CN102790354A - Vertical-cavity surface-emitting laser and production method thereof - Google Patents
Vertical-cavity surface-emitting laser and production method thereof Download PDFInfo
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- CN102790354A CN102790354A CN2012102796327A CN201210279632A CN102790354A CN 102790354 A CN102790354 A CN 102790354A CN 2012102796327 A CN2012102796327 A CN 2012102796327A CN 201210279632 A CN201210279632 A CN 201210279632A CN 102790354 A CN102790354 A CN 102790354A
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Abstract
The invention relates to a vertical-cavity surface-emitting laser and a production method thereof. The vertical-cavity surface-emitting laser comprises a negative-side (n) electrode, a gallium arsenide (GaAs) substrate, a buffering layer, an n-type distribution bragg reflection (DBR) layer, an oxidized limiting layer, an active area, a passivation layer, a positive (p)-type DBR layer and an ohm contact layer. According to the vertical-cavity surface-emitting laser and the production method thereof, the circular oxidation limiting layer is oxidized to a grate stripe shape through a given process, so that injection of isotropous current can be broken through, and the polarization control of two orthogonal polarization light is realized by injecting the anisotropic current to the active area. In addition, the vertical-cavity surface-emitting laser is simple in structure and manufacturing process, good in repeatability and easy to popularize.
Description
Technical field
The invention belongs to the Semiconductor Optic Electronics technical field, be specifically related to a kind of vertical cavity surface emitting laser and preparation method thereof.
Background technology
The high power of vertical cavity surface emitting laser, single longitudinal mode, output circular light spot, long-life are easy to two dimension characteristics such as integrated in addition; Make high-power vertical cavity surface emitting laser commercial application more and more widely, especially at field of telecommunications, laser display field, laser ignition, pumping is former and laser processing or the like.Through whole world persevering endeavors decades, it is increasing that the market of VCSEL is becoming.The high threshold current of high-power vertical cavity surface emitting laser, low shortcomings such as photoelectric conversion efficiency to well improving.For a long time, vertical-cavity-face emitting semiconductor laser (VCSEL) is in lower power levels always, makes the application of this device receive great restriction.The growth of several years up to date VCSEL materials just makes its power level begin to be greatly enhanced with Development of Preparation Technology, thereby has opened up wide prospect for the application development of VCSEL laser.Yet; Along with the VCSEL laser power constantly is improved; It is day by day urgent and important that the solution of its zlasing mode problem then becomes, because the raising of VCSEL laser power does not up to the present not only improve zlasing mode, and produces adverse influence on the basic mode obtaining.This has restricted the VCSEL laser equally and has played a role in a lot of important applied field.Therefore, when solving VCSEL laser power problem, must solve its optical mode problem and can develop and really be suitable for the high-quality VCSEL laser used, this is an important problem facing of semiconductor laser field both at home and abroad at present.And this project proposes a kind of new research ideas and methods for single this international advanced subject of transverse mode list polarization problem that solves high-power V CSEL laser just first; We can disclose the physical mechanism of VCSEL laser list transverse mode list polarization formation through the work of this project at expectation, on realization high power VCSEL laser, make a breakthrough.This has great importance aspect the application of development VCSEL laser, the particularly needed high-quality microlasers of application such as the miniature load laser ranging in solving the space exploration technology, space communication, target recognition and tracking guidance.
Since the appearance of side oxidation limiting structure, the threshold current of device, modulating speed and photoelectric conversion efficiency obtain very big improvement.Seemed the intimate perfection of this structure performance, but also there is the defective that self can't eliminate in this structure, and that is exactly in the side oxidation phenomenon that the current density at the edge of insulating barrier can be higher than the central area afterwards.Can't eliminate the overlapping phenomenon of gain of optical mode, even electric current evenly injects in that the oxidation limiting layer is perfect, most of electric current also is concentrated on the oxidation limiting layer border, mainly be because area be radius square relation.Therefore optical mode reaches maximum at the center, and such result will cause the reduction of increase, the efficient of the threshold current of aperture 10 μ m and above device to also have more serious that spatial hole burning becomes.Even the aperture narrows down to the single mode size about 3 μ m; Overlapping can improve but this defective still can not be eliminated of gaining, thus thereby diffusion has increased threshold current and the parasitic capacitance scattering of light is also enlarged accordingly in several micrometer ranges of charge carrier outside the small-bore.
Summary of the invention
The present invention is directed to vertical cavity surface emitting laser of the prior art and have the shortcoming of polarization switch effect; Propose a kind ofly to need not the side oxidation and need not etched mesa; Can solve that the overlapping defective of gain and can impressed current linear of optical mode injects, vertical cavity surface emitting laser and preparation method thereof.
For realizing above-mentioned purpose, the technical scheme of vertical cavity surface emitting laser of the present invention and preparation method thereof is specific as follows:
A kind of vertical cavity surface emitting laser from top to bottom is followed successively by: substrate, resilient coating, N type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer;
What the charge carrier in the said oxidation limiting layer injected the aperture is shaped as the spaced grating fringe shape of transparent area and light tight district.
In the technique scheme, the grating fringe width that said charge carrier injects the aperture is 0.5-1.5 μ m.
In the technique scheme, said active area comprises: space layer and active region.
In the technique scheme, said oxidation limiting layer is the AlAs layer.
In the technique scheme, the outside of said active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer, being equipped with thickness is the AlN passivation layer of 100～250nm.
The manufacture method of the vertical cavity surface emitting laser described in the technique scheme, the formation of the oxidation limiting layer of this vertical cavity surface emitting laser may further comprise the steps:
Step I: go out the oxidation limiting layer through photoetching formation;
Step I i: silicon dioxide thin film growth above said oxidation limiting layer is lithographically the grating fringe shape with it then;
Step I ii: said oxidation limiting layer is carried out oxidation, and the charge carrier that forms the grating fringe shape injects the aperture;
Step I v: get rid of the said silica membrane that forms among the step I i.
In the technique scheme, the oxidation depth that among the said step I ii said circular oxidation limiting layer is carried out oxidation is the thickness of said oxidation limiting layer.
In the technique scheme, among the said step I i, the thickness of silicon dioxide thin film growth is 50～250nm above said circular oxidation limiting layer.
The beneficial effect of vertical cavity surface emitting laser of the present invention and preparation method thereof is:
Vertical cavity surface emitting laser of the present invention and preparation method thereof; Through changing the oxidation limiting layer structure of traditional annular; Be oxidized to the grating fringe shape to circular oxide layer; The ability impressed current is injected into the mode of active area, reaches the non-homogeneous injection of electric current, and then realizes the Polarization Control of two mutually orthogonal polarised lights.The mode that this electric current injects can effectively be eliminated the polarization switch effect that occurs because of mode competition that the isotropism electric current injects two crossed polarized lights bringing.
Vertical cavity surface emitting laser of the present invention need not the side oxidation, need not etched mesa, only needs to make small electrode at the P face.
In addition, simple and direct, the good reproducibility of vertical-cavity surface emitting laser structure manufacturing process of the present invention is promoted easily.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of vertical cavity surface emitting laser of the present invention.
Fig. 2 is the electric current distribution curve synoptic diagram on the VCSEL active area of the prior art.
Fig. 3 is the electric current distribution curve synoptic diagram on the VCSEL active area of the present invention.
Reference numeral among the figure is expressed as:
1-N face electrode; The 2-substrate; The 3-resilient coating; 4-N type distribution Bragg reflector group; 5-oxidation limiting layer; 61,62-space layer; The 7-active region; The 8-passivation layer; 9-P type distribution Bragg reflector group; The 10-ohmic contact layer; 11-P face electrode.
Embodiment
The invention thought of vertical cavity surface emitting laser of the present invention and preparation method thereof is:
Vertical cavity surface emitting laser of the present invention from top to bottom is followed successively by: substrate, resilient coating, N type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer; What the charge carrier in the said oxidation limiting layer injected the aperture is shaped as the spaced grating fringe shape of transparent area and light tight district.
The manufacture method of vertical cavity surface emitting laser of the present invention, the formation of the oxidation limiting layer of this vertical cavity surface emitting laser may further comprise the steps:
Step I: go out the oxidation limiting layer through photoetching formation;
Step I i: silicon dioxide thin film growth above said oxidation limiting layer is lithographically the grating fringe shape with it then;
Step I ii: said oxidation limiting layer is carried out oxidation, and the charge carrier that forms the grating fringe shape injects the aperture;
Step I v: get rid of the said silica membrane that forms among the step I i.
Can know by foregoing; Vertical cavity surface emitting laser of the present invention and preparation method thereof; Through changing the oxidation limiting layer structure of traditional annular, be oxidized to the grating fringe shape to circular oxide layer, the ability impressed current is injected into the mode of active area; Reach the non-homogeneous injection of electric current, and then realize the Polarization Control of two mutually orthogonal polarised lights.The mode that this electric current injects can effectively be eliminated the polarization switch effect that occurs because of mode competition that the isotropism electric current injects two crossed polarized lights bringing.Vertical cavity surface emitting laser of the present invention need not the side oxidation, need not etched mesa, only needs to make small electrode at the P face.In addition, simple and direct, the good reproducibility of vertical-cavity surface emitting laser structure manufacturing process of the present invention is promoted easily.
Below in conjunction with accompanying drawing the embodiment of vertical cavity surface emitting laser of the present invention and preparation method thereof is done further to describe in detail.
Fig. 1 has shown a kind of embodiment of vertical cavity surface emitting laser of the present invention and preparation method thereof.
The device architecture main body VCSEL of vertical cavity surface emitting laser of the present invention is formed by MOCVD one secondary growth, and concrete structure from top to bottom is respectively: N face electrode 1, substrate 2, resilient coating 3, N type distribution Bragg reflector group 4, active area (comprising space layer 61, active region 7 and space layer 62), oxidation limiting layer 5, P type distribution Bragg reflector group and ohmic contact layer 9, ohmic contact layer 10 and p side electrode 11.Wherein, what the charge carriers in the said oxidation limiting layer 5 injected the aperture is shaped as the spaced grating fringe shape of transparent area and light tight district, and the grating fringe width is 0.5-1.5 μ m.
The manufacture method of vertical cavity surface emitting laser of the present invention may further comprise the steps:
1. epitaxial wafer cleans: in the VCSELs technical process, the cleaning process of epitaxial wafer is the simplest but also be most important link simultaneously in the VCSELs element manufacturing, and it is along with each step of device making technics.What pay particular attention to during cleaning is to cause damage to the epitaxial wafer surface texture, avoid very dark cut occurring as far as possible, otherwise later stage meeting intractable, the chip surface that has cleaned should bright, level and smooth, free from admixture pollution.Through repeatedly repeated experiments research, we sum up one and overlap the cleaning method of epitaxial wafer efficiently, have adopted the water-bath cleaning before the photoetching, and wiping adopted acid, alkali weak solution to remove oxide on surface film etc. before growing optics film and metal electrode.Our normally used reagent has carbon tetrachloride in the laboratory, trichloroethylene, acetone, ethanol, alkene hydrochloric acid, ammoniacal liquor or the like.
2. epitaxial surface growthing silica; The thickness of growthing silica is 50～250nm; Too thick in the process of heating, rupture easily, approached very much then in the oxidizing process of oxidation limiting layer easily generation steam and leaked into the aluminium arsenide surface through silicon dioxide the result is caused bad consequence easily.
3. using reactive ion beam etching (RIBE) is the grating of 0.5～1.5 micron (μ m) with the silicon dioxide cycle of being etched into, and etching depth is for run through fully.
4. jin carries out the oxidation grating in accurate oxidation furnace, and oxidation depth and side oxidation depth are the thickness of aluminium arsenide, and it is too many to surpass aluminium arsenide thickness scarcely, in case the charge carrier injection efficiency is too low, influences luminous power.
5. erode silicon dioxide, in experimenting, we find out that, and hydrogen fluoride also has corrosiveness to aluminium arsenide, so we will try one's best in corrode silicon dioxide and reduce the proportioning of corrosive liquid, and the corrosive liquid of low concentration can reduce the corrosive effect of aluminium arsenide.
6. secondary epitaxy carries out the growth of secondary epitaxy material, continued growth P-DBRs (P type distribution Bragg reflector group 9) and cap rock after the careful clean surface.
7. attenuate: adopt the method for mechanical reduction, be thinned to 350～450 μ m to epitaxial wafer for the first time, so that the photoetching of back; Develop, baking will be avoided the scuffing to the epitaxial wafer surface in the thinning process; If very dark cut occurs, be difficult to remove, can influence the performance of device.We adopt UNIPOL-802 type precise grinding polisher, use white alundum powder, in thinning process, will adjust the evenness of polishing machine repeatedly, help the planarization and the consistency of epitaxial wafer like this, through the scope of the epitaxial wafer evenness behind the attenuate at ± 10 μ m.
8. photoetching: adopt ultraviolet contact exposure machine; With the figure transfer on the photolithography plate to epitaxial wafer; To make full use of the part that epitaxial wafer has structure during photoetching for the first time, with the figure of photolithography plate being carved on the chip as much as possible, after photoetching is intact; The pattern that obtains cleaning is best, over-exposed or under-exposed all can be very big to the second time photoetching influence of back.
9. wet etched-mesa: under the protection of photoresist, use glacial acetic acid, hydrobromic acid; The mixed solution of potassium bichromate perhaps uses phosphoric acid, hydrogen peroxide solution, and the mixed solution of water carries out wet etching; Etch into and just in time just exposed high aluminium lamination and get final product, so that carry out the wet method selective oxidation.Find that through experiment " whipping " phenomenon can appear in the table top that first kind of mixed solution corrodes; Be unfavorable for electric current restriction and the some optical confinement of oxide layer to device; And second kind of intact table top of solution corrosion presents the rhombus table top; This is because selective corrosion is relevant, and is particularly evident for the minor diameter single tube.The epitaxial wafer that corrodes table top will clean completely, prepares wet oxidation.
10. large tracts of land reactive sputtering AlN dielectric film: in order to prevent device short circuit when the welding, the thickness of AlN closes important, and control growing thickness is 100～250nm.When thinner thickness, there is pin hole easily, can produce leakage current during welding, if surface stress is bigger when AlN is thicker, the Ohm contact electrode on surface is prone to come off during alloy.The AlN dielectric film of growth even compact helps the performance that device improves device, prolongs the life-span of device.All be to take SiO2 to do passivation insulation in the past on our technology,, had a strong impact on the heat dispersion, the particularly heat dispersion of high power VCSEL of VCSEL, and then can make device efficiency reduce power reduction, the lost of life because the thermal conductivity of SiO2 is too low.
11. secondary attenuated polishing: in order to reduce substrate to the scattering of light loss; Epitaxial wafer is carried out the attenuate second time; Thickness is reduced to 120～170 μ m; Use silica suspension to polish then, the surface energy of level and smooth light reduces the surface scattering loss of device, helps restriction diffusion wet etching and makes lenticule.
12.N face is made electrode: the photoresist preparation in that lenticular surface by utilizing is dissimilar is trapezoidal; Utilize DM-450A type vacuum coating machine equipment thermal evaporation Ge-Au-Ni-Au then; The trapezoidal quality of falling directly can influence the shape of light-emitting window, and is high-quality trapezoidal in order to obtain, and selects suitable photoresist most important; After photoetching is intact, sample was placed in the baking oven post bake 40 minutes, exactly in order to keep down trapezoidal integrality.
13. alloy: the epitaxial wafer that will make N face electrode is placed on the gold layer of peeling off window in the acetone, and window is exposed, and is put into then in the RTP-500 rapid thermal process apparatus alloy 60 seconds.
14. chip cleavage encapsulation: with the chip cleavage, adopt the P face fall the mode of encapsulation be welded on oxygen-free copper heat sink on.On N face electrode, utilize the gold wire bonder lead-in wire, be encapsulated into TO-3.
The inhomogeneities of the CURRENT DISTRIBUTION that causes in order to study the inhomogeneities that electric current that grating introduces injects, (comsol multiphysic) carries out the sunykatuib analysis electric current distribution through the multiple physical field finite element analysis software.Fig. 3 is the electric current distribution curve on the active area.Fig. 2 is the electric current distribution curve on the common VCSEL active area that does not have an optical grating construction of the prior art.
Obviously, the foregoing description only be for explanation clearly done for example, and be not qualification to execution mode.For the those of ordinary skill in affiliated field, on the basis of above-mentioned explanation, can also make other multi-form variation or change.Here need not also can't give exhaustive to all execution modes.And conspicuous variation of being extended out thus or change still are among the protection range of the invention.
Claims (8)
1. a vertical cavity surface emitting laser from top to bottom is followed successively by: substrate, resilient coating, N type distribution Bragg reflector group, active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer; It is characterized in that,
What the charge carrier in the said oxidation limiting layer injected the aperture is shaped as the spaced grating fringe shape of transparent area and light tight district.
2. vertical cavity surface emitting laser according to claim 1 is characterized in that, the grating fringe width that said charge carrier injects the aperture is 0.5-1.5 μ m.
3. vertical cavity surface emitting laser according to claim 1 and 2 is characterized in that, said active area comprises: space layer and active region.
4. vertical cavity surface emitting laser according to claim 1 and 2 is characterized in that, said oxidation limiting layer is the AlAs layer.
5. vertical cavity surface emitting laser according to claim 1 and 2 is characterized in that, the outside of said active area, oxidation limiting layer, P type distribution Bragg reflector group and ohmic contact layer, and being equipped with thickness is the AlN passivation layer of 100～250nm.
6. the manufacture method of the described vertical cavity surface emitting laser of claim 1 is characterized in that, the formation of the oxidation limiting layer of this vertical cavity surface emitting laser may further comprise the steps:
Step I: go out the oxidation limiting layer through photoetching formation;
Step I i: silicon dioxide thin film growth above said oxidation limiting layer is lithographically the grating fringe shape with it then;
Step I ii: said oxidation limiting layer is carried out oxidation, and the charge carrier that forms the grating fringe shape injects the aperture;
Step I v: get rid of the said silica membrane that forms among the step I i.
7. manufacture method according to claim 6 is characterized in that, the oxidation depth that among the said step I ii said circular oxidation limiting layer is carried out oxidation is the thickness of said oxidation limiting layer.
8. according to claim 6 or 7 described manufacture methods, it is characterized in that among the said step I i, the thickness of silicon dioxide thin film growth is 50～250nm above said circular oxidation limiting layer.
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Cited By (7)
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| CN104319627A (en) * | 2014-10-24 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | Second-order optical grating coherent vertical-cavity surface-emitting semiconductor laser device |
| CN104319628A (en) * | 2014-10-24 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | External cavity coherent vertical cavity surface emitting semiconductor laser |
| CN106654856A (en) * | 2017-02-28 | 2017-05-10 | 武汉光迅科技股份有限公司 | Perpendicular cavity surface laser and manufacturing method therefor |
| CN108847573A (en) * | 2018-06-27 | 2018-11-20 | 湖北光安伦科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN112993750A (en) * | 2021-01-28 | 2021-06-18 | 华芯半导体科技有限公司 | VCSEL chip, preparation method thereof and laser scanning radar |
| CN113540971A (en) * | 2021-07-16 | 2021-10-22 | 中科启迪光电子科技(广州)有限公司 | Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure |
| CN113644546A (en) * | 2020-09-02 | 2021-11-12 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104319627A (en) * | 2014-10-24 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | Second-order optical grating coherent vertical-cavity surface-emitting semiconductor laser device |
| CN104319628A (en) * | 2014-10-24 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | External cavity coherent vertical cavity surface emitting semiconductor laser |
| CN104319628B (en) * | 2014-10-24 | 2018-04-27 | 中国科学院长春光学精密机械与物理研究所 | Outer cavity coherent vertical-cavity-face emitting semiconductor laser |
| CN106654856A (en) * | 2017-02-28 | 2017-05-10 | 武汉光迅科技股份有限公司 | Perpendicular cavity surface laser and manufacturing method therefor |
| CN106654856B (en) * | 2017-02-28 | 2020-06-30 | 武汉光迅科技股份有限公司 | Vertical cavity surface laser and manufacturing method thereof |
| CN108847573A (en) * | 2018-06-27 | 2018-11-20 | 湖北光安伦科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN113644546A (en) * | 2020-09-02 | 2021-11-12 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN113644546B (en) * | 2020-09-02 | 2022-06-10 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN112993750A (en) * | 2021-01-28 | 2021-06-18 | 华芯半导体科技有限公司 | VCSEL chip, preparation method thereof and laser scanning radar |
| CN113540971A (en) * | 2021-07-16 | 2021-10-22 | 中科启迪光电子科技(广州)有限公司 | Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure |
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