CN102062910B - GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof - Google Patents
GPON (Gigabit-Capable PON) module basic unit and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a GPON (Gigabit-Capable PON) module basic unit and a manufacturing method thereof, belonging to the technical field of microelectronic devices, and in particular relates to a method for manufacturing a GPON module basic unit based on a semiconductor wafer packaging technique. The method comprises the following step of forming the GPON module basic unit by utilizing a packaging technique and mature microelectronic processing techniques such as semiconductor dry-method and wet-method etching, electroplating, bonding, transferring and the like. Compared with a module formed by combining discrete devices, the GPON module basic unit manufactured with the method has low manufacturing cost, can be produced in a large scale, can be applied to optical networks instead of the traditional GPON module, and has a processing technique compatible with the traditional microelectronic technique.
Description
Technical field
The present invention relates to technical field of microelectronic devices, relate in particular to
OnePlant GPON (Gigabit-Capable PON) module base unit and its manufacture method.
Background technology
The GPON technique functions comes from nineteen ninety-five, and PON is the abbreviation of English " EPON ", and GPON (Gigabit-Capable PON) is proposed by the FSAN FSAN of forum (Full Service Access Networks) tissue the earliest.Calendar year 2001, FSAN has started a standard operation, is intended to modular working speed higher than the PON network of 1Gb/s: be called Gigabit-Capable PON (GPON).GPON also will support multiple business with very high efficient except supporting higher speed, abundant function and good extendability are provided.The OMCI administrative mechanism that the GPON technical support is perfect, but Remote configuration, sending down service, upgrading etc. effectively improve the deployment efficient of operator.
The comprehensive networking cost of GPON is better than EPON(EPON: ethernet passive optical network), 2010, the competition power that the integration of three networks and operator's full-service operation bring becomes Chinese optical fiber access FTTX(Fiber-to-the-x) the new driving force of development, the new application of CHINA RFTCOM Co Ltd bidirectional rebuilding, Internet of Things, cloud computing etc. simultaneously all will be brought the more wide application prospect of GPON network.The attention of operator and the development trend of FTTX have played positive facilitation to GPON development.
Yet in prior art, GPON system core devices cost used is still higher, has limited the application and development of GPON.GPON module bidirectional component BOSA(Bi-directional used Optical Sub-Assembly) combined by discrete component, assembling is complicated, production efficiency is lower, and cost is high.Based on the powerful demand in aspect, market, and integrated more active, passive block, based on PLC(Planar light Circuit) the GPON module of technology had an optimistic view of by numerous companies.Its advantage is to allow different classes of device to select respectively most suitable material separately and best technique in order to obtain the advantage of top performance.But the mixing integrated technology of silicon substrate is very complex in actual fabrication technique and encapsulation always, and in recent years, some research institutions have done improvement for traditional upside-down mounting for the hybrid integration technology on basis, have obtained greater advance.Wherein, the most noticeable achievement has two: first is University of California--Santa Barbara and the mixing integrated device of being combined based on chip-scale of Intel company joint study; Second is the mixing integrated device based on chip and wafer combination of Ghent, Belgium university.These two technology are respectively based on the encapsulation technology of wafer scale, the encapsulation technology of wafer scale is different from traditional first cutting crystal wafer, the way of assembling test again, but first carry out packaging and testing on the full wafer wafer, and then cutting, it has more obvious advantage: be at first that technique process is optimized greatly, wafer directly enters packaging process, and traditional handicraft also will be cut wafer, classify before encapsulation; All integrated circuit once encapsulate, and mint-mark work is directly carried out on wafer, and testing of equipment is once completed, and are different from traditional packaging technology; Production cycle and cost decline to a great extent, and the required number of pins of chip is reduced, and have improved integrated level.
GPON module base unit of the prior art adopts discrete device, and discrete device is subject to the constraint of labyrinth in assembling, aligning, encapsulation etc.
Summary of the invention
Be subject to the constraint of labyrinth for the discrete device that exists in prior art in assembling, aligning, encapsulation etc., therefore be necessary to provide a kind of GPON module base unit and its manufacture method.
