CN104051961A - Thyristor laser of PNiN structure - Google Patents
Thyristor laser of PNiN structure Download PDFInfo
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- CN104051961A CN104051961A CN201410289510.5A CN201410289510A CN104051961A CN 104051961 A CN104051961 A CN 104051961A CN 201410289510 A CN201410289510 A CN 201410289510A CN 104051961 A CN104051961 A CN 104051961A
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Abstract
The invention discloses a thyristor laser of a PNiN structure. The optical property of the laser can be displayed, and the electrical property of a thyristor can be further displayed. The thyristor laser belongs to the field of semiconductor photoelectrons. The thyristor laser comprises an N-type electrode, an N-type substrate, an N-type buffer layer, an N-type limiting layer, an undoped active area layer, an N-type inversion layer, a P-type limiting layer, a P-type contact layer and a P-type electrode which are stacked in sequence. The N-type inversion layer and the undoped active area layer are led into the thyristor laser, the high-power and low-threshold-value optical property of the laser is obtained, and meanwhile the electrical property of the thyristor can be obtained.
Description
Technical field
The present invention relates to a kind of thyristor laser of PNiN structure, in conventional P iN structure laser, add N-type inversion layer to become this device of PNiN structure, make its optical characteristics that not only has laser, and there is the electrology characteristic of thyristor.
Background technology
Thyristor is called again thyratron transistor, develops first item thyristor product in the world as far back as nineteen fifty-seven by General Electric Apparatus Co.(U.S.A.), and in 1958 years by its commercialization.Typical thyristor is PNPN four-level semiconductor structure.It can work under high voltage, large current condition, and its course of work can be controlled, be widely used in the electronic circuits such as AC voltage adjusting, controlled rectification, contactless electronic beam switch, inversion and frequency conversion.
Along with semi-conductive development, thyristor also develops into semiconductor optical switch from traditional electronic power switch, and semiconductor optical switch thyristor is still continued to use traditional pnpn structure.Optical switch is studied by increasing scientific researcher because have important application in fields such as optical memory, light interconnection, route, neural nets, also becomes one of now popular research direction.In optical switching device, optics thyristor has lot of advantages, as switching speed faster, lower switch energy consumption etc.
Semiconductor optical switch thyristor mainly concentrates in the research of thyristor laser now, because thyristor laser not only can be used as optical switch, and can Emission Lasers.The carrier depletion speed in traditional pnpn structure thyristor intermediate layer is slow, and switching speed is slow.
Thyristor laser has important application in optical communication and optical interconnection system.The at present research of thyristor laser mainly concentrates on the material system of InP, and its laser emission wavelength mainly concentrates near 1.55 mu m wavebands, but the threshold value of these devices is large, and power is low is limiting its application always.The research of the thyristor laser of GaAs material system also to some extent necessarily makes progress recently, but its complicated material structure can affect its switching speed greatly.Simpler material structure will contribute to obtain switching speed and lower switch energy consumption faster.
Summary of the invention
(1) technical problem that will solve
The object of the present invention is to provide a kind of PNiN structure thyristor laser.In the middle of conventional laser, introduce N-type inversion layer, make the device of this structure in forward bias condition, there is the electrology characteristic of thyristor, in Injection Current situation, there is the optical characteristics of laser simultaneously.This is also the pith that is different from traditional thyristor.In addition, thyristor laser can also be launched low threshold value, high-power laser.This is also the good characteristic of this structure thyristor laser.
(2) technical scheme
For solving the problems of the technologies described above, the present invention proposes a kind of PNiN structure thyristor laser, this thyristor laser is by the N-type electrode layer stacking gradually, N-type substrate, N-type resilient coating, N-type limiting layer, non-impurity-doped active region layer, N-type inversion layer, P type limiting layer, P type contact layer and P type electrode layer) form, described N-type inversion layer (6) consists of GaAs and AlGaAs material.
According to a kind of embodiment of the present invention, described N-type substrate consists of GaAs material, and described N-type resilient coating consists of GaAs material.
According to a kind of embodiment of the present invention, the fixed value that the component of the AlAs in described N-type limiting layer is 0.3～0.7.
According to a kind of embodiment of the present invention, the component of the AlAs in described N-type limiting layer is that excursion is 0.3～0.7 linear gradient value.
According to a kind of embodiment of the present invention, described N-type limiting layer thickness is arranged between 500nm～3000nm.
According to a kind of embodiment of the present invention, described non-impurity-doped active region layer consists of III-V group material.
According to a kind of embodiment of the present invention, described non-impurity-doped active region layer comprises 1～10 quantum well, and quantum-well materials is InGaAs or GaAs or AlGaAs, and the material at base is AlGaAs or GaAs.
According to a kind of embodiment of the present invention, described N-type inversion layer consists of GaAs and AlGaAs material.
According to a kind of embodiment of the present invention, described N-type inversion layer thickness is arranged between 10nm～400nm.
According to a kind of embodiment of the present invention, the fixed value that the component of the AlAs in described N-type inversion layer is 0.3～0.7.
According to a kind of embodiment of the present invention, described P type limiting layer consists of AlGaAs material.
According to a kind of embodiment of the present invention, the fixed value that the component of the AlAs in described P type limiting layer is 0.3～0.7.
According to a kind of embodiment of the present invention, the component of the AlAs in described P type limiting layer is that excursion is 0.3～0.7 linear gradient value.
According to a kind of embodiment of the present invention, described P type limiting layer thickness is arranged between 500nm～3000nm.
According to a kind of embodiment of the present invention, described P type contact layer consists of GaAs material.
According to a kind of embodiment of the present invention, described P type contact layer thickness is arranged between 100nm～500nm.
(3) beneficial effect
The present invention adopts the thyristor laser of PNiN structure, can effectively solve the problems of the prior art.The present invention makes the structure of thyristor laser simpler, is also conducive to large-scale production and industrialization in the time of convenient making.The present invention simultaneously makes the research of thyristor laser be extended to GaAs material system, effectively widened the wave-length coverage of thyristor laser, when forward bias, there is thyristor electrology characteristic, when forward bias, can play on-off action, can realize low threshold value, powerful laser simultaneously.
Accompanying drawing explanation
Fig. 1 is the profile of the PNiN structure thyristor laser of proposition according to the present invention;
The thyristor electrology characteristic figure of the forward bias of the PNiN structure thyristor laser that Fig. 2 proposes according to the present invention;
Optical power-current characteristics figure of the PNiN structure thyristor laser that Fig. 3 proposes according to the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 is the profile of a kind of PNiN structure thyristor laser of proposition according to the present invention.As shown in Figure 1, this laser is comprised of the N-type electrode layer 1 stacking gradually, N-type substrate 2, N-type resilient coating 3, N-type limiting layer 4, non-impurity-doped active region layer 5, N-type inversion layer 6, P type limiting layer 7, P type contact layer 8 and P type electrode layer 9.
Described N-type electrode layer 1 can consist of the material of N-type ohmic contact, for example Au/Zn or AuGeNi.Its thickness should be arranged between 100nm～1000nm, is preferably 350nm.It can be prepared by thermal evaporation or magnetically controlled sputter method.
Described N-type substrate 2 consists of GaAs material.
Described N-type resilient coating 3 consists of GaAs material.Its thickness should be arranged between 50nm～1000nm, is preferably 300nm.It can carry out Material growth preparation by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
Described N-type limiting layer 4 can consist of AlGaAs material, and wherein the component of AlAs can be 0.3～0.7 fixed value, can be also the value for linear gradient, and for example AlAs change of component scope is 0.3～0.7.Its thickness should be arranged between 500nm～3000nm, is preferably 1200nm.It can be prepared by MOCVD or MBE material growth method.
Described non-impurity-doped active region layer 5 can be organized material by III-V and form, GaAs for example, AlGaAs, InGaAs etc.Comprising 1～6 quantum well, quantum-well materials is InGaAs or GaAs or AlGaAs, and the material at base is AlGaAs or GaAs.It can be prepared by MOCVD or MBE material growth method.
Described N-type inversion layer 6 can consist of GaAs and AlGaAs material.Wherein in AlGaAs, the component of AlAs can be 0.3～0.7 fixed value, is preferably 0.47.The thickness of its GaAs material should be arranged between 5nm～200nm, is preferably 10nm; The thickness of AlGaAs material should be arranged between 5nm～200nm, is preferably 35nm.It can be prepared by MOCVD or MBE material growth method.
Described P type limiting layer 7 can consist of AlGaAs material.The fixed value that wherein component of AlAs is 0.3～0.7, or be the structure of linear gradient, wherein AlAs change of component scope is 0.3～0.7.Its thickness should be arranged between 500nm～3000nm, is preferably 1200nm.It can be prepared by MOCVD or MBE material growth method.
Described P type contact layer 8 consists of GaAs material.Its thickness should be arranged between 100nm～500nm, is preferably 200nm.It can be prepared by MOCVD or MBE material growth method.
Described P type electrode layer 9 can consist of the material of P type ohmic contact, AuZn for example, TiAu.Its thickness should be arranged between 100nm～1000nm, is preferably 350nm.It can be prepared by thermal evaporation or magnetically controlled sputter method.
Below by an embodiment, laser of the present invention and corresponding preparation method thereof are described.
In this embodiment, this N-type electrode 1 be produced on substrate 2 below, electrode material is AuGeNi.
N-type substrate 2 adopts GaAs substrate, and its substrate is (100) face N-type gallium arsenic material.
On N-type substrate 2, make N-type resilient coating 3, this N-type resilient coating also adopts MOCVD to carry out epitaxial material growth, and its thickness is 300nm.
On N-type GaAs resilient coating 3, make N-type limiting layer 4, this N-type limiting layer 4 consists of AlGaAs, and alloy is silicon Si, and doping content is more than or equal to 1 * 10
18cm
-3.Wherein the component of AlAs is 0.5, and its thickness is 1200nm.
On N-type limiting layer 4, make non-impurity-doped active region layer 5, the active area materials of this non-impurity-doped active region layer 5 is InGaAs quantum-well materials, and quantum well number is 2.Take InGaAS as quantum-well materials, and GaAs is barrier material, and AlGaAs is limiting layer material, and the component of AlAs is 0.26.
On non-impurity-doped active region layer 5, make this N-type inversion layer 6, N-type inversion layer 6 consists of GaAs and AlGaAs, and alloy is silicon Si, and doping content is more than or equal to 1 * 10
18cm
-3.Wherein GaAs layer thickness is 10nm, and AlGaAs layer thickness is 35nm, and the component of AlAs is 0.47.
On N-type inversion layer 6, make P type limiting layer 7, this P type limiting layer 7 consists of AlGaAs, and base and doped thing is carbon C, and doping content is more than or equal to 1 * 10
18cm
-3wherein the component of AlAs is 0.47, and its thickness is 1200nm.
On P type limiting layer 7, make this P type contact layer 8, this P type contact layer 8 consists of GaAs, and alloy is carbon C, and doping content is more than or equal to 1 * 10
18cm
-3.Its thickness is 200nm.
On P type contact layer 8, make this P type electrode 9, P type electrode 9 electrode materials are TiAu.Its thickness is 350nm.
4 microns of bars that thus prepared by structural material are wide, the uncoated laser tube core of 300 microns of chamber length is when work, the thyristor laser of this structure has thyristor electrology characteristic when forward bias, can realize the low threshold value of 50mA, the powerful laser of 40mW simultaneously.
Fig. 2 is the thyristor electrology characteristic figure of the thyristor laser forward bias of this embodiment.As shown in the figure, when forward bias, its voltage-to-current curve presents S type thyristor electrology characteristic, and its switching point voltage and holding point voltage are respectively 11V and 4.6V, and corresponding electric current is respectively 20mA and 21mA.
Fig. 3 is the power-current optical characteristics figure of the PNiN structure thyristor laser of proposition according to the present invention, and as shown in the figure, the threshold value of this thyristor laser can be low to moderate 50mA, and power can be as high as 40mW.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (16)
1. a PNiN structure thyristor laser, it is characterized in that, this thyristor laser is comprised of the N-type electrode layer (1) stacking gradually, N-type substrate (2), N-type resilient coating (3), N-type limiting layer (4), non-impurity-doped active region layer (5), N-type inversion layer (6), P type limiting layer (7), P type contact layer (8) and P type electrode layer (9), and described N-type inversion layer (6) consists of GaAs and AlGaAs material.
2. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, described N-type substrate (2) consists of GaAs material, and described N-type resilient coating (3) consists of GaAs material.
3. PNiN structure thyristor laser as claimed in claim 1, is characterized in that the fixed value that the component of the AlAs in described N-type limiting layer (4) is 0.3～0.7.
4. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, the component of the AlAs in described N-type limiting layer (4) is that excursion is 0.3～0.7 linear gradient value.
5. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, described N-type limiting layer (4) thickness is arranged between 500nm～3000nm.
6. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, described non-impurity-doped active region layer (5) consists of III-V group material.
7. PNiN structure thyristor laser as claimed in claim 6, is characterized in that, described non-impurity-doped active region layer (5) comprises 1～10 quantum well, and quantum-well materials is InGaAs or GaAs or AlGaAs, and the material at base is AlGaAs or GaAs.
8. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, described N-type inversion layer (6) consists of GaAs and AlGaAs material.
9. PNiN structure thyristor laser as claimed in claim 1, is characterized in that the fixed value that the component of the AlAs in described N-type inversion layer (6) is 0.3～0.7.
10. PNiN structure thyristor laser as claimed in claim 1, is characterized in that, described N-type inversion layer (6) thickness is arranged between 10nm～400nm.
11. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that, described P type limiting layer (7) consists of AlGaAs material.
12. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that the fixed value that the component of the AlAs in described P type limiting layer (7) is 0.3～0.7.
13. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that, the component of the AlAs in described P type limiting layer (7) is that excursion is 0.3～0.7 linear gradient value.
14. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that, described P type limiting layer (7) thickness is arranged between 500nm～3000nm.
15. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that, described P type contact layer (8) consists of GaAs material.
16. PNiN structure thyristor lasers as claimed in claim 1, is characterized in that, described P type contact layer (8) thickness is arranged between 100nm～500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410289510.5A CN104051961A (en) | 2014-06-26 | 2014-06-26 | Thyristor laser of PNiN structure |
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| CN201410289510.5A CN104051961A (en) | 2014-06-26 | 2014-06-26 | Thyristor laser of PNiN structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319307A (en) * | 2014-09-26 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | PNIN type InGaAs infrared detector |
| CN106356716A (en) * | 2016-11-04 | 2017-01-25 | 中国科学院半导体研究所 | GaAs-based broadband spectrum thyristor laser device with gate electrode |
| CN107069427A (en) * | 2017-01-24 | 2017-08-18 | 中国科学院半导体研究所 | The preparation method of wide spectrum thyristor laser |
-
2014
- 2014-06-26 CN CN201410289510.5A patent/CN104051961A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| HUOLEI WANG ET AL.: "Ultrabroad stimulated emission from quantum well laser", 《APPLIED PHYSICS LETTERS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104319307A (en) * | 2014-09-26 | 2015-01-28 | 中国科学院长春光学精密机械与物理研究所 | PNIN type InGaAs infrared detector |
| CN104319307B (en) * | 2014-09-26 | 2017-04-05 | 中国科学院长春光学精密机械与物理研究所 | PNIN type InGaAs Infrared Detectors |
| CN106356716A (en) * | 2016-11-04 | 2017-01-25 | 中国科学院半导体研究所 | GaAs-based broadband spectrum thyristor laser device with gate electrode |
| CN106356716B (en) * | 2016-11-04 | 2018-12-18 | 中国科学院半导体研究所 | A kind of wide spectrum thyristor laser of GaAs base band gate electrode |
| CN107069427A (en) * | 2017-01-24 | 2017-08-18 | 中国科学院半导体研究所 | The preparation method of wide spectrum thyristor laser |
| CN107069427B (en) * | 2017-01-24 | 2020-02-28 | 中国科学院半导体研究所 | Preparation method of wide-spectrum thyristor laser |
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Application publication date: 20140917 |