CN109873295A - A kind of integrated Cascaded amplification semiconductor laser of on piece - Google Patents
A kind of integrated Cascaded amplification semiconductor laser of on piece Download PDFInfo
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- CN109873295A CN109873295A CN201910308289.6A CN201910308289A CN109873295A CN 109873295 A CN109873295 A CN 109873295A CN 201910308289 A CN201910308289 A CN 201910308289A CN 109873295 A CN109873295 A CN 109873295A
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Abstract
The invention discloses a kind of on pieces to integrate Cascaded amplification semiconductor laser comprising ridge area, on piece DBR optical grating construction, tapered area and extension waveguide；DBR optical grating construction is set in the ridge area；Ridge area is ridge waveguide structure, and tapered area is gain waveguide structure；Extension waveguide has single order step-thickness, and ridge area is set to the relatively thin side of extension waveguide, and tapered area is set to the thicker side of extension waveguide, ridge area and tapered area's cascade.The laser of the design is more traditional merely in the way of the laser amplifier of tapered gaining structure, tapered area's gain can more fully be utilized, principle based on equal luminous fluxes, it can be while model volume extends, maintain basic mode characteristic, it ensure that the optical quality of nearly diffraction limit laser, to realize being substantially improved for brightness.
Description
Technical field
The present invention relates to field of semiconductor lasers, especially a kind of on piece integrates Cascaded amplification semiconductor laser.
Background technique
With the innovation of technology, high-power semiconductor laser chip (LD) is quickly grown, and pump light source is used as, civilian
It is widely applied with military field.Especially in recent years, extremely fast as the growth momentum of pump source of optical fiber laser
Suddenly.Continuous promotion with optical fiber laser to semiconductor laser pumping source output brightness demand, traditional tail optical fiber pumping source coupling
The quantity for closing semiconductor laser chip has been approached physics limit, and the brightness of chip can only be promoted by continuing raising output brightness.In addition,
Aperture is total to by high-quality and efficient rate and closes beam, realizes that high-brightness semiconductor laser directly exports and Recent study a new generation is small
One of type, the important channel of lightweight high power laser sources.
Optimal pump source of optical fiber laser is nearly diffraction limit laser.However, due to various aspects, semiconductor
Laser chip is poor in slow-axis direction beam quality.Although the high power stripe laser of current 100 μm wide of 9xx nm wave band
One single chip continuous power output can achieve 15W-30W, and electrical-optical transfer efficiency can achieve 65% or more, but slow axial light
Beam quality can only achieve 10-20 times of diffraction limit (M2=10-20), and corresponding slow axis brightness can only achieve 10MW/cm2sr's
It is horizontal.The promotion of brightness can also improve the output power of single-chip in addition to that can promote beam quality.It is damaged by Cavity surface, is non-
The influence of linear effect etc., current 100 μm of wide chip maximum power output are limited in the level of 30W or so, continue to mention
There is an urgent need to carry out innovative research on chip designs for high-output power.If single-chip slow axis beam quality reaches nearly diffraction
The limit, while output power is increased to hectowatt grade, then the brightness of semiconductor laser single-chip can promote two magnitudes.
Summary of the invention
Goal of the invention of the invention is: for above-mentioned all or part of problem, providing a kind of integrated grade of on piece
Join amplification semiconductor laser.With by realizing the promotion to laser output power to the change on laser structure, thus
Realize the promotion to laser brightness.
The technical solution adopted by the invention is as follows:
A kind of integrated Cascaded amplification semiconductor laser of on piece comprising ridge area, on piece DBR optical grating construction, tapered area
And extension waveguide；DBR optical grating construction is set in the ridge area；Ridge area is ridge waveguide structure, and tapered area is gain
Waveguiding structure；Extension waveguide has single order step-thickness, and ridge area is set to the relatively thin side of extension waveguide, and tapered area is set to extension
The thicker side of waveguide, ridge area and tapered area's cascade.
Tradition is merely in such a way that tapered gaining structure unidirectionally amplifies laser, it is ensured that beam quality not by
Deteriorate.And the design is based on waiting luminous fluxes, and combines the design principle of travelling-wave amplifier.Since luminous flux is at each section
It is equal everywhere, tapered area's gain is made full use of to realize, and then while model volume extension, maintains base
Module feature, ensure that the optical quality of nearly diffraction limit laser, to realize being substantially improved for brightness.
