CN110336179B - Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device - Google Patents
Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device Download PDFInfo
- Publication number
- CN110336179B CN110336179B CN201910625130.7A CN201910625130A CN110336179B CN 110336179 B CN110336179 B CN 110336179B CN 201910625130 A CN201910625130 A CN 201910625130A CN 110336179 B CN110336179 B CN 110336179B
- Authority
- CN
- China
- Prior art keywords
- active
- waveguide
- semiconductor
- layer
- functional partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor epitaxial structure, a preparation method thereof and a semiconductor active photoelectric device, which comprise a substrate, a buffer layer, a lower cladding, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding, a cover layer and a contact layer which are sequentially distributed from bottom to top, wherein the upper surface of the lower cladding is of an upper boss structure, the lower surface of the lower waveguide layer is of a lower boss structure, and the upper boss structure and the lower boss structure are complementary to each other so that the outlines of the upper boss structure and the lower boss structure are overlapped; the upper surface of the upper boss structure and the upper surface of the upper waveguide layer form a first active waveguide structure, the lower surface of the lower boss structure and the upper surface of the upper waveguide layer form a second active waveguide structure, the optical limiting factor of the first active waveguide structure is larger than that of the second active waveguide structure, the optical mode volume of the first active waveguide structure is smaller than that of the second active waveguide structure, a functional region with high gain level and high saturation output power level can be provided at the same time, and the slow axis light beam quality is ensured.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a semiconductor epitaxial structure, a preparation method thereof and a semiconductor active photoelectric device.
Background
The semiconductor active photoelectric device has the advantages of small volume, light weight, direct light emission of the electric pump and the like, and has wide application field. However, due to the limiting factors such as heat accumulation and damage threshold, the saturation output power of the conventional narrow-strip waveguide structure edge-emitting device with the fundamental transverse mode output characteristic meets the bottleneck.
At present, in the prior art, a lower waveguide layer in a semiconductor epitaxial structure is a planar structure, and an optical mode has a small volume and has the characteristics of higher optical gain and low saturated output optical power, in order to improve the saturated output optical power of a semiconductor active photoelectric device, a tapered waveguide structure is usually adopted when the semiconductor active photoelectric device is manufactured, so that the saturated output optical power is further improved by increasing the gain area of a semiconductor material, and the biggest defect of the method is that the quality of a slow-axis light beam is obviously reduced, and the performance of the semiconductor active photoelectric device is influenced; the other solution is to increase the waveguide thickness in the semiconductor epitaxial structure, thereby increasing the optical mode volume, reducing the optical confinement factor, and greatly increasing the saturation output power level, and the semiconductor epitaxial structure can adopt the conventional narrow-strip waveguide structure to prepare the active photoelectric device, thereby ensuring the slow axis beam quality close to the diffraction limit, but the greatest disadvantage of this method is that the optical gain level will be greatly reduced, which affects the performance of the semiconductor active photoelectric device.
In view of this, how to provide a semiconductor epitaxial structure with a high gain level and a high saturation output power level, a method for manufacturing the same, and a semiconductor active photoelectric device, and further, how to ensure the quality of a slow-axis beam close to the diffraction limit of the semiconductor active photoelectric device becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The embodiment of the invention aims to provide a semiconductor epitaxial structure, a preparation method thereof and a semiconductor active photoelectric device, which can simultaneously provide a functional area with high gain level and high saturation output power level for the semiconductor active photoelectric device in the using process and can also ensure the near diffraction limit slow axis light beam quality of the semiconductor active photoelectric device.
In order to solve the above technical problem, an embodiment of the present invention provides a semiconductor epitaxial structure, which is applied to a semiconductor active optoelectronic device, and includes a substrate, a buffer layer, a lower cladding layer, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding layer, a cap layer, and a contact layer, which are sequentially distributed from bottom to top, where:
the upper surface of the lower cladding layer is provided with an upper boss structure, the lower surface of the lower waveguide layer is provided with a lower boss structure, and the upper boss structure and the lower boss structure are complementary to each other, so that the outlines of the upper boss structure and the lower boss structure are overlapped; the upper surface of the upper boss structure to the upper surface of the upper waveguide layer form a first active waveguide structure, the lower surface of the lower boss structure to the upper surface of the upper waveguide layer form a second active waveguide structure, the optical confinement factor of the first active waveguide structure is greater than that of the second active waveguide structure, and the optical mode volume of the first active waveguide structure is smaller than that of the second active waveguide structure.
