CN111200235A - Preparation method and device of on-chip integrated AlGaN pulse laser - Google Patents

Preparation method and device of on-chip integrated AlGaN pulse laser Download PDF

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Publication number
CN111200235A
CN111200235A CN202010027346.6A CN202010027346A CN111200235A CN 111200235 A CN111200235 A CN 111200235A CN 202010027346 A CN202010027346 A CN 202010027346A CN 111200235 A CN111200235 A CN 111200235A
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algan
layer
region
pulse laser
chip integrated
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康俊杰
袁冶
王新强
王维昀
王后锦
李永德
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Songshan Lake Materials Laboratory
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Songshan Lake Materials Laboratory
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a method for preparing an on-chip integrated AlGaN pulse laser and a device thereof, the method provided by the invention has simple steps and is easy to realize, an epitaxial structure with an AlGaN waveguide layer and an AlGaN carrier limiting layer is grown, and a chip process is combined to prepare a device with a multi-section functional area, the device is provided with a ridge waveguide area, a conical amplification area and an absorption modulation area, the functions of all the areas are different, the size of the device can be effectively reduced by utilizing the on-chip integrated AlGaN ultraviolet amplification technology, the wavelength is reduced, and the pulse power output of hundred watt level can be achieved through testing; the substrate with high heat dissipation coefficient is adopted for packaging and heat dissipation treatment, the heat dissipation effect is good, and normal work of the device is ensured. The device, namely the laser, adopts a tapered light amplification technology to realize on-chip integrated amplification of pulse laser, can generate pulse light, has the wavelength of an ultraviolet band, and can be applied to the fields of biological medical treatment, ultraviolet communication, spectral analysis and the like.