Further, above-mentioned tapered area's front cavity surface is inclination Cavity surface.
The design of inclination Cavity surface structure can return the waveguide of ridge area in an efficient way to influence the transmitting of laser by laser reflection, from
And prevent the deterioration of laser.
Further, the tilt angle of the inclination Cavity surface in above-mentioned tapered area is 80 degree.
Further, the inclination Cavity surface surface plating in above-mentioned tapered area is coated with anti-reflective film.
Plating, which applies anti-reflective film, can be further improved the anti-reflective of inclination Cavity surface.
Further, the front cavity surface of above-mentioned laser and rear facet, which plate, is coated with anti-reflective film.
Applying anti-reflective film in the forward and backward Cavity surface plating of laser can further prevent output laser reflection to return laser, thus
Prevent the deterioration of laser.
Further, the reflectivity of above-mentioned anti-reflective film is 0.1%.
Further, have between above-mentioned ridge area and tapered area and separate electrode structure.
The design of electrode separation structure, may be implemented the propagation of laser, to realize the single-stage amplification of laser.
Further, above-mentioned ridge area is all provided in the cascade area by laser back cavity surface side and ridge area and tapered area
It is equipped with DBR optical grating construction.
By means of DBR optical grating construction, the conjunction beam of multi-path laser may be implemented, to improve the power of seed laser.
Further, laser back cavity surface side is leaned in the ridge area, 1000 pairs of DBR gratings is provided with, in the ridge
The cascade area in area and tapered area is provided with 100 pairs of DBR gratings.
Further, the extension waveguide in above-mentioned tapered area has step-thickness.
So-called step-thickness will carry out multi-stage cascade between tapered area's waveguide, realize that the multistage of laser gain structure is expanded
Exhibition, thus further gain effect of the improving laser device to laser.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1, laser of the invention makes full use of gain waveguide, the design based on equal luminous fluxes and traveling wave amplification
Thinking maintains basement membrane characteristic while model volume extension, makes to export the optical quality that laser keeps nearly diffraction limit, real
Show and laser brightness has been substantially improved.
2, laser of the invention is ingenious is utilized optical reflection principle, is handled using the inclination to waveguide Cavity surface, effectively
It prevents Laser feedback to return laser to influence seed laser or output laser, effectively prevents the deterioration of laser.
3, the cascade extension of more gains may be implemented in laser of the invention, and then may be implemented to laser output power
Further promoted.
4, the design is designed laser by the way of electrode separation, and the unidirectional amplification to laser may be implemented,
To which the quality and gain of laser be effectively ensured.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is that on piece integrates Cascaded amplification semiconductor laser schematic top plan view.
Fig. 2 is ladder extension waveguiding structure schematic diagram.
Fig. 3 is inclination Cavity surface structure schematic side view.
Fig. 4 is that on piece integrates Cascaded amplification semiconductor laser perspective view.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract), unless specifically stated,
It is replaced by other equivalent or with similar purpose alternative features.That is, unless specifically stated, each feature is a series of
An example in equivalent or similar characteristics.
As shown in Figures 3 and 4, present embodiment discloses a kind of on pieces to integrate Cascaded amplification semiconductor laser comprising ridge
Type area 10, on piece DBR (distributed Bragg reflector, distributed Bragg reflector) optical grating construction 103, cone
The extension waveguide of type area 20 and single order step-thickness；DBR optical grating construction 103 is set in ridge area 10；Ridge area 10 is ridge
Type waveguiding structure, tapered area 20 are gain waveguide structure；The characteristics of the design, is that it is relatively thin that ridge area 10 is set to extension waveguide
Side, tapered area 20 are set to the thicker side of extension waveguide, and ridge area 10 and tapered area 20 cascade.Since luminous flux is at each section
It is equal everywhere, to realize making full use of for gain, to maintain basic mode characteristic while model volume extension, keep
Optical quality, realizes the promotion of brightness.Twice or more in ridge area 10 of the length in tapered area 20.To improve laser
Gain.Tapered area's front cavity surface is inclination Cavity surface 305, so that tapered waveguide 104 is without Laser feedback into ridge waveguide 102.Inclination
The performance plating of Cavity surface 305 is coated with anti-reflective film 306, to further prevent laser reflection to return in ridge waveguide 102.As shown in figure 4, ridge
Have between type area 10 and tapered area 20 and separates electrode structure.It is point between two electrodes i.e. on ridge area 10 and tapered area 20
From, indirect connection.It is separate design between electrode 1 and electrode 2 107 referring to attached drawing 4.Electrode separation can be real
The one-way transmission of existing laser, is integrated to the laser structure of the design, realizes the effect unidirectionally amplified.In the ante-chamber of laser
Face 101 and 105 surface of rear facet are coated with anti-reflective film, and (plating painting mode is for example deposited, to ensure that the planarization of film layer is glued with strong
Attached property).To further increase the anti-reflective of Cavity surface, prevent Laser emission from returning laser to deteriorate laser.In one embodiment
In, the reflectivity of the anti-reflective film of the inclination Cavity surface 305 of laser front facet 101, rear facet 105 and tapered area is
0.1%.
Set DBR optical grating construction 103 in ridge area 10 specifically: leaning on 101 side of laser rear facet and ridge
Area 10 and cascade area, tapered area 20 are equal, are provided with DBR optical grating construction 103.To realize the conjunction beam to multi-path laser, substantially
Improve the power of laser.
As shown in Figure 1, 2, in one embodiment, laser structure is as follows:
Appended drawing reference: 201 be ridge area lower limit layer, and 202 be ridge area lower waveguide layer, and 203 be ridge area quantum well layer,
204 be ducting layer in ridge area, and 205 be ridge area upper limiting layer, and 206 be tapered zone lower limit layer, and 207 be waveguide under tapered zone
Layer, 208 be tapered zone quantum well layer, and 209 be ducting layer on tapered zone, and 210 be tapered zone upper limiting layer；301 be extension waveguide
Layer, 302 be extension waveguide upper limiting layer, and 303 be extension waveguide lower limit layer, and 304 be basal layer.
Epitaxial structure:
350 μm of basal layer, ridge area lower limit layer 700nm, ridge area lower waveguide layer 1700nm, ridge area Quantum Well
10nm, ducting layer 700nm in ridge area, ridge area upper limiting layer 700nm, ridge area contact layer is (on ridge area upper limiting layer
Surface is not shown) 200nm；Tapered zone lower limit layer 700nm, tapered zone lower waveguide layer 1700nm, tapered zone Quantum Well 10nm,
Ducting layer 1400nm on tapered zone, tapered zone upper limiting layer 700nm, tapered zone contact layer (in tapered area's upper limiting layer upper surface,
It is not shown) 200nm.
Chip structure:
1) length in ridge area: 1mm；
2) width in ridge area: 5 μm；
3) ridge area etching depth: 1.0 μm；
4) Bragg mirror (DBR) grating: 1.3 μm of etching depth, period 300nm, logarithm 1000 is right behind ridge area,
Ridge and tapered cascade area 100 are right；
5) angle of tapered zone: 4 degree；
6) length of tapered zone: 4mm；
7) tapered zone etching depth: 200nm；
8) front cavity surface in tapered area: 80 degree of inclination angle, 3.5 μm of etching depth；Using solution corrosion or dry etching；To ensure
The planarization of etching surface；
9) cavity surface film coating: the reflectivity of the anti-reflective film of the front cavity surface in tapered area, laser front facet and rear facet is
0.1%, it is plated and is applied using evaporation coating method.
In one embodiment, the substrate 304 of extension waveguide is GaN, GaAs or InP.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (10)
1. a kind of on piece integrates Cascaded amplification semiconductor laser, including ridge area, on piece DBR optical grating construction, tapered area and
Extension waveguide；The DBR optical grating construction is set in the ridge area；The ridge area is ridge waveguide structure, described tapered
Area is gain waveguide structure；It is characterized in that, the extension waveguide has single order step-thickness, the ridge area is set to extension
The relatively thin side of waveguide, the tapered area are set to the thicker side of extension waveguide, the ridge area and tapered area's cascade.
2. on piece as described in claim 1 integrates Cascaded amplification semiconductor laser, which is characterized in that tapered area's ante-chamber
Face is inclination Cavity surface.
3. on piece as claimed in claim 2 integrates Cascaded amplification semiconductor laser, which is characterized in that the tapered area inclines
The tilt angle of oblique Cavity surface is 80 degree.
4. on piece as claimed in claim 2 integrates Cascaded amplification semiconductor laser, which is characterized in that the tapered area inclines
Oblique Cavity surface surface plating is coated with anti-reflective film.
5. on piece as described in claim 1 integrates Cascaded amplification semiconductor laser, which is characterized in that before the laser
Cavity surface and rear facet, which plate, is coated with anti-reflective film.
6. on piece as described in claim 4 or 5 integrates Cascaded amplification semiconductor laser, which is characterized in that the antireflection
The reflectivity of film is 0.1%.
7. on piece as described in claim 1 integrates Cascaded amplification semiconductor laser, which is characterized in that outside the tapered area
Prolong waveguide with step-thickness.
8. the on piece as described in one of claim 1-5,7 integrates Cascaded amplification semiconductor laser, which is characterized in that the ridge
Have between type area and tapered area and separates electrode structure.
9. the on piece as described in one of claim 1-5,7 integrates Cascaded amplification semiconductor laser, which is characterized in that the ridge
Type area is provided with DBR optical grating construction in the cascade area by laser back cavity surface side and ridge area and tapered area.
10. on piece as claimed in claim 8 integrates Cascaded amplification semiconductor laser, which is characterized in that in the ridge area
By laser back cavity surface side, 1000 pairs of DBR gratings are provided with, in the cascade area in the ridge area and tapered area, are provided with 100 pairs
DBR grating.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910308289.6A CN109873295B (en) | 2019-04-17 | 2019-04-17 | On-chip integrated cascade amplification semiconductor laser |
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| CN201910308289.6A CN109873295B (en) | 2019-04-17 | 2019-04-17 | On-chip integrated cascade amplification semiconductor laser |
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| CN109873295A true CN109873295A (en) | 2019-06-11 |
| CN109873295B CN109873295B (en) | 2020-07-31 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336179A (en) * | 2019-07-11 | 2019-10-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor extension structure and preparation method thereof, semiconductor active photoelectric device |
| CN111326952A (en) * | 2020-02-10 | 2020-06-23 | 中国工程物理研究院应用电子学研究所 | Spectrum beam combining device based on-chip regulation and control semiconductor laser chip |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN113594851A (en) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | High-brightness conical semiconductor laser |
| CN114094442A (en) * | 2021-11-10 | 2022-02-25 | 海南师范大学 | Dual-wavelength quantum cascade semiconductor laser chip |
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| US20090078947A1 (en) * | 2007-09-20 | 2009-03-26 | Fujifilm Corporation | Semiconductor light emitting device |
| CN109149359A (en) * | 2018-10-30 | 2019-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of tapered semiconductor laser |
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2019
- 2019-04-17 CN CN201910308289.6A patent/CN109873295B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090078947A1 (en) * | 2007-09-20 | 2009-03-26 | Fujifilm Corporation | Semiconductor light emitting device |
| CN109149359A (en) * | 2018-10-30 | 2019-01-04 | 中国工程物理研究院应用电子学研究所 | A kind of tapered semiconductor laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336179A (en) * | 2019-07-11 | 2019-10-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor extension structure and preparation method thereof, semiconductor active photoelectric device |
| CN111326952A (en) * | 2020-02-10 | 2020-06-23 | 中国工程物理研究院应用电子学研究所 | Spectrum beam combining device based on-chip regulation and control semiconductor laser chip |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN113594851A (en) * | 2021-06-15 | 2021-11-02 | 中国工程物理研究院应用电子学研究所 | High-brightness conical semiconductor laser |
| CN114094442A (en) * | 2021-11-10 | 2022-02-25 | 海南师范大学 | Dual-wavelength quantum cascade semiconductor laser chip |
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| CN109873295B (en) | 2020-07-31 |
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