CN111585170A - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereof Download PDFInfo
- Publication number
- CN111585170A CN111585170A CN202010438454.2A CN202010438454A CN111585170A CN 111585170 A CN111585170 A CN 111585170A CN 202010438454 A CN202010438454 A CN 202010438454A CN 111585170 A CN111585170 A CN 111585170A
- Authority
- CN
- China
- Prior art keywords
- layer
- etching
- epitaxial wafer
- gas
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor laser and a manufacturing method thereof, wherein the method comprises the following steps: forming an epitaxial layer on the first surface of the substrate to obtain an epitaxial wafer; forming a ridge pattern mask layer on the epitaxial wafer; placing the epitaxial wafer with the formed ridge pattern mask layer in a reaction chamber with protective gas for etching; introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer; removing the ridge pattern mask layer on the epitaxial wafer; wherein the shielding gas and the second gas are non-oxygen-containing gases. The epitaxial wafer with the ridge-shaped pattern mask layer is placed in a reaction chamber with protective gas for etching, so that an etched surface and an etched wall cannot be oxidized when the epitaxial layer is etched; and after the etching is finished, an anti-oxidation layer grows on the etching surface and the etching wall of the epitaxial wafer, and the etching surface and the etching wall of the epitaxial wafer can be further prevented from being oxidized by air after the epitaxial wafer is taken out of the reaction chamber in a mode that the anti-oxidation layer covers the etching surface and the etching wall.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a semiconductor laser and a manufacturing method thereof.
Background
The semiconductor laser is an important photoelectric device and has wide application in the fields of industry, national defense and the like. The lateral waveguide structure of the semiconductor laser includes a gain waveguide structure, a ridge waveguide structure, a buried waveguide structure, and the like, among which the ridge waveguide structure is most common. The conventional ridge waveguide structure is manufactured as follows: after the growth of the semiconductor laser wafer is finished, photoetching is carried out to obtain a photoresist mask, then the epitaxial layer is corroded by a wet method to manufacture a ridge structure, and finally the photoresist is removed.
The traditional manufacturing method of the ridge waveguide structure has the following problems: the waveguide layer and confinement layer of semiconductor laser are usually made of easily oxidizable materials such as aluminum-containing materials (e.g., AlGaAs, AlGaInP, etc.), and when the ridge is made by wet etching, the Al-containing material is exposed to the solution and air, which results in oxidation of the Al-containing material. When the semiconductor laser is in an operating state, under thermal, optical, and electrical stimuli, these oxygen atoms may move to the light emitting region of the semiconductor laser, causing device failure.
Disclosure of Invention
In view of this, embodiments of the present invention provide a semiconductor laser and a method for fabricating the same, so as to solve the problem that an oxidizable material is easily oxidized during a fabrication process in a conventional method for fabricating a ridge waveguide structure.
According to a first aspect, an embodiment of the present invention provides a method for manufacturing a semiconductor laser, including: forming an epitaxial layer on the first surface of the substrate to obtain an epitaxial wafer; forming a ridge pattern mask layer on the epitaxial wafer; placing the epitaxial wafer with the formed ridge pattern mask layer in a reaction chamber with protective gas for etching; introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer; removing the ridge pattern mask layer on the epitaxial wafer; wherein the shielding gas and the second gas are non-oxygen-containing gases.
Optionally, the etching of the epitaxial wafer with the ridge pattern mask layer in the reaction chamber with the protective gas includes: to form a ridge pattern mask layerThe epitaxial wafer is placed in an MOCVD reaction chamber of protective gas with first preset temperature and first preset flow for etching, and the etching gas is CBr4Or CCl4。
Optionally, the first preset temperature is 650-850 ℃, and the shielding gas is AsH3The first preset flow is 10 sccm-300 sccm, and the etching gas passes through H2And loading, wherein the flow rate of the etching gas is 100 sccm-1000 sccm.
Optionally, before introducing the second gas and growing the oxidation preventing layer on the etched surface and the etched wall of the epitaxial wafer, the method for manufacturing the semiconductor laser further includes: and closing the etching gas, adjusting the temperature of the reaction chamber to a second preset temperature, and adjusting the flow of the protective gas to a second preset flow.
