CN106300015A - A kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof - Google Patents
A kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof Download PDFInfo
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- CN106300015A CN106300015A CN201610871786.3A CN201610871786A CN106300015A CN 106300015 A CN106300015 A CN 106300015A CN 201610871786 A CN201610871786 A CN 201610871786A CN 106300015 A CN106300015 A CN 106300015A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Abstract
The present invention provides a kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof, relates to middle infrared laser technical field.Laser instrument of the present invention includes: the structure such as ducting layer, insulating barrier in active area (including InGaAsSb SQW or AlGaInAsSb barrier layer), undoped AlGaInAsSb.Meanwhile, the present invention proposes to use the face waveguide of ridge width, and waveguide is etched to ducting layer, etches electrical pumping window at insulating barrier, forms territory, current injection area；Before the electrode of deposition n face, grinding and polishing face dilute hydrochloric acid solution is processed；It addition, be passed through formic acid and nitrogen two-way protective gas when laser instrument sinters, it is intended to laser instrument is obtained in that high-power output, it is to avoid solder occurs that In phenomenon climbed by cavity and device, improves device stability and life-span.
Description
Technical field
The present invention relates to middle infrared laser technical field, particularly relate to a kind of high-power 1.8-4 μm semiconductor laser
And preparation method thereof.
Background technology
Mid-infrared 1.8-4 mu m waveband is important atmospheric window, contains the characteristic spectral line of many important gas molecules, should
Wave band of laser source can be widely applied to the civilian projects such as air monitoring, gas detecting；It addition, be operated in the big of this wave band
Power laser diode is expected to play a great role in the military project such as laser radar, photoelectronic warfare.At present, this wave band at home
High power light source research is still blank, and this band laser international embargo powerful also result in being subject to of its domestic market application
Resistance.Therefore, independent research mid-infrared semiconductor laser is an important directions of current China scientific research.
Traditional GaAs base and InP-base laser instrument are limited to the physical mechanisms such as energy gap, are difficult to obtain 1.8-4 μm and swash
Light.(AlGaIn) (AsSb) material system is the preferable material system of this wave band in lattice paprmeter and energy gap, because of
And become the preferred material system preparing this wave band of laser source.At process aspect, different from tradition near infrared laser, GaSb material
The band gap of material relative narrower has inborn advantage, and material easily oxidation itself, forms antimony and the oxide of gallium and precipitation
Antimony simple substance.Further, since select ratio difference, need to debug new etching gas formula carrying out dry etching.Therefore, this material
The laser instrument of system has a lot of difficult point in preparation technology.
Control material component by Solid Source molecular beam epitaxial growth technology (MBE) can obtain at 1.8-4 mu m waveband
Excitation wavelength.By to n face electrode acidic treatment and utilize the sintering process of two-way gas can obtain the laser of function admirable
Device.
Summary of the invention
(1) to solve the technical problem that
Conventional laser is limited to the reasons such as energy gap in terms of physical mechanism, hardly results in 1.8-4 μm laser, separately
Outward, it is excessive that the chamber surface current of conventional laser injects density, thus causes face, chamber Carrier recombination rate to increase the heating of face, chamber；Another
Aspect, time in conventional laser preparation technology, in the polishing process of substrate, surface oxidation gallium, stibium oxide and antimony simple substance
The life-span of laser instrument and performance can be produced impact；And in conventional anneal process, often occur climbing indium, solder oxidation and weldering
The material violent situation of surface undulation, the defect causing laser instrument itself is serious.These will certainly will greatly hinder middle infrared laser
Research and development and application process.
(2) technical scheme
So in order to solve the problems referred to above, be obtained in that more powerful, yield rate is higher, the quasiconductor that performance is more stable
Laser instrument, the present invention proposes a kind of semiconductor laser, including: ducting layer, insulation in active area, undoped AlGaInAsSb
Layer, active area is positioned in undoped AlGaInAsSb below ducting layer, and insulating barrier is positioned at above both, and wherein active area includes:
InGaAsSb SQW and AlGaInAsSb barrier layer constitute quantum well structure；Ducting layer upper surface in undoped AlGaInAsSb
There is etching vallum molded breadth face waveguide；There is on insulating barrier electrical pumping window.
(AlGaIn) (AsSb) material system is the 2 preferable material bodies of mu m waveband in lattice paprmeter and energy gap
System.In undoped AlGaInAsSb, ducting layer is five yuan of compound-materials of AlGaInAsSb of undoped, and its component ratio is
Al0.3-0.4GaAs0.02-0.04Sb, thickness is 200-400nm.
