CN106785907A - Optical module - Google Patents

Optical module Download PDF

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Publication number
CN106785907A
CN106785907A CN201611072875.8A CN201611072875A CN106785907A CN 106785907 A CN106785907 A CN 106785907A CN 201611072875 A CN201611072875 A CN 201611072875A CN 106785907 A CN106785907 A CN 106785907A
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CN
China
Prior art keywords
grating
layer
light path
silica
laser beam
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Pending
Application number
CN201611072875.8A
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Chinese (zh)
Inventor
李洵
林泽锟
张华�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huazhong University of Science and Technology
Hisense Broadband Multimedia Technology Co Ltd
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Huazhong University of Science and Technology
Hisense Broadband Multimedia Technology Co Ltd
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Application filed by Huazhong University of Science and Technology, Hisense Broadband Multimedia Technology Co Ltd filed Critical Huazhong University of Science and Technology
Priority to CN201611072875.8A priority Critical patent/CN106785907A/en
Publication of CN106785907A publication Critical patent/CN106785907A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention discloses a kind of optical module, including：Laser, including resonator, the side of the resonator have inclined end face, for reflecting the laser beam that the resonator the first light path in the horizontal direction sends, export the laser beam the second light path vertically；And silica-based waveguides, the upper surface of the silica-based waveguides is provided with the first grating, for reflecting the laser beam exported by second light path；Wherein, the laser is arranged on the upper surface of the silica-based waveguides, and the laser beam that second light path is exported is coupled to first grating, and laser beam export second light path by first grating light path output in the horizontal direction.The inclined end face that optical module of the invention passes through horizontal-cavity, by the vertical coupled grating to silicon base of laser beam, so as to reduce the coupling loss between light source and silica-based waveguides while improving beam output power.

Description

Optical module
Technical field
The present invention relates to optical module, more particularly to a kind of iii-v and the integrated optical module of silicon substrate.
Background technology
Transparent and with characteristics such as high index-contrasts in communication band based on silica-based waveguides, mixing silicon substrate integrated platform is As the important channel for realizing extensive integreted phontonics, so that silicon substrate light source turns into the focus of people's research.But, because silicon is Indirect band-gap semiconductor, luminous is extremely inefficient, is highly difficult so as to manufacture laser as luminescent material with silicon.Therefore, People mainly propose three kinds of schemes, and homogeneity is integrated, the scheme of hetero-epitaxy and III-V/Si hybrid integrateds.
Homogeneity is integrated mainly to be made nanostructured on silicon materials, mixes rare earth ion and using excited Raman effect three Kind.The problems such as being faced with that luminous efficiency is relatively low mostly, need optical pumping.
Hetero-epitaxy is that face passes through a series of technology growths out preferable semi-conducting material of crystal mass on a silicon substrate, The germanium of III-V and indirect band gap including direct band gap.Iii-v hetero-epitaxy swashs in 1.3um si-based quantum dots in the last few years Obtained compared with ten-strike on light device, but there is also that dynamic characteristic is high, problem without Si waveguide coupling mechanisms.2012, The research team of masschusetts, U.S.A science and engineering is successfully realized the point injection room temperature lasing of Ge/Si lasers, but at practical aspect There is a problem of cannot room temperature continuous-wave lasing, threshold value is excessive and reliability is not enough.
III-V/Si optical modules are more ripe by contrast, according to iii-v chip and the difference of silicon coupled modes, It is divided into vertical coupled optical module and level coupling optical module.Wherein, vertical coupled optical module is that (Vertical Cavity Surface is sent out by VCSEL Penetrate laser) output light second order grating be coupled in silica-based waveguides.But for the VCSEL (Vertical Cavity Surfaces of long wavelength Emitting laser) for, because InP and InGaAsP refringences are low, very thick InP/ is needed in order to reach enough reflectivity The DBR of InGaAsP, on the one hand very high for growth technique requirement, the problem that resistance radiating higher on the other hand can be brought poor, So as to power output is not high.Level coupling optical module is that output light is coupled to by way of closely being docked with silica-based waveguides In silicon, there can be larger power output, but light source and silica-based waveguides coupling loss are larger, and for Alignment Process It is required that very high.
The content of the invention
For the problem that prior art is present, light source and silica-based waveguides can be reduced it is an object of the invention to provide one kind Between coupling loss simultaneously improve beam output power optical module.
To achieve the above object, the one side of the disclosure provides a kind of optical module, including：
Laser, including resonator, the side of the resonator have inclined end face, for reflecting the resonator along water Square to the laser beam that sends of the first light path, export the laser beam the second light path vertically；And
Silica-based waveguides, the upper surface of the silica-based waveguides is provided with the first grating, defeated by second light path for reflecting The laser beam for going out；
Wherein, the laser is arranged on the upper surface of the silica-based waveguides, and described by second light path output swashs Light beam coupling is to first grating, and the laser beam exported second light path by first grating is along level The light path output in direction.
The inclined end face that optical module of the invention passes through horizontal-cavity, by the vertical coupled light to silicon base of laser beam Grid, so as to reduce the coupling loss between light source and silica-based waveguides while improving beam output power.
It should be appreciated that the general description of the above and detailed description hereinafter are only exemplary, this can not be limited It is open.
Brief description of the drawings
Its example embodiment is described in detail by referring to accompanying drawing, above and other target of the disclosure, feature and advantage will Become more fully apparent.
Fig. 1 schematically shows the schematic side view of the optical module according to the embodiment of the disclosure one；
Fig. 2 schematically shows the cross-sectional view of the optical module according to the embodiment of the disclosure one；
Fig. 3 schematically shows the schematic top plan view of the optical module according to the embodiment of the disclosure one；
Fig. 4 A-4D are the simulation result schematic diagram that 2D FDTD are carried out to the optical module of the embodiment of the present disclosure.
Specific embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with various shapes Formula is implemented, and is not understood as limited to example set forth herein；Conversely, thesing embodiments are provided so that the disclosure will more Fully and completely, and by the design of example embodiment those skilled in the art is comprehensively conveyed to.Accompanying drawing is only the disclosure Schematic illustrations, be not necessarily drawn to scale.Identical reference represents same or similar part in figure, thus Repetition thereof will be omitted.
Although it should be understood that various elements, these yuan may be described using term first, second, third, etc. herein Part should not be limited by these terms.These terms are to distinguish an element with another element.
Fig. 1 schematically shows the schematic side view of the optical module according to the embodiment of the disclosure one.As shown in figure 1, optical module Including resonator 1 and silica-based waveguides 2.
Resonator 1 is horizontal-cavity, and it includes cushion 12, Quantum well active district 13, grating layer successively from top to bottom 14 and top covering 15.The upper surface of resonator 1 is provided with electrode 4, and the side of resonator 1 is flat end face, and opposite side is etching The inclined end face 10 of formation, the first light path in the horizontal direction of resonator 1 sends laser beam, after being reflected through inclined end face 10, makes Laser beam the second light path output vertically.
The horizontal-cavity of the present embodiment makes laser beam vertically export using the inclined end face that side is set, and compares In the mode of horizontal-cavity outgoing laser beam in the horizontal direction, and need not be very high Alignment Process, tolerance tolerance is higher, Mode mismatch is small, and coupling efficiency is higher.Additionally, the horizontal-cavity of the present embodiment is compared with vertical cavity, it is not necessary to make Top multilayer DBR speculums, it is easier to make, and have preferably radiating and power output higher.
Bragg grating provides modeling mechanism in iii-v resonator：
λ=2neffΛ
Wherein, λ is laser excitation wavelength, neffIt is resonator equivalent refractive index, Λ is Bragg grating screen periods. And Bragg grating provides feedback, and forward wave is coupled with backward-wave.
Iii-v resonator lasing in the case of electrical pumping goes out laser, and laser is by inclined end face from level side It is reflected onto to exciting and is exported vertically downward.
In the preferred embodiment of the present invention, the end face of the non-slant reflection mirror of resonator 1 is naturally cleaved or plating height Anti- film.
In the preferred embodiment of the present invention, corrosion is also sequentially included between cushion 12 and Quantum well active district 13 Stop-layer, the first wall and the first difference limiting layer (not shown).Between Quantum well active district 13 and grating layer 14 Also sequentially include the second difference limiting layer, the second wall (not shown).
As shown in Fig. 2 in the preferred embodiment of the present invention, resonator 1 has the outwardly ridge that etching is formed 16。
In an optional embodiment, the material of cushion 12 can be InP, and doping concentration is 0.7-2 × 1018/cm3, into Index variation.
The etching-stop layer material can be InGaAsP, and thickness is 10nm, and doping concentration is 0.7 × 1018/cm3。
First material spacer layer can be P-InP, and thickness is 50nm, and doping concentration is 0.7 × 1018/cm3。
Described first respectively limitation layer material can be InGaAsP, thickness is 100nm, is undoped.
The material of the Quantum well active district 13 can be InGaAsP, and quantum well package is containing 6 traps and 7 bases, each trap thickness It is 5nm, each barrier thickness is 10nm, is undoped.
Described second respectively limitation layer material can be InGaAsP, thickness is 100nm, is undoped.
Second material spacer layer can be N-InP, and thickness is 50nm, and doping concentration is 0.5 × 1018/cm3。
The material of the grating layer 14 can be N-InGaAsP, and thickness is 40nm, and doping concentration is 0.5 × 1018/cm3。
The material of the top covering 15 can be InP, and thickness is 2um, and doping concentration is 0.5-1 × 1018/cm3。
It should be noted that the relevant parameter such as the material of each layer of above resonator, thickness and doping concentration is only enumerated An instantiation, protection scope of the present invention is not any limitation as, it can be changed according to actual design requirement.
Silica-based waveguides 2 include that ducting layer 23, the first buried oxide layer 24, reflecting layer 22, second are buried successively from top to bottom Oxide layer 25 and silicon substrate 26.The upper surface of ducting layer 23 is provided with second order grating 20 and single order grating 21, second order grating 20 Position is right against the position of the second light path outgoing laser beam vertically of resonator 1, makes vertically of resonator 1 The laser beam of two light paths output can be irradiated in second order grating 20.Second order grating 20 will vertically irradiate laser thereon Beam is reflected into the 3rd light path along dextrad, the laser beam of the 4th paths along left-hand and the laser for vertically transmiting Beam.Single order grating 10 be located at second order grating 20 left side, can by second order grating 20 along the 4th paths of left-hand laser Beam reflects, so that it unifies output along the 3rd light path of dextrad.The laser beam for vertically transmiting, can be by second order grating 20 The reflecting layer 22 of lower section is reflected, and the laser beam that will be transmitted from second order grating 20 returns second order grating 20 along back reflection.With reference to upper State the explanation to second order grating 20 and single order grating 10, second order grating 20 after the laser beam being reflected back from reflecting layer 20 is received, The laser beam of the 3rd light path along dextrad, the 4th paths along left-hand is reflected into, and is passed along the 4th light path of left-hand The laser beam broadcast is reflected by single order grating 10, so that it unifies output along the 3rd light path of dextrad.
The present embodiment can make laser coupling by setting single order grating, second order grating and reflecting layer in silica-based waveguides The laser beam unification for being bonded to silica-based waveguides is exported by the side of silica-based waveguides, reduces damage of the laser beam coupled to silica-based waveguides Consumption, improves coupling efficiency.
As shown in figure 3, the output end duct width of silica-based waveguides 2 is gradually reduced in one embodiment, it is from duct width W1 It is decreased to duct width W2.
In an optional embodiment, the material of ducting layer 23 is Si, and width can be 220nm for 4um, thickness.
The material of the first buried oxide layer 24 and the second buried oxide layer 25 is SiO2, thickness be respectively 0.65um and 0.9um。
Reflecting layer 22 can be two couples of Si/SiO2Speculum (DBR) to be followed successively by respectively 0.15um from top to bottom thick Si、SiO2And Si.
The thickness of silicon substrate 26 can be 20mm.
The relevant parameters such as the material and size of each layer of above silica-based waveguides are only the instantiations enumerated, not to this hair Bright protection domain is any limitation as, and it can be changed according to actual design requirement.
Because the laser beam of the output of resonator 1 is coupled with silica-based waveguides 2 in vertical coupled form, its coupling efficiency is simultaneously It is not limited by the distance on resonator 1 and the vertical direction of silica-based waveguides 2.Therefore, allowed between resonator 1 and silica-based waveguides 2 There is a air gap, such that it is able to pass through weld layer 4 by the face-down bonding of resonator 1 in silica-based waveguides 2, the chamber of resonator 1 is long Direction is consistent with the bearing of trend of silica-based waveguides 2.Compared with the scheme that resonator and silica-based waveguides are connected with bonding technology, manufacture craft It is simpler.
The silica-based waveguides 2 of above-described embodiment are that buried oxide layer 24,25 and ducting layer 23 are produced on silicon substrate 26, then are divided Optical grating construction and silicon waveguide shapes are not etched, and obtain above-mentioned silica-based waveguides structure.
The resonator 1 of above-described embodiment is the growth iii-v structure in InP substrate, successively grown buffer layer, etch stop Only layer, the first wall, the first difference limiting layer, Quantum well active district, second distinguish limiting layer, the second wall and grating Layer, and go out the pattern of grating by chemical wet etching, then top covering is formed by secondary epitaxy.By iii-v structure side etching Go out skewed slot and carry out cleavage.By iii-v structure face-down bonding on soi chip.The substrate of iii-v structure is removed, and will Remove substrate side and etch the pattern of ridge and electric level, and make electrode.
Fig. 4 A-4D are the simulation result schematic diagram that 2D FDTD are carried out to the optical module of the embodiment of the present disclosure.
If Fig. 4 A are that a mode light is input into iii-v resonator；Fig. 4 B are vertical for input light is reflexed to by slant reflection mirror It is straight to propagate downwards；Fig. 4 C are optically coupled into Si waveguides for part, and some light transmission past is reflected by DBR；Fig. 4 D be part light to By single order optical grating reflection, part light is propagated to the right for left propagation.
The selection of the angle [alpha] of inclined end face 10 and the etching depth of second order grating and screen periods of resonator 1 can be right The coupling efficiency of laser beam produces considerable influence.
Below by Tables 1 and 2 displaying use 2D FDTD for exemplary construction SOI second order gratings etching depth and tiltedly Simulation result of the face mirror angle for coupling efficiency：
Table 1
Table 1 is under each group of etching depth, scanning obtains optimal second order grating cycle and optimistic coupling efficiency.Can see Arrive, in the case where ensureing the second order grating cycle for optimal screen periods under the etching depth, coupling efficiency is with etching depth Increase, first increase, reduce afterwards, etching depth be 0.11um when be optimal, be 76.0% coupling efficiency.
Table 2
Angle Screen periods/um Coupling efficiency
42 0.641 0.694
43 0.641 0.756
44 0.635 0.792
45 0.634 0.760
46 0.631 0.694
Table 2 is under each group of slant reflection mirror angle, scanning obtains optimal second order grating cycle and optimistic coupling efficiency. Can obtain under 44 degree of slant reflection mirror angles, it is 79.2% to have highest coupling efficiency.
More than it is particularly shown and described the illustrative embodiments of the disclosure.It should be appreciated that the disclosure is not limited In detailed construction described herein, set-up mode or implementation method；Conversely, the disclosure is intended to cover be included in appended claims Spirit and scope in various modifications and equivalence setting.

Claims (10)

1. a kind of optical module, it is characterised in that including：
Laser, including resonator, the side of the resonator have inclined end face, for reflecting the resonator along level side To the laser beam that sends of the first light path, export the laser beam the second light path vertically；And
Silica-based waveguides, the upper surface of the silica-based waveguides is provided with the first grating, for reflecting what is exported by second light path The laser beam；
Wherein, the laser is arranged on the upper surface of the silica-based waveguides, the laser beam that second light path is exported Coupled to first grating, and the laser beam exported second light path by first grating is in the horizontal direction Light path output.
2. optical module as claimed in claim 1, it is characterised in that the laser beam of first optical grating reflection phase in the horizontal direction The 3rd anti-light path and the output of the 4th light path；The upper surface of the silica-based waveguides is additionally provided with the second grating, by described second The reflection of grating exports the laser beam that the 4th light path is exported along the 3rd light path.
3. optical module as claimed in claim 2, it is characterised in that the silica-based waveguides include silicon substrate and ducting layer, described Ducting layer is arranged on the silicon substrate, and first grating and second grating spacings are arranged on the upper table of the ducting layer Face, reflecting layer is provided between the silicon substrate and the ducting layer, is made through first grating by the reflecting layer Laser beam retroeflection is exported to first grating with along the 3rd light path.
4. optical module as claimed in claim 1, it is characterised in that the etching depth of first grating is 0.07-0.17um, The screen periods of first grating are 0.579-0.721um.
5. optical module as claimed in claim 1, it is characterised in that the resonator also has a bottom surface, the inclined end face and It is at an angle between the bottom surface, the angle ranging from 42-46 degree.
6. optical module as claimed in claim 1, it is characterised in that the silica-based waveguides are SOI waveguides, the laser is Iii-v laser.
7. optical module as claimed in claim 1, it is characterised in that the resonator also has bottom surface, the bottom of the resonator Face is welded on the upper surface of the silica-based waveguides, has gap between first grating and the bottom surface of the resonator.
8. optical module as claimed in claim 1, it is characterised in that the resonator include successively cushion, etch stop layer, First wall, the first difference limiting layer, Quantum well active district, the second difference limiting layer, the second wall, grating layer and upper bag Layer.
9. optical module as claimed in claim 8, it is characterised in that the cushioning layer material is InP, the etch stop layer material Expect for InGaAsP, first material spacer layer for P-InP, described first limit layer material for InGaAsP, the amount respectively The sub- material of trap active area 3 limits layer material for InGaAsP, second material spacer layer are respectively for InGaAsP, described second N-InP, the grating layer material are N-InGaAsP, the top covering material is InP.
10. optical module as claimed in claim 1, it is characterised in that the silica-based waveguides include that ducting layer, first bury oxidation Layer, reflecting layer, the second buried oxide layer and silicon substrate.
CN201611072875.8A 2016-11-29 2016-11-29 Optical module Pending CN106785907A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560462A (en) * 2017-09-27 2019-04-02 中国科学院半导体研究所 Silicon substrate hybrid integrated laser array and preparation method thereof
CN114994833A (en) * 2022-05-07 2022-09-02 上海图灵智算量子科技有限公司 Waveguide and laser comprising same
CN115657205A (en) * 2022-12-13 2023-01-31 香港中文大学（深圳） Photonic integrated chip and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8849080B1 (en) * 2013-01-14 2014-09-30 The United States Of America As Represented By The Secretary Of The Navy Monolithically integrated fiber optic coupler
CN104395798A (en) * 2012-07-30 2015-03-04 惠普发展公司，有限责任合伙企业 Compact photonic platforms
WO2016011002A1 (en) * 2014-07-14 2016-01-21 Biond Photonics Inc. 3d photonic integration with light coupling elements
US20160111852A1 (en) * 2012-11-30 2016-04-21 Oclaro Japan, Inc. Optical device having a substrate and a laser unit that emits light into the substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104395798A (en) * 2012-07-30 2015-03-04 惠普发展公司，有限责任合伙企业 Compact photonic platforms
US20160111852A1 (en) * 2012-11-30 2016-04-21 Oclaro Japan, Inc. Optical device having a substrate and a laser unit that emits light into the substrate
US8849080B1 (en) * 2013-01-14 2014-09-30 The United States Of America As Represented By The Secretary Of The Navy Monolithically integrated fiber optic coupler
WO2016011002A1 (en) * 2014-07-14 2016-01-21 Biond Photonics Inc. 3d photonic integration with light coupling elements

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560462A (en) * 2017-09-27 2019-04-02 中国科学院半导体研究所 Silicon substrate hybrid integrated laser array and preparation method thereof
CN114994833A (en) * 2022-05-07 2022-09-02 上海图灵智算量子科技有限公司 Waveguide and laser comprising same
CN115657205A (en) * 2022-12-13 2023-01-31 香港中文大学（深圳） Photonic integrated chip and preparation method thereof
CN115657205B (en) * 2022-12-13 2023-09-05 香港中文大学（深圳） Photon integrated chip and preparation method thereof

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