CN101471541A - Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region - Google Patents
Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region Download PDFInfo
- Publication number
- CN101471541A CN101471541A CNA2007103042542A CN200710304254A CN101471541A CN 101471541 A CN101471541 A CN 101471541A CN A2007103042542 A CNA2007103042542 A CN A2007103042542A CN 200710304254 A CN200710304254 A CN 200710304254A CN 101471541 A CN101471541 A CN 101471541A
- Authority
- CN
- China
- Prior art keywords
- layer
- laser
- inp
- quantum well
- modulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the fabrication method of a travelling-wave electroabsorption modulated laser with a laminated structure formed by selective-area growth (SAG). The fabrication method comprises the following steps: fabricating a mask strip pattern on a semi-insulating InP substrate; sequentially epitaxially growing a heavily-doped n-InP buffer layer, a 1.2Q lower confinement layer, a multi-quantum well structure of a modulator, a multi-quantum well structure of a laser, a 1.2Q upper confinement layer and an n-InP inversion layer; etching off an upper laminated multi-quantum well structure in a SAG laminated multi-quantum well structure, and a lower laminated multi-quantum well structure and the 1.2Q lower confinement layer of an optical terminal region; fabricating a grating on a large-area growth area, and etching an inversion layer to the 1.2Q upper confinement layer by the grating; and sequentially epitaxially growing a p-InP protection layer, an etching stop layer, a p-InP cover layer and a p-InGaAs layer; and etching off the p-InGaAs layer in the electrical insolation area, and implanting ions in the p-InP cover layer in the area to produce a high-impedance area.
Description
Technical field
The present invention relates to a kind of utilization and select the manufacture method of the capable ripple Electroabsorption Modulated Laser of regional extension (SAG) fabrication techniques active area laminated construction.
Background technology
Along with the development of information age, existing communication network can not satisfy the requirement of message capacity and speed, and many high speed photoelectronic devices are fallen over each other development.Use the LASER Light Source field in optical communication, traditional lump type Electroabsorption Modulated Laser is because the restriction of himself design feature, and modulation bandwidth is difficult to be greatly improved.And row ripple Electroabsorption Modulated Laser, the potentiality because its modulation bandwidth has greatly improved are becoming the main flow of communication with LASER Light Source.
One of research emphasis of row ripple Electroabsorption Modulated Laser (EML) is to design and optimizes the traveling wave electrode structure of modulator region and the device waveguiding structure that is complementary with it.For the traveling wave electrode structure, forefathers once adopted microstrip line, the line of rabbet joint, parallel wire and co-planar waveguide structures such as (CPW).But first three plants structure big defective is arranged all, Comparatively speaking, the ground wire of CPW and holding wire are positioned at same plane, and substrate need not conduct electricity, reduce lossy microwave thereby can adopt very thick semi insulating material to make substrate, the CPW structure also convenient with being connected and encapsulation of other high speed element such as K-or V-joint etc.Therefore the CPW structure is suitable for the electrode structure of row wave device most.The kind of CPW traveling wave electrode structure is a lot of at present, the main distinction is its holding wire in shape, as (PhotonicsTechnology Letters, 2002 Vol.14No.12 1647-1649) such as " it " font holding wires, but the lossy microwave of these traveling wave electrodes is bigger.
Two of the research emphasis of row ripple Electroabsorption Modulated Laser is the design and the making of integrated chip.These two kinds of materials that function difference is big, band gap wavelength is different of laser (LD) and modulator (EAM) to be linked together, should consider the problem of technology cost aspect, yet will take the performance of function each other into account.The manufacture method of bibliographical information mainly contains direct butt joint coupled method (Butt-jointmethod) (Photonics Technology Letters at present, 2001 Vol.13 No.9 954-956), select regional epitaxy (Selective-aera growth, SAG) (Semiconductor Scienceand Technology, 2007 917-920), quantum well mixing method (QuantumIntermixing) (Electronics Letters, 2005 Vol.41 No.18), dual stack Multiple Quantum Well method (Double-stack MQWs) (Photonics Technology Letters, 2002Vol.14No.12 1647-1649) etc.Making the most frequently used method of EML at present is directly to dock coupled method and select regional epitaxy.Though Butt-joint method can realize the optimization respectively of laser, modulator structure, improve the overall performance of device, this method needs repeatedly epitaxial growth, complex process, fabrication cycle is long, and cost is higher, and the coupling efficiency between laser and the modulator is not high yet.The SAG technical matters is simple relatively, and active area only needs extension one time, the coupling efficiency height, but it can not optimize the active area structure of laser, modulator respectively, and the function performance is difficult to fully up to expectations.Dual stack Multiple Quantum Well method technology is simple, active area only needs an extension, the Multiple Quantum Well of laser and modulator (MQW) structure can be optimized respectively, but laser active area performance is subjected to the influence of vertical direction modulator lamination very big, cause laser threshold current to increase, it is low that the EML device goes out luminous power.