Optionally, the second gas is TMGa, the second predetermined temperature is 500 ℃ to 700 ℃, and the second predetermined flow rate is 10sccm to 120 sccm.
Optionally, the method for manufacturing a semiconductor laser further includes: and forming an insulating layer on the epitaxial wafer, and manufacturing an electrode.
Optionally, the mask layer is made of SiN, and the forming of the ridge pattern mask layer on the epitaxial wafer includes: depositing SiN on the first surface of the epitaxial wafer by utilizing PECVD; and transferring the ridge pattern to SiN by photoetching and etching to form a ridge pattern mask layer.
Optionally, the epitaxial layer includes a buffer layer, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, and a contact layer from bottom to top, the epitaxial layer is formed on the first surface of the substrate, including: the substrate is placed in an MOCVD reaction chamber, and a buffer layer, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a contact layer are grown layer by layer.
Optionally, the epitaxial wafer is etched to a depth to the upper confinement layer.
According to a second aspect, an embodiment of the present invention provides a semiconductor laser including: a substrate; an epitaxial layer disposed on the substrate, the epitaxial layer including a ridge waveguide structure; and an oxidation preventing layer provided on an outer surface of the ridge waveguide structure, wherein the ridge waveguide structure and the oxidation preventing layer are formed by the method for manufacturing the semiconductor laser according to the first aspect or any of the embodiments of the first aspect.
According to the semiconductor laser and the manufacturing method thereof provided by the embodiment of the invention, the epitaxial layer is formed on the first surface of the substrate to prepare the epitaxial wafer, the ridge pattern mask layer is formed on the epitaxial wafer, and the epitaxial wafer on which the ridge pattern mask layer is formed is placed in the reaction chamber with the protective gas for etching, wherein the protective gas is non-oxygen-containing gas, so that the etching surface and the etching wall of the epitaxial layer cannot be oxidized when the epitaxial layer is etched; and after the etching is finished, introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer, wherein the second gas is a non-oxygen-containing gas, and can further prevent the etching surface and the etching wall from being oxidized by air after the epitaxial wafer is taken out of the reaction chamber and in the subsequent process by covering the etching surface and the etching wall by the anti-oxidation layer, so that the possibility of oxygen impurities diffusing to a light emitting region in the working process of the semiconductor laser is reduced, the service life and the reliability of the semiconductor laser are improved, and the problem that the easily-oxidized material is easily oxidized in the manufacturing process by the traditional ridge waveguide structure manufacturing method is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 shows a flow chart of a method of fabricating a semiconductor laser of an embodiment of the invention;
fig. 2 shows a schematic structural view of a semiconductor laser after an epitaxial layer is formed on a first surface of a substrate according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a semiconductor laser device after a ridge pattern mask layer is fabricated according to an embodiment of the present invention;
FIG. 4 shows a schematic structural diagram of an etched semiconductor laser according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a semiconductor laser device after an oxidation preventing layer is grown according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a semiconductor laser device after a ridge pattern mask layer on an epitaxial wafer is removed according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a semiconductor laser after an insulating layer and electrodes are formed on an epitaxial wafer according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a method for manufacturing a semiconductor laser, as shown in fig. 1, including:
s101, forming an epitaxial layer on the first surface of the substrate 11 to obtain an epitaxial wafer; specifically, an epitaxial layer may be formed on the first surface of the substrate 11 by epitaxial growth, sputtering, photolithography, etching, etc., and the structure of the epitaxial wafer is shown in fig. 2. The epitaxial layer may specifically include a bottom-up buffer layer 12, a lower confinement layer 13, a lower waveguide layer 14, an active layer 15, an upper waveguide layer 16, an upper confinement layer 17, and a contact layer 18. The active layer 15 may include a lower quantum barrier layer 151, a quantum well layer 152, and an upper quantum barrier layer 153 from bottom to top.
S102, forming a ridge pattern mask layer 19 on the epitaxial wafer; specifically, in order to manufacture the ridge waveguide structure, a mask layer containing a ridge pattern may be formed on the epitaxial wafer, and then the ridge waveguide structure may be manufactured by etching. A ridge pattern mask layer 19 may be formed on the epitaxial wafer by epitaxial growth, deposition, sputtering, photolithography, etching, etc., and the resulting structure of the ridge pattern mask layer is shown in fig. 3.