The invention discloses a kind of GPON elementary cell, comprise silica-based optical platform 101, optical waveguide 102,1310nm band laser 103,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, be used for the fixing V-type groove 107 of optical fiber and be used for the metal pad 106 of electrical connection; Above-mentioned 1310nm band laser 103 is imbedded in silica-based optical platform 101; Above-mentioned 1310nm band laser 103,1490nm band detector 104 are coupled with optical waveguide 102 respectively; Above-mentioned optical waveguide 102,1310nm band laser 103,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, V-type groove 107 and metal pad 106 all couple with silica-based optical platform 101 respectively.
Preferably, above-mentioned back light detector 105 is by coupling grating 201 and optical waveguide 102 couplings.
Preferably, above-mentioned 1490nm band detector 104 is by coupling grating 202 and optical waveguide 102 couplings.
Preferably, the material of above-mentioned optical waveguide 102 is silicon dioxide, silicon nitride, silicon or transparent organic material.
The invention also discloses a kind of manufacture method of GPON elementary cell, it comprises following steps:
Step 1 is imbedded silica-based optical platform 101 with 1310nm band laser 103;
Step 2 forms optical waveguide 102, back light detector coupling grating 201,1490nm band detector coupling grating 202 and wave splitting/composing device 108 on silica-based optical platform 101;
Step 3 forms metal pad 106 and metal line on silica-based optical platform 101;
Step 4, etching is used for optical fiber align and fixing V-type groove 107 on silica-based optical platform 101;
Step 5, Surface Mount back light detector 105 on silica-based optical platform 101, and 1490nm band detector 104 is set.
Preferably, above-mentioned steps one specifically also comprises:
Step 1 pre-fixes at least one 1310nm band laser 103 on daughter board, and the upper surface with pad on 1310nm band laser 103 contacts with daughter board;
Step 2, form length all greater than the pit of 1310nm band laser 103 physical dimensions on silica-based optical platform 101, the distribution of above-mentioned pit on silica-based optical platform 101 is corresponding one by one with the distribution of 1310nm band laser 103 on daughter board, and inwall bottom surface coating one deck of pit is used for the fixing fixed bed 301 of 1310nm band laser 103; With pre-fix the daughter board of 1310nm band laser 103 and be etched with silica-based optical platform 101 that pit and this pit inwall coated on bottom side be covered with fixed bed 301 aim at face-to-face after pressing.
Step 3, desorption daughter board, 1310nm band laser 103 are transferred in corresponding pit.
Preferably, the manufacture method of above-mentioned GPON modular unit is based on wafer.
Beneficial effect of the present invention is: compared several advantages with the discrete device assembly that existing GPON module is commonly used.At first, the present invention has broken away from the constraint of the labyrinths such as the assembling, aligning, encapsulation of traditional discrete device, stands in the angle of encapsulation, and device is integrated.The second, directly utilize Wafer level packaging to form the GPON module base unit, the GPON module base unit is completed take silicon as base material, technical maturity, can be mass-produced, price is relatively cheap.The 3rd, theoretical analysis, the present invention is applicable to the GPON module making under various speed standards, also is applicable to three devices of single-fiber bidirectional device and single fiber, obtains important application in the FTTX field.
Description of drawings
Fig. 1 is a kind of structural drawing of GPON elementary cell.
Fig. 2 is the GPON basic cell structure figure that comprises coupling grating.
Fig. 3 is for imbedding the 1310nm band laser in the structural drawing after silica-based optical platform.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, the invention discloses a kind of GPON elementary cell, comprise silica-based optical platform 101, optical waveguide 102, be embedded in 1310nm band laser 103 in silica-based optical platform 101,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, be used for the fixing V-type groove 107 of optical fiber and be used for the metal pad 106 of electrical connection; Described 1310nm band laser 103,1490nm band detector 104 are coupled with optical waveguide 102 respectively; Described optical waveguide 102,1310nm band laser 103,1490nm band detector 104, back light detector 105, wave splitting/composing device 108, V-type groove 107 and metal pad 106 all couple with silica-based optical platform 101 respectively.Described back light detector 105 is for detection of the luminous power that goes out of 1310nm band laser 103.