Insulating barrier is SiO2Or SiN, thickness is 100-300nm；In preparation process, after growth insulating barrier on vallum
Windowing, length of window is less than vallum length, forms face, non-implanted chamber, can reduce chamber surface current and inject density, thus reduce chamber
Face Carrier recombination, reduces the heating in face, chamber, improves its catastrophe damage threshold.
SQW is the In of undoped0.2-0.5GaAs0.02-0.1Sb quaternary compound material, thickness is 10-15nm；Barrier layer
It is five yuan of Al0.3-0.4GaInAs0.02-0.04Five yuan of compound-materials of Sb, its thickness is 10-30nm.
When SQW number is 1, described active area only has 1 SQW；As SQW number n ＞ 1, institute
The active area stated, in addition to having 1 SQW, also has n-1 SQW and n-1 AlGaInAsSb barrier layer, and quantum
Trap and the most alternate superposition of AlGaInAsSb barrier layer.
Laser instrument also includes N-type GaSb substrate, and possesses N-type on the basis of N-type GaSb substrate the most successively
Limit in GaSb cushion, N-type AlGaInAsSb lower limit layer, undoped AlGaInAsSb lower waveguide layer, p-type AlGaInAsSb
Layer, p-type GaSb cushion.By controlling extension parameter so that Lattice Matching between each up-down structure, to form height in interface
The hetero-junctions of quality, can reduce interfacial state number, reduces the intensification that interface carrier compound thermal effect causes, thus improves device
Reliability and stability.
N-type AlGaInAsSb lower limit layer is five yuan of compound-materials of AlGaInAsSb of n-type doping, and its component ratio is
Al0.5-0.7GaInAs0.02-0.04Sb, thickness is 1 μm-2 μm.
Undoped AlGaInAsSb lower waveguide layer is five yuan of compound-materials of undoped AlGaInAsSb, and component ratio is
Al03-0.4GaInAs0.02-0.04Sb, thickness is 200nm-400nm.
P-type AlGaInAsSb upper limiting layer is five yuan of compound-materials of AlGaInAsSb of p-type doping, and its component ratio is
Al0.5-0.7GaAs0.02-0.04Sb, thickness is 1 μm-2 μm.
P-type GaSb cushion is the GaSb material of p-type doping.
Described includes that N-type AlGaInAsSb lower limit layer, undoped AlGaInAsSb lower waveguide layer, active area (include
InGaAsSb SQW or AlGaInAsSb barrier layer), ducting layer, the p-type AlGaInAsSb upper limit in undoped AlGaInAsSb
Each elemental constituent and the thickness of preparative layer epitaxial growth multi-element compounds layer can be adjusted according to target wavelength.
In addition, the invention allows for a kind of semiconductor laser preparation method, comprise the steps:
Step 1: grow successively in N-type substrate N-type cushion, N-type lower limit layer, lower waveguide layer, active area, on waveguide
Layer, p-type upper limiting layer, p-type cushion；
Step 2: use photoetching technique, prepare the mask pattern of etching on surface；
Step 3: etch downwards on p-type cushion, etching depth arrives upper ducting layer, forms ridge waveguide structure；
Step 4: growth insulating barrier, and etching forms electrical pumping window at vallum；
Step 5: growth positive contact electrode；
Step 6: cathode metal is corroded into liberating tank；
Step 7: by substrate grinding and polishing to certain thickness；
Step 8: process burnishing surface with dilute hydrochloric acid solution；
Step 9: grow cathode contact electrode on burnishing surface；
Step 10: use formic acid and nitrogen two-way process gas sintering, form C-MOUNT packing forms device；
Wherein, active area is a part for semiconductor laser epitaxial layer structure, is divided by Solid Source in described step 1
Sub-beam epitaxy growing technology (MBE) grown quantum trap or barrier layer successively are formed with source region；By inductance coupling in described step 3
Close plasma etch process (ICP) on described epitaxial layer structure, etch formation wide face ridge waveguide structure；Described step
Prepare insulating barrier by the method for plasma enhanced chemical vapor phase deposition (PECVD) in rapid 4, and use reactive ion etching
(RIE) technique performs etching formation electrical pumping window in ridge waveguide structure centre position to insulating barrier.
The width of ridge waveguide structure is 100 μm-200 μm, and a length of 1mm-4mm, etching depth is to undoped
In the upper ducting layer of AlGaInAsSb.
During to substrate thinning, first substrate being carried out rough lapping, lapping liquid is that 6 μm aoxidize Al grounds travel and water with 1 to 10
Volume ratio mixed liquor, carries out fine lapping when substrate thickness is less than 150 μm, and lapping liquid is that 3 μm aoxidize Al grounds travel and water with 1 to 10
Volume ratio mixed liquor, is polished during to 120 μm, throws lapped face with rough polishing flannelette and fine polishing flannelette respectively
Light, polishing fluid is the mixed solution containing sodium hypochlorite and titanium oxide, is finally polished with deionized water.
Dilute hydrochloric acid solution processes in burnishing surface step, and dilute hydrochloric acid solution concentration is 10%-30%, and soak time is 30s-
90s。
In laser instrument sintering process, use the slicken solder In that stress is less as cementing medium, climb In, weldering for avoiding the occurrence of
Material oxidation and the generation of the solder surface violent situation of fluctuating, the gas using two-way aeration process to be passed through is respectively nitrogen and first
Acid, both can protect device cavity face not oxidized, it is also possible to the instability preventing indium solder foaming etc. from causing, be passed through the stream of gas
Amount is respectively 5-15sccm and 0.5-1sccm, and sintering temperature is 170 DEG C-190 DEG C, and sintering time is 15-25s.
, after the electrode substrate of polishing n face, process with acid solution meanwhile, surface oxidation Ga, oxidation Sb can be removed
And Sb simple substance, regrowth gold germanium nickel alloy-layer, grow titanium/platinum/gold the most successively, finally anneal, n face electrode can be improved and connect
Touch quality, form Ohmic contact, reduce device internal resistance, and device anelectrode quality can be improved with gold thread high adhesion.
Wherein the width of ridge waveguide structure is 100 μm-200 μm, a length of 1mm-4mm.Longer laser chamber length and
Wider ridge waveguide structure is conducive to improving the output of laser instrument and device heat radiation.
(3) beneficial effect
The invention provides a kind of high-power 1.8-4 μm semiconductor laser and preparation method thereof.This laser instrument is quantum
Well structure, can obtain 1.8-4 μm excitation wavelength by the component of quantum well and potential barrier；Use wide district waveguiding structure,
The active area of large volume can increase output, reduces slow axis divergence simultaneously；Use corase grind-fine grinding-rough polishing-fine polishing-water
The step of polishing, can obtain the light low density surface of evenness defects in conjunction with suitable lapping liquid and polishing fluid；Use dilute hydrochloric acid
Oxide and the antimony simple substance on surface can be removed in the grinding and polishing face of process, improves contact and alloy mass；Use formic acid and nitrogen two-way
Protective gas can improve quality and the stability of sintering process.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is the structural section figure of the present invention；
Fig. 2 is the structural section figure of active area of the present invention
Wherein, Fig. 1: 1-n face electrode, 2-N type GaSb substrate, 3-N type GaSb cushion, 4-N type AlGaInAsSb lower limit
Preparative layer, 5-undoped AlGaInAsSb lower waveguide layer, 6-active area: include InGaAsSb SQW and AlGaInAsSb potential barrier
In layer, 7-undoped type AlGaInAsSb, ducting layer, 8-insulating barrier, 9-P type AlGaInAsSb upper limiting layer, 10-P type GaSb delay
Rush layer, 11-p face electrode；
Fig. 2: 6-1 be InGaAsSb SQW, 6-2 be AlGaInAsSb barrier layer, 6-3 be InGaAsSb SQW, 6-4
It is InGaAsSb SQW for AlGaInAsSb barrier layer, 6-5.
Detailed description of the invention
For making purpose of the present invention technical scheme and advantage clearer, below in conjunction with specific embodiment, and reference
This accompanying drawing, the present invention is described in more detail.
It should be noted that the implementation not illustrating in accompanying drawing or describing, for ordinary skill people in art
Form known to Yuan.It addition, although the present invention can provide the demonstration of the parameter comprising particular value, it is to be understood that parameter is without really
Cut equal to corresponding value, but can be similar to be worth accordingly in acceptable error margin or design constraint.Additionally, it is following real
Execute the direction term mentioned in example, be only the direction with reference to accompanying drawing.Therefore, the direction term of use be used to illustrate not for
Limit the present invention.