Summary of the invention
The objective of the invention is to propose the manufacture method of the capable ripple Electroabsorption Modulated Laser of a kind of selection regional extension (SAG) fabrication techniques active area laminated construction, this method combines the MQW structure of the advantage of active area stack technology and SAG technology: LD and EAM and can optimize respectively, active area only needs extension one time, manufacture craft is simple, and the EML device threshold electric current of preparation is little, the performance height.The present invention has also designed a kind of butterfly row ripple CPW electrode at the modulator segment of EML device simultaneously, makes it to load effectively travelling wave signal, improves the modulation bandwidth of EML device.
The manufacture method of the selection zone extension lamination row ripple Electroabsorption Modulated Laser that the present invention proposes comprises:
On substrate 101, make mask strip pattern 117;
To select the superimposed layer multi-quantum pit structure 105 in regional extension (SAG) district 113～114 lamination multi-quantum pit structures and following lamination multi-quantum pit structure 104, the 1.2Q lower limit layer 103 of light end regions 113 to erode;
Make grating 108 in the large area deposition district, grating is carved trans-reflecting type layer 107 and is goed deep into 1.2Q upper limiting layer 106;
Epitaxial growth p-InP protective layer 109, etching barrier layer 110, p-InP cap rock 111 and p-InGaAs layer 112 successively;
After the p-InGaAs layer in electricity isolated region territory 15 eroded, inject and produce high resistance regions, realize that electricity isolates by carrying out ion in the p-InP cap rock in this zone.
Further, described substrate is semi-insulating InP substrate.
Further, described mask strip is wedge shape SiO
2Mask.
Further, adopt the large area deposition technology in described laser section.
Further, described multi-quantum pit structure of growing in selecting regional epitaxial process is two active area laminated construction of modulator Multiple Quantum Well and laser Multiple Quantum Well.
Further, in described laser section, the wavelength difference 〉=110nm between two active area lamination Multiple Quantum Well; Wavelength difference between modulator segment lower floor Multiple Quantum Well and the laser section upper strata Multiple Quantum Well is 40～60nm.
Further, after extension InP cap rock and p-InGaAs layer, by photoetching and the shallow ridge of wet etching etched features to trapping layer.
Further, described modulator segment and laser section all adopt the coplanar waveguide electrode structure, and modulator segment adopts coplane traveling wave electrode structure.
Further, described modulator segment travelling wave signal electrode has adopted the signal line structure of butterfly, and holding wire is done on the shallow ridge of device by polyimides bag platform, and ground wire is then done on semi-insulating substrate.
Further, described modulator segment is provided with the antireflection port.
Capable wave device among the present invention can be realized the stable output of the single longitudinal mode of high frequency modulated laser signal, and the threshold current of device is little, and the far-field characteristic of output light is good.In addition, this device architecture has fully taken into account convenience and the cost of making in design, makes this device applying from now on huge competitive advantage be arranged.
Description of drawings
Fig. 1 adopts the vertical structure schematic diagram of selecting regional extension lamination row ripple Electroabsorption Modulated Laser among the present invention;
Fig. 2 is the cross-sectional structure figure of device EAM section among the present invention;
Fig. 3 is the vertical view of device CPW electrode structure among the present invention;
Fig. 4 is the vertical structure schematic diagram of the SAG Electroabsorption Modulated Laser of Semiconductor institute, Chinese Academy of Sciences's design;
Fig. 5 is the vertical structure figure of the dual stack Multiple Quantum Well EML of people such as German Bernhard Stegmueller design.
