CN113258447B - Semiconductor laser array and preparation method thereof - Google Patents

Semiconductor laser array and preparation method thereof Download PDF

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CN113258447B
CN113258447B CN202110542322.9A CN202110542322A CN113258447B CN 113258447 B CN113258447 B CN 113258447B CN 202110542322 A CN202110542322 A CN 202110542322A CN 113258447 B CN113258447 B CN 113258447B
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array
type
waveguide
layer
semiconductor laser
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CN113258447A (en
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贾鹏
梁磊
陈泳屹
秦莉
宁永强
王立军
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Abstract

The invention provides a semiconductor laser array and a preparation method thereof, wherein the semiconductor laser array comprises an epitaxial structure, a laser waveguide structure is prepared on the epitaxial structure, the laser waveguide structure comprises a variable-period high-order grating array and a ridge gain waveguide array which are etched from a reflecting surface to an emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, and the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements; the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array. The semiconductor laser array provided by the invention can ensure that the spectral line width of output laser is less than 0.5nm and does not exceed the absorption spectrum range of alkali metal elements, and the central wavelength of a laser spectrum is basically coincided with the absorption spectrum peak value of the alkali metal elements, thereby effectively improving the light-light coupling efficiency of the pumping laser array and the alkali metal elements.

Description

Semiconductor laser array and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser array and a preparation method thereof.
Background
The semiconductor laser array is a device which utilizes photon stimulated emission caused by photon transition in a semiconductor to generate laser, has the advantages of high output power, high electro-optic conversion efficiency, good beam quality, narrow laser line width and the like, and has wide application prospect in the pumping field of high-power lasers such as solid lasers, optical fiber lasers, alkali metal lasers and the like. The alkali metal vapor laser is an optical pumping gas laser which takes vapor of alkali metal elements of potassium, rubidium and cesium as a gain medium, the absorption spectrum line of alkali metal atom vapor of rubidium, cesium and the like is narrow (the spectrum width is 0.5nm after 2.0265 multiplied by 106Pa helium is added), the absorption spectrum peak is mainly distributed in a near infrared region of a wave band of 760nm to 894nm, and high requirements are provided for the output power and the laser line width of a semiconductor laser which is taken as a pumping source for improving the light-light conversion efficiency.
The existing semiconductor laser array mainly comprises high-power devices such as a wide strip waveguide laser array, a tapered waveguide laser array, a single-mode waveguide array and the like. Although semiconductor laser arrays make great progress in improving output power and optimizing beam quality, various problems still exist in various types of array devices under the condition of large current injection (15-20 times of threshold current):
the wide strip waveguide laser array is generally composed of 19 laser units with the strip width of 100-200 μm, the center distance of each laser unit is 500 μm, and under the condition of large current injection, because the wide strip waveguide has no restriction and selection effect on a high-order mode, the situation that a basic transverse mode and the high-order transverse mode oscillate simultaneously can occur, although the situation is favorable for improving the output power of a laser linear array, the multi-transverse mode operation causes the light beam quality of a device to be poor, meanwhile, because the wide strip waveguide laser array only focuses on the improvement of the power, the improvement of the laser line width is not considered, and the laser line width is generally 3-5 nm.
The center spacing of each laser unit of the tapered waveguide laser linear array is also 500 micrometers, the width of a ridge waveguide part of each laser unit is usually 2-6 micrometers, the taper angle of each tapered waveguide is usually 4-6 degrees, the tapered waveguide can keep good single transverse mode operation under low current injection, but a high-order transverse mode still appears in a tapered region under the condition of high current injection, and further a light wire is formed, so that the quality performance of light beams of a device is reduced. Meanwhile, because the tapered laser array usually adopts the grating with the same period, the laser linewidth can be widened to about 1nm under the injection of large current.