S103, placing the epitaxial wafer with the ridge-shaped pattern mask layer 19 in a reaction chamber with protective gas for etching; wherein the protective gas is a non-oxygen-containing gas. Specifically, the upper waveguide layer 16 and the upper limiting layer 17 in the epitaxial layer usually contain Al, and in order to prevent the Al in the upper limiting layer 17 from being oxidized when the epitaxial layer is etched to the upper limiting layer 17, the step of etching the epitaxial wafer may be performed in a reaction chamber with a protective gas, so that the etched surface and the etched wall of the upper limiting layer 17 are in an oxygen-free environment, so that the Al in the upper limiting layer 17 is not oxidized, a ridge waveguide structure is formed in the upper limiting layer 17 and the contact layer 18 in the etched epitaxial wafer, and the structure of the etched epitaxial wafer is as shown in fig. 4.
S104, introducing a second gas, and growing an anti-oxidation layer 20 on the etching surface and the etching wall of the epitaxial wafer; wherein the second gas is a non-oxygen containing gas. Specifically, after the etching is completed, the epitaxial wafer needs to be taken out from the reaction chamber, and then the subsequent processes are performed, and if the epitaxial wafer is directly taken out after the etching is completed, the epitaxial wafer is directly exposed to the water and oxygen environments in the subsequent processes, and the etching wall and the etching surface of the epitaxial wafer are still oxidized. Therefore, in order to prevent the etched surface and the etched wall of the epitaxial wafer from being directly exposed to the water and oxygen environment and thus oxidized in the subsequent process, before the epitaxial wafer is taken out, the second gas may be introduced to mix with the protective gas, and then an anti-oxidation layer 20 may be grown on the etched surface and the etched wall of the epitaxial wafer to cover the etched surface and the etched wall of the epitaxial wafer and prevent the Al in the upper limiting layer 17 from being oxidized, and the structure of the epitaxial wafer after the anti-oxidation layer 20 is grown is shown in fig. 5.
And S105, removing the ridge pattern mask layer 19 on the epitaxial wafer. Specifically, the epitaxial wafer is taken out of the reaction chamber, and the ridge pattern mask layer 19 may be selectively removed using a BOE solution. The ridge pattern mask 19 on the epitaxial wafer is removed, and a semiconductor laser wafer is obtained as shown in fig. 6. So that subsequent conventional steps can be performed to form the semiconductor laser.
According to the manufacturing method of the semiconductor laser, the epitaxial layer is formed on the first surface of the substrate, the epitaxial wafer is manufactured, the ridge pattern mask layer is formed on the epitaxial wafer, the epitaxial wafer with the ridge pattern mask layer is placed in the reaction chamber with the protective gas for etching, wherein the protective gas is non-oxygen-containing gas, so that the etching surface and the etching wall of the epitaxial layer cannot be oxidized when the epitaxial layer is etched; and after the etching is finished, introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer, wherein the second gas is a non-oxygen-containing gas, and can further prevent the etching surface and the etching wall from being oxidized by air after the epitaxial wafer is taken out of the reaction chamber and in the subsequent process by covering the etching surface and the etching wall by the anti-oxidation layer, so that the possibility of oxygen impurities diffusing to a light emitting region in the working process of the semiconductor laser is reduced, the service life and the reliability of the semiconductor laser are improved, and the problem that the easily-oxidized material is easily oxidized in the manufacturing process by the traditional ridge waveguide structure manufacturing method is solved.
In an alternative embodiment, the epitaxial wafer on which the ridge pattern mask layer 19 is formed is placed in a reaction chamber with a protective gas for etching, including: placing the epitaxial wafer with the formed ridge pattern mask layer in an MOCVD reaction chamber with protective gas at a first preset temperature and a first preset flow rate for etching, wherein the etching gas is CBr4Or CCl4. Specifically, the metal organic compound chemical vapor deposition (MOCVD) has high controllability, can provide a high temperature and a closed oxygen-free space environment, so that the etching step of the epitaxial wafer can be performed in an MOCVD reaction chamber, protective gas and etching gas are filled in the MOCVD reaction chamber, and the etching rate of the etching gas on the epitaxial wafer is accurately controlled by controlling parameters such as the flow of the protective gas, the flow of the etching gas, the temperature of the reaction chamber and the like until a specific ridge depth is obtained.
By passing through the MOCVD reaction chamber, by CBr4Or CCl4The etching rate and depth of each ridge waveguide structure on the wafer can be effectively controlled by etching the epitaxial wafer to manufacture the ridge waveguide structure, so that the threshold current and far field of the manufactured semiconductor laser can be controlledVarious performance parameters such as divergence angle are stable. And the etching process is carried out in the atmosphere of protective gas, so that the etching surface and the etching wall of the epitaxial wafer can not be oxidized during etching.
In an alternative embodiment, the first predetermined temperature is in the range of 650 ℃ to 850 ℃ and the shielding gas is AsH3The first preset flow is 10 sccm-300 sccm, and the etching gas passes through H2And loading, wherein the flow rate of the etching gas is 100 sccm-1000 sccm. Specifically, the etching rate of the etching gas to the epitaxial wafer can be controlled to be 0.1 nm/s-3 nm/s by controlling the temperature of the reaction chamber to be 650-850 ℃, the flow rate of the protective gas to be 10 sccm-300 sccm and the flow rate of the etching gas to be 100 sccm-1000 sccm, so that the depth of the ridge can be effectively controlled by controlling the etching time, and the specific depth of the ridge can be obtained. The etching gas is CBr4Or CCl4，CBr4Or CCl4Is solid at ordinary temperature, and therefore, H can be used2As a carrier gas, through H2Will CBr4Or CCl4Carried into the reaction chamber.
In an optional embodiment, before introducing the second gas and growing the oxidation preventing layer on the etched surface and the etched wall of the epitaxial wafer, the method for manufacturing the semiconductor laser further includes: and closing the etching gas, adjusting the temperature of the reaction chamber to a second preset temperature, and adjusting the flow of the protective gas to a second preset flow. Specifically, after the etching is completed, the etching gas needs to be turned off. And the condition for growing the anti-oxidation layer is not consistent with the condition during etching, and the condition of the reaction chamber can reach the condition for growing the anti-oxidation layer by adjusting the temperature of the reaction chamber, the flow of the protective gas and the like.
By closing the etching gas, adjusting the temperature of the reaction chamber, the flow of the protective gas and the like, the reaction chamber can reach the condition of growing the anti-oxidation layer, and meanwhile, the anti-oxidation layer can continue to grow in the reaction chamber after the etching is finished, so that the etching surface and the etching wall of the epitaxial wafer are prevented from being oxidized.
In an alternative embodiment, the second gas is TMGa, the second predetermined temperature is 500-700 ℃, and the second predetermined flow rate is 10-120 sccm. In particular, in the reaction chamberThe protective gas is AsH3Introducing TMGa gas to make AsH3Reacting with TMGa to form GaAs on the etching surface and etching wall of the epitaxial wafer, thereby covering the exposed etching surface and etching wall and preventing the etching surface and etching wall of the epitaxial wafer from being oxidized.
In an alternative embodiment, the method for fabricating a semiconductor laser further includes: and forming an insulating layer on the epitaxial wafer, and manufacturing an electrode. Specifically, after the ridge waveguide structure is formed, SiO can be deposited according to the manufacturing process of the conventional semiconductor laser2The dielectric layer 21 is thinned, a p-electrode 22 is made, and an n-electrode 23 is made on the second surface of the substrate, as shown in fig. 7. And then, cleaving the semiconductor laser wafer to obtain the semiconductor laser chip.
In an alternative embodiment, the mask layer is made of SiN, and the step of forming the ridge pattern mask layer on the epitaxial wafer includes: depositing SiN on the first surface of the epitaxial wafer by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method; and transferring the ridge pattern to SiN by photoetching and etching to form a ridge pattern mask layer. Specifically, since the epitaxial layer needs to be prevented from being oxidized during etching, the mask layer is made of a non-oxygen-containing material, and in order to enable the mask layer to withstand high temperature during etching, the mask layer may be made of SiN.
In an alternative embodiment, the epitaxial layer includes a bottom-up buffer layer 12, a lower confinement layer 13, a lower waveguide layer 14, an active layer 15, an upper waveguide layer 16, an upper confinement layer 17, and a contact layer 18, and the epitaxial layer is formed on the first surface of the substrate 11, and includes: the substrate is placed in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and a buffer layer 12, a lower limiting layer 13, a lower waveguide layer 14, an active layer 15, an upper waveguide layer 16, an upper limiting layer 17 and a contact layer 18 are grown layer by layer. The material of the substrate 11 may be gallium arsenide (GaAs). The material of buffer layer 12 may be GaAs. The material of the lower confinement layer 13 may be AlGaAs. The material of the lower waveguide layer 14 may be AlGaAs. The active layer 15 may include a lower quantum barrier layer 151, a quantum well layer 152, and an upper quantum barrier layer 153 from bottom to top, the material of the lower quantum barrier layer 151 and the upper quantum barrier layer 153 may be GaAs, and the material of the quantum well layer 152 may be InGaAs. The material of upper waveguide layer 16 may be AlGaAs. The material of the upper confinement layer 17 may be AlGaAs. The material of the contact layer 18 may be GaAs.
In an alternative embodiment, the epitaxial wafer is etched to a depth up to the upper confinement layer 17. Specifically, the epitaxial wafer is etched to a depth up to upper confinement layer 17, but not up to upper waveguide layer 16.
An embodiment of the present invention further provides a semiconductor laser, as shown in fig. 7, including: a substrate 11; an epitaxial layer disposed on the substrate 11, the epitaxial layer including a ridge waveguide structure; and an oxidation preventing layer 20 provided on an outer surface of the ridge waveguide structure, wherein the ridge waveguide structure and the oxidation preventing layer 20 are formed by a method of manufacturing a semiconductor laser as described in any of the above embodiments. The detailed description of the specific implementation manner is given in the above embodiments of the method for manufacturing the semiconductor laser, and is not repeated here.
According to the semiconductor laser provided by the embodiment of the invention, the epitaxial layer is formed on the first surface of the substrate to prepare the epitaxial wafer, the ridge pattern mask layer is formed on the epitaxial wafer, and the epitaxial wafer on which the ridge pattern mask layer is formed is placed in the reaction chamber with the protective gas for etching, wherein the protective gas is non-oxygen-containing gas, so that the etching surface and the etching wall of the epitaxial layer cannot be oxidized when the epitaxial layer is etched; and after the etching is finished, introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer, wherein the second gas is a non-oxygen-containing gas, and can further prevent the etching surface and the etching wall from being oxidized by air after the epitaxial wafer is taken out of the reaction chamber and in the subsequent process by covering the etching surface and the etching wall by the anti-oxidation layer, so that the possibility of oxygen impurities diffusing to a light emitting region in the working process of the semiconductor laser is reduced, the service life and the reliability of the semiconductor laser are improved, and the problem that the easily-oxidized material is easily oxidized in the manufacturing process by the traditional ridge waveguide structure manufacturing method is solved.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (10)
1. A method of fabricating a semiconductor laser, comprising:
forming an epitaxial layer on the first surface of the substrate to obtain an epitaxial wafer;
forming a ridge pattern mask layer on the epitaxial wafer;
placing the epitaxial wafer with the ridge pattern mask layer in a reaction chamber with protective gas for etching;
introducing a second gas, and growing an anti-oxidation layer on the etching surface and the etching wall of the epitaxial wafer;
removing the ridge pattern mask layer on the epitaxial wafer; wherein the shielding gas and the second gas are non-oxygen-containing gases.
2. A method of fabricating a semiconductor laser as claimed in claim 1 wherein said etching the epitaxial wafer on which the ridge patterned mask layer is formed in a chamber containing a protective gas comprises:
placing the epitaxial wafer with the ridge pattern mask layer in an MOCVD reaction chamber with protective gas at a first preset temperature and a first preset flow rate for etching, wherein the etching gas is CBr4Or CCl4。
3. A method of fabricating a semiconductor laser as claimed in claim 2 wherein,
the first preset temperature is 650-850 ℃, and the protective gas is AsH3The first preset flow is 10 sccm-300 sccm, and the etching gas passes through H2And loading, wherein the flow rate of the etching gas is 100 sccm-1000 sccm.
4. The method for fabricating a semiconductor laser as claimed in claim 1, further comprising, before the step of introducing the second gas to grow an oxidation preventing layer on the etched surface and the etched wall of the epitaxial wafer, the step of:
and closing the etching gas, adjusting the temperature of the reaction chamber to a second preset temperature, and adjusting the flow of the protective gas to a second preset flow.
5. The method of fabricating a semiconductor laser as claimed in claim 4 wherein the second gas is TMGa, the second predetermined temperature is 500-700 ℃, and the second predetermined flow rate is 10-120 seem.
6. A method of fabricating a semiconductor laser as claimed in claim 1 further comprising:
and forming an insulating layer on the epitaxial wafer, and manufacturing an electrode.
7. A method of fabricating a semiconductor laser as claimed in claim 1 wherein said mask layer is of SiN and said forming a ridge patterned mask layer on said epitaxial wafer comprises:
depositing SiN on the first surface of the epitaxial wafer by utilizing PECVD;
and transferring the ridge pattern to the SiN by photoetching and etching to form a ridge pattern mask layer.
8. A method of fabricating a semiconductor laser as claimed in claim 1 wherein the epitaxial layer comprises a bottom-up buffer layer, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, a contact layer, and wherein forming an epitaxial layer on the first surface of the substrate comprises:
and putting the substrate into an MOCVD reaction chamber, and growing a buffer layer, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer and a contact layer by layer.
9. A method of fabricating a semiconductor laser as claimed in claim 8 wherein the epitaxial wafer is etched to a depth to the upper confinement layer.
10. A semiconductor laser, comprising:
a substrate;
an epitaxial layer disposed on the substrate, the epitaxial layer including a ridge waveguide structure;
the anti-oxidation layer is arranged on the outer surface of the ridge-shaped waveguide structure;
the ridge waveguide structure and the oxidation prevention layer are formed by the method for manufacturing a semiconductor laser according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010438454.2A CN111585170B (en) | 2020-05-21 | 2020-05-21 | Semiconductor laser and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010438454.2A CN111585170B (en) | 2020-05-21 | 2020-05-21 | Semiconductor laser and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111585170A true CN111585170A (en) | 2020-08-25 |
| CN111585170B CN111585170B (en) | 2021-07-13 |
Family
ID=72111029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010438454.2A Active CN111585170B (en) | 2020-05-21 | 2020-05-21 | Semiconductor laser and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111585170B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113783107A (en) * | 2021-09-14 | 2021-12-10 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of quantum cascade laser |
| CN114089598A (en) * | 2022-01-24 | 2022-02-25 | 浙江光特科技有限公司 | Method for manufacturing semiconductor device |
| CN114583556A (en) * | 2022-05-05 | 2022-06-03 | 苏州长光华芯光电技术股份有限公司 | Longitudinal carrier modulation high-power semiconductor light-emitting chip and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228267A (en) * | 2003-01-22 | 2004-08-12 | Opnext Japan Inc | Semiconductor optical element and method for manufacturing the same |
| US20070045633A1 (en) * | 2005-07-25 | 2007-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical device having an improved current blocking layer and manufacturing method thereof |
| CN102136677A (en) * | 2006-08-23 | 2011-07-27 | 株式会社理光 | Surface-emitting laser array, optical scanning device, and image forming device |
| CN104466677A (en) * | 2013-09-20 | 2015-03-25 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device and semiconductor device |
| CN106300015A (en) * | 2016-09-30 | 2017-01-04 | 中国科学院半导体研究所 | A kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof |
| DE102017130131A1 (en) * | 2017-12-15 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Process for the production of optoelectronic semiconductor components and optoelectronic semiconductor component |
| CN110277733A (en) * | 2018-03-14 | 2019-09-24 | 中国科学院半导体研究所 | Semiconductor device chip structure and preparation method thereof |
| CN110808533A (en) * | 2019-10-14 | 2020-02-18 | 湖北光安伦科技有限公司 | High-temperature ICP (inductively coupled plasma) etching method for aluminum-containing material in high-speed DFB (distributed feed Back) chip |
-
2020
- 2020-05-21 CN CN202010438454.2A patent/CN111585170B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004228267A (en) * | 2003-01-22 | 2004-08-12 | Opnext Japan Inc | Semiconductor optical element and method for manufacturing the same |
| US20070045633A1 (en) * | 2005-07-25 | 2007-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor optical device having an improved current blocking layer and manufacturing method thereof |
| CN102136677A (en) * | 2006-08-23 | 2011-07-27 | 株式会社理光 | Surface-emitting laser array, optical scanning device, and image forming device |
| CN104466677A (en) * | 2013-09-20 | 2015-03-25 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device and semiconductor device |
| CN106300015A (en) * | 2016-09-30 | 2017-01-04 | 中国科学院半导体研究所 | A kind of high-power 1.8 4 μm semiconductor lasers and preparation method thereof |
| DE102017130131A1 (en) * | 2017-12-15 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Process for the production of optoelectronic semiconductor components and optoelectronic semiconductor component |
| CN110277733A (en) * | 2018-03-14 | 2019-09-24 | 中国科学院半导体研究所 | Semiconductor device chip structure and preparation method thereof |
| CN110808533A (en) * | 2019-10-14 | 2020-02-18 | 湖北光安伦科技有限公司 | High-temperature ICP (inductively coupled plasma) etching method for aluminum-containing material in high-speed DFB (distributed feed Back) chip |
Non-Patent Citations (1)
| Title |
|---|
| 林世鸣: "低阈值红光垂直腔面发射激光器", 《高技术通讯》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113783107A (en) * | 2021-09-14 | 2021-12-10 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of quantum cascade laser |
| CN113783107B (en) * | 2021-09-14 | 2022-12-02 | 苏州长光华芯光电技术股份有限公司 | Manufacturing method of quantum cascade laser |
| CN114089598A (en) * | 2022-01-24 | 2022-02-25 | 浙江光特科技有限公司 | Method for manufacturing semiconductor device |
| CN114583556A (en) * | 2022-05-05 | 2022-06-03 | 苏州长光华芯光电技术股份有限公司 | Longitudinal carrier modulation high-power semiconductor light-emitting chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111585170B (en) | 2021-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111585170B (en) | Semiconductor laser and manufacturing method thereof | |
| US6320209B1 (en) | Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same | |
| US8012780B2 (en) | Method of fabricating semiconductor laser | |
| US6620641B2 (en) | Semiconductor light emitting device and its manufacturing method | |
| JP2003332688A (en) | Iii nitride based compound semiconductor laser | |
| JP2007533120A (en) | Embedded heterostructure devices fabricated by single step MOCVD | |
| JP2000082863A (en) | Manufacture of semiconductor light emitting element | |
| US7998770B2 (en) | Method for forming a semiconductor light-emitting device | |
| JP4751124B2 (en) | Method for fabricating a semiconductor light emitting device | |
| US20080283852A1 (en) | Light-emitting device and a method for producing the same | |
| JPH06244490A (en) | Semiconductor laser and its manufacture | |
| CN101484983A (en) | Etching method, etching mask and method for manufacturing semiconductor device using the same | |
| JP2000164512A (en) | Growing method of nitride iii-v compound semiconductor layer, manufacture of semiconductor device and semiconductor light emitting device | |
| KR100639747B1 (en) | Semiconductor laser, semiconductor device and their manufacturing methods | |
| JP2000077336A (en) | Substrate for semiconductor growth, manufacture thereof, and semiconductor device | |
| JP4465890B2 (en) | Manufacturing method of semiconductor device | |
| CN115528537A (en) | Method for manufacturing GaAs-based narrow-linewidth red laser chip | |
| WO2007126091A1 (en) | Etching method, etching mask and method for manufacturing semiconductor device using the same | |
| JPH10303502A (en) | Gallium nitride compound semiconductor light emitting element and its manufacture | |
| JP4379469B2 (en) | Group III nitride semiconductor etching method | |
| JP2001007443A (en) | Manufacture of semiconductor light emitting device | |
| CN110061416B (en) | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser | |
| JP3963233B2 (en) | Gallium nitride compound semiconductor light emitting device and method for manufacturing the same | |
| JP7043802B2 (en) | Method for manufacturing a vertical resonance type surface emitting laser and a vertical resonance type surface emitting laser | |
| WO2021212598A1 (en) | 808 nm laser epitaxial wafer and preparation method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 610065, No. 24, south section of first ring road, Chengdu, Sichuan, Wuhou District Applicant after: SICHUAN University Applicant after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 610065, No. 24, south section of first ring road, Chengdu, Sichuan, Wuhou District Applicant before: SICHUAN University Applicant before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |