CN206575013U - A kind of electrooptic modulator based on Prague phase-shifted grating - Google Patents
A kind of electrooptic modulator based on Prague phase-shifted grating Download PDFInfo
- Publication number
- CN206575013U CN206575013U CN201720073868.3U CN201720073868U CN206575013U CN 206575013 U CN206575013 U CN 206575013U CN 201720073868 U CN201720073868 U CN 201720073868U CN 206575013 U CN206575013 U CN 206575013U
- Authority
- CN
- China
- Prior art keywords
- phase
- grating
- basalis
- electrooptic modulator
- lower waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses a kind of electrooptic modulator based on Prague phase-shifted grating, it is characterized in that, including basalis, lower waveguide layer and upper ducting layer, the lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, the top of the upper ducting layer is provided with the Bragg grating in the cycle of grade, the centre position of Bragg grating is provided with phase-shift structure, Bragg grating is divided into 2 optical grating constructions of size identical by phase-shift structure, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width dimensions of upper ducting layer, the upper surface of basalis is additionally provided with electrode.This electrooptical modulator structure size is small, transmission loss is low, modulation efficiency is high, also has technique simple in addition, easy of integration the characteristics of CMOS integrated circuits.
Description
Technical field
The utility model is related to integrated optics technique field, more particularly to a kind of electric light based on Prague phase-shifted grating
Modulator.
Background technology
Society now gradually steps into the big data epoch, and the limitation of electrical interconnection technology has embodied more and more brighter
Aobvious, light network technology substitution electrical interconnection technology is an inexorable trend of communications industry development.Electrooptic modulator is with it good
Characteristic, plays vital effect in light network field.
Electrooptic modulator refers to that, when certain voltage-drop loading is when on device, electro-optic crystal characteristic variations in device can be caused
And the optics being made.In the configuration aspects of electrooptic modulator, the electrooptic modulator master for the most generally studying and applying now
To be two classes：M-Z modulators and micro-loop modulator.M-Z modulators are to be divided into incident light using Y types fiber waveguide to split into two beams
After collimated light beam, one section of fiber waveguide two ends on-load voltage wherein, so as to cause to occur phase by the light wave in the path, shake
The change of width, intensity and polarization state, then two beam collimated light beams are converged through Y types fiber waveguide, realize to optical signal
Modulation.Although M-Z modulators have very simple manufacturing process and possess larger optical bandwidth, Insertion Loss is big, work(
The shortcomings of consumption is high, miniaturized structure is difficult makes it be difficult to turn into outstanding electrooptic modulator.It is micro- for M-Z modulators
Ring modulator has the advantages that size is small, low in energy consumption, can be increasingly becoming focus of concern with CMOS compatible device.But
To develop a kind of micro-loop modulator efficiently, stable, the requirement to flow-route and temperature is extremely harsh, so as to cause to be manufactured into
This increase, it is difficult to Commercial cultivation on a large scale.
With the development of the communication technology, Prague phase-shifted grating has as can equally transmit the modulator of optical signal
Very outstanding transmission characteristic and the high availability of frequency spectrum.And photoelectricity organic polymer have relative to inorganic material it is non-linear
The advantages of coefficient is high, dielectric constant is low, easy processing handles, is compatible with existing integrated technique.
Utility model content
The purpose of this utility model is in view of the shortcomings of the prior art, and to provide a kind of electricity based on Prague phase-shifted grating
Optical modulator.This electrooptical modulator structure size is small, transmission loss is low, modulation efficiency is high, also has technique simple in addition, easily
The characteristics of being integrated in CMOS integrated circuits.
Realizing the technical scheme of the utility model purpose is：
A kind of electrooptic modulator based on Prague phase-shifted grating, including basalis, lower waveguide layer and upper ducting layer, it is described
Lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, cloth of the top provided with the cycle of grade of the upper ducting layer
Glug grating, the centre position of Bragg grating is provided with phase-shift structure, and Bragg grating is divided into size identical 2 by phase-shift structure
Individual optical grating construction, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width dimensions of upper ducting layer, base
The upper surface of bottom is additionally provided with electrode.
The basalis is argent.
The lower waveguide layer is the opto-electrical polymers of low-refraction.
The upper ducting layer is the silicon of high index of refraction.
The periodic unit of the Bragg grating is concavo-convex symmetrical rectangular structure, and periodic unit groove sections
It is identical with bossing width, using the photoetching technique formation Bragg grating of electron beam exposure according to Bragg condition, specifically
Formula is as follows：
Wherein, what Λ was represented is periodic unit length, λcWhat is represented is centre wavelength, neff1And neff2What is represented respectively is
Grating groove part and the grating refractive index of bossing position.
The electrode is two metal electrodes, and two metal electrodes are respectively arranged at the lower waveguide layer on basalis upper surface
With the both sides of the assembly of upper ducting layer, the operating voltages of two metal electrodes difference according to the actual requirements and change, generally
For ± 4.5V- ± 7.5V.
The width of the lower waveguide layer and upper ducting layer is 200nm, can be by whole with the light wave for ensureing single TM patterns
Individual structure, light wave is coupled, optical signal transmissive is by two waveguides by one end entering apparatus of two ducting layers by the concussion of energy
The other end output of layer, the input of reflected light signal from light is same to hold output.
The phase-shift structure draws specific length according to equation below：
Λp=λc/(neff2)
Wherein, ΛpWhat is represented is phase-shift structure length, λcWhat is represented is centre wavelength, neff2What is represented is grating lug boss
Divide the grating refractive index of position, the design of phase-shift structure is narrower in order to have in the specific wavelength needed for transmission spectrum
Bandwidth, it is ensured that the high availability of frequency spectrum and stably, efficiently optical signal transmission.
Incident light can be limited in the interface of basalis and lower waveguide layer by the argent of the basalis, produce surface
Phasmon, using the high refractive index contrast formed between opto-electrical polymers, two kinds of materials of silicon, can be such that energy is pressed substantially
Contracting breaks through diffraction limit in lower waveguide layer, forms one only tens nanometers of light field restricted area, so, utilizes surface
Prague phase-shifted grating electrooptic modulator of phasmon technology provide not only higher efficiency of transmission, and greatly reduce
The size of whole device.
According to diffraction region area formula, specific formula is as follows：
Aeff=[∫ ∫ W (r) dA]/{ max (W (r)) }
Wherein, AeffWhat is represented is diffraction region area, and what W (r) was represented is electromagnetic energy density, and it is relative that ε (r) is represented
Dielectric constant, μ0What is represented is space permeability, and what E (r) and H (r) were represented is the electric field and magnetic field intensity of waveguide optical grating.
When the electrode is not powered on, when light wave enters after device and transmitted to the phase-shift structure, it can produce continuous
Optical signal under constantly concussion coupling, final specific wavelength can pass through whole device, and be to the optical signal reading of output
“1”；When the electrode loads certain voltage, the refractive index of the opto-electrical polymers in lower waveguide layer can change, so that
The effective refractive index of whole grating changes, originally at a particular wavelength can by the optical signal of whole device will no longer by
Allow transmission, it is " 0 " that the optical signal not exported, which is read,.By the change to voltage, the modulator forms a kind of switch phase shift
The modulation system of keying (OOK), can be applied in the communication system of high message capacity.
This electrooptic modulator is by the way that photoelectricity organic polymer is combined with Prague phase-shifted grating, it is possible to achieve to light
Signal is fast, stably, efficiently modulated, and the development for promoting electrooptic modulator is significant.
This electrooptical modulator structure size is small, transmission loss is low, modulation efficiency is high, also has technique simple in addition, easily
The characteristics of being integrated in CMOS integrated circuits.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment；
Fig. 2 is the side view of example structure；
Wavelength is 1550nm transmission light spectrogram centered on Fig. 3.
In figure, the electrode I. of 4. Bragg grating of ducting layer, 5. phase-shift structure 6. on the lower waveguide layer 3. of 1. basalis 2.
Lightwave entry end O1Transmitted light wave output end O2Reflecting light output end.
Embodiment
The utility model content is described in further detail with reference to the accompanying drawings and examples, but is not to this practicality
New restriction.
Embodiment：
Reference picture 1, Fig. 2, a kind of electrooptic modulator based on Prague phase-shifted grating, including basalis 1, lower waveguide layer 2
With upper ducting layer 3, lower waveguide layer 2 and upper ducting layer 3 order is spliced on the upper surface of basalis 1, the upper ducting layer 3
Bragg grating 4 of the top provided with the cycle of grade, the centre position of Bragg grating 4 is provided with phase-shift structure 5, and phase-shift structure 5 will
Bragg grating 4 is divided into 2 optical grating constructions of size identical, and the width dimensions of the basalis 1 are greater than the width of lower waveguide layer 2
Size, the width dimensions of upper ducting layer 3 are spent, the upper surface of basalis 1 is additionally provided with electrode 6.