Description

Preparation method and device of on-chip integrated AlGaN pulse laser
Technical Field
The invention relates to the technical field of AlGaN semiconductor ultraviolet pulse lasers, in particular to a preparation method of an on-chip integrated AlGaN pulse laser.
Background
In recent years, GaN-based semiconductor lasers have attracted extensive attention from researchers due to their strong application demands in the fields of display, lighting, communications, and the like. Limited by the substrate technology and growth technology of epitaxial materials, advanced technology of GaN-based semiconductor lasers has been slowly advanced and mostly focused on continuous current injection conditions, while only a few reports have been made on pulsed power lasers. In 2012, japanese researchers report a pulse power laser with a peak power of hundred watt and a frequency of GHz under an external cavity amplification condition, but the pulse power laser adopts the external cavity amplification, is not compact enough in structure, belongs to a visible light band, and only adopts a GaN material. Therefore, an on-chip integrated AlGaN ultraviolet amplification technology is provided, the size of a device is effectively reduced, the wavelength is reduced, and the preparation method of the on-chip integrated AlGaN pulse laser with high output power is required in the world.
Disclosure of Invention
In view of the above-mentioned disadvantages, the present invention aims to provide a method for manufacturing an on-chip integrated AlGaN pulse laser. The device prepared by the invention can be applied to the fields of biomedical treatment, ultraviolet communication, spectral analysis and the like.
In order to achieve the purpose, the invention provides the technical scheme that: a preparation method of an on-chip integrated AlGaN pulse laser comprises the following steps:
a preparation method of an on-chip integrated AlGaN pulse laser comprises the following steps: growing a multilayer AlGaN epitaxial structure on an AlN substrate by using MOCVD or MBE material growing equipment, wherein each layer of the multilayer AlGaN epitaxial structure sequentially comprises an AlN buffer layer, an intrinsic AlGaN layer, an N-type AlGaN cladding layer, an AlGaN waveguide layer, an AlGaN quantum well, an AlGaN carrier limiting layer and an AlGaN waveguideThe Al component is adjusted between 0 and 1 according to the light-emitting requirement and the refractive index requirement of the material, the thickness is 1nm to 1 mu m, and the doping concentration is 1e16 to 1e19cm-3(ii) a On the basis of finishing the growth of the epitaxial material, the required device is prepared by adopting a chip preparation process, and the technology specifically comprises the processes of photoetching, etching, evaporation, dissociation and coating.
In a preferred embodiment of the present invention, the device has a ridge waveguide region, a tapered amplification region and an absorption modulation region.
As a preferred scheme of the present invention, the chip preparation process specifically comprises the following steps:
s1: deposition of SiO2Or the SiN mask layer is 1nm-1 mu m thick and is mainly used for deep etching of AlGaN as a hard mask;
s2: photoetching each region of the device, and etching the mask layer and the AlGaN layer by adopting ICP-RIE (inductively coupled plasma-reactive ion etching); by BCl3、Cl2、Ar2Removing unnecessary parts in the multilayer AlGaN epitaxial structure as etching gas to form a required pattern;
s3: carrying out secondary photoetching to deposit a P-type ohmic contact electrode layer; the material can be selected from various metals with high work function, so that the effective injection of current is finally realized, and the material is selected from Pd, Ti, Al, Ag, Cr, Au, Pt, Ni, Cu and the like, and the thickness is 10nm-100 nm.
S4: performing three times of photoetching to deposit SiO2Or a SiN electrical isolation layer; the thickness is 1nm-1 μm, so that the device is effectively protected, the leakage and oxidation are reduced, and the service life of the device is prolonged;
s5: thinning and polishing the AlN substrate, controlling the thickness to be 50-150 mu m, and depositing an n-type ohmic contact electrode layer with the thickness of 10-100 nm; the selection of the material can be the combination of various metals with high work functions, and the effective injection of current is finally realized, and the selection of the material comprises Pd, Ti, Al, Ag, Cr, A mu, Pt, Ni, Cu and the like;
s6: dissociating the device, and then evaporating a reflecting film on the cavity surface to form a film with the thickness of 10nm-100 nm; the material may be selected from SiO2、HfO2、Ta2O5、Al2O3、TiO2The period is 10-40;
s7: and performing heat dissipation packaging on the device. In order to realize the normal work of the device, the device needs heat dissipation packaging, and an AlN or Cu or SiC substrate with the thickness of 10 mu m-5mm is adopted; the device is then encapsulated on an AlN or SiC or Si heat sink substrate.
A device manufactured by the preparation method of the on-chip integrated AlGaN pulse laser comprises three electric control areas, specifically a ridge waveguide area, a conical amplification area and an absorption modulation area which are sequentially arranged, wherein the functions of the areas are different; the width of the ridge waveguide region is 5-200 μm, the length of the ridge waveguide region is 100-2 mm, the width of the absorption modulation region is 5-200 μm, the length of the absorption modulation region is 100-2 mm, the angle of the conical amplification region is 2-6 degrees, and the length of the conical amplification region is 100-2 mm. On the basis of the completion of packaging, the performance of the device is tested in a three-electrode injection mode, wherein injection current is applied to a ridge region and an amplification region, reverse voltage is applied to an absorption modulation region, the voltage is changed between 0 and 20V, and finally the output characteristic is analyzed by using a spectrum analyzer.
The invention has the beneficial effects that: the method provided by the invention has simple steps and is easy to realize, an epitaxial structure with an AlGaN waveguide layer and an AlGaN carrier limiting layer is grown, a device with a multi-section functional region is prepared by combining a chip process, the device has a ridge waveguide region, a conical amplification region and an absorption modulation region, the functions of all the regions are different, the size of the device can be effectively reduced by utilizing the AlGaN ultraviolet amplification technology integrated on a chip, the wavelength is reduced, and the pulse power output of hundreds of watts can be achieved by testing; the substrate with high heat dissipation coefficient is adopted for packaging and heat dissipation treatment, the heat dissipation effect is good, and normal work of the device is ensured. The device prepared by the invention can be applied to the fields of biological medical treatment, ultraviolet communication, spectral analysis and the like.
The invention is further illustrated by the following structural drawings and examples.
Drawings
Fig. 1 is a schematic view of an AlGaN epitaxial structure.
FIG. 2 is a process flow diagram of the present invention.
Fig. 3 is a schematic front view of an on-chip AlGaN pulse laser according to the present invention.
Fig. 4 is a schematic side view of an on-chip integrated AlGaN pulse laser according to the present invention.
Detailed Description
The method for preparing the on-chip integrated AlGaN pulse laser provided by the embodiment includes the following steps: growing a plurality of layers of AlGaN epitaxial structures 11 on an AlN substrate 1 by adopting MOCVD or MBE material growing equipment, wherein the AlN buffer layer 2, the intrinsic AlGaN layer 3, the N-type AlGaN cladding layer 4, the AlGaN waveguide layer 5, the AlGaN quantum well 6, the AlGaN carrier limiting layer 7, the AlGaN waveguide layer 8, the p-type AlGaN cladding layer 9 and the p-type AlGaN ohmic contact layer 10 are arranged in sequence, the Al component is adjusted between 0 and 1 according to the light-emitting requirement and the refractive index requirement of the material, the thickness is 1nm to 1 mu m, and the doping concentration is 1e16 to 1e19cm-3(ii) a On the basis of finishing the growth of the epitaxial material, the required device is prepared by adopting a chip preparation process, and the technology specifically comprises the processes of photoetching, etching, evaporation, dissociation and coating. The ohmic contact metal system of vapor plating adopts one or a plurality of combinations of Pd, Ti, Al, Ag, Cr, Au, Pt, Ni and Cu, and the thickness is 10nm-2 μm. The film system adopted by the coating film is designed to be SiO2、HfO2、Ta2O5、Al2O3、TiO2The thickness of the material is 10nm-100nm, and the period is 10-40.
Specifically, the chip preparation process specifically comprises the following steps:
s1: deposition of SiO2Or the SiN mask layer is 1nm-1 mu m thick and is mainly used for deep etching of AlGaN as a hard mask;
s2: photoetching each region of the device, and etching the mask layer and the multilayer AlGaN epitaxial structure 11 by adopting ICP-RIE; by BCl3、Cl2、Ar2Removing unnecessary parts in the multilayer AlGaN epitaxial structure 11 as etching gas to form a required pattern;
s3: carrying out secondary photoetching to deposit the P-type ohmic contact electrode layer 12; the material can be selected from various metals with high work function, so that the effective injection of current is finally realized, and the material is selected from Pd, Ti, Al, Ag, Cr, Au, Pt, Ni, Cu and the like, and the thickness is 10nm-100 nm.
S4: performing three times of photoetching to deposit SiO2Or SiN electrical isolation layer 13; the thickness is 1nm-1 μm, so that the device is effectively protected, the leakage and oxidation are reduced, and the service life of the device is prolonged;
s5: thinning and polishing the AlN substrate 1, controlling the thickness to be 50-150 mu m, and depositing an n-type ohmic contact electrode layer 14 with the thickness of 10nm-100 nm; the selection of the material can be the combination of various metals with high work functions, and the effective injection of current is finally realized, and the selection of the material comprises Pd, Ti, Al, Ag, Cr, A mu, Pt, Ni, Cu and the like;
s6: dissociating the device, and then evaporating the reflecting film on the cavity surface;
s7: and performing heat dissipation packaging on the device. In order to realize the normal work of the device, the device needs heat dissipation packaging, an AlN or Cu or SiC substrate is adopted, and the thickness is preferably 10 mu m-5 mm; the device is then encapsulated on an AlN or SiC or Si heat sink substrate 24.
A device manufactured by adopting the preparation method of the on-chip integrated AlGaN pulse laser comprises three electric control areas, specifically a ridge waveguide area 21, a conical amplification area 22 and an absorption modulation area 23 which are sequentially arranged on a heat dissipation substrate 24, wherein the functions of the areas are different; the width of the ridge waveguide region 21 is 5-200 μm, the length is 100-2 mm, the width of the absorption modulation region 23 is 5-200 μm, the length is 100-2 mm, the angle of the cone amplification region 22 is 2-6 degrees, and the length is 100-2 mm. The device adopts a separated electrode design, the injection current of the ridge waveguide region 21 and the conical amplification region 22 is 0 to 10A, and the working voltage of the absorption modulation region 23 is 0 to-20V.
On the basis of the completion of packaging, the performance of the device is tested in a three-electrode injection mode, wherein injection current is added to a ridge waveguide area 21 and a conical amplification area 22, reverse voltage is added to an absorption modulation area 23, the voltage is changed between 0V and 20V, and finally an optical spectrum analyzer is adopted to analyze the output characteristics.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. It is within the scope of the present invention to employ the same or similar steps and devices as described in the above embodiments of the present invention.

Claims (10)

1. A preparation method of an on-chip integrated AlGaN pulse laser is characterized by comprising the following steps: the method comprises the steps of growing a plurality of layers of AlGaN epitaxial structures on an AlN substrate by using MOCVD or MBE material growing equipment, sequentially arranging an AlN buffer layer, an intrinsic AlGaN layer, an N-type AlGaN cladding layer, an AlGaN waveguide layer, an AlGaN quantum well, an AlGaN carrier limiting layer, an AlGaN waveguide layer, a p-type AlGaN cladding layer and a p-type AlGaN ohmic contact layer on each layer of the plurality of layers of AlGaN epitaxial structures, and then preparing the device with the required pattern by using a chip preparation process.
2. The method of claim 1, wherein the device has a ridge waveguide region, a tapered amplification region and an absorption modulation region.
3. The method of claim 2, wherein the ridge waveguide region has a width of 5 μm to 200 μm and a length of 100 μm to 2 mm.
4. The method of claim 2, wherein the width of the absorption modulation region is 5 μm to 200 μm, and the length thereof is 100 μm to 2 mm.
5. The method of claim 2, wherein the angle of the tapered amplification region is 2-6 ° and the length is 100 μm-2 mm.
6. The method for preparing an on-chip integrated AlGaN pulse laser according to any one of claims 2 to 5, wherein the chip preparation process specifically comprises the following steps:
s1: deposition of SiO2Or a SiN mask layer;
s2: photoetching each region of the device, and etching the mask layer and the multilayer AlGaN epitaxial structure by adopting ICP-RIE (inductively coupled plasma-reactive ion etching);
s3: carrying out secondary photoetching to deposit a P-type ohmic contact electrode layer;
s4: performing three times of photoetching to deposit SiO2Or a SiN electrical isolation layer;
s5: thinning and polishing the AlN substrate, and depositing an n-type ohmic contact electrode layer;
s6: dissociating the device, and then evaporating the reflecting film on the cavity surface;
s7: and performing heat dissipation packaging on the device.
7. The method of claim 6, wherein BCl is used in step S23、Cl2、Ar2Unnecessary portions of the multilayer AlGaN epitaxial structure are removed as an etching gas to form a desired pattern.
8. The method of manufacturing an on-chip AlGaN pulse laser according to claim 6, wherein the material used in step S3 is a combination of a plurality of high work function metals.
9. The method of manufacturing an on-chip integrated AlGaN pulse laser according to claim 6, wherein the device is packaged on an AlN or SiC or Si heat dissipation substrate in the step S7.
10. A device manufactured by the method for manufacturing an on-chip integrated AlGaN pulse laser according to any one of claims 1 to 9, wherein the device comprises a ridge waveguide region, a tapered amplification region and an absorption modulation region, which are sequentially arranged, wherein the width of the ridge waveguide region is 5 μm to 200 μm, the length of the ridge waveguide region is 100 μm to 2mm, the width of the absorption modulation region is 5 μm to 200 μm, the length of the absorption modulation region is 100 μm to 2mm, the angle of the tapered amplification region is 2 to 6 °, and the length of the tapered amplification region is 100 μm to 2 mm.
CN202010027346.6A 2020-01-10 2020-01-10 Preparation method and device of on-chip integrated AlGaN pulse laser Pending CN111200235A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111803797A (en) * 2020-06-10 2020-10-23 殷硕仑 Short-wave infrared integrated medical light source and application
WO2022184108A1 (en) * 2021-03-04 2022-09-09 华为技术有限公司 Modulating amplifier, light-emitting apparatus, optical network unit, and optical line terminal

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CN106300016A (en) * 2016-10-25 2017-01-04 中国科学院半导体研究所 GaSb base single tube two-region structure short-pulse laser and preparation method thereof
CN109888612A (en) * 2019-04-17 2019-06-14 中国科学院长春光学精密机械与物理研究所 Electric pump deep ultraviolet AlGaN semiconductor laser and preparation method thereof

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CN101689749A (en) * 2007-05-31 2010-03-31 康宁股份有限公司 Gan lasers on ain substrates and methods of fabrication
CN101710670A (en) * 2009-05-15 2010-05-19 长春理工大学 808 nm emission wavelength tapered semiconductor laser respectively driven and provided with optical feedback restriction structures
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111803797A (en) * 2020-06-10 2020-10-23 殷硕仑 Short-wave infrared integrated medical light source and application
WO2022184108A1 (en) * 2021-03-04 2022-09-09 华为技术有限公司 Modulating amplifier, light-emitting apparatus, optical network unit, and optical line terminal

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