CN101764353B - Micro-nano semiconductor edge emission fp laser and manufacturing method thereof - Google Patents
Micro-nano semiconductor edge emission fp laser and manufacturing method thereof Download PDFInfo
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- CN101764353B CN101764353B CN2010101019990A CN201010101999A CN101764353B CN 101764353 B CN101764353 B CN 101764353B CN 2010101019990 A CN2010101019990 A CN 2010101019990A CN 201010101999 A CN201010101999 A CN 201010101999A CN 101764353 B CN101764353 B CN 101764353B
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Abstract
The invention discloses a micro-nano semiconductor edge emission FP laser and manufacturing method thereof. The edge emission FP laser comprises an n-shape underlay (1), a lower limiting layer (2), an active layer (3), an upper limiting layer (4), a P-type ohm contact cap layer (5), a side surface insulating layer (6) and an anode-cathode layer (7) in sequence from up to down; wherein the side surface insulating layer (6) and a P-type electrode layer in the anode-cathode layer (7) are used for laterally limiting a light field, enhancing the lateral light field or the mode limitation of a cavity, reducing the laser emission threshold of the cavity, and improving the exiting efficiency of the end surface of the cavity and the output power of the laser. The invention can be used to overcome the problem of directional output of the micro-nano semiconductor laser, and is easy to analyze the FP mode exited by the laser. A laser source in opto-electronic integration can reach a nano size on a 2D direction and the integration level of opto-electronic apparatuses is improved.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device technical field, relate in particular to a kind of micro-nano semiconductor edge emission FP laser and preparation method thereof.
Background technology
Micro-nano type laser (microlaser) is the laser that is made of near the resonant cavity and the gain media of optical wavelength magnitude size.Along with the fast development of modern communication and integrated opto-electronic technology, micro-nano type laser is with a wide range of applications as low-light source, micro detector at the optics integration field.Because it is long that micro-nano type laser has a short cavity, high-quality-factor, hang down threshold value, be easy to realize advantages such as optics is integrated, cause many researcher's great interests in recent ten years.In conjunction with existing ripe semiconductor planar manufacture craft, its research obtains very big progress.
In 1992, the optical pumping microdisk laser that the people such as S.L.McCall of U.S.'s Bell Laboratory produce the earliest (S.L.McCall et al. based on the WG pattern, Whispering-gallery modemicrodisk lasers, Appl.Phys.Lett.60,289 (1992) .).By 2000, the continuous electric that Japan Yokohama T.Baba group of national university utilizes the inductively coupled plasma dry etching to produce room temperature lower threshold value electric current 40 μ A is injected and is swashed microdisk laser (the M.Fujita et al. that penetrates, Continuous wavelasing in GaInAsP microdisk injection laser with threshold current of 40uA, Electron.Lett.36, (2000) .) though isotropic little dish chamber can realize that low threshold value swashs and penetrate that its directed output is a great problem.In order to change little dish chamber isotropism, realize directed output, people put forward various plans, introduce projection (A.F.J.Levi et al. as disk border, Directionallight coupling from microdisk laser, Appl.Phys.Lett.62,561 (1993) .), straight wave guide side-coupled (S.C.Hagness et al., FDTD microcavity simulations design andexperimental realization of waveguide coupled single mode
Although above-mentioned work has realized directed output, reduced the quality factor of resonant cavity simultaneously, the threshold value of laser is raise, and efficiency is lower, practical ranges is subjected to certain restriction.Recently propose a kind of resonant cavity by circular cavity distortion called after limacon by people such as Jan Wiersig, it not only can get the effect of restriction light field, and the light field of leakage is propagated along definite direction, thereby realizes little shape laser of directed output.But the result who experimentally obtains at present is not very desirable, and as the InP/InGaAsP laser, the radius height is at 50 microns, and threshold value is near 60 milliamperes.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of micro-nano semiconductor edge emission FP laser and preparation method thereof, overcoming the problem of the directed output of micro-nano semiconductor laser, and is easy to analyze the FP pattern of laser emitting.
(2) technical scheme
For achieving the above object, the invention provides a kind of micro-nano semiconductor edge emission FP laser, this edge emission FP laser comprises n type substrate 1, lower limit layer 2, active layer 3, upper limiting layer 4, P type ohmic contact cap rock 5, side insulation layer 6 and positive and negative electrode layer 7 from the bottom to top successively, wherein to be etched to the degree of depth be 4 to 7 microns strip structure for this lower limit layer 2 and this active layer 3, and this side insulation layer 6 is SiO of deposition
2With the SiN material, this positive and negative electrode layer 7 comprises P type electrode layer and N type electrode layer, and the P type electrode layer in this side insulation layer 6 and this positive and negative electrode layer 7 is used for the lateral limitation light field, strengthen the light field or the mode confinement of chamber side direction, reduce the chamber lasing threshold, improve the power of the output of resonator end surface outgoing efficient and laser.
In the such scheme, described n type substrate 1 is n N-type semiconductor N substrate independently, or the n N-type semiconductor N combines the substrate that constitutes with any bonding among InP, GaAs, Si, sapphire, Au, Ag, the Al.
In the such scheme, described lower limit layer 2 is for being grown in or being bonded in material of the same type or the lattice matched materials on the n type substrate 1, and the material that this lower limit layer 2 adopts is III-V materials limitations layer material, II-VI material or metal material.
In the such scheme, described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
In the such scheme, described active layer 3 injects luminous semi-conducting material or luminous organic material based on electricity for being grown on the lower limit layer 2, and the material that this active area 3 adopts is InGaAsP, GaAs, InGaAs, InGaN, InAs or AlGaInAs.
In the such scheme, the tensile strain that described active layer 3 is InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN becomes quantum well or quantum dot, perhaps is compressive strain quantum well or the quantum dot of InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN.
In the such scheme, described upper limiting layer 4 comprises III-V materials limitations layer material, II-VI material or metal material for being grown in playing the light field restriction and reducing the layer of semiconductor material or the metal material of light field in the hangover effect of substrate on the active layer 3.
In the such scheme, described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
In the such scheme, GaInAsP or AlGaInAs material that described P type ohmic contact cap rock 5 mixes for the P type.
In the such scheme, the material that described P type electrode layer adopts is Ti-Au or Ti-Pt-Au alloy, and the material that described N type electrode layer adopts is the Au-Ge-Ni-Au alloy.
In the such scheme, this edge emission FP laser also comprises an optical output port, and the light output port is cleavage port or plated film port.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this micro-nano semiconductor edge emission FP laser provided by the invention, be to utilize ripe semiconductor planar manufacturing process, comprise processes such as photoetching, ICP etching, wet etching, steaming gold, make, have repeatable and compatible preferably, overcome the problem of the directed output of micro-nano semiconductor laser, and be easy to analyze the FP pattern of laser emitting.
2, this micro-nano semiconductor edge emission FP laser provided by the invention, be directly to export by the cleavage surface realization orientation of waveguide, also can by plating Mo reduce the chamber single the loss in the time, the light field delivery efficiency is higher, and width reaches below 1 micron, length makes its fine unimodular property below 20 microns.
3, this micro-nano semiconductor edge emission FP laser provided by the invention because the less easy realization optics of its size is integrated, also can provide good light source for optical interconnection system.
Description of drawings
Fig. 1 is the structural representation of this micro-nano semiconductor edge emission FP laser provided by the invention.The y coordinate direction is represented the device vertical direction among the figure; X, z coordinate direction are represented the device horizontal direction;
Fig. 2 is the vertical view of the scanning electron microscopy of this micro-nano semiconductor edge emission FP laser provided by the invention
Fig. 3 is 85K for this micro-nano semiconductor edge emission FP laser that first example of the present invention provides in temperature, and injection current is 30mA, the resulting sharp spectrogram of penetrating.
This micro-nano semiconductor edge emission FP laser that Fig. 4 provides for first example of the present invention is the power-current-voltage curve that measures under the 85K in temperature.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the structure of this micro-nano semiconductor edge emission FP laser provided by the invention, this edge emission FP laser comprises n type substrate 1, lower limit layer 2, active layer 3, upper limiting layer 4, P type ohmic contact cap rock 5, side insulation layer 6 and positive and negative electrode layer 7 from the bottom to top successively, wherein the P type electrode layer in side insulation layer 6 and the positive and negative electrode layer 7 is used for the lateral limitation light field, strengthen the light field or the mode confinement of chamber side direction, reduce the chamber lasing threshold, improve the power of the output of resonator end surface outgoing efficient and laser.
Wherein, described n type substrate 1 is n N-type semiconductor N substrate independently, or n N-type semiconductor N substrate combines the substrate that constitutes with any bonding among InP, GaAs, Si, sapphire, Au, Ag, the Al.
Described lower limit layer 2 is for being grown in or being bonded in material of the same type or the lattice matched materials on the n type substrate 1, and this lower limit layer 2 is etched to strip structure, and wherein the lower limit layer material is III-V materials limitations layer material, II-VI material or metal material.Described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
Described active layer 3 injects luminous semi-conducting material or luminous organic material based on electricity for being grown on the lower limit layer 2, equally also be etched to strip structure, wherein the material of these active area 3 employings is InGaAsP, GaAs, InGaAs, InGaN, InAs or AlGaInAs.The tensile strain that described active layer 3 is InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN becomes quantum well or quantum dot, perhaps is compressive strain quantum well or the quantum dot of InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN.
Described upper limiting layer 4 comprises III-V materials limitations layer material, II-VI material or metal material for being grown in playing the light field restriction and reducing the layer of semiconductor material or the metal material of light field in the hangover effect of substrate on the active layer 3.Described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
GaInAsP or AlGaInAs material that described P type ohmic contact cap rock 5 mixes for the P type.Described side insulation layer 6 is SiO of deposition
2With the SiN material.Described positive and negative electrode layer 7 comprises P type electrode layer and N type electrode layer, and wherein, the material that P type electrode layer adopts is Ti-Au or Ti-Pt-Au alloy, and the material that N type electrode layer adopts is the Au-Ge-Ni-Au alloy.
Further, this edge emission FP laser further comprises an optical output port, and the light output port is cleavage port or plated film port.
In addition, micro-nano semiconductor edge emission FP laser provided by the invention is that FP laser chamber width reaches nano-scale below 1 micron, length is at the laser with strip geometry below 20 microns, and the operation wavelength of this micro-nano semiconductor edge emission FP laser covers deep ultraviolet to far infrared band.
As shown in Figure 2, Fig. 2 is the vertical view of the scanning electron microscopy of this micro-nano semiconductor edge emission FP laser provided by the invention.
Based on the described this micro-nano semiconductor edge emission FP laser of Fig. 1, Fig. 2, this micro-nano semiconductor edge emission FP laser provided by the invention is described in further detail below in conjunction with specific embodiment.
The operation wavelength of this micro-nano semiconductor edge emission FP laser is 1430.55nm in the present embodiment.The vertical view of the micro-nano semiconductor edge emission FP laser scanning electron microscopy of this example as shown in Figure 2.
The following p electrode of this example is Ti-Au or Ti-Pt-Au alloy, and the side insulation layer is the SiO of deposition
2With the SiN material, p type ohmic contact cap rock is the GaInAsP that the P type mixes, the AlGaInAs material, upper limiting layer is long playing the light field restriction and reducing layer of semiconductor material or the metal material of light field in the hangover effect of substrate on active layer, comprising III-V materials limitations layer material InP, AlAs, AlGaAs, AlGaN, GaN, II-VI material ZnO and metal material Au, Al, Ag, active layer is to be grown in to inject luminous semi-conducting material or luminous organic material based on electricity above the lower limit layer, equally also is etched to strip structure, wherein active area materials InGaAsP, GaAs, InGaAs, InGaN, InAs, the AlGaInAs material, lower limit layer is same material or the lattice matched materials that is grown in or is bonded on the substrate, and lower limit layer the first half is etched to strip structure, and wherein the lower limit layer material is various III-V materials limitations layer material InP, AlAs, AlGaAs, AlGaN, GaN, II-VI material ZnO and metal material Au, Al, Ag, n type substrate are n N-type semiconductor N substrates or combine the substrate that constitutes with other material bonding independently, comprising InP, GaAs, Si, sapphire and metal A u, Ag, Al.
The measurement result of present embodiment as shown in Figure 3 and Figure 4.Fig. 3 is that this micro-nano semiconductor edge emission FP laser that provides according to first example of the present invention is under the 85K in temperature, and injection current is 30mA, the resulting sharp spectrogram of penetrating.Fig. 4 is to be the power-current-voltage curve that measures under the 85K in temperature according to this micro-nano semiconductor edge emission FP laser that first example of the present invention provides.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. micro-nano semiconductor edge emission FP laser, it is characterized in that, this edge emission FP laser comprises n type substrate (1), lower limit layer (2), active layer (3), upper limiting layer (4), P type ohmic contact cap rock (5), side insulation layer (6) and positive and negative electrode layer (7) from the bottom to top successively, wherein to be etched to the degree of depth be 4 to 7 microns strip structure for this lower limit layer (2) and this active layer (3), and this side insulation layer (6) is the SiO of deposition
2With the SiN material, this positive and negative electrode layer (7) comprises P type electrode layer and N type electrode layer, and the P type electrode layer in this side insulation layer (6) and this positive and negative electrode layer (7) is used for the lateral limitation light field, strengthen the light field or the mode confinement of chamber side direction, reduce the chamber lasing threshold, improve the power of the output of resonator end surface outgoing efficient and laser.
2. micro-nano semiconductor edge emission FP laser according to claim 1, it is characterized in that, described n type substrate (1) is n N-type semiconductor N substrate independently, or the n N-type semiconductor N combines the substrate that constitutes with any bonding among InP, GaAs, Si, sapphire, Au, Ag, the Al.
3. micro-nano semiconductor edge emission FP laser according to claim 1, it is characterized in that, described lower limit layer (2) is for being grown in or being bonded in material of the same type or the lattice matched materials on the n type substrate (1), and the material that this lower limit layer (2) adopts is III-V materials limitations layer material, II-VHI material or metal material.
4. micro-nano semiconductor edge emission FP laser according to claim 3 is characterized in that, described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
5. micro-nano semiconductor edge emission FP laser according to claim 1, it is characterized in that, described active layer (3) injects luminous semi-conducting material or luminous organic material based on electricity for being grown on the lower limit layer (2), and the material that this active area (3) adopts is InGaAsP, GaAs, InGaAs, InGaN, InAs or AlGaInAs.
6. micro-nano semiconductor edge emission FP laser according to claim 1, it is characterized in that, described active layer (3) is that the tensile strain of InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN becomes quantum well or quantum dot, perhaps is compressive strain quantum well or the quantum dot of InGaAsP/InGaAsP, InGaAs/GaAs, InGaAs/InGaAsP, AlGaInAs/AlGaInAs, InGaN/GaN.
7. micro-nano semiconductor edge emission FP laser according to claim 1, it is characterized in that, described upper limiting layer (4) comprises III-V materials limitations layer material, II-VI material or metal material for being grown in playing the light field restriction and reducing the layer of semiconductor material or the metal material of light field in the hangover effect of substrate on the active layer (3).
8. micro-nano semiconductor edge emission FP laser according to claim 7 is characterized in that, described III-V materials limitations layer material is InP, AlAs, AlGaAs, AlGaN or GaN, and described II-VI material is ZnO, and described metal material is Au, Al or Ag.
9. micro-nano semiconductor edge emission FP laser according to claim 1 is characterized in that, GaInAsP or AlGaInAs material that described P type ohmic contact cap rock (5) mixes for the P type.
10. micro-nano semiconductor edge emission FP laser according to claim 1 is characterized in that, the material that described P type electrode layer adopts is Ti-Au or Ti-Pt-Au alloy, and the material that described N type electrode layer adopts is the Au-Ge-Ni-Au alloy.
11. micro-nano semiconductor edge emission FP laser according to claim 1 is characterized in that, this edge emission FP laser also comprises an optical output port, and the light output port is cleavage port or plated film port.
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| CN102519910B (en) * | 2011-12-15 | 2013-09-18 | 中国科学院半导体研究所 | Optical biosensor based on two-port microcavity laser space interference |
| CN104868359B (en) * | 2015-06-08 | 2018-03-23 | 中国科学院半导体研究所 | Single mode High Speed Modulation Fabry Perot semiconductor laser based on coupler |
| CN108718030B (en) * | 2018-04-24 | 2021-07-06 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | Nitride semiconductor micro-cavity laser structure with low resistance and low thermal resistance and preparation method thereof |
| CN109193344A (en) * | 2018-10-30 | 2019-01-11 | 中国工程物理研究院应用电子学研究所 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
| CN112735946B (en) * | 2021-03-29 | 2021-06-18 | 度亘激光技术（苏州）有限公司 | Semiconductor device preparation method |
| CN113241395B (en) * | 2021-05-08 | 2022-08-16 | 西安瑞芯光通信息科技有限公司 | Quantum micro-nano structure photoelectron chip and manufacturing method thereof |
| CN115267967B (en) * | 2022-08-01 | 2024-04-05 | 浙江大学 | Method for realizing on-chip light source interconnection by strongly-limited three-dimensional photon lead waveguide |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150242A (en) * | 2006-09-22 | 2008-03-26 | 中国科学院长春光学精密机械与物理研究所 | Electric pump micro cavity laser with integrated straight wave guide output |
| CN101257189A (en) * | 2008-02-28 | 2008-09-03 | 复旦大学 | Wavelength tunable helical annular coupled micro-cavity laser |
-
2010
- 2010-01-27 CN CN2010101019990A patent/CN101764353B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150242A (en) * | 2006-09-22 | 2008-03-26 | 中国科学院长春光学精密机械与物理研究所 | Electric pump micro cavity laser with integrated straight wave guide output |
| CN101257189A (en) * | 2008-02-28 | 2008-09-03 | 复旦大学 | Wavelength tunable helical annular coupled micro-cavity laser |
Non-Patent Citations (2)
| Title |
|---|
| 任大翠等.半导体微腔激光器.《半导体光电》.1999, * |
| 韩艳玲等.微腔激光器的发展与应用.《物理与工程》.1999, * |
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