The laser units of the single-mode waveguide array adopt ridge waveguide structures with the strip width of 3-6 mu m, the interval of each laser unit is usually 30-100 mu m, high-order transverse modes can be effectively filtered, the single transverse mode can still work under the condition of high power output, but the laser linewidth can still reach 2-3 nm due to the fact that a longitudinal mode selection structure is not introduced, and the pumping requirement of an alkali metal laser cannot be met.
In summary, the conventional semiconductor laser array generally adopts the method of increasing the proportion of the total area of the carrier injection region, increasing the duty ratio of the device to obtain higher output power, and simultaneously adopts a ridge waveguide or a tapered waveguide structure to improve the beam quality of the device, but the devices do not consider that under the condition of large current injection, the internal temperature of each laser unit of the array device is different, the phenomenon of high middle and low two sides is shown, the temperature difference can reach 10 ℃ to 20 ℃, and the output laser line width of the laser array is sharply widened to 1nm to 5nm, and greatly exceeds the absorption spectrum range of alkali metal elements, so that the light-light conversion efficiency in the pumping process is reduced, and the conventional semiconductor laser array is not suitable for being used as a pumping source of high-performance alkali metal laser.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a semiconductor laser array and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following specific technical scheme:
the semiconductor laser array provided by the invention comprises an epitaxial structure, wherein a laser waveguide structure is prepared on the epitaxial structure, the laser waveguide structure comprises a variable-period high-order grating array and a ridge gain waveguide array which are formed by etching from a reflecting surface to an emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, and the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements; the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array.
Preferably, the epitaxial structure comprises an N-type substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type highly doped cover layer which are sequentially prepared from bottom to top.
Preferably, the variable period higher order grating array is etched from the P-type highly doped cap layer down to the P-type waveguide layer or P-type cladding layer.
Preferably, the array of ridge gain waveguides is etched down from the P-type highly doped cap layer to the P-type waveguide layer.
Preferably, a P-side metal electrode is formed on the top surface of the P-type highly doped cover layer, and an N-side metal electrode is formed on the bottom surface of the N-type substrate layer.
Preferably, the end face of the variable period high-order grating array is plated with a high-reflection film, and the end face of the ridge-shaped gain waveguide array is plated with an anti-reflection film.
The preparation method of the semiconductor laser array provided by the invention comprises the following steps:
s1, preparing an epitaxial structure;
s2, preparing a laser waveguide structure on the epitaxial structure; the variable-period high-order grating array and the ridge gain waveguide array which form the laser waveguide structure are etched from the reflecting surface to the emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of the output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements, and the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array.
Preferably, step S1 specifically includes:
preparing an N-type substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type high-doping cover layer from bottom to top in sequence to form an epitaxial structure.
Preferably, step S2 specifically includes:
etching from the P-type high-doping cover layer to the P-type waveguide layer or the P-type cladding layer to form a variable-period high-order grating array; and the number of the first and second groups,
a ridge gain waveguide array is formed by etching down from the P-type highly doped cap layer to the P-type waveguide layer.
Preferably, the following steps are further included after step S2:
s3, manufacturing a P-surface metal electrode on the top surface of the P-type high-doping cover layer, and manufacturing an N-surface metal electrode on the bottom surface of the N-type substrate layer;
and S4, plating a high-reflection film on the end face of the variable-period high-order grating array, and plating an anti-reflection film on the end face of the ridge-shaped gain waveguide array.
The invention can obtain the following technical effects:
the variable-period high-order grating array 1 can provide reflection spectrums with different peak values, the peak values of the reflection spectrums are gradually increased from the center to two sides, when each laser unit works under a high-current condition, the laser wavelength temperature drift of the laser unit positioned in the center is maximum, so that smaller reflection spectrum peak values are needed, the central wavelength distribution of the emission spectrum of each laser unit in the whole laser array is in a 0.1nm interval, the reflection spectrums are basically consistent with the absorption spectrum of an alkali metal element under the high-current working state, the spectrum of the output laser of the semiconductor laser array 1 does not exceed the absorption spectrum range of the alkali metal element, and the light-light coupling efficiency of a pump laser array and the alkali metal element is effectively improved.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor laser array provided in accordance with an embodiment of the present invention;
FIG. 2 is a left side view of a semiconductor laser array provided in accordance with an embodiment of the present invention;
FIG. 3 is a top view of a semiconductor laser array provided in accordance with an embodiment of the present invention;
FIG. 4 is a flow chart of a method for preparing a semiconductor laser array according to an embodiment of the invention.
Wherein the reference numerals include: the grating array comprises a variable period high-order grating array 1, a ridge gain waveguide array 2, an N-type substrate layer 301, an N-type cladding layer 302, an N-type waveguide layer 303, an active layer 304, a P-type waveguide layer 305, a P-type cladding layer 306, a P-type high-doping cover layer 307, a P-surface metal electrode 308, an N-surface metal electrode 309, a high-reflection film 310 and an anti-reflection film 311.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same reference numerals are used for the same blocks. In the case of the same reference numerals, their names and functions are also the same. Therefore, detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention.
Fig. 1-3 show the structure of a semiconductor laser array provided according to an embodiment of the invention from different angles.
As shown in fig. 1 to fig. 3, the semiconductor laser array provided in the embodiment of the present invention includes an epitaxial structure and a laser waveguide structure prepared on the epitaxial structure, the epitaxial structure includes an N-type substrate layer 301, an N-type cladding layer 302, an N-type waveguide layer 303, an active layer 304, a P-type waveguide layer 305, a P-type cladding layer 306, and a P-type highly doped cap layer 307, which are prepared in sequence from bottom to top, the N-type cladding layer 302, the N-type waveguide layer 303, the active layer 304, the P-type waveguide layer 305, the P-type cladding layer 306, and the P-type highly doped cap layer 307 constitute an epitaxial wafer, and the N-type substrate layer 301 is used as a substrate of the epitaxial wafer and may be a substrate such as N-type doped GaAs, InP, and the like. An epitaxial wafer is grown on the N-type substrate layer 301 using a Metal Organic Chemical Vapor Deposition (MOCVD) method.
In one example of the present invention, the active layer 304 may be a quantum well active layer or a quantum dot active layer, for example, using InGaAs, GaAsP materials. The materials of the N-type cladding layer 302, the N-type waveguide layer 303, the P-type waveguide layer 305, and the P-type cladding layer 306 are, for example, AlGaAs.
In another example of the present invention, a P-side metal electrode 308 is plated on the top surface of the P-type highly doped cap layer 307, and an N-side metal electrode 309 is plated on the bottom surface of the N-type substrate layer 301.
The laser waveguide structure comprises a variable-period high-order grating array 1 and a ridge gain waveguide array 2 which are formed by etching from a reflecting surface to an emergent surface of the laser waveguide structure along the width direction of an epitaxial structure, the variable-period high-order grating array 1 is etched from a P-type high-doping cover layer 307 to a P-type waveguide layer 305 or a P-type cladding layer 306, and the ridge gain waveguide array 2 is etched from the P-type high-doping cover layer 307 to the P-type waveguide layer 305.
The grating and the ridge gain waveguide in the same column form a laser unit, and the variable-period high-order grating array 1 and the ridge gain waveguide array 2 form a plurality of laser units which are arranged at equal intervals.
The variable-period high-order grating array 1 selects a high-order Bragg reflection grating as a high-reflection grating, the period change of the variable-period high-order grating array 1 is gradually increased from the center to two sides, and when the grating period of the laser unit positioned in the center is 11.3 mu m, the grating period positioned at the edge needs to be increased by 10nm-20 nm. The variable-period high-order grating array 1 can provide reflection spectrums with different peak values, the peak values of the reflection spectrums are gradually increased from the center to two sides, when each laser unit works under a high-current condition, the laser wavelength temperature drift of the laser unit positioned in the center is maximum, so that smaller reflection spectrum peak values are needed, the central wavelength distribution of the emission spectrum of each laser unit in the whole laser array is within an interval of 0.1nm, the reflection spectrums are basically consistent with the absorption spectrum of an alkali metal element under the high-current working state, and the output laser spectrum of the semiconductor laser array 1 does not exceed the absorption spectrum range of the alkali metal element. Meanwhile, based on the longitudinal mode selection function of the high-order grating, the spectral line width of each laser unit is usually 0.04nm, the whole line width of the output laser spectrum of the laser array is smaller than 0.5nm, the central wavelength of the laser spectrum is basically overlapped with the absorption spectral peak value of the alkali metal element, the power of the output laser of the semiconductor laser array is subjected to gain amplification by combining the ridge gain waveguide array, the laser with high power and narrow line width is finally output, and the light-light coupling efficiency of the pump laser array and the alkali metal element is effectively improved.
In a specific example of the present invention, a high reflection film 310 is coated on the end face of the variable period high order grating array 1, and an antireflection film 311 is coated on the end face of the ridge gain waveguide array 2.
The above details describe the semiconductor laser array structure provided by the embodiment of the present invention, and the embodiment of the present invention further provides a preparation method of the semiconductor laser array, corresponding to the semiconductor laser array structure.
FIG. 4 shows a flow chart of a method for preparing a semiconductor laser array according to an embodiment of the invention.
As shown in fig. 4, the method for preparing a semiconductor laser array according to an embodiment of the present invention includes the following steps:
and S1, preparing an epitaxial structure.
The epitaxial structure comprises an N-type substrate layer and an epitaxial wafer, wherein the N-type substrate layer is used as a substrate of the epitaxial wafer, and the epitaxial wafer is prepared on the N-type substrate layer.
In the process of preparing the epitaxial structure, an N-type substrate (which may be an N-type doped GaAs, InP, or the like) is prepared, and then an epitaxial wafer is grown on the N-type substrate layer by using a Metal Organic Chemical Vapor Deposition (MOCVD) method.
The epitaxial wafer comprises an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type high-doping covering layer which are sequentially prepared from bottom to top.
S2, preparing a laser waveguide structure on the epitaxial structure; the variable-period high-order grating array and the ridge gain waveguide array which form the laser waveguide structure are etched from the reflecting surface to the emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of the output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements, and the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array.
Etching from the P-type high-doping cover layer to the P-type waveguide layer or the P-type cladding layer by photoetching and plasma etching to form a variable-period high-order grating array, and etching from the P-type high-doping cover layer to the P-type waveguide layer by photoetching and plasma etching to form a ridge gain waveguide array.
The grating and the ridge gain waveguide in the same column form a laser unit, and the variable-period high-order grating array and the ridge gain waveguide array form a plurality of laser units which are arranged at equal intervals.
The variable-period high-order grating array selects a high-order Bragg reflection grating as a high-reflection grating, the period change of the variable-period high-order grating array is gradually increased from the center to two sides, and when the grating period of the laser unit positioned in the center is 11.3 mu m, the grating period positioned at the edge needs to be increased by 10nm-20 nm. The variable-period high-order grating array can provide reflection spectrums with different peak values, the peak values of the reflection spectrums are gradually increased from the center to two sides, when each laser unit works under a high-current condition, the laser wavelength temperature drift of the laser unit positioned in the center is maximum, so that smaller reflection spectrum peak values are needed, the central wavelength distribution of the emission spectrums of each laser unit in the whole laser array is within an interval of 0.1nm, the reflection spectrums are basically consistent with the absorption spectrums of alkali metal elements under the high-current working state, and the output laser spectrums of the semiconductor laser array do not exceed the absorption spectrum range of the alkali metal elements. Meanwhile, based on the longitudinal mode selection function of the high-order grating, the spectral line width of each laser unit is usually 0.04nm, the whole line width of the output laser spectrum of the laser array is smaller than 0.5nm, the central wavelength of the laser spectrum is basically overlapped with the absorption spectral peak value of the alkali metal element, the power of the output laser of the semiconductor laser array is subjected to gain amplification by combining the ridge gain waveguide array, the laser with high power and narrow line width is finally output, and the light-light coupling efficiency of the pump laser array and the alkali metal element is effectively improved.
The following two steps are also included after step S2:
and S3, manufacturing a P-surface metal electrode on the top surface of the P-type high-doping cover layer, and manufacturing an N-surface metal electrode on the bottom surface of the N-type substrate layer.
After etching out the ridge-shaped gain waveguide, a P-surface metal electrode is firstly manufactured on the top surface of the P-type high-doping cover layer, then the N-type substrate layer is thinned, and an N-surface metal electrode is manufactured on the bottom surface of the thinned N-type substrate layer.
And S4, plating a high-reflection film on the end face of the variable-period high-order grating array, and plating an anti-reflection film on the end face of the ridge-shaped gain waveguide array.
After the P-surface metal electrode and the N-surface metal electrode are manufactured, a high-reflection film is plated on the end face of the variable-period high-order grating array, and an anti-reflection film is plated on the end face of the ridge-shaped gain waveguide array.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. A semiconductor laser array comprises an epitaxial structure and is characterized in that a laser waveguide structure is prepared on the epitaxial structure, the laser waveguide structure comprises a variable-period high-order grating array and a ridge-shaped gain waveguide array which are formed by etching from a reflecting surface to an emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, and the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements; the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array.
2. The semiconductor laser array of claim 1, wherein the epitaxial structure comprises an N-type substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type highly doped cap layer, which are sequentially formed from bottom to top.
3. The semiconductor laser array of claim 2, wherein the variable period higher order grating array is etched from the P-type highly doped cap layer down to the P-type waveguide layer or the P-type cladding layer.
4. The semiconductor laser array of claim 2 wherein the array of ridge gain waveguides is etched down from the P-type highly doped cap layer to the P-type waveguide layer.
5. The semiconductor laser array of claim 3 or 4 wherein a P-side metal electrode is formed on the top surface of the P-type highly doped cap layer and an N-side metal electrode is formed on the bottom surface of the N-type substrate layer.
6. The semiconductor laser array of claim 1, wherein the end face of the variable period high order grating array is coated with a highly reflective film, and the end face of the ridge gain waveguide array is coated with an anti-reflective film.
7. A preparation method of a semiconductor laser array is characterized by comprising the following steps:
s1, preparing an epitaxial structure;
s2, preparing a laser waveguide structure on the epitaxial structure; the variable-period high-order grating array and the ridge gain waveguide array which form the laser waveguide structure are etched from the reflecting surface to the emergent surface of the laser waveguide structure along the width direction of the epitaxial structure, the period of the variable-period high-order grating array is gradually increased from the center to two sides, so that the spectrum of output laser of the semiconductor laser array does not exceed the absorption spectrum range of alkali metal elements, and the ridge gain waveguide array is used for gain amplification of the power of the output laser of the semiconductor laser array.
8. The method for preparing a semiconductor laser array of claim 7, wherein the step S1 specifically comprises:
and sequentially preparing an N-type substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type high-doping cover layer from bottom to top to form the epitaxial structure.
9. The method for preparing a semiconductor laser array of claim 8, wherein the step S2 specifically comprises:
etching down from the P-type highly doped cap layer to the P-type waveguide layer or the P-type cladding layer to form the variable period higher order grating array; and the number of the first and second groups,
the ridge gain waveguide array is formed by etching down from the P-type highly doped cap layer to the P-type waveguide layer.
10. The method for preparing a semiconductor laser array of claim 8, further comprising the following steps after step S2:
s3, manufacturing a P-surface metal electrode on the top surface of the P-type high-doping cover layer, and manufacturing an N-surface metal electrode on the bottom surface of the N-type substrate layer;
and S4, plating a high-reflection film on the end face of the variable-period high-order grating array, and plating an anti-reflection film on the end face of the ridge-shaped gain waveguide array.
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