CN110957633A - Narrow ridge distributed feedback laser with mode field diffusion structure and application thereof - Google Patents

Narrow ridge distributed feedback laser with mode field diffusion structure and application thereof Download PDF

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CN110957633A
CN110957633A CN201911300059.1A CN201911300059A CN110957633A CN 110957633 A CN110957633 A CN 110957633A CN 201911300059 A CN201911300059 A CN 201911300059A CN 110957633 A CN110957633 A CN 110957633A
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layer
waveguide
ridge
distributed feedback
feedback laser
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夏施君
许博蕊
祝宁华
包帅
袁海庆
孙甲政
班德超
徐长达
孙文惠
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A narrow ridge distributed feedback laser with a mode field diffusion structure and application thereof are provided, wherein the distributed feedback laser comprises an N-face electrode layer; a substrate layer; a buffer layer; a first waveguide layer; a multiple quantum well active layer; a second waveguide layer; a grating layer; etching the self-stop layer; a cladding layer; an ohmic contact layer; and a P-side electrode layer; and etching the cladding layer and the ohmic contact layer to form a ridge waveguide, wherein the ridge waveguide comprises a straight waveguide and a mode field diffusion structure. The invention utilizes three schemes of shrinking the ridge width in the horizontal direction, breaking the ridge on the end surface and depositing a layer of low-refractive index material film on the end surface, can effectively increase the mode field area of the output laser, reduce the power density of the end surface of the laser, improve the damage threshold of the end surface of the laser, increase the maximum injection current, increase the bandwidth, improve the spurious-free dynamic range, improve the high-frequency response characteristic of the laser and improve the modulation rate.

Description

Narrow ridge distributed feedback laser with mode field diffusion structure and application thereof
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a narrow ridge distributed feedback laser with a mode field diffusion structure and application thereof.
Background
The high-speed semiconductor laser is a core device of a high-speed communication system. The high-performance transmitter uses a high-power low-noise DFB (distributed feedback) laser as a light source, and realizes the loading of data through direct modulation or external modulation. The direct modulation format realizes the change of light amplitude by changing the magnitude of the laser injection current, and the external modulation technology adopts an external optical modulator to modulate continuous light emitted by a semiconductor laser. The external modulator can achieve a wider modulation frequency range, but is large in size, high in cost, high in driving voltage and large in insertion loss by 6-7 dB. The directly modulated semiconductor laser has the advantages of simple process, small volume, low power consumption, high linearity, convenient use and the like, is suitable for short-distance transmission, and is a key emission source of a metropolitan area network and a local area network. It also has important application in high speed signal processing systems such as data centers, supercomputers, and the like. In order to increase the transmission rate and reduce the transmission cost per bit, the PAM4 technique is widely used. The PAM4 technique requires not only high bandwidth of the directly tuned laser, but also a larger dynamic range.
InP-based high-speed directly-tuned DFB lasers are the primary emission source for the 1.3 and 1.55 micron optical communication windows in optical communication systems. The quantum well structure of the laser mainly comprises two material systems of InGaAsP and AlGaInAs. The structure of a general high-speed semiconductor laser is a narrow ridge waveguide short cavity length, the power of the laser is low, and the end surface damage threshold is low. The output power of the direct-modulation DFB laser is increased along with the increase of the injection current, and when the injection current is too large, the end face is easy to generate optical damage, and the frequency response is poor.
Disclosure of Invention
It is therefore an objective of the claimed invention to provide a narrow ridge distributed feedback laser with mode field diffusion structure and its application, which are aimed at least partially solving at least one of the above-mentioned problems.
To achieve the above object, as one aspect of the present invention, there is provided a narrow ridge distributed feedback laser having a mode field diffusion structure, comprising:
the N-face electrode layer is used for forming ohmic contact;
a substrate layer disposed over the N-sided electrode layer;
the buffer layer is arranged above the substrate layer and plays a role in buffering;
a first waveguide layer disposed over the substrate layer for confining an optical field;
a multiple quantum well active layer disposed over the first waveguide layer for generating stimulated emission of light;
a second waveguide layer disposed over the multiple quantum well active layer for confining an optical field;
the grating layer is arranged on the second waveguide layer and used for mode selection;
the etching self-stopping layer is arranged on the grating layer and used for controlling the etching depth;
the cladding layer is arranged above the etching self-stopping layer and used for limiting the light field and the carrier diffusion;
an ohmic contact layer disposed on the cladding layer; and
a P-side electrode layer disposed on the ohmic contact layer for forming an ohmic contact;
and etching the cladding layer and the ohmic contact layer to form a ridge waveguide, wherein the ridge waveguide comprises a straight waveguide and a mode field diffusion structure.
As another aspect of the present invention, there is also provided a use of the distributed feedback laser as described above in the field of optical communications.
Based on the above technical solution, the narrow ridge distributed feedback laser with mode field diffusion structure and the application thereof of the present invention have at least one of the following advantages compared with the prior art:
the invention utilizes three schemes of shrinking the ridge width in the horizontal direction, breaking the ridge on the end surface and depositing a layer of low-refractive index material film on the end surface, can effectively increase the mode field area of the output laser, reduce the power density of the end surface of the laser, improve the damage threshold of the end surface of the laser, increase the maximum injection current, increase the bandwidth, improve the spurious-free dynamic range, improve the high-frequency response characteristic of the laser and improve the modulation rate.
Drawings
FIG. 1a is a schematic diagram of a three-dimensional structure of a narrow ridge DFB laser with a mode field diffusion structure of a narrowed ridge waveguide structure (without an N-plane electrode layer and a P-plane electrode layer) according to an embodiment of the present invention;
FIG. 1b is a schematic diagram of a three-dimensional structure of a narrow ridge DFB laser with a broken ridge structure as a mode field diffusion structure (without an N-plane electrode layer and a P-plane electrode layer) according to an embodiment of the present invention;
FIG. 1c is a schematic diagram of a three-dimensional structure of a narrow ridge DFB laser with a film structure as a mode field diffusion structure (without an N-plane electrode layer and a P-plane electrode layer) according to an embodiment of the present invention;
FIG. 2 is a front view schematic of the structure of FIG. 1 a;
FIG. 3 is a side view schematic of the structure of FIG. 1 a;
FIG. 4a is a schematic top view of a narrowed ridge waveguide structure of a narrow ridge DFB laser with a mode field diffusion structure according to an embodiment of the present invention;
FIG. 4b is a schematic top view of a narrow ridge DFB laser with a mode field diffusion structure in accordance with an embodiment of the present invention, wherein the mode field diffusion structure is a broken ridge structure;
fig. 4c is a schematic top view of a thin film structure of a narrow ridge DFB laser with a mode field diffusion structure according to an embodiment of the present invention.
Description of reference numerals:
1-InP substrate; 2-a buffer layer; 3-a lower waveguide layer; 4-multiple quantum well active layer; 5-an upper waveguide layer; 6-a grating layer; 7-etching the self-stop layer; 8-cladding; 9-ohmic contact layer; 10-ridge waveguide; 11-a channel; 12-a membrane structure; 13-P-side pad electrode.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention discloses a distributed feedback laser, comprising:
the N-face electrode layer is used for forming ohmic contact;
a substrate layer disposed over the N-sided electrode layer;
the buffer layer is arranged above the substrate layer and plays a role in buffering;
a first waveguide layer disposed over the substrate layer for confining an optical field;
a multiple quantum well active layer disposed over the first waveguide layer for generating stimulated emission of light;
a second waveguide layer disposed over the multiple quantum well active layer for confining an optical field;
the grating layer is arranged on the second waveguide layer and used for mode selection;
the etching self-stopping layer is arranged on the grating layer and used for controlling the etching depth;
the cladding layer is arranged above the etching self-stopping layer and used for limiting the light field and the carrier diffusion;
an ohmic contact layer disposed on the cladding layer; and
a P-side electrode layer disposed on the ohmic contact layer for forming an ohmic contact;
and etching the cladding layer and the ohmic contact layer to form a ridge waveguide, wherein the ridge waveguide comprises a straight waveguide and a mode field diffusion structure.
In some embodiments of the invention, the mode field spreading structure is a tapered ridge waveguide structure, the tapered ridge waveguide structure being connected to a straight waveguide.
In some embodiments of the invention, the tapered ridge waveguide structure is flared;
in some embodiments of the invention, the converging angle of the converging ridge waveguide structure is 0.4 to 5 degrees;
in some embodiments of the invention, the length of the tapered ridge waveguide structure is from 20 microns to 80 microns;
in some embodiments of the present invention, the converging ridge waveguide structure is disposed at an end of the ridge waveguide near the light exit surface or the backlight surface.
In some embodiments of the present invention, the mode field spreading structure is a broken ridge structure, and the distance between the broken ridge structure and the light emitting surface or the backlight surface end surface is 5 micrometers to 40 micrometers.
In some embodiments of the present invention, the mode field diffusion structure is a film structure deposited on the end surface of the straight waveguide light-emitting surface or backlight surface.
In some embodiments of the invention, the film structure has a refractive index between 1 and 3;
in some embodiments of the invention, the material of the membrane structure comprises SiO2、Al2O3、MgF2Etc.;
in some embodiments of the invention, the membrane structure has a thickness of 0.5 to 3 microns.
In some embodiments of the present invention, the bottom of the ridge waveguide is disposed above the etching self-stop layer, and the P-side electrode layer covers the top of the ridge waveguide layer and is led out from a circular pad;
in some embodiments of the invention, the ridge waveguide has a width of 1 to 3 microns and a depth of 1.5 to 2.5 microns;
in some embodiments of the present invention, the ridge waveguide is formed by etching two channels on the cladding layer and the ohmic contact layer, and the width of the channel is 8 micrometers to 15 micrometers.
In some embodiments of the present invention, a back light surface of the distributed feedback laser is plated with a high reflection film, and a light emitting surface of the distributed feedback laser is plated with an antireflection film.
In some embodiments of the present invention, the material used for the substrate layer comprises InP;
in some embodiments of the present invention, the buffer layer is made of a material including silicon-doped InP;
in some embodiments of the present invention, the buffer layer has a thickness of 400 nm to 500 nm;
in some embodiments of the present invention, the material used for the first waveguide layer includes InGaAsP;
in some embodiments of the present invention, the material used for the second waveguide layer includes InGaAsP;
in some embodiments of the present invention, the multiple quantum well active layer adopts an InGaAsP multiple quantum well structure;
in some embodiments of the present invention, the grating layer is obtained by a holographic exposure method;
in some embodiments of the present invention, the P-side electrode is made of titanium platinum gold, and the N-side electrode is made of gold germanium nickel.
The invention also discloses application of the distributed feedback laser in the field of optical communication.
In one exemplary embodiment, the semiconductor laser of the present invention is a narrow ridge DFB laser having a mode field diffusion structure, and is a narrow ridge DFB laser having a mode field diffusion structure that improves an end surface damage threshold and improves output power.
The narrow ridge DFB laser structure is in order from bottom to top: the semiconductor device comprises an N-surface electrode layer, an InP substrate, a buffer layer, a lower waveguide layer (namely a first waveguide layer), a multi-quantum well active layer, an upper waveguide layer (namely a second waveguide layer), a grating layer, an etching self-stop layer, a cladding layer, an ohmic contact layer and a P-surface electrode layer. The laser optical waveguide structure includes a lower waveguide layer, a multiple quantum well active layer, and an upper waveguide layer. The grating layer is arranged on the middle upper part of the upper waveguide layer. Wherein the cladding layer and the ohmic contact layer constitute a ridge structure. The ridge structure comprises a straight waveguide part and a mode field diffusion structure, wherein the mode field diffusion part comprises the following three conditions: a, shrinking the ridge width in the horizontal direction, namely shrinking the ridge waveguide structure; b, breaking the end surface ridge, namely breaking the ridge structure; and c, depositing a low-refractive-index film structure on the end face, namely a film structure.
The ridge waveguide is shrunk on the light-emitting surface of the laser, namely the ridge waveguide of the laser is gradually shrunk in the direction of the light-emitting surface to form a closed-horn-shaped shape. The ridge width gradually shrinks at a position close to the light-emitting surface in the horizontal direction, the shrinkage angle theta is 0.4-5 degrees, the ridge waveguide is in a closed horn mouth structure at the light-emitting surface, and the length of the closed horn mouth structure is 20-80 microns.
The ridge breaking structure on the light emitting surface means that the ridge waveguide is broken at a position 5-40 microns close to the light emitting surface in the vertical direction, and the straight waveguide part is directly contacted with air.
Wherein, depositing a film structure at the light-emitting end face refers to depositing a low-refractive index material film with refractive index of 1-3, which can be SiO2(refractive index n is 1.44) and Al2O3(refractive index n: 1.75) and MgF2(refractive index n is 1.38), and the like, and the film of the low refractive index material is the mode field diffusion portion. The film is deposited at the end face of the waveguide portion to a thickness of 0.5 to 3 microns.
Wherein, the mode field diffusion part is also applicable to the backlight surface.
Wherein, the grating region is arranged at the middle upper part of the upper waveguide layer, and the multiple quantum well active region is an InP material system.
The backlight surface of the laser is plated with a high-reflection film, and the light-emitting surface of the laser is plated with an antireflection film.
Wherein, P-surface electrodes and N-surface electrodes are respectively sputtered on the ohmic contact layer and below the InP substrate layer. And the P-side electrode is led out through a circular pad.
The technical solution of the present invention is further illustrated by the following specific embodiments in conjunction with the accompanying drawings. It should be noted that the following specific examples are given by way of illustration only and the scope of the present invention is not limited thereto.
The narrow ridge DFB laser with the mode field diffusion structure comprises a stack of an N-surface electrode layer, an InP substrate 1, a buffer layer 2, a lower waveguide layer 3, a multi-quantum well active layer 4, an upper waveguide layer 5, a grating layer 6, an etching self-stop layer 7, a cladding layer 8, an ohmic contact layer 9 and a P-surface electrode layer from bottom to top in sequence. Wherein the cladding layer 8 and the ohmic contact layer 9 constitute a ridge waveguide 11.
As shown in fig. 1a to 1c, the cladding layer 8 and the ohmic contact layer 9 constitute a straight waveguide portion and a mode field diffusion portion, and are divided into a backlight surface and a light exit surface, and the arrow indicates the laser light exit direction. Fig. 2 is a front view schematic diagram of fig. 1a, and fig. 3 is a side view schematic diagram of fig. 1 a.
Fig. 4 a-4 c show top views of the narrow ridge DFB laser with mode field diffusion structure, where fig. 4a is a ridge waveguide horizontal constriction (i.e., a constricted ridge waveguide), fig. 4b is a ridge waveguide break-up structure, and fig. 4c is a deposited low index material thin film structure (i.e., a film structure). The ridge waveguide comprises a straight waveguide part and a mode field diffusion part, wherein one end of the left side is a light-emitting end face of the ridge waveguide, the right side is a backlight end face, and the mode field diffusion part is positioned on one side of the light-emitting face. As shown in fig. 4a, the narrow ridge structure of the light-emitting surface is in a shape that the width of the ridge waveguide gradually shrinks toward the light-emitting surface, and the horizontal divergence angle θ of the ridge waveguide flaring structure is 0.4 to 5 degrees. As shown in fig. 4b, the ridge waveguide cut-off structure is to cut off the ridge waveguide at a position 5 to 40 microns close to the light exit surface, and the straight waveguide portion is directly contacted with air. As shown in fig. 4c, the depositing of the low refractive index material film structure is to deposit a low refractive index material film structure on the end face of the straight waveguide portion.
In this embodiment, the narrow ridge DFB laser has a cavity length L of 150 to 250 microns and a width W of 250 microns, and the exit mode field spreading section L1 includes a shrinkage of the horizontal ridge width, b-facet ridge break-off and c-facet deposition of a thin film of low refractive index material, wherein the shrinkage length of the horizontal ridge width is 20 to 80 microns and the break-off length of the b-facet ridge is 5 to 40 microns, and the thickness of the thin film of c-low refractive index material is 0.5 to 3 microns. The structure increases the area of a mode field, reduces the optical power density on the light-emitting surface, and improves the damage threshold of the end face of the laser.
In this embodiment, the InP substrate layer 1 is made of an InP substrate material, and the buffer layer 2 is made of an InP material doped with Si and having a thickness of 450 nm. The upper waveguide layer 3 and the lower waveguide layer 4 are made of InGaAsP material. The multiple quantum well active layer 4 adopts an InGaAsP multiple quantum well structure, has 5 quantum wells, and has a lasing wavelength of 1310 nm. Compared with the common double heterostructure laser, the quantum well laser has the advantages of low threshold, large output power and high modulation rate. Tensile or compressive strain is introduced in the quantum well structure to increase differential gain, and the layer thicknesses of the well and barrier are optimized to reduce carrier transit time through the optical confinement layer and carrier escape from the active region.
The grating layer 6 is manufactured on the middle upper part of the upper waveguide layer 5, and the grating is obtained by adopting a holographic exposure method. And a high reflection film is plated on the backlight surface of the laser, and an antireflection film is plated on the light emitting surface.
After obtaining the grating by the holographic method, the etched self-stop layer 7, the cladding layer 8 and the ohmic contact layer 9 are obtained by secondary epitaxy. The ridge waveguide 10 is obtained by photoetching and etching, the width of the ridge waveguide 10 is 2 microns, the depth of the ridge waveguide 10 is 1.8 microns, and the width of a channel 11 on two sides of the ridge waveguide 10 is 12 microns. The ridge waveguide 10 functions to achieve a light confinement effect and obtain a single-mode output.
And finally, obtaining a P-surface electrode on the ohmic contact layer 9 by adopting a magnetron sputtering method, and obtaining an N-surface electrode below the InP substrate layer 1. The P-face electrode is made of TiPtAu (titanium platinum gold), and the N-face electrode is made of AuGeNi (gold germanium nickel). The P-side electrode is led out through a circular bonding pad.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. In addition, the above definitions of the various elements are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art may easily modify or replace them, for example:
1. directional phrases used in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., refer only to the orientation of the drawings and are not intended to limit the scope of the present disclosure;
2. the embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e. technical features in different embodiments may be freely combined to form further embodiments.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A distributed feedback laser, comprising:
the N-face electrode layer is used for forming ohmic contact;
a substrate layer disposed over the N-sided electrode layer;
the buffer layer is arranged above the substrate layer and plays a role in buffering;
a first waveguide layer disposed over the substrate layer for confining an optical field;
a multiple quantum well active layer disposed over the first waveguide layer for generating stimulated emission of light;
a second waveguide layer disposed over the multiple quantum well active layer for confining an optical field;
the grating layer is arranged on the second waveguide layer and used for mode selection;
the etching self-stopping layer is arranged on the grating layer and used for controlling the etching depth;
the cladding layer is arranged above the etching self-stopping layer and used for limiting the light field and the carrier diffusion;
an ohmic contact layer disposed on the cladding layer; and
a P-side electrode layer disposed on the ohmic contact layer for forming an ohmic contact;
and etching the cladding layer and the ohmic contact layer to form a ridge waveguide, wherein the ridge waveguide comprises a straight waveguide and a mode field diffusion structure.
2. The distributed feedback laser of claim 1,
the mode field diffusion structure comprises a contracted ridge waveguide structure, and the contracted ridge waveguide structure is connected with the straight waveguide.
3. The distributed feedback laser of claim 2,
the contraction ridge waveguide structure is in a closed horn mouth shape;
the contraction angle of the contraction ridge waveguide structure is 0.4-5 degrees;
the length of the tapered ridge waveguide structure is 20 to 80 microns;
the contraction ridge waveguide structure is arranged at one end of the ridge waveguide close to the light emitting surface or the backlight surface.
4. The distributed feedback laser of claim 1,
the mode field diffusion structure is a broken ridge structure, and the distance between the broken ridge structure and the light emitting surface or the end face of the backlight surface is 5-40 micrometers.
5. The distributed feedback laser of claim 1,
the mode field diffusion structure is a film structure, and the film structure is deposited on the end face of the light-emitting surface or the backlight surface of the straight waveguide.
6. The distributed feedback laser of claim 5,
the refractive index of the film structure is between 1 and 3;
the material of the film structure comprises SiO2、Al2O3、MgF2；
The film structure has a thickness of 0.5 to 3 microns.
7. The distributed feedback laser of claim 1,
the bottom of the ridge waveguide is arranged on the etching self-stopping layer, and the P-surface electrode layer covers the top of the ridge waveguide layer and is led out from a circular bonding pad;
the ridge waveguide has a width of 1 to 3 microns and a depth of 1.5 to 2.5 microns;
the ridge waveguide is formed by etching two channels on the cladding layer and the ohmic contact layer, and the width of each channel is 8-15 microns.
8. The distributed feedback laser of claim 1,
the backlight surface of the distributed feedback laser is plated with a high reflection film, and the light emitting surface of the distributed feedback laser is plated with an antireflection film.
9. The distributed feedback laser of claim 1,
the substrate layer is made of InP;
the buffer layer is made of silicon-doped InP;
the thickness of the buffer layer is 400 to 500 nanometers;
the first waveguide layer is made of InGaAsP;
the second waveguide layer is made of InGaAsP;
the multi-quantum well active layer adopts an InGaAsP multi-quantum well structure;
the grating layer is obtained by adopting a holographic exposure method;
the P-face electrode is made of titanium platinum gold, and the N-face electrode is made of gold germanium nickel.
10. Use of a distributed feedback laser according to any of claims 1 to 9 in the field of optical communications.
CN201911300059.1A 2019-12-16 2019-12-16 Narrow ridge distributed feedback laser with mode field diffusion structure and application thereof Pending CN110957633A (en)

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CN113922210A (en) * 2021-09-13 2022-01-11 厦门三安光电有限公司 Laser diode and packaging structure thereof
CN114498299A (en) * 2022-01-21 2022-05-13 度亘激光技术（苏州）有限公司 Semiconductor device and preparation method thereof
CN114512897A (en) * 2020-11-17 2022-05-17 山东华光光电子股份有限公司 Wide-strip-shaped high-power semiconductor laser for inhibiting lateral lasing through lateral absorption region and preparation method thereof

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US20170110851A1 (en) * 2015-10-20 2017-04-20 Stanley Electric Co., Ltd. Semiconductor light emitting element
CN107069426A (en) * 2017-06-30 2017-08-18 苏州全磊光电有限公司 A kind of Distributed Feedback Laser epitaxial wafer and its manufacture method
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CN112260060A (en) * 2020-12-22 2021-01-22 武汉敏芯半导体股份有限公司 Distributed feedback laser
CN113922210A (en) * 2021-09-13 2022-01-11 厦门三安光电有限公司 Laser diode and packaging structure thereof
CN113922210B (en) * 2021-09-13 2024-01-05 厦门三安光电有限公司 Laser diode and packaging structure thereof
CN114498299A (en) * 2022-01-21 2022-05-13 度亘激光技术（苏州）有限公司 Semiconductor device and preparation method thereof
CN114498299B (en) * 2022-01-21 2023-01-31 度亘激光技术（苏州）有限公司 Semiconductor device and preparation method thereof

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