CN111224319A - Vertical cavity surface emitting laser with hollow light emitting region, and manufacturing method and application thereof - Google Patents
Vertical cavity surface emitting laser with hollow light emitting region, and manufacturing method and application thereof Download PDFInfo
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- CN111224319A CN111224319A CN202010063742.4A CN202010063742A CN111224319A CN 111224319 A CN111224319 A CN 111224319A CN 202010063742 A CN202010063742 A CN 202010063742A CN 111224319 A CN111224319 A CN 111224319A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
Abstract
The invention provides a vertical cavity surface emitting laser with a hollow light emitting area, a manufacturing method and application thereof, wherein the vertical cavity surface emitting laser with the hollow light emitting area comprises the following components: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; a second reflective layer disposed on the active layer; and the at least one annular light emitting area is formed on the second reflecting layer or/and the first reflecting layer and is used for emitting light. The vertical cavity surface emitting laser with the hollow light emitting region can improve the light emitting uniformity.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser with a hollow light emitting region, and a manufacturing method and application thereof.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) are developed on the basis of gallium arsenide semiconductor materials, are different from other light sources such as LEDs (light Emitting diodes) and LDs (Laser diodes), have the advantages of small volume, circular output light spots, single longitudinal mode output, small threshold current, low price, easy integration into large-area arrays and the like, and are widely applied to the fields of optical communication, optical interconnection, optical storage and the like.
Vertical Cavity Surface Emitting Lasers (VCSELs) are a new type of laser that emits light vertically from the surface, and a different structure from conventional edge emitting lasers brings many advantages: the coupling efficiency of the optical fiber and the optical fiber is greatly improved by the small divergence angle and the circularly symmetric far-field and near-field distribution without a complicated and expensive beam shaping system, and the coupling efficiency of the optical fiber and the multimode optical fiber is proved to be more than 90 percent; the optical cavity is extremely short in length, so that the longitudinal mode spacing is enlarged, single longitudinal mode operation can be realized in a wider temperature range, and the dynamic modulation frequency is high; the on-chip test can be carried out, and the development cost is greatly reduced; the light-emitting direction is vertical to the substrate, the integration of a high-density two-dimensional area array can be easily realized, the higher power output is realized, and a plurality of lasers can be arranged in parallel in the direction vertical to the substrate, so the laser array is very suitable for being applied to the fields of parallel optical transmission, parallel optical interconnection and the like, the laser array is successfully applied to single-channel and parallel optical interconnection at unprecedented speed, and a great amount of application is obtained in broadband Ethernet and high-speed data communication network with high cost performance; most attractive is that its manufacturing process is compatible with Light Emitting Diodes (LEDs), which are inexpensive to manufacture on a large scale.
The Vertical Cavity Surface Emitting Laser (VCSEL) chip with the large-area light emitting region has the advantages of high energy density, large effective light emitting filling proportion and the like, and is beneficial to miniaturization of an integrated module. However, the conventional solid light emitting hole VCSEL is limited by the diffusion length of the p-terminal electrode current, and is difficult to be made into a large-area light emitting region. If the solid light-emitting hole VCSEL is made into a large-area light-emitting region, the traditional solid light-emitting hole VCSEL has the phenomenon of uneven current injection, such as current crowding effect (current crowding effect), namely, current is mainly injected in a region close to a p-end metal at the edge of the hole, and a region close to the inside of the hole has little current density, so that the problems of uneven light emission, low light-emitting efficiency and the like are caused.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a vertical cavity surface emitting laser, a method for manufacturing the same, and a light emitting device using the same, so as to improve the uniformity of light emission and improve the light emitting efficiency.
To achieve the above and other objects, the present invention provides a vertical cavity surface emitting laser including:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer;
a second reflective layer disposed on the active layer;
at least two current confinement regions formed in sidewalls and intermediate regions of the second reflective layer or/and the first reflective layer;
at least one annular light emitting area formed on the second reflecting layer or/and the first reflecting layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
Further, the current limiting device also comprises at least two grooves, and parts of the current limiting regions are in contact with the side walls of the two grooves.
Further, at least one of the trenches has an annular structure, and at least one of the current confinement regions has an annular structure.
Further, the width of the at least one light-emitting area is adjusted by adjusting the width of the current limiting area.
Further, the inner diameter of the at least one annular light emitting area is 2-50 microns, and the outer diameter is 5-500 microns.
Further, the at least one annular light emitting area is a closed area.
Furthermore, the LED lamp also comprises a shielding layer, wherein the shielding layer is positioned between the current limiting areas, and the at least one annular light emitting area is formed by the shielding layer and the current limiting areas.
Further, the vertical cavity surface emitting laser includes a front surface vertical cavity surface emitting laser or a back surface vertical cavity surface emitting laser.
The invention also provides a manufacturing method of the vertical cavity surface emitting laser, which comprises the following steps:
providing a substrate;
forming a first reflective layer on the substrate;
forming an active layer on the first reflective layer;
forming a second reflective layer on the active layer;
forming at least two current confinement regions in sidewalls and a middle region of the second reflective layer or/and the first reflective layer;
forming at least one annular light emitting region on the second reflective layer or/and the first reflective layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
The present invention also proposes a light emitting device comprising:
a substrate;
a light emitting unit disposed on the substrate, the light emitting unit including at least one vertical cavity surface emitting laser;
wherein the vertical cavity surface emitting laser includes:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer;
a second reflective layer disposed on the active layer;
at least two current confinement regions formed in sidewalls and intermediate regions of the second reflective layer or/and the first reflective layer;
at least one annular light emitting area formed on the second reflecting layer or/and the first reflecting layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
In summary, the present invention provides a vertical cavity surface emitting laser, a method for manufacturing the same, and a light emitting device using the same, in which at least one annular light emitting region is formed in the vertical cavity surface emitting laser, so that current is more uniformly distributed in the annular light emitting region, thereby improving light emitting efficiency, improving light emitting uniformity, and realizing a large-angle divergence angle.
