CN107946902A - A kind of Distributed Feedback Laser and preparation method thereof - Google Patents
A kind of Distributed Feedback Laser and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
The present invention relates to field of laser device technology, there is provided a kind of Distributed Feedback Laser and preparation method thereof.Production method, which includes making on substrate, cushion, lower limit layer, active layer, upper limiting layer, etch stop layer and grating layer, when corroding ridge waveguide, makes ridge waveguide figure by lithography, ridge waveguide figure includes rectangle part and conical section；Conical section is arranged on the light extraction surface side of laser to be produced, wherein, the vertex of a cone is flushed with light-emitting surface, and cone bottom is connected with rectangle part；In conical section, the width of its vertex of a cone is smaller 0.3 0.5um than the width for boring bottom；Synchronously corrode the rectangle ridge waveguide and taper ridge waveguide for corresponding rectangle part and conical section.Conehead short-wavelength light reflects the cone bottom into big light field restriction factor region in the present invention, and bore bottom long wavelength light reflect into small light field restriction factor region the vertex of a cone and easily lasing comes out, overcome conventional double-bus network pattern, effectively improve the single mode yield of laser.
Description
【Technical field】
The present invention relates to field of laser device technology, more particularly to a kind of Distributed Feedback Laser and preparation method thereof.
【Background technology】
Silicon-based semiconductor is the foundation stone of modern microelectronic industry, but its development is close to the limit.And photoelectron technology is then just
The high speed development stage is in, present light emitting semiconductor device is prepared using compound-material more, but with silicon microelectronic technique not
Compatibility, therefore, photoelectron technology and microelectric technique are gathered, and development silicon based opto-electronics scarabaeidae and technical meaning are great.
In recent years, the research of silicon based opto-electronics at home and abroad constantly obtains noticeable important breakthrough, each developed country of the world all
Silicon based opto-electronics is used as long term growth target.As the growing of silicon-based photonics integration circuit is with being progressively commercialized, by InP-base
High power laser has great application prospect instead of silicon substrate laser together with silicon based photon integrated chip.
The difficult point of high power D FB lasers is at a temperature of different operating (- 45 DEG C~85 DEG C) at present, meets output light
While power, side mode suppression ratio (Side-mode Suppression Ratio, be abbreviated as SMSR) must also reach requirement.
Under normal circumstances, by increasing chamber length and electric current injection luminous power can be improved, but the output light under high temperature or low temperature condition
The SMSR of spectrum can be problematic, can not meet use demand.Therefore when InP-base high power laser is designed, it is necessary to
Set about at the same time in terms of epitaxial structure and process implementing two.
There are InP-base 1310nm high power D FB lasers in company and laboratory some to study and report both at home and abroad at present,
2007, P.Doussiere et al. reported the 1.3um high power D FB laser designed and produced that JDSU companies use large-optical-cavity
Device.Large optical cavity structure can reduce series resistance, thermal resistance, moreover it is possible to which the angle of divergence for reducing output beam is imitated so as to improve fiber coupling
Rate.
In consideration of it, the defects of overcoming present in the prior art is the art urgent problem to be solved.
【The content of the invention】
Under conditions of spectral patterns when taking into account different operating temperature, how to try one's best
The Output optical power of laser is improved, improves single mode yield.
The present invention adopts the following technical scheme that：
In a first aspect, the present invention provides a kind of production method of Distributed Feedback Laser, make on substrate have cushion, under
Limiting layer, active layer, upper limiting layer, etch stop layer and grating layer, when corroding ridge waveguide, method includes：
Make ridge waveguide figure by lithography, the ridge waveguide figure includes rectangle part and conical section；
The conical section is arranged on the light extraction surface side of laser to be produced, wherein, the vertex of a cone is flushed with light-emitting surface, bores bottom
It is connected with rectangle part；
In the conical section, the width of its vertex of a cone is smaller 0.3-0.5um than the width for boring bottom；
Synchronously corrode the rectangle ridge waveguide and taper ridge waveguide for corresponding rectangle part and conical section.
Preferably, the cone bottom of the taper ridge waveguide and the width Wr of rectangle ridge waveguide-coupled are 1.4-2.5um, the vertex of a cone
Width Wt is fewer 0.3-0.5um than the width Wr at the cone bottom；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
Preferably, it is described on substrate make have cushion, lower limit layer, active layer, upper limiting layer, etch stop layer and
Grating layer, specifically includes：
N-InP cushions 2 are grown in InP substrate 1；
Grow the InAlGaAs layers 4 of N-InAlAs layers 3 and Al content gradually variationals successively on N-InP cushions 2, wherein, institute
State N-InAlAs layers 3 and InAlGaAs layers 4 form lower limit layer；
Multiple quantum well active layer 5 is grown on InAlGaAs layers 4；
Grow the InAlGaAs layers 6 and P-InAlAs layers 7 of Al content gradually variationals successively in multiple quantum well active layer 5, wherein,
The InAlGaAs layers 6 and P-InAlAs layers 7 constitute upper limiting layer；
P-InP space layers 8, etch stop layer 9, InP cushions 10 and grating layer are grown successively in P-InAlAs layers 7
11, grating is made using holography method or electron beam exposure legal system；Bury and complete Distributed Feedback Laser epitaxial growth.
Preferably, 2 thickness of N-InP cushions is 500-800um, doping concentration 1*1018-3*1018cm-3。
Preferably, 3 thickness of N-InAlAs layers is about 70-100nm, doping concentration 1*1017-3*1017cm-3；Al groups
It is 50-70nm to divide 4 thickness of graded bedding InAlGaAs layers；7 thickness of P-InAlAs layers is about 50-80nm, doping concentration 1*1017-
3*1017cm-3；6 thickness of Al content gradually variational layer InAlGaAs layers is 45-65nm.
