CN101523264A - Photoelectric converter - Google Patents
Photoelectric converter Download PDFInfo
- Publication number
- CN101523264A CN101523264A CNA2007800376499A CN200780037649A CN101523264A CN 101523264 A CN101523264 A CN 101523264A CN A2007800376499 A CNA2007800376499 A CN A2007800376499A CN 200780037649 A CN200780037649 A CN 200780037649A CN 101523264 A CN101523264 A CN 101523264A
- Authority
- CN
- China
- Prior art keywords
- base substrate
- substrate
- photo
- conversion device
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a photoelectric converter capable of reducing the height of the device. The photoelectric converter 1A includes: a light emitting element 4A or a light receiving element 4B; an IC circuit 50A or 50B for transmitting/receiving an electric signal to/from the light emitting element 4A or the light receiving element 4B; a mount substrate 3 adapted to be mounted on one surface 3afrom the side on which the light emitting element 4A emits light, or the side on which the light receiving element 4B receives light; an electric connector 6 adapted to be provided on the one surface 3a or the other surface 3c of the mount substrate 3, and to be attached and detached to and from an external connector 7; and a waveguide adapted to be provided on the mount substrate 3 along the one surface 3a or the other surface 3c of the mount substrate 3, and to be optically coupled to the light emitting element 4A or the light receiving element 4B.
Description
Technical field
The present invention relates to a kind of photo-electric conversion device with optical module.
Background technology
Traditionally, as photo-electric conversion device, as the explanation in Fig. 9 of patent document 1, known have one type, comprising: luminescence component, and it launches light by electric signal being transformed into the light signal; Substrate is formed for that thereon electric signal is sent to the IC circuit of luminescence component and luminescence component and is installed on the surface from the opposition side of the emission side of luminescence component; And waveguide, it is arranged to extend and transmit light by the luminescence component emission from luminescence component on perpendicular to the direction on a surface of substrate.Note replacing luminescence component, also can use optical fiber receive module, its reception light and the light signal that will receive are transformed to electric signal.
In the photo-electric conversion device of Fig. 9 of patent document 1 explanation, public electric connector, it can be filled to the electric connector that is set at the mother on the wiring substrate (wiring substrate) and can separate from this female electric connector, this public electric connector is set on another surface of substrate, and substrate and wiring substrate are electrically connected each other by connecting these electric connectors.
But, in above-mentioned structure, waveguide is provided so that on perpendicular to the direction on a surface of substrate extends from luminescence component, and it makes that whole height of devices is increased significantly.
At this, as described in Fig. 3 of patent document 1, can understand by on the side of substrate, electric connector being set, the light emission direction of luminescence component is suitable for being aligned to parallel with the wiring substrate.But, even in this way, the device of the size of luminescence component and control IC assembly highly is necessary at least, so its restraining device height significantly.
Patent document 1: the early stage publication of Japan 2001-42170 number
Summary of the invention
Because the above-mentioned fact the object of the present invention is to provide a kind of photo-electric conversion device, it can reduce the device height.
In order to address the above problem, according to the present invention, provide a kind of photo-electric conversion device, it is characterized in that comprising: base substrate (mount substrate); The IC circuit is suitable for being set on the base substrate; Optical module is suitable for having the electric signal by the output of IC circuit is transformed to light signal and radiative function, or the light signal that will receive is transformed to electric signal and electric signal is exported to the function of IC circuit; And waveguide, be suitable for implementation in the optical coupled between optical module and external optical device, wherein, optical module is supported by base substrate and has light-emitting area or an optical receiving surface, the light-emitting area or the optical receiving surface of optical module are directed to base substrate, and waveguide is set on the base substrate along the surface of base substrate.
According to the present invention, because waveguide is set up along the surface of base substrate, it can suppress whole height of devices on the thickness direction of base substrate, thereby reaches the low height of device.
Description of drawings
Fig. 1 is according to first embodiment of the present invention display light electric conversion means and is connected to the synoptic diagram of structure of the wiring substrate of photo-electric conversion device;
Fig. 2 is the emission side light-to-current inversion exploded view partly of the photo-electric conversion device of first embodiment;
Fig. 3 A is the side view that the base substrate of optical module is installed thereon;
Fig. 3 B is the sectional view of the line A-A in Fig. 3 A;
Fig. 4 A is the stereographic map of slot type electric connector;
Fig. 4 B is the stereographic map of joint-type electric connector;
Fig. 5 is the exploded view of light-receiving sidelight electricity conversion fraction of the photo-electric conversion device of first embodiment;
Fig. 6 A to 6C is a diagrammatic sketch of explaining the manufacture process of photo-electric conversion device;
Fig. 7 A to 7B is a diagrammatic sketch of explaining the manufacture process of photo-electric conversion device;
Fig. 8 A is the planimetric map of the base substrate after forming waveguide;
Fig. 8 B is the sectional view of Fig. 8 A;
Fig. 8 C is the planimetric map according to the base substrate of manufacture method after forming waveguide of variation;
Fig. 8 D is the sectional view of Fig. 8 C;
Fig. 9 is the synoptic diagram of structure that shows the photo-electric conversion device of variation 1;
Figure 10 A to Figure 10 C is the synoptic diagram of structure that shows the photo-electric conversion device of variation 2;
Figure 11 A to Figure 11 B is the synoptic diagram of structure that shows the photo-electric conversion device of variation 3;
Figure 12 is the synoptic diagram of structure that shows the photo-electric conversion device of variation 4;
Figure 13 is the synoptic diagram of structure that shows the photo-electric conversion device of variation 5;
Figure 14 A is the synoptic diagram of the structure of display light electric conversion means and wiring substrate according to a second embodiment of the present invention;
Figure 14 B is the sectional view of the line I-I in Figure 14 A;
Figure 15 is the stereographic map of slot type electric connector;
Figure 16 A is the synoptic diagram that shows the structure of the photo-electric conversion device of variation and wiring substrate;
Figure 16 B is the sectional view of the line II-II in Figure 16 A;
Figure 17 is the stereographic map of joint-type electric connector;
Figure 18 is the synoptic diagram of the structure of a third embodiment in accordance with the invention display light electric conversion means and wiring substrate;
Figure 19 A is the stereographic map of the interposer substrate of watching from the top;
Figure 19 B is the stereographic map of the interposer substrate of watching from the below;
Figure 20 is the synoptic diagram that shows the structure of the photo-electric conversion device of variation and wiring substrate;
Figure 21 is the synoptic diagram of the structure of a fourth embodiment in accordance with the invention display light electric conversion means;
Figure 22 A is the outboard profile that circuit film is connected to its external waveguide;
Figure 22 B is the upward view of circuit film;
Figure 23 is the synoptic diagram of the structure of display light electric conversion means according to a fifth embodiment of the invention;
Figure 24 A is the side view of the base substrate of variation;
Figure 24 B is the upward view of the base substrate of variation;
Figure 25 A is the side view of the base substrate of variation;
Figure 25 B is the upward view of the base substrate of variation;
Figure 26 is the side view of the base substrate of variation;
Figure 27 A is the planimetric map of the base substrate of variation;
Figure 27 B is the side view of the base substrate of variation;
Figure 28 is the side view of the base substrate of variation;
Figure 29 A is the side view of the base substrate of variation;
Figure 29 B is the upward view of the base substrate of variation;
Figure 30 is the upward view of the base substrate of variation;
Figure 31 A is the stereographic map of the base substrate of variation;
Figure 31 B is the sectional view of the line III-III in Figure 31 A;
Figure 32 A is the stereographic map of the base substrate of variation;
Figure 32 B is the sectional view of the line IV-IV in Figure 32 A;
Figure 33 A is the side view of the base substrate of variation;
Figure 33 B is the stereographic map of the base substrate of variation; And
Figure 34 A and Figure 34 B are the synoptic diagram of structure that shows the photo-electric conversion device of variation.
