CN106785905A - A kind of electrooptic modulator based on Prague phase-shifted grating - Google Patents
A kind of electrooptic modulator based on Prague phase-shifted grating Download PDFInfo
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- CN106785905A CN106785905A CN201710043766.1A CN201710043766A CN106785905A CN 106785905 A CN106785905 A CN 106785905A CN 201710043766 A CN201710043766 A CN 201710043766A CN 106785905 A CN106785905 A CN 106785905A
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- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 230000010363 phase shift Effects 0.000 claims abstract description 20
- 238000010276 construction Methods 0.000 claims abstract description 4
- 230000000737 periodic effect Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 230000009514 concussion Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Abstract
The invention discloses a kind of electrooptic modulator based on Prague phase-shifted grating, it is characterized in that, including basalis, lower waveguide layer and upper ducting layer, the lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, the Bragg grating in cycle such as it is provided with the top of the upper ducting layer, the centre position of Bragg grating is provided with phase-shift structure, Bragg grating is divided into 2 optical grating constructions of size identical by phase-shift structure, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width dimensions of upper ducting layer, the upper surface of basalis is additionally provided with electrode.This electrooptical modulator structure size is small, loss is low, modulation efficiency is high, also has process is simple in addition, easy of integration the characteristics of CMOS integrated circuits.
Description
Technical field
The present invention relates to integrated optics technique field, more particularly to a kind of Electro-optical Modulation based on Prague phase-shifted grating
Device.
Background technology
Society now gradually steps into the big data epoch, and the limitation of electrical interconnection technology has embodied more and more brighter
Aobvious, light network technology substitution electrical interconnection technology is an inexorable trend of communications industry development.Electrooptic modulator is good with its
Characteristic, plays vital effect in light network field.
Electrooptic modulator refers to that, when certain voltage-drop loading is on device when, can cause electro-optic crystal characteristic variations in device
And the optics being made.In the configuration aspects of electrooptic modulator, the electrooptic modulator master for the most generally studying now and applying
To be two classes：M-Z modulators and micro-loop modulator.M-Z modulators are to be divided into incident light using Y types fiber waveguide to split into two beams
After collimated light beam, one section of fiber waveguide two ends on-load voltage wherein, so as to cause the light wave by the path that phase occurs, shake
The change of width, intensity and polarization state, then two beam collimated light beams are converged through Y types fiber waveguide, realize to optical signal
Modulation.Although M-Z modulators have very simple manufacturing process and possess larger optical bandwidth, Insertion Loss is big, work(
The shortcomings of consumption is high, miniaturized structure is difficult makes it be difficult to turn into outstanding electrooptic modulator.It is micro- for M-Z modulators
Ring modulator has the advantages that size is small, low in energy consumption, can be increasingly becoming focus of concern with CMOS compatible device.But
To develop a kind of micro-loop modulator efficiently, stable, the requirement to flow-route and temperature is extremely harsh, so as to cause to be manufactured into
This increase, it is difficult to Commercial cultivation on a large scale.
With the development of the communication technology, Prague phase-shifted grating has as the modulator that can equally transmit optical signal
Very outstanding transmission characteristic and the high availability of frequency spectrum.And photoelectricity organic polymer have relative to inorganic material it is non-linear
The advantages of coefficient is high, dielectric constant is low, easy processing is processed, is compatible with existing integrated technique.
The content of the invention
The purpose of the present invention is directed to the deficiencies in the prior art, and provides a kind of electric light based on Prague phase-shifted grating and adjust
Device processed.This electrooptical modulator structure size is small, loss is low, modulation efficiency is high, also has process is simple in addition, easy of integration
The characteristics of CMOS integrated circuits.
Realizing the technical scheme of the object of the invention is：
A kind of electrooptic modulator based on Prague phase-shifted grating, including basalis, lower waveguide layer and upper ducting layer, it is described
Lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, the cloth in cycle such as are provided with the top of the upper ducting layer
Glug grating, the centre position of Bragg grating is provided with phase-shift structure, and Bragg grating is divided into size identical 2 by phase-shift structure
Individual optical grating construction, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width dimensions of upper ducting layer, base
The upper surface of bottom is additionally provided with electrode.
The basalis is argent.
The lower waveguide layer is the opto-electrical polymers of low-refraction.
The upper ducting layer is the silicon of high index of refraction.
The periodic unit of the Bragg grating is concavo-convex symmetrical rectangular structure, and periodic unit groove sections
It is identical with bossing width, Bragg grating is formed according to Bragg condition using the photoetching technique of electron beam exposure, specifically
Formula is as follows：
Wherein, what Λ was represented is periodic unit length, λcWhat is represented is centre wavelength, neff1And neff2What is represented respectively is
Grating groove part and the grating refractive index of bossing position.
The electrode is two metal electrodes, and two metal electrodes are respectively arranged at the lower waveguide layer on basalis upper surface
With the both sides of the assembly of upper ducting layer, two operating voltages of metal electrode difference according to the actual requirements and change, generally
It is ± 4.5V- ± 7.5V.
The width of the lower waveguide layer and upper ducting layer is 200nm, can be by whole with the light wave for ensureing single TM patterns
Individual structure, light wave is coupled by two one end entering apparatus of ducting layer by the concussion of energy, and optical signal transmissive is by two waveguides
The other end output of layer, reflected light signal holds output together from the input of light.
The phase-shift structure draws specific length according to equation below：
Λp=λc/(neff2)
Wherein, ΛpWhat is represented is phase-shift structure length, λcWhat is represented is centre wavelength, neff2What is represented is grating lug boss
Divide the grating refractive index of position, the design of phase-shift structure is narrower in order to have in the specific wavelength needed for transmission spectrum
Bandwidth, it is ensured that the high availability of frequency spectrum and stabilization, efficiently optical signal transmission.
Incident light can be limited in the argent of the basalis interface of basalis and lower waveguide layer, produce surface
Phasmon, using the high refractive index contrast formed between opto-electrical polymers, two kinds of materials of silicon, can be such that energy is pressed substantially
Contracting breaks through diffraction limit in lower waveguide layer, one only tens nanometers of light field restricted area is formed, so, using surface
Prague phase-shifted grating electrooptic modulator of phasmon technology provide not only efficiency of transmission higher, and greatly reduce
The size of whole device.
According to diffraction region area formula, specific formula is as follows：
Aeff=[∫ ∫ W (r) dA]/{ max (W (r)) }
Wherein, AeffWhat is represented is diffraction region area, and what W (r) was represented is electromagnetic energy density, and it is relative that ε (r) is represented
Dielectric constant, μ0What is represented is space permeability, and what E (r) and H (r) was represented is the electric field and magnetic field intensity of waveguide optical grating.
When the electrode is not powered on, light wave can be produced continuous into after device and transmitting during to the phase-shift structure
Constantly concussion coupling, optical signal under final specific wavelength can pass through whole device, and optical signal to exporting read be
“1”；When the electrode loads certain voltage, the refractive index of the opto-electrical polymers in lower waveguide layer can change, so that
The effective refractive index of whole grating changes, originally at a particular wavelength can by the optical signal of whole device will no longer by
Transmission is allowed, the optical signal to not exporting is read as " 0 ".By the change to voltage, the modulator forms a kind of phase shift of switch
The modulation system of keying (OOK), can be applied in the communication system of message capacity high.
This electrooptic modulator is combined by by photoelectricity organic polymer with Prague phase-shifted grating, it is possible to achieve to light
Signal is fast, stably, efficiently modulated, and the development to promoting electrooptic modulator is significant.
This electrooptical modulator structure size is small, loss is low, modulation efficiency is high, also has process is simple in addition, easily
The characteristics of being integrated in CMOS integrated circuits.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment；
Fig. 2 is the side view of example structure；
Wavelength is the transmission light spectrogram of 1550nm centered on Fig. 3.
In figure, the 1. electrode I. of 4. Bragg grating of ducting layer, 5. phase-shift structure 6. on the lower waveguide layer 3. of basalis 2.
Lightwave entry end O1Transmitted light wave output end O2Reflecting light output end.
Specific embodiment
Present invention is described in further detail with reference to the accompanying drawings and examples, but is not to limit of the invention
It is fixed.
Embodiment：
Reference picture 1, Fig. 2, a kind of electrooptic modulator based on Prague phase-shifted grating, including basalis 1, lower waveguide layer 2
With upper ducting layer 3, the lower waveguide layer 2 and the order of upper ducting layer 3 are spliced on the upper surface of basalis 1, the upper ducting layer 3
Top the Bragg grating 4 in cycle such as be provided with, the centre position of Bragg grating 4 is provided with phase-shift structure 5, and phase-shift structure 5 will
Bragg grating 4 is divided into 2 optical grating constructions of size identical, and the width dimensions of the basalis 1 are greater than the width of lower waveguide layer 2
Degree size, the width dimensions of upper ducting layer 3, the upper surface of basalis 1 is additionally provided with electrode 6.
The basalis 1 is argent, is the argent of refractive index 0.1453+11.3587i in this example, and width is
2000nm。
The lower waveguide layer 2 is the opto-electrical polymers of low-refraction, and lower waveguide layer 2 is that thickness is the electric light of 30nm in this example
Crystalline material is constituted, and under without on-load voltage, its refractive index is 1.65, and under 5V on-load voltages, its refractive index is 1.62.
The upper ducting layer 3 is the silicon of high index of refraction, and this example is that thickness is the dielectric silicon composition of 250nm, and refractive index is
3.455。
The periodic unit of the Bragg grating 4 is concavo-convex symmetrical rectangular structure, and periodic unit concave groove portion
Divide identical with bossing width, Bragg grating 4 is formed according to Bragg condition, tool using the photoetching technique of electron beam exposure
Body formula is as follows：
Wherein, what Λ was represented is periodic unit length, λcWhat is represented is centre wavelength, neff1And neff2What is represented respectively is
Grating groove part and the grating refractive index of bossing position.