The invention provides a kind of high-power 1.8-4 μm semiconductor laser and preparation method thereof, raw by material epitaxy
The long improvement with device technology, can prepare high-power, high stability and long-life laser instrument.
Individually below the various piece of the present embodiment 1.8-4 μm semiconductor laser is described in detail.
N-type GaSb substrate 2 is (100) face N-type GaSb material.
Epitaxial layer includes: N-type heavily doped GaSb bottom breaker 3, the AlGaInAsSb lower limit layer 4 of n-type doping, non-mix
Miscellaneous AlGaInAsSb lower waveguide layer 5, comprise InGaAsSb SQW and AlGaInAsSb barrier layer active area 6 (if single
SQW the most only comprises InGaAsSb SQW), ducting layer 7, the AlGaInAsSb of p-type doping on the AlGaInAsSb of undoped
The GaSb cushion 10 of upper limiting layer 9, p-type doping, wherein active area can include 1-3 quantum well structure.
Control extension parameter so that N-type AlGaInAsSb lower limit layer 4 and the AlGaInAsSb lower waveguide layer 5 of undoped
Lattice Matching, p-type AlGaInAsSb upper limiting layer 9 and ducting layer 7 Lattice Matching on the AlGaInAsSb of undoped, in interface
It is respectively formed high-quality hetero-junctions, interfacial state number can be reduced, reduce boundary and exempt from the intensification that Carrier recombination heat effect causes, thus
Improve the reliability of laser instrument.
P-type cushion 10 can form good Ohmic contact, the internal resistance of reduction laser instrument, and energy and gold thread with TiPtAu
High adhesion, improves device anelectrode quality.
Refer to figure, in the present embodiment, in undoped AlGaInAsSb, the part of ducting layer 7 is etched and forms ridge ripple
Lead, but the present invention is not limited thereto.Those skilled in the art should clear enough, the degree of depth of this etching can be p-type
Below AlGaInAsSb upper limiting layer 9 lower surface, and more than ducting layer 7 lower surface any on the AlGaInAsSb of undoped
The degree of depth.Generally, the depth H of this ridge waveguide is between 1.5 μm-2.4 μm, and total width is between 100 μm-200 μm
Between.
So far, the present embodiment high-power 1.8-4 μm semiconductor laser is introduced complete.
In another embodiment of the present invention, the preparation method of a kind of above-mentioned laser instrument is additionally provided.This preparation method
Including:
Step 1, deposits the N-type GaSb cushion 3 of 500nm, 2000nm on N-type GaSb substrate 2 respectively
AlGaInAsSb lower limit layer 4, the undoped AlGaInAsSb lower waveguide layer 5 of 300nm, active area 6, the undoped of 300nm
The upper ducting layer of AlGaInAsSb 7, the upper limiting layer 9 of AlGaInAsSb of p-type doping of 2000nm, the p-type of 250nm are adulterated
GaSb cushion 10.Wherein, such as accompanying drawing two, active area includes: the undoped of quantum well layer 6-1,20nm of 10nm
The quantum well layer 6-3 of AlGaInAsSb barrier layer 6-2 and 10nm.
Step 2, prepares ridge waveguide on structural material described in step 1, and this step farther includes:
Sub-step 2-1, coats photoresist on epitaxial wafer surface, by the method for common contact photolithography, makes of photolithography plate
Mask, carves slab waveguide figure.
Sub-step 2-2, does mask with photoresist, carves structural material by inductively coupled plasma (ICP) method
Erosion, thus obtain original ridge waveguide at structural material upper surface, etching depth is 2.3 μm.This ridge waveguide width is 100
μm, a length of 2mm.
Step 3, forms electrical pumping window on the ridge strip waveguide of preparation, including:
Sub-step 3-1, using plasma strengthens the method deposition SiO of chemical gaseous phase deposition2Insulating barrier 8 to 300nm.
Sub-step 3-2, the print obtained by step 3 coats photoresist, by the method for common contact-type photoetching, uses photoetching
Version makees mask, carves electrical pumping graph window.
Sub-step 3-3, does mask with photoresist, by the method for inductively coupled plasma etching in the middle of slab waveguide
SiO on position2Insulating barrier performs etching, and forms electrical pumping window, wide 90 μm of window, long 1900 μm, forms face, non-electrical pumping chamber.
Step 4, after step 3 forms electrical pumping window, at surface magnetic control sputtering Ti/Pt/Au, thickness is: 50nm/
50nm/300nm, forms anelectrode.
