CN110824614B - Transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide - Google Patents
Transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide Download PDFInfo
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Abstract
The invention discloses a transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on triple-coupled waveguide, which sequentially comprises a silicon-based substrate, a buried oxide layer, a power dividing component and an upper cladding from bottom to top, wherein the buried oxide layer grows on the upper surface of the silicon-based substrate, the upper cladding covers the upper surface of the buried oxide layer, and the optical power dividing component horizontally grows on the upper surface of the buried oxide layer and is covered by the upper cladding. The invention can greatly reduce the insertion loss of the optical power splitter, improve the extinction ratio of the device, shorten the size of the device and reduce the manufacturing difficulty of the device.
Description
Technical Field
The invention relates to the technical field of integrated optics, in particular to a transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide.
Background
Silicon-on-insulator (SOI) material systems have attracted much attention in recent years as a platform for integrated photonic circuit (PICs) fabrication. In PIC, an optical power splitter is a key device for realizing power distribution among channels, but the refractive index difference between a cladding layer and a core layer in an SOI material is large, so that problems related to polarization are easily caused, including polarization mode dispersion, polarization-related gain and the like. Therefore, polarization control of power allocation becomes indispensable in PIC. The usual solution is to eliminate the unwanted polarized light by means of a mode analyzer and then cascade a power splitter. Generally, mode analyzers are divided into two types, TE and TM analyzers. Wherein the TE analyzer can pass the TE polarized light and block the TM polarized light. Currently, mode analyzers based on different principles and with different structures are reported in succession. Hybrid plasmon waveguide based analyzers offer unique advantages in that they can confine light to dimensions below the diffraction limit. However, since the introduction of metal materials also brings higher ohmic loss, the insertion loss of the mode analyzer based on the single structure of the hybrid plasma waveguide is generally higher, which is not favorable for the application of the device to a high-performance photon loop. In addition, the cascade connection of the pre-mode analyzer and the post-power divider is not favorable for realizing the dense integration of the PIC. Therefore, it is necessary to design a single device with compact structure, high extinction ratio, low insertion loss, and mode blocking and power distribution functions.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a transverse magnetic mode cut-off transverse electric mode equipartition optical power splitter based on three-coupling waveguide, which can greatly reduce the insertion loss of the optical power splitter, improve the extinction ratio of a device, shorten the size of the device and reduce the manufacturing difficulty of the device.
In order to solve the technical problem, the invention provides a transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on triple-coupled waveguide, which sequentially comprises a silicon-based substrate, a buried oxide layer, a power dividing component and an upper cladding from bottom to top, wherein the buried oxide layer grows on the upper surface of the silicon-based substrate, the upper cladding covers the upper surface of the buried oxide layer, and the optical power dividing component horizontally grows on the upper surface of the buried oxide layer and is covered by the upper cladding.
Preferably, the optical power splitting component comprises a lower input channel, a lower middle straight channel, a lower left output channel, a lower left sub-wavelength grating channel, a lower right straight output channel, a lower right sub-wavelength grating channel, a first section of upper middle straight channel, a second section of upper middle straight channel, a third section of upper middle straight channel, and a fourth section of upper middle straight channel;
one end of the lower middle straight channel is connected with the lower input channel to form a middle channel;
the lower layer left straight channel is connected with the lower layer left output channel, and the lower layer right straight channel is connected with the lower layer right output channel; wherein, the lower left output channel and the lower right output channel are positioned at the same end;
the lower-layer left-path through channel, the lower-layer left-path sub-wavelength grating channel, the lower-layer right-path through channel and the lower-layer right-path sub-wavelength grating channel are symmetrically arranged on the left side and the right side of the lower-layer middle-path through channel, the distance between adjacent channels is 0.05-0.25 mu m, the first-section upper-layer middle-path through channel, the second-section upper-layer middle-path through channel, the third-section upper-layer middle-path through channel and the fourth-section upper-layer middle-path through channel are sequentially arranged in a row and are all aligned above the lower-layer middle-path through channel, the distance between the upper-layer adjacent channels is 0.15-0.25 mu m, and the structure of the three-waveguide directional coupler for cutting off the transverse electric mode and equally dividing the transverse magnetic.