Optionally, the upper boss structure and the lower boss structure are both rectangular structures.
Optionally, the upper boss structure is a trapezoid structure, and the lower boss structure is an inverted trapezoid structure.
The embodiment of the invention correspondingly provides a preparation method of a semiconductor epitaxial structure, which comprises the following steps:
growing an epitaxial structure on a substrate to form a buffer layer; performing epitaxial growth on the buffer layer to obtain an initial lower cladding layer with a planar structure;
etching the initial lower cladding by adopting an etching method to obtain grooves and upper boss structures which are distributed at intervals so as to obtain a lower cladding;
preparing a mask on the upper surface of the upper convex platform structure, carrying out epitaxial growth in the groove to enable the growth thickness to reach the height of the upper convex platform structure so as to form a lower convex platform structure, and removing the mask to continue epitaxial growth so as to obtain a lower waveguide layer;
and continuing epitaxial growth on the lower waveguide layer, and sequentially obtaining an active region, an upper waveguide layer, an upper cladding layer, a cover layer and a contact layer.
The embodiment of the invention also provides a semiconductor active photoelectric device which comprises a narrow-strip structure chip manufactured on the basis of the semiconductor epitaxial structure.
Optionally, the narrow-strip-structured chip is prepared by a double-channel planar waveguide process, the narrow-strip-structured chip includes a first functional partition and a second functional partition, an isolation electrode is disposed between the first functional partition and the second functional partition, and double channels are disposed on two sides of the first functional partition and two sides of the second functional partition;
the first functional partition is formed by a first active waveguide structure in the semiconductor epitaxial structure, and the second functional partition is formed by a second active waveguide structure in the semiconductor epitaxial structure.
Optionally, the semiconductor active photoelectric device is a semiconductor optical amplifier, the first functional partition is used as a front-stage power amplifier of the semiconductor optical amplifier, and the second functional partition is used as a rear-stage power amplifier of the semiconductor optical amplifier.
Optionally, the semiconductor active optoelectronic device is a master oscillation power amplifier, the first functional partition is used as a master oscillator of the master oscillation power amplifier, and the second functional partition is used as a power amplifier of the master oscillation power amplifier.
Optionally, the master oscillation power amplifier is a master oscillation power amplifier with a non-grating structure, a master oscillation power amplifier with a distributed bragg reflector structure, or a master oscillation power amplifier with a distributed feedback structure.
The embodiment of the invention provides a semiconductor epitaxial structure, a preparation method thereof and a semiconductor active photoelectric device, which are applied to the semiconductor active photoelectric device, wherein the semiconductor epitaxial structure comprises a substrate, a buffer layer, a lower cladding, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding, a cover layer and a contact layer which are sequentially distributed from bottom to top, wherein the upper surface of the lower cladding is of an upper boss structure, the lower surface of the lower waveguide layer is of a lower boss structure, and the upper boss structure is matched with the lower boss structure so that the outlines of the upper boss structure and the lower boss structure are overlapped; the upper surface of the upper boss structure and the upper waveguide layer form a first active waveguide structure, the lower surface of the lower boss structure and the upper waveguide layer form a second active waveguide structure, the optical confinement factor of the first active waveguide structure is larger than that of the second active waveguide structure, and the optical mode volume of the first active waveguide structure is smaller than that of the second active waveguide structure.
