CN1243286C - Method for producing polymer light wave guide device based on silicon lining - Google Patents
Method for producing polymer light wave guide device based on silicon lining Download PDFInfo
- Publication number
- CN1243286C CN1243286C CN 200410053794 CN200410053794A CN1243286C CN 1243286 C CN1243286 C CN 1243286C CN 200410053794 CN200410053794 CN 200410053794 CN 200410053794 A CN200410053794 A CN 200410053794A CN 1243286 C CN1243286 C CN 1243286C
- Authority
- CN
- China
- Prior art keywords
- sio
- layer
- corrosion
- oxygen oxidation
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 229920000642 polymer Polymers 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000010410 layer Substances 0.000 claims abstract description 64
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 44
- 230000003647 oxidation Effects 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000012792 core layer Substances 0.000 claims abstract description 5
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 230000007797 corrosion Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000005416 organic matter Substances 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000011162 core material Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 241000207961 Sesamum Species 0.000 description 1
- 235000003434 Sesamum indicum Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The present invention discloses a method for making a polymer optical waveguide device based on a silicon lining. The method comprises the following steps: 1. using an oxidation process to grow a SiO2 thin layer on the surface of the Si lining as a Si-corrosion mask; 2. using the SiO2 as the mask to corrode the Si lining; 3. growing thicker SiO2 as a lower limiting layer; 4. making a polymer core layer and grinding surplus parts; 5. making a polymer upper limiting layer. The present invention has the advantages of simple manufacturing process, low production cost and high efficiency. Only some conventional semiconductor devices and conventional processes are used, and complex and expensive devices and complex and highly difficult techniques are not needed. The method is compatible with IC process, and is favorable to realize the integration of photoelectric devices.
Description
Technical field
The present invention relates to method for making, relate in particular to a kind of method for making of the polymer optical waveguide device based on silicon substrate based on the type of the burying polymer optical waveguide device of silicon substrate.
Background technology
At present fiber waveguide device as: light source/receiver (detector), modulator/demodulator, Wavelength division multiplexer/demultiplexer, photoswitch/optical power distributor, image intensifer/attenuator, optical filter, interferometer etc. all occupy critical role in optical-fiber network.Employed material has a lot, and they realize one or more above-mentioned devices with different structure and principle.These materials mainly comprise III-V group iii v compound semiconductor material, LiNbO
3Material, SOI (silicon on isolator), Si, SiO
2, organic polymer etc.
Wherein utilize Si to have technical maturity, easy advantage such as integrated, and be easy to utilize oxidation technology on Si, to make one deck SiO as backing material
2Make the lower limit layer material.Organic polymer as the fiber waveguide device material have that structure is flexible, technology is simple, low cost and other advantages, and has characteristics such as bigger negative thermo-optical coeffecient, lower heat-conduction coefficient and absorption loss.And, utilize Si to be backing material, make the technology and the microelectronic technique compatibility of the polymer optical waveguide device of the type of burying, the cost of material is low, is with a wide range of applications.
Summary of the invention
The purpose of this invention is to provide a kind of method for making of the polymer optical waveguide device based on silicon substrate, be based on the Si backing material, with SiO
2Be lower limit layer, polymkeric substance is the waveguide device method for making technology of core material.