The basalis 1 is argent, is refractive index 0.1453+11.3587i argent in this example, and width is
2000nm。
The lower waveguide layer 2 is the opto-electrical polymers of low-refraction, and lower waveguide layer 2 is the electric light that thickness is 30nm in this example
Crystalline material is constituted, under without on-load voltage, and its refractive index is 1.65, under 5V on-load voltages, and its refractive index is 1.62.
The upper ducting layer 3 is the silicon of high index of refraction, and this example is that the dielectric silicon that thickness is 250nm is constituted, and refractive index is
3.455。
The periodic unit of the Bragg grating 4 is concavo-convex symmetrical rectangular structure, and periodic unit concave groove portion
Divide identical with bossing width, using the photoetching technique formation Bragg grating 4 of electron beam exposure according to Bragg condition, tool
Body formula is as follows：
Wherein, what Λ was represented is periodic unit length, λcWhat is represented is centre wavelength, neff1And neff2What is represented respectively is
Grating groove part and the grating refractive index of bossing position.
The electrode 6 is two metal electrodes, and two metal electrodes are respectively arranged at the lower waveguide on the upper surface of basalis 1
The both sides of the assembly of layer 2 and upper ducting layer 3, the operating voltages of two metal electrodes difference according to the actual requirements and change,
Usually ± 4.5V- ± 7.5V.
The width of the lower waveguide layer 2 and upper ducting layer 3 is 200nm, can be passed through with the light wave for ensureing single TM patterns
In total, this example, light wave injects device from lightwave entry end I, is coupled by the concussion of energy, transmitted light wave is by transmitted light
Wave output terminal O1Output, reflecting light is by reflecting light output end O2Output.
The phase-shift structure 5 draws specific length according to equation below：
Λp=λc/(neff2)
Wherein, ΛpWhat is represented is phase-shift structure length, λcWhat is represented is centre wavelength, neff2What is represented is grating lug boss
Divide the grating refractive index of position, the design of phase-shift structure is narrower in order to have in the specific wavelength needed for transmission spectrum
Bandwidth, it is ensured that the high availability of frequency spectrum and stably, efficiently optical signal transmission.
According to the phase-matching condition of Bragg grating and phase-shift structure length formula in this example, the week of grating can be obtained
Phase element length is 402.4nm, and the length of phase-shift structure is 194.4nm, and the cycle of the embodiment is used as using 40 periodic units
Unit number, the total length of Bragg grating is 16.5 μm, and the depth of groove part is set to 40nm.
Incident light can be limited in the interface of basalis 1 and lower waveguide layer 2 by the argent of the basalis 1, produce
Surface phasmon, using the high refractive index contrast formed between two kinds of materials of opto-electrical polymers and silicon, can make energy base
Originally it is compressed in lower waveguide layer 2, breaks through diffraction limit, forms one only tens nanometers of light field restricted area, so, profit
Higher efficiency of transmission is provide not only with Prague phase-shifted grating electrooptic modulator of surface phasmon technology, and significantly
Reduce the size of whole device.
According to diffraction region area formula, specific formula is as follows：
Aeff=[∫ ∫ W (r) dA]/{ max (W (r)) }
Wherein, AeffWhat is represented is diffraction region area, and what W (r) was represented is electromagnetic energy density, and it is relative that ε (r) is represented
Dielectric constant, μ0What is represented is space permeability, and what E (r) and H (r) were represented is the electric field and magnetic field intensity of waveguide optical grating.
As shown in figure 3, when operating voltage does not load on 6 two ends of electrode, the transfer rate of optical signal at a wavelength of 1550 run
60% can be reached, illustrates that this optical signal can be by whole device, and by O1End output, reads as " 1 "；When 5V work
Make voltage-drop loading when 6 two ends of electrode, the transfer rate of optical signal at a wavelength of 1550 run only has 18%, illustrates this optical signal not
Whole device is allowed through, is read as " 0 "；By periodically controlling operating voltage, a kind of switch phase-shift keying (PSK) is formed
(OOK) modulation system；In addition, from Fig. 3 it can be found that in 1550nm wave band, the transmission spectrum has 8nm half-wave
Overall height is wide (FWHM).
Above-mentioned preferred specific embodiment, illustrates that this electrooptic modulator based on Prague phase-shifted grating can to optical signal
Fast, stably, efficiently modulated with realizing, and size is small, low, technique is lost simply, is easily integrated, and is adapted to large-scale production
And applied in highdensity CMOS integrated techniques.
Claims (7)
1. a kind of electrooptic modulator based on Prague phase-shifted grating, it is characterized in that, including basalis, lower waveguide layer and upper waveguide
Layer, the lower waveguide layer and upper ducting layer order are spliced on the upper surface of basalis, the top of the upper ducting layer provided with etc.
