CN102062911A - GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof - Google Patents
GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof Download PDFInfo
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- CN102062911A CN102062911A CN 201110009656 CN201110009656A CN102062911A CN 102062911 A CN102062911 A CN 102062911A CN 201110009656 CN201110009656 CN 201110009656 CN 201110009656 A CN201110009656 A CN 201110009656A CN 102062911 A CN102062911 A CN 102062911A
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Abstract
The invention discloses a GPON (Gigabit-Capable PON) module basic unit and a manufacturing method thereof, belonging to the technical field of microelectronic devices, and in particular relates to a method for manufacturing a GPON module basic unit based on a semiconductor wafer packaging technique. The method comprises the following step of forming the GPON module basic unit by utilizing a packaging technique and mature microelectronic processing techniques such as semiconductor dry-method and wet-method etching, electroplating, bonding, transferring and the like. Compared with a module formed by combining discrete devices, the GPON module basic unit manufactured with the method has low manufacturing cost, can be produced in a large scale, can be applied to optical networks instead of the traditional GPON module, and has a processing technique compatible with the traditional microelectronic technique.
Description
Technical field
The present invention relates to technical field of microelectronic devices, relate in particular to
OnePlant GPON (Gigabit-Capable PON) module base unit and its manufacture method.
Background technology
The GPON technique functions comes from nineteen ninety-five, and PON is the abbreviation of English " EPON ", and GPON (Gigabit-Capable PON) is proposed by the FSAN of FSAN forum (Full Service Access Networks) tissue the earliest.Calendar year 2001, FSAN has started a standard operation, is intended to the PON network that modular working speed is higher than 1Gb/s: be called Gigabit-Capable PON (GPON).GPON also will support multiple business with very high efficient except supporting higher speed, rich functions and good extendability are provided.The OMCI administrative mechanism that the GPON technical support is perfect, but Remote configuration, sending down service, upgrading etc. effectively improve the deployment efficient of operator.
The comprehensive networking cost of GPON is better than EPON(EPON: ethernet passive optical network), 2010, the competition power that the integration of three networks and operator's full-service operation bring becomes Chinese optical fiber and inserts FTTX(Fiber-to-the-x) the new driving force of development, the new application of CHINA RFTCOM Co Ltd bidirectional rebuilding, Internet of Things, cloud computing etc. simultaneously all will be brought the more wide application prospect of GPON network.The attention of operator and the development trend of FTTX have played positive facilitation to GPON development.
Yet the used core devices cost of GPON system is still higher in the prior art, has limited application and the development of GPON.The used bidirectional component BOSA(Bi-directional of GPON module Optical Sub-Assembly) combined by discrete component, assembling is complicated, production efficiency is lower, and cost is high.Based on the powerful demand in aspect, market, and integrated more active, passive block, based on PLC(Planar light Circuit) the GPON module of technology is good by numerous companies.The technology that its advantage is to allow different classes of device to select only separately material and the best respectively is so that obtain the advantage of top performance.But the mixing integrated technology of silicon substrate is quite complicated in actual fabrication technology and encapsulation always, and in recent years, some research institutions have done improvement at traditional upside-down mounting for the hybrid integration technology on basis, have obtained bigger progress.Wherein, the most noticeable achievement has two: first is University of California--Santa Barbara and the mixing integrated device that combines based on chip-scale of Intel company joint study; Second is the mixing integrated device based on chip and wafer combination of Ghent, Belgium university.These two technology are respectively based on the encapsulation technology of wafer scale, the encapsulation technology of wafer scale is different from traditional first cutting crystal wafer, the way of assembling test again, but on the full wafer wafer, carry out earlier packaging and testing, and then cutting, it has more obvious advantage: at first be that technique process is optimized greatly, wafer directly enters packaging process, and traditional handicraft also will be cut, classify wafer before encapsulation; All integrated circuit once encapsulate, and mint-mark work is directly carried out on wafer, and testing of equipment is once finished, and are different from traditional packaging technology; Production cycle and cost decline to a great extent, and the required number of pins of chip is reduced, and have improved integrated level.
GPON module base unit of the prior art adopts discrete device, and discrete device is subjected to the constraint of labyrinth in assembling, aligning, encapsulation etc.
Summary of the invention
Be subjected to the constraint of labyrinth at the discrete device that exists in the prior art in assembling, aligning, encapsulation etc., so be necessary to provide a kind of GPON module base unit and its manufacture method.
The invention discloses a kind of GPON elementary cell, comprise silica-based optical platform 101, optical waveguide 102,1310nm band laser 103, catoptron 202,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, be used for fixing V-type groove 107 of optical fiber and the metal pad 106 that is used to be electrically connected; Above-mentioned 1310nm band laser 103, catoptron 202 are embedded in the silica-based optical platform 101, and above-mentioned 1310nm band laser 103, catoptron 202,1490nm band detector 104 are coupled with optical waveguide 102 respectively; Above-mentioned optical waveguide 102,1310nm band laser 103, catoptron 202,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, V-type groove 107 and metal pad 106 couple with silica-based optical platform 101 respectively.
Preferably, the light-emitting area of the end face geometric center of above-mentioned optical waveguide 102 and 1310nm band laser 103 is aimed at.
Above-mentioned back light detector 105 is by coupling grating 201 and optical waveguide 102 couplings.
Preferably, the material of above-mentioned optical waveguide 102 is silicon dioxide, silicon nitride, silicon or transparent organic material.
The invention also discloses a kind of manufacture method of GPON elementary cell, it comprises following steps:
Step 1 is imbedded silica-based optical platform 101 with 1310nm band laser 103 and catoptron 202;
Step 2 in silica-based optical platform 101 photoetching or etching, forms optical waveguide 102, back light detector coupling grating 201 and wave splitting/composing device 108; Above-mentioned 1310nm band laser 103 and optical waveguide 102 couplings, the end face geometric center of optical waveguide 102 and 1310nm band laser 103 light-emitting areas are aimed at;
Step 3 by evaporation, sputter and plating, forms metal pad 106 and metal line on silica-based optical platform 101;
Step 4, etching is used for optical fiber align and fixing V-type groove 107 on silica-based optical platform 101; Step 5, Surface Mount back light detector 105 on silica-based optical platform 101, and 1490nm band detector 104 is set, above-mentioned 1490nm band detector 104 couples with silica-based optical platform 101.
Preferably, 1310nm band laser 103 and catoptron 202 imbedded silica-based optical platform 101 specifically also comprise in the above-mentioned steps one:
Step 1 pre-fixes at least one 1310nm band laser 103 and at least one catoptron 202 on daughter board, and the upper surface that has pad on the 1310nm band laser 103 contacts with daughter board, and the reflecting slant upper surface that has of catoptron 202 contacts with daughter board;
Step 2, on silica-based optical platform 101, form length all greater than the pit 301 of 1310nm band laser 103 physical dimensions and length all greater than the pit 302 of catoptron 202 physical dimensions, the distribution on silica-based optical platform 101 of above-mentioned pit 301 and pit 302 with 1310nm band laser 103 and catoptron 202 distribution on daughter board corresponding one by one, the inwall bottom surface of pit 301 and pit 302 applies the fixed bed 303 that one deck is used for fixing; With the daughter board after pre-fixing be etched with the silica-based optical platform 101 that pit and this pit inwall coated on bottom side be covered with fixed bed 303 and aim at the back pressings face-to-face;
Step 3, desorption daughter board, 1310nm band laser 103 and catoptron 202 are transferred in the corresponding pit 301 and pit 302.
Preferably, the manufacture method of above-mentioned GPON modular unit is based on wafer.
Preferably, the above-mentioned 1310nm of stating band laser 103 and above-mentioned catoptron 202 are spaced.
Beneficial effect of the present invention is: compared several advantages with the discrete device assembly that existing GPON module is commonly used.At first, the present invention has broken away from the constraint of labyrinths such as the assembling, aligning, encapsulation of traditional discrete device, stands in the angle of encapsulation, and device is integrated.The second, directly utilize the wafer-level packaging technology to form the GPON module base unit, making the GPON module base unit is that base material completes with silicon, technical maturity, can be mass-produced, price is relatively cheap.The 3rd, theoretical analysis, the present invention is applicable to the GPON module making under the various speed standards, also is applicable to three devices of single fiber bi-directional device and single fiber, obtains important application in the FTTX field.
Description of drawings
Fig. 1 is GPON basic cell structure figure.
The GPON elementary cell that comprise coupling grating and catoptron of Fig. 2 shown in being.
Fig. 3 is for imbedding 1310nm band laser 103 and catoptron 202 in the structural drawing behind the silica-based optical platform 101.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, the invention discloses a kind of GPON elementary cell, comprise silica-based optical platform 101, optical waveguide 102, be embedded in 1310nm band laser 103 in the silica-based optical platform 101, be embedded in catoptron 202,1490nm band detector 104, back light detector 105, wave splitting/composing device 108 in the silica-based optical platform 101, be used for fixing V-type groove 107 of optical fiber and the metal pad 106 that is used to be electrically connected; Described 1310nm band laser 103, catoptron 202,1490nm band detector 104 are coupled with optical waveguide 102 respectively; Described optical waveguide 102,1310nm band laser 103, catoptron 202,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, V-type groove 107 and metal pad 106 couple with silica-based optical platform 101 respectively.Described back light detector 105 is used to detect the luminous power that of 1310nm band laser 103.
Preferably, the light-emitting area of the end face geometric center of described optical waveguide 102 and 1310nm band laser 103 is aimed at.The height and position of optical waveguide 102 (Z direction) is by the degree of depth of 1310nm band laser 103 light-emitting areas in pit.
Preferably, described back light detector 105 is by coupling grating 201 and optical waveguide 102 couplings.
For making accompanying drawing distinct, do not influencing under the prerequisite of the present invention, metal line and the catoptron 202 of this single silica-based GPON modular unit on silica-based optical platform 101 do not draw.Silica-based optical platform 101 is substrates of single GPON module base unit.Preferably, the material of described optical waveguide 102 is silicon dioxide, silicon nitride, silicon or transparent organic material.
The GPON elementary cell that comprises coupling grating and catoptron as shown in Figure 2 the invention also discloses a kind of manufacture method of GPON elementary cell, and it comprises following steps:
Step 1 is imbedded silica-based optical platform 101 with 1310nm band laser 103 and catoptron 202.
Step 2 by microelectronic techniques such as photoetching or etchings, forms optical waveguide 102, back light detector coupling grating 201 and wave splitting/composing device 108 on silica-based optical platform 101.1310nm band laser 103 and optical waveguide 102 couplings, the end face geometric center of optical waveguide 102 and 1310nm band laser 103 light-emitting areas are aimed at, and duct height position (Z direction) depends on the position (degree of depth) of laser instrument light-emitting area in pit.
Step 3 by microelectronic techniques such as evaporation, sputter and plating, forms metal pad 106 and metal line on silica-based optical platform 101, described metal pad 106 and metal line are used for being electrically connected on the GPON modular unit.For making accompanying drawing distinct, do not influencing under the prerequisite of the present invention, the metal line among Fig. 2 does not draw.
Step 4, etching is used for optical fiber align and fixing V-type groove 107 on silica-based optical platform 101.
Step 5, Surface Mount back light detector 105 on silica-based optical platform 101, and 1490nm band detector 104 is set, described 1490nm band detector 104 couples with silica-based optical platform 101.
Preferably, as shown in Figure 3 1310nm band laser 103 and catoptron 202 are imbedded structural drawing behind the silica-based optical platform 101,1310nm band laser 103 and catoptron 202 are imbedded silica-based optical platform 101 specifically also comprise in the described step 1:
Step 1, on daughter board, at least one 1310nm band laser 103 and at least one catoptron 202 are pre-fixed according to certain spacing, the upper surface that has pad on the 1310nm band laser 103 contacts with daughter board, the reflecting slant upper surface that has of catoptron 202 contacts with daughter board, the spacing of 1310nm band laser 103 should be decided according to two adjacent GPON modular unit sizes, has both satisfied the silicon area that utilizes motherboard that the size of individual module also will be tried one's best.Described daughter board can be silicon wafer, glass sheet or potsherd etc., but is not limited thereto; The surface of contact of daughter board and 1310nm band laser 103 is smooth, even.
Step 2, utilize dry method or wet etching, on silica-based optical platform 101, form length all greater than the pit 301 of 1310nm band laser 103 physical dimensions and length all greater than the pit 302 of catoptron 202 physical dimensions, the distribution on silica-based optical platform 101 of described pit 301 and pit 302 with 1310nm band laser 103 and catoptron 202 distribution on daughter board corresponding one by one, the inwall bottom surface of pit 301 and pit 302 applies one deck and is used for the fixing fixed bed 303 of 1310nm band laser 103 and catoptron 202; Aim at the back pressings face-to-face with pre-fixing the daughter board of 1310nm band laser 103 and catoptron 202 and being etched with the silica-based optical platform 101 that pit and this pit inwall coated on bottom side be covered with fixed bed 303.By fixed bed 303 1310nm band laser 103 is fixed in the pit corresponding on the silica-based optical platform 101.
Step 3, desorption daughter board, 1310nm band laser 103 and catoptron 202 are transferred in the corresponding pit 301 and pit 302.
Preferably, the manufacture method of described GPON modular unit is based on wafer.
Preferably, described 1310nm band laser 103 and described catoptron 202 are spaced on daughter board.Use catoptron to change optical transmission direction and finish the light path coupling, higher than the grating coupling efficiency.Use discrete catoptron, reduce the difficulty of silica-based integrated reflector processing technology.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a GPON elementary cell is characterized in that comprising silica-based optical platform (101), optical waveguide (102), 1310nm band laser (103), catoptron (202), 1490nm band detector (104), back light detector (105), wave splitting/composing device (108), is used for fixing V-type groove (107) of optical fiber and the metal pad (106) that is used to be electrically connected; Described 1310nm band laser (103), catoptron (202) are embedded in the silica-based optical platform (101), and described 1310nm band laser (103), catoptron (202), 1490nm band detector (104) are coupled with optical waveguide (102) respectively; Described optical waveguide (102), 1310nm band laser (103), catoptron (202), 1490nm band detector (104), back light detector (105), wave splitting/composing device (108), V-type groove 107 and metal pad 106 couple with silica-based optical platform (101) respectively.
2. GPON elementary cell as claimed in claim 1 is characterized in that the end face geometric center of described optical waveguide (102) and the light-emitting area aligning of 1310nm band laser (103).
3. GPON elementary cell as claimed in claim 2 is characterized in that described back light detector (105) is by coupling grating (201) and optical waveguide (102) coupling.
4. GPON elementary cell as claimed in claim 3, the material that it is characterized in that described optical waveguide (102) is silicon dioxide, silicon nitride, silicon or transparent organic material.
5. the manufacture method of GPON elementary cell as claimed in claim 1, it comprises following steps:
Step 1 is imbedded silica-based optical platform (101) with 1310nm band laser (103) and catoptron (202);
Step 2 in (101) photoetching of silica-based optical platform or etching, forms optical waveguide (102), back light detector coupling grating (201) and wave splitting/composing device (108); Described 1310nm band laser (103) and optical waveguide (102) coupling, the end face geometric center of optical waveguide (102) and 1310nm band laser (103) light-emitting area are aimed at;
Step 3 goes up by evaporation, sputter and plating at silica-based optical platform (101), forms metal pad (106) and metal line;
Step 4 goes up etching at silica-based optical platform (101) and is used for optical fiber align and fixing V-type groove (107); Step 5 goes up Surface Mount back light detector (105) at silica-based optical platform (101), and 1490nm band detector (104) is set, and described 1490nm band detector (104) couples with silica-based optical platform (101).
6. the manufacture method of GPON elementary cell as claimed in claim 5 is characterized in that 1310nm band laser (103) and catoptron (202) are imbedded silica-based optical platform (101) specifically also comprise in the described step 1:
Step 1, on daughter board, at least one 1310nm band laser (103) and at least one catoptron (202) are pre-fixed, the upper surface that has pad on the 1310nm band laser (103) contacts with daughter board, and the reflecting slant upper surface that has of catoptron (202) contacts with daughter board;
Step 2, silica-based optical platform (101) go up to form length all greater than the pit (301) of 1310nm band laser (103) physical dimension and length all greater than the pit (302) of catoptron (202) physical dimension, described pit (301) and the distribution of pit (302) on silica-based optical platform (101) are corresponding one by one with 1310nm band laser (103) and the distribution of catoptron (202) on daughter board, and the inwall bottom surface of pit (301) and pit (302) applies the fixed bed (303) that one deck is used for fixing; With the daughter board after pre-fixing be etched with the silica-based optical platform (101) that pit and this pit inwall coated on bottom side be covered with fixed bed 303 and aim at the back pressing face-to-face;
Step 3, desorption daughter board, 1310nm band laser (103) and catoptron (202) are transferred in the corresponding pit (301) and pit (302).
7. the manufacture method of GPON elementary cell as claimed in claim 6, the manufacture method that it is characterized in that described GPON modular unit are based on wafer.
8. the manufacture method of GPON elementary cell as claimed in claim 7 is characterized in that the described 1310nm of stating band laser (103) and described catoptron (202) are spaced.
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| CN106405754A (en) * | 2016-11-25 | 2017-02-15 | 华进半导体封装先导技术研发中心有限公司 | Structure support for fiber module and manufacturing method thereof |
| JP7154457B1 (en) * | 2021-08-20 | 2022-10-17 | 三菱電機株式会社 | Ultrasound imaging device and imaging system |
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| CN101153939A (en) * | 2006-09-28 | 2008-04-02 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101464540A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101523264A (en) * | 2006-08-10 | 2009-09-02 | 松下电工株式会社 | Photoelectric converter |
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| CN1751255A (en) * | 2003-02-25 | 2006-03-22 | 康宁股份有限公司 | Passive alignment of optical fibers with optical elements |
| US20050259910A1 (en) * | 2004-05-19 | 2005-11-24 | Ruolin Li | Integrating optical components on a planar light circuit |
| CN101523264A (en) * | 2006-08-10 | 2009-09-02 | 松下电工株式会社 | Photoelectric converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106405754A (en) * | 2016-11-25 | 2017-02-15 | 华进半导体封装先导技术研发中心有限公司 | Structure support for fiber module and manufacturing method thereof |
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Application publication date: 20110518 |