It can be seen that the semiconductor epitaxial structure in the present invention includes a first active waveguide structure and a second active waveguide structure, and the optical confinement factor of the first active waveguide structure is greater than the optical confinement factor of the second active waveguide structure, the optical mode volume of the first active waveguide structure is less than the optical mode volume of the second active waveguide structure, so that a first active waveguide structure capable of realizing a functional region providing a high gain level, a second active waveguide structure capable of realizing a functional region providing a high saturation output power level, the two active waveguide structures being integrated in the same epitaxial wafer, a variety of semiconductor active optoelectronic devices having an on-chip cascade structure can be simultaneously provided with functional regions having high gain levels and high saturation output power levels, and the semiconductor epitaxial structure in the application can be used for preparing a narrow chip structure, so that the quality of the slow axis beam close to the diffraction limit of the semiconductor active photoelectric device is ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed in the prior art and the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor epitaxial structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another semiconductor epitaxial structure according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a method for fabricating a semiconductor epitaxial structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor active optoelectronic device according to an embodiment of the present invention;
FIG. 5 is a diagram of a light pattern corresponding to the first functional partition of FIG. 4;
fig. 6 is a light pattern distribution diagram corresponding to the second functional partition in fig. 4.
Detailed Description
The embodiment of the invention provides a semiconductor epitaxial structure, a preparation method thereof and a semiconductor active photoelectric device, which can simultaneously provide a functional area with high gain level and high saturation output power level for the semiconductor active photoelectric device in the using process and can also ensure the near diffraction limit slow axis light beam quality of the semiconductor active photoelectric device.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor epitaxial structure according to an embodiment of the present invention.
The semiconductor epitaxial structure is applied to a semiconductor active photoelectric device and comprises a substrate 11, a buffer layer 12, a lower cladding layer 13, a lower waveguide layer 14, an active region 15, an upper waveguide layer 16, an upper cladding layer 17, a cover layer 18 and a contact layer 19 which are sequentially distributed from bottom to top, wherein:
the upper surface of the lower cladding layer 13 is of an upper boss structure, the lower surface of the lower waveguide layer 14 is of a lower boss structure, and the upper boss structure and the lower boss structure are complementary to each other, so that the outlines of the upper boss structure and the lower boss structure are overlapped; the upper surface of the upper boss structure forms a first active waveguide structure to the upper surface of the upper waveguide layer 16, the lower surface of the lower boss structure forms a second active waveguide structure to the upper surface of the upper waveguide layer 16, the optical confinement factor of the first active waveguide structure is greater than that of the second active waveguide structure, and the optical mode volume of the first active waveguide structure is smaller than that of the second active waveguide structure.
It should be noted that, in the present embodiment, the substrate 11 is used to provide an epitaxial growth substrate, the buffer layer 12 is used to provide an epitaxial growth plane with a smaller number of defects than the surface of the substrate 11, the lower cladding layer 13 is shown in fig. 1, the lower surface of the lower cladding layer 13, that is, the upper surface of the buffer layer 12, is a plane, the upper surface of the lower cladding layer has an upper convex structure, the lower surface of the lower waveguide layer 14 located above the lower cladding layer 13 coincides with the upper surface of the lower cladding layer 13, and the lower surface of the lower waveguide layer 14 has a lower convex structure, the upper surface of the lower waveguide layer 14 is a plane structure, that is, the lower convex structure of the lower surface of the lower. Specifically, in this embodiment, a high step region 14-1 is formed between the upper surface of the upper mesa structure of the lower cladding layer 13 and the upper surface of the lower waveguide layer 14, the distance between the upper surface of the upper mesa structure and the upper surface of the lower waveguide layer 14 is short, a low step region 14-2 is formed between the lower surface of the lower mesa structure of the lower waveguide layer 14 and the upper surface of the lower waveguide layer 14, and the distance between the lower surface of the lower mesa structure and the upper surface of the lower waveguide layer 14 is large. That is, the lower waveguide layer 14 has two different functional regions, and a first active waveguide structure can be formed between the high step region 14-1 and the upper waveguide layer 16, and has a higher optical confinement factor and a smaller optical mode volume, and thus has a higher gain level, and can provide a functional region with a high gain level; a second active waveguide structure can be formed between the low step region 14-2 and the upper waveguide layer 16, the second active waveguide structure has a lower optical confinement factor and a larger optical mode volume, so that the saturation output power level is higher, a functional region with a high saturation output power level can be provided, and the semiconductor epitaxial structures with two functions are closely connected in the same epitaxial wafer, so that functional regions with high gain levels and high saturation output power levels can be simultaneously provided for a plurality of active optoelectronic devices with on-chip cascade structures. The heights of the upper convex structure and the lower convex structure can be determined according to the actually required gain level and saturation power output level, and the application is not particularly limited.