The Bragg grating in cycle, the centre position of Bragg grating is provided with phase-shift structure, and Bragg grating is divided into greatly by phase-shift structure
Small identical optical grating construction, the width dimensions of the basalis are greater than the width dimensions of lower waveguide layer, the width of upper ducting layer
Size is spent, the upper surface of basalis is additionally provided with electrode.
2. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, the basalis is
Argent.
3. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, the lower waveguide layer
For the opto-electrical polymers of low-refraction.
4. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, the upper ducting layer
For the silicon of high index of refraction.
5. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, Prague light
The periodic unit of grid is concavo-convex symmetrical rectangular structure, and periodic unit groove sections are identical with bossing width.
6. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, the electrode is two
Individual metal electrode, two metal electrodes are respectively arranged at the assembly of the lower waveguide layer and upper ducting layer on the upper surface of basalis 1
Both sides.
7. the electrooptic modulator according to claim 1 based on Prague phase-shifted grating, it is characterized in that, the lower waveguide layer
Width with upper ducting layer is 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720073868.3U CN206575013U (en) | 2017-01-19 | 2017-01-19 | A kind of electrooptic modulator based on Prague phase-shifted grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720073868.3U CN206575013U (en) | 2017-01-19 | 2017-01-19 | A kind of electrooptic modulator based on Prague phase-shifted grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206575013U true CN206575013U (en) | 2017-10-20 |
Family
ID=60061152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720073868.3U Expired - Fee Related CN206575013U (en) | 2017-01-19 | 2017-01-19 | A kind of electrooptic modulator based on Prague phase-shifted grating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206575013U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785905A (en) * | 2017-01-19 | 2017-05-31 | 桂林电子科技大学 | A kind of electrooptic modulator based on Prague phase-shifted grating |
-
2017
- 2017-01-19 CN CN201720073868.3U patent/CN206575013U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785905A (en) * | 2017-01-19 | 2017-05-31 | 桂林电子科技大学 | A kind of electrooptic modulator based on Prague phase-shifted grating |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Nanophotonic lithium niobate electro-optic modulators | |
| Brimont et al. | High speed silicon electro-optical modulators enhanced via slow light propagation | |
| US7840099B2 (en) | Ultrafast Ge/Si resonator-based modulators for optical data communications in silicon photonics | |
| CN112262342A (en) | Optical phase modulator and optical modulator | |
| JPWO2008102511A1 (en) | Optical phase modulation element and optical modulator using the same | |
| JP2008268276A (en) | Light modulator, light source device, and driving method of light modulator | |
| Liu et al. | Low-power all-optical microwave filter with tunable central frequency and bandwidth based on cascaded opto-mechanical microring resonators | |
| Milošević et al. | Hyperuniform disordered waveguides and devices for near infrared silicon photonics | |
| Taghavi et al. | Polymer modulators in silicon photonics: review and projections | |
| Qiu et al. | Electro-optic polymer ring resonator modulators | |
| Torrijos-Morán et al. | Ultra-compact optical switches using slow light bimodal silicon waveguides | |
| Shen et al. | Silicon photonic integrated circuits and its application in data center | |
| CN102124395B (en) | Surface-plasmon-based optical modulator | |
| Qi et al. | Electrical tunable topological valley photonic crystals for on-chip optical communications in the telecom band | |
| CN106785905A (en) | A kind of electrooptic modulator based on Prague phase-shifted grating | |
| CN206575013U (en) | A kind of electrooptic modulator based on Prague phase-shifted grating | |
| Han | 1D photonic crystals: principles and applications in silicon photonics | |
| Xiao et al. | Tunable Fano resonance in mutually coupled micro-ring resonators | |
| Hu et al. | High-efficient and polarization independent edge coupler for thin-film lithium niobite waveguide devices | |
| Khandokar et al. | Performance of planar, rib, and photonic crystal silicon waveguides in tailoring group-velocity dispersion and mode loss | |
| Zhang et al. | Invited Article: Electrically tunable silicon-based on-chip microdisk resonator for integrated microwave photonic applications | |
| Chen et al. | Single-step etching polarization splitter-rotator based on lithium niobate ridge waveguide | |
| Okayama et al. | Polarisation rotation Bragg grating with high diffraction efficiency using Si waveguide top surface groove grating | |
| CN204269974U (en) | A kind of electrooptic modulator of D type tiny fiber-optics grating | |
| Abdelatty et al. | Hybrid Plasmonic electro-optical directional coupler based modulator based on electrically tuning the ITO’s properties |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171020 Termination date: 20180119 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |