CN220456888U - Few-mode vertical optical cavity surface emitting laser with relief curved surface - Google Patents
Few-mode vertical optical cavity surface emitting laser with relief curved surface Download PDFInfo
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- CN220456888U CN220456888U CN202321122430.1U CN202321122430U CN220456888U CN 220456888 U CN220456888 U CN 220456888U CN 202321122430 U CN202321122430 U CN 202321122430U CN 220456888 U CN220456888 U CN 220456888U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 23
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- 239000010410 layer Substances 0.000 claims description 69
- 239000002344 surface layer Substances 0.000 claims description 21
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
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- 230000005764 inhibitory process Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
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Abstract
The utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which relates to the technical field of semiconductor lasers, and comprises a VCSEL chip and a relief curved surface structure, wherein the structure sequentially comprises the following components in the epitaxial growth sequence direction: an n-electrode, an n-type substrate, a bottom DBR Bragg reflector, an optically active layer, an oxide window layer, a top DBR Bragg reflector, and a relief curved layer. The preparation of the relief curved surface is prepared by means of epitaxial growth, dry etching or chemical etching of a wafer; the morphology equation of the relief curved surface is obtained through optimization calculation, and the functions of reflection inhibition, modal control and the like can be realized on the emergent light of the top Bragg reflector, so that the accurate design of an emergent mode and a far-field divergence angle is obtained, the transverse modulus of the emergent light of the vertical cavity surface emitting laser chip is reduced, and the far-field divergence angle is inhibited.
Description
Technical Field
The utility model relates to the technical field of semiconductor lasers, in particular to a few-mode vertical optical cavity surface emitting laser with a relief curved surface.
Background
A vertical optical cavity surface emitting laser, which is called Vertical Cavity Surface Emitting Laser by english, abbreviated as VCSEL, is a semiconductor laser. The structure is characterized in that the optical mirror surface and the wafer surface are distributed in parallel, and coherent light amplified by the mirror surface reflection and the active layer is emitted perpendicular to the wafer surface. The preparation process is compatible with the existing semiconductor 'bottom-up' substitution technology, and has the advantages of small volume, round light spots, array arrangement, mass production, lower cost and the like. VCSEL light sources are widely used in applications such as short range data transmission, three-dimensional sensing, vehicle radar (LiDAR), unmanned, intelligent vision, and the like.
VCSEL lasers commonly use an oxide window layer to limit current injection and photon generation, the size of the oxide window actually controlling the number of transverse modes of the active region electric field. In applications such as data communications, small-mode (few-mode) and even single-mode (single-mode) VCSEL light source modules become a necessary choice in order to reduce the transmission distance limit caused by light source dispersion, so the diameter of the oxidized aperture in these applications is generally smaller than 10um. However, the smaller oxide window aperture limits the output power. Therefore, the generation of the transverse modulus is effectively controlled on the premise of not reducing the oxidation aperture and the output power, and the problem to be solved by the communication VCSEL light source is urgent.
Disclosure of Invention
Aiming at the technical problem that the power requirement of a VCSEL light source and the transverse modulus of communication application are contradictory, the utility model provides a few-mode vertical optical cavity surface emitting laser with a relief curved surface, which can effectively inhibit the number of transverse modes on the premise of not losing emergent power and reduce the far-field divergence angle of the VCSEL.
In order to achieve the technical aim, the technical scheme of the utility model is as follows:
a few-mode vertical cavity surface emitting laser with a relief curved surface comprises an n-type electrode layer, a substrate, a bottom Bragg reflector, an optical active layer, an oxidation window layer, a top Bragg reflector, a relief curved surface layer and a p-type electrode layer which are sequentially connected.
Optionally, the optical dielectric constant of the relief curved layer is greater than the dielectric constant of the top Bragg reflector.
Optionally, the said BraunThe grid reflector is formed by multiple layers of alternating AlGaAs Al x Ga 1-x An As layer and a potassium arsenic GaAs material layer, wherein x is the molar component of Al element in the compound.
Optionally, the aluminum gallium arsenic Al x Ga 1-x The optical path equivalent thickness of the As layer and the potassium arsenic GaAs material layer is one quarter of the luminescence wavelength.
Optionally, the number of layers of the bottom bragg mirror is greater than the number of layers of the top bragg mirror.
Optionally, the material of the substrate is gallium arsenide.
Optionally, the shape of the relief curved surface layer is a three-dimensional curved surface.
Optionally, the three-dimensional curved surface morphology equation of the relief curved surface layer is: z=f (x, y), where x, y, z are the position coordinates of the points on the curved surface, the coordinate system is a cartesian coordinate system, and the origin of coordinates of the position coordinates (x, y, z) is located at the center of the oxidized aperture cylinder in the oxidized window layer, and the z axis is along the optical axis of the outgoing light.
Optionally, the relief curved surface layer comprises a central blank area, a curved surface relief area and a peripheral anti-phase area which are sequentially connected from the center to the periphery.
Optionally, the composition material of the relief curved surface layer is gallium arsenide.
The present utility model provides structures and fabrication schemes for integrating curved microlenses on VCSELs from the wafer level. Compared with other schemes, the surface relief structure has the advantages of simple structure, compatible preparation flow and the like. The application of the scheme can improve the far-field divergence angle of the emergent light of the VCSEL, so that the light beam obtains higher far-field power density.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional structure of a VCSEL laser with a surface relief curved surface according to an embodiment of the present application.
Fig. 2 is a top view of a VCSEL laser with a surface relief curved surface according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a relief curved surface and an adjacent layer structure of a VCSEL laser with a surface relief curved surface according to an embodiment of the present application.
Fig. 4 is a graph of power versus current for a VCSEL laser with a surface relief curved surface, as compared to a conventional VCSEL, according to an embodiment of the present application.
Fig. 5 shows the distribution of normalized far field intensity along an angle in cross section of a VCSEL laser with a surface relief curved surface according to an embodiment of the present application, in contrast to the angular distribution of far field intensity of a conventional VCSEL.
Reference numerals: 1. an n-type electrode layer; 2. a substrate; 3. a bottom Bragg reflector; 4. an optically active layer; 5. oxidizing the window layer; 6. a top Bragg reflector; 7. a relief curved surface layer; 8. a p-type electrode layer.
Detailed Description
In order to make the novel purpose, technical scheme and beneficial effect of the present embodiment more obvious, the present embodiment is described in detail below with reference to specific embodiments and drawings. The present application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant embodiments and are not limiting of the embodiments. It should be further noted that, for convenience of description, only a portion related to implementation of the novel form is shown in the drawings. The technical schemes in the same embodiment and the technical schemes in different embodiments can be arranged and combined to form a new technical scheme without contradiction or conflict, which are all within the scope of the novel protection of the implementation.
A few-mode vertical cavity surface emitting laser with a relief curved surface comprises an n-type electrode layer 1, a substrate 2, a bottom Bragg reflector 3, an optical active layer 4, an oxidation window layer 5, a top Bragg reflector 6, a relief curved surface layer 7 and a p-type electrode layer 8 which are sequentially connected. As shown in fig. 1, the optically active layer 4, the oxidized window layer 5, the top bragg mirror 6, the relief curved surface layer 7 and the p-type electrode layer 8 constitute a light exit aperture mesa (mesa). Wherein the top bragg mirror 6 is p-type and the bottom bragg mirror 3 is n-type. The relief curved surface layer 7 is prepared by epitaxial growth, dry etching or chemical etching and the like, and becomes a part of the VCSEL optical cavity surface.
The optical dielectric constant of the relief curved layer 7 is greater than the dielectric constant of the top bragg mirror 6. The Bragg reflector is formed by multiple layers of alternating AlGaAs Al x Ga 1-x An As layer and a potassium arsenic GaAs material layer, wherein x is the molar component of Al element in the compound. AlGaAs Al x Ga 1-x The optical path equivalent thickness of the As layer and the potassium-arsenic GaAs material layer is one quarter of the light-emitting wavelength, namely the quarter-wave DBR.
To meet the top exit requirement, the number of layers of the bottom bragg mirror 3 is larger than the number of layers of the top bragg mirror 6. The material of the substrate is gallium arsenide. In order to form a reflected light wave with opposite phase, the refractive index of the relief curved layer 7 should be larger than that of the adjacent layer at the bottom, so that the constituent material is gallium arsenide.
The shape of the relief curved surface layer 7 is a three-dimensional curved surface, as shown in fig. 3, the three-dimensional curved surface shape equation z=f (x, y) of the relief curved surface layer 7 is obtained through optimization calculation, wherein x, y, z is the position coordinates of points on the curved surface, the coordinate system is a cartesian coordinate system, the origin of coordinates of the position coordinates (x, y, z) is located at the center of the oxidized aperture cylinder in the oxidized window layer 5, and the z axis is along the optical axis of the emergent light.
Optically, the relief curved layer 7 may be considered as part of the top Bragg reflector 6, the relief curved layer 7 comprising, from center to periphery, a center blank region, a curved relief region, and a peripheral antiphase region, connected in sequence:
(1) A central blank region, in which the relief layer material is completely etched, which does not have any effect on the light waves transmitted in the top bragg mirror 6; (2) The surface relief area, the relief layer of this area is etched partially, the surface topography is the curved surface calculated through topography equation z=f (x, y) optimization. Because the distribution positions of the light waves of different modes in the cross section are different, after the light waves penetrate through the interface of the top Bragg reflector 6, different phase feedback can be formed in the area due to the thickness of the relief layer which is changed, so that the reflection loss of different modes can be controlled, and the purpose of controlling the transverse mode of the laser is achieved; (3) And the peripheral anti-phase region, the relief layer of the region is not etched, and an opposite reflection phase is generated for the light wave transmitted in the top Bragg reflector 6, so that the reflection loss of the whole optical cavity of the region is improved. The optimization shaping of the curved surface morphology equation of the relief curved surface layer 7 is to calculate the mode suppression ratio by calculating the field distribution and the quality factor of each resonance mode by using a time domain finite difference method, so as to design the required few-mode lasing.
The relief curved surface layer 7 of this embodiment is prepared by the following steps: the relief curved surface layer 7 is first formed by epitaxial growth or vapor deposition, followed by dry etching or chemical etching to form the desired curved surface topography. Wherein a schematic top view and a schematic side view of the relief curved layer 7 can be shown in fig. 2 and 3, respectively.
Examples
The embodiment provides a few-mode vertical cavity surface emitting laser with a relief curved surface, which comprises an n-type electrode layer 1, a substrate 2, a bottom Bragg reflector 3, an optical active layer 4, an oxidation window layer 5, a top Bragg reflector 6, a relief curved surface 7 and a p-type electrode layer 8, wherein the n-type electrode layer is positioned on the back surface of the substrate. The optically active layer 4, the oxidized window layer 5, the top bragg mirror 6, the relief curved surface 7, and the p-type electrode layer 8 constitute a light exit aperture mesa (mesa). The bottom Bragg reflector 3 and the top Bragg reflector 6 each comprise a plurality of layers of Bragg reflection pairs with unequal numbers, each Bragg reflection pair is composed of one layer of gallium arsenide and one layer of aluminum gallium arsenide material, and the equivalent optical thickness of each layer of the Bragg reflection pair is one quarter wavelength. The object of this embodiment is to effectively suppress the number of transverse modes without losing the exit power, and thus reduce the far field divergence angle of the VCSEL.
The VCSEL laser with the surface relief curved layer of this embodiment is designed to operate at a wavelength of 850nm. The bottom bragg reflector 3 can adopt 34.5 pairs of n-type DBR bragg reflectors, the top bragg reflector 6 can adopt 20 pairs of p-type DBR bragg reflectors, and the aperture of the oxidation window is designed to be 6um, namely the size of the middle blank part of the oxidation window layer 5. The relief curved layer 7 has a thickness of 57.52nm. For comparative verification, a normal VCSEL with exactly the same parameters but without the embossed curved surface layer 7 was designed at the same time. By using a full vector optoelectronic simulation tool, the power-current curves obtained by simulating the VCSEL under different current injection conditions are shown in FIG. 4, and compared with a common VCSEL, the optimized relief VCSEL has the advantage of overall luminous power. The angle distribution of the far field intensity of the emergent electric field obtained by the simulation after normalization is shown in fig. 5, and the full width at half maximum (Full width at half maximum, abbreviated as FWHM) angle of the relief VCSEL is about 2.67 degrees, so that the angle distribution is obviously advantageous compared with 9.54 degrees of a common VCSEL.
Claims (9)
1. The few-mode vertical cavity surface emitting laser with the relief curved surface is characterized by comprising an n-type electrode layer, a substrate, a bottom Bragg reflector, an optical active layer, an oxidation window layer, a top Bragg reflector, a relief curved surface layer and a p-type electrode layer which are sequentially connected, wherein the appearance of the relief curved surface layer is a three-dimensional curved surface.
2. A few-mode vertical cavity surface emitting laser with a relief curved surface according to claim 1, wherein the optical permittivity of said relief curved surface layer is greater than the permittivity of the top bragg mirror.
3. A few-mode vertical cavity surface emitting laser with relief curved surface as defined in claim 1, wherein said bragg reflector is formed of multiple layers of alternating aluminum gallium arsenic Al x Ga -x1 An As layer and a potassium arsenic GaAs material layer, whereinxIs the molar component of Al element in the compound.
4. Root of Chinese characterA few-mode vertical cavity surface emitting laser with relief curved surface as defined in claim 3, wherein said aluminum gallium arsenide Al x Ga -x1 The optical path equivalent thickness of the As layer and the potassium arsenic GaAs material layer is one quarter of the luminescence wavelength.
5. A few-mode vertical cavity surface emitting laser with relief curved surface according to claim 1, wherein the number of layers of said bottom bragg mirror is greater than the number of layers of said top bragg mirror.
6. A few-mode vertical cavity surface emitting laser with relief curved surface as defined in claim 1, wherein said substrate material is gallium arsenide.
7. The few-mode vertical cavity surface emitting laser with relief curved surface of claim 1, wherein the three-dimensional curved surface topography equation of the relief curved surface layer is:wherein, the method comprises the steps of, wherein,x，y，zthe coordinate system of the three-dimensional surface morphology equation is a Cartesian coordinate system, and the position coordinate isx, y, z) The origin of coordinates of (c) is located at the center of the oxidized aperture cylinder in the oxidized window layer, and the z-axis is along the optical axis of the outgoing light.
8. A few-mode vertical cavity surface emitting laser with a relief surface according to claim 1, wherein said relief surface layer comprises a central blank region, a curved relief region and a peripheral antiphase region connected in sequence from center to periphery.
9. A few-mode vertical cavity surface emitting laser with relief curved surface according to any of claims 1-8, wherein said relief curved surface layer comprises gallium arsenide.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117913659A (en) * | 2024-03-18 | 2024-04-19 | 江西德瑞光电技术有限责任公司 | VCSEL chip, preparation method thereof and VCSEL laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117913659A (en) * | 2024-03-18 | 2024-04-19 | 江西德瑞光电技术有限责任公司 | VCSEL chip, preparation method thereof and VCSEL laser |
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