The primary clustering symbol description
2 wiring substrates; 1A～1E photo-electric conversion device;
3 base substrates; 1A2 light emitting side photoelectricity conversion fraction;
The 4A luminescence component; 4B, 17 optical fiber receive modules;
5A, 5B IC substrate; 6 joints;
7 slots; 8 interposer substrate;
9 external waveguides; 10,12,15 solder ball;
11 projections; 13 resin structure parts;
14 bendable circuit films; The 14a lead;
The 16a radiating fin; The 16A radiating component;
The 16B thermal hole; The 16C radiating subassembly;
The 18A tin cream; 20 Silicon Wafers;
31 inner waveguide; The 31a core layer;
The 31b clad; 32 grooves;
33 mirror parts; 34 through holes;
35 waveguides; 36 wiring patterns;
37 penetrating electrode; 38,62b, 72b recess;
50A, 50B IC circuit; 61,71 terminals;
62 adapter body; 62a accessory protuberance;
72 socket body; 72a accessory dimple;
81 the superiors; 82 middle layers;
83 orlops; 91 mirror surfaces;
141 ends; 311 incident portion;
312 radiating portions; 313 branches;
1A1,1A3～1A7,1B1～1E1 emission side light-to-current inversion part.
Embodiment
Below, consult description of drawings most preferred embodiment of the present invention.
Fig. 1 is according to first embodiment of the present invention display light electric conversion means 1A.Photo-electric conversion device 1A comprises: emission side light-to-current inversion part (being also referred to as the E/O module) 1A1 is suitable for by being installed on the wiring substrate 2 in conjunction with joint (header) (electric connector) 6 and slot (electric connector) 7; Light emitting side photoelectricity conversion fraction (being also referred to as the O/E module) 1A2 is suitable for by in conjunction with electric connector 6 and 7 and by the wiring substrate 2 that is mounted to other similarly; And external waveguide 9, be suitable for implementation in the optical coupled between conversion fraction 1A1 and the 1A2.Just, in photo-electric conversion device 1A, the electrical converter on the opposite side of watching from emission side light-to-current inversion part 1A1 or light-receiving sidelight electricity conversion fraction 1A2 partly is placed as " external optical device ".
Attention is in this instructions, vertical direction among Fig. 1 is represented vertical direction, and direction indication left and right directions perpendicular to the paper among Fig. 1, and right side among Fig. 1 and left side are represented front and the back of emission side light-to-current inversion part 1A1 respectively, and front and the back of light-receiving sidelight electricity conversion fraction 1A2 are represented in left side among Fig. 1 and right side.
Emission side light-to-current inversion part 1A1 is provided with base substrate 3, and it is formed in the upwardly extending rectangle in front and back in the planimetric map.As shown in Figure 2, on a surperficial 3a of the lower surface that is set to base substrate 3, luminescence component 4A and IC substrate 5A are installed, this luminescence component 4A is transformed to light signal and emission light with electric signal, and this IC substrate 5A is formed for electric signal is sent to the IC circuit 50A of luminescence component 4A therein.Joint-type electric connector (hereinafter referred to as " joint ") 6 is provided so that and covers these assemblies 4A and 5A from the below.Moreover, on a surperficial 3a of base substrate 3, be formed in the wiring pattern 36 shown in Fig. 6 C in order to the power lead of the signal line of driven for emitting lights assembly 4A.Moreover, on base substrate 3, to be set at by mirror part (mirrorportion) 33 of about 90 degree of the optical path conversion of luminescence component 4A emitted light beams just in time on the position above the luminescence component 4A, and be provided so that the front end face 3b that extends to base substrate 3 from mirror part 33 with inner waveguide 31 that luminescence component 4A is coupled optically.
For fear of the influence of when mounted heat and the stress influence in operating environment, hardness is necessary for base substrate 3.Moreover, in the situation that light penetrates, be necessary because the light from luminescence component to optical fiber receive module penetrates efficient, it needs pin-point accuracy ground that optical module is installed, and suppresses as far as possible because the change in location that the heat affecting in using causes.Therefore, silicon substrate is used as base substrate 3.Moreover base substrate 3 is preferably formed by the material that has near the thermal linear expansion coefficient of luminescence component 4A, and can be formed by the compound semiconductor such as GaAs, its be except silicon with VCSEL material identical materials system.Perhaps, base substrate 3 also can be formed by stupalith, such as aluminium nitride and silicon nitride, as the material with favorable linearity expansion coefficient and pyroconductivity.
As external waveguide 9, using the waveguide by the bendable film like that the thinning of resin optical waveguide is obtained is convenient with regard to manipulation.Just, the external waveguide 9 of film like has good bending features, even and therefore also no problem when it is used in the sweep of mobile phone for example etc.Though light loss can be depending on crooked curvature and takes place, it may reduce light loss by the refringence that is increased between core layer and clad.Attention is as external waveguide 9, also can use based on the optical fiber of quartz or plastic optical fiber but not the waveguide of film like.
Particularly, the front end face 3b of base substrate 3 and external waveguide 9 are set to 5 to 30 μ m, and adhesive agent is filled in the gap so that by UV cured.Perhaps, the gap that it can be when being set to about 100 μ m in the gap be filled in adhesive agent between base substrate 3 and the external waveguide 9 reduces the gap then, to fill adhesive agent without any the shortcoming of adhesive agent.
Note when being formed on base substrate 3 in order to the groove 32 that forms waveguide, it can be by being formed on other parts with groove, externally be provided with in the waveguide 9 simultaneously shaping part so that and fillister joint, to be reduced at the location between base substrate 3 and the external waveguide 9 and to realize passive aligning.Joint 6 is the types that can be filled to slot type electric connector (be designated hereinafter simply as " slot ") 7 and separate from slot 7, and slot 7 is the aerial lugs that are set on the wiring substrate 2.Notice that joint 6 and slot 7 can replace each other.It can be suitable for makes slot 7 be set on the base substrate 3 and joint 6 is set on the wiring substrate 2, so that joint 6 is as aerial lug.
On the other hand, joint 6 is formed rectangle substantially, and it extends upward less than the size of slot 7 and in the front and back of the upward view shown in Fig. 4 B.The terminal 61 that joint 6 has adapter body 62 and supported by adapter body 62.Can cooperate accessory protuberance (fitting protrusion) 62a of rectangular frame shape of the accessory dimple 72a of slot 7 in upward view, to be formed in the adapter body 62, and terminal 61 is exposed on the surface of accessory protuberance 62a.Moreover the end of terminal 61 extends upward at right and left from adapter body 62, and is connected to the wiring pattern 36 of base substrate 3 by solder ball 10.For joint 6 is mounted to base substrate 3, except solder ball, it can use pile crown or pin etc.Note comprising that the height of base substrate 3 and solder ball 10 is about 1mm.
When the accessory protuberance 62a of joint 6 is inserted among the accessory dimple 72a of slot 7 so that with accessory dimple 72a when chimeric, terminal 61 and 71 contacts with each other, and makes the wiring pattern of wiring substrate 2 be electrically connected to the wiring pattern 36 of base substrate 3.At this moment, the height from the lower surface of slot 7 to the upper surface of joint 6 is about 1mm.Thereby when emission side light-to-current inversion part 1A1 was installed on the wiring substrate 2, the height from the upper surface of wiring substrate 2 to another surperficial 3c of base substrate 3 was about 2mm.
Because the base configuration of light-receiving sidelight electricity conversion fraction 1A2 is identical with emission side light-to-current inversion part 1A1, its detailed explanation is omitted.The difference of noting light-receiving sidelight electricity conversion fraction 1A2 and emission side light-to-current inversion part 1A1 is that optical fiber receive module 4B and IC substrate 5B are installed on the surperficial 3a of base substrate 3, as shown in Figure 5, optical fiber receive module 4B receives light and the light signal is transformed into electric signal, and IC substrate 5B wherein is formed for receiving from optical fiber receive module 4B the IC circuit 50B of electric signal.PD (optical diode) is used as optical fiber receive module 4B, and IC substrate 5B is TIA (commentaries on classics impedance amplifier) assembly, and it carries out current/voltage conversion.Moreover amplifier block also can be installed on the base substrate 3.
Secondly, consult Fig. 6 and Fig. 7, the manufacture method of the electric conversion means 1A of Mingguang City.
Attention in photo-electric conversion device 1A, emission side light-to-current inversion part 1A1 and light-receiving sidelight electricity conversion fraction 1A2 can be made respectively and its manufacture method identical.So, on behalf of the method, the manufacture method of emission side light-to-current inversion part 1A1 be illustrated.
1) in this manufacture method, as shown in Figure 6A, a plurality of base substrates 3 are formed simultaneously by using Silicon Wafer (silicon substrate) 20, and Silicon Wafer 20 is cut and is divided into other base substrate 3 at last.Attention is in Fig. 6 and Fig. 7, and the figure on upper strata shows whole Silicon Wafer, and the figure of lower floor shows a part corresponding to single base substrate 3 with the yardstick that amplifies.As Silicon Wafer 20, its crystal orientation is selected to be to be prepared to be used for the etching carried out at the following step.
2) shown in Fig. 6 B, be used for being formed for to form the groove 32 of waveguide and 45 degree inclined surfaces of mirror part 33 are formed in the Silicon Wafer 20.These are to utilize the difference of the etch-rate of silicon crystal to be formed by anisotropic etching.In this case, in order to form 45 degree inclined surfaces, etch mask shape, etchant concentration and chemical constitution are adjusted.Except anisotropic etching, a kind of formation method of dry ecthing is arranged, such as the reactive ion etching method, in order to be formed for forming the groove 32 of waveguide.
Shown in Fig. 8 A and 8B, when the groove that is used to form waveguide 32 of cross section with rectangle substantially and 45 degree inclined surfaces by non-etc. when etching forms, these etching condition differs from one another.Just, the chemical constitution of etching solution is different to these.Therefore, it must carry out etching in two steps.But, arbitrary step all can be by first execution.
Perhaps, when the groove 32 that is used to form waveguide and 45 degree inclined surfaces when being formed simultaneously, the cross sectional shape that is used to form the groove 32 of waveguide is formed trapezoidal substantially, makes the recess width of the groove 32 that is used to form waveguide increase, shown in Fig. 8 C and Fig. 8 D.Because except the groove 32 that is used to form waveguide is extended to the weld pad of the luminescence component 4A that forms in the following step all no problemly, the groove 32 that is used to form waveguide can be formed in this way.
3) shown in Fig. 6 C, the wiring pattern 36 that is used to install luminescence component 4A is formed on Silicon Wafer 20.Wiring is patterned by vapor deposition of gold on Silicon Wafer 20.At this moment, gold is also spent on the inclined surfaces 45 by vapour deposition simultaneously, so that form mirror part 33.Note depending on the wavelength that to be used, because it does not have vapor deposition of gold on 45 degree inclined surfaces, it can use 45 degree inclined surfaces as mirror part 33, but for example, when near-infrared light source was used, it can increase reflectivity and coupling efficiency by vapor deposition of gold on 45 degree inclined surfaces.The simple viewpoint that reaches the fiduciary level that connects that attention is installed from the scolding tin subsequent step, as the wiring material beyond the gold, the sandwich construction of the sandwich construction of titanium, nickel, gold or chromium, nickel, gold etc. can be formed on the base substrate 3.For example, the thickness when forming sandwich construction is respectively 0.5 μ m, 1 μ m, and 0.2 μ m.
4) shown in Fig. 7 A, inner waveguide 31 is formed in the groove 32 that is used to form waveguide.At first, coating layer material is filled in the groove 32 that is used to form waveguide.Then, coating layer material is pressed by using the metal pattern (not shown), makes the groove (not shown) of core layer be formed.Then, the groove of core layer is filled core material layer, makes core layer 31a be formed.At last, clad 31b is formed to core layer 31a is last by applying coating layer material.
Attention inner waveguide 31 can not used metal pattern and is formed.At first, whole Silicon Wafer 20 is at 1100 ℃ high-temperature oxydation stove 250 minutes and oxidized, makes the silicon oxide layer of thickness with 1 to 2 μ m be formed on the surface, inside of the groove 32 that is used to form waveguide.Then, core material layer is filled in the groove 32 that is used to form waveguide, makes core layer 31a be formed.Moreover the coating layer material that has near Si oxide person's refractive index is applied on the core layer 31a, makes clad 31b to be made of silicon oxide layer and coating layer material.
5) shown in Fig. 7 B, luminescence component 4A and IC substrate 5A are installed on the Silicon Wafer 20.Projection 11 is formed on luminescence component 4A and the IC substrate 5A by golden projection connection.Ultrasonic engage by with 200 ℃ of heating Silicon Wafers 20, luminescence component 4A, and IC substrate 5A be performed.
Though note not showing, after luminescence component 4A and IC substrate 5A were mounted, the intensity that engages base substrate and luminescence component 4A and IC substrate 5A was by being reinforced at filling underfilling between luminescence component 4A and the base substrate 3 and between IC substrate 5A and base substrate 3.Moreover in order to improve the environment drag, whole parts can be sealed by the rubber-like encapsulating material.
6) thereafter, scaling powder is coated on the electrode part of wiring pattern 36, and solder ball 10 is arranged.Then, Silicon Wafer 20 is cut, so that be divided into other base substrate 3.
7) last, it can be installed on the base substrate 3 joint 6 to make emission side light-to-current inversion part 1A1 by utilizing solder ball 10.
Then, as mentioned above, external waveguide 9 is engaged to emission side light-to-current inversion part 1A1 and light-receiving sidelight electricity conversion fraction 1A2, and it is manufactured in this way, makes that emission side light-to-current inversion part 1A1 and light-receiving sidelight electricity conversion fraction 1A2 is connected each other optically.
In the photo-electric conversion device 1A of first embodiment, when waveguide is made up of mirror part 33, inner waveguide 31 and external waveguide 9, and inner waveguide 31 is when a surperficial 3a of base substrate 3 is set up, joint 6 is set on the surperficial 3a of base substrate 3, and luminescence component 4A or optical fiber receive module 4B are installed thereon.Thereby it may be suppressed at the whole height of devices on the thickness direction of base substrate 3, and reaches the low clearance of device.
Therefore moreover base substrate 3 is silicon substrates, and mirror part 33 and inner waveguide 31 can easily be formed.
Attention is in first embodiment, as photo-electric conversion device 1A, show a kind of one-way communication type, wherein the light signal is sent to light-receiving sidelight electricity conversion fraction 1A2 from emission side light-to-current inversion part 1A1, but photo-electric conversion device 1A can be the both-way communication type, wherein optical fiber receive module 4B is installed among the emission side light-to-current inversion part 1A1, and luminescence component 4A is installed among the light-receiving sidelight electricity conversion fraction 1A2, and a plurality of waveguide 31 is formed in the base substrate 3.Moreover photo-electric conversion device 1A can be equipped with at least one among external waveguide 9 and emission side light-to-current inversion part 1A1 and the light-receiving sidelight electricity conversion fraction 1A2.Moreover, all be that communication describes to single channel in one-way communication type and the both-way communication type.But, photo-electric conversion device 1A can be multichannel communication type, and wherein, emission of digit group type light and receiving unit are mounted, and a plurality of waveguide also can be formed so that be used as external waveguide 9.
Moreover, can carry out different distortion to the photo-electric conversion device 1A of first embodiment.Below, the variation 1 of photo-electric conversion device 1A to variation 5 is to consult Fig. 9 to Figure 13 to describe.But, in variation, light-receiving sidelight electricity conversion fraction also divides identically with the emission side photoelectric conversion department, and therefore has only the emission side light-to-current inversion partly to be illustrated.
In the emission side light-to-current inversion part 1A3 of variation shown in Figure 91, base substrate 3 is arranged so that the surperficial 3a of luminescence component 4A is installed and is set to upper surface, and be provided with penetrating electrode (through-electrode) 37 in base substrate 3, it will be formed on a wiring pattern (not shown) on the surperficial 3a and electrically be connected to the wiring pattern (not shown) that is formed on another surperficial 3c.On another surperficial 3c of base substrate 3, IC substrate 5A is installed, and is provided with joint 6.Thereby it can be regional by the surperficial 3a and the 3c fixed installation of base substrate 3, and base substrate 3 is minimized.
In the emission side light-to-current inversion part 1A4 of the variation shown in Figure 10 A 2, be similar to variation 1, base substrate 3 is arranged so that a surperficial 3a is set at upper surface, and penetrating electrode 37 is set in the base substrate 3.On another surperficial 3c of base substrate 3, directly form in order to the IC circuit 50A of transmission electric signal, and be provided with joint 6 to luminescence component 4A.In other words, it is configured so that the function of IC substrate 5A is provided in base substrate 3.This can minimize device it.
Notice that IC circuit 50A not necessarily is formed on another surperficial 3c, also can be formed on the surperficial 3a shown in Figure 10 B.Perhaps, shown in Figure 10 C, base substrate 3 can be arranged and make a surperficial 3a luminescence component 4A being installed and forming IC circuit 50A be set to lower surface thereon, and joint 6 is formed on the surperficial 3a.It is unnecessary that this makes that penetrating electrode 37 becomes.
In the emission side light-to-current inversion part 1A5 of the variation shown in Figure 11 A 3, luminescence component 4A is installed on the IC substrate 5A, and IC substrate 5A is installed on the surperficial 3a of base substrate 3.Just, luminescence component 4A is installed on the surperficial 3a of base substrate 3 by IC substrate 5A.Particularly, luminescence component 4A is installed on the IC substrate 5A by crystal grain joint and wire-bonded.Moreover in order to be fixed on the predetermined gap between IC substrate 5A and the base substrate 3, IC substrate 5A is connected to the wiring pattern (not shown) on the surperficial 3a who is formed at base substrate 3 by solder ball 12.In order to be fixed on the somewhat big gap between joint 6 and the base substrate 3, joint 6 is installed on the surperficial 3a of base substrate 3 with somewhat big solder ball 10.
Thereby after luminescence component 4A was installed on the IC substrate 5A, IC substrate 5A can be installed on the base substrate 3, can carry out the aligning of luminescence component 4A with respect to mirror part 33 after making.
Attention in order to prevent the disturbing recess 38 of luminescence component 4A can be set in the base substrate 3, makes waveguide 31 be formed on the basal surface of recess 38 shown in Figure 11 B.
In the emission side light-to-current inversion part 1A6 of variation shown in Figure 12 4, resin structure part 13 is formed on front end and the rear end of a surperficial 3a of base substrate 3, and the IC substrate 5A that luminescence component 4A is installed thereon is installed on the base substrate 3 by resin structure part 13.Joint 6 is installed in the lower surface of IC substrate 5A with solder ball 10, and joint 6 is set on the surperficial 3a of base substrate 3 by IC substrate 5A and resin structure part 13.Thereby it also can be formed for IC substrate 5A is positioned at part on the resin structure part 13, the location that makes it can pin-point accuracy carry out mirror part 33 and luminescence component 4A.
In the emission side light-to-current inversion part 1A7 of variation shown in Figure 13 5, through hole 34 is set on the base substrate 3 position corresponding to luminescence component 4A, and light-transmissive resin is filled in the through hole 34, makes assistant waveguide 35 be formed.Joint 6 is set on the surperficial 3a of base substrate 3, and external waveguide 9 is incorporated in to another surperficial 3c of base substrate 3.
Even in this mode, it also can reach the low clearance of whole device.But, to structure shown in Figure 12, it can make height of devices be lower than in structure shown in Figure 13 with Fig. 1.
Notice that known high speed transfer assembly produces noise usually, but be arranged so that when coverage diagram 1, Figure 10 C, Figure 11, Figure 12 and luminescence component 4A shown in Figure 13 when base substrate 3, base substrate 3 as ground connection so that the effect of inhibition noise to be provided.
Secondly, consult the photo-electric conversion device 1B that Figure 14 to Figure 17 illustrates the second embodiment of the present invention.Attention is in second embodiment and follow-up embodiment, and it is identical that light-receiving sidelight electricity conversion fraction and emission side photoelectric conversion department divide, therefore only explanation and explanation emission side light-to-current inversion part.Moreover the assembly identical with the first embodiment person is to be labeled identical reference number, and omits its explanation.
In the structure that shows in Figure 14 and Figure 15, joint 6 is set on the wiring substrate 2, and slot 7 is arranged on the base substrate 3 of emission side light-to-current inversion part 1B1.
More particularly, in the socket body 72 of slot 7, the upwardly extending rectangular recess 72b in the front and back in upward view is set in the parts that centered on by accessory dimple 72a, and terminal 71 is exposed on the basal surface of recess 72b.
On the other hand, base substrate 3 is arranged and makes the surperficial 3a that luminescence component 4A is installed be set to upper surface thereon.In base substrate 3 is loaded into state among the recess 72b of slot 7, to be exposed on terminal 71 on the basal surface of recess 72b by solder ball 10 and be connected to circuit pattern (not shown) on the surperficial 3a who is formed on base substrate 3, thereby the basal surface of recess 72b will be bonded to a surperficial 3a of base substrate 3.
In this way, when the recess 72b that wherein can include base substrate 3 in was set in the slot 7, it can reach the low clearance of device.
Attention is arranged in the base substrate 3 by making penetrating electrode 37 be similar to embodiment 1, and it also can arrange base substrate 3, makes one surface 3a be set to lower surface, and the basal surface of the recess 72b of slot 7 is incorporated in to another surperficial 3c of base substrate 3.Moreover it also can use the variation 1 that is shown among first embodiment to variation 5.
Moreover as Figure 16 and shown in Figure 17, slot 7 can be set on the wiring substrate 2, makes joint 6 be set on the base substrate 3 of emission side light-to-current inversion part 1B1.In this case, terminal 61 can be exposed on the basal surface of recess 62b, its be by by the accessory protuberance 62a of the adapter body 62 of joint 6 around and form, and terminal 61 can be connected to the wiring pattern (not shown) of a surperficial 3a of base substrate 3 by solder ball 10.But, for fear of disturbing base substrate 3, recess 72b is set in the socket body 72 of slot 7.
Secondly, the photo-electric conversion device 1C of a third embodiment in accordance with the invention is displayed among Figure 18.In the emission side light-to-current inversion part 1C1 of the 3rd embodiment, interposer substrate (interposer substrate) (wiring substrate) 8 is inserted between the surperficial 3a and joint 6 of base substrate 3.Just, the upper surface of interposer substrate 8 is connected to a surperficial 3a of base substrate 3 by solder ball 15, and joint 6 is connected to the lower surface of interposer substrate 8 by solder ball 10.
Attention is at the electrode number in the superiors 81 and not necessarily be suitable in interposer substrate 8 correspondingly one to one at the electrode number on the orlop 83, and it also can make at the electrode in the superiors 81 and is one by gathering and is electrically connected to electrode on the orlop 83.Therefore, it also can assemble the number that line of electric force reduces the terminal of joint 6 and slot 7 by using interposer substrate 8.
In this way, it can improve the dirigibility of the wiring pattern of base substrate 3 by using interposer substrate 8.Just, because luminescence component 4A and IC substrate 5A are installed on the base substrate 3, it may be difficult to make the electrode part of wiring pattern 36 of base substrate 3 consistent with the terminal 61 of joint 6.In this kind situation, interposer substrate 8 is effective especially.
Note being similar to the variation 1 of first embodiment, be set in the state of upper surface at a surperficial 3a, base substrate 3 can be arranged between another the surperficial 3c and joint 6 that makes interposer substrate 8 be inserted in base substrate 3.Moreover it also can be applicable to the variation 1 that shows among first embodiment to variation 5.
Moreover, being similar to first and second embodiment, joint 6 and slot 7 can be replaced each other.This is identical with the 3rd to the 5th embodiment that will illustrate below.
Moreover as shown in figure 20, interposer substrate 8 not necessarily is inserted between base substrate 3 and the joint 6.Joint 6 and base substrate 3 can be arranged side by side, and are installed on the interposer substrate 8, make interposer substrate 8 be arranged to extend on joint 6 and base substrate 3.Thereby whole size increases but size on thickness direction is reduced, and it is effective for mobile device, such as the mobile phone that has restriction on thickness direction.
Secondly, the photo-electric conversion device 1D of a fourth embodiment in accordance with the invention is displayed among Figure 21.In the photo-electric conversion device 1D of the 4th embodiment, bendable circuit film 14 is attached on the lower surface of external waveguide 9.
As shown in figure 22, circuit film 14 is suitable for keeping lead by insulating material, and this lead is used for from emission side light-to-current inversion part 1D1 transmission electric power to light-receiving sidelight electricity conversion fraction (not shown) or is used for receiving electric power by emission side light-to-current inversion part 1D1 from light-receiving sidelight electricity conversion fraction.Notice that it not only can transmit or reception electric power by lead 14a, also can transmit or receive various signals.
The entire length of circuit film 14 is set to longer than the length of external waveguide 9, makes the two ends of circuit film 14 extend from external waveguide 9 on fore-and-aft direction.Similarly, it is adapted such that when external waveguide 9 is incorporated in to the front end face of base substrate 3 end 141 of circuit film 14 is overlapping with a surperficial 3a of base substrate 3.
Moreover the end 141 of circuit film 14 is connected to joint 6, and lead 14a is connected directly to joint 6.Particularly, lead 14a is connected to the terminal 61 of joint 6 by solder ball 10.Attention also can be used to this connection such as the conductor of copper-surfaced (copper post) except solder ball 10.
Thereby it can use external waveguide 9 to finish electric wiring between emission side light-to-current inversion part 1D1 and light-receiving sidelight electricity conversion fraction (not shown).Moreover lead 14a is connected directly to joint 6, makes it finish the electrical connection of electric signal and the electrical connection that electric power transmits or receives by single joint 6.
Attention is in the 4th embodiment, and it also can be applicable to the variation 1 that shows among first embodiment to variation 5.
Secondly, photo-electric conversion device 1E according to a fifth embodiment of the invention is displayed among Figure 23.The photo-electric conversion device 1E of the 5th embodiment has the structure identical with the 3rd embodiment person's photo-electric conversion device 1C substantially, but being in the interposer substrate 8 of emission side light-to-current inversion part 1E1 with photo-electric conversion device 1C different is to extend on externally waveguide 9 direction of extending, so that combine with the interposer substrate 8 of light-receiving sidelight electricity conversion fraction (not shown).
Thereby it can use interposer substrate 8 to finish electrical wiring between emission side light-to-current inversion part 1E1 and light-receiving sidelight electricity conversion fraction (not shown).Moreover interposer substrate 8 is suitable for becoming bendable substrate, so interposer substrate 8 can be bent with external waveguide 9.And only the gap corresponding to solder ball 15 is set between external waveguide 9 and the interposer substrate 8.So, external waveguide 9 and interposer substrate 8 can look like same film by stacked and operation, and do not make the degradation of operation.Moreover these are provided with independently, make it can obtain good flexural property.
Moreover in the 5th embodiment, it also can be applicable to the variation 1 that shows among first embodiment to variation 5.
Moreover in above-mentioned first to the 5th embodiment, it also can use following variation.
At first, shown in Figure 24 A and Figure 24 B, a plurality of luminescence component 4A (being eight in the accompanying drawings), each self-emission light beams of different wavelengths, be installed in side by side on the left and right directions on the surperficial 3a of base substrate 3, and the width of inner waveguide 31 is increased by the recess width that increase is used to form the groove 32 of waveguide.The cross sectional shape of noting being used to form the groove 32 of waveguide has to be similar to substantially consults illustrated trapezoidal of Fig. 8 C and Fig. 8 D.
Similarly, be set in the inner waveguide 31 by optical coupled to a plurality of incident portion 311 of each luminescence component 4A and the radiating portion 312 that is connected to incident portion 311 separately.Particularly, a plurality of branches 313 are set at the core layer 31a into inner waveguide 31, so as to make core layer 31 from emitting side to light incident side bifurcated continuously, just from the front end face 3b side of base substrate 3 towards rear side bifurcated continuously.
Thereby, have a plurality of light beams of different wavelengths by stacked and propagated by inner waveguide 31, make it can increase the quantity of the data that can transmit by device significantly.
Perhaps, shown in Figure 25 A and Figure 25 B, when a surperficial 3a that will be installed in base substrate 3 as a luminescence component 4A goes up, luminescence component 4A optical coupled to the incident portion 311 of inner waveguide 31 and a plurality of radiating portions 312 (being eight in the accompanying drawings) of being connected to incident portion 311 is set in the inner waveguide 31.Particularly, a plurality of branches 313 are set at the core layer 31a of inner waveguide 31, so as to make core layer 31a from light incident side towards emitting side bifurcated continuously, just from the back of base substrate 3 towards the front end face 3b of base substrate 3 bifurcated continuously.
Thereby, scattered and propagated by luminescence component 4A emitted light beams by inner waveguide 31, its data that can carry out one-to-many are transmitted.
Secondly, as shown in figure 26, the incident line with radiating fin 16a of its upper edge left and right directions extension is arranged on the radiating component of the upper surface on the fore-and-aft direction (heat abstractor: heat radiator) be incorporated in to another surperficial 3c relative with a surperficial 3a of the base substrate 3 that luminescence component 4A is installed thereon, so that the heat that is produced by luminescence component 4A and IC substrate 5A is dissipated by radiating component 16A.
Thereby it can suppress because the influence that the heat that is produced by luminescence component 4A and IC substrate 5A causes.
Perhaps, base substrate 3 can and constitute by the silicon nitride replacement silicon with good thermal conductivity rate, makes base substrate 3 itself be used as heat abstractor.In view of silicon has the pyroconductivity of 160W/mK, silicon nitride has the pyroconductivity of 200W/mK, so it can make the heat that is produced by luminescence component 4A and IC substrate 5A be conducted to another surperficial 3c of base substrate 3, so that dissipate admirably.
In this case, it can be provided with radiating fin 16a by processing base substrate 3 itself on another surperficial 3c.Thereby it can cause better heat radiation.
Perhaps, shown in Figure 27 A and Figure 27 B, a plurality of thermal hole 16B can be set in the base substrate 3, make the heat that is produced by luminescence component 4A and IC substrate 5A be dissipated by thermal hole 16B.At this, thermal hole 16B forms by the metal with high thermoconductivity of filling such as copper in through hole.
Perhaps, in situation as the 3rd embodiment and the 5th embodiment, interposer substrate 8 is set up and is arranged on the side of a surperficial 3a of base substrate 3, as shown in figure 28, the radiating subassembly 16C that is made of the material with high thermal conductance such as copper also can be provided in interposer substrate 8 and be installed in luminescence component 4A on the surperficial 3a of base substrate 3 and IC substrate 5A between the two, make radiating subassembly 16C contact interposer substrate 8 and luminescence component 4A and IC substrate 5A the two.
Thereby the heat that is produced by luminescence component 4A and IC substrate 5A is conducted to interposer substrate 8 so that dissipated by radiating subassembly 16C.Thereby it can be by reasonably utilizing interposer substrate 8 to disperse the heat that is produced by luminescence component 4A and IC substrate 5A.
Notice that radiating subassembly 16C only need contact at least one among interposer substrate 8 and luminescence component 4A and the IC substrate 5A, and for example radiating subassembly 16C can be suitable for only contacting with interposer substrate 8 and luminescence component 4A.
The 3rd, shown in Figure 29 A and 29B, on a surperficial 3a of base substrate 3, be set at the centre of inner waveguide 31 towards the half-reflecting mirror part 31c that tilts perpendicular to the direction of mirror part 33 substantially, and the optical fiber receive module 17 that is used to monitor is installed in the position corresponding to half-reflecting mirror part 31c.Half-reflecting mirror part 31c is set in the centre of inner waveguide 31 can be by forming slit and half-reflecting mirror inserted in the slit and realize in inner waveguide 31.
The light that half-reflecting mirror part 31c reflects being launched by luminescence component 4A of several number percents and reflected by mirror part 33, and the remaining light of transmission.Therefore, the optical fiber receive module 17 that is used to monitor by the part light of luminescence component 4A emission receives.The optical fiber receive module 17 that is used to monitor is output as the monitoring signal by receiving light in this way with the output of luminescence component 4A.Attention is except being provided with half-reflecting mirror part 31c, it can be suitable for makes that protruding (not shown) is set in the groove 32 that is used to form waveguide, and the leading edge of protruding is constituted as catoptron so that invade to core layer 31a, thereby the leading edge that the part light of being guided by core layer 31a is protruded reflexes to the optical fiber receive module 17 that is used to monitor.
Monitoring signal by optical fiber receive module 17 outputs that are used to monitor is to be sent to IC substrate 5A by the wiring pattern 36b on the surperficial 3a who is formed on base substrate 3.
The IC circuit 50A that is formed among the IC substrate 5A comprises the control circuit (not shown), and it adjusts the electric signal that is transferred into luminescence component 4A by wiring pattern 36a.Based on the monitoring signal by optical fiber receive module 17 outputs that are used to monitor, control circuit is adjusted electric signal so that the output of luminescence component 4A is fixed.
Thereby it can make the output of luminescence component 4A fix, and is not subjected to the environmental impact such as temperature.
Attention can receive the part light of being launched by luminescence component 4A for the optical fiber receive module 17 that is used in monitoring, for example as shown in figure 30, branch 313 can be formed among the core layer 31a of inner waveguide 31 to form individual path 31a ', makes the optical fiber receive module 17 that is used to monitor be set at the position corresponding to the leading edge of individual path 31a '.
The 4th, shown in Figure 31 A and Figure 31 B, on a surperficial 3a of base substrate 3, when solder ball 11 ' was used to that luminescence component 4A is mounted to surperficial 3a of base substrate 3, the recess 18 that can include solder ball 11 ' in was set at the position corresponding to solder ball 11 '.Recess 18 is made of the groove on the surperficial 3a who is formed on base substrate 3.
Thereby, solder ball 11 ' can be located with pin-point accuracy by the recess 18 on the surperficial 3a who is set at base substrate 3, make its positional accuracy that can improve luminescence component 4A, and the optical coupled loss 31 of luminescence component 4A and inner waveguide that can reduce that installation site deviation by luminescence component 4A causes.
Notice that recess 18 also can be made of tin cream 18A shown in Figure 32 A and Figure 32 B.Just, having the tin cream 18A of recess 18 can be by applying scolding tin with the shape of circle and being formed simply when using.
Moreover shown in Figure 33 A and 33B, it also can be provided for dropping into the recess 39 of luminescence component 4A and IC substrate 5A on a surperficial 3a of base substrate 3.
Thereby it can be corresponding to luminescence component 4A and the IC substrate 5A height by its quantity reducing apparatus that is dropped into.Particularly, in interposer substrate 8 as in the situation that the 3rd embodiment and the 5th embodiment are set up, can reduce the size of solder ball 15 corresponding to the quantity that luminescence component 4A and IC substrate 5A are dropped into, and in interposer substrate 8 not as in the situation that the 3rd embodiment and the 5th embodiment are set up, can reduce the size of solder ball 10 corresponding to the quantity that luminescence component 4A and IC substrate 5A are dropped into.
The 5th, in interposer substrate 8 as be set up at the 3rd embodiment and the 5th embodiment, and have and be used for transmitting electric power to light-receiving sidelight electricity conversion fraction (not shown) and shown in the 4th embodiment, be set at the situation of external waveguide 9 from the circuit film 14 that light-receiving sidelight electricity conversion fraction receives the lead 14a of electric power, the end 141 of circuit film 14 is incorporated in to the upper surface of interposer substrate 8 shown in Figure 34 A, make lead 14a be connected directly to interposer substrate 8.
At this, also lead 14a can be connected directly to base substrate 3.But, when lead 14a is suitable for being connected directly to interposer substrate 8 shown in Figure 34 A, the wiring pattern 36 that is formed on the base substrate 3 can be reduced more than the situation that lead 14a is connected directly to base substrate 3.This makes its size that can reduce base substrate 3, and prevents to be transferred into base substrate such as the influence of the noise source of the power lead that is made of lead 14a.Moreover this makes it can form some electric signal lines.
Perhaps, shown in Figure 34 B, it can be divided into two by circuit film 14, and end 141 is incorporated in to the upper surface of interposer substrate 8, and another end 141 is incorporated in to the mode of the lower surface of interposer substrate 8 lead 14a is connected to going up and lower surface of interposer substrate 8.
Thereby, can further increase the effectiveness of the structure shown in Figure 34 A, and improve strength of joint 8 of circuit film 14 and interposer substrate.
Just, according to a kind of photo-electric conversion device of the invention provides of the foregoing description, it is characterized in that comprising: base substrate; The IC circuit is set on the base substrate; Optical module is suitable for having the electric signal by the output of IC circuit is transformed to light signal and radiative function, or the light signal that will receive is transformed to electric signal and electric signal is exported to the function of IC circuit; And waveguide, be suitable for implementation in the optical coupled between optical module and external optical device, optical module is supported by base substrate and has light-emitting area or an optical receiving surface, the light-emitting area or the optical receiving surface of optical module are directed to base substrate, and are that waveguide is set in the base substrate along the surface of base substrate.
According to the present invention, waveguide is set up along the surface of base substrate, makes the height of the single unit system on its thickness direction that can be suppressed at base substrate, and reaches low device height.
Best, photo-electric conversion device more comprises electric connector, and it is set on the surface or another surface of base substrate, and the IC circuit electrically can be connected to aerial lug.
At this, a surface of base substrate and another surface mean two surfaces on the thickness direction of base substrate.Moreover in said structure, electric connector is provided thereon on the surface of the base substrate that optical module is installed, or on another surface with respect to a surface, thereby the IC circuit can be electrically connected to aerial lug.
In photo-electric conversion device, waveguide preferably includes: the mirror part is suitable for about 90 degree of the optical path conversion of light signal; Inner waveguide is suitable for being configured to partly extend to from mirror the end face of base substrate; And external waveguide, being suitable for the inner waveguide optical coupled to the external optical device, it is incorporated in to the end face of base substrate.
For example, it can be by being provided with through hole in the position corresponding to the optical module of base substrate, and on another surface of base substrate optical fiber etc. is set, and its end is cut with the angles of 45 degree, and constitutes waveguide.But, as mentioned above, when waveguide by being set at mirror part in the base substrate and inner waveguide and when constituting, comparing with above-mentioned structure, more the height of reducing apparatus by the external waveguide of the end face that is incorporated in to base substrate.
In photo-electric conversion device, base substrate is silicon substrate preferably.
When base substrate was silicon substrate in this mode, mirror part and inner waveguide can be formed easily.
In photo-electric conversion device, preferably electric connector is equipped with the recess of the base substrate of wherein can packing into, and the basal surface of recess is linked to a surface or another surface of base substrate.
According to said structure, the recess of the base substrate of can packing into is set in the electric connector, makes its further height of reducing apparatus.
In photo-electric conversion device, be preferably used in the wiring substrate that changes electrode pattern and be inserted between base substrate and the electric connector.
By being used to change the wiring substrate of electrode pattern in this way, can improve the dirigibility of the wiring pattern of base substrate.
In photo-electric conversion device, preferably but the wiring substrate is the bendable substrate of the free bend that extends in the direction that waveguide is extended, and is used for transmitting electric power and is formed on the wiring substrate to other photo-electric conversion device and from the circuit that other photo-electric conversion device receives electric power.
According to this structure, can finish electrical wiring with other photo-electric conversion device by utilizing the wiring substrate.Moreover the wiring substrate is bendable substrate, makes it can the wiring substrate is crooked with waveguide.
In photo-electric conversion device, be preferably used in and transmit electric power and be set at waveguide, and lead is connected directly to electric connector to other photo-electric conversion device and from the lead that other photo-electric conversion device receives electric power.
By in this way lead being arranged at waveguide, can be done by utilizing waveguide with the electric wiring of other photo-electric conversion device.Moreover lead is connected directly to electric connector, makes it finish being electrically connected of being electrically connected of electric signal and electric power transmission or reception by single electric connector.
In photo-electric conversion device, a plurality of luminescence components of preferably launching the light beam of the wavelength that differs from one another are installed on the base substrate as optical module, and waveguide has by a plurality of incident portion of optical coupled luminescence component extremely separately, and is connected to the radiating portion of incident portion.
According to this structure, a plurality of light beams with different wave length are suitable for overlapping state by duct propagation, make it can increase the quantity of the data that can be transmitted by single device significantly.
In photo-electric conversion device, preferably luminescence component is mounted as the optical module on base substrate, and waveguide comprises by optical coupled to the incident portion of luminescence component and be connected to a plurality of radiating portions of incident portion.
According to this structure, be suitable for being scattered and by duct propagation by the luminescence component emitted light beams, its data that can carry out one-to-many are transmitted.
In photo-electric conversion device, be preferably used in the heat abstractor that disperses the heat that produces by optical module and be set on the base substrate.
According to this structure, dispersed by heat abstractor by the heat that optical module produces, make it can suppress the influence of the heat that produces by optical module.
In photo-electric conversion device, preferably further be provided with and have the IC circuit that is formed on wherein and be installed in IC substrate on the base substrate, the wiring substrate is inserted between base substrate and the electric connector, and the radiating subassembly with high thermal conductance is arranged between wiring substrate and the base substrate, so as with the wiring substrate contacts and with optical module and be installed in IC substrate on the base substrate one of them contact.
According to this structure, the heat that is produced by optical module or IC substrate is suitable for being conducted to the wiring substrate and being dispersed by radiating subassembly, makes it disperse the heat that is produced by optical module or IC substrate by reasonably utilizing the wiring substrate.
In photo-electric conversion device, preferably be installed in base substrate as the luminescence component of optical module and the optical fiber receive module that is used to monitor, it is by receiving the output of exporting luminescence component by the part of the light of luminescence component emission with as monitoring signal, and the IC circuit comprises control circuit, it is suitable for will being transferred into the electric signal of luminescence component according to the monitoring signal adjustment of exporting from the optical fiber receive module that is used to monitor, so that make the output of luminescence component fix.
According to this structure, the output of luminescence component can be fixing, and is not subjected to the environmental impact such as temperature.
In photo-electric conversion device, preferably optical module is installed on the base substrate by solder ball, and the recess of the solder ball of can packing into therein is set at the position on the base substrate, is arranged in this place's solder ball.
According to this structure, solder ball can be positioned with pin-point accuracy by a lip-deep recess that is set at base substrate, makes its positional accuracy that can improve optical module and reduces the optical coupled loss between optical module and waveguide that the installation site deviation by optical module causes.
In photo-electric conversion device, being preferably in wherein, the recess of input optics assembly is set in the base substrate.
According to this structure, its can corresponding to optical module by its quantity that is dropped into the height of reducing apparatus.
In photo-electric conversion device, be preferably used in and transmit electric power and be set up and be connected directly to the wiring substrate to another photo-electric conversion device and from the lead that another photo-electric conversion device receives electric power.
Just, be set at the situation of waveguide to another photo-electric conversion device and from the lead that another photo-electric conversion device receives electric power being used for transmitting electric power, also lead can be connected directly to base substrate.But, as in said structure, when lead was suitable for being connected directly to the wiring substrate, the situation that is connected directly to base substrate with lead was compared, and can reduce the wiring pattern that will be formed on the base substrate more.
Industrial applicability
According to the present invention, it can reach the low clearance of photo-electric conversion device.
Claims (16)
1. photo-electric conversion device comprises:
Base substrate;
The IC circuit is set on the base substrate;
Optical module is suitable for having the electric signal by the output of IC circuit is transformed to light signal and radiative function, or the light signal that will receive is transformed to electric signal and electric signal is exported to the function of IC circuit; And
Waveguide is suitable for implementation in the optical coupled between optical module and external optical device,
Wherein, optical module is supported by base substrate and has light-emitting area or optical receiving surface, and the light-emitting area or the optical receiving surface of optical module are directed to base substrate,
And waveguide is set in the base substrate along the surface of base substrate.
2. photo-electric conversion device as claimed in claim 1 more comprises: electric connector is suitable for being set at a surface of base substrate or another surface and goes up and the IC circuit can be electrically connected to aerial lug.
3. photo-electric conversion device as claimed in claim 1 or 2 is characterized in that waveguide comprises the mirror part, is suitable for about 90 degree of the optical path conversion of light signal; Inner waveguide is suitable for being configured to partly extend to from mirror the end face of base substrate; And external waveguide, be suitable for being incorporated in to the end face of base substrate and be implemented in inner waveguide and external waveguide between optical coupled.
4. photo-electric conversion device as claimed in claim 3 is characterized in that base substrate is a silicon substrate.
5. photo-electric conversion device as claimed in claim 2 is characterized in that, but the recess of mounting seat substrate be set in the electric connector, and the bottom surface of recess is incorporated in to a surface or another surface of base substrate.
6. photo-electric conversion device as claimed in claim 2 is characterized in that, the wiring substrate that is suitable for changing electrode pattern is inserted between base substrate and the electric connector.
7. photo-electric conversion device as claimed in claim 6, it is characterized in that, but the wiring substrate is the bendable substrate of the free bend that extends in the direction that waveguide is extended, and is used for transmitting electric power and is formed on the wiring substrate to other photo-electric conversion device and from the circuit that other photo-electric conversion device receives electric power.
8. photo-electric conversion device as claimed in claim 1 is characterized in that, reach the lead that receives electric power from other photo-electric conversion device for waveguide is provided for transmitting electric power to other photo-electric conversion device, and lead is connected directly to electric connector.
9. photo-electric conversion device as claimed in claim 1 or 2, it is characterized in that, the a plurality of luminescence components that are suitable for launching the light beam with the wavelength that differs from one another are installed to be optical module, and waveguide comprises a plurality of incident portion that are suitable for optical coupled luminescence component extremely separately, and is connected to the radiating portion of incident portion.
10. as the photo-electric conversion device of claim 1 or 2, it is characterized in that, luminescence component is mounted as the optical module on base substrate, and waveguide comprises incident portion that is coupled to luminescence component optically and a plurality of radiating portions that are connected to incident portion.
11. photo-electric conversion device as claimed in claim 1 or 2 is characterized in that, the heat abstractor that is suitable for dispersing the heat that is produced by optical module is set on the base substrate.
12. photo-electric conversion device as claimed in claim 6 more comprises: the IC substrate, it has the IC circuit that is formed on wherein and is installed on the base substrate,
Wherein, the wiring substrate is inserted between base substrate and the electric connector, and the radiating subassembly with high thermal conductance is arranged between wiring substrate and the base substrate, with the wiring substrate contacts and with optical module and be installed in IC substrate on the base substrate one of them contact.
13. photo-electric conversion device as claimed in claim 1, it is characterized in that, be installed in base substrate as the luminescence component of optical module and the optical fiber receive module that is used to monitor, it is suitable for by receiving the output of exporting luminescence component by the part of the light of luminescence component emission with as monitoring signal, and the IC circuit comprises control circuit, its be suitable for according to the monitoring signal adjustment from the output of the optical fiber receive module that is used to monitor will be transferred into luminescence component electric signal so that the output of luminescence component fix.
14. photo-electric conversion device as claimed in claim 1 is characterized in that optical module is installed on the base substrate by solder ball, and recess is set on the base substrate position of arranging solder ball, in described recess solder ball is installed.
15. photo-electric conversion device as claimed in claim 1 is characterized in that, will be set in the base substrate by the recess of input optics assembly therein.
16. photo-electric conversion device as claimed in claim 6 is characterized in that, is used for transmitting electric power and is set at waveguide to another photo-electric conversion device and from the lead that another photo-electric conversion device receives electric power, and be connected directly to the wiring substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006218776 | 2006-08-10 | ||
| JP218776/2006 | 2006-08-10 | ||
| JP268999/2006 | 2006-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101523264A true CN101523264A (en) | 2009-09-02 |
Family
ID=41082456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800376499A Pending CN101523264A (en) | 2006-08-10 | 2007-08-08 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101523264A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102062911A (en) * | 2011-01-18 | 2011-05-18 | 成都锐华光电技术有限责任公司 | GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof |
| CN112946834A (en) * | 2019-12-10 | 2021-06-11 | 住友电气工业株式会社 | Optical transceiver |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338880A (en) * | 2000-08-10 | 2002-03-06 | 精工爱普生株式会社 | Photoelectric device and electronic apparatus |
| CN1342272A (en) * | 1999-03-04 | 2002-03-27 | 康宁股份有限公司 | Piezoelectric optical switch device |
| CN1363953A (en) * | 2001-01-10 | 2002-08-14 | 世界先进积体电路股份有限公司 | Process for preparing slot isolation not containing nitride |
| US6507384B1 (en) * | 1999-03-26 | 2003-01-14 | Seiko Epson Corporation | Flexible printed wiring board, electro-optical device, and electronic equipment |
| CN1392603A (en) * | 2001-06-18 | 2003-01-22 | 矽统科技股份有限公司 | Method for improving leakage current and cllapse voltage of shallow channel isolation area |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1439901A (en) * | 2002-02-19 | 2003-09-03 | 欧姆龙株式会社 | Optical fiber waveguide, optical component and photoswitch |
| CN1449010A (en) * | 2002-03-29 | 2003-10-15 | 株式会社东芝 | Semiconductor test device, contacting substrate for semiconductor device testing, semiconductor device testing method, semiconductor device and manufacturing method |
| US20040017977A1 (en) * | 2002-03-14 | 2004-01-29 | Dennis Lam | Integrated platform for passive optical alignment of semiconductor device with optical fiber |
| CN1477410A (en) * | 2002-07-02 | 2004-02-25 | ŷķ����ʽ���� | Optical Waveguide device, optical waveguide device mfg. method and optical communication device |
| CN1501765A (en) * | 2002-11-11 | 2004-06-02 | 阿尔卑斯电气株式会社 | Plane mounting circuit module |
| CN1588233A (en) * | 2004-08-14 | 2005-03-02 | 浙江大学 | Method for producing polymer light wave guide device based on silicon lining |
| CN1614624A (en) * | 2003-11-06 | 2005-05-11 | 松下电器产业株式会社 | Touch panel and liquid crystal display apparatus using the same |
-
2007
- 2007-08-08 CN CNA2007800376499A patent/CN101523264A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1342272A (en) * | 1999-03-04 | 2002-03-27 | 康宁股份有限公司 | Piezoelectric optical switch device |
| US6507384B1 (en) * | 1999-03-26 | 2003-01-14 | Seiko Epson Corporation | Flexible printed wiring board, electro-optical device, and electronic equipment |
| CN1338880A (en) * | 2000-08-10 | 2002-03-06 | 精工爱普生株式会社 | Photoelectric device and electronic apparatus |
| CN1363953A (en) * | 2001-01-10 | 2002-08-14 | 世界先进积体电路股份有限公司 | Process for preparing slot isolation not containing nitride |
| CN1392603A (en) * | 2001-06-18 | 2003-01-22 | 矽统科技股份有限公司 | Method for improving leakage current and cllapse voltage of shallow channel isolation area |
| CN1396667A (en) * | 2001-07-16 | 2003-02-12 | 诠兴开发科技股份有限公司 | Package of LED |
| CN1439901A (en) * | 2002-02-19 | 2003-09-03 | 欧姆龙株式会社 | Optical fiber waveguide, optical component and photoswitch |
| US20040017977A1 (en) * | 2002-03-14 | 2004-01-29 | Dennis Lam | Integrated platform for passive optical alignment of semiconductor device with optical fiber |
| CN1449010A (en) * | 2002-03-29 | 2003-10-15 | 株式会社东芝 | Semiconductor test device, contacting substrate for semiconductor device testing, semiconductor device testing method, semiconductor device and manufacturing method |
| CN1477410A (en) * | 2002-07-02 | 2004-02-25 | ŷķ����ʽ���� | Optical Waveguide device, optical waveguide device mfg. method and optical communication device |
| CN1501765A (en) * | 2002-11-11 | 2004-06-02 | 阿尔卑斯电气株式会社 | Plane mounting circuit module |
| CN1614624A (en) * | 2003-11-06 | 2005-05-11 | 松下电器产业株式会社 | Touch panel and liquid crystal display apparatus using the same |
| CN1588233A (en) * | 2004-08-14 | 2005-03-02 | 浙江大学 | Method for producing polymer light wave guide device based on silicon lining |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102062911A (en) * | 2011-01-18 | 2011-05-18 | 成都锐华光电技术有限责任公司 | GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof |
| CN112946834A (en) * | 2019-12-10 | 2021-06-11 | 住友电气工业株式会社 | Optical transceiver |
| CN112946834B (en) * | 2019-12-10 | 2024-03-08 | 住友电气工业株式会社 | Optical transceiver |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4882644B2 (en) | Photoelectric conversion device | |
| US10436991B2 (en) | Optical interconnect modules based on glass substrate with polymer waveguide | |
| EP2428828B1 (en) | Miniaturized high speed optical module | |
| US20050018977A1 (en) | Optoelectronic module with transmitter chip and connecting piece for the module with respect to an optical fiber and with respect to a circuit board, and methods for producing the same | |
| JP5457656B2 (en) | Photoelectric conversion device | |
| JPH08254635A (en) | Optical interconnection device | |
| JP2007271998A (en) | Optical connector and optical module | |
| US20110026919A1 (en) | Half-duplex, single-fiber (s-f) optical transceiver module and method | |
| JPWO2008139763A1 (en) | Optical communication module, method for manufacturing the same, and optical transmitter / receiver | |
| KR20070085080A (en) | System and method for the fabrication of an electro-optical module | |
| US20050025435A1 (en) | Optical module and manufacturing method of the same, optical-communication apparatus, and electronic apparatus | |
| CN103579376A (en) | Opto-electronic system having flip-chip substrate mounting | |
| US6786651B2 (en) | Optical interconnect structure, system and transceiver including the structure, and method of forming the same | |
| US20140068924A1 (en) | Method for Manufacturing Optoelectronic Module | |
| JP2008010837A (en) | Optical communication module, its manufacturing method, and optical transmission/reception device | |
| CN101248380A (en) | Optical cable and transmitting/receiving sub-assembly | |
| US7061025B2 (en) | Optoelectronic device packaging assemblies and methods of making the same | |
| CN101523264A (en) | Photoelectric converter | |
| JP4876830B2 (en) | Photoelectric conversion device | |
| JP2006003818A (en) | Semiconductor integrated circuit chip and its manufacturing method | |
| TW201323963A (en) | Optical element package and method for making the same | |
| US20150286018A1 (en) | Cost-effective optical coupling module | |
| CN115113349A (en) | Photonic system and method of manufacturing the same | |
| JP4779919B2 (en) | Photoelectric conversion device | |
| JP4779918B2 (en) | Photoelectric conversion device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Japan's Osaka kamato city characters really 1006 times Applicant after: Matsushita Electric Industrial Co., Ltd. Address before: Japan Osaka Applicant before: Matsushita Electric Works, Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: MATSUSHITA ELECTRIC WORKS LTD. TO: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090902 |