CN114089598A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
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- CN114089598A CN114089598A CN202210076663.6A CN202210076663A CN114089598A CN 114089598 A CN114089598 A CN 114089598A CN 202210076663 A CN202210076663 A CN 202210076663A CN 114089598 A CN114089598 A CN 114089598A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention provides a manufacturing method of a semiconductor device, which is applied to the field of semiconductors. In the manufacturing method of the semiconductor device provided by the invention, the heater for adjusting the temperature of the ridge waveguide (ridge waveguide structure) in the optical modulator is arranged on one side surface of the ridge waveguide, so that the temperature generated by the heater can be uniformly transmitted from the top to the bottom of the ridge waveguide, and the problems that the temperature generated by the heater is not uniformly distributed from the top to the bottom of the ridge waveguide due to the fact that the heater is arranged at the top of the ridge waveguide in the prior art, the refractive index of the ridge waveguide is influenced, and the optical loss of the ridge waveguide is serious are solved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device.
Background
An optical modulator is one example of optical communication that uses a heater assembly. The heater is typically used to keep the optical modulator at a constant temperature or to adjust the operating wavelength of the optical modulator by using its temperature-controllable characteristics. The waveguide is a transmission structure for transmitting optical signals in the optical modulator, wherein if the heater in the optical modulator is improperly designed, the optical signal may have excessive optical loss during the output process. Currently, existing waveguide structures may include a stripe waveguide structure and a ridge waveguide structure.
For a ridge waveguide, the heater is typically placed on top of the ridge waveguide, or over the entire waveguide layer surface of the ridge waveguide. If the heater is placed on top of the ridge waveguide, the temperature distribution generated by the heater may be very uneven from the top of the ridge waveguide to the bottom of the ridge waveguide, and the temperature variation may be too high for micron-scale ridge waveguide heights. In addition, since temperature affects the refractive index of the ridge waveguide, this temperature gradient will pull the optical signal up from where it should normally be, resulting in optical loss. Meanwhile, when the micron-sized heater is located on top of the ridge waveguide, such narrow width may cause large variation in heater performance due to the process window. If the heater is disposed over the entire surface of the waveguide layer of the ridge waveguide, too much metal area may come into contact with the ridge waveguide, thereby affecting the refractive index of the ridge waveguide and also causing excessive optical loss.
Disclosure of Invention
The invention aims to provide a manufacturing method of a semiconductor device, which aims to solve the problems that in the prior art, the transmission temperature distribution of the temperature generated by a heater from the top to the bottom of a ridge waveguide is uneven, the refractive index of the ridge waveguide is influenced, and the optical loss of the ridge waveguide is serious because the heater is arranged at the top of the ridge waveguide.
In order to solve the above technical problem, the present invention provides a method for manufacturing a semiconductor device, and specifically, the method includes:
providing a semiconductor substrate, and sequentially forming an epitaxial layer, a silicon dioxide insulating layer and a first photoresist layer on the surface of the semiconductor substrate.
And etching the silicon dioxide insulating layer and the epitaxial layer with partial thickness by taking the first photoresist layer as a mask to form a ridge waveguide structure.
And removing the first photoresist layer and the silicon dioxide insulating layer to expose the top surface and the side wall of the ridge waveguide structure.
And forming a dielectric material layer and a heater material layer, wherein the dielectric material layer covers the top surface and the side wall of the ridge waveguide structure and extends to cover the surface of the exposed remaining part of the epitaxial layer at the two sides of the ridge waveguide structure, and the heater material layer covers the surface of the dielectric material layer.
And selectively removing part of the heater material layer, and enabling the rest heater material layer to cover one side wall of the ridge waveguide structure so as to form the heater for controlling the temperature of the ridge waveguide structure.
Further, the semiconductor substrate may be a silicon-on-insulator substrate, the silicon-on-insulator substrate may have a bottom semiconductor layer, a buried insulating layer, and a top semiconductor layer stacked in this order from bottom to top, the material of the bottom semiconductor layer and the material of the top semiconductor layer may include silicon, and the material of the buried insulating layer may include silicon dioxide.
Further, after the ridge waveguide structure is formed and before the silicon dioxide insulating layer is removed, the manufacturing method provided by the present invention may further include:
and forming a second photoresist layer on part of the top surface of the silicon dioxide insulating layer and the surface of the exposed residual epitaxial layer on one side of the ridge waveguide structure.