Preferably, the light-emitting area of the end face geometric center of described optical waveguide 102 and 1310nm band laser 103 is aimed at.The height and position of optical waveguide 102 (Z direction) is by the degree of depth of 1310nm band laser 103 light-emitting areas in pit.
Preferably, described back light detector 105 is by coupling grating 201 and optical waveguide 102 couplings.
Preferably, described 1490nm band detector 104 is by coupling grating 202 and optical waveguide 102 couplings.
For making accompanying drawing distinct, do not affecting under prerequisite of the present invention, the metal line of this single silica-based GPON modular unit on silica-based optical platform 101 do not draw.Silica-based optical platform 101 is substrates of single GPON module base unit.Preferably, the material of described optical waveguide 102 is silicon dioxide, silicon nitride, silicon or transparent organic material.
The GPON elementary cell that comprises coupling grating as shown in Figure 2 the invention also discloses a kind of manufacture method of GPON elementary cell, and it comprises following steps:
Step 1 is imbedded silica-based optical platform 101 with 1310nm band laser 103;
Step 2 by microelectronic techniques such as photoetching or etchings, forms optical waveguide 102, back light detector coupling grating 201,1490nm band detector coupling grating 202 and wave splitting/composing device 108 on silica-based optical platform 101.102 of 1310nm band laser 103 and optical waveguides are coupled by end face, optical waveguide 102 end face geometric centers and 1310nm band laser 103 light-emitting areas are aimed at, and the position (degree of depth) of laser instrument light-emitting area in pit depended in duct height position (Z direction).
Step 3 by microelectronic techniques such as evaporation, sputter and plating, forms metal pad 106 and metal line on silica-based optical platform 101, described metal pad 106 and metal line are used for the electrical connection on the GPON modular unit.For making accompanying drawing distinct, do not affecting under prerequisite of the present invention, the metal line in Fig. 2 does not draw.
Step 4, etching is used for optical fiber align and fixing V-type groove 107 on silica-based optical platform 101.
Step 5, Surface Mount back light detector 105 on silica-based optical platform 101, and 1490nm band detector 104 is set, described 1490nm band detector 104 with couple at silica-based optical platform 101.
Preferably, as shown in Figure 3 1310nm band laser 103 is imbedded structural drawing after silica-based optical platform 101, the silica-based optical platform 101 that 1310nm band laser 103 is imbedded in described step 1 specifically also comprises:
Step 1, on daughter board, at least one 1310nm band laser 103 is pre-fixed according to certain spacing, upper surface with pad on 1310nm band laser 103 contacts with daughter board, the spacing of 1310nm band laser 103 should be decided according to two adjacent GPON modular unit sizes, has both satisfied the silicon area that utilizes motherboard that the size of individual module also will be tried one's best.Described daughter board can be silicon wafer, glass sheet or potsherd etc., but is not limited to this; The surface of contact of daughter board and 1310nm band laser 103 is smooth, even.
Step 2, utilize dry method or wet etching, form length all greater than the pit of 1310nm band laser 103 physical dimensions on silica-based optical platform 101, the distribution of described pit on silica-based optical platform 101 is corresponding one by one with the distribution of 1310nm band laser 103 on daughter board, and inwall bottom surface coating one deck of pit is used for the fixing fixed bed 301 of 1310nm band laser 103; With pre-fix the daughter board of 1310nm band laser 103 and be etched with silica-based optical platform 101 that pit and this pit inwall coated on bottom side be covered with fixed bed 301 aim at face-to-face after pressing.By fixed bed 301,1310nm band laser 103 is fixed in pit corresponding on silica-based optical platform 101.
Step 3, after the desorption daughter board, 1310nm band laser 103 is transferred in corresponding pit.
Preferably, the manufacture method of described GPON modular unit is based on wafer.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. the manufacture method of a GPON elementary cell, it comprises following steps:
Step 1 is imbedded silica-based optical platform (101) with 1310nm band laser (103);
Step 2 is at upper optical waveguide (102), back light detector coupling grating (201), 1490nm band detector coupling grating (202) and the wave splitting/composing device (108) of forming of silica-based optical platform (101);
Step 3 is at upper metal pad (106) and the metal line of forming of silica-based optical platform (101);
Step 4 is used for optical fiber align and fixing V-type groove (107) in the upper etching of silica-based optical platform (101);
Step 5 in the upper Surface Mount back light detector (105) of silica-based optical platform (101), and arranges 1490nm band detector (104);
Described step 1 specifically also comprises:
Step 1 pre-fixes at least one 1310nm band laser (103) on daughter board, and the upper upper surface with pad of 1310nm band laser (103) contacts with daughter board;
Step 2, at the upper length that forms of silica-based optical platform (101) all greater than the pit of 1310nm band laser (103) physical dimension, the distribution of described pit on silica-based optical platform (101) is corresponding one by one with the distribution of 1310nm band laser (103) on daughter board, and inwall bottom surface coating one deck of pit is used for the fixing fixed bed (301) of 1310nm band laser (103); To pre-fix the daughter board of 1310nm band laser (103) and be etched with silica-based optical platform (101) that pit and this pit inwall coated on bottom side be covered with fixed bed (301) aim at face-to-face after pressing;
Step 3, desorption daughter board, 1310nm band laser (103) are transferred in corresponding pit;
Described GPON elementary cell comprises silica-based optical platform (101), optical waveguide (102), 1310nm band laser (103), 1490nm band detector (104), back light detector (105), wave splitting/composing device (108), is used for the fixing V-type groove (107) of optical fiber and is used for the metal pad (106) of electrical connection; Described 1310nm band laser (103) is imbedded in silica-based optical platform (101); Described 1310nm band laser (103), 1490nm band detector (104) are coupled with optical waveguide (102) respectively; Described optical waveguide (102), 1310nm band laser (103), 1490nm band detector (104), back light detector (105), wave splitting/composing device (108), V-type groove (107) and metal pad (106) couple with silica-based optical platform (101) respectively;
Described back light detector (105) is by back light detector coupling grating (201) and optical waveguide (102) coupling;
Described 1490nm band detector (104) is by 1490nm band detector coupling grating (202) and optical waveguide (102) coupling.
2. the manufacture method of GPON elementary cell as claimed in claim 1, the material of described optical waveguide (102) is silicon dioxide, silicon nitride, silicon or transparent organic material.
3. the manufacture method of GPON elementary cell as claimed in claim 1, the manufacture method of described GPON elementary cell is based on wafer.
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| CN106405754B (en) * | 2016-11-25 | 2018-01-16 | 华进半导体封装先导技术研发中心有限公司 | A kind of structure stand of optical fiber module and preparation method thereof |
| CN108508546A (en) * | 2018-03-13 | 2018-09-07 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module |
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| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid integrated tunable semiconductor laser |
| CN101153939A (en) * | 2006-09-28 | 2008-04-02 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101464540A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20080031625A1 (en) * | 2006-07-28 | 2008-02-07 | Ryousuke Okuda | WDM hybrid splitter module |
| KR100825728B1 (en) * | 2006-09-12 | 2008-04-29 | 한국전자통신연구원 | Hybrid optical transceiver module and passive optical network(pon) comprising the same module |
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| CN1658453A (en) * | 2004-02-18 | 2005-08-24 | 中国科学院半导体研究所 | Hybrid integrated tunable semiconductor laser |
| CN101153939A (en) * | 2006-09-28 | 2008-04-02 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101464540A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
Non-Patent Citations (2)
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| Gee-Kung Chang,et al.High-density,end-to-end optoelectronic integration and packaging for digital-optical interconnect systems.《Proc.of SPIE》.2005,第5814卷第176-190页. * |
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Effective date of registration: 20210219 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: No.9, East 3rd Wuke Road, Wuhou District, Chengdu, Sichuan 610000 Patentee before: CHENGDU RUIHUA OPTICS Co.,Ltd. |
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