The electrode 6 is two metal electrodes, and two metal electrodes are respectively arranged at the lower waveguide on the upper surface of basalis 1
The both sides of the assembly of layer 2 and upper ducting layer 3, two operating voltages of metal electrode difference according to the actual requirements and change,
Usually ± 4.5V- ± 7.5V.
The width of the lower waveguide layer 2 and upper ducting layer 3 is 200nm, can be passed through with the light wave for ensureing single TM patterns
Total, in this example, light wave injects device from lightwave entry end I, is coupled by the concussion of energy, and transmitted light wave is by transmitted light
Wave output terminal O1Output, reflecting light is by reflecting light output end O2Output.
The phase-shift structure 5 draws specific length according to equation below：
Λp=λc/(neff2)
Wherein, ΛpWhat is represented is phase-shift structure length, λcWhat is represented is centre wavelength, neff2What is represented is grating lug boss
Divide the grating refractive index of position, the design of phase-shift structure is narrower in order to have in the specific wavelength needed for transmission spectrum
Bandwidth, it is ensured that the high availability of frequency spectrum and stabilization, efficiently optical signal transmission.
Phase-matching condition and phase-shift structure length formula in this example according to Bragg grating, can obtain the week of grating
Phase element length is 402.4nm, and the length of phase-shift structure is 194.4nm, using 40 periodic units as the cycle of the embodiment
Unit number, the total length of Bragg grating is 16.5 μm, and the depth of groove part is set to 40nm.
Incident light can be limited in the argent of the basalis 1 interface of basalis 1 and lower waveguide layer 2, be produced
Surface phasmon, using the high refractive index contrast formed between two kinds of materials of opto-electrical polymers and silicon, can make energy base
Originally it is compressed in lower waveguide layer 2, breaks through diffraction limit, forms one only tens nanometers of light field restricted area, so, profit
Efficiency of transmission higher is provide not only with Prague phase-shifted grating electrooptic modulator of surface phasmon technology, and significantly
Reduce the size of whole device.
According to diffraction region area formula, specific formula is as follows：
Aeff=[∫ ∫ W (r) dA]/{ max (W (r)) }
Wherein, AeffWhat is represented is diffraction region area, and what W (r) was represented is electromagnetic energy density, and it is relative that ε (r) is represented
Dielectric constant, μ0What is represented is space permeability, and what E (r) and H (r) was represented is the electric field and magnetic field intensity of waveguide optical grating.
As shown in figure 3, when operating voltage does not load on 6 two ends of electrode, optical signal transfer rate at a wavelength of 1550 run
60% can be reached, illustrates that this optical signal can be by whole device, and by O1End output, reads to be " 1 "；When a work of 5V
Make voltage-drop loading when 6 two ends of electrode, optical signal transfer rate at a wavelength of 1550 run only has 18%, illustrates this optical signal not
Whole device is allowed through, reads to be " 0 "；By periodically controlling operating voltage, a kind of switch phase-shift keying (PSK) is formed
(OOK) modulation system；Additionally, from Fig. 3 it can be found that in the wave band of 1550nm, the transmission spectrum has the half-wave of 8nm
Overall height is (FWHM) wide.
Above-mentioned preferred specific embodiment, illustrates that this electrooptic modulator based on Prague phase-shifted grating can to optical signal
With realize fast, stably, efficiently modulate, and size it is small, be lost low, process is simple, be easily integrated, be adapted to large-scale production
And be applied in highdensity CMOS integrated techniques.
Claims (7)
1. a kind of electrooptic modulator based on Prague phase-shifted grating, it is characterized in that, including basalis, lower waveguide layer and upper waveguide
Layer, the lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, are provided with the top of the upper ducting layer
The Bragg grating in cycle, the centre position of Bragg grating is provided with phase-shift structure, and be divided into Bragg grating greatly by phase-shift structure
Small identical optical grating construction, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width of upper ducting layer
Degree size, the upper surface of basalis is additionally provided with electrode.
2. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, the basalis is
Argent.
3. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, the lower waveguide layer
It is the opto-electrical polymers of low-refraction.
4. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, the upper ducting layer
It is the silicon of high index of refraction.
5. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, Prague light
The periodic unit of grid is concavo-convex symmetrical rectangular structure, and periodic unit groove sections are identical with bossing width.
6. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, the electrode is two
Individual metal electrode, two metal electrodes are respectively arranged at the assembly of lower waveguide layer and upper ducting layer on the upper surface of basalis 1
Both sides.
7. the electrooptic modulator based on Prague phase-shifted grating according to claim 1, it is characterized in that, the lower waveguide layer
Width with upper ducting layer is 200nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110058433A (en) * | 2018-01-19 | 2019-07-26 | 罗伯特·博世有限公司 | Temperature feedback for electric light phase shifter |
| CN113820773A (en) * | 2021-09-28 | 2021-12-21 | 北京理工大学重庆创新中心 | Polarization tunable second-order grating diffraction system based on standing wave field regulation |
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| CN113820773A (en) * | 2021-09-28 | 2021-12-21 | 北京理工大学重庆创新中心 | Polarization tunable second-order grating diffraction system based on standing wave field regulation |
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Application publication date: 20170531 |