And performing a first ion implantation process on the semiconductor substrate by using the second photoresist layer as a mask and using N-type ions or P-type ions to form an N-type junction or a P-type junction of the ridge waveguide structure on the side wall of the other side of the ridge waveguide structure and on the surface of the exposed residual epitaxial layer of the side.
And removing the second photoresist layer, and forming a third photoresist layer on part of the top surface of the silicon dioxide insulating layer and on the surface of the remaining part of the epitaxial layer exposed from the other side of the ridge waveguide structure without the first ion implantation process.
And performing a second ion implantation process on the semiconductor substrate by using P-type ions or N-type ions by using the third photoresist layer as a mask, so as to form a P-type junction or an N-type junction of the ridge waveguide structure on the side wall of the other side of the ridge waveguide structure, which is not subjected to the first ion implantation process, and on the surface of the exposed remaining part of the epitaxial layer on the side wall.
Further, the N-type ions may include at least one of phosphorus, arsenic, and antimony, and the P-type ions may include at least one of boron, boron fluoride, indium, and gallium.
Further, the dielectric material layer may have a single-layer film structure or a double-layer film structure, and the dielectric material layer may be made of silicon oxide or silicon nitride.
Furthermore, the thickness of the dielectric material layer can be 0.3-1 μm.
Further, the material of the heater material layer may be at least one of titanium, titanium nitride, tungsten, or nichrome.
Furthermore, the thickness of the heater material layer can be 0.2-1 μm.
Further, after selectively removing a portion of the heater material layer, the remaining heater material layer may also extend to cover a portion of the top surface of the ridge waveguide structure and a portion of the surface of the remaining portion of the epitaxial layer exposed at one side of the ridge waveguide structure, so that the heater formed on one side of the ridge waveguide structure is in a zigzag shape.
Further, the process of removing a portion of the heater material layer may be a dry etching process or a wet etching process.
Compared with the prior art, the technical scheme of the invention has at least one of the following beneficial effects:
in the manufacturing method of the semiconductor device provided by the invention, the heater for adjusting the temperature of the ridge waveguide (ridge waveguide structure) in the optical modulator is arranged on one side surface of the ridge waveguide, so that the temperature generated by the heater can be uniformly transmitted from the top to the bottom of the ridge waveguide, and the problems that the temperature generated by the heater is not uniformly distributed from the top to the bottom of the ridge waveguide due to the fact that the heater is arranged at the top of the ridge waveguide in the prior art, the refractive index of the ridge waveguide is influenced, and the optical loss of the ridge waveguide is serious are solved.
In addition, in the manufacturing method provided by the invention, the heater is only arranged on one side surface of the ridge waveguide, so that the problems of parasitic capacitance caused by arranging the heaters on two sides of the ridge waveguide, and reduction of device performance and optical signal transmission speed of the ridge waveguide and the optical modulator can be solved.
Drawings
Fig. 1 is a schematic diagram of a structure of a ridge waveguide and a heater in the related art.
Fig. 2 is a flow chart of a method for manufacturing a semiconductor device according to the present invention.
Fig. 3a to 3h are schematic structural diagrams of a semiconductor device in a manufacturing process according to an embodiment of the invention.
Wherein the reference numbers are as follows:
10-ridge waveguide; 20-a heater;
100-a semiconductor substrate; 101-a bottom semiconductor layer;
102-an insulating buried layer; 103-a top semiconductor layer;
110-an epitaxial layer; 120/120' -an insulating layer of silicon dioxide;
130-a first photoresist layer; 140-a second photoresist layer;
150-a third photoresist layer; 160-a layer of dielectric material;
170/170' -heater material layer; 251-ridge waveguide structure;
251a/251 b-P-type junction or N-type junction of ridge waveguide structure.
