WO2015081538A1

WO2015081538A1 - Optical modulator and planar photonic device module

Info

Publication number: WO2015081538A1
Application number: PCT/CN2013/088676
Authority: WO
Inventors: 孟超; 杨迎春; 刘耀达; 郝沁汾
Original assignee: 华为技术有限公司
Priority date: 2013-12-05
Filing date: 2013-12-05
Publication date: 2015-06-11
Also published as: CN105264430B; CN105264430A

Abstract

An optical modulator (100), comprising a polymer waveguide (110), at least one first capacitor plate (131), and at least one second capacitor plate (132); said polymer waveguide comprising a core layer (113); said first capacitor plate (131) and second capacitor plate (132) being separated from each other and extending into said core layer (113); the projection of said first capacitor plate (131) and the projection of said second capacitor plate (132) being at least partially coincident in the radial direction of the cross-section; said first capacitor plate (131) and/or second capacitor plate (132) being made of graphene thin film; when a modulated voltage signal is applied between said first capacitor plate (131) and second capacitor plate (132), the graphene optical absorption coefficient in the first capacitor plate (131) and/or the second capacitor plate (132) changing, thereby modulating the light of the polymer waveguide (110). The optical modulator (100) has a small integrated size, low power consumption, and large modulation bandwidth. Also provided is a planar photonic device module (10) comprising said optical modulator (100).

Description

Light modulator and planar photonic device module

Technical field

The present invention relates to the field of communications technologies, and in particular, to a light modulator and a planar photonic device module. Background technique

As a carrier of information transmission, light has a series of advantages such as low power consumption, low delay and large transmission bandwidth. The related technologies including long-distance transoceanic cable transmission to data center server optical interconnection have been relatively mature and successfully commercialized. Current research shows that there are also huge advantages in using optical interconnect technology in inter-chip and on-chip signal transmission applications between boards and boards, and even in the core processor cores, which is sufficient to optimize the overall power consumption of the processor chip. , speed, performance and other parameter indicators.

In opto-electric hybrid printed circuit boards (PCBs, including flexible PCBs, etc.), the commonly used optical signal transmission carrier is a polymer waveguide. The polymer waveguide is used in this application scenario because of the wide variety of polymer materials, simple preparation process, and low cost. Good compatibility (integral form can be integrated), low optical transmission loss (<1 dB/cm), low insertion loss (guided mode field and fiber mode field matching), so the general optoelectronic mixing is required in the integration degree. Application scenarios such as on-board optical interconnection of PCBs have great advantages. In opto-electric hybrid PCBs, modules such as light sources, modulators, optical waveguides, and detectors are generally included. As a basic unit device for converting electrical signals into optical signals, optical modulators play an irreplaceable role in opto-electric hybrid PCBs. In addition, in a planar photonic device (PLC) based on a silica waveguide or a polymer waveguide, it is also commercially valuable to design an optical modulator module that is compatible with existing PLCs and performs well.

The design of the currently used lithium niobate (LiNb0 ₃ ) electro-optic modulator generally follows the following procedure: based on the LiNb0 ₃ substrate material, cutting along the X and z directions of the crystal, and using Ti element diffusion to form a waveguide on the LiNb0 ₃ substrate, And designed the Mach-Zehnder (MZ) modulator structure. The modulation principle of the LiNb0 ₃ electro-optic modulator utilizes the nonlinear secondary electro-optic effect of the LiNb0 ₃ material to adjust the nonlinear refractive index of the material by voltage modulation, and converts the phase modulation of the signal into intensity modulation by the MZ interferometer structure.

The LiNb0 ₃ electro-optic modulator has the following disadvantages: First, since the LiNb0 ₃ material is relatively expensive, and the fabrication of the waveguide and the design of the structure are complicated, the LiNb0 ₃ electro-optic modulator has a high production cost and a complicated manufacturing process. Second, the LiNb0 ₃ electro-optic modulator is typically about 1 mm in length and large in size. Furthermore, the modulation band of the LiNb0 ₃ electro-optic modulator determined by the LiNb0 ₃ material The upper limit of the width is about 40 GHz.

In addition, vertical cavity surface emitting lasers (VCSELs) are used in the prior art to realize signal transmission between modules on an optical PCB by using on-board optical interconnect technology. The specific light source and modulator scheme is as follows: Using a flip-chip packaged VCSEL laser, the electrical signal is modulated onto the optical carrier by means of internal modulation, and then the optical wave loaded with the data information is coupled to the on-chip polymer waveguide by lens coupling or the like. In this method, the optical carrier carrying the data information is generated by an internal modulation type VCSEL laser. The VCSEL laser is coupled to the polymer waveguide by flip-chip packaging, and the following problems exist in actual production: 1. Internal modulation laser and The polymer waveguide is not coupled in one plane, and the alignment precision of the coupling is high. 2. The photoelectric hybrid PCB is integrated in the three-dimensional direction, the system complexity is increased, the integration degree and stability are reduced; 3. The quality and signal bandwidth of the optical signal are affected by Limited to the development of modulated lasers in VCSELs. Summary of the invention

A technical problem to be solved by embodiments of the present invention is to provide an optical modulator and a planar photonic device module, the optical modulator having a small integrated size and high performance.

In a first aspect, a light modulator is provided.

The light modulator includes a polymer waveguide, at least one first capacitor plate, and at least one second capacitor plate, the polymer waveguide including a core layer, the first capacitor plate and the second capacitor plate being separated from each other and Extending into the core layer, the projection of the first capacitor plate at least partially coincides with the projection of the second capacitor plate in a radial direction of the cross section, the first capacitor plate and/or the second The capacitor plate is made of a graphene film, and a modulation voltage signal is applied between the first capacitor plate and the second capacitor plate to change the graphene optical in the first capacitor plate and/or the second capacitor plate The absorption coefficient is such that modulation of the guided light in the polymer waveguide is achieved.

In a first possible implementation of the first aspect, the graphene film is a single layer graphene or an oligo graphene.

In a second possible implementation of the first aspect, the first capacitor plate and the second capacitor plate are parallel to each other.

In conjunction with the second possible implementation of the first aspect, in a third possible implementation, the distance between the first capacitor plate and the second capacitor plate adjacent thereto is 10 nm to 100 nm. . In conjunction with the first to third possible implementations of the first aspect, in a fourth possible implementation, the polymer waveguide further includes an upper cladding layer and a lower cladding layer, the upper cladding layer and the lower cladding layer The layer covers the core layer from opposite sides of the core layer, and the core layer, the lower cladding layer and the upper cladding layer are all made of a non-conductive polymer material.

With reference to the first to third possible implementation manners of the first aspect, in a fifth possible implementation, the number of the first capacitor plates is one, and the number of the second capacitor plates For two, the first capacitor plate is located between two of the second capacitor plates.

With reference to the first to third possible implementations of the first aspect, in a sixth possible implementation, the number of the first capacitor plates is one, and the number of the second capacitor plates For one.

With reference to the first to third possible implementations of the first aspect, in a seventh possible implementation, the number of the first capacitor plates is two or more, and the number of the second capacitors For two or more, the first capacitor plate and the second capacitor plate are alternately arranged in the thickness direction of the core layer.

In an eighth possible implementation of the first aspect, the first capacitor plate is made of a graphene film, and the second capacitor plate is made of a conductive film.

In a ninth possible implementation manner of the first aspect, the light modulator further includes a first contact electrode and a second contact electrode, wherein the first contact electrode is electrically connected to the first capacitor plate, The second contact electrode is electrically connected to the second capacitor plate, and the first contact electrode and the second contact electrode are used to access a modulation voltage signal.

In conjunction with the ninth possible implementation of the first aspect, in a tenth possible implementation, the material of the first contact electrode and the second contact electrode is gold, platinum, a conductive polymer, or indium tin oxide.

In a tenth possible implementation manner of the first aspect, the polymer waveguide has a thickness of 10 micrometers to 20 millimeters (H 敖m, the core layer has a rectangular cross section, and the rectangular cross section has a length and a width 3 meters to 10 microns.

In another aspect, a planar photonic device module is provided.

The planar photonic device module includes a laser, a first driving circuit, a second driving circuit, and a light modulator according to various possible implementations, wherein the first driving circuit is configured to control and drive the laser to emit laser light, A second drive circuit is operative to apply a modulated voltage signal to the light modulator, the laser light from the laser being conducted to the light modulator, the light modulator for modulating the laser light.