The technical solution adopted for the present invention to solve the technical problems is to comprise the steps:
1. based on the method for making of the polymer optical waveguide device of silicon substrate, it is characterized in that comprising the steps:
1) utilizes oxidation technology one deck SiO that on the Si substrate surface, grows
2Thin layer is as the Si corrosion mask:
For oxidation one deck SiO on the Si sheet of cleaning
2Thin layer, in the high-temperature oxydation stove, adopting oxidizing condition is 1100 ℃-1150 ℃ of temperature, oxygen gas flow rate is 800-1500ml/min, first dry-oxygen oxidation 15-30 minute; Wet-oxygen oxidation 20-40 minute then, bath temperature 80-95 ℃; Once more after dry-oxygen oxidation 15-30 minute, obtain the SiO that thickness is about 200nm at last
2Thin layer;
2) with SiO
2Thin layer is a mask corrosion Si substrate:
In order on silicon chip, to etch the waveguide region of designing requirement shape, at first must be the SiO on the etch areas
2Thin layer is removed, and this work is finished by photoetching process;
After the photoetching, in order to remove the SiO of waveguide region
2Thin layer need use etching process;
Utilize photoresist to make mask corrosion SiO
2The corrosive liquid proportioning be HF: NH
4F: H
2O=3: 6: 9, at SiO
2On obtain the figure of waveguide, remove photoresist after the corrosion;
Utilize SiO again
2Thin layer is made mask corrosion Si, and the mordant of Si has a variety of, is that the corrosive liquid proportioning is KOH: H
2O=1: 1, etching condition: bath temperature 50-70 ℃, be determined by experiment corrosion rate and be about 0.1 μ m/ minute, owing to can residually corrosive liquid be arranged after the corrosion usually, can continue corrosion to its surface, the infringement silicon face at silicon face, therefore after finishing, corrosion also to handle silicon face, principal ingredient at residual corrosive liquid is a potassium hydroxide, adopts the method for soaking in watery hydrochloric acid, rinses well with deionized water then;
More than 1), 2) two the step also can directly after photoetching on the Si substrate, make mask with photoresist, etch the waveguide region of designing requirement shape with RIE or ICP dry etching method;
3) the thicker SiO of growth
2Lower limit layer:
In order to form lower limit layer, suppress to leak into the light field in the silicon substrate of high index, so on the silicon chip of the waveguide region that etches the designing requirement shape the thicker SiO of growth one deck
2As SiO
2Lower limit layer, still adopt method that dry-oxygen oxidation and wet-oxygen oxidation the hocket silicon dioxide layer of growing, oxidizing temperature remains on 1100-1200 ℃, elder generation's dry-oxygen oxidation 20-40 minute, wet-oxygen oxidation and dry-oxygen oxidation hocket 6 times then, wherein wet-oxygen oxidation 50-70 minute, dry-oxygen oxidation 20-40 minute.Be 50-70 minute dry-oxygen oxidation at last;
4) make core polymer layer, and grind redundance:
On sol evenning machine, adopt to revolve and get rid of technology and obtain the polymer waveguide part;
At first, will handle the good silicon dioxide laminar surface of growing, purpose is the adhesive capacity that increases between silicon dioxide laminar surface and the organic matter layer, prevents that organism from producing shrinkage phenomenon when film forming, and method is: earlier at dense H
2SO
4Soaked 4～6 hours, rinse well with deionized water, in isopropyl alcohol, soaked again 6～8 hours, rinse well with deionized water, the defective of polymer film was few when rotating speed was high when sparing glue, but film can be thinner, when rotating speed hangs down (＜2000rpm) the polymkeric substance membrane thickness unevenness is comparatively obvious, so will carry out balance;
This moment, core layer polymer was not only filled with SiO
2Waveguide groove district for lower limit layer also can form the skim plate part, constitutes the structure of ridged, in order to obtain the structure of the type of burying, needs unnecessary plate part is ground away, and the parameter during grinding is determined according to the concrete condition of plate part;
5) make the polymkeric substance upper limiting layer:
In order on core layer polymer, to generate upper limiting layer, need once more the even low slightly polymeric material of glue one deck refractive index, no matter be sandwich layer or covering polymkeric substance, all need after even being coated with to remove solvent in about 1～2 hour with 40-60 ℃ of heat preservation and dryness in a vacuum, take out then and in baking oven, slowly be warmed up to 90-120 ℃, be incubated 2 hours, slowly be warming up to 150-160 ℃ again, be incubated 1-1.5 hour.
The useful effect that the present invention has is: manufacture craft of the present invention is simple, only uses some conventional semiconductor equipment and common process, does not need cost and complex equipment and complicated high-leveled and difficult technology, and production cost is low, efficient is high.This method and IC process compatible help realizing the integrated of photoelectric device.
Description of drawings
Accompanying drawing is a manufacture craft process flow diagram of the present invention.
In the accompanying drawing: the 1st, Si substrate, 2 SiO
2Thin layer, the 3rd, SiO
2Lower limit layer, the 4th, core polymer layer, the 5th, polymkeric substance upper limiting layer.
Embodiment
As shown in Figure 1, be substrate, SiO in order to make one with Si
2Bury 1 * 2 power splitter of type for the polymkeric substance of lower limit layer, waveguide dimensions is 5 μ m * 5 μ m, and top covering thickness is 10 μ m, and it is as follows to make worker sesame step:
1) utilizes oxidation technology one deck SiO that on Si substrate 1 surface, grows
2 Thin layer 2 is as Si substrate 1 corrosion mask:
For the SiO that approaches at the Si substrate 1 oxidation one deck that cleans
2 Thin layer 2, in the high-temperature oxydation stove, adopting oxidizing condition is 1150 ℃ of temperature, oxygen gas flow rate is 1100ml/min, dry-oxygen oxidation 20 minutes, wet-oxygen oxidation 30 minutes (90 ℃ of bath temperatures), dry-oxygen oxidation obtained the thin SiO that thickness is about 200nm after 20 minutes once more
2Layer;
2) with SiO
2 Thin layer 2 is a mask corrosion Si substrate 1:
In order on silicon chip, to etch the waveguide region of Y branch shape, at first must be the SiO on the etch areas
2 Thin layer 2 is removed, and this work is finished by photoetching process;
After the photoetching, in order to remove the SiO of waveguide region
2 Thin layer 2 needs to use etching process;
Utilize photoresist to make mask corrosion SiO
2The corrosive liquid proportioning be HF: NH
4F: H
2O=3: 6: 9, at SiO
2Obtain the figure of waveguide on the thin layer 2, remove photoresist after the corrosion;
Utilize SiO again
2 Thin layer 2 is made mask corrosion Si substrate 1, and the mordant of Si has a variety of, is that the corrosive liquid proportioning is KOH: H
2O=1: 1, etching condition: 60 ℃ of bath temperatures, be determined by experiment corrosion rate and be about 0.1 μ m/ minute, owing to can residually corrosive liquid be arranged after the corrosion usually, can continue corrosion to its surface, the infringement silicon face at silicon face, therefore after finishing, corrosion also to handle silicon substrate 1 surface, principal ingredient at residual corrosive liquid is a potassium hydroxide, adopts the method for soaking in watery hydrochloric acid, rinses well with deionized water then;
3) the thicker SiO of growth
2Lower limit layer 3:
In order to form lower limit layer, suppress to leak into the light field in the silicon substrate of high index, so on the silicon substrate 1 of the waveguide region that etches Y branch the thicker SiO of growth one deck
2 Lower limit layer 3, still adopt method that dry-oxygen oxidation and wet-oxygen oxidation the hocket silicon dioxide layer of growing, oxidizing temperature remains on 1150 ℃, first dry-oxygen oxidation 30 minutes, wet-oxygen oxidation and dry-oxygen oxidation hocket 6 times then, wherein wet-oxygen oxidation 60 minutes, dry-oxygen oxidation 30 minutes.Be 60 minutes dry-oxygen oxidation at last;
4) make core polymer layer 4, and grind redundance:
On sol evenning machine, adopt to revolve and get rid of technology and obtain the polymer waveguide part;
At first, to the good SiO that grows
2 Lower limit layer 3 surfaces will be handled, and purpose is to increase SiO
2Adhesive capacity between lower limit layer 3 surfaces and the organic polymer layers prevents that organism from producing shrinkage phenomenon when film forming, and method is: earlier at dense H
2SO
4Soaked 4～6 hours, and rinsed well, in isopropyl alcohol, soaked again 6～8 hours, rinse well with deionized water with deionized water.Employing is revolved and is got rid of technology and obtain the polymer waveguide part, according to the difference of character such as polymkeric substance viscosity, selects even glue rotating speed.Generally remain on more than the 2000rpm.And use grinding technics to remove unnecessary core structure, obtain the sandwich layer of the 5 μ m degree of depth.
5) make polymkeric substance upper limiting layer 5:
Get rid of technology and obtain polymkeric substance upper limiting layer 5 with revolving at last, select even glue rotating speed, control polymkeric substance upper limiting layer 5 thickness are at 10 μ m.
Claims (1)
1. based on the method for making of the polymer optical waveguide device of silicon substrate, it is characterized in that comprising the steps:
1) utilizes oxidation technology one deck SiO that on Si substrate (1) surface, grows
2Thin layer (2) is as the Si corrosion mask:
For oxidation one deck SiO on the Si sheet of cleaning
2Thin layer (2), in the high-temperature oxydation stove, adopting oxidizing condition is 1100 ℃-1150 ℃ of temperature, oxygen gas flow rate is 800-1500ml/min, first dry-oxygen oxidation 15-30 minute; Wet-oxygen oxidation 20-40 minute then, bath temperature 80-95 ℃; Once more after dry-oxygen oxidation 15-30 minute, obtain the SiO that thickness is about 200nm at last
2Thin layer (2);
2) with SiO
2Thin layer (2) is a mask corrosion Si substrate (1):
In order on silicon chip, to etch the waveguide region of designing requirement shape, at first must be the SiO on the etch areas
2Thin layer (2) is removed, and this work is finished by photoetching process;
After the photoetching, in order to remove the SiO of waveguide region
2Thin layer (2) needs to use etching process;
Utilize photoresist to make mask corrosion SiO
2The corrosive liquid proportioning be HF: NH
4F: H
2O=3: 6: 9, at SiO
2On obtain the figure of waveguide, remove photoresist after the corrosion;
Utilize SiO again
2Thin layer (2) is made mask corrosion Si, and the corrosive liquid proportioning is KOH: H
2O=1: 1, etching condition: bath temperature 50-70 ℃, be determined by experiment corrosion rate and be about 0.1um/ minute, owing to can residually corrosive liquid be arranged after the corrosion usually, can continue corrosion to its surface, the infringement silicon face at silicon face, therefore after finishing, corrosion also to handle silicon face, principal ingredient at residual corrosive liquid is a potassium hydroxide, adopts the method for soaking in watery hydrochloric acid, rinses well with deionized water then;
3) the thicker SiO of growth
2Lower limit layer (3):
In order to form lower limit layer, suppress to leak into the light field in the silicon substrate of high index, so on the silicon chip of the waveguide region that etches the designing requirement shape the thicker SiO of growth one deck
2As SiO
2Lower limit layer (3), still adopt method that dry-oxygen oxidation and wet-oxygen oxidation the hocket silicon dioxide layer of growing, oxidizing temperature remains on 1100-1200 ℃, elder generation's dry-oxygen oxidation 20-40 minute, wet-oxygen oxidation and dry-oxygen oxidation hocket 6 times then, wherein wet-oxygen oxidation 50-70 minute, dry-oxygen oxidation 20-40 minute.Be 50-70 minute dry-oxygen oxidation at last;
4) make core polymer layer (4), and grind redundance:
On sol evenning machine, adopt to revolve and get rid of technology and obtain the polymer waveguide part;
At first, will handle the good silicon dioxide laminar surface of growing, purpose is the adhesive capacity that increases between silicon dioxide laminar surface and the organic matter layer, prevents that organism from producing shrinkage phenomenon when film forming, and method is: earlier at dense H
2SO
4Soaked 4～6 hours, and rinsed well, in isopropyl alcohol, soaked again 6～8 hours with deionized water, rinse well with deionized water, the defective of polymer film was few when rotating speed was high when sparing glue, but film can be thinner, rotating speed during less than 2000rpm the polymkeric substance membrane thickness unevenness comparatively obvious, so will carry out balance;
This moment, core layer polymer was not only filled with SiO
2Waveguide groove district for lower limit layer also can form the skim plate part, constitutes the structure of ridged, in order to obtain the structure of the type of burying, needs unnecessary plate part is ground away, and the parameter during grinding is determined according to the concrete condition of plate part;
5) make polymkeric substance upper limiting layer (5):
In order on core layer polymer, to generate upper limiting layer (5), need once more the even low slightly polymeric material of glue one deck refractive index, no matter be sandwich layer or covering polymkeric substance, all need after even being coated with in a vacuum with the 40-60 ℃ of about 1-2 of heat preservation and dryness hour removal solvent, take out then and in baking oven, slowly be warmed up to 90-120 ℃, be incubated 2 hours, slowly be warming up to 150-160 ℃ again, be incubated 1-1.5 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410053794 CN1243286C (en) | 2004-08-14 | 2004-08-14 | Method for producing polymer light wave guide device based on silicon lining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410053794 CN1243286C (en) | 2004-08-14 | 2004-08-14 | Method for producing polymer light wave guide device based on silicon lining |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588233A CN1588233A (en) | 2005-03-02 |
| CN1243286C true CN1243286C (en) | 2006-02-22 |
Family
ID=34602979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410053794 Expired - Fee Related CN1243286C (en) | 2004-08-14 | 2004-08-14 | Method for producing polymer light wave guide device based on silicon lining |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1243286C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434952C (en) * | 2006-04-13 | 2008-11-19 | 中国科学院半导体研究所 | Self-aligning doping process suitable for step structure |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101523264A (en) * | 2006-08-10 | 2009-09-02 | 松下电工株式会社 | Photoelectric converter |
| JP4882644B2 (en) | 2006-08-10 | 2012-02-22 | パナソニック電工株式会社 | Photoelectric conversion device |
| CN101325171B (en) * | 2007-06-13 | 2010-07-28 | 中国科学院半导体研究所 | Method for making nanometer dimension triangle air pocket |
| CN101498813B (en) * | 2007-09-25 | 2011-01-05 | 苏州晶方半导体科技股份有限公司 | Light waveguide |
| CN101423188B (en) * | 2007-10-31 | 2011-06-29 | 中国科学院半导体研究所 | Production method of nano size air groove |
| CN102540336A (en) * | 2010-12-24 | 2012-07-04 | 苏州东微半导体有限公司 | Manufacture method for planar lightwave circuit (PLC) light device |
| CN102540335A (en) * | 2010-12-24 | 2012-07-04 | 苏州东微半导体有限公司 | Manufacture method for planar lightwave circuit (PLC) optical device |
| CN102096149B (en) * | 2011-01-19 | 2012-08-15 | 浙江大学 | Silicon-based long-wave infrared waveguide and preparation method thereof |
| CN102116900B (en) * | 2011-03-31 | 2013-04-10 | 复旦大学 | Method for manufacturing PLC (Programmable Logic Controller) device |
| CN103197377B (en) * | 2013-04-16 | 2014-11-26 | 浙江大学 | Method for preparing ridge-shaped polymer optical waveguide |
| WO2015081538A1 (en) * | 2013-12-05 | 2015-06-11 | 华为技术有限公司 | Optical modulator and planar photonic device module |
| US9664852B1 (en) * | 2016-09-30 | 2017-05-30 | Nanya Technology Corporation | Optical waveguide having several dielectric layers and at least one metal cladding layer |
| CN107807419A (en) * | 2017-12-11 | 2018-03-16 | 中山大学 | Radius of curvature is the preparation method and bent lightguide of the bent lightguide of wavelength magnitude |
| CN108303766A (en) * | 2018-01-12 | 2018-07-20 | 浙江富春江光电科技有限公司 | A kind of planar optical waveguide wafer production technology method |
| CN108387972B (en) * | 2018-03-21 | 2020-07-03 | 武汉永鼎光电子技术有限公司 | Waveguide, demultiplexer and manufacturing method of waveguide |
| CN109521512B (en) * | 2018-10-25 | 2023-05-16 | 浙江清华柔性电子技术研究院 | Flexible optical waveguide and method of making same |
| CN110441860B (en) * | 2019-08-14 | 2020-09-25 | 中国科学院微电子研究所 | Grooving preparation method for thick film silicon nitride waveguide |
| CN111077607B (en) * | 2019-12-30 | 2022-01-11 | 中国科学院微电子研究所 | Method for manufacturing silicon-based optical waveguide device |
| CN111239900B (en) * | 2020-03-18 | 2022-03-29 | 联合微电子中心有限责任公司 | Forming SiO based on wafer bonding2Method for realizing spot-size conversion by waveguide and spot-size converter |
| CN117289391B (en) * | 2023-11-22 | 2024-01-30 | 扬州群发光芯科技有限公司 | All-polymer waveguide device, production process and production device |
-
2004
- 2004-08-14 CN CN 200410053794 patent/CN1243286C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434952C (en) * | 2006-04-13 | 2008-11-19 | 中国科学院半导体研究所 | Self-aligning doping process suitable for step structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1588233A (en) | 2005-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1243286C (en) | Method for producing polymer light wave guide device based on silicon lining | |
| CN1729415A (en) | Process for fabrication of optical waveguides | |
| US7305161B2 (en) | Encapsulated photonic crystal structures | |
| CN104950478A (en) | Active compound optical waveguide based on organic polymer material and manufacturing method thereof | |
| EP1225458B1 (en) | Method for the manufacturing of a multilayer guided-wave device on a substrate, and guided-wave device obtained therewith | |
| US6856745B2 (en) | Waveguide and applications therefor | |
| CA2323683C (en) | A process for fabricating an optical device in a silicon substrate | |
| US8711484B2 (en) | Fabrication of thin pellicle beam splitters | |
| CN111933729B (en) | Method for manufacturing low dark current silicon-based germanium detector | |
| CN107275439B (en) | A kind of manufacturing method of " I " type structure PDMS matrixes based on reverse | |
| CN1746707A (en) | Production of ionic exchange glass light waveguide device | |
| CN111123616A (en) | Sulfide-silicon nitride based hybrid waveguide and preparation method thereof | |
| CN115951454A (en) | Lithium niobate-silicon nitride waveguide and laser heterogeneous integrated structure and preparation method thereof | |
| CN114995010A (en) | Silicon-based three-dimensional waveguide mode optical switch based on phase change material | |
| CN114823350A (en) | Lithium niobate thin film etching method | |
| CN113031151A (en) | Chalcogenide slit optical waveguide structure and preparation method thereof | |
| CN109521512B (en) | Flexible optical waveguide and method of making same | |
| CN107221578A (en) | A kind of manufacture method of " I " type structure PDMS matrixes | |
| CN1727928A (en) | Silicon optical waveguide on polymer | |
| US6391515B1 (en) | Manufacturing process for preparing sol-gel optical waveguides | |
| CN113437162A (en) | Preparation method of substrate structure of hybrid integrated photoelectric chip and substrate structure | |
| CN105585252A (en) | Antireflection film, preparing method thereof and glass substrate | |
| CN114164002B (en) | Chemical etching solution and etching method for zinc blende structure compound semiconductor | |
| JPH09325201A (en) | High molecular optical material, optical waveguide using the material and its production | |
| CN115016063B (en) | Step-by-step etching sub-nanometer precision waveguide process for double-layer adhesive mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |