CN116826522A - Super-symmetrical semiconductor laser with lateral grating - Google Patents
Super-symmetrical semiconductor laser with lateral grating Download PDFInfo
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- CN116826522A CN116826522A CN202311108520.XA CN202311108520A CN116826522A CN 116826522 A CN116826522 A CN 116826522A CN 202311108520 A CN202311108520 A CN 202311108520A CN 116826522 A CN116826522 A CN 116826522A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005259 measurement Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000001259 photo etching Methods 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application discloses a super-symmetrical semiconductor laser with lateral grating, comprising: an N-face electrode, a substrate, a buffer layer, an N-type waveguide layer, an active layer, a P-type waveguide layer and a super-symmetrical structure which are sequentially stacked from bottom to top along the epitaxial direction; the super-symmetrical structure comprises a P-type cover layer and an upper contact layer, wherein the upper contact layer is stacked on the P-type cover layer, the middle part of the super-symmetrical structure is a main waveguide, and sub-waveguides are arranged on two sides of the main waveguide; a lateral grating is longitudinally arranged between the sub-waveguide and the main waveguide and is used for realizing the selection of a longitudinal mode; and a P-surface electrode is arranged on the main waveguide. Has the following advantages: by adopting the super-symmetrical structure, under the condition that the middle main waveguide is not lost in the base side mode, high-power base side mode output is realized, the manufacture of standard photoetching is realized by designing the duty ratio of the lateral grating, the lateral grating structure is used, and the grating structure is obtained by etching at two sides of the ridge waveguide, so that secondary epitaxial growth is avoided.
Description
Technical Field
The application relates to the technical field of semiconductor lasers, in particular to a super-symmetrical semiconductor laser with a lateral grating.
Background
The semiconductor laser has the advantages of low cost, small device size, high power conversion efficiency, high reliability and the like, and is widely applied to the fields of industrial processing, communication networks, laser sensing, aviation national defense, safety protection and the like. The high-power narrow-linewidth laser has extremely high spectral purity, extremely high peak spectral density, extremely long coherence length and extremely low phase noise, so that the high-power narrow-linewidth laser has important application in the fields of atomic magnetometers, atomic cooling, atomic clocks, quantum gyroscopes and the like as a core light source, and therefore, the design and manufacture of the high-power narrow-linewidth semiconductor laser which is simple, can be produced in batches becomes a research hot spot.
In the lateral direction, the common ridge waveguide semiconductor laser needs to control the ridge width below 2um, the small ridge width is used for limiting the appearance of a high-order side mode, but the small ridge width has smaller electric injection area, so that the output power of the semiconductor laser is lower, the large ridge width semiconductor laser has larger electric injection area and higher output power, but a high-order mode can appear in the lateral direction, or the etching depth can sometimes exceed an active area layer by deeply etching two isolation grooves on two sides of the ridge waveguide, so that a larger refractive index difference is provided for the laser in an external structure, and electrons and photons can be better limited in a light emitting area; in addition, the ridge waveguide edge is subjected to sawtooth treatment to realize loss cutting of the high-order side mode, but the two treatment modes have the defect that certain loss is caused to the base side mode.
In the longitudinal direction, the traditional distributed feedback semiconductor laser needs to etch a grating structure on a P-type waveguide layer, so as to select a desired longitudinal mode, then perform secondary epitaxial growth, continue to grow epitaxial materials on the grating, and have higher manufacturing cost and complex procedures due to the need of the secondary epitaxial growth, which is unfavorable for mass production.
Disclosure of Invention
Aiming at the defects, the application provides the super-symmetrical semiconductor laser with the lateral grating, which adopts a super-symmetrical structure, realizes high-power base side mode output under the condition that a base side mode of a middle main waveguide is not lost, realizes standard photoetching manufacture by designing the duty ratio of the lateral grating, obtains the grating structure by etching at two sides of a ridge waveguide by using the lateral grating structure, avoids secondary epitaxial growth, is beneficial to reducing the manufacturing cost and simplifies the manufacturing process.
In order to solve the technical problems, the application adopts the following technical scheme:
a super-symmetric semiconductor laser with lateral gratings, comprising:
an N-face electrode, a substrate, a buffer layer, an N-type waveguide layer, an active layer, a P-type waveguide layer and a super-symmetrical structure which are sequentially stacked from bottom to top along the epitaxial direction;
the super-symmetrical structure comprises a P-type cover layer and an upper contact layer, wherein the upper contact layer is stacked on the P-type cover layer, the middle part of the super-symmetrical structure is a main waveguide, and sub-waveguides are arranged on two sides of the main waveguide;
a lateral grating is longitudinally arranged between the sub-waveguide and the main waveguide and is used for realizing the selection of a longitudinal mode;
the main waveguide is provided with a P-surface electrode;
and the high-order side mode of the main waveguide is coupled with the modes of the two measuring sub-waveguides to form a lossy mode for realizing high-power base side mode output.
Further, the super-symmetric structure is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from visible light to middle and far infrared.
Further, the width of the main waveguide corresponds to a width capable of accommodating a corresponding number of modes in a range from visible light to mid-far infrared.
Further, the width of the sub-waveguide at the left side of the main waveguide corresponds to the width of the visible light to the middle-far infrared band, the number of the corresponding modes can be accommodated, and the distance between the left sub-waveguide and the main waveguide is 1-6 mu m.
Further, the width of the sub-waveguide on the right side of the main waveguide corresponds to the width of the visible light to the middle-far infrared band, the number of the corresponding modes can be accommodated, and the distance between the sub-waveguide on the right side and the main waveguide is 1-6 mu m.
Further, the structure of the lateral grating is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from visible light to middle and far infrared.
Furthermore, the etching depth of the lateral grating is consistent with that of the super-symmetrical structure.
Further, the lateral grating satisfies a grating bragg condition:
where m is the lateral grating order, λ is the wavelength, neff is the effective refractive index, Λ is the lateral grating period.
Further, the spacing between the gratings in the lateral gratings is greater than 1um.
Compared with the prior art, the application has the following technical effects:
1. the super-symmetrical structure of the super-symmetrical semiconductor laser with the lateral grating comprises the middle main waveguide and the two side sub waveguides, the high-order side modes of the middle main waveguide are coupled to the two sides and are lost by the two side sub waveguides, and the electric pumping area is large because the middle main waveguide is wider, so that the middle main waveguide realizes high-power base side mode output under the condition that the base side modes are not lost.
2. The super-symmetrical semiconductor laser with the lateral grating provided by the application is used for narrowing the line width and realizing the selection of the longitudinal mode by designing the period of the lateral grating.
3. The super-symmetrical semiconductor laser with the lateral grating provided by the application realizes standard photoetching manufacture by designing the duty ratio of the lateral grating, obtains the grating structure by etching at two sides of the ridge waveguide by using the lateral grating structure, avoids secondary epitaxial growth, is beneficial to reducing the manufacturing cost, simplifies the manufacturing process and is suitable for mass production.
4. The super-symmetrical semiconductor laser with the lateral grating can realize high-power narrow-linewidth single-side mode output, and has important application prospects in the fields of atomic magnetometers, atomic cooling, atomic clocks, quantum gyroscopes and the like.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a schematic diagram of a three-dimensional structure of a super-symmetric semiconductor laser with a lateral grating according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an xz plane structure of a super-symmetric semiconductor laser with a lateral grating according to an embodiment of the present application;
FIG. 3 is a lateral mode supported by a semiconductor laser of conventional ridge waveguide structure without adding a super-symmetric structure in the prior art;
FIG. 4 is a lateral mode supported by a super-symmetric semiconductor laser with lateral gratings provided in accordance with an embodiment of the present application;
fig. 5 is a reflection spectrum of a super-symmetric semiconductor laser with lateral grating provided according to an embodiment of the present application, with a grating length of 27.5 um.
Detailed Description
An embodiment, as shown in fig. 1 and 2, a super-symmetric semiconductor laser with lateral gratings, comprising:
the N-plane electrode 201, the substrate 202, the buffer layer 203, the N-type waveguide layer 204, the active layer 205, the P-type waveguide layer 206 and the super-symmetrical structure are sequentially stacked from bottom to top along the epitaxial direction, the super-symmetrical structure comprises a P-type cover layer 207 and an upper contact layer 208, the upper contact layer 208 is stacked on the P-type cover layer 207, the main waveguide 212 is arranged in the middle of the super-symmetrical structure, sub-waveguides 211 are arranged on two sides of the main waveguide 212, a lateral grating 210 is longitudinally arranged between the sub-waveguides 211 and the main waveguide 212, and the P-plane electrode 209 is arranged on the main waveguide 212.
The higher order side modes of the main waveguide 212 are coupled with modes of the two-measurement waveguide 211 to form a lossy mode for realizing high-power fundamental side mode output.
The super-symmetrical structure is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from visible light to middle and far infrared.
The width of the main waveguide 212 corresponds to a width in which a corresponding number of modes can be accommodated from the visible light to the mid-far infrared band.
The width of the sub-waveguide 211 positioned on the left side of the main waveguide 212 corresponds to the width in which the corresponding number of modes can be accommodated in the range from visible light to mid-far infrared, and the distance between the left sub-waveguide 211 and the main waveguide 212 should be a suitable coupling strength distance, and the distance should be 1-6 μm.
The width of the sub-waveguide 211 positioned on the right side of the main waveguide 212 corresponds to the width in which the corresponding number of modes can be accommodated in the range from visible light to mid-far infrared, and the distance between the sub-waveguide 211 on the right side and the main waveguide 212 should be a suitable coupling strength distance, and the distance should be 1-6 μm.
The lateral grating 210 is used for realizing the selection of the longitudinal mode, the structure of the lateral grating 210 is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from the visible light to the mid-far infrared band.
The lateral grating 210 has the same etching depth as the super-symmetrical structure, so that the production process is simplified, and the large-scale production and application are facilitated.
The lateral grating 210 satisfies the grating bragg condition:
where m is the lateral grating order, λ is the wavelength, n eff For effective index, Λ is the lateral grating period.
The spacing between the gratings in the lateral gratings 210 is greater than 1um to meet the requirements of standard lithography and dry etching.
In the super-symmetrical semiconductor laser with the lateral grating, in the aspect of limiting the lateral mode, a super-symmetrical structure is used, the super-symmetrical structure comprises a middle main waveguide and two side sub-waveguides, the high-order side mode of the middle main waveguide is coupled to two sides and is lost by the two side sub-waveguides, and the middle main waveguide is wider and has larger electric pumping area, so that the middle main waveguide realizes high-power base side mode output under the condition that the base side mode is not lost; in limiting the longitudinal mode, a lateral grating structure is used, and the grating structure is obtained by etching at two sides of a ridge waveguide, so that the secondary epitaxy is avoided, the etching on the waveguide is avoided, the base side mode is greatly influenced, the mode selection capability is realized, and the grating can be prepared by standard photolithography under the condition of well controlling the grating duty ratio.
In order to describe the application more clearly, one of the situations is simulated by using a finite element method simulation in the embodiment of the application:
comprising the following steps: an N-face electrode, a substrate, a buffer layer, an N-type waveguide layer, an active layer, a P-type waveguide layer and a super-symmetrical-lateral grating structure which are sequentially stacked from bottom to top along the epitaxial direction; the super-symmetrical structure is formed by stacking a P-type cover layer and an upper contact layer; the super-symmetrical structure comprises a middle main waveguide and two side sub-waveguides; the lateral grating is arranged between the main waveguide and the sub-waveguide; the P-face electrode is arranged on the main waveguide, and the laser wavelength of the epitaxial wafer under electric injection is 795nm.
The super-symmetrical structure is an etching structure, and the height from the upper contact layer to the active layer is 1.31um, so that the etching depth h is 1.2um, and the super-symmetrical structure is used for realizing better limitation of an optical field.
The width W_m of the main waveguide is 6um, which is used for realizing larger electric injection area and can accommodate a fundamental mode, a first-order mode and a second-order mode, and the propagation constants of the modes are 26.5056um-1, 26.4953um-1 and 26.4801um-1 by using finite element analysis.
The width w_l of the sub-waveguide 211 at the left side of the main waveguide 212 is 2.3um, which is away from the main waveguide 1um, and can accommodate the existence of a mode of the fundamental mode, and the propagation constant is 26.4951um-1, so as to realize better coupling of the first-order mode in the main waveguide.
The width W_r of the sub-waveguide 211 positioned on the right side of the main waveguide 212 is 3.5um, and is 1.2um away from the middle main waveguide, so that two modes of a fundamental mode and a first-order mode can be accommodated, and propagation constants are 26.501um-1 and 26.4803um-1 respectively, so that better coupling of the first-order mode in the right waveguide to the second-order mode in the main waveguide can be realized.
The lateral grating is of an etching structure, and the etching depth h is 1.2um and is used for improving the coupling strength of the lateral grating.
The period lambda of the lateral grating is 2.75um, and the duty ratio is 0.5, so that the requirements of standard photoetching and dry etching are met.
Fig. 3 shows a lateral mode supported by a semiconductor laser with a common ridge waveguide structure, which is calculated according to the finite element method without adding a super-symmetric structure, and the ridge width is 6um, and at this time, it can be seen from fig. 3 that the structure allows the existence of a fundamental mode, a first order mode and a second order mode.
Fig. 4 shows a lateral mode supported by a super-symmetric semiconductor laser with a lateral grating calculated according to the finite element method, where the main waveguide supports a fundamental mode, a first order mode, and a second order mode, the left waveguide supports only the fundamental mode, and the right waveguide supports the fundamental mode and the first order mode. As can be seen from fig. 4, the first-order mode in the main waveguide is coupled with the fundamental mode in the left waveguide to form a pair of coupling modes; the second order mode in the main waveguide is coupled with the first order mode in the right waveguide to form another pair of coupling modes, and as only the electrode is added on the middle main waveguide for electric pumping, the electrode is not arranged on the left sub waveguide and the right sub waveguide, so that loss waveguides are formed on the two sides, the two pairs of coupling modes and the fundamental mode in the right waveguide are not excited due to insufficient gain, and the fundamental mode in the middle main waveguide is excited, so that the high-power single-mode output of the semiconductor laser is realized.
Fig. 5 is a reflectance spectrum of a super-symmetric semiconductor laser with lateral grating with a grating length of 27.5um and a grating period of 2.75um calculated according to the finite element method. As can be seen from fig. 5, the super-symmetric semiconductor laser with the lateral grating has the function of longitudinal mode selection, based on which we can design the period Λ of the lateral grating to realize the lasing of different wavelength single longitudinal modes.
In summary, in the super-symmetrical semiconductor laser with the lateral grating, the high-order side mode of the middle main waveguide is coupled into the sub-waveguide and is lost by utilizing the super-symmetrical structure in the lateral direction, and the high-power fundamental side mode output is realized due to the large area of the middle main conductive pump; in the longitudinal direction, the selection of the longitudinal mode is achieved with a lateral grating structure. The semiconductor laser has a simple structure, can be manufactured by using standard photoetching and dry etching means, and has important application prospects in the fields of atomic magnetometers, atomic cooling, atomic clocks, quantum gyroscopes and the like.
The description of the present application has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the application in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, and to enable others of ordinary skill in the art to understand the application for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (9)
1. A super-symmetrical semiconductor laser with lateral grating is characterized in that: comprising the following steps:
an N-face electrode (201), a substrate (202), a buffer layer (203), an N-type waveguide layer (204), an active layer (205), a P-type waveguide layer (206) and a super-symmetrical structure which are sequentially stacked from bottom to top along the epitaxial direction;
the super-symmetrical structure comprises a P-type cover layer (207) and an upper contact layer (208), wherein the upper contact layer (208) is stacked on the P-type cover layer (207), the middle part of the super-symmetrical structure is a main waveguide (212), and sub-waveguides (211) are arranged on two sides of the main waveguide (212);
a lateral grating (210) is longitudinally arranged between the sub waveguide (211) and the main waveguide (212), and the lateral grating (210) is used for realizing the selection of a longitudinal mode;
the main waveguide (212) is provided with a P-surface electrode (209);
the higher order side modes of the main waveguide (212) are coupled with modes of the two-measurement waveguide (211) to form a lossy mode for realizing high-power fundamental side mode output.
2. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the super-symmetrical structure is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from visible light to middle and far infrared.
3. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the main waveguide (212) has a width corresponding to a width in a range from visible light to mid-far infrared to accommodate a corresponding number of modes.
4. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the width of the sub-waveguide (211) positioned at the left side of the main waveguide (212) corresponds to the width of the visible light to the middle-far infrared band, the number of the corresponding modes can be accommodated, and the distance between the left sub-waveguide (211) and the main waveguide (212) is 1-6 mu m.
5. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the width of the sub waveguide (211) positioned on the right side of the main waveguide (212) corresponds to the width of the visible light to the middle-far infrared band, the number of the corresponding modes can be accommodated, and the distance between the sub waveguide (211) on the right side and the main waveguide (212) is 1-6 mu m.
6. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the structure of the lateral grating (210) is an etching structure, and the etching depth corresponds to the etching depth which can accommodate the corresponding mode number in the range from visible light to middle and far infrared.
7. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the lateral grating (210) is consistent with the etch depth of the super-symmetric structure.
8. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the lateral grating (210) satisfies a grating bragg condition:where m is the lateral grating order, λ is the wavelength, n eff For effective index, Λ is the lateral grating period.
9. A super-symmetric semiconductor laser with lateral gratings as claimed in claim 1, wherein: the spacing between the gratings in the lateral gratings (210) is greater than 1um.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| CN110808530A (en) * | 2019-11-14 | 2020-02-18 | 中国科学院半导体研究所 | quasi-PT symmetrical double-ridge semiconductor laser and application thereof |
| CN112769037A (en) * | 2021-01-15 | 2021-05-07 | 中国科学院半导体研究所 | Bilateral coupling hypersymmetric semiconductor laser array, construction method and application thereof |
| US11152764B1 (en) * | 2018-11-20 | 2021-10-19 | Freedom Photonics Llc | Gratings for high power single mode laser |
| CN113948968A (en) * | 2020-07-16 | 2022-01-18 | 山东华光光电子股份有限公司 | Semiconductor laser for realizing base side mode lasing and preparation method thereof |
| CN114640020A (en) * | 2022-03-24 | 2022-06-17 | 中国科学院半导体研究所 | Super-symmetric semiconductor laser and application thereof |
-
2023
- 2023-08-31 CN CN202311108520.XA patent/CN116826522A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| US11152764B1 (en) * | 2018-11-20 | 2021-10-19 | Freedom Photonics Llc | Gratings for high power single mode laser |
| CN110808530A (en) * | 2019-11-14 | 2020-02-18 | 中国科学院半导体研究所 | quasi-PT symmetrical double-ridge semiconductor laser and application thereof |
| CN113948968A (en) * | 2020-07-16 | 2022-01-18 | 山东华光光电子股份有限公司 | Semiconductor laser for realizing base side mode lasing and preparation method thereof |
| CN112769037A (en) * | 2021-01-15 | 2021-05-07 | 中国科学院半导体研究所 | Bilateral coupling hypersymmetric semiconductor laser array, construction method and application thereof |
| CN114640020A (en) * | 2022-03-24 | 2022-06-17 | 中国科学院半导体研究所 | Super-symmetric semiconductor laser and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张建心;刘磊;陈微;渠红伟;郑婉华;: "光子晶体调制半导体激光器侧模", 红外与激光工程, no. 01 * |
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