In a first possible implementation manner of the second aspect, the planar photonic device module further includes an optical waveguide, the optical waveguide is connected between the laser and the optical modulator, and the optical waveguide is used to The laser light emitted by the laser is conducted to the light modulator.

In a second possible implementation of the second aspect, the laser is a tunable laser or a fixed wavelength laser.

In the present invention, the modulation principle of the light modulator is based on the electrically tunable light absorption characteristics of graphene. Since graphene has ultra-high carrier mobility and ultra-fast carrier relaxation time, it can be effectively combined with optical waveguide design. Enhance the interaction between graphene and the optical mode field, so theoretically a modulation bandwidth of 500 GHz can be achieved. In addition, since the materials used in the light modulator are polymers and graphene, the material cost of both and the preparation cost of the polymer waveguide are relatively low, and large-scale production is expected. The optical modulator has a high modulation bandwidth and a wide optical response range, which can be applied to the application of wavelength division multiplexing. In addition, since the optical modulator is based on a polymer waveguide, the optical mode field of the polymer waveguide is similar to that of the single mode fiber, so the coupling loss between the optical modulator and the fiber optic communication device is almost negligible. Therefore, a single graphene polymer waveguide optical modulator can be used as a unit optoelectronic device for independent packaging applications in the field of optical communication. Optical modulators and fiber-optic communication systems have excellent compatibility and can meet the requirements of optical modulators for large-bandwidth data transmission in the future. Since the absorption of light by single-layer graphene has reached 2.3%, the field strength of the fundamental mode of the polymer waveguide is integrated into the fundamental mode of the polymer waveguide, which effectively enhances the interaction between the graphene and the optical mode field. The device size. The reduction in the size of the light modulator will lead to further improvements in system integration.

DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings to be used in the embodiments will be briefly described below. Obviously, the drawings in the following description are only some of the present invention. For the embodiments, those skilled in the art can obtain other drawings according to the drawings without any creative work.

1 is a schematic cross-sectional view of a light modulator according to a first preferred embodiment of the present invention;

2 is a schematic cross-sectional view of a light modulator according to a second preferred embodiment of the present invention;

3 is a schematic cross-sectional view of a light modulator according to a third preferred embodiment of the present invention;

4 is a block diagram of a preferred embodiment of a planar photonic device module provided by the present invention. detailed description The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

Please refer to FIG. 1 , which is a light modulator 100 according to a first preferred embodiment of the first technical solution of the present invention. The light modulator 100 includes a substrate 101, a lower cladding layer 112, a first contact electrode 121, a second contact electrode 122, a first capacitor plate 131, two second capacitor plates 132, a core layer 113, and an upper package. Layer 111. The upper cladding layer 111, the core layer 113, and the lower cladding layer 112 constitute a polymer waveguide 110.

The substrate 101 is used to carry the polymer waveguide 110, which is in contact with the lower cladding layer 112. The material of the substrate 101 may be silicon or the like having a flat outer surface. The material of the substrate 101 can be selected according to the scene used by the graphite veneer/polymer light modulator 100 to match its application scene.

The core layer 113 is covered by the upper cladding layer 111 and the lower cladding layer 112. Specifically, a portion of the core layer 113 is buried in the lower cladding layer 112, and the remaining portion is buried in the upper cladding layer 111. The lower cladding layer 112 has a larger cross-sectional area than the upper cladding layer 111. The polymer waveguide 110 composed of the upper cladding layer 111, the core layer 113, and the lower cladding layer 112 has a length of 10 μm to 200 μm. The core layer 113 is generally rectangular in cross section, and the cross section of the rectangle is generally 3 to 10 microns in length and width.

The upper cladding layer 111, the lower cladding layer 112 and the core layer 113 are all made of a non-conductive polymer material, and have substantially no absorption of light in the wavelength range of infrared light. Moreover, the materials selected for the upper cladding layer 111, the lower cladding layer 112 and the core layer 113 should be materials whose optical characteristics are relatively stable with changes in environmental humidity and temperature. The upper cladding layer 111 and the lower cladding layer 112 may be made of the same material or may be made of different materials. The materials selected for the upper cladding layer 111 and the lower cladding layer 112 have a lower optical refractive index than the material of the core layer 113. Specifically, the material of the core layer 113 may be decyl decyl acrylate, polystyrene (?8), polycarbonate (PC), polysiloxane or polyimide. (PI) and so on. The non-conductive organic polymer material having a refractive index smaller than that of the core layer 113 described above can be used as the upper cladding layer 111 and the lower cladding layer 112. Specifically, when the transmission laser wavelength is 1550 nm, and decyl methacrylate (refractive index of 1.49) or polystyrene (refractive index of 1.59) is used as the core layer 113, polydidecyl siloxane (PDMS) can be used. The refractive index is 1.4) as the upper cladding layer 111 and the lower cladding layer 112. When polycarbonate (refractive index of 1.61) is used as the material of the core layer 113, UV curing adhesive UV15 (Master Bond Co., USA, The incident rate is 1.52)) as the material of the upper cladding layer 111 and the lower cladding layer 112.

The first contact electrode 121 and the first capacitor plate 131 are connected to each other, and the second contact electrode 122 is connected to the two second capacitor plates 132. In this embodiment, the first contact electrode 121 is disposed on the surface of the lower cladding layer 112, and partially extends into the upper cladding layer 111 and the lower cladding layer 112, and is located in the upper cladding layer 111 and the lower cladding layer 112. The first contact electrode 121 and the first capacitor plate 131 are connected to each other. The first capacitor plate 131 is partially located within the upper cladding layer 111 and the lower cladding layer 112, with the remainder extending into the core layer 113. The second contact electrode 122 is also disposed on the surface of the under cladding layer 112 and partially extends into the upper cladding layer 111 and the lower cladding layer 112. Preferably, the first contact electrode 121 and the second contact electrode 122 are located on opposite sides of the core layer 113. A portion of the second contact electrode 122 located in the upper cladding layer 111 and the lower cladding layer 112 is connected to the second capacitor plate 132, respectively. The second capacitor plates 132 are each partially located within the upper cladding layer 111 and the lower cladding layer 112, with the remaining portions extending into the core layer 113. Further, the two second capacitor plates 132 are parallel to each other and are parallel to the first capacitor plate 131. The first capacitor plate 131 is located between the two second capacitor plates 132. The distance between the first capacitor plate 131 and the second capacitor plate 132 is from 10 nm to 100 nm. Preferably, the first capacitor plate 131 and the second capacitor plate 132 both extend through a central region of the core layer 113, in a direction parallel to the cross section of the core layer 113, the first capacitor pole The projection of the projection of the plate 131 on the second capacitor plate 132 at least partially coincides. Preferably, the position where the first capacitor plate 131 and the second capacitor plate 132 overlap each other is located at the center of the core layer 113, that is, the field mode field intensity of the core layer 113 is extremely large to increase the first capacitor pole. The interaction of the plate 131, the second capacitor plate 132 and the optical mode field.

The first capacitor plate 131 and the second capacitor plate 132 are graphene films. The graphene film may be a single layer of graphene or an oligographene (having an atomic layer of 2 to 10 layers). The material of the first contact electrode 121 and the second contact electrode 122 may be gold or platinum, and the first contact electrode 121 and the second contact electrode 122 may also be a conductive polymer film or an indium tin oxide film.

The first contact electrode 121 and the second contact electrode 122 are connected to an applied voltage, so that the first capacitor plate 131 connected to the first contact electrode 121 serves as a pole of the capacitor plate and is connected to the second contact electrode 122. The second capacitor plate 132 serves as the other pole of the capacitor plate. By applying a voltage of the modulation signal to the first contact electrode 121 and the second contact electrode 122, the first capacitor plate 131 and the second capacitor plate 132 are realized. The carrier doping of graphene changes the optical absorption coefficient of graphene, thereby realizing the light of graphene in the first capacitor plate 131 and the second capacitor plate 132. Modulation of the coefficient of learning.

It can be understood that the optical modulator 100 provided by the embodiment may not directly include the first contact electrode 121 and the second contact electrode 122, and directly connect the first capacitor plate 131 and the second capacitor plate 132 as electrodes to the electrode. The two poles of the power supply.

The first capacitor plate 131 and the second capacitor plate 132 in the present embodiment are all made of a graphene film, because the graphene material itself has an ultra-fast carrier mobility and a very short relaxation time (2 ps). Magnitude). Therefore, the modulation bandwidth of the optical modulator 100 can reach 500 GHz. Also, the length of the polymer waveguide 110 in this embodiment is from 10 μm to 200 μm, and therefore, the length of the polymer waveguide has little influence on the modulation bandwidth of the optical modulator 100. When the light source is guided by the light modulator 100, the data signal can be modulated onto the optical signal if a modulated voltage signal is applied between the two poles.

The modulation principle of the light modulator 100 is based on the electrically tunable light absorption characteristics of graphene. Since graphene has ultra-high carrier mobility and ultra-fast carrier relaxation time, the combination of optical waveguide design can effectively enhance graphene. The interaction with the optical mode field, so theoretically can achieve a modulation bandwidth of 500 GHz. In addition, since the materials used in the light modulator 100 are polymers and graphene, the material cost of both and the preparation cost of the polymer waveguides are relatively low, and large-scale production is expected.

The optical modulator 100 has a high modulation bandwidth and a wide response range of the optical language, and can be applied to a wavelength division multiplexing application scenario. Furthermore, since the optical modulator 100 is based on a polymer waveguide, the optical mode field of the polymer waveguide is similar to that of the single mode fiber, so the coupling loss between the optical modulator and the fiber optic communication device is almost negligible. Therefore, the single graphene polymer waveguide optical modulator 100 can be used as a unit photonic device in a package independent application in the field of optical communication. The optical modulator 100 and the optical fiber communication system have a good compatibility and can meet the requirements of a large-bandwidth data transmission to the optical modulator in the future.

Since the absorption of light by single-layer graphene has reached 2.3%, the field strength of the fundamental mode of the polymer waveguide is integrated into the fundamental mode of the polymer waveguide, which effectively enhances the interaction between the graphene and the optical mode field. The device size. Due to the small size of the light modulator 100, system integration can be improved.

Referring to FIG. 2, a second preferred embodiment of the first technical solution of the present invention provides a light modulator 200. The optical modulator 200 provided in this embodiment is similar to the optical modulator 100 provided in the first embodiment, and the working principle and the functions realized are similar. The light modulator 200 includes a substrate 201, a lower cladding layer 212, a first contact electrode 221, a second contact electrode 222, a first capacitor plate 231, a second capacitor plate 232, a core layer 213, and an upper cladding layer 211. The difference is that the light modulator 200 The number of the two capacitor plates 232 is one.

In other embodiments, when the number of the first capacitor plates 231 is two or two, and the number of the second and second capacitor plates 231 and 232 is two or more, the first capacitor plate 231 The second capacitor plates 232 are alternately arranged in the thickness direction of the core layer 213 and are parallel to each other. The distance between the first capacitor plate 231 and its adjacent second capacitor plate 232 is from 10 nanometers to 100 nanometers.

Referring to FIG. 3, a third preferred embodiment of the first technical solution of the present invention provides a light modulator 300. The optical modulator 300 provided in this embodiment is similar in structure to the optical modulator 200 provided in the second embodiment, and the working principle and the functions realized are similar. The light modulator 300 includes a substrate 301, a lower cladding layer 312, a first contact electrode 321, a second contact electrode 322, a first capacitor plate 331, a second capacitor plate 332, a core layer 313, and an upper cladding layer 311. The difference is that the second capacitor plate 332 of the light modulator 300 is made of a conductive film material. The conductive film has similar dielectric properties to the materials of the core layer 313, the upper cladding layer 311 and the lower cladding layer 312, and the conductive film should have a faster carrier migration speed and relaxation time. The material of the electroconductive film may specifically be polyethylene, polyaniline, polypyrrole, polythiophene, and polyparaphenylene.

Referring to FIG. 4, a preferred embodiment of the second technical solution of the present invention provides a planar photonic device (PLC) module 10, which includes a laser 20, a first driving circuit 30, and an optical waveguide. 40. The second driving circuit 50 and the optical modulator provided by the first technical solution of the present invention. In the present embodiment, the optical modulator 100 provided in the first preferred embodiment of the first aspect is described as an example.

The laser 20 can be a tunable laser or a fixed wavelength laser. The laser 100 is used to emit laser light. The first driving circuit 30 is electrically connected to the laser 100 for controlling and driving the laser 20 to emit laser light. The optical waveguide 40 is connected between the laser 20 and the optical modulator 100 for conducting the laser light emitted from the laser 20 to the optical modulator 100. The light modulator 100 modulates the laser light and outputs it. The second driving circuit 50 is electrically connected to the optical modulator 100 for loading the electrical modulation signal onto the optical modulator 100, thereby realizing modulation of the guided laser light.

Using the light modulator 100 as an on-chip light modulator, a monolithically integrated planar photonic device module 10 of small size, low power consumption, and large bandwidth can be designed. It can be understood that the optical waveguide 40 may not be connected between the laser 20 and the optical modulator 100, and the laser 20 is directly connected to the optical modulator 100, and the laser light emitted by the laser 20 is directly transmitted to the optical modulation. Inside the device 100.

It should be noted that the above embodiments are only for explaining the technical solutions of the present invention, and are not intended to be limiting; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art The scope of the protection is not limited thereto, and any changes or substitutions that are easily conceivable within the scope of the present invention are intended to be included within the scope of the present invention. Therefore, the scope of the invention should be determined by the scope of the claims.

Claims

Rights request

1. An optical modulator, which includes a polymer waveguide, at least one first capacitor plate and at least one second capacitor plate, the polymer waveguide includes a core layer, the first capacitor plate and the second capacitor The plates are separated from each other and extend into the core layer. In the radial direction of the cross-section, the projection of the first capacitor plate and the projection of the second capacitor plate at least partially overlap, and the first capacitor plate The plate and/or the second capacitor plate are made of graphene film, and a modulated voltage signal is applied between the first capacitor plate and the second capacitor plate to change the first capacitor plate and/or the second capacitor plate. The optical absorption coefficient of graphene in the plate is used to modulate the guided light in the polymer waveguide.

2. The light modulator according to claim 1, wherein the graphene film is single-layer graphene or oligo-layer graphene.

3. The light modulator according to claim 1, wherein the first capacitor plate and the second capacitor plate are parallel to each other.

4. The light modulator according to claim 3, wherein the distance between the first capacitor plate and the adjacent second capacitor plate is 10 nanometers to 100 nanometers.

5. The optical modulator according to any one of claims 1 to 4, wherein the polymer waveguide further includes an upper cladding layer and a lower cladding layer, and the upper cladding layer and the lower cladding layer are formed from the core. Opposite sides of the layer cover the core layer, and the core layer, lower cladding layer and upper cladding layer are all made of non-conductive polymer materials.

6. The light modulator according to any one of claims 1 to 4, wherein the number of the first capacitor plates is one, and the number of the second capacitor plates is two, so The first capacitor plate is located between the two second capacitor plates.

7. The optical modulator according to any one of claims 1 to 4, wherein the number of the first capacitor plates is one, and the number of the second capacitor plates is one.

8. The optical modulator according to any one of claims 1 to 4, wherein the number of first capacitor plates is more than two, and the number of second capacitors is more than two, The first capacitor plates and the second capacitor plates are alternately arranged in the thickness direction of the core layer.

9. The light modulator according to claim 1, wherein the first capacitor plate is made of graphene film, and the second capacitor plate is made of conductive film.

10. The light modulator according to claim 1, characterized in that, the light modulator further includes a first contact electrode and a second contact electrode, the first contact electrode is electrically connected to the first capacitor plate. The second contact electrode is electrically connected to the second capacitor plate, and the first contact electrode and the second contact electrode are used to receive a modulated voltage signal.

11. The light modulator according to claim 10, wherein the first contact electrode and the second contact electrode are made of gold, platinum, conductive polymer or indium tin oxide.

12. The optical modulator according to claim 1, wherein the thickness of the polymer waveguide is 10 microns to 200 microns, the cross section of the core layer is rectangular, and the length and width of the rectangular cross section are both 3 microns to 10 microns.

13. A planar photonic device module, including a laser, a first drive circuit, a second drive circuit and the optical modulator according to any one of claims 1 to 12, the first drive circuit being used to control and drive the optical modulator. The laser emits laser light, the second driving circuit is used to apply a modulation voltage signal to the optical modulator, the laser light emitted by the laser is transmitted to the optical modulator, and the optical modulator is used to modulate the laser light. .

14. The planar photonic device module according to claim 13, wherein the planar photonic device module further includes an optical waveguide, the optical waveguide is connected between the laser and the optical modulator, and the optical waveguide The waveguide is used to conduct the laser light emitted by the laser to the light modulator.

15. The planar photonic device module according to claim 13, characterized in that the laser is a tunable laser or a fixed wavelength laser.