Detailed Description
As described in the background, currently, for a ridge waveguide, a heater is usually disposed on the top of the ridge waveguide, as shown in fig. 1, and fig. 1 is a schematic structural diagram of a ridge waveguide and a heater in the prior art. Where 10 is a ridge waveguide, 20 and the heater, or heaters, are coated over the entire waveguide layer surface of the ridge waveguide. If the heater is placed on top of the ridge waveguide, the temperature distribution generated by the heater may be very uneven from the top of the ridge waveguide to the bottom of the ridge waveguide, and the temperature variation may be too high for micron-scale ridge waveguide heights. In addition, since temperature affects the refractive index of the ridge waveguide, this temperature gradient will pull the optical signal up from where it should normally be, resulting in optical loss. Meanwhile, when the micron-sized heater is located on top of the ridge waveguide, such narrow width may cause large variation in heater performance due to the process window. If the heater is disposed over the entire surface of the waveguide layer of the ridge waveguide, too much metal area may come into contact with the ridge waveguide, thereby affecting the refractive index of the ridge waveguide and also causing excessive optical loss.
In addition, when the heater is arranged at the top of the ridge waveguide in the prior art, the performance of the heater is limited by the line width size at the top of the ridge waveguide, so that the performance of the heater is unstable. For example, a heater with a width of 1 micron and a thickness of 0.3 micron is located on top of the ridge waveguide, and such a narrow width may cause a large variation due to process window (e.g., control of photolithography); if the photoresist width varies by 15% (width is 1 +/-0.15 microns), the width is directly reflected in the resistance variation of the heater, which results in a resistance variation of +/-15% and ultimately +/-15% variation affecting the heater performance.
In view of the above problems in the prior art, the present inventors have proposed that a heater for adjusting the temperature of a ridge waveguide (ridge waveguide structure) in an optical modulator may be disposed on a side surface of the ridge waveguide, so that the temperature generated by the heater may be uniformly transmitted from the top to the bottom of the ridge waveguide, thereby avoiding the problems in the prior art that the temperature generated by the heater is not uniformly distributed from the top to the bottom of the ridge waveguide due to the heater being mounted on the top of the ridge waveguide, thereby affecting the refractive index of the ridge waveguide and causing the optical loss of the ridge waveguide to be severe.
Based on the above, the invention provides a manufacturing method of a semiconductor device, which aims to solve the problems that in the prior art, as a heater is arranged at the top of a ridge waveguide, the transmission temperature distribution of the temperature generated by the heater from the top to the bottom of the ridge waveguide is uneven, the refractive index of the ridge waveguide is influenced, and the optical loss of the ridge waveguide is serious.
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention. Specifically, the manufacturing method of the semiconductor device at least comprises the following steps:
step S100, providing a semiconductor substrate, and sequentially forming an epitaxial layer, a silicon dioxide insulating layer, and a first photoresist layer on a surface of the semiconductor substrate.
And S200, taking the first photoresist layer as a mask, and etching the silicon dioxide insulating layer and the epitaxial layer with partial thickness to form a ridge waveguide structure.
Step S300, removing the first photoresist layer and the silicon dioxide insulating layer to expose the top surface and the sidewall of the ridge waveguide structure.
Step S400, forming a dielectric material layer and a heater material layer, where the dielectric material layer covers the top surface and the sidewall of the ridge waveguide structure and extends to cover the surface of the remaining portion of the epitaxial layer exposed at both sides of the ridge waveguide structure, and the heater material layer covers the surface of the dielectric material layer.
Step S500, selectively removing a portion of the heater material layer, and covering the remaining heater material layer on a sidewall of the ridge waveguide structure to form a heater for controlling the temperature of the ridge waveguide structure.
That is, in the method for manufacturing a semiconductor device according to the present invention, the heater for adjusting the temperature of the ridge waveguide (ridge waveguide structure) in the optical modulator is disposed on one side of the ridge waveguide, so that the temperature generated by the heater can be uniformly transmitted from the top to the bottom of the ridge waveguide, thereby avoiding the problems in the prior art that the temperature generated by the heater is not uniformly distributed from the top to the bottom of the ridge waveguide due to the heater being mounted on the top of the ridge waveguide, which affects the refractive index of the ridge waveguide and causes the optical loss of the ridge waveguide to be serious.
The following describes a method for manufacturing a semiconductor device according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 3a to fig. 3h are schematic structural diagrams of a semiconductor device in a manufacturing process according to an embodiment of the invention.
In step S100, specifically referring to fig. 3a, a semiconductor substrate 100 is provided, the semiconductor substrate is a silicon-on-insulator substrate SOI, which has a bottom semiconductor layer 101, a buried insulating layer 102 and a top semiconductor layer 103 stacked in sequence from bottom to top, the material of the bottom semiconductor layer 101 and the top semiconductor layer 103 may be at least one of silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, and the material of the buried insulating layer 102 may include silicon dioxide. Further, an epitaxial layer 110, a silicon dioxide insulating layer 120, and a first photoresist layer 130 are sequentially stacked and formed on the surface of the semiconductor substrate 100 in a direction away from the semiconductor substrate 100. Wherein the first photoresist layer 130 defines a pattern structure of a ridge waveguide structure to be formed.
In the present embodiment, since the semiconductor substrate 100 for forming the ridge waveguide structure is a SOI, and the buried insulating layer 102 (silicon dioxide) in the SOI can be used as an isolation layer for optical signals, it is ensured that the optical signals can travel in the ridge waveguide (ridge waveguide structure) and have a certain transmission rate.
In step S200, referring to fig. 3b specifically, the first photoresist layer 130 is used as a mask, and the silicon dioxide insulating layer 120 and a portion of the epitaxial layer 110 are etched to form a ridge waveguide structure 251.
In this embodiment, after the epitaxial layer 110, the silicon dioxide insulating layer 120 and the first photoresist layer 130 are formed in the step S100, the first photoresist layer 130 is used as a mask, and a dry etching process, a wet etching process or a hybrid process of the dry etching process and the wet etching process is used to etch only the silicon dioxide insulating layer 120 and a part of the thickness of the epitaxial layer 110, so as to form the ridge waveguide structure 251 on the surface of the remaining epitaxial layer 110'. The width of the top of the formed ridge waveguide structure 251 may be determined according to actual conditions, and the present invention is not particularly limited thereto.
In step S300, referring to fig. 3c to 3f, the first photoresist layer 130 and the silicon dioxide insulating layer 120' are removed to expose the top surface and the sidewalls of the ridge waveguide structure 251.
In this embodiment, after step S200, the first photoresist layer 130 may be removed, and then photoresist layers are respectively formed on a portion of the top surface of the ridge waveguide structure 251 and on the surfaces of the remaining portions of the epitaxial layer 110' located at both sides thereof, and then an ion implantation process is performed on both sides thereof, so as to form a P-type junction on one sidewall of the ridge waveguide structure 251 and an N-type junction on the other sidewall thereof. After the photoresist layer serving as a shielding layer in the ion implantation process is removed, the silicon dioxide insulating layer 120' is further removed, so that the top surface of the ridge waveguide structure 251 is protected during the process of respectively performing ion implantation on the two sidewalls of the ridge waveguide structure 251.
Specifically, in the embodiment of the present invention, a specific implementation manner after the ridge waveguide structure 251 is formed and before the silicon dioxide insulating layer 120' is removed is provided, which may include the following steps:
in step S301, referring to fig. 3d in particular, a second photoresist layer 140 is formed on a portion of the top surface of the silicon dioxide insulating layer 120 'and the surface of the remaining portion of the epitaxial layer 110' a exposed at one side of the ridge waveguide structure 251.
Step S302, referring to fig. 3e specifically, with the second photoresist layer 140 as a mask, a first ion implantation process is performed on the semiconductor substrate 100 by using N-type ions or P-type ions, so as to form an N-type junction (P-type junction) 251a of the ridge waveguide structure 251 on the sidewall of the other side of the ridge waveguide structure 251 and on the surface of the remaining portion of the epitaxial layer 110' exposed at the side.
Step S303, referring to fig. 3f specifically, the second photoresist layer 140 is removed, and a third photoresist layer 150 is formed on a portion of the top surface of the silicon dioxide insulating layer 120 'and on the surface of the remaining portion of the epitaxial layer 110' exposed at the other side of the ridge waveguide structure 251 without the first ion implantation process.
Step S304, referring to fig. 3f continuously, performing a second ion implantation process on the semiconductor substrate by using P-type ions or N-type ions with the third photoresist layer 150 as a mask, so as to form a P-type junction (N-type junction) 251b of the ridge waveguide structure 251 on the sidewall of the other side of the ridge waveguide structure 251 on which the first ion implantation process is not performed and on the surface of the remaining portion of the epitaxial layer 110' b exposed on the side.
Wherein the N-type ions may include at least one of phosphorus, arsenic and antimony, and the P-type ions may include at least one of boron, boron fluoride, indium and gallium.
In this embodiment, one side of the ridge waveguide structure 251 may be sequentially masked by the second photoresist layer 140 and the third photoresist layer 150, so that the ion implantation is performed on the other side of the ridge waveguide structure 251 exposed each time, and a P-type junction and an N-type junction with a certain thickness may be formed on both sidewalls of the ridge waveguide structure 251 by controlling the dose of the ion implantation. In the two ion implantation processes, the top surface of the ridge waveguide structure 251 is always shielded by the silicon dioxide insulating layer 120', so that the problem of diffusion of the implanted ions in the substrate below the top surface of the ridge waveguide structure 251 in the process of forming the P-type junction and the N-type junction of the ridge waveguide structure 251 is solved, and the performance of the ridge waveguide structure 251 is ensured.
In step S400, referring specifically to fig. 3g, a dielectric material layer 160 and a heater material layer 170 are formed, wherein the dielectric material layer 160 covers the top surface and the sidewalls of the ridge waveguide structure 251 and extends to cover the surface of the remaining portion of the epitaxial layer 110' exposed at both sides of the ridge waveguide structure 251, and the heater material layer 170 covers the surface of the dielectric material layer 160.
In this embodiment, the dielectric material layer 160 may have a single-layer film structure or a double-layer film structure; for example, when the dielectric material layer 160 has a single-layer film structure, it may be a silicon oxide film layer or a silicon nitride film layer, and when the dielectric material layer 160 has a double-layer film structure, it may be a stacked structure of a silicon oxide film layer and a silicon nitride film layer. Moreover, no matter whether the dielectric material layer 160 is a single-layer film structure or a double-layer film structure, in order to achieve an effective heat transfer function and not to apply the stress of the heater material layer 170 to the ridge waveguide 251, the total thickness of the dielectric material layer 160 in the embodiment of the present invention ranges from 0.3 μm to 1 μm.
Further, the material of the heater material layer 170 is at least one of titanium, titanium nitride, tungsten, or nichrome, and the thickness of the heater material layer 170 is determined according to the resistivity of the material and the designed range of the thermal energy to be generated, so the thickness of the heater material layer 170 in the embodiment of the present invention ranges from 0.2 μm to 1 μm.
In step S500, referring specifically to fig. 3h, a portion of the heater material layer 170 is selectively removed, and a remaining heater material layer 170' is coated on a sidewall of the ridge waveguide structure 251 to form a heater for controlling the temperature of the ridge waveguide structure 251.
In this embodiment, a patterned photoresist layer (not shown) may be formed on the surface of the heater material layer 170 after step S400, and the patterned photoresist layer (not shown) defines the shape of the heater to be formed on one side of the ridge waveguide structure 251 in step S500, and then the heater of the shape is formed by using an etching process.
Illustratively, in the embodiment of the present invention, after selectively removing a portion of the heater material layer 170, the remaining heater material layer 170 'further extends to cover a portion of the top surface of the ridge waveguide structure 251 and a portion of the surface of the epitaxial layer 110' of the remaining portion exposed at one side of the ridge waveguide structure 251, so that the heater formed on one side of the ridge waveguide structure 251 is shaped like a "Z".
The shape of the heater provided by the present invention is not particularly limited as long as it covers one side surface of the ridge waveguide structure 251, and the specific shape is not particularly limited.
In summary, in the method for manufacturing a semiconductor device according to the present invention, the heater for adjusting the temperature of the ridge waveguide (ridge waveguide structure) in the optical modulator is disposed on one side of the ridge waveguide, so that the temperature generated by the heater can be uniformly transmitted from the top to the bottom of the ridge waveguide, thereby avoiding the problems in the prior art that the temperature generated by the heater is not uniformly distributed from the top to the bottom of the ridge waveguide due to the heater being mounted on the top of the ridge waveguide, and the refractive index of the ridge waveguide is affected and the optical loss of the ridge waveguide is severe.