Drawings
FIG. 1: the present embodiment provides a flowchart of a method for manufacturing a vertical cavity surface emitting laser.
FIG. 2: the schematic diagrams of steps S1-S4 in this embodiment.
FIG. 3: forming a schematic diagram of a patterned photoresist layer.
FIG. 4: a trench is formed.
FIG. 5: fig. 4 is a top view.
FIG. 6: fig. 4 is another plan view.
FIG. 7: fig. 4 is another plan view.
FIG. 8: a schematic of the current confinement region is formed.
FIG. 9: fig. 8 is a top view.
FIG. 10: fig. 8 is another top view.
FIG. 11: a schematic of an insulating layer is formed.
FIG. 12: schematic diagrams of upper and lower electrodes are formed.
FIG. 13: the structure of the vertical cavity surface emitting laser is schematically shown.
FIG. 13A: another schematic structure of the VCSEL is shown.
FIG. 14: the structure of the vertical cavity surface emitting laser is schematically illustrated when the vertical cavity surface emitting laser is a back surface emitting structure.
FIG. 15: the present embodiment provides a flowchart of a method for manufacturing a vertical cavity surface emitting laser.
FIG. 16: forming a schematic diagram of a patterned photoresist layer.
FIG. 17: a trench is formed.
FIG. 18: fig. 17 is a top view.
FIG. 19: fig. 17 is another top view.
FIG. 20: fig. 17 is another top view.
FIG. 21: a schematic of the current confinement region is formed.
FIG. 22: schematic diagram of forming a circular ring-shaped light emitting hole.
FIG. 23: schematic diagram of forming a rectangular annular light emitting hole.
FIG. 24: a schematic of an insulating layer is formed.
FIG. 25: schematic diagrams of upper and lower electrodes are formed.
FIG. 26: a schematic of a dielectric layer is formed.
FIG. 27 is a schematic view showing: fig. 25 is a top view.
FIG. 28: the vertical cavity surface emitting laser emits a ring-shaped laser beam.
FIG. 29: the back side emitting structure emits a ring-shaped laser beam.
FIG. 30: another structure diagram of the vertical cavity surface emitting laser in this embodiment is shown.
FIG. 31: another structure diagram of the vertical cavity surface emitting laser in this embodiment is shown.
FIG. 32: another structure diagram of the vertical cavity surface emitting laser in this embodiment is shown.
FIG. 33: another structure diagram of the vertical cavity surface emitting laser in this embodiment is shown.
FIG. 34: another structure diagram of the vertical cavity surface emitting laser in this embodiment is shown.
FIG. 35: a comparison of a hollow annular luminous hole and a solid circular luminous hole.
FIG. 36: arrangement of vertical cavity surface emitting lasers in this embodiment.
FIG. 37: the divergence angle of the vertical cavity surface emitting laser in this embodiment is schematically shown.
FIG. 38: the present embodiment provides a schematic diagram of a light emitting device.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
As shown in fig. 1, the present embodiment proposes a method for manufacturing a vertical cavity surface emitting laser, including:
s1: providing a substrate;
s2: forming a first reflective layer on the substrate;
s3: forming an active layer on the first reflective layer;
s4: forming a second reflective layer on the active layer;
s5: and forming at least one annular light emitting region on the second reflecting layer or/and the first reflecting layer.
As shown in fig. 2, in steps S1-S4, a substrate 101 is provided, a first reflective layer 102 is formed on the substrate 101, an active layer 103 is formed on the first reflective layer 102, and a second reflective layer 104 is formed on the active layer 103. In this embodiment, the substrate 101 may be any material suitable for forming a vertical cavity surface emitting laser, such as gallium arsenide (GaAs). The substrate 101 may be an N-type doped semiconductor substrate, or a P-type doped semiconductor substrate, and the doping may reduce the contact resistance of the ohmic contact between the subsequently formed electrode and the semiconductor substrate, in this embodiment, the substrate 101 is, for example, an N-type doped semiconductor substrate.
As shown in fig. 2, in the present embodiment, the first reflective layer 102 may be formed by laminating two materials having different refractive indexes, for example, AlGaAs and GaAs, or AlGaAs of high aluminum composition and AlGaAs of low aluminum composition, the first reflective layer 102 may be an N-type mirror, and the first reflective layer 102 may be an N-type bragg mirror. The active layer 103 includes a quantum well composite structure formed by stacking GaAs and AlGaAs, or InGaAs and AlGaAs materials, and the active layer 103 converts electric energy into optical energy. The second reflective layer 104 may include a stack of two materials having different refractive indexes, i.e., AlGaAs and GaAs, or AlGaAs of a high aluminum composition and AlGaAs of a low aluminum composition, the second reflective layer 104 may be a P-type mirror, and the second reflective layer 104 may be a P-type bragg mirror. The first reflective layer 102 and the second reflective layer 104 are used for reflection enhancement of light generated by the active layer 103 and then emitted from the surface of the second reflective layer 104.
In some embodiments, the first reflective layer 102, the active layer 103, and the second reflective layer 104 may be formed, for example, by a chemical vapor deposition method.
In some embodiments, a buffer layer is further formed between the substrate 101 and the first reflective layer 102 to effectively release stress and dislocation filtering between the substrate 101 and the first reflective layer 102.
In some embodiments, the sum of the thicknesses of the first reflective layer 102, the active layer 103, and the second reflective layer 104 is between 8-10 microns.
In some embodiments, the substrate 101 may be a sapphire substrate or other material substrate, or at least the top surface of the substrate 101 may be comprised of one of silicon, gallium arsenide, silicon carbide, aluminum nitride, gallium nitride.
In some embodiments, the first reflective layer 102 or the second reflective layer 104 comprises a series of alternating layers of materials of different refractive indices, wherein the effective optical thickness of each alternating layer (the layer thickness times the layer refractive index) is an odd integer multiple of the operating wavelength of the quarter-wavelength VCSEL, i.e., the effective optical thickness of each alternating layer is a quarter of an odd integer multiple of the operating wavelength of the VCSEL. Suitable dielectric materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include tantalum oxide, titanium oxide, aluminum oxide, titanium nitride, silicon nitride, and the like. Suitable semiconducting materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include gallium nitride, aluminum nitride, and aluminum gallium nitride. However, in some embodiments, the first reflective layer 102 and the second reflective layer 104 may be formed of other materials.
In some embodiments, the active layer 103 may include one or more nitride semiconductor layers including one or more quantum well layers or one or more quantum dot layers sandwiched between respective pairs of barrier layers.
As shown in fig. 3 to 4, in step S5, a patterned photoresist layer 105 is first formed on the second reflective layer 104, and then the second reflective layer 104 is etched down according to the patterned photoresist layer 105 to form a plurality of trenches 106.
As shown in fig. 4, in the present embodiment, etching is performed from the second reflective layer 104 down to the first reflective layer 102 by an etching process. In the present embodiment, the depth of the trench 106 may be 3-5 microns, the depth is, for example, 3 microns, 4 microns, the width is 2-10 microns, the width is, for example, 2 microns, 3 microns, 5 microns, etc., and the distance between two adjacent trenches 106 is 2-10 microns, for example, 5 microns, 7 microns.
In some embodiments, the trench 106 may be formed, for example, by wet etching or dry etching.
As shown in fig. 5, fig. 5 is a top view of fig. 4, in this embodiment, the grooves 106 on both sides form a ring-shaped groove, which is easy to form a circular light-emitting region, and the difference between the outer diameter and the inner diameter of the ring shape is 0.5-10 micrometers, and optionally, the difference between the outer diameter and the inner diameter of the ring shape is 5-6 micrometers.
As shown in fig. 5, a cylindrical groove 1061 is further included in the middle of the grooves 106 on both sides, the cylindrical groove 1061 is located in the middle area of the grooves 106 on both sides, that is, the grooves 106 on both sides are symmetrical with respect to the cylindrical groove 1061, the cylindrical groove 1061 forms a circular light emitting area, that is, a circular light emitting area having a circular hollow area, that is, a circular light emitting area, and it should be noted that the circular hollow area is a closed area.
As shown in fig. 6, in some embodiments, a rectangular groove 1062 may be further formed in the middle of the two side grooves 106, and the rectangular groove 1062 is located in the middle area of the two side grooves 106, that is, the two side grooves 106 are symmetrical with respect to the rectangular groove 1062, that is, a circular light emitting area having a rectangular hollow area is formed, and it should be noted that the rectangular hollow area is a closed area.
As shown in fig. 7, in some embodiments, the grooves 106 on both sides may also be formed in a rectangular ring shape, thereby forming a rectangular light emitting region, and a rectangular groove 1062 is formed in the ring-shaped groove, thereby forming a rectangular ring-shaped light emitting region, i.e., a rectangular light emitting region having a rectangular hollow region.
In the present embodiment, the shape of the groove forming the light emitting region is not limited, and may be, for example, an ellipse, a hexagon, a regular octagon, or other patterns.
In this embodiment, the grooves forming the hollow area may also be oval, regular hexagon, triangle or other regular or irregular patterns, and the shape of the grooves forming the hollow area is not limited at all.
As shown in fig. 8, in step S5, after forming the trenches of the light emitting region and the hollow region, the sidewalls of the trenches 106 are oxidized by high temperature oxidation, so as to form at least two current confinement regions 107 in the second reflective layer 104, the current confinement regions 107 in contact with the trenches 106 on both sides form a ring structure, the current confinement regions 107 in contact with the trenches 106 in the middle form a ring structure, the current confinement regions 107 are in contact with the sidewalls of the trenches 106, and a portion of the current confinement regions 107 is located in the middle region of the second reflective layer 104, and a light emitting hole is defined by the current confinement regions 107, and a ring-shaped light emitting region is formed by the current confinement regions 107 at both ends and the current confinement region 107 in the middle. Since the trenches 106 and the current confinement regions 107 cut off the current paths of the respective regions, light generated by the active layer 103 is emitted from the annular light emitting region, thereby forming annular light.
In some embodiments, the current confinement region 107 includes one of an air pillar type current confinement structure, an ion implantation type current confinement structure, a buried heterojunction type current confinement structure and an oxidation confinement type current confinement structure, and the oxidation confinement type current confinement structure is used in this embodiment.
As shown in fig. 9, fig. 9 is a top view of fig. 8, this embodiment provides a rectangular light emitting region 108a having a rectangular hollow region, and it can be seen from the figure that the trenches 106 on both sides expose the first reflective layer 102 on the outer side, the trenches 106 on both sides also define a rectangular mesa structure (i.e. the region of the second reflective layer 104), and a trench in the middle is formed in the rectangular mesa structure, so that a rectangular hollow region (i.e. the exposed first reflective layer 102) is formed, and then a current confinement region 107 is formed in the second reflective layer 104, since the current confinement region 107 limits the passage of a part of the current, and the current cannot pass through the rectangular hollow region, so that a rectangular light emitting region 108a having a rectangular hollow region is formed, and the rectangular light emitting region 108a can also be referred to as a rectangular light emitting ring, it should be noted that, in order to display the rectangular light emitting region 108a, the rectangular light emitting area 108a is particularly shown in fig. 9. In the present embodiment, the width of the rectangular light emitting area 108a may be, for example, 2-8 microns, such as 3-4 microns, 5-6 microns. The width of the rectangular light emitting region 108a is the difference between the outer diameter and the inner diameter of the rectangular light emitting region 108 a.
As shown in fig. 10, fig. 10 is a top view of fig. 8, this embodiment shows a circular light emitting region 108b having a circular hollow region, and it can be seen from the figure that the trenches 106 at two sides expose the outer first reflective layer 102, and the trenches 106 at two sides also define a circular mesa structure (region of the second reflective layer 104), and a middle trench is formed on the circular mesa structure, so that a circular hollow region (region of the exposed first reflective layer 102) is formed, and then a current confinement region 107 is formed in the second reflective layer 104, so that a circular light emitting region 108b having a circular hollow region is formed, since the current confinement region 107 confines the passage of a part of the current, and the current cannot pass through the circular hollow region, the circular light emitting region 108b can also be referred to as a circular light emitting ring, and it should be noted that, in order to display the circular light emitting region 108b, the circular light emitting region 108b is particularly depicted in fig. 10. In the present embodiment, the width of the circular light emitting region 108b may be, for example, 2-8 microns, such as 4-5 microns, 6-7 microns. The width of circular light emitting area 108b is the difference between the outer diameter and the inner diameter of circular light emitting area 108 b.
In some embodiments, a circular light-emitting region with a rectangular hollow region may also be formed, a square light-emitting region with a circular hollow region may also be formed, a circular light-emitting region with a hexagonal hollow region may also be formed, and a circular light-emitting region with an elliptical hollow region may also be formed. The circular hollow region, the rectangular hollow region, the elliptical hollow region, and the polygonal hollow region are all closed regions.
As shown in fig. 11, after the current confinement region 107 is formed, an insulating layer 109 is formed in the trench 106, the insulating layer 109 is located on the bottom and the sidewall of the trench 106, and a part of the insulating layer 109 is located on the second reflective layer 104. The material of the insulating layer 109 may be silicon nitride or silicon oxide or other insulating materials, the thickness of the insulating layer 109 may be 100-300 nm, and the insulating layer 109 may protect the current confinement region 107 and may also effectively isolate adjacent mesa structures.
As shown in fig. 11, it should be noted that the insulating layer 109 located in the trench 106 may be referred to as being located between the second reflective layers 104, but the insulating layer 109 located in the trench 106 cannot be referred to as being located in the second reflective layer 104, that is, the trench 106 is located outside the second reflective layer 104. In this embodiment, the current confinement region 107 may be referred to as being located within the second reflective layer 104.
In the present embodiment, the insulating layer 109 may be formed, for example, by chemical vapor deposition.
As shown in fig. 12, in the present embodiment, an upper electrode 110 is formed on an insulating layer 109 and a lower electrode 111 is formed on the back surface of a substrate 101. In an embodiment, the upper electrode 110 is also in contact with the second reflective layer 104, and the material of the upper electrode 110 and the lower electrode 111 may include one or a combination of Au metal, Ag metal, Pt metal, Ge metal, Ti metal, and Ni metal.
As shown in fig. 13, in this embodiment, a dielectric layer 112 may be further formed on the second reflective layer 104 to protect the second reflective layer 104. The material of the dielectric layer 112 may be silicon nitride or silicon oxide or other insulating protective material.
As shown in fig. 13, when the vcsel operates, current is injected from the upper electrode 110, passes through the second reflective layer 104, and enters the active layer 103, and due to the existence of the current confinement region 107 and the trench 106, current cannot pass through the current confinement region 107 and the trench 106, and therefore, stimulated emission can be generated only in the annular light emitting region, so as to form an annular waveguide structure, and laser oscillation is generated in the resonant cavity formed by the second reflective layer 104 and the first reflective layer 102, and then emitted from the second reflective layer 104, so as to form emitted light.
As shown in fig. 13, when forming the annular light emitting region, the width of the annular light emitting region is adjusted by adjusting the width of the middle groove 106. Meanwhile, the width of the annular light emitting region can also be adjusted by adjusting the width of the current confinement region 107 in contact with the trench 106.
As shown in fig. 13A, fig. 13A is different from fig. 13 in that the width of the current confinement region 107 in contact with the middle trench 106 in fig. 13A is larger than the width of the current confinement region 107 in contact with the middle trench 106 in fig. 13. In forming the structure in fig. 13A, first, the current confinement regions 107 on both sides are formed simultaneously with the current confinement region 107 in the middle, and then after the current confinement regions 107 on both sides are protected, the current confinement region 107 in the middle is grown again. Since the width of the current confinement region 107 in the middle is larger than the width of the current confinement regions 107 on both sides, the width of the annular light emitting region can be adjusted. The present invention is not limited thereto, and in some embodiments, the width of the annular light emitting region may also be adjusted by adjusting the width of the current confinement region 107 in contact with the trenches 106 on both sides, i.e., the width of the current confinement region 107 in contact with the trenches 106 on both sides is larger than the width of the current confinement region 107 in contact with the trench 106 in the middle.
In some embodiments, the VCSEL can also emit rectangular hollow rays, elliptical hollow rays.
In this embodiment, the VCSEL is a front VCSEL, and in some embodiments, it can be a back VCSEL.
As shown in fig. 14, the present embodiment proposes a vertical cavity surface emitting laser, which is a back surface emitting structure, and includes: a second reflective layer 104, a back surface of the second reflective layer 104 having a lower electrode 111; an active layer 103 on the second reflective layer 104; a first reflective layer 102 on the active layer 103; a current confinement region 107 is provided in the first reflective layer 102, and an emission aperture is defined by the current confinement region 107; a substrate 101 on the first reflective layer 102; a dielectric layer 112 on the substrate 101; a trench 106, wherein the trench 106 extends from the substrate 101 into the second reflective layer 104 to form the emission hole into a hollow emission hole, i.e. to form a ring-shaped light emitting region; an insulating layer 109 on the bottom and sidewalls of the trench 106, and an upper electrode 110 on the insulating layer 109 and extending to both sides of the trench 106 to form an ohmic contact with the substrate 101.
As shown in fig. 14, when the vcsel operates, current is injected from the upper electrode 110, passes through the first reflective layer 102, enters the active layer 103, and due to the existence of the current confinement region 107 and the trench 106, current cannot pass through the current confinement region 107 and the trench 106, so that stimulated emission can be generated only in the annular light emitting region to form an annular waveguide structure, and laser oscillation is generated in the second reflective layer 104 and the resonant cavity formed by the first reflective layer 102, and then emitted from the substrate 101 to form emitted light.
In some embodiments, the back emitting structure may also emit rectangular hollow rays, elliptical hollow rays.
As shown in fig. 13, the annular light emitting region is formed in the second reflective layer 104, as shown in fig. 14, the annular light emitting region is formed in the first reflective layer 102, and in the present embodiment, the method of forming the annular light emitting region in fig. 13 is the same as the method of forming the annular light emitting region in fig. 14, and the present embodiment is not described.
It should be noted that the current confinement region 107 may also be formed in the first reflective layer 102 and the second reflective layer 104 at the same time to form an annular light emitting region in the first reflective layer 102 and the second reflective layer 104, and the method for forming the current confinement region 107 in the first reflective layer 102 and the second reflective layer 104 at the same time is consistent with the above method, and this embodiment is not described.
As shown in fig. 15, the present embodiment proposes a method of manufacturing a vertical cavity surface emitting laser, including:
s1: providing a substrate;
s2: forming a first reflective layer on the substrate;
s3: forming an active layer on the first reflective layer;
s4: forming a second reflective layer on the active layer;
s5: at least two current limiting areas are formed in the second reflecting layer or/and the first reflecting layer to form at least one annular light emitting area.
As shown in fig. 2, in steps S1-S4, a substrate 101 is provided, a first reflective layer 102 is formed on the substrate 101, an active layer 103 is formed on the first reflective layer 102, and a second reflective layer 104 is formed on the active layer 103. In this embodiment, the substrate 101 may be any material suitable for forming a vertical cavity surface emitting laser, such as gallium arsenide (GaAs). The substrate 101 may be an N-type doped semiconductor substrate, or a P-type doped semiconductor substrate, and the doping may reduce the contact resistance of the ohmic contact between the subsequently formed electrode and the semiconductor substrate, in this embodiment, the substrate 101 is, for example, an N-type doped semiconductor substrate.
As shown in fig. 2, in the present embodiment, the first reflective layer 102 may be formed by laminating two materials having different refractive indexes, for example, AlGaAs and GaAs or AlGaAs having a high aluminum composition and AlGaAs having a low aluminum composition, the first reflective layer 102 may be an N-type mirror, and the first reflective layer 102 may be an N-type bragg mirror. The active layer 103 includes a quantum well composite structure stacked and composed of GaAs and AlGaAs or InGaAs and AlGaAs materials, and the active layer 103 converts electric energy into optical energy. The second reflective layer 104 may include a stack of two materials having different refractive indexes, i.e., AlGaAs and GaAs or AlGaAs of a high aluminum composition and AlGaAs of a low aluminum composition, the second reflective layer 104 may be a P-type mirror, and the second reflective layer 104 may be a P-type bragg mirror. The first reflective layer 102 and the second reflective layer 104 are used for reflection enhancement of light generated by the active layer 103 and then emitted from the surface of the second reflective layer 104.
In some embodiments, the first reflective layer 102, the active layer 103, and the second reflective layer 104 may be formed, for example, by a chemical vapor deposition method.
In some embodiments, a buffer layer is further formed between the substrate 101 and the first reflective layer 102 to effectively release stress and dislocation filtering between the substrate 101 and the first reflective layer 102.
In some embodiments, the sum of the thicknesses of the first reflective layer 102, the active layer 103, and the second reflective layer 104 is between 8-10 microns.
In some embodiments, the substrate 101 may be a sapphire substrate, or at least the top surface of the substrate 101 may be comprised of one of silicon, gallium arsenide, silicon carbide, aluminum nitride, gallium nitride.
In some embodiments, the first reflective layer 102 or the second reflective layer 104 comprises a series of alternating layers of materials of different refractive indices, wherein the effective optical thickness of each alternating layer (the layer thickness times the layer refractive index) is an odd integer multiple of the operating wavelength of the quarter-wavelength VCSEL, i.e., the effective optical thickness of each alternating layer is a quarter of an odd integer multiple of the operating wavelength of the VCSEL. Suitable dielectric materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include tantalum oxide, titanium oxide, aluminum oxide, titanium nitride, silicon nitride, and the like. Suitable semiconducting materials for forming the alternating layers of the first reflective layer 102 or the second reflective layer 104 include gallium nitride, aluminum nitride, and aluminum gallium nitride.
In some embodiments, the active layer 103 may include one or more nitride semiconductor layers including one or more quantum well layers or one or more quantum dot layers sandwiched between respective pairs of barrier layers.
As shown in fig. 16 to 17, before forming the current confinement region, a trench 106 is further formed, first, a patterned photoresist layer 105 is formed on the second reflective layer 104, the patterned photoresist layer 105 is located in a middle region of the second reflective layer 104 to expose two ends of the second reflective layer 104, and then the second reflective layer 104 is etched down according to the patterned photoresist layer 105 by an etching process to form the trench 106, where it is to be noted that the trench 106 is a ring-shaped structure, a region between the trenches 106 is a mesa structure, that is, the mesa structure includes the second reflective layer 104, the active layer 103 and a portion of the first reflective layer 102, and the trench 106 extends from the second reflective layer 104 into the first reflective layer 102.
In this embodiment, the trench 106 may be formed by wet etching or dry etching.
As shown in fig. 18, fig. 18 is a top view of fig. 17, and it can be seen that the trench 106 exposes a portion of the first reflective layer 102, that is, the trench 106 of fig. 17 has a circular ring structure, and the mesa structure is formed in a cylindrical shape, so that a circular light emitting hole is easily formed. In this embodiment, the difference between the outer diameter and the inner diameter of the circular ring structure is between 1 and 9 microns, and optionally the difference between the outer diameter and the inner diameter of the circular ring structure is between 3 and 5 microns.
As shown in fig. 19-20, in some embodiments, the groove 106 may also be rectangular ring shaped, or may also be elliptical ring shaped.
The shape of the groove 106 is not limited in this embodiment, and in some embodiments, the groove 106 may also be a hexagonal ring.
As shown in fig. 21, in step S5, at least two current confinement regions 107 are formed in the second reflective layer 104, in this embodiment, at least two current confinement regions 107 are formed by an ion implantation method and a high temperature oxidation method, where it is noted that the current confinement region 107 of an oxide confinement structure is formed by performing high temperature oxidation on the sidewall of the trench 106, or the current confinement region 107 is formed inward of the second reflective layer 104 along the sidewall of the trench 106 by an ion implantation method, and then the current confinement region 107 is formed in the middle region of the second reflective layer 104 by an ion implantation method. Since the current confinement region 107 formed by the ion implantation method has high resistance, current cannot pass through the current confinement region 107, current cannot enter the center of the active layer 103, and laser oscillation cannot be formed in the center region of the active layer 103, thereby generating effective ring light. It should be noted that the current confinement region 107 in contact with the sidewall of the trench 106 forms a ring structure, and the current confinement region 107 located in the middle region of the second emission layer 104 may have a circular structure, a rectangular structure, or a hexagonal structure, for example.
As shown in fig. 21, in the present embodiment, a ring-shaped light emitting region is formed by the middle current confinement region 107 and the current confinement regions 107 on both sides, and the middle current confinement region 107 may extend toward the current confinement regions 107 on both sides, or the current confinement regions 107 on both sides may extend toward the middle current confinement region 107, so that the width of the ring-shaped light emitting region is adjusted.
As shown in fig. 22, fig. 22 is a top view of fig. 21, and as shown in fig. 21 and fig. 22, at least two current confinement regions 107 in the second reflective layer 104 form a circular light emitting region, i.e., a circular light emitting region 108b, where the circular light emitting region 108b may also be referred to as a circular light emitting ring, and it should be noted that the circular light emitting region 108b is especially drawn in fig. 22 to display the circular light emitting region 108 b.
As shown in fig. 23, in some embodiments, when the groove 106 is a rectangular ring structure, a rectangular light emitting region 108a with a hollow area may also be formed, and the rectangular light emitting region 108a may also be referred to as a rectangular light emitting ring.
In some embodiments, an oval light emitting region with hollow regions, a hexagonal light emitting region with hollow regions, or other annular light emitting regions may also be formed.
As shown in fig. 24, after the current confinement region 107 is formed, an insulating layer 109 may be formed in the trench 106, the insulating layer 109 is located on the bottom and the sidewall of the trench 106, and a portion of the insulating layer 109 is located on the second reflective layer 104, and the material of the insulating layer 109 may be silicon nitride, silicon oxide, or other insulating protection material.
As shown in fig. 25, an upper electrode 110 is formed on the insulating layer 109 and a lower electrode 111 is formed on the back surface of the substrate 101. Wherein the upper electrode 110 is located on the insulating layer 109, and the upper electrode 110 is further in contact with the second reflective layer 104, in this embodiment, the material of the upper electrode 110 and the lower electrode 111 may be gold, perkin, nickel or other metal materials. In forming the lower electrode 111, thinning is performed first, the back surface of the substrate 101 is polished, and then the lower electrode 111 is formed on the back surface of the substrate 101.
In some embodiments, the upper electrode 110 may be formed before the trench 106 is formed, which may improve the etching precision and the product yield. The simultaneously formed upper electrode 110 can also be used as an alignment mark for subsequent processes such as photolithography and etching.
As shown in fig. 26, in some embodiments, a dielectric layer 112 may be further formed on the second reflective layer 104 to protect the second reflective layer 104. The dielectric layer 112 is disposed on the second reflective layer 104 and contacts the upper electrode 110. The material of the dielectric layer 112 may be silicon nitride, silicon oxide or other insulating protective material.
As shown in fig. 27 to 28, when the vcsel operates, a current is injected from the upper electrode 110, passes through the second reflective layer 104 and the active layer 103, and forms laser oscillation in the resonant cavity formed by the first reflective layer 102 and the second reflective layer 104, and due to the existence of the high-resistance region current confinement region 107, the current cannot enter the center of the active layer 103, the laser oscillation cannot be formed in the center region of the active layer 103, and the current can only generate stimulated emission in the circular light emitting region 108b formed in the current confinement region 107, thereby forming an annular waveguide structure, and then exits from the second reflective layer 104, thereby forming an exit light L.
In some embodiments, the VCSEL may also emit a rectangular hollow laser line, an elliptical hollow laser line, a hexagonal hollow laser line, or a concentric ring shape composed of a plurality of rings.
In this embodiment, the vcsel has a front emission structure, and in some embodiments, the vcsel can also have a back emission structure.
As shown in fig. 29, the present embodiment provides a vertical cavity surface emitting laser, which is a back surface emitting structure, and includes: a second reflective layer 104, a back surface of the second reflective layer 104 comprising a lower electrode 111; an active layer 103 on the second reflective layer 104; a first reflective layer 102 on the active layer 103, wherein a current confinement region 107 is formed in the first reflective layer 102, and a ring-shaped emission hole is defined by the current confinement region 107; a substrate 101 on the first reflective layer 102; a trench 106 extending from the substrate 101 into the second reflective layer 104, an insulating layer 109 on the bottom and sidewalls of the trench 106, and a portion of the insulating layer 109 contacting the substrate 101; an upper electrode 110 on the insulating layer 109 and in contact with the substrate 101; and a dielectric layer 112 on the substrate 101 and contacting the upper electrode 110.
As shown in fig. 29, when the vcsel operates, current is injected from the upper electrode 110, passes through the substrate 101, the first reflective layer 102, and enters the active layer 103, and due to the existence of the current confinement region 107 in the high-resistance region, the current can only generate stimulated emission from the ring-shaped structure formed by the current confinement region 107 to form a ring-shaped waveguide structure, and laser oscillation is formed in the resonant cavity formed by the first reflective layer 102 and the second reflective layer 104, and then exits from the first reflective layer 102 to form an exiting ray L.
As shown in FIG. 29, in this embodiment, the VCSEL can form a circular ring hollow laser beam, and in some embodiments, the VCSEL can also form a rectangular hollow laser beam, an elliptical hollow laser line, or a hexagonal hollow laser line.
As shown in fig. 28, an annular light emitting region is formed in the second reflective layer 104, and as shown in fig. 29, an annular light emitting region is formed in the first reflective layer 102, and in the present embodiment, a method of forming an annular light emitting region in fig. 28 is the same as a method of forming an annular light emitting region in fig. 29, and the present embodiment is not described.
It should be noted that the current confinement region 107 may also be formed in the first reflective layer 102 and the second reflective layer 104 simultaneously to form an annular light emitting region, and the method of forming the current confinement region 107 in the first reflective layer 102 and the second reflective layer 104 simultaneously is the same as the above method, and this embodiment is not described.
As shown in fig. 30, the present embodiment further provides a vcsel, and the vcsel in fig. 30 is different from the vcsel in fig. 13 in that the current confinement regions in fig. 30 are formed in different reflective layers, for example, as shown in fig. 30, a first current confinement region 1071 is formed in the second reflective layer 104, a second current confinement region 1072 is formed in the first reflective layer, the first current confinement region 1071 contacts with the sidewalls of the trenches at both ends to form a ring-shaped structure, and the second current confinement region 1072 contacts with the sidewalls of the trench 106 in the middle to form a ring-shaped light emitting region, so that a ring-shaped light emitting region is formed by the first current confinement region 1071 and the second current confinement region. The first current confinement region 1071 and the second current confinement region 1072 may be formed, for example, by two different depth ion implantations. Since the first and second current confinement regions 1071 and 1072 formed by the ion implantation method have high resistance, current cannot pass through the first and second current confinement regions 1071 and 1072, current cannot enter the center of the active layer 103, and laser oscillation cannot be formed in the center region of the active layer 103, thereby generating effective ring light. In this embodiment, the inner diameter of the annular light emitting region may be, for example, 2 to 50 micrometers, and the outer diameter of the annular light emitting region may be, for example, 5 to 500 micrometers.
As shown in fig. 31, in some embodiments, a first current confinement region 1071 and a second current confinement region may be further formed in the active layer 103, the first current confinement region 1071 is in contact with the sidewalls of the trenches at both ends to form a ring-shaped structure, the second current confinement region 1072 is in contact with the sidewall of the trench 106 in the middle to form a ring-shaped structure, and a ring-shaped light emitting region is formed by the first current confinement region 1071 and the second current confinement region 1072. The inner diameter of the annular light emitting region may be, for example, 10-30 microns, and the outer diameter of the annular light emitting region may be, for example, 100-300 microns.
As shown in fig. 32, the structure of the vertical cavity surface emitting laser in fig. 32 is different from that of the vertical cavity surface emitting laser in fig. 28 in that the current confinement region in the vertical cavity surface emitting laser in fig. 32 is located in a different reflective layer. For example, the first current confinement region 1071 is formed in the middle region of the second reflective layer 104 by an ion implantation method, the second current confinement region 1072 is formed in the first reflective layer 102, and the first current confinement region 1071 is located between the second current confinement regions 1072, and the second current confinement region 1072 is in contact with the sidewall of the trench 106 to form a ring-shaped structure. The first and second current confinement regions 1071 and 1072 have high resistance, current cannot pass through the first and second current confinement regions 1071 and 1072, current cannot enter the center of the active layer 103, and laser oscillation cannot be formed in the center region of the active layer 103, thereby generating effective ring light. In this embodiment, the inner diameter of the annular light emitting region may be, for example, 20-40 microns, and the outer diameter of the annular light emitting region may be, for example, 300-400 microns.
As shown in fig. 33, in some embodiments, the vcsel can further include a shielding layer 113, for example, a current confinement region 107 is formed in the second reflective layer 104, a light emitting hole is defined by the current confinement region 107, and then the shielding layer 107 is formed in a middle region of the light emitting hole, i.e., the shielding layer 107 is located on the second reflective layer 104. The light emitted from the active layer 104 cannot pass through the blocking layer 113 due to the blocking layer 113, and thus a ring-shaped light emitting region is formed. In some embodiments, the shielding layer 113 may be, for example, a highly reflective layer or a metal layer. In some embodiments, the inner diameter of the annular light emitting region formed by the current confinement region 107 and the shielding layer 113 is, for example, 30-40 microns, and the outer diameter of the annular light emitting region formed by the current confinement region 107 and the shielding layer 113 is, for example, 400-500 microns.
As shown in fig. 34, in some embodiments, a concentric light emitting ring may be further formed by the current confinement region, for example, a first current confinement region 1071 and a second current confinement region 1072 are formed in the second reflective layer 104, the first current confinement region 1071 is a ring structure, and the second current confinement region 1072 is a ring structure, so that the concentric light emitting ring is formed by the first current confinement region 1071 and the second current confinement region 1072.
In some embodiments, it is also possible to form an air gap layer (airgap layer) in the active layer by a horizontal etching method and use the air gap layer as a current confinement region, and form a ring-shaped light emitting region according to the current confinement region, or form a current confinement region in the active layer by means of a tunnel junction (tunnel junction), and form a ring-shaped light emitting region according to the current confinement region.
As shown in fig. 35, in the case where the process limitation is the same, the filling ratio of the effective light emitting area of the hollow annular light emitting hole a is larger than that of the solid light emitting hole B, for example, in the case where the lateral transfer distance of the P-terminal electrode is the same.
As shown in fig. 36, when the vcsel 100 emits a circular shape of the center hole laser beam, the vcsels 100 are arranged in a staggered manner, for example, the vcsels in the first row and the vcsels in the second row are staggered, the vcsels in the third row are arranged in the same manner as the vcsels in the first row, and the vcsels in the fourth row are arranged in the same manner as the vcsels in the second row, as shown in fig. 36 (a). When the vertical cavity surface emitting laser 100 emits a rectangular mesopore laser beam, the vertical cavity surface emitting laser 100 may be arranged, for example, in a matrix manner as shown in fig. 36 (b). The array of the vertical cavity surface emitting lasers is formed through the arrangement mode, so that the effect of larger light emitting area can be realized, and the chip with large light emitting area can be realized.
As shown in fig. 37, when the vertical cavity surface emitting laser adopts a circular ring-shaped light emitting hole, a longitudinal mode of the echo wall can be realized, which is favorable for coupling with the optical fiber. In fig. 37(a), when the near field C uses a circular ring light emitting hole with a small radius, the corresponding echo wall standing wave is short, the number of intensity points is small, and the far field D divergence angle is small. In fig. 37(b), when the near field C employs a circular ring light emitting hole with a large radius, and therefore the corresponding echo wall has a large standing wavelength, the number of intensity points is large, and the divergence angle of the far field D is large, and the divergence angle is, for example, 40 to 60 °.
As shown in fig. 38, the present embodiment further provides a light emitting device 10, where the light emitting device 10 includes a substrate 11 and a light emitting element 12 disposed on the substrate 11. The light emitting element 12 includes at least one vertical cavity surface emitting laser 13 therein, and the vertical cavity surface emitting laser 13 includes at least one annular light emitting region therein.
In this embodiment, the vertical cavity surface emitting laser may further include a plurality of hollow regions, so that a plurality of annular light emitting regions are realized, thereby improving the light emitting efficiency and the light emitting uniformity.
In the present embodiment, the vertical cavity surface emitting laser and the light emitting device 10 using the same can be used as various light sources for light emission, and an array of vertical cavity surface emitting lasers can also be used as a multi-beam light source. The vertical cavity surface emitting laser in the present embodiment can be used in image forming apparatuses including laser beam printers, copiers, and facsimile machines.
The vertical cavity surface emitting laser provided by the embodiment can be used for laser radar, infrared cameras, 3D depth recognition detectors and image signal processing. In some embodiments, the VCSEL may also be used as a light source in optical communications, such as a laser in an optical transceiver module of a fiber optic module.
In this embodiment, by forming a hollow light emitting region in the vertical cavity surface emitting laser, a larger light emitting area can be realized and light emission uniformity can be improved under the same P-side current diffusion length condition.
The above description is only a preferred embodiment of the present application and a description of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present invention related to the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above features with (but not limited to) technical features having similar functions disclosed in the present application.
Other technical features than those described in the specification are known to those skilled in the art, and are not described herein in detail in order to highlight the innovative features of the present invention.
Claims (10)
1. A vertical cavity surface emitting laser, comprising:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer;
a second reflective layer disposed on the active layer;
at least two current confinement regions formed within the second reflective layer and/or the first reflective layer;
at least one annular light emitting area formed on the second reflecting layer or/and the first reflecting layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
2. A vertical cavity surface emitting laser according to claim 1, further comprising at least two trenches, a portion of said current confinement region being in contact with sidewalls of said trenches.
3. A vertical cavity surface emitting laser according to claim 2, wherein at least one of said trenches is of an annular configuration and at least one of said current confinement regions is of an annular configuration.
4. A vertical cavity surface emitting laser according to claim 1, wherein the width of said at least one light emitting region is adjusted by adjusting the width of said current confinement region.
5. A vcsel according to claim 1, wherein said at least one annular light emitting region has an inner diameter in the range of 2-50 microns and an outer diameter in the range of 5-500 microns.
6. A vertical cavity surface emitting laser according to claim 1, wherein said at least one annular light emitting region is a closed region.
7. A vcsel according to claim 1, further comprising a shielding layer between portions of said current confinement regions, said at least one annular light-emitting region being formed by said shielding layer and said current confinement regions.
8. A vertical cavity surface emitting laser according to claim 1, wherein: the vertical cavity surface emitting laser includes a front vertical cavity surface emitting laser or a back vertical cavity surface emitting laser.
9. A method of manufacturing a vertical cavity surface emitting laser, comprising:
providing a substrate;
forming a first reflective layer on the substrate;
forming an active layer on the first reflective layer;
forming a second reflective layer on the active layer;
forming at least two current confinement regions within the second reflective layer;
forming at least one annular light emitting region in the second reflecting layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
10. A light emitting device, comprising:
a substrate;
a light emitting unit disposed on the substrate, the light emitting unit including at least one vertical cavity surface emitting laser;
wherein the vertical cavity surface emitting laser includes:
a substrate;
a first reflective layer disposed on the substrate;
an active layer disposed on the first reflective layer;
a second reflective layer disposed on the active layer;
at least two current confinement regions formed in the sidewalls and middle region of the second reflective layer;
at least one annular light emitting area formed on the second reflecting layer for emitting light;
and light emitting holes are defined by the at least two current limiting areas, and light generated by the active layer is emitted from the light emitting holes to form the at least one annular light emitting area.
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