Preferably, the lower layer input channel, the lower layer middle path through channel, the lower layer left path output channel, the lower layer right path through channel and the lower layer right path output channel are all silicon-based strip waveguides, the lower layer left path sub-wavelength grating channel and the lower layer right path sub-wavelength grating channel are all sub-wavelength grating waveguides, the first section upper layer middle path through channel, the second section upper layer middle path through channel, the third section upper layer middle path through channel and the fourth section upper layer middle path through channel are all mixed plasma waveguides,
preferably, the transverse magnetic mode cuts off the three-waveguide directional coupler structure with the transverse electric mode equally divided, wherein the lower layer is a lower layer left path through channel, a lower layer left path sub-wavelength grating channel, a lower layer right path through channel and a lower layer right path sub-wavelength grating channel, the lower layer left path through channel, the lower layer right path sub-wavelength grating channel and the lower layer right path sub-wavelength grating channel are symmetrically arranged on the left side and the right side of the lower layer middle path through channel, the upper layer is a first section upper layer middle path through channel, a second section upper layer middle path through channel, a third section upper layer middle path through channel and a fourth section upper layer middle path through channel, the upper layer middle path through channel and the fourth section upper layer middle.
Preferably, the structure of the hybrid plasmon waveguide is a double-layer structure in which the lower layer is a silicon waveguide layer and the upper layer is a metal cladding layer.
Preferably, the metal material of the metal covering layer is a high-loss metal with a dielectric constant imaginary part value larger than 10, and the high-loss metal refers to silver, aluminum and zinc
Preferably, the dimensions of the silicon-based strip waveguide, the sub-wavelength grating waveguide and the hybrid plasma waveguide satisfy the following conditions:
(1) the difference between the real parts of the effective refractive indexes of the transverse electric modes of the silicon-based strip waveguide and the hybrid plasma waveguide is more than 0.2, and the phases are mismatched;
(2) the real parts of the effective refractive indexes of the transverse magnetic modes of the silicon-based strip waveguide and the hybrid plasma waveguide are equal and are in phase matching;
(3) the difference between the real parts of the effective refractive indexes of the transverse magnetic modes of the silicon-based strip waveguide and the sub-wavelength grating waveguide is greater than 0.2, and the phases are mismatched;
(4) the silicon-based strip waveguide and the sub-wavelength grating waveguide have the same real part of the effective refractive index of the transverse electric mode and are in phase matching.
Preferably, the transverse magnetic mode cuts off the transverse electric mode equipartition transverse electric mode coupling length L of the three-waveguide directional coupler structureCSatisfies the following formula:
in the formula: λ is the wavelength in free space and,
the effective refractive index of the 0 th order transverse electric mode supported by the three-waveguide directional coupler structure for cutting off the transverse electric mode equipartition for the transverse magnetic mode,
the effective refractive index of the 2 nd order transverse electric mode supported by the structure of the three-waveguide directional coupler for cutting off the transverse electric mode and equally dividing the transverse magnetic mode, Re represents a real part value, and m is a positive odd number.
Preferably, the silicon-based substrate is a silicon cell with a standard size, the buried oxide layer is a silicon dioxide material thermally grown on the silicon-based substrate, the upper cladding layer is made of a silicon dioxide material, and the thickness of the buried oxide layer is 2-3 μm.
The invention has the beneficial effects that: (1) the insertion loss is low: after the transverse electric mode enters the lower layer input channel, because the difference of the real parts of the effective refractive indexes between the transverse electric modes of the silicon-based strip waveguide and the hybrid plasma waveguide is more than 0.2, the phase matching condition cannot be met, and the transverse electric mode cannot be coupled into the upper layer plasma waveguide; the real parts of the effective refractive indexes of the transverse electric modes of the silicon-based strip waveguide and the sub-wavelength grating waveguide are equal, transverse electric mode signals are coupled to the left and right silicon-based strip waveguides at the lower layer for transmission, ohmic loss in the upper layer middle path hybrid plasma waveguide hardly influences the transmission of the transverse electric modes, and the insertion loss is greatly reduced; (2) the structure is compact: the invention introduces the sub-wavelength grating structure, which greatly shortens the coupling distance of the transverse electric mode in the three-waveguide directional coupler structure with the transverse magnetic mode cut-off and transverse electric mode equipartition; in addition, the hybrid plasma waveguide is introduced, the hybrid plasma waveguide of the upper middle path is segmented, the distance between the hybrid plasma waveguide of the upper middle path and the silicon-based strip waveguide of the lower middle path is reduced, and the structural parameters of the hybrid plasma waveguide are adjusted, so that higher ohmic loss can be realized, the distance required by the cut-off of the transverse magnetic mode is shortened, and the size of the optical power divider is further reduced; (3) the extinction ratio is high: after the transverse magnetic mode enters the lower layer input channel, because the difference of the effective real parts of the refractive indexes between the transverse magnetic modes of the silicon-based strip waveguide and the sub-wavelength grating waveguide is larger than 0.2, the phase matching condition cannot be met, the transverse magnetic mode can only be limited in the middle channel of the lower layer, the effective real parts of the refractive indexes between the transverse magnetic modes of the silicon-based strip waveguide and the hybrid plasma waveguide are equal, the phase matching condition is met, the transverse magnetic mode is gradually coupled into the hybrid plasma waveguide of the middle channel section of the upper layer, and then the energy of the transverse magnetic mode is dissipated by utilizing ohmic loss. By adjusting the structural size of the hybrid plasma waveguide and the distance between the hybrid plasma waveguides, the ohmic loss of the waveguide to the transverse magnetic mode can be improved. After the transverse electric mode enters the lower layer input channel, because the difference of the effective refractive index real part between the transverse electric modes of the silicon-based strip waveguide and the hybrid plasma waveguide is larger than 0.2, the phase matching condition can not be met, the transverse electric mode can not be coupled into the upper layer plasma waveguide, the effective refractive index real part between the transverse electric modes of the silicon-based strip waveguide and the sub-wavelength grating waveguide is equal, transverse electric mode signals are coupled into the left and right silicon-based strip waveguides of the lower layer for transmission, ohmic loss in the upper layer middle path hybrid plasma waveguide almost has no influence on the transmission of the transverse electric mode, and the optical power splitter for uniformly dividing the transverse magnetic mode cut-off transverse electric mode based on the three-coupled waveguide can realize a very high extinction ratio.
Drawings
Fig. 1 is a schematic structural diagram of an optical power splitter according to the present invention.
Fig. 2 is a schematic cross-sectional structure diagram of the optical power splitter of the present invention.
Fig. 3 is a schematic view of a side view structure of the optical power splitter of the present invention.
FIG. 4 is a diagram of an electric field distribution of the 0 th order transverse electric mode of the polarization dependent power splitter of the present invention at an operating wavelength of 1.55 μm.
FIG. 5 is a diagram of the electric field distribution of the 0 th order transverse magnetic mode of the polarization dependent power divider of the present invention at the 1.55m operating wavelength.
Wherein, 1, a lower layer input channel; 2. a lower middle straight-through channel; 3. a lower left-way through channel; 4. a lower left output channel; 5. a lower left sub-wavelength grating channel; 6. a lower right straight-through channel; 7. a lower right output channel; 8. a lower right sub-wavelength grating channel; 9. a first section of upper middle straight-through channel; 10. a second section of upper middle straight-through channel; 11. a third section of upper middle straight-through channel; 12. a fourth section of upper middle straight-through channel; 13. a symmetric three-waveguide directional coupler; 14. a base substrate; 15. burying the oxide layer; 16. an upper cladding layer; 17. a silicon waveguide layer; 18. a metal cap layer; 19. and a power dividing component.
Detailed Description
As shown in fig. 1 and fig. 3, the optical power splitter sequentially includes, from bottom to top, a silicon-based substrate 14, a buried oxide layer 15, an optical power splitting component 19, and an upper cladding layer 16, where the buried oxide layer 15 grows on the upper surface of the silicon-based substrate 14, the upper cladding layer 16 covers the upper surface of the buried oxide layer 15, and the optical power splitting component 19 horizontally grows on the upper surface of the buried oxide layer 15 and is covered by the upper cladding layer 16.
The optical power division component 19 comprises a lower layer input channel 1, a lower layer middle path through channel 2, a lower layer left path through channel 3, a lower layer left path output channel 4, a lower layer left path sub-wavelength grating channel 5, a lower layer right path through channel 6, a lower layer right path output channel 7, a lower layer right path sub-wavelength grating channel 8, a first section upper layer middle path through channel 9, a second section upper layer middle path through channel 10, a third section upper layer middle path through channel 11 and a fourth section upper layer middle path through channel 12; one end of the lower middle straight channel 2 is connected with the lower input channel 1 to form a middle channel; the lower layer left path straight-through channel 3 is connected with the lower layer left path output channel 4, and the lower layer right path straight-through channel 6 is connected with the lower layer right path output channel 7; wherein, the lower left output channel 4 and the lower right output channel 7 are positioned at the same end; the lower-layer left-path through channel 3, the lower-layer left-path sub-wavelength grating channel 5, the lower-layer right-path through channel 6 and the lower-layer right-path sub-wavelength grating channel 8 are symmetrically arranged on the left side and the right side of the lower-layer middle-path through channel 2, the distance between adjacent channels is 0.05-0.25 mu m, the first-section upper-layer middle-path through channel 9, the second-section upper-layer middle-path through channel 10, the third-section upper-layer middle-path through channel 11 and the fourth-section upper-layer middle-path through channel 12 are sequentially arranged in a row and are all aligned above the lower-layer middle-path through channel 2, the distance between the upper-layer adjacent channels is 0.15-0.25 mu m, and a transverse magnetic mode cut-off transverse electric mode equally dividing three-waveguide directional coupler structure 13 is formed.
The lower layer input channel 1, the lower layer middle path through channel 2, the lower layer left path through channel 3, the lower layer left path output channel 4, the lower layer right path through channel 6 and the lower layer right path output channel 7 are all silicon-based strip waveguides, the lower layer left path sub-wavelength grating channel 5 and the lower layer right path sub-wavelength grating channel 8 are all sub-wavelength grating waveguides, and the first section upper layer middle path through channel 9, the second section upper layer middle path through channel 10, the third section upper layer middle path through channel 11 and the fourth section upper layer middle path through channel 12 are all mixed plasma waveguides.
The transverse magnetic mode cut-off transverse electric mode equally-divided three-waveguide directional coupler structure 13 is characterized in that a lower layer is a lower layer left path through channel 3, a lower layer left path sub-wavelength grating channel 5, a lower layer right path through channel 6 and a lower layer right path sub-wavelength grating channel 8, the lower layer left path through channel, the lower layer right path sub-wavelength grating channel and the lower layer right path through channel are symmetrically arranged on the left side and the right side of a lower layer middle path through channel 2, an upper layer is a first section upper layer middle path through channel 9, a second section upper layer middle path through channel 10, a third section upper layer middle path through channel 11 and a fourth section upper layer middle path through channel 12, the upper layer middle path through channels are sequentially arranged in a row and are all.
As shown in fig. 2, the structure of the hybrid plasmon waveguide is a double-layer structure in which the lower layer is a silicon waveguide layer 17 and the upper layer is a metal cladding layer 18.
Reasonably designing the sizes of the mid-silicon-based strip waveguide, the sub-wavelength grating waveguide and the hybrid plasma waveguide, so that the refractive index of a transverse magnetic mode of the strip waveguide is equal to the real part of the effective refractive index of a transverse magnetic mode of the hybrid plasma waveguide, and the difference of the real parts of the effective refractive indexes of transverse electric modes of the two waveguides is more than 0.2, namely the transverse magnetic mode meets the phase matching condition and the transverse electric mode is mismatched; the refractive index of the transverse electric mode of the strip waveguide is equal to the real part of the effective refractive index of the transverse electric mode of the sub-wavelength grating waveguide, and the difference of the real parts of the effective refractive indexes of the transverse magnetic modes of the two waveguides is larger than 0.2, namely the transverse electric mode meets the phase matching condition and the phase of the transverse magnetic mode is mismatched. When the transverse magnetic mode enters the lower layerWhen the waveguide is input, due to phase mismatch with the sub-wavelength grating waveguide and phase matching with the hybrid plasma waveguide, transverse magnetic mode energy can only be concentrated in a lower-layer middle channel and is finally coupled into an upper-layer hybrid plasma waveguide to be gradually attenuated. When the transverse electric mode enters the next input waveguide, the transverse electric mode is gradually coupled into the left and right waveguides of the lower layer due to phase matching with the sub-wavelength grating waveguide, almost no influence of the upper layer middle path hybrid plasma waveguide is generated, and the transmission loss is very small. When the transverse electric mode is inputted to the intermediate waveguide, the transverse electric mode coupling length L of the three-waveguide directional coupler structure 13 is determined such that the transverse magnetic mode is equally divided by the transverse electric mode according to the coupled mode theoryCSatisfies the following conditions:
then the transverse electric mode of the middle path will be coupled into the left and right two paths completely and uniformly. Where lambda is the free-space wavelength,
the effective refractive index of the 0 th order transverse electric mode supported by the three-waveguide directional coupler structure for cutting off the transverse electric mode equipartition for the transverse magnetic mode,
the effective refractive index of the 2 nd order transverse electric mode supported by the structure of the three-waveguide directional coupler for cutting off the transverse electric mode and equally dividing the transverse magnetic mode, Re represents a real part value, and m is a positive odd number. Obviously, when m is 1, LCThe distance is shortest.
FIG. 4 shows the input mode as 0-order transverse electric mode (TE)0) And when the three-coupling waveguide-based transverse magnetic mode cutoff transverse electric mode is adopted, the electric field distribution diagram of the optical power divider is obtained. The operating wavelength was 1.55 μm, and TE was observed0After entering the input waveguide, the optical fiber enters the sub-wavelength grating waveguides on the two sides and is gradually coupled into the output waveguides on the two sides, and finally is completely coupled into the output waveguides. TE0The mode is well confined in the input and output strip waveguide during transmission, almost has no loss and is coupledThe energy loss in the process is small, and the insertion loss is small.
FIG. 5 shows the input mode as 0-order transverse magnetic mode (TM)0) And when the three-coupling waveguide-based transverse magnetic mode cutoff transverse electric mode is adopted, the electric field distribution diagram of the optical power divider is obtained. The operating wavelength is 1.55 μm, and TM can be seen0After entering the input waveguide, the optical fiber does not enter the sub-wavelength grating waveguide but continues to be transmitted in the intermediate path strip waveguide due to phase mismatch, and then is gradually coupled into the upper layer hybrid plasma waveguide to be gradually attenuated, and finally the TM is0The mode is completely attenuated, with almost no TM0Mode output, the extinction ratio of this device is very high as illustrated in connection with fig. 4.
Claims (8)
1. The transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on the triple-coupled waveguide is characterized in that a silicon-based substrate (14), a buried oxide layer (15), an optical power dividing component (19) and an upper cladding (16) are sequentially arranged from bottom to top, wherein the buried oxide layer (15) grows on the upper surface of the silicon-based substrate (14), the upper cladding (16) covers the upper surface of the buried oxide layer (15), and the optical power dividing component (19) horizontally grows on the upper surface of the buried oxide layer (15) and is covered by the upper cladding (16);
the optical power division component (19) comprises a lower layer input channel (1), a lower layer middle path through channel (2), a lower layer left path through channel (3), a lower layer left path output channel (4), a lower layer left path sub-wavelength grating channel (5), a lower layer right path through channel (6), a lower layer right path output channel (7), a lower layer right path sub-wavelength grating channel (8), a first section upper layer middle path through channel (9), a second section upper layer middle path through channel (10), a third section upper layer middle path through channel (11) and a fourth section upper layer middle path through channel (12);
one end of the lower middle straight channel (2) is connected with the lower input channel (1) to form a middle channel;
the lower layer left path through channel (3) is connected with the lower layer left path output channel (4), and the lower layer right path through channel (6) is connected with the lower layer right path output channel (7); wherein, the lower left output channel (4) and the lower right output channel (7) are positioned at the same end;
the lower-layer left-path through channel (3), the lower-layer left-path sub-wavelength grating channel (5), the lower-layer right-path through channel (6) and the lower-layer right-path sub-wavelength grating channel (8) are symmetrically arranged on the left side and the right side of the lower-layer middle-path through channel (2) in a split mode, the distance between adjacent channels is 0.05-0.25 mu m, the first-section upper-layer middle-path through channel (9), the second-section upper-layer middle-path through channel (10), the third-section upper-layer middle-path through channel (11) and the fourth-section upper-layer middle-path through channel (12) are sequentially arranged in a row and are all aligned above the lower-layer middle-path through channel (2), the distance between the upper-layer adjacent channels is 0.15-0.25 mu m, and a transverse magnetic mode cutoff transverse mode equal-dividing three-waveguide directional coupler structure (13.
2. The triple-coupled-waveguide-based transverse magnetic mode cut-off transverse electric mode equipartition optical power splitter according to claim 1, wherein the lower layer input channel (1), the lower layer middle path through channel (2), the lower layer left path through channel (3), the lower layer left path output channel (4), the lower layer right path through channel (6) and the lower layer right path output channel (7) are all silicon-based strip waveguides, the lower layer left path sub-wavelength grating channel (5) and the lower layer right path sub-wavelength grating channel (8) are all sub-wavelength grating waveguides, and the first section upper layer middle path through channel (9), the second section upper layer middle path through channel (10), the third section upper layer middle path through channel (11) and the fourth section upper layer middle path through channel (12) are all hybrid plasmonic waveguides.
3. The optical power splitter based on three-coupling waveguide transverse magnetic mode cut-off transverse electric mode equipartition according to claim 1, characterized in that the transverse magnetic mode cut-off transverse electric mode equipartition three-waveguide directional coupler structure (13) is provided, wherein the lower layer is a lower layer left path through channel (3), a lower layer left path sub-wavelength grating channel (5), a lower layer right path through channel (6), and a lower layer right path sub-wavelength grating channel (8), which are symmetrically arranged on the left and right sides of the lower layer middle path through channel (2), and the upper layer is a first section upper layer middle path through channel (9), a second section upper layer middle path through channel (10), a third section upper layer middle path through channel (11), and a fourth section upper layer middle path through channel (12), which are sequentially arranged in a row and are all aligned above the lower layer middle path through channel (2).
4. The triple-coupled waveguide based transverse magnetic mode cut-off transverse electric mode averaging optical power splitter according to claim 2, wherein the structure of the hybrid plasmon waveguide is a double-layer structure in which the lower layer is a silicon waveguide layer (17) and the upper layer is a metal cladding layer (18).
5. The triple-coupled-waveguide-based transverse magnetic mode cut-off transverse electric mode averaging optical power splitter according to claim 4, wherein the metal material of the metal covering layer (18) is a high-loss metal with a dielectric constant imaginary part value larger than 10, and the high-loss metal with the dielectric constant imaginary part value larger than 10 refers to silver, aluminum and zinc.
6. The triple-coupled-waveguide-based transverse magnetic mode cut-off transverse electric mode equipartition optical power splitter according to claim 2, wherein the dimensions of the silicon-based strip waveguide, the sub-wavelength grating waveguide and the hybrid plasma waveguide satisfy the following conditions:
(1) the difference between the real parts of the effective refractive indexes of the transverse electric modes of the silicon-based strip waveguide and the hybrid plasma waveguide is more than 0.2, and the phases are mismatched;
(2) the real parts of the effective refractive indexes of the transverse magnetic modes of the silicon-based strip waveguide and the hybrid plasma waveguide are equal and are in phase matching;
(3) the difference between the real parts of the effective refractive indexes of the transverse magnetic modes of the silicon-based strip waveguide and the sub-wavelength grating waveguide is greater than 0.2, and the phases are mismatched;
(4) the silicon-based strip waveguide and the sub-wavelength grating waveguide have the same real part of the effective refractive index of the transverse electric mode and are in phase matching.
7. The triple-coupled-waveguide-based transverse-magnetic-mode-cutoff transverse-electric-mode-averaging optical power splitter according to claim 3, wherein the transverse-electric-mode coupling length L of the transverse-magnetic-mode-cutoff transverse-electric-mode-averaging three-waveguide directional coupler structure (13)CSatisfies the following formula:
in the formula: λ is the wavelength in free space and,
the effective refractive index of the 0 th order transverse electric mode supported by the three-waveguide directional coupler structure for cutting off the transverse electric mode equipartition for the transverse magnetic mode,
the effective refractive index of the 2 nd order transverse electric mode supported by the structure of the three-waveguide directional coupler for cutting off the transverse electric mode and equally dividing the transverse magnetic mode, Re represents a real part value, and m is a positive odd number.
8. The triple-coupled-waveguide-based transverse magnetic mode cut-off transverse electric mode averaging optical power splitter according to claim 1, wherein the silicon-based substrate (14) is a standard-sized silicon wafer, the buried oxide layer (15) is a silicon dioxide material thermally grown on the silicon-based substrate (14), the upper cladding layer (16) is a silicon dioxide material, and the thickness of the buried oxide layer (15) is 2-3 μm.
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| CN112612077B (en) * | 2020-12-09 | 2023-02-03 | 中国科学院微电子研究所 | Hybrid plasma waveguide and method of making the same |
| CN112904477B (en) * | 2021-03-05 | 2022-05-10 | 东南大学 | Polarization insensitive optical power divider based on shallow etching multimode interference coupler |
| CN112946817B (en) * | 2021-03-05 | 2022-05-10 | 东南大学 | Mode order converter based on sub-wavelength structure |
| CN114325936B (en) * | 2022-02-21 | 2024-05-03 | 东南大学 | On-chip integrated photon device with polarization beam splitting and power distribution |
| CN116299851A (en) * | 2023-01-12 | 2023-06-23 | 燕山大学 | High bandwidth power beam splitter based on mixed surface plasma waveguide |
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