Preferably, Quantum Well is AlGaInAs materials, 5-9 pairs of Quantum Well number.
Preferably, it is described on substrate make have cushion, lower limit layer, active layer, upper limiting layer, etch stop layer and
Grating layer, specifically includes：
Successively according to substrate layer 1-0, cushion 1-1, the first gradual change limiting layer 1-2, first wave conducting shell 1-3, the second limitation
Layer 1-4, the first Quantum Well barrier layer 1-5, mqw active layer 1-6, the second Quantum Well barrier layer 1-7, second waveguide layer 1-8, corrosion
The order growth of stop-layer 1-9, grating layer 1-10, the 3rd gradual change limiting layer 1-11, ohmic contact layer 1-12, wherein,
Substrate 1-0, it is N-type layer of InP；
Cushion 1-1, it is N-type layer of InP；
First gradual change limiting layer 1-2, it is N-type InAlxGa1-xAs layers, x=0.5-0.1；
First wave conducting shell 1-3, it is N-type layer of InP；
Second limiting layer 1-4, it is N-type InAl0.5Ga0.5As；
First Quantum Well barrier layer 1-5, it is undoped Al0.3Ga0.7InAs layers；
Mqw active layer 1-6, it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer；
Second Quantum Well barrier layer 1-7, it is undoped Al0.3Ga0.7InAs layers；
Second waveguide layer 1-8, it is p-type Al0.5Ga0.5As layers；
Etch stop layer 1-9, it is N-type InGaAsP layer；
Grating layer 1-10, it is p-type Al0.5Ga0.5As layers；
3rd gradual change limiting layer 1-11, it is p-type AlxGa1-xAs layers, x=0.5-0.1；
Ohmic contact layer 1-12, it is InGaAs layers of p-type.
Second aspect, the present invention provides a kind of Distributed Feedback Laser, including substrate, cushion, lower limit layer, active layer, on
Limiting layer, etch stop layer and grating layer, specifically include：
Growth has N-InP cushions 2 in InP substrate 1；
Growth has the InAlGaAs layers 4 of N-InAlAs layers 3 and Al content gradually variationals successively on N-InP cushions 2；
Growth has multiple quantum well active layer 5 on graded bedding；
Growth has the InAlGaAs layers 6 and P-InAlAs layers 7 of Al content gradually variationals successively in multiple quantum well active layer 5；
Being grown successively in P-InAlAs layers 7 has P-InP space layers 8, etch stop layer 9；
InP cushions 10, grating layer 11, P-InP space layers 12 and p-InGaAs Europe on the etch stop layer 9
Being made on nurse contact layer 13 has ridge waveguide structure；Also, the light extraction surface side of the ridge waveguide is fabricated to taper ridge waveguide, wherein,
The cone bottom of taper ridge waveguide is 1.4-2.5um with the width Wr of rectangle ridge waveguide-coupled, and the width Wt of the vertex of a cone is than the cone bottom
Width Wr lacks 0.3-0.5um；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
Preferably, growth has composite membrane 14 on the p-InGaAs ohmic contact layers 13, also, composite membrane is located at ridge ripple
Lead region and offer conductive trough, when the conductive trough is used to grow metal layer 15 in 14 upper surface of composite membrane, realize ridge ripple
Lead conducting for p-InGaAs ohmic contact layers 13 and metal layer 15.
The third aspect, present invention also offers a kind of Distributed Feedback Laser, each Rotating fields include successively from down to up：
Substrate 1-0, it is N-type layer of InP；
Cushion 1-1, it is N-type layer of InP and is formed on substrate 1-0；
First gradual change limiting layer 1-2, it is N-type InAlxGa1-xAs layers and it is formed on cushion 1-1, x=0.5-0.1；
First wave conducting shell 1-3, it is N-type layer of InP and is formed on the first gradual change limiting layer 1-2；
Second limiting layer 1-4, it is N-type InAl0.5Ga0.5As layers and it is formed on first wave conducting shell 1-3；
First Quantum Well barrier layer 1-5, it is undoped Al0.3Ga0.7InAs layers and it is formed on the second limiting layer 1-4；
Mqw active layer 1-6, it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer and is formed at the first quantum
On trap barrier layer 1-5；
Second Quantum Well barrier layer 1-7, it is undoped Al0.3Ga0.7InAs layers and it is formed on mqw active layer 1-6；
Second waveguide layer 1-8, it is p-type Al0.5Ga0.5As layers and it is formed on the second Quantum Well barrier layer 1-7；
Etch stop layer 1-9 is grown, it is to be formed on second waveguide layer 1-8；
The double ditch platform structures of ridge are formed, the double ditch platform structures of the ridge include the first backbone, ridge waveguide and the second backbone, institute
State and the first raceway groove is formed between the first backbone and ridge waveguide, the second raceway groove is formed between second backbone and ridge waveguide；Also,
The light extraction surface side of the ridge waveguide is fabricated to taper ridge waveguide, wherein, cone bottom and the rectangle ridge waveguide-coupled of taper ridge waveguide
Width Wr is 1.4-2.5um, and the width Wt of the vertex of a cone is fewer 0.3-0.5um than the width Wr at the cone bottom；Light-emitting surface taper ridge waveguide
Length Lt is 5-10um, and the first backbone, ridge waveguide and the second backbone include：
Grating layer 1-10, it is p-type Al0.5Ga0.5As layers and it is formed on etch stop layer 1-9；
3rd gradual change limiting layer 1-11, it is p-type AlxGa1-xAs layers and it is formed at x=0.5-0.1 on grating layer 1-10；
Ohmic contact layer 1-12, it is InGaAs layers of p-type and is formed on the 3rd gradual change limiting layer 1-11；
Insulating medium layer 1-13, it is SiO2Layer is simultaneously formed on ohmic contact layer 1-12, and covers the first backbone, first
Raceway groove, the second backbone, the subregion of the second raceway groove and ridge waveguide；
P-type top electrode 1-14, it is TiPtAu layer and is formed on ohmic contact layer 1-12；
N-type bottom electrode 1-15, it is Au-Sn layer and is formed at below substrate 1-0.
Compared with prior art, the beneficial effects of the present invention are：
The taper ridge waveguide that the present invention makes and the laser with taper ridge waveguide structure, in tapered ridge waveguide front-ends, have
Imitate refractive index and light field restriction factor is small, and it is big in taper ridge waveguide rear end, effective refractive index and light field restriction factor, when two
When longitudinal mode transmits in the waveguide, since tapered ridge waveguide front-ends effective refractive index is small, it is easier to reflecting short wavelength light, rear end
Effective refractive index is big, it is easier to long wavelength light is reflected, but since the light field restriction factor at tapered ridge waveguide both ends is different, this
Sample, short-wavelength light enters big light field restriction factor region after reflecting, and long wavelength light is reflected and limited into small light field
Region and easily lasing comes out, broken the double-bus network pattern of conventional symmetric, effectively improved the single mode finished product of laser
Rate.
【Brief description of the drawings】
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the correspondence figure of taper ridge waveguide and effective refractive index provided in an embodiment of the present invention；
Fig. 2 is a kind of Distributed Feedback Laser production method flow chart provided in an embodiment of the present invention；
Fig. 3 is the top view of taper ridge waveguide provided in an embodiment of the present invention；
Fig. 4 is the scale diagrams of taper ridge waveguide provided in an embodiment of the present invention；
Fig. 5 is a kind of processing method flow chart of Distributed Feedback Laser epitaxial wafer provided in an embodiment of the present invention；
Fig. 6 is a kind of Distributed Feedback Laser epitaxial slice structure schematic diagram provided in an embodiment of the present invention；
Fig. 7 is another Distributed Feedback Laser structure diagram provided in an embodiment of the present invention；
Fig. 8 is a kind of Distributed Feedback Laser structure diagram provided in an embodiment of the present invention；
Fig. 9 is conventional ridge waveguide structure and taper ridge waveguide structure under the conditions of a kind of 85 DEG C provided in an embodiment of the present invention
PIV curve maps；
Figure 10 is a kind of improved Distributed Feedback Laser structure diagram provided in an embodiment of the present invention；
Figure 11 is a kind of electric leakage schematic diagram of improved Distributed Feedback Laser structure provided in an embodiment of the present invention；
Figure 12 is the electric leakage schematic diagram of another Distributed Feedback Laser structure provided in an embodiment of the present invention.
【Embodiment】
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In the description of the present invention, term " interior ", " outer ", " longitudinal direction ", " transverse direction ", " on ", " under ", " top ", " bottom " etc. refer to
The orientation or position relationship shown be based on orientation shown in the drawings or position relationship, be for only for ease of the description present invention rather than
It is required that the present invention must be with specific azimuth configuration and operation, therefore it is not construed as limitation of the present invention.
Pay attention to：" PLC electrodes ", " PLC plates ", " LD electrodes " in exemplary embodiments below, " LD chips " and " LD modules "
Corresponding to " substrate-side electrode " in scope, " substrate ", " chip lateral electrode ", " semiconductor laser chip "
The respective examples of " semiconductor laser module ".
In various embodiments of the present invention, symbol "/" represents the implication at the same time with two kinds, such as " the second entry/exit light
Mouthful " show that the port both can also light extraction with entering light.And for symbol, " A and/or B " then show before and after being connected by the symbol
Combination between object include " A ", " B ", " three kinds of situations of A and B ", such as " back-scattering light and/or reflected light ", then show it
It can express single " back-scattering light ", single " reflected light ", and in " back-scattering light and reflected light " three kinds of implications
It is one of any.
The present invention effectively raises injection efficiency and spectral patterns by the light-emitting surface tapered ridge waveguide design of grating
Take into account, compared to conventional ridge waveguide structure, can effectively improve single longitudinal mode yield rate.In conventional DFB, there is uniform grating
The single longitudinal mode operation probability of laser depend on phase at Cavity surface, in actual laser, the reflectivity of two end faces
All it is not zero, at this moment end face reflection shows great uncertainty, and the reflection from grating end face there are two coefficients, and one is
Reflected intensity, that is, reflectivity size, secondly being phase, that is to say, that the end face of grating is in the position of screen periods, for reality
Laser, the extremely difficult control in position of grating end face, so reflection the problem of being one random, shows in practical devices and is exactly
The problem of single mode yield.In the taper ridge waveguide structure of the present invention, conical section linear change, its effective refractive index and light
Learning restriction factor can also change as shown in Figure 1, can be by adjusting the ginseng of taper ridge waveguide with the change of taper ridge waveguide
Number, spatially adjusts effective refractive index and Optical confinement factor respectively.In this way, in tapered ridge waveguide front-ends, effective refractive index
It is small with light field restriction factor, and it is big in taper ridge waveguide rear end, effective refractive index and light field restriction factor, when two longitudinal modes are in ripple
When leading middle transmission, since tapered ridge waveguide front-ends effective refractive index is small, it is easier to which reflecting short wavelength light, rear end effectively reflect
Rate is big, it is easier to long wavelength light is reflected, but since the light field restriction factor at tapered ridge waveguide both ends is different, in this way, short wavelength
Light reflection enters big light field restriction factor region after returning, and long wavelength light is reflected into small light field restriction factor region and
Easily lasing comes out, and has broken the double-bus network pattern of conventional symmetric, effectively improves the single mode yield of laser.
In addition, as long as technical characteristic involved in each embodiment of invention described below is each other not
Forming conflict can be mutually combined.
Embodiment 1:
The embodiment of the present invention 1 provides a kind of production method of Distributed Feedback Laser, and make has cushion, lower limit on substrate
Preparative layer, active layer, upper limiting layer, etch stop layer and grating layer, it is characterised in that when corroding ridge waveguide, as shown in Fig. 2,
Method includes：
In step 201, ridge waveguide figure is made by lithography, the ridge waveguide figure includes rectangle part and conical section.
As shown in figure 3, by a top view and dotted line frame, 32 He of rectangle part in the ridge waveguide figure has been marked out
Conical section 31.
In step 202, the conical section is arranged on the light extraction surface side of laser to be produced, wherein, the vertex of a cone 311 with
Light-emitting surface flushes, and cone bottom 312 is connected with rectangle part.
In step 203, in the conical section, the width of its vertex of a cone is smaller 0.3-0.5um than the width for boring bottom.
In step 204, the rectangle ridge waveguide and taper ridge waveguide for corresponding rectangle part and conical section are synchronously corroded.
The embodiment of the present invention make taper ridge waveguide, in tapered ridge waveguide front-ends, effective refractive index and light field limitation because
Son is small, and big in taper ridge waveguide rear end, effective refractive index and light field restriction factor, when two longitudinal modes transmit in the waveguide
Wait, since tapered ridge waveguide front-ends effective refractive index is small, it is easier to which reflecting short wavelength light, rear end effective refractive index are big, it is easier to
Long wavelength light is reflected, but since the light field restriction factor at tapered ridge waveguide both ends is different, in this way, after short-wavelength light reflects
Into big light field restriction factor region, and long wavelength light is reflected into small light field restriction factor region and easily lasing goes out
Come, broken the double-bus network pattern of conventional symmetric, effectively improved the single mode yield of laser.
As shown in figure 4, to combine the parameter of one group provided in an embodiment of the present invention feasible related conical section, specifically
The cone bottom of the taper ridge waveguide and the width Wr of rectangle ridge waveguide-coupled are 1.4-2.5um, and the width Wt of the vertex of a cone is than the cone
The width Wr at bottom lacks 0.3-0.5um；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
Being related to described make on substrate in embodiments of the present invention has cushion, lower limit layer, active layer, upper limitation
Layer, etch stop layer and grating layer, therefore, as shown in Figure 5, there is provided one group of feasible implementation, it is outer with reference to shown in figure 6
Prolong chip architecture figure, specifically include：
In step 301, N-InP cushions 2 are grown in InP substrate 1.
In step 302, the InAlGaAs of N-InAlAs layers 3 and Al content gradually variationals is grown successively on N-InP cushions 2
Layer 4, wherein, the N-InAlAs layers 3 and InAlGaAs layers 4 form lower limit layer.
In step 303, multiple quantum well active layer 5 is grown on InAlGaAs layers 4.
In step 304, the InAlGaAs layers 6 and P- of Al content gradually variationals are grown successively in multiple quantum well active layer 5
InAlAs layers 7, wherein, the InAlGaAs layers 6 and P-InAlAs layers 7 constitute upper limiting layer.
In step 305, P-InP space layers 8, etch stop layer 9, InP cushions are grown successively in P-InAlAs layers 7
10 and grating layer 11, grating is made using holography method or electron beam exposure legal system；Bury and complete Distributed Feedback Laser epitaxial growth.
Wherein, above layers growing method can use MOCVD or MBE.Etch stop layer 9 is specifically by p-
InGaAsP is formed, and the grating layer 11 is specifically formed by p-InGaAsP.After execution of step 301-305, just possesses use
In the preparatory condition for performing step 201-204.
With reference to the embodiment of the present invention, there are a kind of optional implementation, in step 301, the N-InP cushions 2
Thickness is 500-800um, doping concentration 1*1018-3*1018cm-3.Each Rotating fields of laser are completed in final growth to be beaten
During thin processing, the cushion 2 can be thinned, until whole chip thickness reaches 100-200um.
With reference to the embodiment of the present invention, there are a kind of optional implementation, in step 302 and step 304, the N-
3 thickness of InAlAs layers is about 70-100nm, doping concentration 1*1017-3*1017cm-3；Al content gradually variational layer InAlGaAs layers 4 are thick
Spend for 50-70nm；7 thickness of P-InAlAs layers is about 50-80nm, doping concentration 1*1017-3*1017cm-3；Al content gradually variational layers
6 thickness of InAlGaAs layers is 45-65nm.
Wherein, asymmetric limiting layer design (including upper limiting layer and lower limit layer), improves the limitation capability of ducting layer, subtracts
Few laser internal loss, improves quantum efficiency.
In embodiments of the present invention, optionally, Quantum Well is AlGaInAs materials, 5-9 pairs of Quantum Well number.
Being related to described make on substrate in embodiments of the present invention has cushion, lower limit layer, active layer, upper limitation
Layer, etch stop layer and grating layer, there is provided another group of feasible implementation, with reference to figure 7 thus epitaxial slice structure figure, according to
It is secondary according to substrate layer 1-0, cushion 1-1, the first gradual change limiting layer 1-2, first wave conducting shell 1-3, the second limiting layer 1-4, first
Quantum Well barrier layer 1-5, mqw active layer 1-6, the second Quantum Well barrier layer 1-7, second waveguide layer 1-8, etch stop layer 1-9,
The order growth of grating layer 1-10, the 3rd gradual change limiting layer 1-11, ohmic contact layer 1-12, specifically include：
Substrate 1-0, it is N-type layer of InP；
Cushion 1-1, it is N-type layer of InP；
First gradual change limiting layer 1-2, it is N-type InAlxGa1-xAs layers, x=0.5-0.1；
First wave conducting shell 1-3, it is N-type layer of InP；
Second limiting layer 1-4, it is N-type InAl0.5Ga0.5As；
First Quantum Well barrier layer 1-5, it is undoped Al0.3Ga0.7InAs layers；
Mqw active layer 1-6, it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer；
Second Quantum Well barrier layer 1-7, it is undoped Al0.3Ga0.7InAs layers；
Second waveguide layer 1-8, it is p-type Al0.5Ga0.5As layers；
Etch stop layer 1-9, it is N-type InGaAsP layer；
Grating layer 1-10, it is p-type Al0.5Ga0.5As layers；
3rd gradual change limiting layer 1-11, it is p-type AlxGa1-xAs layers, x=0.5-0.1；
Ohmic contact layer 1-12, it is InGaAs layers of p-type.
Embodiment 2:
In embodiments of the present invention, in addition to Distributed Feedback Laser production method as described in Example 1 is provided, additionally provide
As described in embodiment 1 production method complete Distributed Feedback Laser structure, as shown in figure 8, including substrate, cushion, lower limit layer,
Active layer, upper limiting layer, etch stop layer and grating layer, specifically include：
Growth has N-InP cushions 2 in InP substrate 1；
Growth has the InAlGaAs layers 4 of N-InAlAs layers 3 and Al content gradually variationals successively on N-InP cushions 2；
Growth has multiple quantum well active layer 5 on graded bedding；
Growth has the InAlGaAs layers 6 and P-InAlAs layers 7 of Al content gradually variationals successively in multiple quantum well active layer 5；
Being grown successively in P-InAlAs layers 7 has P-InP space layers 8, etch stop layer 9；
InP cushions 10, grating layer 11, P-InP space layers 12 and p-InGaAs Europe on the etch stop layer 9
Being made on nurse contact layer 13 has ridge waveguide structure；Also, the light extraction surface side of the ridge waveguide is fabricated to taper ridge waveguide, wherein,
The cone bottom of taper ridge waveguide is 1.4-2.5um with the width Wr of rectangle ridge waveguide-coupled, and the width Wt of the vertex of a cone is than the cone bottom
Width Wr lacks 0.3-0.5um；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
With reference to the embodiment of the present invention, the elaboration of full laser device structure is further used as, it is further included, in the p-InGaAs
Growth has composite membrane 14 on ohmic contact layer 13, also, composite membrane is located at ridge waveguide region and offers conductive trough, the conductive trough
During for growing metal layer 15 in 14 upper surface of composite membrane, p-InGaAs ohmic contact layers 13 and metal on ridge waveguide are realized
Layer 15 conducts.
The laser structure obtained made by the embodiment of the present invention, suitable for InP-base 1310nm high power D FB lasers.
As shown in figure 9, the Distributed Feedback Laser of the taper ridge waveguide structure proposed by the embodiment of the present invention and existing conventional rectangular wave crest ripple
PIV curve experiments comparison diagrams between the Distributed Feedback Laser of guide structure.As can be seen that under identical operating current, the present invention is implemented
The Distributed Feedback Laser structure that example is proposed can also bring obvious power to improve.
Embodiment 3:
In embodiments of the present invention, in addition to Distributed Feedback Laser production method as described in Example 1 is provided, additionally provide
The Distributed Feedback Laser structure that the production method as described in embodiment 1 is completed, as shown in fig. 7, each Rotating fields include successively from down to up：
Substrate 1-0, it is N-type layer of InP；
Cushion 1-1, it is N-type layer of InP and is formed on substrate 1-0；
First gradual change limiting layer 1-2, it is N-type InAlxGa1-xAs layers and it is formed on cushion 1-1, x=0.5-0.1；
First wave conducting shell 1-3, it is N-type layer of InP and is formed on the first gradual change limiting layer 1-2；
Second limiting layer 1-4, it is N-type InAl0.5Ga0.5As layers and it is formed on first wave conducting shell 1-3；
First Quantum Well barrier layer 1-5, it is undoped Al0.3Ga0.7InAs layers and it is formed on the second limiting layer 1-4；
Mqw active layer 1-6, it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer and is formed at the first quantum
On trap barrier layer 1-5；
Second Quantum Well barrier layer 1-7, it is undoped Al0.3Ga0.7InAs layers and it is formed on mqw active layer 1-6；
Second waveguide layer 1-8, it is p-type Al0.5Ga0.5As layers and it is formed on the second Quantum Well barrier layer 1-7；
Etch stop layer 1-9 is grown, it is to be formed on second waveguide layer 1-8；
The double ditch platform structures of ridge are formed, the double ditch platform structures of the ridge include the first backbone, ridge waveguide and the second backbone, institute
State and the first raceway groove is formed between the first backbone and ridge waveguide, the second raceway groove is formed between second backbone and ridge waveguide；Also,
The light extraction surface side of the ridge waveguide is fabricated to taper ridge waveguide, wherein, cone bottom and the rectangle ridge waveguide-coupled of taper ridge waveguide
Width Wr is 1.4-2.5um, and the width Wt of the vertex of a cone is fewer 0.3-0.5um than the width Wr at the cone bottom；Light-emitting surface taper ridge waveguide
Length Lt is 5-10um, and the first backbone, ridge waveguide and the second backbone include：
Grating layer 1-10, it is p-type Al0.5Ga0.5As layers and it is formed on etch stop layer 1-9；
3rd gradual change limiting layer 1-11, it is p-type AlxGa1-xAs layers and it is formed at x=0.5-0.1 on grating layer 1-10；
Ohmic contact layer 1-12, it is InGaAs layers of p-type and is formed on the 3rd gradual change limiting layer 1-11；
Insulating medium layer 1-13, it is SiO2Layer is simultaneously formed on ohmic contact layer 1-12, and covers the first backbone, first
Raceway groove, the second backbone, the subregion of the second raceway groove and ridge waveguide；
P-type top electrode 1-14, it is TiPtAu layer and is formed on ohmic contact layer 1-12；
N-type bottom electrode 1-15, it is Au-Sn layer and is formed at below substrate 1-0.
The Distributed Feedback Laser structure that the embodiment of the present invention is given is suitable for high-speed laser application field.
Embodiment 4:
In embodiments of the present invention, in addition to Distributed Feedback Laser production method as described in Example 1 is provided, additionally provide
The Distributed Feedback Laser structure that the production method as described in embodiment 1 is completed, the embodiment of the present invention are substantially the electric leakage to embodiment 3
Further improvement in terms of stream, so as to improve Frequency Response.As shown in Figure 10, each Rotating fields include successively from down to up：
Substrate 2-0, it is N-type layer of InP；
Cushion 2-1, it is N-type layer of InP and is formed on substrate 2-0；
First gradual change limiting layer 2-2, it is N-type InAlxGa1-xAs layers and it is formed on cushion 2-1, x=0.5-0.1；
Etch stop layer 2-3, it is N-type InGaAsP layer and is formed on the first gradual change limiting layer 2-2；
The double ditch platform structures of ridge are formed on the etch stop layer 2-3, the double ditch platform structures of the ridge specifically include：
First wave conducting shell 2-4, it is N-type layer of InP and is formed on etch stop layer 2-3；
Second limiting layer 2-5, it is N-type InAl0.5Ga0.5As layers and it is formed on first wave conducting shell 2-4；
First Quantum Well barrier layer 2-6, it is undoped Al0.3Ga0.7InAs layers and it is formed on the second limiting layer 2-5；
Mqw active layer 2-7, it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer and is formed at the first quantum
On trap barrier layer 2-6；
Second Quantum Well barrier layer 2-8, it is undoped Al0.3Ga0.7InAs layers and it is formed on mqw active layer 2-7；
Second waveguide layer 2-9, it is p-type Al0.5Ga0.5As layers and it is formed on the second Quantum Well barrier layer 2-8；
Grating layer 2-10, it is p-type Al0.5Ga0.5As layers and it is formed on second waveguide layer 2-9；
3rd gradual change limiting layer 2-11, it is p-type AlxGa1-xAs layers and it is formed at x=0.5-0.1 on grating layer 2-10；
Ohmic contact layer 2-12, it is InGaAs layers of p-type and is formed on the 3rd gradual change limiting layer 2-11；
Insulating medium layer 2-13, it is SiO2Layer is simultaneously formed on ohmic contact layer 2-12；
The insulating medium layer 2-13 also covers first wave conducting shell 2-4, the second limiting layer in the double ditch platform structures of the ridge
2-5, the first Quantum Well barrier layer 2-6, mqw active layer 2-7, the second Quantum Well barrier layer 2-8, second waveguide layer 2-9, grating layer
The section that 2-10, the 3rd gradual change limiting layer 2-11 and ohmic contact layer 2-12 are formed in corrosion process.
P-type top electrode 2-14, it is TiPtAu layer and is formed on ohmic contact layer 2-12；
N-type bottom electrode 2-15, it is Au-Sn layer and is formed at below substrate 2-0.
The embodiment of the present invention redesigns the locations of structures of corrosion layer.(its schematic diagram is shown in Figure 11) as shown in Figure 10, with reality
Apply for the structure (its schematic diagram is shown in Figure 12) that example 3 is proposed, easily produce a large amount of leakage currents, the threshold value of laser increases, together
When can also increase capacitance C, influence the Frequency Response of laser, leakage current can be reduced, and capacitance C also can be reduced accordingly, to whole high
The photoelectric characteristic of fast laser is significantly improved.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the thickness of the etch stop layer 2-3 is
100nm。
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the thickness of the insulating medium layer 2-13 is
250nm, refractive index 1.5.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the thickness of the p-type top electrode 2-14 is 2 μ
m。
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the thickness of the N-type bottom electrode 2-15 is
300nm。
Said structure is typically after growth obtains including each Rotating fields epitaxial wafers of 2-1 to 2-12, in ohmic contact layer 2-
The photoresist of 2 μ m-thicks is coated on 12 and is toasted in the range of 88-92 DEG C, then by exposure imaging in ohmic contact layer 2-12
On make photoetching offset plate figure (i.e. tapered ridge waveguide pattern) and toasted in the range of 118-122 DEG C, in the photoresist masking
Under, erode ohmic contact layer 2-12, gradual change limiting layer 2-11, ducting layer 2-10, second waveguide layer 2-9, the second Quantum Well and build
Layer 2-8, mqw active layer 2-7, the first Quantum Well barrier layer 2-6, the second limiting layer 2-5, then corrode first wave conducting shell 2-4, directly
To etch stop layer 2-3, to be processed into the double ditch mesa structures of ridge, deposited on the double ditch mesa structures of whole ridge
The insulating medium layer 2-13 of 250nm thickness, and opened up out using photolithography method and caustic solution on table top ohmic contact layer 2-12
Window；
The TiPtAu layers of 2 μ m-thicks are sputtered on ohmic contact layer 2-12, make p-type top electrode 2-14；
It is thinned and polishes substrate 2-0 to 100 μm, makes N-type bottom electrode 2-15, obtain the chip of laser structure.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the method for the extension generation is outside molecular beam
Prolong method or metallorganic chemical vapor deposition method.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the ohmic contact layer 2-12, gradually of eroding
Become limiting layer 2-11, ducting layer 2-10, second waveguide layer 2-9, the second Quantum Well barrier layer 2-8, mqw active layer 2-7, first
Quantum Well barrier layer 2-6, the corrosive liquid of the second limiting layer 2-5 are specially saturation bromine water corrosive liquid.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the width of the photoetching offset plate figure is 2-3 μm.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the corrosive liquid tool of corrosion first wave conducting shell 2-4
Body is：Volume ratio is 1:2 HCl and H3PO4Mixed liquor.
With reference to the embodiment of the present invention, there are a kind of preferable scheme, wherein, the width of the window is 3-4 μm.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of production method of Distributed Feedback Laser, make on substrate have cushion, lower limit layer, active layer, upper limiting layer,
Etch stop layer and grating layer, it is characterised in that when corroding ridge waveguide, method includes：
Make ridge waveguide figure by lithography, the ridge waveguide figure includes rectangle part and conical section；
The conical section is arranged on the light extraction surface side of laser to be produced, wherein, the vertex of a cone is flushed with light-emitting surface, bores bottom and square
Shape part is connected；
In the conical section, the width of its vertex of a cone is smaller 0.3-0.5um than the width for boring bottom；
Synchronously corrode the rectangle ridge waveguide and taper ridge waveguide for corresponding rectangle part and conical section.
2. the production method of Distributed Feedback Laser according to claim 1, it is characterised in that the cone bottom of the taper ridge waveguide
Width Wr with rectangle ridge waveguide-coupled is 1.4-2.5um, and the width Wt of the vertex of a cone is fewer 0.3- than the width Wr at the cone bottom
0.5um；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
3. the production method of Distributed Feedback Laser according to claim 1, it is characterised in that the making on substrate has slow
Layer, lower limit layer, active layer, upper limiting layer, etch stop layer and grating layer are rushed, is specifically included：
N-InP cushions (2) are grown in InP substrate (1)；
Grow the InAlGaAs layers (4) of N-InAlAs layers (3) and Al content gradually variationals successively on N-InP cushions (2), wherein,
N-InAlAs layers described (3) and InAlGaAs layers (4) form lower limit layer；
Multiple quantum well active layer (5) is grown on InAlGaAs layers (4)；
Grown successively in multiple quantum well active layer (5) Al content gradually variationals InAlGaAs layers (6) and P-InAlAs layers (7), its
In, InAlGaAs layers described (6) and P-InAlAs layers (7) constitute upper limiting layer；
P-InP space layers (8), etch stop layer (9), InP cushions (10) and grating are grown successively P-InAlAs layers (7)
Layer (11), makees grating using holography method or electron beam exposure legal system；Bury and complete Distributed Feedback Laser epitaxial growth.
4. the production method of Distributed Feedback Laser according to claim 3, it is characterised in that the N-InP cushions (2) are thick
Spend for 500-800um, doping concentration 1*1018-3*1018cm-3。
5. the production method of Distributed Feedback Laser according to claim 3, it is characterised in that N-InAlAs layers described (3) thickness
About 70-100nm, doping concentration 1*1017-3*1017cm-3；InAlGaAs layers of (4) thickness of Al content gradually variational layers are 50-
70nm；P-InAlAs layers of (7) thickness are about 50-80nm, doping concentration 1*1017-3*1017cm-3；Al content gradually variational layers
InAlGaAs layers of (6) thickness are 45-65nm.
6. according to the production method of the Distributed Feedback Laser described in claim 3, it is characterised in that Quantum Well is AlGaInAs materials
Material, 5-9 pairs of Quantum Well number.
