CN111370994B - Vertical cavity surface emitting semiconductor laser with upper electrode and middle electrode pair distributed in angle - Google Patents

Vertical cavity surface emitting semiconductor laser with upper electrode and middle electrode pair distributed in angle Download PDF

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CN111370994B
CN111370994B CN202010189149.4A CN202010189149A CN111370994B CN 111370994 B CN111370994 B CN 111370994B CN 202010189149 A CN202010189149 A CN 202010189149A CN 111370994 B CN111370994 B CN 111370994B
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electrode
upper electrode
cylinder
spiral line
axis
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CN111370994A (en
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晏长岭
逄超
杨静航
冯源
郝永芹
张剑家
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Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Abstract

An electrode pair angle distribution vertical cavity surface emitting semiconductor laser in the middle of an upper electrode belongs to the technical field of semiconductor lasers. The invention is characterized in that the hollow cylinder comprises two parts, one part is a circular cylinder body containing a flush high-resistance area, the axis of the circular cylinder body is superposed with the axis of the cylindrical flush high-resistance area, the other part is a spiral line cylinder body which is expanded from any position of the side surface of the circular cylinder body, and the polar coordinate equation of a spiral line of the spiral line cylinder body is that
Figure DDA0002415231210000011
Wherein the initial polar radius ρ0Determined in the range of 115-200 mu m, the deformation factor is determined in the range of 0.5-3.0, and the polar angle
Figure DDA0002415231210000012
In that
Figure DDA0002415231210000013
Determining within a range; the upper electrode is positioned on the upper surface of the spiral line cylinder; the middle electrode is positioned on the inner mirror surface of the lower distributed Bragg reflector and outside the hollow cylinder, and the shape of the middle electrode is the same as that of the upper electrode; the intersection point O' of the connecting line of the geometric centers of the upper electrode and the middle electrode and the geometric center of the middle electrode and the axis of the circular cylinder is a symmetric center and is distributed in point symmetry.

Description

Vertical cavity surface emitting semiconductor laser with upper electrode and middle electrode pair distributed in angle
Technical Field
The invention relates to a vertical cavity surface emitting semiconductor laser with an upper electrode middle electrode pair distributed in an angle, belonging to the technical field of semiconductor lasers.
Background
The vortex light is a light beam with a spiral phase wavefront and a phase singularity, and the wavefront can propagate around an axis in a spiral mode by taking a propagation direction as the axis in the propagation process to form a vortex light field. By utilizing the orbital angular momentum of the vortex light field and the dark hollow characteristic, the micro particles can be captured, controlled and rotated by vortex rotation in optical micro control, data can be stored by vortex light, information can be encoded, decoded, recorded and transmitted, and the micro deformation of an object can be measured. Compared with vortex light, the vortex hollow light has a larger area with zero central light intensity and stronger dark hollow characteristic. The vortex hollow light has applications not only in vortex rotation but also in the fields of material processing, super-resolution microscopy, quantum cryptography, quantum communication and the like.
In the prior art, a chinese patent with patent number zl201811252788.x discloses a scheme of a vertical cavity surface emitting semiconductor laser capable of emitting vortex hollow light, as shown in fig. 1, an upper electrode 1, an ohmic contact layer 2, an upper distributed bragg reflector 3, an oxide confinement layer 4, an active gain region 5, a lower distributed bragg reflector 6, a substrate 7, and a lower electrode 8 are sequentially arranged from top to bottom; the ohmic contact layer 2, the upper distributed Bragg reflector 3 and the active gain region 5 are laminated together to form a cylindrical region with a hollow part, and the inner diameter of the cylindrical region is 85-95 mu m, and the outer diameter of the cylindrical region is 115-125 mu m; the oxide limiting layer 4 is annular, the width of the annular is 3-5 μm, and the outer diameter of the annular is the same as that of the cylindrical region; a high-resistance region 9 is arranged below the hollow part of the cylindrical region, the bottom surface of the high-resistance region 9 is in contact with the lower distributed Bragg reflector 6, and the height of the top surface of the high-resistance region 9 is higher than the inner mirror surface of the upper distributed Bragg reflector 3 and lower than the outer mirror surface of the upper distributed Bragg reflector 3; the method is characterized in that the upper electrode 1 is positioned in a local area of the edge of the upper surface of the ohmic contact layer 2, the lower electrode 8 is positioned in a local area of the edge of the lower surface of the substrate 7, a connecting line of the geometric center of the upper electrode 1 and the geometric center of the lower electrode 8 is intersected with the axis of a laser, and the central angle theta 'of the upper electrode 1 and the central angle theta' of the lower electrode are both in the range of 30-90 degrees. The upper electrode 1 and the lower electrode 8 are arcuate or annular with a central angle in the range of 30 ° to 90 °, as shown in fig. 2 and 3, respectively. In the working process of the laser, current is injected from the upper electrode 1, the lower electrode 8 is located below the upper electrode 1, the current needs to flow along the diagonal line in the up-down direction, meanwhile, the high-resistance region 9 exists in the central region of the laser, so that the current is not injected in a uniform distribution mode, but injected in a vortex mode by bypassing the high-resistance region 9, and therefore the non-uniform rotation injection effect of the injected current is formed in the active gain region 5, the vortex gain mode effect is generated in the active gain region 5, and further vortex hollow light beam output is formed, as shown in fig. 4.
However, the prior art described above still has its drawbacks. In the vortex light of the mode, because the transverse distance between the upper electrode and the lower electrode is short, the orbital angular momentum is small, and the vortex effect is poor; the longitudinal distance between the upper electrode and the lower electrode is too far, so that the resistance is too large, and the device generates heat seriously. In addition, because the lower electrode is positioned on the lower surface of the substrate, the device needs to be turned over, extruded and the like in a series of subsequent processes, so that the device cannot be damaged; meanwhile, the prior art is difficult to accurately manufacture the electrode according to the electrode position determined by the technical scheme.
Disclosure of Invention
In order to further improve the vortex effect of vortex hollow light output by the conventional vertical cavity surface emitting semiconductor laser, reduce the heating condition of a device, reduce the process damage of the device and improve the manufacturing accuracy of the electrode position, the invention provides the vertical cavity surface emitting semiconductor laser with the electrode pair distributed at the middle of the upper electrode.
In the vertical cavity surface emitting semiconductor laser with the electrode pair distributed in the middle of the upper electrode, as shown in fig. 5 and 6, an upper electrode 1, an ohmic contact layer 2, an upper distributed bragg reflector 3, an oxide limiting layer 4, an active gain region 5, a lower distributed bragg reflector 6 and a substrate 7 are arranged from top to bottom in sequence; the ohmic contact layer 2, the upper distributed Bragg reflector 3 and the active gain region 5 are laminated together to form a hollow cylinder, the cylindrical homodyne high-resistance region 9 is positioned in the hollow part of the cylinder, and the shielding shaping layer 10 is positioned on the top surface of the homodyne high-resistance region 9; it is characterized in that the hollow column body comprises two parts, one part is a circular column body which is internally provided with a high resistance area 9 with even top, and the axis of the circular column bodyThe line is coincident with the axis of the cylindrical level-top high-resistance area 9, the other part is a spiral line cylinder which is extended from any position of the side surface of the circular cylinder, and the polar equation of the spiral line cylinder is
Figure BDA0002415231190000021
As shown in fig. 7, where the initial polar radius ρ0Determined in the range of 115-200 mu m, the deformation factor is determined in the range of 0.5-3.0, and the polar angle
Figure BDA0002415231190000022
In that
Figure BDA0002415231190000023
Determining within a range; the upper electrode 1 is positioned on the upper surface of the helical cylinder, as shown in fig. 5-7, and is composed of a helical line
Figure BDA0002415231190000024
A section of circular arc line and a section of straight line are enclosed, as shown in fig. 6 and 7; the middle electrode 8 is located on the inner mirror surface of the lower distributed bragg reflector 6 and outside the hollow cylinder, as shown in fig. 5 to 7, and the shape of the middle electrode 8 is the same as that of the upper electrode 1, as shown in fig. 7; the intersection point O' of the line connecting the geometric center of the upper electrode 1 and the geometric center of the middle electrode 8 with the axis of the circular cylinder, which is the symmetric center, of the upper electrode 1 and the middle electrode 8 is point-symmetrically distributed, as shown in fig. 6.
Based on the structural characteristics of the vertical cavity surface emitting semiconductor laser with the electrode pairs distributed at the angle in the upper electrode, the vortex hollow light can be generated according to the same principle as the existing vertical cavity surface emitting semiconductor laser capable of emitting the vortex hollow light, and because the outer edges of the two electrodes are both in a spiral shape, the shape applies an initial limit to the current so as to induce and restrict the current to flow in the circular cylinder along a spiral track, and meanwhile, because the upper electrode 1 is positioned on the upper surface of the spiral cylinder which is expanded from any position of the side surface of the circular cylinder, the transverse distance between the two electrodes is increased, as shown in figure 2 or figures 3 and 7, the electronic track angular momentum between the two electrodes is increased, and the common effect is that the current is better rotated, therefore, compared with the existing vertical cavity surface emitting semiconductor laser capable of emitting the vortex hollow light, the swirling effect is stronger. In the invention, the existing lower electrode is actually moved from the lower surface of the substrate 7 to the inner mirror surface of the lower distributed bragg reflector 6 to be used as the middle electrode 8, so that the longitudinal distance between the two electrodes is greatly shortened, as shown in fig. 1 and 5 or fig. 4 and 6, current flows from the upper electrode 1 to the middle electrode 8 and does not flow through the lower distributed bragg reflector 6 and the substrate 7, the loop resistance is effectively reduced, the heat generation is obviously reduced, and the luminous efficiency of the device is greatly improved. Because the lower electrode of the existing device on the lower surface of the substrate is eliminated, the operations of turning, extruding and the like on the device are not needed in the manufacturing of the middle electrode 8 and the subsequent series of process processes, such as the packaging of the device, and the damage to the device is avoided. According to the structural characteristics of the invention, the upper electrode 1, the middle electrode 8 and the shielding shaping layer 10 can be manufactured in one process step, the adopted processes such as magnetron sputtering, photoetching and corrosion have strong controllability, and the electrodes can be accurately manufactured at the designed electrode positions completely to obtain the expected invention effect.
In addition, although the hollow cylinder is composed of the original circular cylinder and the expanded spiral cylinder, in the actual device process, the circular cylinder and the spiral cylinder are also formed by etching the cubic semi-finished product at one time, and the process difficulty is not increased.
Drawings
FIG. 1 is a schematic front cross-sectional view of a conventional VCSEL structure capable of emitting vortex core light. Fig. 2 and 3 are schematic top views of conventional vcsel structures capable of emitting vortex hollow light, which further illustrate the positions, shapes and dimensions of the upper and lower electrodes. Fig. 4 is a schematic perspective view of a conventional vertical cavity surface emitting semiconductor laser structure capable of emitting vortex hollow light and a light emitting form. FIG. 5 is a schematic cross-sectional front view of a VCSEL structure with an upper electrode and a middle electrode disposed diagonally distributed. Fig. 6 is a schematic perspective view of the structure and light-emitting form of the vcsel with the central electrode in the upper electrode and the angularly distributed middle electrode, which is taken as an abstract drawing. Fig. 7 is a schematic top view of an upper electrode-center-positioned angularly distributed vcsel laser structure of the present invention, further illustrating the symmetry, shape and dimensions of the upper and center electrodes. Fig. 8 is a schematic top view showing the structural relationship between a circular pillar and a spiral pillar in an upper electrode-centered electrode vs. FIG. 9 is a schematic top cross sectional view of the shape of an oxide confinement layer in an upper electrode-in-electrode-to-corner distributed VCSEL laser of the present invention.
Detailed Description
The invention discloses unnecessary technical characteristics of an electrode pair angle distribution vertical cavity surface emitting semiconductor laser in an upper electrode, which comprise the following items:
the upper electrode 1, the middle electrode 8 and the shielding shaping layer 10 are made of the same material and are all Ti/Pt/Au or Ni/Ge/Au.
The oxide confinement layer 4 is composed of an annular layer and a spiral layer extending from the side of the annular layer into the spiral column. The spiral line layer can prevent a small amount of current from flowing directly from the upper electrode 1 to the active gain region 5 directly below.

Claims (2)

1. An upper electrode middle electrode pair angle distribution vertical cavity surface emitting semiconductor laser comprises an upper electrode (1), an ohmic contact layer (2), an upper distribution Bragg reflector (3), an oxide limiting layer (4), an active gain region (5), a lower distribution Bragg reflector (6) and a substrate (7) from top to bottom in sequence; the ohmic contact layer (2), the upper distributed Bragg reflector (3) and the active gain region (5) are laminated together to form a hollow cylinder, the cylindrical top-flush high-resistance region (9) is positioned in the hollow part of the cylinder, and the shielding forming layer (10) is positioned on the top surface of the top-flush high-resistance region (9); it is characterized in that the hollow cylinder comprises two parts, one part is a circular cylinder containing a high resistance region (9) with even top, the axis of the circular cylinder is superposed with the axis of the cylindrical high resistance region (9) with even top, and the other part is a cylinder with even topThe spiral line cylinder body which is expanded from any position of the side surface of the circular cylinder body has a spiral line polar coordinate equation of
Figure FDA0002769426080000011
Wherein the initial polar radius ρ0Determined in the range of 115-200 mu m, the deformation factor is determined in the range of 0.5-3.0, and the polar angle
Figure FDA0002769426080000012
In that
Figure FDA0002769426080000013
Determining within a range; the upper electrode (1) is positioned on the upper surface of the spiral line cylinder and consists of a spiral line
Figure FDA0002769426080000014
A section of circular arc line and a section of straight line are enclosed; the middle electrode (8) is positioned on the inner mirror surface of the lower distributed Bragg reflector (6) and outside the hollow cylinder, and the shape of the middle electrode (8) is the same as that of the upper electrode (1); the intersection point O' of the connecting line of the geometric center of the upper electrode (1) and the geometric center of the middle electrode (8) above the upper electrode (1) and the middle electrode (8) and the axis of the circular cylinder is a symmetric center and is distributed in point symmetry.
2. The VCSEL of claim 1, wherein the upper electrode center-mounted electrode is formed of the same material as the center-mounted electrode (1), the center-mounted electrode (8) and the shielding shaping layer (10), and each is Ti/Pt/Au or Ni/Ge/Au.
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