In addition, in the present application, the active region 15, the upper waveguide layer 16, the upper cladding layer 17, the cap layer 18, and the contact layer 19 are sequentially disposed above the lower waveguide layer 14, the active region 15 is used for providing optical mode gain, the upper waveguide layer 16 and the lower waveguide layer 14 together form an active waveguide structure, the upper cladding layer 17 is used for providing upper optical field confinement of an optical mode, the cap layer 18 is used for protecting an epitaxial structure located below the cap layer, and the contact layer 19 is used for preparing ohmic contact, and the active region 15 in this embodiment may adopt, but is not limited to, a quantum well structure. The substrate 11, the buffer layer 12, the active region 15, the upper waveguide layer 16, the upper cladding layer 17, the cap layer 18 and the contact layer 19 in this embodiment may be made of any structure, material and manufacturing method in the prior art, which is not described in detail herein.
As shown in fig. 1, the upper and lower boss structures in this embodiment may be both rectangular structures, so as to reduce the difficulty in manufacturing.
The width of the upper convex structure and the width of the lower convex structure respectively determine the length of the optical field transmitted in the first active waveguide and the second active waveguide, and can be specifically determined according to the type of the actually prepared device and the required gain level and saturation output power level.
Of course, in order to make the optical field spread more smoothly when the transmission light transits from the first active waveguide structure to the second active waveguide structure, the upper convex structure in the embodiment may be set to be a trapezoid structure, and the lower convex structure may be set to be an inverted trapezoid structure, as shown in fig. 2 in particular.
It can be seen that the semiconductor epitaxial structure in the present invention includes a first active waveguide structure and a second active waveguide structure, and the optical confinement factor of the first active waveguide structure is greater than the optical confinement factor of the second active waveguide structure, the optical mode volume of the first active waveguide structure is less than the optical mode volume of the second active waveguide structure, so that a first active waveguide structure capable of realizing a functional region providing a high gain level, a second active waveguide structure capable of realizing a functional region providing a high saturation output power level, the two active waveguide structures being integrated in the same epitaxial wafer, a variety of semiconductor active optoelectronic devices having an on-chip cascade structure can be simultaneously provided with functional regions having high gain levels and high saturation output power levels, and the semiconductor epitaxial structure in the application can be used for preparing a narrow chip structure, so that the quality of the slow axis beam close to the diffraction limit of the semiconductor active photoelectric device is ensured.
On the basis of the foregoing embodiments, embodiments of the present invention correspondingly provide a method for fabricating a semiconductor epitaxial structure, and specifically refer to fig. 3. The method comprises the following steps:
s110: growing an epitaxial structure on a substrate to form a buffer layer;
s120: performing epitaxial growth on the buffer layer to obtain an initial lower cladding layer with a planar structure;
specifically, in the present application, when the semiconductor epitaxial structure provided in the above embodiment is prepared, the substrate and the buffer layer may be grown layer by layer in the first epitaxial growth, and the epitaxial growth may be continued on the buffer layer until the position of the mesa structure on the upper surface of the lower cladding layer is reached, so as to obtain the initial lower cladding layer with a planar structure.
S130: etching the initial lower cladding by adopting an etching method to obtain grooves and upper boss structures which are distributed at intervals so as to obtain a lower cladding;
specifically, a groove is prepared on the surface of the initial lower cladding layer through an etching process, the depth of the groove is equal to the height of the upper convex structure, so that the upper convex structure, namely the lower cladding layer, can be obtained, and the prepared groove can be used for growing the lower convex structure of the lower waveguide layer.
S140: preparing a mask on the upper surface of the upper boss structure, carrying out epitaxial growth in the groove to enable the growth thickness to reach the height of the upper boss structure, and continuing epitaxial growth after removing the mask so as to obtain a lower waveguide layer;
specifically, when the lower waveguide layer is prepared, after a mask is prepared on the upper surface of the upper boss structure of the lower cladding layer, the lower waveguide layer is subjected to secondary region selective growth, when the growth thickness reaches the height of the upper boss structure, the growth can be stopped when the groove is filled and leveled, then the mask and redundant materials on the mask are removed, at the moment, the epitaxial wafer has a smooth and flat upper surface, and finally the remaining structure layer is grown for the third time.
S150: and continuing epitaxial growth on the lower waveguide layer, and sequentially obtaining an active region, an upper waveguide layer, an upper cladding layer, a cover layer and a contact layer.
That is, after the lower waveguide layer is obtained, the third epitaxial structure is grown on the lower waveguide layer to obtain the active region, the upper waveguide layer, the upper cladding layer, the cap layer, and the contact layer in this order, thereby obtaining the semiconductor epitaxial structure in the present embodiment.
It should be noted that the method for manufacturing the semiconductor epitaxial structure provided in the present embodiment has the same beneficial effects as the semiconductor epitaxial structure provided in the foregoing embodiment, and for specific descriptions of the semiconductor epitaxial structure related in the present embodiment, please refer to the foregoing embodiment, which is not described herein again.
On the basis of the above embodiments, the embodiments of the present invention further provide a semiconductor active optoelectronic device, which includes a narrow-strip-structured chip fabricated based on the semiconductor epitaxial structure as described above. Specifically, referring to fig. 4, the narrow-strip-structured chip in this embodiment may be obtained by using a double-channel planar waveguide process to prepare the semiconductor epitaxial structure, where the narrow-strip-structured chip includes a first functional partition 21 and a second functional partition 22, an isolation electrode 23 is disposed between the first functional partition 21 and the second functional partition 22, and double channels 24 are disposed on two sides of the first functional partition 21 and two sides of the second functional partition 22;
the first functional partition 21 is formed by a first active waveguide structure in the semiconductor epitaxial structure and the second functional partition 22 is formed by a second active waveguide structure in the semiconductor epitaxial structure.
It should be noted that, the structure 25 in fig. 4 is the high step region 14-1 of the semiconductor epitaxial structure, and the structure 26 is the low step region 14-2 of the semiconductor epitaxial structure, the first functional partition 21 in this embodiment specifically includes a first active waveguide structure in the semiconductor epitaxial structure, and the second functional partition 22 specifically includes a second active waveguide structure in the semiconductor epitaxial structure.
It should also be noted that the optical mode profile in the first functional partition 21 is the optical mode profile 31 shown in fig. 5, which has a high optical confinement factor and a small optical mode volume; the light mode profile in the second functional partition 22 is shown in fig. 6 as light mode profile 32, with a low optical confinement factor and a large light mode volume. In addition, the light modes in the first functional partition 21 and the second functional partition 22 are both a fundamental mode or a single transverse mode.
Further, the semiconductor active photoelectric device in this embodiment may be a semiconductor optical amplifier, the first functional partition 21 serves as a front-stage power amplifier of the semiconductor optical amplifier, and the second functional partition 22 serves as a rear-stage power amplifier of the semiconductor optical amplifier.
Specifically, the semiconductor optical amplifier in this embodiment may use the first functional partition 21 as a preceding stage power amplifier, and has a function of amplifying externally input weak signal light to a medium power level by using the high gain characteristic of the first functional partition 21; the second functional partition 22 may be used as a subsequent power amplifier, and functions to further amplify the medium-power signal light output by the first functional partition 21 to a high power level by using the high saturation output power characteristic of the second functional partition 22. In the semiconductor optical amplifier, the input cavity surface of the first functional partition 21 and the output cavity surface of the second functional partition 22 are usually prepared with anti-reflection films with ultralow reflectivity, so that optical mode oscillation inside a chip is eliminated as much as possible, and the optical gain level and the saturation output power level are improved. In addition, the semiconductor optical amplifier in this embodiment can also be fabricated with an inclined waveguide chip structure to further reduce the reflectivity level of the input and output cavity surfaces.
Further, the semiconductor active optoelectronic device in this embodiment is a master oscillator power amplifier, the first functional partition 21 is used as a master oscillator of the master oscillator power amplifier, and the second functional partition 22 is used as a power amplifier of the master oscillator power amplifier.
Specifically, the master oscillator power amplifier may be a master oscillator power amplifier having a non-grating structure, a master oscillator power amplifier having a distributed bragg mirror structure, or a master oscillator power amplifier having a distributed feedback structure.
In the case where the master oscillator power amplifier has a non-grating structure, the first functional partition 21 may be used as a master oscillator for generating the seed light having the multi-longitudinal mode characteristic, and the second functional partition 22 may be used as a power amplifier for amplifying the optical power of the seed light output from the first functional partition 21. The rear cavity surface of the first functional subarea 21 of the master oscillator power amplifier with the no-grating structure is generally prepared with a high-reflection film to reduce mirror surface loss, and the front cavity surface of the second functional subarea 22 is generally prepared with a lower-reflectivity anti-reflection film to increase the output power level, and on the other hand, a small amount of feedback light is provided to the master oscillator to form a resonant cavity.
When the master oscillation power amplifier is a master oscillation power amplifier with a distributed bragg reflector structure, the first functional partition 21 can be used as a master oscillator, the function of the master oscillator is to generate seed light with single longitudinal mode characteristics, and a passive distributed bragg reflector structure can be prepared at the position of a rear cavity surface of the first functional partition 21; the second functional partition 22 may be employed as a power amplifier, and functions to amplify the optical power of the seed light output from the first functional partition 21. In the main oscillation power amplifier with the distributed Bragg reflector structure, antireflection films are usually prepared on the rear cavity surface of the first functional partition 21 and the front cavity surface of the second functional partition 22 so as to eliminate useless optical feedback of the positions of the front cavity surface and the rear cavity surface as much as possible and improve the stability of a single longitudinal mode and the level of saturated output power.
When the main oscillation power amplifier is a main oscillation power amplifier with a distributed feedback structure, the first functional partition 21 can be used as a main oscillator, the function is to generate seed light with single longitudinal mode characteristics, and a surface grating or buried grating structure can be prepared in the area of the first functional partition 21; the second functional partition 22 may be employed as a power amplifier, and functions to amplify the optical power of the seed light output from the first functional partition 21. In the main oscillation power amplifier with the distributed feedback structure in this embodiment, the back cavity surface of the first functional partition 21 and the front cavity surface of the second functional partition 22 are usually provided with antireflection films, so as to eliminate the useless optical feedback at the positions of the front and back cavity surfaces as much as possible, and improve the stability of a single longitudinal mode and the saturation output power level.
The application provides a plurality of active photoelectric devices which have high power output characteristics and simultaneously have the advantages of the following aspects:
firstly, the active photoelectric device in the application completes the optical coupling of the front stage and the rear stage on the chip, thereby avoiding the optical loss caused by external optical coupling and improving the stability and reliability of the device; secondly, compared with a common conical structure, the active photoelectric device provided by the application can realize high saturation output power under the condition of preparing a narrow chip structure, and the quality of a slow axis light beam of output light is higher than that of the conical structure, so that the active photoelectric device is more favorable for long-distance application; and thirdly, the sizes of the fast axis and the slow axis waveguides of the output cavity surface of the active photoelectric device are close to each other, the output light beams are close to circular symmetry, and the single-mode fiber coupling efficiency is greatly improved. Therefore, the method has important significance for promoting the application of the semiconductor active photoelectric device in a specific scene requiring high power output and near diffraction limit light beam quality at the same time.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A semiconductor epitaxial structure is applied to a semiconductor active photoelectric device and comprises a substrate, a buffer layer, a lower cladding, a lower waveguide layer, an active region, an upper waveguide layer, an upper cladding, a cover layer and a contact layer which are sequentially distributed from bottom to top, and is characterized in that the upper surface of the lower cladding is of an upper boss structure, the lower surface of the lower waveguide layer is of a lower boss structure, and the upper boss structure and the lower boss structure are complementary to each other, so that the outlines of the upper boss structure and the lower boss structure are overlapped; a first active waveguide structure is formed from the upper surface of the upper boss structure to the upper surface of the upper waveguide layer, a second active waveguide structure is formed from the lower surface of the lower boss structure to the upper surface of the upper waveguide layer, the optical confinement factor of the first active waveguide structure is greater than that of the second active waveguide structure, and the optical mode volume of the first active waveguide structure is smaller than that of the second active waveguide structure;
the semiconductor epitaxial structure is used for transmitting light waves, the light wave transmission direction is the direction from the first active waveguide structure to the second active waveguide structure, and double channels parallel to the light wave transmission direction are arranged on two sides of the first active waveguide structure and the second active waveguide structure.
2. The semiconductor epitaxial structure of claim 1, wherein the upper mesa structure and the lower mesa structure are both rectangular structures.
3. The semiconductor epitaxial structure of claim 1, wherein the upper mesa structure is a trapezoidal structure and the lower mesa structure is an inverted trapezoidal structure.
4. A method for preparing a semiconductor epitaxial structure is characterized by comprising the following steps:
growing an epitaxial structure on a substrate to form a buffer layer;
performing epitaxial growth on the buffer layer to obtain an initial lower cladding layer with a planar structure;
etching the initial lower cladding by adopting an etching method to obtain grooves and upper boss structures which are distributed at intervals so as to obtain a lower cladding;
preparing a mask on the upper surface of the upper convex platform structure, carrying out epitaxial growth in the groove to enable the growth thickness to reach the height of the upper convex platform structure so as to form a lower convex platform structure, and removing the mask to continue epitaxial growth so as to obtain a lower waveguide layer;
continuing epitaxial growth on the lower waveguide layer, and sequentially obtaining an active region, an upper waveguide layer, an upper cladding layer, a cover layer and a contact layer;
the upper surface of the upper boss structure and the upper surface of the upper waveguide layer form a first active waveguide structure, and the lower surface of the lower boss structure and the upper surface of the upper waveguide layer form a second active waveguide structure; the semiconductor epitaxial structure is used for transmitting light waves, and the light wave transmission direction is a direction from the first active waveguide structure to the second active waveguide structure;
and forming double channels parallel to the propagation direction of the optical wave on two sides of the first active waveguide structure and the second active waveguide structure.
5. A semiconductor active optoelectronic device, comprising a chip with a narrow strip structure fabricated on the basis of the semiconductor epitaxial structure according to any one of claims 1 to 3.
6. The semiconductor active optoelectronic device according to claim 5, wherein the chip with narrow strip structure is prepared by a dual-channel planar waveguide process, the chip with narrow strip structure comprises a first functional partition and a second functional partition, an isolation electrode is arranged between the first functional partition and the second functional partition, and dual channels are arranged on two sides of the first functional partition and two sides of the second functional partition;
the first functional partition is formed by a first active waveguide structure in the semiconductor epitaxial structure, and the second functional partition is formed by a second active waveguide structure in the semiconductor epitaxial structure.
7. The semiconductor active optoelectronic device of claim 6, wherein the semiconductor active optoelectronic device is a semiconductor optical amplifier, the first functional partition is used as a front stage power amplifier of the semiconductor optical amplifier, and the second functional partition is used as a rear stage power amplifier of the semiconductor optical amplifier.
8. The semiconductor active optoelectronic device of claim 6, wherein the semiconductor active optoelectronic device is a master oscillator power amplifier, the first functional partition serves as a master oscillator of the master oscillator power amplifier, and the second functional partition serves as a power amplifier of the master oscillator power amplifier.
9. The semiconductor active optoelectronic device according to claim 8, wherein the master oscillator power amplifier is a master oscillator power amplifier having a no grating structure, a master oscillator power amplifier having a distributed bragg mirror structure, or a master oscillator power amplifier having a distributed feedback structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910625130.7A CN110336179B (en) | 2019-07-11 | 2019-07-11 | Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910625130.7A CN110336179B (en) | 2019-07-11 | 2019-07-11 | Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110336179A CN110336179A (en) | 2019-10-15 |
| CN110336179B true CN110336179B (en) | 2021-05-04 |
Family
ID=68146411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910625130.7A Active CN110336179B (en) | 2019-07-11 | 2019-07-11 | Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110336179B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022174927A1 (en) * | 2021-02-22 | 2022-08-25 | Huawei Technologies Co., Ltd. | Optimized semiconductor optical amplifier |
| CN115021823B (en) * | 2021-03-04 | 2024-05-03 | 华为技术有限公司 | Modulation amplifier, optical transmitter, optical network unit, and optical line terminal |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152182A (en) * | 1981-03-16 | 1982-09-20 | Nec Corp | Manufacture of semiconductor laser device |
| JPS57160187A (en) * | 1981-03-27 | 1982-10-02 | Nec Corp | Manufacture of semiconductor laser |
| JPS5990982A (en) * | 1982-11-17 | 1984-05-25 | Sharp Corp | Semiconductor laser element |
| CN101471534B (en) * | 2007-12-28 | 2010-06-23 | 中国科学院半导体研究所 | Method for making high brightness semiconductor conical laser/amplifier |
| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
| CN104466678A (en) * | 2014-12-11 | 2015-03-25 | 中国科学院半导体研究所 | Tube core of high-power low-threshold fundamental-transverse-mode 975-nm semiconductor laser unit |
| CN107851952B (en) * | 2015-06-05 | 2020-09-11 | I·B·彼得雷斯库-普拉霍瓦 | Emitting semiconductor laser type device |
| CN105514801A (en) * | 2016-01-20 | 2016-04-20 | 中国科学院半导体研究所 | Two-groove wide-ridge type semiconductor light amplifier and preparation method thereof |
| CN106785915B (en) * | 2016-12-05 | 2019-12-10 | 长春理工大学 | Semiconductor optical amplifier |
| CN109560465A (en) * | 2017-09-26 | 2019-04-02 | 北京万集科技股份有限公司 | A kind of 1x1 type single-chip integration formula semiconductor main oscillations amplifier |
| EP3648269B1 (en) * | 2018-11-02 | 2023-04-26 | Huawei Technologies Co., Ltd. | Optical amplifier |
| CN109873295B (en) * | 2019-04-17 | 2020-07-31 | 中国工程物理研究院应用电子学研究所 | On-chip integrated cascade amplification semiconductor laser |
-
2019
- 2019-07-11 CN CN201910625130.7A patent/CN110336179B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| ９８０ｎｍ半导体激光器ｎ型波导结构优化;安宁等;《强激光与粒子束》;20141031;第26卷(第10期);第101015-1页第5-6段，图1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110336179A (en) | 2019-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112290382B (en) | Semiconductor laser and manufacturing method thereof | |
| US6411764B1 (en) | Double core spot size converter using selective area growth and fabricating method thereof | |
| JP2959902B2 (en) | Semiconductor laser, device having the same, and method of manufacturing the same | |
| US20020051615A1 (en) | Slab-coupled optical waveguide laser and amplifier | |
| JP6487195B2 (en) | Semiconductor optical integrated device, semiconductor optical integrated device manufacturing method, and optical module | |
| CN105720479B (en) | A kind of high speed semiconductor laser with beam-spreading structure | |
| JPH04243216A (en) | Production of optical waveguide and optical integrated element and production thereof | |
| CN109412020A (en) | One kind is fallen from power type high speed semiconductor laser chip and preparation method thereof | |
| JPS59988A (en) | Hetero junction injection type laser | |
| CN101316027A (en) | Production method of quantum well edge-emission semiconductor laser | |
| CN110336179B (en) | Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device | |
| CN112868149A (en) | Optical amplifier | |
| CN111541149B (en) | 10G anti-reflection laser and preparation process thereof | |
| US10992107B2 (en) | Narrow-linewidth laser | |
| WO2024165037A1 (en) | Electric-injection mixing-cavity dfb laser and manufacturing method therefor | |
| JP3745985B2 (en) | Complex coupled type distributed feedback semiconductor laser device | |
| CN108400523B (en) | High-speed integrated DFB semiconductor laser chip and preparation method thereof | |
| JPS5940592A (en) | Semiconductor laser element | |
| JP2002057400A (en) | Semiconductor device and its manufacturing method | |
| CN109449756B (en) | Semiconductor laser and preparation method thereof | |
| CN107623250A (en) | A kind of long surface-emitting laser of short cavity and its manufacture method | |
| CN114388666B (en) | Superradiation light-emitting diode chip and manufacturing method thereof | |
| CN115051239A (en) | Tunable electroabsorption modulation laser and preparation method thereof | |
| JP6468180B2 (en) | Manufacturing method of optical semiconductor device | |
| CN110277731B (en) | III-V group silicon-based low-refractive-index gap structure DBR laser and integration method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |