CN115224134A - Hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector - Google Patents
Hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 92
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 15
- 239000010980 sapphire Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 12
- 230000003993 interaction Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 8
- 229910052717 sulfur Inorganic materials 0.000 abstract description 4
- 239000011593 sulfur Substances 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005411 Van der Waals force Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 238000010521 absorption reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- -1 tellurium alkene Chemical class 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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Abstract
The invention discloses a hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector. Comprises a sapphire substrate; a silicon waveguide transmission layer is formed on the sapphire substrate; the two-dimensional material layer is positioned on the middle part of the silicon waveguide transmission layer; a chalcogenide stripe waveguide is formed in the middle of the two-dimensional material layer; two electrodes are formed on both sides of the two-dimensional material layer; the chalcogenide cover layer is formed on the silicon waveguide transmission layer and covers the two-dimensional material layer, the chalcogenide strip waveguide and the electrode. The invention relates to a sapphire-silicon-sulfur material mixed waveguide structure with a low intermediate infrared loss, a two-dimensional material is easy to integrate through Van der Waals force and has the working advantage at room temperature, and the interaction between light and substances is greatly enhanced.
Description
Technical Field
The invention belongs to a photoelectric conversion device in the technical field of optical sensing and communication, and particularly relates to a sapphire-silicon-sulfur material-two-dimensional material system hybrid waveguide integrated mid-infrared photoelectric detector.
Background
The mid-infrared band (2-20 μm) is an optical band with great engineering application value. Firstly, the absorption fingerprint (7-20 μm) of a plurality of chemical molecules and biological molecules is contained, and the absorption fingerprint can be used for chemical gas sensing and biological information sensing. It contains atmospheric windows (3-5 μm and 8-14 μm) and can be used for thermal imaging, infrared countermeasure, free space communication. The water absorption in the 2 mu m wave band is strong, the penetrability to human tissues is low, and the wind direction tracking device can be used for wind direction tracking and precise surgical operation. The free space communication is a technology without optical fiber point-to-point bidirectional information transmission, and has important significance and wide application prospect in bandwidth access, wide area network and metropolitan area network expansion, local area network interconnection, deep space communication and the like. In the application, functional devices such as a mid-infrared laser, an amplifier, an optical switch, an optical modulator, a detector, a wavelength division multiplexer, a power divider and the like cannot be used. Currently, mid-infrared photodetectors are mainly based on conventional narrow bandgap semiconductor materials, such as HgCdTe alloy, iii-v, and iii-v compounds. However, these materials mainly adopt epitaxial growth methods such as molecular beam epitaxy and metal organic chemical vapor deposition, and the growth cost is high, and at the same time, a strict cooling environment is required.
In addition, due to heterogeneous integration of the materials and silicon, problems of lattice mismatch and the like exist, and the wide application and popularization of the traditional infrared detector are severely limited. Mid-infrared photodetectors based on conventional materials currently generally employ free-space geometry, limiting integration with other photonic devices such as lasers, modulators.
Disclosure of Invention
In order to improve the detection bandwidth, the responsivity and the signal-to-noise ratio of the current infrared photoelectric detector with the wave band of 3-5 microns at room temperature, the embodiment of the invention aims to provide the mixed waveguide integrated intermediate infrared photoelectric detector based on a sapphire-silicon-chalcogenide glass-two-dimensional material system, and the high-responsivity detector is realized through the strong interaction of a two-dimensional material and TE0 mode light; the advantages of waveguide integration and miniaturization are utilized to realize ultrahigh bandwidth detection; high signal-to-noise ratio detection is realized by constructing a heterojunction of the two-dimensional material and other materials.
The technical scheme adopted by the invention comprises the following steps:
comprises a sapphire substrate;
the silicon waveguide transmission layer is formed on the sapphire substrate;
the two-dimensional material layer is positioned on the middle part of the silicon waveguide transmission layer;
comprises a chalcogenide stripe waveguide formed on the middle of a two-dimensional material layer;
comprises two electrodes respectively formed on two sides of a two-dimensional material layer;
the two-dimensional silicon waveguide structure comprises a chalcogenide cover layer which is formed on a silicon waveguide transmission layer and covers a two-dimensional material layer, a chalcogenide strip waveguide and an electrode.
The two electrodes are connected to an external detection control circuit for outputting an electrical signal for detection.
And etching and removing the chalcogenide cover layer without arranging the chalcogenide cover layer above the electrode.
And the silicon waveguide transmission layer and the chalcogenide strip waveguide form a hybrid ridge waveguide, and the optical signal in the TE0 mode is transmitted from the hybrid ridge waveguide formed by the silicon waveguide transmission layer and the chalcogenide strip waveguide and strongly interacts with the two-dimensional material layer.
The two-dimensional material layer is a two-dimensional material such as graphene, black phosphorus or tellurium alkene and the like which can realize photoelectric conversion in a middle infrared band, or a heterojunction material formed by the two-dimensional material which can realize photoelectric conversion in the middle infrared band and other zero-dimensional, one-dimensional and two-dimensional materials, or a two-dimensional-three-dimensional heterojunction material formed by the two-dimensional material which can realize photoelectric conversion in the middle infrared band and silicon. In this type of waveguide structure, the two-dimensional material layers may be respectively concentrated at the field intensity maxima of the TE0 mode.
The sapphire substrate is made of sapphire materials.
The graphene layer is made of graphene materials.
The silicon waveguide transmission layer is made of silicon material.
The sulfur system stripWaveguide and chalcogenide capping layers including, but not limited to Ge 23 Sb 7 S 70 And Ge 2 Sb 2 Se 5 A chalcogenide glass material of the composition.
The sapphire substrate, the silicon waveguide layer and the chalcogenide material support the light wave with the wavelength of 3-5 mu m for low-loss transmission. The waveguide layer used includes, but is not limited to, a hybrid ridge waveguide structure composed of a silicon slab layer and a chalcogenide stripe waveguide, and supports TE0 mode optical signal transmission.
The material system has the characteristics of wide infrared window and high optical nonlinearity, so that the device can work in a middle infrared band at low loss.
For a silicon/chalcogenide hybrid waveguide structure, the two-dimensional material is transferred to the lower surface of the chalcogenide waveguide structure.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
the substrate and the waveguide structure support low-loss transmission of signal light with a wave band of 3-5 mu m, and the two-dimensional material and the heterojunction thereof can absorb mid-infrared light and generate photocurrent. Based on the material system, a silicon flat plate/chalcogenide waveguide structure can be prepared, TE0 mode transmission is supported, and the two-dimensional material is transferred at the maximum position of a mode light field, so that the interaction between the two-dimensional material and signal light is greatly enhanced, and the responsivity of the detector is improved.
The invention relates to a sapphire-silicon-sulfur material mixed waveguide structure with a low mid-infrared loss, a two-dimensional material is easy to integrate through Van der Waals force and has the working advantage at room temperature, and a new solution is provided for realizing a high-speed and high-responsivity detector in a mid-infrared band through the interaction of greatly enhanced light and substances.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic diagram illustrating a sapphire substrate/silicon slab waveguide layer/chalcogenide stripe waveguide/chalcogenide cladding structure according to an exemplary embodiment.
Fig. 2 is a TE0 mode field distribution diagram of the sapphire substrate/silicon slab waveguide layer/chalcogenide stripe waveguide/chalcogenide cap layer structure shown in fig. 1.
Figure 3 is a photodetector in the form of a straight waveguide.
Fig. 4 is a photodetector in the form of a microring.
Fig. 5 is a schematic view of the waveguide loss situation of example 1.
In the figure: a sapphire substrate (1); a silicon waveguide transmission layer (2); a two-dimensional material layer (3); an electrode (4); a chalcogenide stripe waveguide (5); a chalcogenide cladding (6).
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
As shown in fig. 1, the structure of the embodied device includes:
comprises a sapphire substrate 1;
the silicon waveguide transmission layer 2 is formed on a sapphire substrate 1 and is integrally prepared on the sapphire substrate 1 by using a bonding process;
the two-dimensional material layer 3 is positioned on the middle part of the silicon waveguide transmission layer 2 and is transferred and prepared on the silicon waveguide transmission layer 2;
comprises a chalcogenide strip waveguide 5 formed in the middle of the two-dimensional material layer 3, and grown on the two-dimensional material layer 3 by thermal evaporation;
two electrodes 4 formed on both sides of the two-dimensional material layer 3, respectively;
the silicon waveguide transmission layer 2 is formed on the silicon waveguide transmission layer 6, specifically, the silicon waveguide transmission layer 2 is grown by thermal evaporation, and the two-dimensional material layer 3, the chalcogenide strip waveguide 5 and the electrode 4 are coated to provide waveguide protection.
The two electrodes 4 are connected to an external detection control circuit for outputting an electric signal for detection.
The chalcogenide capping layer 6 is not disposed on the electrode 4, and the chalcogenide capping layer 6 is etched and removed.
Under the structure, the two-dimensional material layer 3 is positioned between the silicon waveguide transmission layer 2 and the chalcogenide strip waveguide 5 and is positioned in the middle, the two-dimensional material layer 3 is positioned at the strongest position of an optical field, and the action of the two-dimensional material layer 3 and the optical field is enhanced, so that the detection performance is enhanced.
According to the invention, through the structural arrangement of the silicon-chalcogenide glass mixed waveguide, the two-dimensional material is superposed with the strongest position of the optical mode field (silicon-chalcogenide interface position), so that the interaction between light and a substance is enhanced, and the high-performance mid-infrared photoelectric detection effect is realized.
The silicon waveguide transmission layer 2 and the chalcogenide stripe waveguide 5 form a hybrid ridge waveguide, and an optical signal in a TE0 mode propagates from the hybrid ridge waveguide formed by the silicon waveguide transmission layer 2 and the chalcogenide stripe waveguide 5 and strongly interacts with the two-dimensional material layer 3.
The two-dimensional material layer 3 directly interacts with the TE0 mode optical signal, absorbs light and generates an electric signal to realize intermediate infrared band photoelectric conversion, and the generated electric signal is collected by the electrode 4.
The two-dimensional material layer 3 is a two-dimensional material such as graphene, black phosphorus or tellurium alkene which can realize photoelectric conversion in a middle infrared band, or a heterojunction material formed by the two-dimensional material which can realize photoelectric conversion in the middle infrared band and other zero-dimensional, one-dimensional and two-dimensional materials, or a two-dimensional-three-dimensional heterojunction material formed by the two-dimensional material which can realize photoelectric conversion in the middle infrared band and silicon. In this type of waveguide structure, the two-dimensional material layers may be respectively concentrated at the field intensity maxima of the TE0 mode.
FIG. 2 is a field distribution simulation result of the TE0 mode of the waveguide structure of the present invention. The subgraphs are respectively the total field intensity E and the x component E from left to right x Y component E y Z component E z . The electric field component direction is shown, where the z direction is perpendicular to the cross section, which is the light propagation direction.
In particular, the two-dimensional material layer 3 is at a maximum of the total field strength E, while E is also the same x Maximum value of E xmax To (3). X component E of electric field x The polarization direction is parallel to the plane of the two-dimensional material, and can perform strong interaction with the two-dimensional material. Mid-infrared light detection can be achieved by photoelectric conversion of the two-dimensional material 3.
Example 1
A photodetector in the form of a straight waveguide is constructed as shown in fig. 3.
The chalcogenide strip waveguide 5 is a straight waveguide which is linearly arranged along the propagation direction of the optical signal, and the silicon waveguide transmission layer 2, the two-dimensional material layer 3 and the electrode 4 are all linearly arranged on a required waveguide section along the propagation direction of the optical signal to form the structure of the invention. By making the two-dimensional material layer 3 coincide with the strongest position of the mode field in the waveguide, the interaction between light and substance is maximized, and the signal light is detected with high performance.
The two-dimensional material layer 3 is made of tellurine, and the thickness thereof is set to be 50nm at an operating wavelength of 3 μm, and waveguide loss calculation is performed on the upper and lower parts of the chalcogenide waveguide layer 5 without the two-dimensional material layer 3 and with the two-dimensional material layer 3, and the result is shown in fig. 5. It can be seen that, for the same two-dimensional material layer 3, which is respectively located above and below the chalcogenide waveguide layer 5, the loss of the waveguide is greatly different, and the larger the loss of the waveguide is, the stronger the interaction between light and substance is, the higher the photoelectric conversion efficiency is.
Example 2
A photodetector in the form of a microring was constructed as shown in fig. 4.
The chalcogenide strip waveguide 5 comprises a straight waveguide which is linearly arranged along the propagation direction of the optical signal and a micro-ring waveguide which is coupled with the straight waveguide and is positioned beside the straight waveguide, and the silicon waveguide transmission layer 2, the two-dimensional material layer 3 and the electrode 4 are all linearly arranged along the propagation direction of the optical signal on one side of the micro-ring waveguide to form the structure of the invention. In the embodiment, on the basis that the two-dimensional material layer 3 is superposed with the strongest position of the mode field in the waveguide, the interaction between light and substances at the resonance wavelength is further enhanced through the micro-ring resonator, so that the photoelectric conversion efficiency is improved.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (5)
1. The utility model provides an infrared photoelectric detector in integrated two-dimensional material of hybrid waveguide which characterized in that:
comprising a sapphire substrate (1);
comprises a silicon waveguide transmission layer (2) formed on a sapphire substrate (1);
the silicon waveguide transmission layer comprises a two-dimensional material layer (3) positioned on the middle part of a silicon waveguide transmission layer (2);
comprises a chalcogenide stripe waveguide (5) formed on the middle of a two-dimensional material layer (3);
comprises two electrodes (4) respectively formed on both sides of a two-dimensional material layer (3);
comprises a chalcogenide cover layer (6) which is formed on a silicon waveguide transmission layer (2) and covers a two-dimensional material layer (3), a chalcogenide strip waveguide (5) and an electrode (4).
2. The hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector of claim 1, wherein: the two electrodes (4) are connected to an external detection control circuit for outputting an electrical signal for detection.
3. The hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector of claim 1, wherein: and a chalcogenide capping layer (6) is not arranged above the electrode (4), and the chalcogenide capping layer (6) is etched and removed.
4. The hybrid waveguide integrated two-dimensional material mid-infrared photodetector of claim 1, wherein: and a mixed ridge waveguide is formed by the silicon waveguide transmission layer (2) and the chalcogenide strip waveguide (5), and an optical signal in a TE0 mode is transmitted from the mixed ridge waveguide formed by the silicon waveguide transmission layer (2) and the chalcogenide strip waveguide (5) and strongly interacts with the two-dimensional material layer (3).
5. The hybrid waveguide integrated two-dimensional material mid-infrared photoelectric detector of claim 1, wherein: the two-dimensional material layer (3) is a two-dimensional material capable of realizing photoelectric conversion in a middle infrared band, or a heterojunction material formed by the two-dimensional material capable of realizing photoelectric conversion in the middle infrared band and other zero-dimensional, one-dimensional and two-dimensional materials, or a two-dimensional-three-dimensional heterojunction material formed by the two-dimensional material capable of realizing photoelectric conversion in the middle infrared band and silicon.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105700203A (en) * | 2016-04-26 | 2016-06-22 | 电子科技大学 | Planar waveguide type near-and-mid infrared light modulator based on graphene-chalcogenide glass |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN106199838A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of black phosphorus mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN112635589A (en) * | 2020-12-22 | 2021-04-09 | 长沙理工大学 | Silicon nitride ridge waveguide-based embedded graphene photodetector and manufacturing method thereof |
| CN112820827A (en) * | 2021-02-19 | 2021-05-18 | 智汇工场(深圳)科技企业(有限合伙) | Phase-change device and preparation method thereof, optical excitation modulation method and electric excitation modulation method |
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- 2022-07-05 CN CN202210792791.0A patent/CN115224134A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105700203A (en) * | 2016-04-26 | 2016-06-22 | 电子科技大学 | Planar waveguide type near-and-mid infrared light modulator based on graphene-chalcogenide glass |
| CN105759467A (en) * | 2016-05-23 | 2016-07-13 | 电子科技大学 | Intermediate infrared modulator based on black phosphorus chalcogenide glass optical waveguides |
| CN106199838A (en) * | 2016-07-27 | 2016-12-07 | 电子科技大学 | A kind of black phosphorus mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide |
| CN112635589A (en) * | 2020-12-22 | 2021-04-09 | 长沙理工大学 | Silicon nitride ridge waveguide-based embedded graphene photodetector and manufacturing method thereof |
| CN112820827A (en) * | 2021-02-19 | 2021-05-18 | 智汇工场(深圳)科技企业(有限合伙) | Phase-change device and preparation method thereof, optical excitation modulation method and electric excitation modulation method |
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