Wherein, among Fig. 1: 101: semi-insulating InP substrate; 102: heavy doping n-InP resilient coating; 103:1.2Q lower limit layer; 104: the Multiple Quantum Well of modulator; 105: the Multiple Quantum Well of laser; 106:1.2Q upper limiting layer; The 107:n-InP inversion layer; 108: Bragg grating; The 109:p-InP protective layer; 110: etching barrier layer; The 111:p-InP cap rock; 112:p-InGaAs; 113: the light-emitting window district; 114: modulator region; 115: electricity isolated region; 116: the laser district; 117: wedge type SAG mask.
Among Fig. 2: 201: semi-insulating n-InP substrate; The ground line electrode of 202:CPW; 203: heavy doping n-InP resilient coating; 204: ohmic contact layer; 205:1.2Q lower limit layer; 206: the Multiple Quantum Well of modulator; The 207:p-InP protective layer; 208: etching barrier layer; The 209:p-InP cap rock; 210:p-InGaAs; 211: polyimides bag platform; 212: modulator traveling wave electrode (holding wire of CPW); Wr: shallow vallum is wide; Wm: dark vallum is wide.
Among Fig. 3: 301: the ground line electrode of modulator CPW; 302: the signal line electrode of modulator CPW; 303: the n electrode of laser CPW; 304: the p electrode of laser CPW; W
r: shallow vallum is wide; L
Out: the light-emitting window section length; L
EAM: modulator region length; L
Sep: electricity isolated region length; L
DFB: the laser section length.
Among Fig. 4: the 401:n-InP substrate; The 402:n-InP resilient coating; 403:1.2Q lower limit layer; 404: multiple quantum well layer; 405:1.2Q upper limiting layer; 406: Bragg grating; The 407:p-InP protective layer; 408: etching barrier layer; The 409:p-InP cap rock; 410:p-InGaAs; 411: the laser district; 412: electricity isolated region; 413: modulator region; The 414:SAG mask.
Among Fig. 5: the 501:n-InP substrate; The 502:n-InP resilient coating; 503:1.2Q lower limit layer; 504: the multiple quantum well layer of modulator; 505: the multiple quantum well layer of laser; 506:1.2Q upper limiting layer; 507: Bragg grating; The 508:p-InP protective layer; 509: etching barrier layer; The 510:p-InP cap rock; 511:p-InGaAs; 512: the laser district; 513: electricity isolated region; 514: modulator region.
Embodiment
Set forth the present invention below by above-mentioned accompanying drawing and make the process of selecting the capable ripple Electroabsorption Modulated Laser of regional extension (SAG) fabrication techniques active area laminated construction.
Fig. 1 is for adopting the vertical structure schematic diagram of selecting regional extension lamination row ripple Electroabsorption Modulated Laser among the present invention, at first on semi-insulating InP substrate, 101 make wedge-shaped medium mask strip pattern 117, then the MQW structure 105 of the MQW structure 104 of epitaxial growth heavy doping n-InP resilient coating 102,1.2Q lower limit layer 103, modulator, laser, 1.2Q upper limiting layer 106 and n-InP inversion layer 107 successively on semi-insulating InP substrate 1; With the superimposed layer MQW structure 105 (MQW of DFB) in the left side SAG district 113-114 lamination MQW structure, erode together with following lamination MQW structure 104 (MQW of EAM), the 1.2Q lower limit layer 103 of left side bright dipping end regions 113; Make grating 108 in left side large area deposition district, grating is carved trans-reflecting type layer 107 and is goed deep into 1.2Q upper limiting layer 106; After this epitaxial growth p-InP protective layer 109, etching barrier layer 110, p-InP cap rock 111 and p-InGaAs layer 112 successively; After the p-InGaAs layer in electricity isolated region territory 115 eroded, inject and produce high resistance regions, realize the purpose that electricity is isolated by carrying out ion in the p-InP cap rock in this zone.
Fig. 2 is to be the cross-sectional structure figure of device EAM section among the present invention, and layer structure of each among the figure and Fig. 1 are basic identical.By twice ridge process making at quarter ridge waveguide structure, narrower shallow ridge etches into till the etching barrier layer 208, and the dark ridge of broad will etch in the heavy doping n-InP resilient coating 203, the wide W of wherein shallow ridge
rBe 2.5 microns, the dark wide W of ridge
mIt is 6 microns; Then the ground line electrode 202 of CPW electrode is done on semi-insulating substrate 201, and on be about to heavy doping n-InP resilient coating 203 together with 204 envelopes of the ohmic contact on it, and the holding wire 212 of CPW electrode will be done on the shallow ridge of device by polyimides (PI) bag platform 211.
Fig. 3 is the vertical view of device CPW electrode structure among the present invention.The CPW electrode structure of device comprises the capable ripple CPW of the butterfly type structure 301-302 in EAM district and the common CP W structure 303-304 in DFB district.The length L of device laser section
DFBBe 300 microns, the electricity isolated region length L
SepBe 50 microns, the modulator segment length L
EAMBe 100 microns, light-emitting window section length L
OutIt is 50 microns.
Innovation part of the present invention is:
1, proposes a kind of active area lamination waveguiding structure of the SAG of employing technology, simplified device making technics, improved device performance.
Fig. 4 is the vertical structure schematic diagram of the designed SAG Electroabsorption Modulated Laser of Chinese Academy of Sciences's semiconducter research, at first on n-InP substrate 401, make medium mask strip pattern 414, then epitaxial growth n-InP resilient coating 402,1.2Q lower limit layer 403, multi-quantum pit structure 404,1.2Q upper limiting layer 405 successively on substrate 401; On the upper limiting layer 405 in left side SAG district, make grating 406; After this epitaxial growth p-InP protective layer 407, etching barrier layer 408, p-InP cap rock 409 and p-InGaAs layer 410 successively again; After the p-InGaAs layer 410 in electricity isolated region territory 412 eroded, inject and produce high resistance regions, realize the purpose that electricity is isolated by carrying out ion in the p-InP cap rock 409 in this zone.The laser section of this device is in SAG district 411, and modulator segment is in large area deposition district 413.
See Fig. 1, devices use SAG technology of the present invention grows two lamination multi-quantum pit structures (104 and 105) up and down successively on semi-insulating InP substrate 1, and upper strata and lower floor's multi-quantum pit structure correspond respectively to the active area of laser and modulator.But the laser section of entire device is not in SAG district 114, but in large area deposition district 116, and the laser of the device made from the common SAG method of the employing shown in Fig. 4 is just in time opposite with the position of modulator.
Fig. 5 is the vertical structure figure of the dual stack Multiple Quantum Well EML of people such as German Bernhard Stegmueller design.They are direct large tracts of land epitaxial growth n-InP resilient coating 2,1.2Q lower limit layer 503, the MQW structure 504 of modulator, the MQW structure 505 of laser, 1.2Q upper limiting layer 506 on n-InP substrate 1; On the upper limiting layer 506 of left side laser section 12, make grating 507 then; After this epitaxial growth p-InP protective layer 508, etching barrier layer 509, p-InP cap rock 510 and p-InGaAs layer 511 successively again; After the p-InGaAs layer 511 in electricity isolated region territory 513 eroded, inject and produce high resistance regions, realize the purpose that electricity is isolated by carrying out ion in the p-InP cap rock 510 in this zone.
See Fig. 1, in device fabrication processes of the present invention, need the upper strata mqw layer 105 in left side SAG district 114 is eroded, only stay lower floor's mqw layer 104.Therefore utilize lower floor's mqw layer 104 in SAG district, the left side 114 to make the active area of modulator, the upper strata mqw layer 105 in large area deposition district 116 is made laser active area on the right of utilizing, and this has significantly different again with dual stack Multiple Quantum Well technology common shown in Fig. 5.
Because two sections (SAG districts 114 and large area deposition districts 116) are simultaneously epitaxially grown about device of the present invention lower floor mqw layer 104, thicker than the mqw layer 104 on the right naturally at the mqw layer 104 in SAG district 114, wavelength will be grown.As long as change the width and the spacing of medium mask 117, just can make about lower floor's mqw layer 104 materials two intersegmental wavelength difference easily〉60nm (being the wavelength long 60nm of the mqw layer 104 in SAG district, the left side 114) than the mqw layer 104 in the right large area deposition district; And upper strata mqw layer 105 is the length of looking unfamiliar thereafter, can design the long 50～60nm of wavelength of lower floor's mqw layer 104 that the extension parameter has made the SAG district, wavelength ratio left side 114 of the upper strata mqw layer 5 that produces laser action easily, to satisfy the general requirement that EML works.
Therefore, in the horizontal direction, long 50～the 60nm of the wavelength of the mqw layer 4 (active area of modulator) in the SAG district, the wavelength ratio left side 114 of the upper strata mqw layer 5 (laser active area) in large area deposition district, the right 116, and the wavelength of the mqw layer 4 in left side SAG district 14 is than the long 60nm of wavelength of lower floor's mqw layer 104 in the right large area deposition district 116, thereby the vertical direction of large area deposition district laser section 116 on the right, wavelength difference 〉=110nm between the two lamination MQW structures 104 and 105 up and down, can be with between them differs from Δ E〉56meV (to the 1550nm communication wavelengths), add outside and inject under the current conditions, the laser that produces in the upper strata mqw layer 105 is significantly reduced by the probability that lower floor's mqw layer 104 absorbs, thereby can reduce the threshold current of device effectively, improve Output optical power, solve the very big problem of device threshold electric current among Fig. 5; Because this technology is to adopt laminated construction, can optimize modulator MQW and Distributed Feedback Laser MQW structure respectively: the thick increase of mqw layer 104 traps of EAM section 114, the trap number increases, to improve the extinction ratio and the modulation efficiency of device; Mqw layer 105 thin thickness of Distributed Feedback Laser section 116, the trap number is few, is beneficial to reduce threshold value and weakens non-homogeneous injection.The problem that the MQW structure of device modulator and laser can not be optimized respectively among solution Fig. 4.
In addition, the also designed wedge shape SAG mask 117 of the present invention, the introducing of taper structure can improve the butt joint interface of device laser and modulator, thereby reduces the optical absorption loss of this transitional region, sees Fig. 1.
2. designed butterfly row ripple CPW electrode structure
The device CPW electrode structure of the present invention's design is seen shown in Figure 3.The left side is the CPW electrode structure of modulator, its holding wire 302 shapes are butterfly, do on the shallow ridge in device EAM district by polyimides bag platform, and ground line electrode do on semi-insulating substrate, and on be about to heavy doping n-InP resilient coating together with the ohmic contact envelope on it; The right side is the CPW electrode structure of laser, and its p electrode 304 is directly done on the money ridge in device laser district, and the way of the way of n electrode 3 and modulator ground line electrode is similar.
Although the structure to device among the present invention has been carried out detailed elaboration, give some concrete parameter of device, but should also be noted that technical staff for this professional domain, can carry out various changes to its structure and details, and not break away from the scope of the present invention that claims limit.
Claims (10)
1. a manufacture method of selecting regional extension lamination row ripple Electroabsorption Modulated Laser is characterized in that, comprising:
Go up making mask strip pattern (117) at substrate (101);
The multi-quantum pit structure (105) of the multi-quantum pit structure (104) of epitaxial growth heavy doping n-InP resilient coating (102), 1.2Q lower limit layer (103), modulator, laser, 1.2Q upper limiting layer (106) and n-InP inversion layer (107) successively on substrate (101);
To select the superimposed layer multi-quantum pit structure (105) in the lamination multi-quantum pit structure of (113)～(114), regional extension (SAG) district and following lamination multi-quantum pit structure (104), the 1.2Q lower limit layer (103) of light end regions (113) to erode;
Make grating (108) in the large area deposition district, grating is carved trans-reflecting type layer (107) and is goed deep into 1.2Q upper limiting layer (106);
Epitaxial growth p-InP protective layer (109), etching barrier layer (110), p-InP cap rock (111) and p-InGaAs layer (112) successively;
After the p-InGaAs layer of electricity isolated region territory (115) eroded, inject and produce high resistance regions, realize that electricity isolates by carrying out ion in the p-InP cap rock in this zone.
2. the manufacture method of laser according to claim 1 is characterized in that, described substrate (101) is semi-insulating InP substrate.
3. the manufacture method of laser according to claim 1 is characterized in that, described mask strip is wedge shape SiO
2Mask.
4. adopt at described modulator segment and select region growing technology, adopt the large area deposition technology in described laser section.
5. the manufacture method of laser according to claim 1 is characterized in that, described multi-quantum pit structure of growing in selecting regional epitaxial process is two active area laminated construction of modulator Multiple Quantum Well and laser Multiple Quantum Well.
6. the manufacture method of laser according to claim 1 is characterized in that, in described laser section, and the wavelength difference 〉=110nm between two active area lamination Multiple Quantum Well; Wavelength difference between modulator segment lower floor Multiple Quantum Well and the laser section upper strata Multiple Quantum Well is 40～60nm.
7. the manufacture method of laser according to claim 1 is characterized in that, device after extension InP cap rock and p-InGaAs layer, by photoetching and the shallow ridge of wet etching etched features to trapping layer.
8. the manufacture method of laser according to claim 1 is characterized in that, modulator segment and laser section all adopt the coplanar waveguide electrode structure, and modulator segment adopts coplane traveling wave electrode structure.
9. the manufacture method of laser according to claim 7, it is characterized in that, described modulator segment travelling wave signal electrode has adopted the signal line structure of butterfly, and holding wire is done on the shallow ridge of device by polyimides bag platform, and ground wire is then done on semi-insulating substrate.
10. the manufacture method of laser according to claim 1 is characterized in that, described modulator segment is provided with the antireflection port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103042542A CN101471541A (en) | 2007-12-26 | 2007-12-26 | Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103042542A CN101471541A (en) | 2007-12-26 | 2007-12-26 | Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101471541A true CN101471541A (en) | 2009-07-01 |
Family
ID=40828748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007103042542A Pending CN101471541A (en) | 2007-12-26 | 2007-12-26 | Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101471541A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055133B (en) * | 2009-11-04 | 2012-08-22 | 中国科学院半导体研究所 | Making method of electrical absorption modulation tunneling injection type distributed feedback semiconductor laser |
| CN103094835A (en) * | 2013-01-14 | 2013-05-08 | 武汉电信器件有限公司 | Method capable of improving isolation resistance of electro-absorption modulated laser device |
| CN105576499A (en) * | 2015-12-25 | 2016-05-11 | 福建中科光芯光电科技有限公司 | InP groove corrosion method |
| CN106785916A (en) * | 2017-02-27 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacture method |
| WO2020062662A1 (en) * | 2018-09-30 | 2020-04-02 | 武汉电信器件有限公司 | Electro-absorption modulation integrated laser chip and manufacture method therefor |
| CN111052520A (en) * | 2017-09-07 | 2020-04-21 | 三菱电机株式会社 | Semiconductor optical device |
| CN112382923A (en) * | 2021-01-11 | 2021-02-19 | 武汉敏芯半导体股份有限公司 | Electroabsorption modulated laser |
| CN112670823A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for manufacturing electric absorption modulation laser |
| CN114976872A (en) * | 2021-02-24 | 2022-08-30 | 青岛海信宽带多媒体技术有限公司 | EML chip and optical module |
| WO2022188581A1 (en) * | 2021-03-11 | 2022-09-15 | 青岛海信宽带多媒体技术有限公司 | Eml chip and optical module |
| WO2022193886A1 (en) * | 2021-03-16 | 2022-09-22 | 华为技术有限公司 | Optical modulation and amplification apparatus, optical module, optical network unit and optical communication system |
| WO2022222919A1 (en) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | Electro-absorption modulation laser, optical transmission assembly, and optical terminal |
| WO2023093052A1 (en) * | 2021-11-29 | 2023-06-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
-
2007
- 2007-12-26 CN CNA2007103042542A patent/CN101471541A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055133B (en) * | 2009-11-04 | 2012-08-22 | 中国科学院半导体研究所 | Making method of electrical absorption modulation tunneling injection type distributed feedback semiconductor laser |
| CN103094835A (en) * | 2013-01-14 | 2013-05-08 | 武汉电信器件有限公司 | Method capable of improving isolation resistance of electro-absorption modulated laser device |
| CN105576499A (en) * | 2015-12-25 | 2016-05-11 | 福建中科光芯光电科技有限公司 | InP groove corrosion method |
| CN106785916A (en) * | 2017-02-27 | 2017-05-31 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacture method |
| CN106785916B (en) * | 2017-02-27 | 2019-07-26 | 武汉光迅科技股份有限公司 | A kind of Electroabsorption Modulated Laser and its manufacturing method |
| CN111052520A (en) * | 2017-09-07 | 2020-04-21 | 三菱电机株式会社 | Semiconductor optical device |
| CN111052520B (en) * | 2017-09-07 | 2021-10-15 | 三菱电机株式会社 | Semiconductor optical device |
| WO2020062662A1 (en) * | 2018-09-30 | 2020-04-02 | 武汉电信器件有限公司 | Electro-absorption modulation integrated laser chip and manufacture method therefor |
| CN112670823A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for manufacturing electric absorption modulation laser |
| CN112382923B (en) * | 2021-01-11 | 2021-03-23 | 武汉敏芯半导体股份有限公司 | Electroabsorption modulated laser |
| CN112382923A (en) * | 2021-01-11 | 2021-02-19 | 武汉敏芯半导体股份有限公司 | Electroabsorption modulated laser |
| CN114976872A (en) * | 2021-02-24 | 2022-08-30 | 青岛海信宽带多媒体技术有限公司 | EML chip and optical module |
| WO2022188581A1 (en) * | 2021-03-11 | 2022-09-15 | 青岛海信宽带多媒体技术有限公司 | Eml chip and optical module |
| WO2022193886A1 (en) * | 2021-03-16 | 2022-09-22 | 华为技术有限公司 | Optical modulation and amplification apparatus, optical module, optical network unit and optical communication system |
| WO2022222919A1 (en) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | Electro-absorption modulation laser, optical transmission assembly, and optical terminal |
| WO2023093052A1 (en) * | 2021-11-29 | 2023-06-01 | 青岛海信宽带多媒体技术有限公司 | Optical module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101471541A (en) | Method for making laminated travelling wave electroabsorption modulation laser with epitaxial selection region | |
| JP6458143B2 (en) | Semiconductor light modulator | |
| US8891570B2 (en) | Optical semiconductor device | |
| CN111082314B (en) | Semiconductor laser and preparation method thereof | |
| JP4861112B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| CN103117510A (en) | Hybrid silicon-based whispering gallery mode microcavity laser | |
| JP2003069153A (en) | Semiconductor optical device and integration type optical semiconductor device | |
| CN100391069C (en) | Device structure and its production for single-modulus quantum cascade laser | |
| CN112072466A (en) | Semiconductor laser and preparation method thereof | |
| JP2015162576A (en) | Semiconductor optical integrated element and semiconductor optical integrated element manufacturing method | |
| CN103605218B (en) | Waveguide electro-optic modulator and preparation method thereof | |
| CN113422295A (en) | Multi-junction distributed feedback semiconductor laser and preparation method thereof | |
| JPH09331110A (en) | Optical semiconductor device and manufacture thereof | |
| CN106451074B (en) | A kind of buried heterostructure quantum cascade laser of waveguide optimization | |
| CN115579735B (en) | Preparation method of monolithic integrated two-dimensional DFB array chip | |
| JPH09283786A (en) | Waveguide-type semiconductor light-receiving element and its manufacture method | |
| CN100367586C (en) | Al-Ga-In-As multi-quantum sink super radiation luminous diode | |
| JP4948469B2 (en) | Semiconductor optical device | |
| JPWO2015015633A1 (en) | Optical semiconductor device and manufacturing method thereof | |
| CN116111452A (en) | Structure and manufacturing method of electroabsorption modulation laser chip | |
| JP2018006590A (en) | Optical semiconductor element | |
| CN108988124B (en) | Monolithic integration tunnel junction laser for microwave oscillation source | |
| JP3654429B2 (en) | Manufacturing method of optical semiconductor device | |
| JPH07115251A (en) | Semiconductor laser | |
| CN213584599U (en) | Semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090701 |