Step 5, coats photoresist on the print of deposition front electrode, is formed after contact photolithography exposure, development
Glue mask, corrodes with gold corrosive liquid and to dissociate with groove, anelectrode in subsequent technique so can be avoided the feelings of damage occur
Condition.Wherein gold corrosive liquid is the mixed solution of potassium iodide and iodine.
Step 6, carries out rough lapping to N-type GaSb substrate 2, and lapping liquid is that 6 μm alumina particles and water are with 1 to 10 volume ratio
Mixed liquor.Carrying out fine lapping when thickness is less than 150 μm, lapping liquid is that 3 μm aoxidize Al granules and water mixes with 1 to 10 volume ratio
Liquid, is polished during to 120 microns, is polished lapped face with rough polishing flannelette and fine polishing flannelette respectively, polishing fluid
For the mixed solution containing sodium hypochlorite and titanium oxide, finally it is polished with deionized water.
Step 7, processes 1min to the surface that grinding and polishing is good with the dilute hydrochloric acid of 1: 3, removes oxide on surface.Re-evaporation gold germanium
Ni au, thickness: 50nm/200nm, to mend the most successively and spatter Ti/Pt/Au, thickness is 50nm/50nm/300nm, and anneals.
Step 8, uses formic acid, nitrogen two-way process gas during laser instrument sintering, on the one hand can protect device cavity face not
Oxidized, on the other hand it is possible to prevent the instability that In solder foaming etc. causes.
It should be noted that this high-power 1.8-4 μm semiconductor laser and preparation method thereof to have also needed to print organic
Clean, print coats HMDS, go photoresist glue, cleavage, heat sink cleaning and evaporation multiple techniques such as solder, gold thread bonding,
It is not the emphasis place of the present invention, and here is omitted.
So far, the present embodiment high-power 1.8-4 μm semiconductor laser and preparation method thereof is introduced complete.Retouch according to this
Stating, the present invention should have been had and clear recognized accurately by those skilled in the art.
Additionally, the above-mentioned definition to each element and method be not limited in the various concrete structures mentioned in embodiment or
Person's shape, those of ordinary skill in the art can to its carry out simply known to replacement, such as:
(1) inductively coupled plasma (ICP) can also substitute by reactive ion etching (RIE) method；
(2)SiO2Insulation can substitute with SiN layer by layer；
(3) In solder can replace with gold tin solder；
In sum, the invention provides a kind of high-power 1.8-4 μm semiconductor laser and preparation method thereof.This laser
Device is quantum well structure, can obtain 1.8-4 μm excitation wavelength by the component of quantum well and potential barrier；Use wide district ripple
Guide structure, the active area of large volume can increase output, reduce slow axis divergence simultaneously；Employing corase grind-fine grinding-rough polishing-
The step of fine polishing-water polishing, can obtain the light low density surface of evenness defects in conjunction with suitable lapping liquid and polishing fluid；With
Dilute hydrochloric acid processes grinding and polishing face can remove oxide and the antimony simple substance on surface, improves contact and alloy mass；Use formic acid and nitrogen
Gas two-way protective gas can improve quality and the stability of sintering process.
Above-described two specific embodiments, have carried out entering one to the purpose of the present invention, technical scheme and beneficial effect
Step describes in detail, be it should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Bright, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the present invention
Protection domain within.
Claims (12)
1. a semiconductor laser, including: ducting layer, insulating barrier in active area, undoped AlGaInAsSb, active area is positioned at
In undoped AlGaInAsSb below ducting layer, insulating barrier is positioned at above both, it is characterised in that
Described active area includes: InGaAsSb SQW and AlGaInAsSb barrier layer；
In described undoped AlGaInAsSb, ducting layer upper surface has the face waveguide of ridge width；
There is on described insulating barrier electrical pumping window.
Laser instrument the most according to claim 1, it is characterised in that in described undoped AlGaInAsSb, ducting layer is non-
Five yuan of compound-materials of AlGaInAsSb of doping, its component ratio is Al0.3-0.4GaAs0.02-0.04Sb, thickness is 200-
400nm。
Laser instrument the most according to claim 1, it is characterised in that described insulating barrier is SiO2Or SiN, thickness is
100-300nm。
Laser instrument the most according to claim 1, it is characterised in that described SQW is the In of undoped0.2- 0.5GaAs0.02-0.1Sb quaternary compound material, thickness is 10-15nm；Described barrier layer is five yuan of Al0.3- 0.4GaInAs0.02-0.04Five yuan of compound-materials of Sb, its thickness is 10-30nm.
Laser instrument the most according to claim 1, it is characterised in that when SQW number is 1, described active area only has
There is 1 SQW；When SQW number is n ＞ 1, described active area, in addition to having 1 SQW, also has n-1
Individual SQW and n-1 AlGaInAsSb barrier layer, and SQW and the most alternate superposition of AlGaInAsSb barrier layer.
Laser instrument the most according to claim 1, it is characterised in that described laser instrument also includes N-type GaSb substrate, and
N-type GaSb cushion, N-type AlGaInAsSb lower limit layer, undoped is possessed the most successively on the basis of N-type GaSb substrate
AlGaInAsSb lower waveguide layer, p-type AlGaInAsSb upper limiting layer, p-type GaSb cushion.
7. according to the laser instrument described in claim 1 or 6, it is characterised in that described includes restriction under N-type AlGaInAsSb
Layer, undoped AlGaInAsSb lower waveguide layer, active area (including InGaAsSb SQW or AlGaInAsSb barrier layer), non-mix
Ducting layer on miscellaneous AlGaInAsSb, each elemental constituent of p-type AlGaInAsSb upper limiting layer epitaxial growth multi-element compounds layer and
Thickness can be adjusted according to target wavelength.
8. a semiconductor laser preparation method, comprises the steps:
Step 1: grow successively in N-type substrate N-type cushion, N-type lower limit layer, lower waveguide layer, active area, on ducting layer, P
Type upper limiting layer, p-type cushion epitaxial layer structure；
Step 2: etch downwards on p-type cushion, etching depth arrives upper ducting layer, forms ridge waveguide structure；
Step 3: grow insulating barrier in ridge waveguide structure, and etching forms electrical pumping window at vallum；
Step 4: substrate is ground-polishes, and gained burnishing surface is carried out dilute hydrochloric acid solution process；
Step 5: use high-sintering process, to form packing forms device；
It is characterized in that, by Solid Source molecular beam epitaxial growth technology grown quantum trap or potential barrier successively in described step 1
Layer is formed with source region；Described step 2 is carved on described epitaxial layer structure by inductively coupled plasma etching technique
Erosion forms wide face ridge waveguide structure；By reactive ion etching process in ridge waveguide structure interposition in described step 3
Put and insulating barrier is performed etching formation electrical pumping window.
Laser instrument preparation method the most according to claim 8, it is characterised in that described active area has 1 or n ＞ 1
SQW, during and if only if SQW number is n ＞ 1, AlGaInAsSb barrier layer is deposited between adjacent quantum wells.
Laser instrument preparation method the most according to claim 8, it is characterised in that the width of described ridge waveguide structure
Being 100 μm-200 μm, a length of 1mm-4mm, on etching depth to undoped AlGaInAsSb in ducting layer.
11. laser instrument preparation methoies according to claim 8, it is characterised in that described dilute hydrochloric acid solution processes polishing
During face, dilute hydrochloric acid solution concentration is 10%-30%, and soak time is 30s-90s.
12. laser instrument preparation methoies according to claim 8, it is characterised in that described laser instrument high-sintering process
During use two-way aeration process, the gas being passed through is respectively nitrogen and formic acid, and the flow being passed through gas is respectively 5-
15sccm and 0.5-1sccm, sintering temperature is 170 DEG C-190 DEG C, and sintering time is 15-25s.
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| CN111416274A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
| CN111585170A (en) * | 2020-05-21 | 2020-08-25 | 四川大学 | Semiconductor laser and manufacturing method thereof |
| CN112323022A (en) * | 2021-01-04 | 2021-02-05 | 度亘激光技术（苏州）有限公司 | Vapor deposition method for semiconductor device |
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| CN111416274A (en) * | 2020-02-27 | 2020-07-14 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
| CN111585170A (en) * | 2020-05-21 | 2020-08-25 | 四川大学 | Semiconductor laser and manufacturing method thereof |
| CN112323022A (en) * | 2021-01-04 | 2021-02-05 | 度亘激光技术（苏州）有限公司 | Vapor deposition method for semiconductor device |
| CN112323022B (en) * | 2021-01-04 | 2021-03-19 | 度亘激光技术（苏州）有限公司 | Vapor deposition method for semiconductor device |
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