In addition, in the manufacturing method provided by the invention, the heater is only arranged on one side surface of the ridge waveguide, so that the problems of parasitic capacitance caused by arranging the heaters on two sides of the ridge waveguide, and reduction of device performance and optical signal transmission speed of the ridge waveguide and the optical modulator can be solved.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the present invention.
Further, it will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
Spatially relative terms, such as "below … …," "above … …," "below," "above … …," "above," "upper" and "lower," etc., may be used herein for ease of description to describe one element or feature's spatial relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below … …" can include both an orientation of "above … …" and "below … …". The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate, and sequentially forming an epitaxial layer, a silicon dioxide insulating layer and a first photoresist layer on the surface of the semiconductor substrate;
taking the first photoresist layer as a mask, and etching the silicon dioxide insulating layer and the epitaxial layer with partial thickness to form a ridge waveguide structure;
removing the first photoresist layer and the silicon dioxide insulating layer to expose the top surface and the side wall of the ridge waveguide structure;
forming a dielectric material layer and a heater material layer, wherein the dielectric material layer covers the top surface and the side wall of the ridge waveguide structure and extends to cover the surface of the exposed remaining part of the epitaxial layer at the two sides of the ridge waveguide structure, and the heater material layer covers the surface of the dielectric material layer;
and selectively removing part of the heater material layer, and enabling the rest heater material layer to cover one side wall of the ridge waveguide structure so as to form the heater for controlling the temperature of the ridge waveguide structure.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is a silicon-on-insulator substrate having a bottom semiconductor layer, a buried insulating layer, and a top semiconductor layer stacked in this order from bottom to top, wherein a material of the bottom semiconductor layer and the top semiconductor layer comprises silicon, and a material of the buried insulating layer comprises silicon dioxide.
3. The method for manufacturing a semiconductor device according to claim 1, wherein after the forming of the ridge waveguide structure and before the removing of the silicon dioxide insulating layer, the method further comprises:
forming a second photoresist layer on part of the top surface of the silicon dioxide insulating layer and the surface of the exposed remaining part of the epitaxial layer on one side of the ridge waveguide structure;
performing a first ion implantation process on the semiconductor substrate by using the second photoresist layer as a mask and using N-type ions or P-type ions to form an N-type junction or a P-type junction of the ridge waveguide structure on the side wall of the other side of the ridge waveguide structure and on the surface of the exposed residual epitaxial layer of the side;
removing the second photoresist layer, and forming a third photoresist layer on part of the top surface of the silicon dioxide insulating layer and on the surface of the remaining part of the epitaxial layer exposed from the other side of the ridge waveguide structure without the first ion implantation process;
and performing a second ion implantation process on the semiconductor substrate by using P-type ions or N-type ions by using the third photoresist layer as a mask, so as to form a P-type junction or an N-type junction of the ridge waveguide structure on the side wall of the other side of the ridge waveguide structure, which is not subjected to the first ion implantation process, and on the surface of the exposed remaining part of the epitaxial layer on the side wall.
4. The method for manufacturing a semiconductor device according to claim 3, wherein the N-type ions include at least one of phosphorus, arsenic, and antimony, and the P-type ions include at least one of boron, boron fluoride, indium, and gallium.
5. The method for manufacturing a semiconductor device according to claim 1, wherein the dielectric material layer has a single-layer film structure or a double-layer film structure, and the dielectric material layer is made of silicon oxide or silicon nitride.
6. The method for manufacturing a semiconductor device according to claim 5, wherein the dielectric material layer has a thickness of 0.3 μm to 1 μm.
7. The method of manufacturing a semiconductor device according to claim 1, wherein a material of the heater material layer is at least one of titanium, titanium nitride, tungsten, or nichrome.
8. The method for manufacturing a semiconductor device according to claim 7, wherein the heater material layer has a thickness of 0.2 μm to 1 μm.
9. The method for manufacturing a semiconductor device according to claim 1, wherein after selectively removing a portion of the heater material layer, the remaining heater material layer further extends over a portion of the top surface of the ridge waveguide structure and a portion of the surface of the epitaxial layer of the remaining portion exposed at one side of the ridge waveguide structure, so that the heater formed on one side of the ridge waveguide structure is shaped like a zigzag.
10. The manufacturing method of a semiconductor device according to claim 1, wherein the process of removing part of the heater material layer is a dry etching process or a wet etching process.
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