. The invention adopts an embedded multi-order grating structure of the annular column, and when the light emitting angle alpha of the laser body needs to be adjusted, the invention can be realized only by adjusting the grating order number n of the multi-order grating.
Drawings
Fig. 1 is a perspective view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 2 is a cross-sectional view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 3 is a top view of an edge-emitting laser according to a first embodiment of the present invention.
Fig. 4 is a flowchart of a preparation of an edge-emitting laser according to an embodiment of the present invention.
Fig. 5 is a perspective view of an edge-emitting laser according to a second embodiment of the present invention.
Fig. 6 is a perspective view of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 7 is a top view of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 8 is a flowchart of a preparation of an edge-emitting laser according to a third embodiment of the present invention.
Fig. 9 is a perspective view of an edge-emitting laser according to a fourth embodiment of the present invention.
In the figure: 1-a laser body; 11-substrate, 12-buffer layer; 13-an active region; 14-cap layer; 15-a non-pumping region; 16-step-down; 17-inactive region; 18-landing; 110. a first etching mask; 111-a second etching mask; 2-multi-order grating; 21-an annular column; epitaxial structure of 22-non-pumping region; epitaxial structure of the 23-passive region.
Detailed Description
Specific embodiments of the present invention will be described below with reference to the accompanying drawings. Numerous details are set forth in the following description in order to provide a thorough understanding of the present invention, but it will be apparent to one skilled in the art that the present invention may be practiced without these details.
Embodiment one:
as shown in fig. 1 and 2, the present embodiment provides a lasing direction adjustable stable wavelength edge emitting laser, which includes a laser body 1 and a multi-order grating 2 embedded in the laser body 1. Specifically, the two ends of the laser body 1 along the x direction are respectively a backlight end and a light emitting end, the inner side of the light emitting end is provided with a plurality of annular columns 21 which are arranged at intervals along the x direction, the annular columns 21 extend from the surface of the laser body 1 to the inside of the laser body 1 vertically, and the radius of the annular columns 21 which are arranged from inside to outside gradually increases. The annular columns 21 and the epitaxial structure at the periphery thereof together form the multi-order grating 2. The multi-order grating 2 is integrally arranged in the edge-emitting laser, so that wavelength selection is realized, and the wavelength of the edge-emitting laser is extremely stable.
As shown in fig. 1 and 2, the laser body 1 in this embodiment includes a substrate 11 and an epitaxial structure disposed over the substrate 11. The epitaxial structure includes a buffer layer 12, an active region 13 and a cap layer 14 stacked from bottom to top. And the two end surfaces of the epitaxial structure along the x direction are respectively provided with an HR coating and an AR coating, so that a backlight end and a light emitting end are formed.
As shown in fig. 1 and 2, the middle part of the active region 13 is a pumping region, one side close to the light emitting end is a non-pumping region 15, the annular column 21 extends from the top of the laser body 1 vertically to the inside of the laser body 1 and extends at least to the bottom of the active region 13, and the annular column 21 is located in the non-pumping region 15 of the active region 13. The annular column 21 and the epitaxial structure 22 of the non-pumping area at the periphery thereof together form the multi-order grating 2. If the annular column 21 is disposed in the pumping region of the active region 13, the crystal quality is damaged, the pollution is serious, and the optical gain is small, so that the multi-order grating region is set as the non-pumping region 15. As shown in fig. 1 and 2, the surface of the non-pumping area 15 of the laser body 1 is provided with a step 16, and the annular column 21 extends vertically from the step 16 to the inside of the laser body 1. The setting of step 16 of stepping down can effectively reduce the height of annular post 21 to reduce grating etching depth, reduce the grating preparation degree of difficulty, and because the up end of annular post 21 does not have the electric current injection, the reliability of device also can be higher.
As shown in fig. 3, the length of the laser body 1 in the x-direction is L, and the length of the non-pumping region 15 in the x-direction is L 1 At a spacing L of 0.05L, the outside edge of the annular column 21 is spaced from the outside edge of the non-pumping region 15 2 The wavelength is 0-30 mu m, so that the reasonable and reliable structure of the edge-emitting laser is ensured, and the multi-order grating 2 can stably play the role of stabilizing the wavelength.
As shown in fig. 2 and 3, the calculation formula of the period length Λ of the multi-order grating 2 is:
wherein: n represents the grating order, λ represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
From the above calculation formula, the period length Λ of the multi-order grating 2 is determined by the grating order n and the effective refractive index n of the grating eff And (5) jointly determining.
Then, the design of the grating order n depends on: since the annular pillars 21 extend from the cap layer 14 to below the active region 13, the height is very high, and in order to ensure a small aspect ratio and also to reduce the difficulty of grating fabrication, the period length Λ of the multi-step grating 2 should be kept relatively wide. Based on this, the range of values of the grating order n is set as: n is more than 1 and less than 100.
Effective refractive index n of grating eff According to the design basis of: effective refractive index n of grating eff Adjustment is made by adjusting the material of the epitaxial structure 22 of the annular pillar 21 and the non-pumping region of its periphery. To reduce design difficulties, the material of the annular post 21 may be selected based on its perimeterThe material of the epitaxial structure 22 of the non-pumping region of (c) is specifically determined. For the epitaxial structure material of the side-emitting laser, the material of the annular column 21 can be air or SiO 2 SiNx, gaAs, inGaAsP or InP.
As shown in fig. 2, it has been found that, when the embedded multi-order grating structure of the annular post 21 is adopted, the light exit angle α (the angle between the light exit direction and the x direction) of the laser body 1 has a direct relationship with the grating order n of the multi-order grating 2.
For example: when the grating order is n=2, the light emergent angle alpha=90°, so that light is emergent along the positive direction or the negative direction of z, namely the laser body can realize surface emission; when the grating order is n=3, the light emergent angle is α=arcos±1/3, so that the light can emerge along the direction of 72.5 degrees or 162.5 degrees with the z direction; when the grating order n=1, the light emergent angle α=0°, so that light can still emerge along the positive direction of x, i.e. the laser body can realize edge emission.
Therefore, the light emitting direction can be flexibly adjusted by adjusting the grating order n. Based on the design concept of adjusting the light emitting angle α by adjusting the grating order n of the multi-order grating 2, the multi-order grating embedded with the annular column 21 can only be disposed at the light emitting end, but not at the backlight end.
The light emitting direction of the existing edge-emitting laser cannot be adjusted, and for some special application occasions, if the light emitting direction needs to be changed, the placement angle of the laser needs to be adjusted, so that the operation is troublesome. The embedded multi-order grating using the annular column 21 can flexibly adjust the light emitting angle of the laser only by adjusting the grating order n, so that the embedded multi-order grating can be suitable for the use requirements of some special scenes.
As shown in fig. 1 to 3, as a preferable scheme: the annular column 21 may be designed as an annular elliptic column or an annular cylinder, and it is only necessary to ensure that the annular column 21 has a symmetrical structure along the x-direction.
As shown in fig. 1 to 4, the method for manufacturing the edge-emitting laser according to the present embodiment includes the following steps:
(1) An epitaxial structure is grown above the substrate 11, so that a laser body 1 is formed, and two end faces of the laser body 1 along the x direction are respectively a backlight end and a light emitting end. Specifically, the epitaxial structure includes a buffer layer 12, an active region 13 and a cap layer 14 stacked from bottom to top, the middle of the active region 13 is a pumping region, and the side close to the light emitting end is a non-pumping region 15.
(2) A plurality of annular grooves which are arranged at intervals are etched in the non-pumping area 15 of the laser body 1, and first grating materials are filled in the annular grooves, so that annular columns 21 are formed. The method comprises the following substeps:
(2.1) etching a step-down 16 in the non-pumping region 15 of the laser body 1 by photolithographic exposure. Specifically, first, a first etching mask 110 is deposited on a non-etched region of the surface of the laser body 1 by an enhanced plasma chemical vapor deposition (PECVD), photolithography and Reactive Ion Etching (RIE) process, and the first etching mask 110 is preferably SiNx/SiO 2 Etching a mask or photoresist; the step-down 16 is then formed by an Inductively Coupled Plasma (ICP) etch and wet etch process. It should be noted that the height of the step 16 in the z direction is smaller than the height H of the cap layer 14, and the length of the step 16 in the x direction is smaller than the length L of the non-pumping region 15 1 。
(2.2) etching a plurality of annular grooves which are arranged at intervals at the position of the step-down 16 through photoetching exposure. Specifically, first, a second etching mask 111 with a periodic arrangement of annular pillar patterns is formed in the non-pumping region 15 by enhanced plasma chemical vapor deposition (PECVD), photolithography and Reactive Ion Etching (RIE), and the second etching mask 111 is also preferably SiNx/SiO 2 Etching a mask or photoresist; then forming a plurality of annular grooves through dry etching and wet etching processes; finally, the first etching mask 110 and the second etching mask 111 are removed by BOE.
(2.3) filling the annular groove with the first grating material as needed, thereby forming the annular column 21. When air is selected as the first grating material, no filling process is required. When other materials are selected, deposition may be performed by enhanced plasma chemical vapor deposition (PECVD) or MOCVD.
(3) The annular column 21 and the epitaxial structure around the annular column form a multi-order grating 2 embedded in the laser body 1.
Embodiment two:
as shown in fig. 5, unlike the first embodiment, the present embodiment does not provide a step-down in the non-pumping region 15, and the upper end surface of the multi-order grating 2 and the upper end surface of the cap layer 14 are flush with each other. Compared with the first embodiment, the preparation method of the present embodiment has less steps of etching the step (i.e., step (2.1)) and is simpler in flow. However, it was found by experimentation that the solution of the first embodiment is effective in reducing the height of the annular post 21 and thus easier to manufacture. In addition, the provision of the step-down 16 in the first embodiment can make the upper end face of the annular pillar 21 free from current injection, so that the reliability of the device is higher. Therefore, the first embodiment and the second embodiment have certain advantages, and can realize the manufacture of the edge-emitting laser based on the non-pumping area multi-order grating, so that the first embodiment and the second embodiment have positive guiding significance for the practical application of the edge-emitting laser.
Embodiment III:
as shown in fig. 6 and 7, unlike the first embodiment, the laser body 1 of the present embodiment is provided with an active region 13 and a passive region 17, the annular pillar 21 extends vertically from the top of the laser body 1 into the passive region 17, and the annular pillar 21 and the epitaxial structure 23 of the passive region around the annular pillar together form the multi-order grating 2 embedded in the passive region 17 in the laser body 1.
As shown in fig. 6 and 7, the length L of the inactive region 17 in the x-direction 3 At a distance L of 30-50 μm between the inner edge of the annular pillar 21 and the inner edge of the inactive region 17 4 0-30 μm.
As shown in fig. 6 to 8, the method for manufacturing the edge-emitting laser according to the present embodiment includes the following steps:
(1) An epitaxial structure is grown over the substrate 11, thereby forming a laser body 1, and both ends of the laser body 1 in the x-direction are a light-emitting end and a backlight end, respectively. Specifically, the epitaxial structure includes a buffer layer 12, an active region 13, and a cap layer 14 stacked from bottom to top.
(2) At the light-emitting end of the laser body 1A mesa 18 is etched away, the depth of the mesa 18 extending from the surface of the laser body 1 to above the substrate 11. Specifically, the first etching mask 110 is first deposited in a non-etched region of the surface of the laser body 1 by an enhanced plasma chemical vapor deposition (PECVD), photolithography, and Reactive Ion Etching (RIE) process, and then the landing 18 is formed by an Inductively Coupled Plasma (ICP) etching and wet etching process. Preferably, the first etching mask 110 is SiNx/SiO 2 Etching masks or photoresists.
(3) A second grating material is grown butt-jointed at the mesa 18 using a second epitaxy to form the inactive region 17. Specifically, the second grating material is a lattice matched semiconductor material, and the butt-joint growth is carried out by MOCVD secondary epitaxy. The height of the inactive region 17 is between the cap layer 14 and the active region 13 of the epitaxial structure, so that an abdication step is formed between the surface of the inactive region 17 and the surface of the cap layer 14, so that the annular groove is etched in the inactive region 17 later.
(4) A plurality of annular grooves are etched in the passive region 17 at intervals, and the annular grooves are filled with first grating material, so that annular columns 21 are formed. Specifically, first, a second etching mask 111 with periodically arranged annular columns is formed on the surface of the passive region 17 through an enhanced plasma chemical vapor deposition (PECVD), photolithography and Reactive Ion Etching (RIE) process; then forming a plurality of annular grooves through dry etching and wet etching processes; finally, the first etching mask 110 and the second etching mask 111 are removed. The second etching mask 111 is also preferably SiNx/SiO 2 The etching mask or photoresist, and thus the first etching mask 110 and the second etching mask 111 may be removed simultaneously using BOE. And after the annular groove is etched, filling a first grating material into the annular groove according to the requirement. When air is selected as the first grating material, no filling process is required. When other materials are selected, deposition may be performed by enhanced plasma chemical vapor deposition (PECVD) or MOCVD.
(5) The annular column 21 and the epitaxial structure 23 of the passive region at the periphery thereof together form a multi-order grating embedded inside the laser body 1.
Embodiment four:
as shown in fig. 9, unlike the third embodiment, the present embodiment does not provide a step-down step on the surface of the passive region 17, and the upper end face of the multi-order grating 2 and the upper end face of the cap layer 14 are flush with each other. Compared with the third embodiment, the manufacturing method of the present embodiment is different in that only the height of the second grating material needs to be controlled to be level with the cap layer 14 when the second grating material is grown in a butt joint manner, so that the flow is simpler. However, it was found by experimentation that the solution of the third embodiment is effective in reducing the height of the annular post 21 and thus easier to manufacture. Therefore, the third embodiment and the fourth embodiment have certain advantages, and can realize the manufacture of the edge-emitting laser based on the passive region multi-order grating, so that the third embodiment and the fourth embodiment have positive guiding significance for the practical application of the edge-emitting laser.
The foregoing is merely a specific embodiment of the present invention, but the design concept of the present invention is not limited thereto. The design concept of the invention is utilized to make insubstantial changes on the invention, which belongs to the behavior of infringement of the protection scope of the invention.
Claims (8)
1. A laser direction adjustable stable wavelength edge emitting laser is characterized in that: the multi-order grating comprises a laser body and a multi-order grating embedded in the laser body; the two ends of the laser body along the x direction are respectively a light emitting end and a backlight end, a plurality of annular columns which are arranged at intervals along the x direction are arranged on the inner side of the light emitting end, each annular column extends from the top of the laser body vertically to the inside of the laser body, and the radius of the plurality of annular columns which are sequentially arranged from inside to outside is gradually increased; the annular columns and the epitaxial structures at the periphery of the annular columns form the multi-order grating together;
an active region is arranged in the laser body; each annular column vertically penetrates through the top of the laser body to the bottom of the active region and is positioned in a non-pumping region of the active region; the annular columns and the epitaxial structures of the non-pumping areas around the annular columns form the multi-order grating together;
or an active region and a passive region are arranged in the laser body, and each annular column vertically extends from the top of the laser body to the passive region; and the annular columns and the epitaxial structures of the passive areas at the periphery of the annular columns form the multi-order grating together.
2. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 1, wherein: and adjusting the light emergent angle alpha of the laser body by adjusting the grating order n of the multi-order grating.
3. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 2, wherein: the calculation formula of the period length lambda of the multi-order grating is as follows:
，
wherein: lambda represents the lasing wavelength of the edge-emitting laser, n eff Indicating the effective refractive index of the grating.
4. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 2 or 3, wherein: the value range of the grating order n is as follows: n is more than 1 and less than 100.
5. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 1, wherein: the annular column is made of air and SiO 2 SiNx, gaAs, inGaAsP or InP.
6. A stable wavelength edge emitting laser as defined in claim 1 wherein: the light emitting end of the laser body is provided with a step of stepping down, and the annular column extends from the step of stepping down to the inside of the laser body vertically.
7. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 1, wherein: the length of the laser body along the x direction is L, theLength L of non-pumping region along x-direction 1 At a distance L of 0.05L from the outer edge of the annular column to the outer edge of the non-pumping region 2 0-30 μm.
8. A lasing-direction-tunable stable wavelength side-emitting laser as claimed in claim 1, wherein: length L of the inactive region in the x-direction 3 At a distance L of 30-50 μm between the inner edge of the annular column and the inner edge of the inactive region 4 0-30 μm.
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| US5164956A (en) * | 1991-10-21 | 1992-11-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Multiperiod-grating surface-emitting lasers |
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| CN109565151A (en) * | 2016-10-12 | 2019-04-02 | 古河电气工业株式会社 | Semiconductor Laser device |
| CN215896966U (en) * | 2021-09-30 | 2022-02-22 | 青岛翼晨镭硕科技有限公司 | High-order grating single longitudinal mode groove laser |
| CN217740981U (en) * | 2022-08-22 | 2022-11-04 | 福建慧芯激光科技有限公司 | Human eye safe long wavelength VCSEL array chip for laser radar |
| CN115832868A (en) * | 2022-12-30 | 2023-03-21 | 中国科学院半导体研究所 | Method for manufacturing double-grating semiconductor laser |
| CN115986567A (en) * | 2021-10-15 | 2023-04-18 | 中国科学院半导体研究所 | Double-end-face light-emitting laser and preparation method thereof |
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| US20040114642A1 (en) * | 2002-03-22 | 2004-06-17 | Bullington Jeff A. | Laser diode with output fiber feedback |
| JP5242975B2 (en) * | 2007-09-03 | 2013-07-24 | 独立行政法人科学技術振興機構 | Diffraction grating type light emitting diode |
| US20220224081A1 (en) * | 2021-01-12 | 2022-07-14 | Phosertek Corporation | Surface-emitting laser |
| CN114188426B (en) * | 2022-02-17 | 2022-06-14 | 福建慧芯激光科技有限公司 | Photoelectric detector with high bandwidth and high responsivity |
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| CN103050591A (en) * | 2011-10-14 | 2013-04-17 | 中国科学院物理研究所 | Surface plasmon electro excitation source and manufacturing method thereof |
| CN109565151A (en) * | 2016-10-12 | 2019-04-02 | 古河电气工业株式会社 | Semiconductor Laser device |
| CN215896966U (en) * | 2021-09-30 | 2022-02-22 | 青岛翼晨镭硕科技有限公司 | High-order grating single longitudinal mode groove laser |
| CN115986567A (en) * | 2021-10-15 | 2023-04-18 | 中国科学院半导体研究所 | Double-end-face light-emitting laser and preparation method thereof |
| CN217740981U (en) * | 2022-08-22 | 2022-11-04 | 福建慧芯激光科技有限公司 | Human eye safe long wavelength VCSEL array chip for laser radar |
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