7. according to the production method of the Distributed Feedback Laser described in claim 1, it is characterised in that described make on substrate has
Cushion, lower limit layer, active layer, upper limiting layer, etch stop layer and grating layer, specifically include：
Successively according to substrate layer (1-0), cushion (1-1), the first gradual change limiting layer (1-2), first wave conducting shell (1-3), second
Limiting layer (1-4), the first Quantum Well barrier layer (1-5), mqw active layer (1-6), the second Quantum Well barrier layer (1-7), the second ripple
Conducting shell (1-8), etch stop layer (1-9), grating layer (1-10), the 3rd gradual change limiting layer (1-11), ohmic contact layer (1-12)
Order growth, wherein,
Substrate (1-0), it is N-type layer of InP；
Cushion (1-1), it is N-type layer of InP；
First gradual change limiting layer (1-2), it is N-type InAlxGa1-xAs layers, x=0.5-0.1；
First wave conducting shell (1-3), it is N-type layer of InP；
Second limiting layer (1-4), it is N-type InAl0.5Ga0.5As；
First Quantum Well barrier layer (1-5), it is undoped Al0.3Ga0.7InAs layers；
Mqw active layer (1-6), it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer；
Second Quantum Well barrier layer (1-7), it is undoped Al0.3Ga0.7InAs layers；
Second waveguide layer (1-8), it is p-type Al0.5Ga0.5As layers；
Etch stop layer (1-9), it is N-type InGaAsP layer；
Grating layer (1-10), it is p-type Al0.5Ga0.5As layers；
3rd gradual change limiting layer (1-11), it is p-type AlxGa1-xAs layers, x=0.5-0.1；
Ohmic contact layer (1-12), it is InGaAs layers of p-type.
8. a kind of Distributed Feedback Laser, it is characterised in that including substrate, cushion, lower limit layer, active layer, upper limiting layer, corrosion
Stop-layer and grating layer, specifically include：
Growth has N-InP cushions (2) in InP substrate (1)；
Growth has the InAlGaAs layers (4) of N-InAlAs layers (3) and Al content gradually variationals successively on N-InP cushions (2)；
Growth has multiple quantum well active layer (5) on graded bedding；
Grow the InAlGaAs layers (6) for there are Al content gradually variationals and P-InAlAs layers (7) successively in multiple quantum well active layer (5)；
P-InAlAs layers (7), growth has P-InP space layers (8), etch stop layer (9) successively；
InP cushions (10), grating layer (11), P-InP space layers (12) and p- on the etch stop layer (9)
Being made on InGaAs ohmic contact layers (13) has ridge waveguide structure；Also, the light extraction surface side of the ridge waveguide is fabricated to tapered ridge
Waveguide, wherein, the cone bottom of taper ridge waveguide and the width Wr of rectangle ridge waveguide-coupled are 1.4-2.5um, the width Wt ratios of the vertex of a cone
The width Wr at the cone bottom lacks 0.3-0.5um；Light-emitting surface tapered ridge waveguide length Lt is 5-10um.
9. Distributed Feedback Laser according to claim 8, it is characterised in that on the p-InGaAs ohmic contact layers (13)
Growth has composite membrane (14), also, composite membrane is located at ridge waveguide region and offers conductive trough, and the conductive trough is used for described multiple
When closing film (14) upper surface growth metal layer (15), p-InGaAs ohmic contact layers (13) and metal layer (15) on ridge waveguide are realized
Conduct.
10. a kind of Distributed Feedback Laser, it is characterised in that each Rotating fields include successively from down to up：
Substrate (1-0), it is N-type layer of InP；
Cushion (1-1), it is N-type layer of InP and is formed on substrate (1-0)；
First gradual change limiting layer (1-2), it is N-type InAlxGa1-xAs layers and it is formed on cushion (1-1), x=0.5-0.1；
First wave conducting shell (1-3), it is N-type layer of InP and is formed on the first gradual change limiting layer (1-2)；
Second limiting layer (1-4), it is N-type InAl0.5Ga0.5As layers and it is formed on first wave conducting shell (1-3)；
First Quantum Well barrier layer (1-5), it is undoped Al0.3Ga0.7InAs layers and it is formed on the second limiting layer (1-4)；
Mqw active layer (1-6), it is undoped 10 couples of 6nm thickness compressive strain AlGaInAs well layer and is formed at the first Quantum Well
In barrier layer (1-5)；
Second Quantum Well barrier layer (1-7), it is undoped Al0.3Ga0.7InAs layers and it is formed on mqw active layer 1-6；
Second waveguide layer (1-8), it is p-type Al0.5Ga0.5As layers and it is formed in the second Quantum Well barrier layer (1-7)；
Etch stop layer (1-9) is grown, it is to be formed on second waveguide layer (1-8)；
Forming the double ditch platform structures of ridge, the double ditch platform structures of the ridge include the first backbone, ridge waveguide and the second backbone, and described the
The first raceway groove is formed between one backbone and ridge waveguide, the second raceway groove is formed between second backbone and ridge waveguide；It is also, described
The light extraction surface side of ridge waveguide is fabricated to taper ridge waveguide, wherein, the cone bottom of taper ridge waveguide and the width of rectangle ridge waveguide-coupled
Wr is 1.4-2.5um, and the width Wt of the vertex of a cone is fewer 0.3-0.5um than the width Wr at the cone bottom；Light-emitting surface tapered ridge waveguide length
Lt is 5-10um, and the first backbone, ridge waveguide and the second backbone include：
Grating layer (1-10), it is p-type Al0.5Ga0.5As layers and it is formed on etch stop layer (1-9)；
3rd gradual change limiting layer (1-11), it is p-type AlxGa1-xAs layers and it is formed at x=0.5-0.1 on grating layer (1-10)；
Ohmic contact layer (1-12), it is InGaAs layers of p-type and is formed on the 3rd gradual change limiting layer (1-11)；
Insulating medium layer (1-13), it is SiO2Layer is simultaneously formed on ohmic contact layer (1-12), and covers the first backbone, first
Raceway groove, the second backbone, the subregion of the second raceway groove and ridge waveguide；
P-type top electrode (1-14), it is TiPtAu layer and is formed on ohmic contact layer (1-12)；
N-type bottom electrode (1-15), it is Au-Sn layer and is formed at below substrate (1-0).
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