CN109873295B - On-chip integrated cascade amplification semiconductor laser - Google Patents
On-chip integrated cascade amplification semiconductor laser Download PDFInfo
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- CN109873295B CN109873295B CN201910308289.6A CN201910308289A CN109873295B CN 109873295 B CN109873295 B CN 109873295B CN 201910308289 A CN201910308289 A CN 201910308289A CN 109873295 B CN109873295 B CN 109873295B
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Abstract
The invention discloses an on-chip integrated cascade amplification semiconductor laser, which comprises a ridge region, an on-chip DBR grating structure, a conical region and an epitaxial waveguide; the DBR grating structure is arranged on the ridge region; the ridge region is of a ridge waveguide structure, and the cone region is of a gain waveguide structure; the epitaxial waveguide has a step thickness, the ridge region is arranged on the thinner side of the epitaxial waveguide, the tapered region is arranged on the thicker side of the epitaxial waveguide, and the ridge region and the tapered region are cascaded. Compared with the traditional laser amplification mode which simply utilizes a conical gain structure, the laser can more fully utilize the conical region gain, and based on the principle of equal luminous flux, the laser can maintain the characteristic of a basic mode while expanding the mode volume, thereby ensuring the optical quality of near-diffraction limit laser and greatly improving the brightness.
Description
Technical Field
The invention relates to the field of semiconductor lasers, in particular to an on-chip integrated cascade amplification semiconductor laser.
Background
Particularly, in recent years, the development trend of the high-power semiconductor laser chip (L D) as a pumping source of an optical fiber laser is extremely rapid, and along with the continuous improvement of the requirement of the optical fiber laser on the output brightness of the semiconductor laser pumping source, the number of the traditional tail fiber pumping source coupling semiconductor laser chips is close to the physical limit, and the output brightness is continuously improved and only the brightness of the chips is improved.
The most ideal fiber laser pump source is the near diffraction limited laser. However, the semiconductor laser chip has poor beam quality in the slow axis direction for various reasons. Although the continuous output power of a single chip of the current 100-micron wide high-power strip laser with a 9 xx-nm waveband can reach 15W-30W, and the electro-optic conversion efficiency can reach more than 65%, the slow-axis beam quality can only reach 10-20 times of the diffraction limit (M2 is 10-20), and the corresponding slow-axis brightness can only reach the level of 10MW/cm2 & sr. The improvement of the brightness can improve the light beam quality and the output power of a single chip. Under the influence of cavity surface damage, nonlinear effect and the like, the maximum output power of the wide chip with the thickness of 100 mu m is limited to about 30W at present, and innovative research on chip design is urgently needed to continuously improve the output power. If the quality of the slow axis light beam of the single chip reaches the diffraction limit, and the output power is increased to the hundred watt level, the brightness of the semiconductor laser single chip can be improved by two orders of magnitude.
Disclosure of Invention
The invention aims to: in view of all or part of the problems, the on-chip integrated cascade amplification semiconductor laser is provided. Through the structural change of the laser, the output power of the laser is improved, and therefore the brightness of the laser is improved.
The technical scheme adopted by the invention is as follows:
an on-chip integrated cascade amplification semiconductor laser comprises a ridge region, an on-chip DBR grating structure, a cone region and an epitaxial waveguide; the DBR grating structure is arranged on the ridge region; the ridge region is of a ridge waveguide structure, and the cone region is of a gain waveguide structure; the epitaxial waveguide has a step thickness, the ridge region is arranged on the thinner side of the epitaxial waveguide, the tapered region is arranged on the thicker side of the epitaxial waveguide, and the ridge region and the tapered region are cascaded.
The traditional mode of carrying out unidirectional amplification on laser through a conical gain structure can ensure that the quality of a light beam is not deteriorated. The design is based on equal luminous flux and combines the design principle of a traveling wave amplifier. The light flux is equal everywhere at each section, so that the gain of the conical region is fully utilized, the fundamental mode characteristic is kept while the mode volume is expanded, the optical quality of the laser close to the diffraction limit is ensured, and the brightness is greatly improved.
Furthermore, the front cavity surface of the tapered region is an inclined cavity surface.
The design of the tilted-cavity facet structure can reflect laser light back into the ridge-region waveguide in an efficient manner to affect the emission of the laser light, thereby preventing degradation of the laser light.
Further, the inclined cavity surface of the conical area has an inclination angle of 80 degrees.
Furthermore, the inclined cavity surface of the conical area is coated with an antireflection film.
Plating an anti-reflective film can further improve the anti-reflection properties of the sloped cavity surface.
Furthermore, the front cavity surface and the rear cavity surface of the laser are coated with antireflection films.
Coating the front and back cavity surfaces of the laser with antireflection films can further prevent the output laser light from reflecting back to the laser, thereby preventing deterioration of the laser light.
Further, the reflectance of the antireflection film is 0.1%.
Furthermore, a separation electrode structure is arranged between the ridge-shaped area and the cone-shaped area.
Due to the design of the electrode separation structure, the transmission of laser can be realized, and thus the single-stage amplification of the laser is realized.
Furthermore, the side of the ridge region close to the back cavity surface of the laser and the cascade region of the ridge region and the taper region are both provided with DBR grating structures.
By means of the DBR grating structure, beam combination of multiple paths of laser can be achieved, and therefore power of seed laser is improved.
Furthermore, 1000 pairs of DBR gratings are arranged on the side, close to the rear cavity surface of the laser, of the ridge region, and 100 pairs of DBR gratings are arranged in the cascade region of the ridge region and the tapered region.
Further, the epitaxial waveguide of the tapered region has a step thickness.
The step thickness is to perform multi-stage cascade between the waveguides in the tapered region, so as to realize multi-stage expansion of the gain structure of the laser, thereby further improving the gain effect of the laser.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the laser provided by the invention makes full use of the gain waveguide, and based on the design idea of equal luminous flux and traveling wave amplification, the laser keeps the characteristics of the basement membrane while expanding the mode volume, so that the output laser keeps the optical quality close to the diffraction limit, and the brightness of the laser is greatly improved.
2. The laser device of the invention skillfully utilizes the optical reflection principle and utilizes the inclined processing of the waveguide cavity surface, thereby effectively preventing the laser from being fed back to the laser device to influence the seed laser or output laser and effectively preventing the laser from deteriorating.
3. The laser can realize cascade expansion of multiple gains, and further can realize further improvement of laser output power.
4. The design adopts an electrode separation mode to design the laser, so that unidirectional amplification of laser can be realized, and the quality and gain of the laser are effectively ensured.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a schematic top view of an on-chip integrated cascade amplifying semiconductor laser.
Fig. 2 is a schematic diagram of a stepped epitaxial waveguide structure.
FIG. 3 is a schematic side view of a sloped cavity face configuration.
Fig. 4 is a perspective view of an on-chip integrated cascade amplifying semiconductor laser.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification (including any accompanying claims, abstract) may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
As shown in fig. 3 and 4, the present embodiment discloses an on-chip integrated cascade amplifying semiconductor laser, which includes a ridge region 10, an on-chip DBR (distributed Bragg reflector) grating structure 103, a tapered region 20, and an epitaxial waveguide with a first-order step thickness; the DBR grating structure 103 is disposed on the ridge region 10; the ridge region 10 is of a ridge waveguide structure, and the cone region 20 is of a gain waveguide structure; the design is characterized in that the ridge region 10 is arranged on the thinner side of the epitaxial waveguide, the tapered region 20 is arranged on the thicker side of the epitaxial waveguide, and the ridge region 10 and the tapered region 20 are cascaded. The luminous flux is equal at each section, so that the gain is fully utilized, the fundamental mode characteristic is kept while the mode volume is expanded, the optical quality is kept, and the brightness is improved. The length of the tapered region 20 is twice or more than that of the ridge region 10. To improve the laser gain. The tapered front facet is a slanted facet 305 so that no laser light is fed back into the ridge waveguide 102 from the tapered waveguide 104. The sloped cavity surface 305 is shown coated with an anti-reflective film 306 to further prevent the laser light from reflecting back into the ridge waveguide 102. As shown in fig. 4, there is a separate electrode structure between the ridge region 10 and the tapered region 20. I.e. the ridge region 10 and the two electrodes above the tapered region 20 are separated and not directly connected. Referring to fig. 4, the first electrode 106 and the second electrode 107 are designed to be separated. The electrode separation can realize the one-way transmission of laser, and the combination of the electrode separation and the laser structure realizes the effect of one-way amplification. The surfaces of the front cavity surface 101 and the back cavity surface 105 of the laser are coated with antireflection films (coating means such as evaporation is adopted to ensure the flatness and strong adhesion of the film layer). To further improve the antireflection property of the cavity surface and prevent laser light from being emitted back to the laser to deteriorate the laser light. In one embodiment, the reflectivity of the anti-reflective films of the laser front facet 101, the laser back facet 105, and the tapered region slanted facet 305 are all 0.1%.
The DBR grating structure 103 provided in the ridge region 10 is specifically: the DBR grating structure 103 is arranged on the side close to the laser back cavity surface 101 and in the cascade region of the ridge region 10 and the tapered region 20. Therefore, multi-channel laser beam combination is realized, and the laser power is greatly improved.
As shown in fig. 1 and 2, in one embodiment, the laser structure is as follows:
reference numerals: 201 is a ridge region lower limiting layer, 202 is a ridge region lower waveguide layer, 203 is a ridge region quantum well layer, 204 is a ridge region upper waveguide layer, 205 is a ridge region upper limiting layer, 206 is a cone region lower limiting layer, 207 is a cone region lower waveguide layer, 208 is a cone region quantum well layer, 209 is a cone region upper waveguide layer, and 210 is a cone region upper limiting layer; 301 is an epitaxial waveguide layer, 302 is an epitaxial waveguide upper confinement layer, 303 is an epitaxial waveguide lower confinement layer, and 304 is a base layer.
And (3) epitaxial structure:
a base layer of 350 μm, a ridge region lower confinement layer of 700nm, a ridge region lower waveguide layer of 1700nm, a ridge region quantum well of 10nm, a ridge region upper waveguide layer of 700nm, a ridge region upper confinement layer of 700nm, a ridge region contact layer (on the ridge region upper confinement layer upper surface, not shown) of 200 nm; a tapered region lower confinement layer 700nm, a tapered region lower waveguide layer 1700nm, a tapered region quantum well 10nm, a tapered region upper waveguide layer 1400nm, a tapered region upper confinement layer 700nm, a tapered region contact layer (on the tapered region upper confinement layer upper surface, not shown) 200 nm.
Chip structure:
1) length of ridge region: 1 mm;
2) width of ridge region: 5 μm;
3) etching depth of ridge region: 1.0 μm;
4) bragg mirror (DBR) grating: etching depth is 1.3 μm, period is 300nm, the back logarithm of ridge region is 1000 pairs, and ridge and cone cascade region is 100 pairs;
5) angle of taper: 4 degrees;
6) length of the tapered zone: 4 mm;
7) etching depth of the conical area: 200 nm;
8) front cavity surface of the conical zone: the inclination angle is 80 degrees, and the etching depth is 3.5 mu m; adopting solution corrosion or dry etching; to ensure the smoothness of the etched surface;
9) coating a film on the cavity surface: the reflectivities of the anti-reflection films of the front cavity surface of the tapered region, the front cavity surface of the laser and the back cavity surface are all 0.1 percent, and the coating is plated by adopting an evaporation method.
In one embodiment, the substrate 304 of the epitaxial waveguide is GaN, GaAs, or InP.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (10)
1. An on-chip integrated cascade amplification semiconductor laser comprises a ridge region, an on-chip DBR grating structure, a cone region and an epitaxial waveguide; the DBR grating structure is arranged on the ridge region; the ridge-shaped region is of a ridge-shaped waveguide structure, and the cone-shaped region is of a gain waveguide structure; the epitaxial waveguide is characterized in that the epitaxial waveguide is provided with a step thickness, the ridge region is arranged on the thinner side of the epitaxial waveguide, the taper region is arranged on the thicker side of the epitaxial waveguide, and the ridge region and the taper region are cascaded.
2. The on-chip integrated cascade amplifying semiconductor laser as claimed in claim 1 wherein the tapered region front facet is a sloped facet.
3. The on-chip integrated cascade amplifying semiconductor laser as claimed in claim 2 wherein the inclined cavity facet of the tapered region is inclined at an angle of 80 degrees.
4. The on-chip integrated cascade amplifying semiconductor laser as claimed in claim 2 wherein the inclined cavity facet surfaces of the tapered regions are coated with an anti-reflective coating.
5. The on-chip integrated cascade amplifying semiconductor laser as claimed in claim 1 wherein the front facet and the back facet of the laser are each coated with an anti-reflective coating.
6. An on-chip integrated cascade amplification semiconductor laser as claimed in claim 4 or 5 wherein the anti-reflective film has a reflectivity of 0.1%.
7. The on-chip integrated cascade amplifying semiconductor laser as claimed in claim 1 wherein the epitaxial waveguide of the tapered region has a stepped thickness.
8. An on-chip integrated cascade amplifying semiconductor laser as claimed in any of claims 1-5 and 7 wherein there is a split electrode structure between said ridge and taper regions.
9. An on-chip integrated cascade amplifying semiconductor laser as claimed in any of claims 1-5 and 7 wherein the ridge region is provided with a DBR grating structure on the side of the laser back cavity and the cascade of ridge and taper regions.
10. An on-chip integrated cascade-amplifying semiconductor laser as claimed in claim 8 wherein 1000 pairs of DBR gratings are provided on the side of the ridge region closer to the rear cavity of the laser, and 100 pairs of DBR gratings are provided in the cascade region of the ridge region and the tapered region.
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| CN110336179B (en) * | 2019-07-11 | 2021-05-04 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor epitaxial structure, preparation method thereof and semiconductor active photoelectric device |
| CN111326952A (en) * | 2020-02-10 | 2020-06-23 | 中国工程物理研究院应用电子学研究所 | Spectrum beam combining device based on-chip regulation and control semiconductor laser chip |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN113594851B (en) * | 2021-06-15 | 2023-06-02 | 中国工程物理研究院应用电子学研究所 | High-brightness conical semiconductor laser |
| CN114094442A (en) * | 2021-11-10 | 2022-02-25 | 海南师范大学 | Dual-wavelength quantum cascade semiconductor laser chip |
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