CN112968354A - Vertical cavity surface emitting laser, laser chip and laser emitting module - Google Patents
Vertical cavity surface emitting laser, laser chip and laser emitting module Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a vertical cavity surface emitting laser, a laser chip and a laser emitting module, wherein the vertical cavity surface emitting laser comprises a substrate, a platform structure and a channel, the platform structure is formed on the substrate and comprises a light emitting hole, and the laser emitting module also comprises: a first ohmic contact layer and an epitaxial structure; a first ohmic contact layer formed on the substrate; an epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein a tunnel section is arranged between the at least two active layers; the second ohmic contact layer is formed on the at least one mesa structure; the first electrode layer is formed on the second ohmic contact layer; wherein, at least one type structure is regular polygon structure, and the light-emitting hole is corresponding regular polygon light-emitting hole, and the edge of light-emitting hole is equal apart from the marginal distance of channel, and the interior angle of regular polygon is divided by 360 integer. Thereby, the luminous energy per unit area is greatly improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of lasers, in particular to a vertical cavity surface emitting laser, a laser chip and a laser emitting module.
Background
Vertical Cavity Surface Emitting Lasers (VCSELs) are developed on the basis of gallium arsenide semiconductor materials, are different from other light sources such as LEDs (light Emitting diodes) and LDs (Laser diodes), have the advantages of small volume, circular output light spots, single longitudinal mode output, small threshold current, low price, easy integration into large-area arrays and the like, and are widely applied to the fields of optical communication, optical interconnection, optical storage and the like. With the increasing popularity of radar and long-range ToF applications, there is an increasing demand for high power density vertical cavity surface emitting laser arrays. However, the light emitting energy per unit area of the conventional vertical cavity surface emitting laser array is low, and the requirement cannot be met.
Disclosure of Invention
The invention provides a vertical cavity surface emitting laser, a laser chip and a laser emitting module, which are used for greatly improving the luminous energy in unit area.
In order to achieve the above object, an embodiment of an aspect of the present invention provides a vertical cavity surface emitting laser, including:
the mesa structure forms on the substrate and includes a luminescence hole, still includes: a first ohmic contact layer and an epitaxial structure; the first ohmic contact layer is formed on the substrate; the epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the first ohmic contact layer, the at least two active layers are formed on the first reflecting layer, a tunnel junction is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers;
a second ohmic contact layer formed on the at least one mesa structure;
a first electrode layer formed on the second ohmic contact layer;
the table structure is a regular polygon structure, the light emitting holes are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the channel are equal, and the inner angle of the regular polygon is divided by 360.
Optionally, the regular polygon structure is a regular triangle structure, and the regular polygon light emitting holes are regular triangle light emitting holes.
Optionally, the regular polygon structure is a square structure, and the regular polygon light emitting hole is a square light emitting hole.
Optionally, the regular polygon structure is a regular hexagon structure, and the regular polygon light emitting holes are regular hexagon light emitting holes.
Optionally, the active layer includes a first semiconductor layer, an active region and a second semiconductor layer, and the active region is disposed between the first semiconductor layer and the second semiconductor layer.
Optionally, the mesa structure further includes a current confinement layer in one of the first reflective layer, the second reflective layer, or the active layer, for defining the light emitting hole.
Optionally, the effective filling ratio of the square light emitting hole is greater than or equal to 20%.
In order to achieve the above object, a second embodiment of the present invention provides a laser chip, including:
a plurality of arrayed lasers, each of said lasers comprising:
the mesa structure forms on the substrate and includes a luminescence hole, still includes: a first ohmic contact layer and an epitaxial structure; the first ohmic contact layer is formed on the substrate; the epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the first ohmic contact layer, the at least two active layers are formed on the first reflecting layer, a tunnel junction is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers;
a second ohmic contact layer formed on the at least one mesa structure;
a first electrode layer formed on the second ohmic contact layer;
the at least one structure is a regular polygon structure, the light emitting holes are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the channel are equal, and the inner angle of the regular polygon is divided by 360.
Optionally, two adjacent mesa structures share a channel therebetween.
In order to achieve the above object, a third embodiment of the present invention provides a laser emitting module including the laser chip;
further comprising: the laser device comprises a substrate, a diffusion sheet and support columns, wherein the laser device chip is arranged on the substrate, the support columns are arranged on the substrate, and the diffusion sheet is arranged on the support columns and used for diffusing laser spots emitted by the laser device chip.
Compared with the prior art, the invention has the following beneficial effects that according to the vertical cavity surface emitting laser, the laser chip and the laser emitting module provided by the embodiment of the invention, the vertical cavity surface emitting laser comprises a substrate, at least one mesa structure and a channel, the mesa structure is formed on the substrate and comprises a light emitting hole, and the invention also comprises: a first ohmic contact layer and an epitaxial structure; a first ohmic contact layer formed on the substrate; an epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the first ohmic contact layer, the at least two active layers are formed on the first reflecting layer, a tunnel section is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers; a second ohmic contact layer formed on the at least one mesa structure; a first electrode layer formed on the second ohmic contact layer; wherein, at least one type structure is regular polygon structure, and the light-emitting hole is corresponding regular polygon light-emitting hole, and the edge of light-emitting hole is equal apart from the distance of channel edge, and wherein, regular polygon's interior angle is divided by 360 integer. Therefore, when the vertical cavity surface emitting lasers are arranged, the vertical cavity surface emitting lasers can be seamlessly spliced, the phenomenon that the space is wasted due to the fact that the vertical cavity surface emitting lasers are left blank is avoided, and then the filling rate of the vertical cavity surface emitting lasers on the laser chip is increased. In addition, due to the addition of the tunnel sections, a plurality of active layers form a series structure, so that current carriers can be repeatedly utilized, and the light emitting intensity of each vertical cavity surface emitting laser is improved on the premise of not improving the current. Further, the light emission energy per unit area is greatly improved. Thereby increasing the luminous energy per chip area in both the horizontal direction (plane) and the vertical direction (cross section).
Drawings
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view along the direction AA' in FIG. 1.
Fig. 3 is a schematic structural diagram of a tunnel junction in a vertical cavity surface emitting laser according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a first active layer in a VCSEL according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a VCSEL according to another embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a VCSEL according to still another embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a VCSEL according to still another embodiment of the present invention;
fig. 8 is a schematic structural diagram of a laser chip according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a laser chip according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a laser chip according to another embodiment of the present invention;
fig. 11 is a schematic structural diagram of a laser emitting module according to an embodiment of the present invention;
FIG. 12 is a graph of the effective fill fraction of a laser chip as a function of the circular hole diameter as contemplated by an embodiment of the present invention;
fig. 13 is a graph of the effective fill fraction of a laser chip as a function of the size of the laser chip of fig. 1 in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present invention. FIG. 2 is a cross-sectional view along the direction AA' in FIG. 1. As shown in fig. 1 and 2, the vertical cavity surface emitting laser 100 includes:
the substrate 101, a mesa 111 and a channel 110, the mesa 111 is formed on the substrate 101 and includes a light emitting hole 113, and further includes: a first ohmic contact layer 102 and an epitaxial structure 112; a first ohmic contact layer 102 is formed on the substrate 101; an epitaxial structure 112 is formed on the first ohmic contact layer 102; the epitaxial structure 112 includes a first reflective layer 103, at least two active layers, and a second reflective layer 107, the first reflective layer 103 being formed on the first ohmic contact layer 102, the at least two active layers being formed on the first reflective layer 103, a tunnel junction 105 being disposed between the at least two active layers, the second reflective layer 107 being formed on the at least two active layers;
a second ohmic contact layer 108, the second ohmic contact layer 108 being formed on a mesa structure 111;
a first electrode layer 109, the first electrode layer 109 being formed on the second ohmic contact layer 108;
the mesa structure 111 is a regular polygon structure, the light emitting holes 113 are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the trench are equal, and the inner angle of the regular polygon is divided by 360.
Taking two active layers as an example for detailed description, as shown in fig. 2, a first ohmic contact layer 102 is formed on a substrate 101, an epitaxial structure 112 is formed on the first ohmic contact layer 102, a second ohmic contact layer 108 is formed on the epitaxial structure 112, and a first electrode layer 109 is formed on the second ohmic contact layer 108, where the first electrode layer 109 is used for connecting a pad electrode.
The substrate 101 may be any semi-insulating material suitable for forming a vertical cavity surface emitting laser, and the substrate 101 is, for example, a semi-insulating GaAs substrate which is a GaAs substrate not doped with impurities and has a very high resistance. The semi-insulating GaAs substrate has a resistivity of 107. omega. cm or more. In some embodiments, a conductive substrate or an insulating substrate may also be used instead of the semi-insulating substrate. In this case, the laser array may be formed on a GaAs substrate, separated from the GaAs substrate, and then bonded to a substrate having high thermal conductivity such as an insulating AlN substrate or a conductive Cu substrate, and the substrate 101 may be an N-type substrate.
The first ohmic contact layer 102 is an N-type doped layer with a high concentration to form an ohmic contact layer, and the first ohmic contact layer 102 may be formed by chemical vapor deposition. The second ohmic contact layer 108 has a higher concentration of P-type doped layer to form a second ohmic contact layer, which may be a P-type doped ohmic contact layer, so as to reduce the contact resistance of the ohmic contact between the first electrode layer 109 and the second ohmic contact layer 108. The second ohmic contact layer 108 may be formed by chemical vapor deposition.
It should be noted that, as shown in fig. 2, the epitaxial structure 112 includes a first reflective layer 103, a first active layer 104, a tunnel junction 105, a second active layer 106, and a second reflective layer 107, wherein the first reflective layer 103 is formed on the first ohmic contact layer 102, the first active layer 104 is formed on the first reflective layer 103, the tunnel junction 105 is formed on the first active layer 104, the second active layer 106 is formed on the tunnel junction 105, and the second reflective layer 107 is formed on the second active layer 106.
The first reflective layer 103 may be formed by stacking two materials having different refractive indexes, including AlGaAs and GaAs, or AlGaAs having a high aluminum composition and AlGaAs having a low aluminum composition, for example, the first reflective layer 103 may be an N-type mirror, and the first reflective layer 103 may be an N-type bragg mirror. Each of the first active layer 104 and the second active layer 106 includes a quantum well composite structure formed by stacking layers of GaAs and AlGaAs or InGaAs and AlGaAs materials for converting electrical energy into optical energy. The second reflective layer 107 may include a stack of two materials having different refractive indexes, i.e., AlGaAs and GaAs, or AlGaAs of a high aluminum composition and AlGaAs of a low aluminum composition, the second reflective layer 107 may be a P-type mirror, and the second reflective layer 107 may be a P-type bragg mirror. The first reflective layer 103 and the second reflective layer 107 are used for reflection enhancement of light generated by the active layer and then emitted from the surface of the second reflective layer 107.
The first reflective layer 103 and the second reflective layer 107 comprise a series of alternating layers of materials of different refractive indices, wherein the effective optical thickness of each alternating layer (the thickness of the layer times the refractive index of the layer) is an odd integer multiple of the operating wavelength of a quarter of the VCSEL, i.e., the effective optical thickness of each alternating layer is an odd integer multiple of a quarter of the operating wavelength of the VCSEL. Suitable dielectric materials for forming the alternating layers of the first reflective layer 103 or the second reflective layer 107 include tantalum oxide, titanium oxide, aluminum oxide, titanium nitride, silicon nitride, and the like. Suitable semiconducting materials for forming the alternating layers of the first reflective layer 103 or the second reflective layer 107 include gallium nitride, aluminum nitride, and aluminum gallium nitride. However, in some embodiments, the first reflective layer 103 and the second reflective layer 107 may be formed of other materials.
As shown in fig. 2 and 3, a tunnel node 105 is further disposed between the first active layer 104 and the second active layer 106, the tunnel node 105 may be, for example, a GaAs homogenous tunnel node, the tunnel node 105 may be composed of an N-type layer 1051 and a P-type layer 1052, and the N-type layer 1051 is disposed on the P-type layer 1052. The thickness of the N-type layer 1051 and the P-type layer 1052 may be, for example, 10-20nm, absorption loss of photons may be reduced by using an ultra-thin layer of tunnel junctions 105, and the tunnel junctions 105 may be placed at the standing wave nodes of the optical cavity of the vcsel, which may reduce the interaction between the tunnel junctions 105 and the optical field and also reduce the loss. In the present embodiment, the tunnel junction 105 is located between the active layers, so that the first active layer 104 and the second active layer 106 form a series structure, and thus carriers can be recycled, thereby improving the light intensity of each vertical cavity surface emitting laser without increasing the current.
Optionally, the first active layer 104 and the second active layer 106 each include a first semiconductor layer, an active region, and a second semiconductor layer, the active region being disposed between the first semiconductor layer and the second semiconductor layer.
Taking the first active layer 104 as an example, as shown in fig. 4, the first active layer 104 includes a first semiconductor layer 1041, an active region 1042 and a second semiconductor layer 1043, the active region 1042 is disposed between the first semiconductor layer 1041 and the second semiconductor layer 1043, wherein the first semiconductor layer 1041 is an N-type semiconductor layer, and the second semiconductor layer 1043 is a P-type semiconductor layer. The second semiconductor layer 1043 is adjacent to the first reflective layer 103, and the first semiconductor layer 1041 is adjacent to the P-type layer of the tunnel junction 105.
Optionally, the mesa structure further includes a current confinement layer in one of the first reflective layer 103, the second reflective layer 107, or the active layer, for defining the light emitting hole.
Note that the first reflective layer 103 includes at least one AlGaAs layer with the highest Al composition content as a current confinement layer for subsequent wet oxidation, or the active layer includes at least one AlGaAs layer with the highest Al composition content as a current confinement layer for subsequent wet oxidation, or the second reflective layer 107 includes at least one AlGaAs layer with the highest Al composition content as a current confinement layer for subsequent wet oxidation. That is, the current confinement layer may be in any one of the first reflective layer 103, the second reflective layer 107, or the active layer.
In other embodiments, as shown in fig. 5, the active layer may be three layers, i.e., the first active layer 104, the second active layer 106, and the third active layer 115, and the tunnel junction may be two, i.e., the first tunnel junction 105 and the second tunnel junction 114. Through the arrangement of the tunnel sections, current carriers can be repeatedly utilized, and therefore the light emitting intensity of each vertical cavity surface emitting laser is improved on the premise that the current is not improved. The arrangement of the first tunnel junction 105 and the second tunnel junction 114, which is equivalent to three lasers connected in series, further increases the output power at the same input current compared to two active layers.
The mesa structure 111 is a regular polygon structure, the light emitting holes 113 are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes 113 to the edges of the trench are equal, and the inner angle of the regular polygon is divided by 360. Therefore, the inner angle of the regular polygon is divided by 360, the mesa structures 111 can be spliced seamlessly without leaving blank areas, and the filling rate of the vertical cavity surface emitting laser on the laser chip is further improved.
Therefore, through setting up the tunnel section and setting up the shape into regular polygon, and regular polygon's interior angle can be divided by 360 wholes, can not leave the blank region when not only vertical cavity surface emitting laser concatenation, promote the filling rate of vertical cavity surface emitting laser on the laser chip, through the setting of tunnel section moreover for the current carrier can reuse, thereby improve the luminous intensity of each vertical cavity surface emitting laser under the prerequisite that does not improve the electric current, with the luminous energy that realizes increasing substantially in the unit area.
Alternatively, as shown in fig. 6, the regular polygon structure is a regular triangle structure, and the regular polygon light emitting holes are regular triangle light emitting holes. Wherein, the widths H3, H4 and H5 of the edge of the regular triangle light emitting hole from the edge of the channel are all equal.
Alternatively, as shown in fig. 1, the regular polygon structure is a square structure, and the regular polygon light emitting holes are square light emitting holes. Wherein, the widths H1 and H2 of the edge of the square light emitting hole from the edge of the channel are equal.
Alternatively, as shown in fig. 7, the regular polygonal structure is a regular hexagonal structure, and the regular polygonal light emitting hole is a regular hexagonal light emitting hole. The widths H6, H7, H8, H9, H10 and H11 of the edges of the regular hexagonal light emitting holes from the edges of the channels are all equal.
Fig. 8 is a schematic structural diagram of a laser chip according to an embodiment of the present invention. Fig. 9 is a schematic structural diagram of a laser chip according to an embodiment of the present invention. Fig. 10 is a schematic structural diagram of a laser chip according to another embodiment of the present invention. As shown in fig. 2, 8 to 10, the laser chip 200 includes:
a plurality of lasers 100 arranged, each laser 100 comprising:
the substrate 101, a mesa 111 and a channel 110, the mesa 111 is formed on the substrate 101 and includes a light emitting hole 113, and further includes: a first ohmic contact layer 102 and an epitaxial structure 112; a first ohmic contact layer 102 is formed on the substrate 101; an epitaxial structure 112 is formed on the first ohmic contact layer 102; the epitaxial structure 112 includes a first reflective layer 103, at least two active layers, and a second reflective layer 107, the first reflective layer 103 being formed on the first ohmic contact layer 102, the at least two active layers being formed on the first reflective layer 103, a tunnel junction 105 being disposed between the at least two active layers, the second reflective layer 107 being formed on the at least two active layers;
a second ohmic contact layer 108, the second ohmic contact layer 108 being formed on a mesa structure 111;
a first electrode layer 109, the first electrode layer 109 being formed on the second ohmic contact layer 108;
the mesa structure 111 is a regular polygon structure, the light emitting holes 113 are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the trench are equal, and the inner angle of the regular polygon is divided by 360. The specific structure of the laser 100 has been explained in detail in the foregoing examples, and is not described here.
Optionally, two adjacent mesa structures share a channel therebetween.
The vertical cavity surface emitting lasers 100 are disposed on the square laser chip 200, and a channel can be shared between the vertical cavity surface emitting lasers 100 to reduce the space between the vertical cavity surface emitting lasers 100, and further increase the occupied area ratio of the light emitting holes of the vertical cavity surface emitting lasers 100, thereby increasing the effective light emitting area ratio of the laser chip 200.
As shown in fig. 8, when the vcsel 100 is an equilateral triangle, the apexes of the six triangles can be concentrated at one point, such as point B in fig. 8, and although the vcsel 100 cannot be filled in some places at the boundary portion of the laser chip 200, the middle margin area caused by, for example, a circular vcsel, is reduced in the center area, thereby increasing the filling ratio of the vcsel 100 into the laser chip 200. Similarly, as shown in FIG. 9, when the VCSEL 100 is a regular hexagon, the vertices of the three hexagons can be clustered at a point, such as point C in FIG. 9; when the VCSEL 100 is square, as shown in FIG. 10, the apexes of the four squares may be clustered at one point, such as point D in FIG. 10. When the vertical cavity surface emitting laser 100 is a regular hexagon, a square, or a regular triangle, the filling ratio of the vertical cavity surface emitting laser 100 to the laser chip 200 can be increased. In order to increase the filling rate, in the actual operation process, the size of the laser chip and the size of the vertical cavity surface emitting laser can be designed so that the filling area ratio of the vertical cavity surface emitting laser is maximum and the edge white space ratio is minimum.
Fig. 11 is a schematic structural diagram of a laser emitting module according to an embodiment of the present invention. As shown in fig. 11, the laser emitting module 300 includes a laser chip 200;
further comprising: the laser chip packaging structure comprises a substrate 301, a diffusion sheet 303 and support columns 302, wherein the laser chip 200 is arranged on the substrate 301, the support columns 302 are arranged on the substrate 301, and the diffusion sheet 303 is arranged on the support columns 302 and used for diffusing laser spots emitted by the laser chip 200.
The substrate 301 may be a double-layer or multi-layer ceramic substrate, the substrate 301 may also be made of other PCB materials such as epoxy resin, and the diffusion sheet 303 may be made of a resin material, a glass material, quartz or organic glass material, wherein a driving circuit (not shown in the figure) for driving the laser chip 200 to emit laser may be disposed on the substrate 301, the driving circuit drives the laser chip 200 to emit light, and the diffusion sheet 303 diffuses light spots of the laser chip 200 to improve the shape of far-field light spots.
Fig. 12 is a graph of the effective filling ratio of a laser chip as a function of the aperture of a circular hole according to an embodiment of the present invention. Wherein, the optimal designed oxide aperture of the single-section vertical cavity surface emitting laser is limited within 20 microns, and the effective filling proportion is less than 25 percent. The effective filling proportion refers to the ratio of the sum of the areas of the light emitting holes of all the light emitting units in the laser chip to the total area of the light emitting areas of the laser chip.
Fig. 13 is a graph of the effective fill fraction of a laser chip as a function of the size of the laser chip of fig. 1 in accordance with an embodiment of the present invention. The 1 st curve is a filling proportion curve with the side length of the vertical cavity surface emitting laser being 12 micrometers, the 2 nd curve is a filling proportion curve with the side length of the vertical cavity surface emitting laser being 10 micrometers, the 3 rd curve is a filling proportion curve with the side length of the vertical cavity surface emitting laser being 8 micrometers, and the 4 th curve is a filling proportion curve with the side length of the vertical cavity surface emitting laser being 6 micrometers.
In summary, according to the vertical cavity surface emitting laser, the laser chip and the laser emitting module provided in the embodiments of the present invention, the vertical cavity surface emitting laser includes a substrate, a mesa structure and a trench, the mesa structure is formed on the substrate and includes a light emitting hole, and the vertical cavity surface emitting laser further includes: a first ohmic contact layer and an epitaxial structure; a first ohmic contact layer formed on the substrate; an epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the substrate, the at least two active layers are formed on the first reflecting layer, a tunnel junction is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers; a second ohmic contact layer formed on the at least one mesa structure; a first electrode layer formed on the second ohmic contact layer; wherein, at least one type structure is regular polygon structure, and the light-emitting hole is corresponding regular polygon light-emitting hole, and the edge of light-emitting hole is equal apart from the distance of channel edge, and wherein, regular polygon's interior angle is divided by 360 integer. Therefore, when the vertical cavity surface emitting lasers are arranged, the vertical cavity surface emitting lasers can be seamlessly spliced, the phenomenon that the space is wasted due to the fact that the vertical cavity surface emitting lasers are left blank is avoided, and then the filling rate of the vertical cavity surface emitting lasers on the laser chip is increased. In addition, due to the addition of the tunnel sections, a plurality of active layers form a series structure, so that current carriers can be repeatedly utilized, and the light emitting intensity of each vertical cavity surface emitting laser is improved on the premise of not improving the current. Further, the light emission energy per unit area is greatly improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A vertical cavity surface emitting laser, comprising:
the mesa structure forms on the substrate and includes a luminescence hole, still includes: a first ohmic contact layer and an epitaxial structure; the first ohmic contact layer is formed on the substrate; the epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the first ohmic contact layer, the at least two active layers are formed on the first reflecting layer, a tunnel junction is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers;
a second ohmic contact layer formed on the at least one mesa structure;
a first electrode layer formed on the second ohmic contact layer;
the table structure is a regular polygon structure, the light emitting holes are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the channel are equal, and the inner angle of the regular polygon is divided by 360.
2. A vertical cavity surface emitting laser according to claim 1, wherein said regular polygon structure is a regular triangle structure, and said regular polygon light emitting holes are regular triangle light emitting holes.
3. A vertical cavity surface emitting laser according to claim 1, wherein said regular polygon structure is a square structure, and said regular polygon light emitting holes are square light emitting holes.
4. A vertical cavity surface emitting laser according to claim 1, wherein said regular polygonal structure is a regular hexagonal structure, and said regular polygonal light emitting hole is a regular hexagonal light emitting hole.
5. A vertical cavity surface emitting laser according to claim 1, wherein said active layer includes a first semiconductor layer, an active region and a second semiconductor layer, said active region being disposed between said first and second semiconductor layers.
6. A vertical cavity surface emitting laser according to claim 1, wherein said mesa structure further includes a current confinement layer in one of said first reflective layer, said second reflective layer or said active layer for defining said light emitting aperture.
7. A vertical cavity surface emitting laser according to claim 3, wherein said square light emitting hole has an effective light emitting fill ratio of 20% or more.
8. A laser chip, comprising:
a plurality of arrayed lasers, each of said lasers comprising:
the mesa structure forms on the substrate and includes a luminescence hole, still includes: a first ohmic contact layer and an epitaxial structure; the first ohmic contact layer is formed on the substrate; the epitaxial structure is formed on the first ohmic contact layer; the epitaxial structure comprises a first reflecting layer, at least two active layers and a second reflecting layer, wherein the first reflecting layer is formed on the first ohmic contact layer, the at least two active layers are formed on the first reflecting layer, a tunnel junction is arranged between the at least two active layers, and the second reflecting layer is formed on the at least two active layers;
a second ohmic contact layer formed on the at least one mesa structure;
a first electrode layer formed on the second ohmic contact layer;
the at least one structure is a regular polygon structure, the light emitting holes are corresponding regular polygon light emitting holes, the distances from the edges of the light emitting holes to the edges of the channel are equal, and the inner angle of the regular polygon is divided by 360.
9. The laser chip of claim 8, wherein two adjacent mesa structures share a channel therebetween.
10. A laser transmitter module comprising a laser chip according to claim 8 or 9;
further comprising: the laser device comprises a substrate, a diffusion sheet and support columns, wherein the laser device chip is arranged on the substrate, the support columns are arranged on the substrate, and the diffusion sheet is arranged on the support columns and used for diffusing laser spots emitted by the laser device chip.
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